CN102104001B - 提高沟槽型功率mos器件的击穿电压的方法 - Google Patents
提高沟槽型功率mos器件的击穿电压的方法 Download PDFInfo
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CN102789990B (zh) * | 2012-08-17 | 2015-10-28 | 西安龙腾新能源科技发展有限公司 | 一种浅槽源电极结构超结器件的制作工艺 |
CN103855018B (zh) * | 2012-12-04 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | 沟槽底部进行离子注入调节bv和改善导通电阻的方法 |
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CN101593773A (zh) * | 2008-05-28 | 2009-12-02 | 力芯科技股份有限公司 | 沟槽型功率mos晶体管及利用其的集成电路 |
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CN101593773A (zh) * | 2008-05-28 | 2009-12-02 | 力芯科技股份有限公司 | 沟槽型功率mos晶体管及利用其的集成电路 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |