CN102097558B - 形成具有排热结构的垂直结构发光二极管的方法 - Google Patents
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Abstract
本发明揭露一种形成具有排热结构的垂直结构发光二极管(LED)的方法,包括以下步骤:a)提供蓝宝石基板;b)在蓝宝石基板上沉积多个凸部,其高度为p;c)形成具有多个凹部的缓冲层,凹部的深度q小于p,以致当凸部容纳于缓冲层的凹部时,在其间形成多个间隙;d)在缓冲层上生长多个发光层,具有形成于发光层和缓冲层间的介质层;e)蚀刻穿透发光层和缓冲层来形成排热用的通道;f)通过准分子激光剥离(LLO)来移除蓝宝石基板和凸部;g)粗化介质层;以及h)在粗化的介质层上沉积电极。
Description
技术领域
本发明是有关形成垂直结构发光二极管(LED)的方法,尤指一种形成具有通道和多个间隙的垂直结构发光二极管,以利排热,同时可改善激光剥离(laser lift-off,LLO)制程的良率并提升LED产能。
背景技术
近几年来,散热管理仍是高电流驱动下的封装高功率LED发展的主要课题。由于外延于蓝宝石基板上的横向电流导通结构,导致电流推挤效应、高串联电阻(series resistance)和散热不佳的缺点。
此外,利用短波长准分子源的激光剥离(LLO)制程的散热基板,可解决蓝宝石散热不佳的缺点。举例来说,美国第7,384,807号专利揭示一种制造垂直结构光电装置的方法,包含在晶体基板上制造复数个垂直结构光电装置,接着使用LLO制程来移除基板。然而,LED的电性和光学特性取决于外延层的晶体质量,其质量受到额外的化学制程(例如蚀刻)、机械制程(如研磨)、以及LLO制程的影响。激光束可能需要扫描外延晶圆一次以上,因而降低其产出,破坏LED外延层的机会亦大增。LLO的设备价值亦不斐。
为达成LLO制程的高良率,必须利用化学或物理蚀刻制程来分离epi-GaN的岛(island),以形成排热结构,即所谓的“道径”(street path)。道径利于LLO制程期间氮气释放,因而提高良率。
然而,由于epi-GaN岛的尺寸增加,必须放宽道径的宽度,以防止相邻的岛遭到因光引发分解而释放的氮气的压力破坏。
在LED的制作上,蓝宝石(Al2O3)为目前氮化铝铟镓基(AlInGaN-based)材料外延生长最常使用的基板。然蓝宝石基板的导热性不良,因而限制蓝光发光二极管必须采用正负金属电极同在基板一侧的横向导通结构。因此,此结构使得发光面积缩减外,更因电流推挤效应和横向路径,致使LED装置的顺向压降(Vf)及串联电阻增加。产生的大量热直接影响外部量子效率。
利用准分子激光剥离制程技术,以高散热基板来取代传统蓝宝石基板已行的多年。虽已商业化,其复杂的制程与低良率使得制作成本依旧高昂。短波长(<355nm)准分子激光束可穿透具高能隙抛光的蓝宝石基板,而在外延缓冲层(u-GaN)和蓝宝石间的界面被吸收。吸收的能量在u-GaN的表面累积并转换成热能,致使u-GaN气化并释放氮气。随后,释出的氮气所产生的压力会对相邻隔绝的外延组件与散热基板产生破坏。因此,采用接合(bonding)或电镀(electroplating)技术所形成的脆弱接口的剥落会有可靠度的问题,如光输出功率快速降低、封装后的顺向压降(Vf)增加。因此,不论是采用接合或电镀制程所制作散热基板来取代目前使用的基板,势必用更复杂的制程来加强散热基板与外延组件间接口的接合强度。为改善LLO的良率,必须将相邻的两外延组件间的主要隔绝道径的宽度放宽,也因此造成2时晶圆的产量低,间接增加制作成本。
发明内容
本案的目的为提供一种形成具有排热结构的垂直结构发光二极管(LED)的方法,其步骤至少包含:a)提供蓝宝石基板;b)在蓝宝石基板上沉积多个凸部,其高度为p;c)形成具有多个凹部的缓冲层,凹部的深度q小于p,以致当凸部容纳于缓冲层的凹部时,在其间形成多个间隙;d)在缓冲层上生长多个发光层,具有形成于发光层和缓冲层间的介质层;e)蚀刻穿透发光层和缓冲层来形成排热用的通道;f)通过准分子激光剥离(LLO)来移除蓝宝石基板和凸部;g)粗化介质层;以及h)在粗化的介质层上沉积电极。
根据本案构想,凸部是通过化学气相沉积法(CVD)或物理气相沉积法(PVD),之后以光蚀刻制程、湿蚀刻制程或干蚀刻制程来沉积。
根据本案构想,凸部包含SiOx、Si3N4、TiOx、V2O5、ITO、IZO、ZrO2、Ta2O5、Al2O3、ZnO、MgO或MgF2。
根据本案构想,凸部的剖面形状为底角大于60°的等腰梯形,其高度p大于1μm,任两相邻的凸部距离小于1μm。
根据本案构想,凸部形成条状或点状图案。
根据本案构想,缓冲层的形状取决于其生长压力、生长时间和生长温度的参数。
根据本案构想,缓冲层由使用于蓝光LED的未掺杂的氮化镓(u-GaN)或使用于紫光LED的氮化铝(AlN)所制成。
根据本案构想,缓冲层是通过金属有机化学气相沉积法(MOCVD)或高气相外延法(high vapor-phase epitaxy,HVPE)来沉积。
本案的另一目的为提供一种形成具有排热结构的垂直结构发光二极管(LED)的方法,包括以下步骤:a)提供蓝宝石基板;b)在蓝宝石基板上沉积多个凸部,其凸部宽度为m;c)形成具有多个凹部的缓冲层,凹部的宽度n大于m,以致当凸部容纳于缓冲层的凹部时,在其间形成复数个间隙;d)在缓冲层上生长多个发光层,具有形成于发光层和缓冲层间的介质层;e)蚀刻穿透多个发光层和缓冲层来形成通道;f)通过准分子激光剥离(excimer laserlift-off,LLO)来移除蓝宝石基板和凸部;g)粗化介质层;以及h)在粗化的介质层上沉积电极。
根据本案构想,凸部是通过化学气相沉积法(CVD)或物理气相沉积法(PVD),之后以光蚀刻制程、湿蚀刻制程、或干蚀刻制程来沉积。
根据本案构想,凸部包括SiOx、Si3N4、TiOx、V2O5、ITO、IZO、ZrO2、Ta2O5、Al2O3、ZnO、MgO或MgF2。
根据本案构想,凸部形成条状或点状图案。
根据本案构想,缓冲层的形状取决于其生长压力、生长时间和生长温度的参数。
根据本案构想,缓冲层由使用于蓝光LED的未掺杂的氮化镓(u-GaN)或使用于紫光LED的氮化铝(AlN)所制成。
根据本案构想,缓冲层是通过金属有机化学气相沉积法(MOCVD)或高气相外延法(high vapor-phase epitaxy,HVPE)来沉积。
附图说明
图1至图10绘示本发明的垂直结构LED的形成;
图11A和图11B绘示本发明的基板上凸部的俯视图;
图12绘示本发明凸部的示意剖面图。
附图标记说明:
100-蓝宝石基板;101-凸部;102-缓冲层;103-凹部;104-间隙;105-发光层;106-介质层;107-通道;108-接合材料;109-接合基板;110-电极。
具体实施方式
为解决电流推挤效应造成的排热问题,现亟需具有排热结构的垂直结构发光二极管。如下所述,本发明的实施例揭示一种形成具有排热结构的垂直结构发光二极管的方法。
图1至图10绘示本发明的第一实施例。本实施例中,首先提供具有抛光表面的蓝宝石基板100。然后在蓝宝石基板100上沉积多个凸部101,其各自高度为p、宽度为m。接下来,形成于凸部101上的缓冲层102具有多个凹部103,各自深度为q、宽度为n。凸部101容纳于缓冲层102的凹部103。如图4A,使凸部101的高度p大于凹部103的深度q,因而在蓝宝石基板100和缓冲层102间形成多个间隙104,以利排热。凸部宽度m小于凹部宽度n,间隙104亦可形成,如图4B。
凸部101是通过化学气相沉积法(CVD)或物理气相沉积法(PVD),之后施以光蚀刻制程、蚀刻制程等所形成。凸部101可形成点状图案(如图11A)、条状(如图11B)或任何其它的几何图形。图案的形状和尺寸可利用光罩来控制。凸部101不限于有机材料(如单体、寡聚体、或聚合物),亦可由无机材料所制成,如SiOx、Si3N4、TiOx、V2O5、ITO、IZO、ZrO2、Ta2O5、Al2O3、ZnO、MgO或MgF2等。再者,凸部101亦可为分布布拉格反射镜(distributed braggreflector,DBR)。凸部101可由旋涂式玻璃法(spin on glass)来制成。
若用于蓝光LED,缓冲层102可由未掺杂氮化镓(u-GaN)制成,若用于紫光LED,则由氮化铝(AlN)制成。缓冲层102可通过金属有机化学气相沉积法(MOCVD)、或高气相外延法(high vapor-phase epitaxy,HVPE)来沉积。缓冲层102的生长压力、生长时间和生长温度的参数会影响其形状,亦控制凹部103的深度。
在本实施例中,凸部101的剖面形状为图12所绘示的等腰梯形。凸部101的高度p最好大于1μm,同时蓝宝石基板100与等腰梯形其中一边之间的底角θ大于60°。此外,任两相邻的凸部101间的距离d最好小于1μm。本实施例中凸部101的剖面虽为等腰梯形,然其不限于此,亦可为任何其它形状,如平滑凸块状、矩形或三角形。
缓冲层102形成后,多个发光层105生长于缓冲层102上,具有形成于发光层105和缓冲层102间的介质层106。介质层106可由n-GaN来制成。发光层105可包含n-GaN层、多量子井(multi-quantum well,MQW)层、AlGaN层、p-GaN层、传导层、反射层、保护层以及金属层。由于发光二极管的发光层的结构并非本发明的标的,将省略形成于缓冲层102上的各层的叙述。
接下来,蚀刻穿透发光层105和缓冲层102来形成通道107,以排热。本实施例虽采用干蚀刻,然亦可采用电浆蚀刻(plasma etching)。
之后,作为底部结构的接合基板109通过接合材料108以接合在发光层105上,用来提供LED的支座。接合材料108可为镍、金、银或其它具有良好导电性和延展性的金属材料。本实施例的接合基板109是铜板。上述基板的接合可由电镀取代。
其后,利用准分子激光剥离(LLO)制程来移除蓝宝石基板100和凸部101。在准分子激光剥离制程期间产生气化的氮气和热气会沿着间隙104和通道107逸散,如此可防止LED结构中的热和压力所导致的裂缝产生。
此外,将介质层106粗化并沉积电极110于其上。电极110可由铜、金、镍、银或其它材料并采用真空蒸镀法(vacuum evaporation plating)来制成。最后可得到垂直结构的发光二极管。
虽然本发明已以实施例揭露如上,然其并非用以限定本发明。反之,任何所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围当视后附的权利要求范围所界定者为准。
Claims (15)
1.一种形成具有排热结构的垂直结构发光二极管(LED)的方法,其特征在于,包括以下步骤:
a)提供蓝宝石基板;
b)在蓝宝石基板上沉积复数个凸部,其高度为p;
c)形成具有复数个凹部的缓冲层,所述凹部的深度q小于p,以致当凸部容纳于缓冲层的凹部时,在其间形成复数个间隙,以利排热;
d)在缓冲层上生长复数个发光层,具有形成于复数个发光层和缓冲层间的介质层,其中介质层由n-GaN来制成;
e)蚀刻穿透复数个发光层和缓冲层来形成通道,以利排热;
f)通过准分子激光剥离来移除蓝宝石基板和凸部;
g)粗化介质层;以及
h)在粗化的介质层上沉积电极。
2.根据权利要求1的方法,其中,所述凸部是通过化学气相沉积法或物理气相沉积法来沉积,再通过光蚀刻制程、湿蚀刻制程或干蚀刻制程来成型。
3.根据权利要求1的方法,其中,所述凸部包括SiOx、Si3N4、TiOx、V2O5、ITO、IZO、ZrO2、Ta2O5、Al2O3、ZnO、MgO或MgF2。
4.根据权利要求1的方法,其中,所述凸部的剖面形状为底角大于60°的等腰梯形,其高度p大于1μm,任两相邻的凸部距离小于1μm。
5.根据权利要求1的方法,其中,所述凸部形成条状或点状图案。
6.根据权利要求1的方法,其中,所述缓冲层的形状取决于其生长压力、生长时间和生长温度的参数。
7.根据权利要求1的方法,其中,所述缓冲层由使用于蓝光LED的未掺杂氮化镓(u-GaN)或使用于紫光LED的氮化铝(AlN)所制成。
8.根据权利要求1的方法,其中,所述缓冲层是通过金属有机化学气相沉积法或高气相外延法来沉积。
9.一种形成具有排热结构的垂直结构发光二极管的方法,其特征在于,包括以下步骤:
a)提供蓝宝石基板;
b)在蓝宝石基板上沉积复数个凸部,凸部宽度为m;
c)形成具有复数个凹部的缓冲层,所述凹部的宽度n大于m,以致当凸部容纳于缓冲层的凹部时,在其间形成复数个间隙,以利排热;
d)在缓冲层上生长复数个发光层,具有形成于复数个发光层和缓冲层间的介质层,其中介质层由n-GaN来制成;
e)蚀刻穿透复数个发光层和缓冲层来形成通道,以利排热;
f)通过准分子激光剥离来移除蓝宝石基板和凸部;
g)粗化介质层;以及
h)在粗化的介质层上沉积电极。
10.根据权利要求9的方法,其中,所述凸部是通过化学气相沉积法或物理气相沉积法来沉积,再通过光蚀刻制程、湿蚀刻制程或干蚀刻制程来成型。
11.根据权利要求9的方法,其中,所述凸部包括SiOx、Si3N4、TiOx、V2O5、ITO、IZO、ZrO2、Ta2O5、Al2O3、ZnO、MgO或MgF2。
12.根据权利要求9的方法,其中,所述凸部形成条状或点状图案。
13.根据权利要求9的方法,其中,所述缓冲层的形状取决于其生长压力、生长时间和生长温度的参数。
14.根据权利要求9的方法,其中,所述缓冲层由使用于蓝光LED的未掺杂氮化镓(u-GaN)或使用于紫光LED的氮化铝(AlN)所制成。
15.根据权利要求9的方法,其中,所述缓冲层是通过金属有机化学气相沉积法或高气相外延法来沉积。
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