CN102097524B - Method for diffusing high sheet resistance of solar cells - Google Patents
Method for diffusing high sheet resistance of solar cells Download PDFInfo
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- CN102097524B CN102097524B CN201010294746A CN201010294746A CN102097524B CN 102097524 B CN102097524 B CN 102097524B CN 201010294746 A CN201010294746 A CN 201010294746A CN 201010294746 A CN201010294746 A CN 201010294746A CN 102097524 B CN102097524 B CN 102097524B
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- diffusion
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- sheet resistance
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 230000006641 stabilisation Effects 0.000 claims description 8
- 238000011105 stabilization Methods 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000012876 topography Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for diffusing high sheet resistance of solar cells. The method is characterized by texturing the surface of a solar crystal silicon wafer, sending the silicon wafer to a diffusion furnace for high sheet resistance diffusion and then carrying out subsequent solar cell processes. The method has the following advantages: (1) superior sheet resistance uniformity can be still maintained when high sheet resistance is diffused; (2) through introducing TCA or TCE during pre-oxidation, oxidation can be sped up, the substrate fault number can be reduced and the minority carrier lifetime of the substrate silicon can be prolonged; (3) dead layers can be well avoided through oxide layers; and (4) surface concentration and junction depth topography of diffusion can be well controlled through low-temperature pre-deposition and high-temperature junction propelling forming.
Description
Technical field
The present invention relates to a kind of production method of solar cell, especially a kind of method of diffusion of realizing superior uniformity high square resistance.
Background technology
Photovoltaic generation is a very important field during solar energy utilizes, and seeks new technology, new material, and new technology improves battery conversion efficiency, and reducing cost is a current very urgent task.
The square resistance of crystal silicon solar energy battery diffusion is directly related with battery performance; The diffusion square resistance of existing volume production is basically between 50～65 Ω/mouths; Improve the shallow junction diffusion of the square resistance of diffusion; Can improve the spectral response of solar cell effectively, make the current/voltage of battery that significantly lifting arranged at short-wave band.But for common diffusion technology, uniformity is variation along with the raising of side's resistance, and this can make the sintering of high square resistance silicon chip and positive electrode slurry become difficult more, and series resistance can be higher.
High square resistance is diffused in the selectivity diffusion SE battery technology and seems more important, and through the selectivity diffusion, the field square resistance of SE battery can be done very up to 100 Ω/more than the mouth, this is for common diffusion technology, and uniformity is exactly a very big challenge.
Summary of the invention
The technical problem that the present invention will solve is: propose a kind of simple control easily, high-temperature stability, the high square resistance method of diffusion of excellent uniformity.
The technical scheme that the present invention adopted is: a kind of solar cell high square resistance method of diffusion may further comprise the steps:
1) silicon chip surface is cleaned and the silicon chip surface texturing is handled;
2) under the temperature of 700～800 ℃ of low temperature, silicon chip is sent in the diffusion furnace tube, fed big nitrogen, in logical big nitrogen, boiler tube is warming up to 750～800 ℃ of the required temperature of pre-deposition;
3) treat temperature stabilization after, aerating oxygen, and feed TCA simultaneously or TCE gas carries out the growth of preparatory oxygen, preoxidation time was controlled at 10～40 minutes, the thickness of resulting oxide-film is 5～30nm;
4) close TCA or TCE gas, feed POCl
3, gas flow is 0.5～4 liter/minute, carries out phosphorus P diffusion, be 5～15 minutes diffusion time;
5) close POCl
3Gas, elevated temperature to 800～870 ℃, when heating up, oxygen and remaining POCl
3React, and tie propelling simultaneously;
6) behind the temperature stabilization, carry out the High temperature diffusion knot again and advance, the time is 5～20 minutes;
7) cooling, silicon chip is come out of the stove.
Specifically; The flow of the big nitrogen that feeds step 2 of the present invention) is 5～20 liters/minute; The oxygen flow that feeds in the described step 3) is 0.3～2 liter/minute; The TCA or the TCE gas flow that feed are 0.2～1 liter/minute, and described silicon chip is P type monocrystalline or polysilicon, and resistivity is 0.5～10 Ω cm.
The invention has the beneficial effects as follows: (1) still can keep superior side's resistance uniformity when spreading high square resistance very; (2) feeding TCA or TCE can accelerate oxidation in pre-oxidation, reduce base fault number, improve the minority carrier life time of base silicon; (3) can well avoid the appearance of dead layer through oxide layer; (4) low temperature pre-deposition and high temperature advance the surface concentration and the junction depth pattern of the method ability better controlled diffusion that forms knot.
Embodiment
Combine embodiment that the present invention is done further detailed explanation now.These only explain basic structure of the present invention in a schematic way, so it only shows the formation relevant with the present invention.
Select P type polysilicon chip, crystal face (100), doping content 0.5 Ω cm.Silicon chip after the section carries out surface wool manufacturing through conventional cleaning.
Embodiment 1
The silicon chip that 1) under the temperature of 750 ℃ of low temperature, will spread is sent into diffusion furnace tube.
2) in logical big nitrogen, boiler tube is warming up to 800 ℃ of the required temperature of pre-deposition, here 6 liters/minute of the flows of big nitrogen.
3) treat temperature stabilization after, aerating oxygen, 0.6 liter/minute of oxygen flow; And feed TCA gas, 0.3 liter/minute of gas flow simultaneously.Carry out the growth of preparatory oxygen, preoxidation time was controlled at 10 minutes, here the thickness 10nm of oxide-film.
4) close TCA/TCE gas, feed POCl
3, 0.8 liter/minute of gas flow carries out phosphorus P diffusion, 12 minutes diffusion times.
5) close POCl
3Gas, elevated temperature to 850 ℃, when heating up, oxygen can be the POCl of remnants
3React away, and can tie propelling simultaneously.
6) behind temperature stabilization, carry out the High temperature diffusion knot again and advance 17 minutes time.
7) cooling, silicon chip is come out of the stove and is carried out other technologies of follow-up solar cells such as plated film etching.
The battery sheet square resistance 65 Ω/mouths of working it out like this, uniformity＜2%.The so common relatively diffusion battery sheet of battery sheet efficient efficient high about 0.15%.
Embodiment 2:
Select the p type single crystal silicon sheet, crystal face (100), doping content 0.5 Ω cm.Silicon chip after the section carries out surface wool manufacturing through conventional cleaning.
The silicon chip that 1) under the temperature of 700 ℃ of low temperature, will spread is sent into diffusion furnace tube.
2) in logical big nitrogen, boiler tube is warming up to 770 ℃ of the required temperature of pre-deposition, here 15 liters/minute of the flows of big nitrogen.
3) treat temperature stabilization after, aerating oxygen, 1 liter/minute of oxygen flow; And feed TCA or TCE gas, 0.5 liter/minute of gas flow simultaneously.Carry out the growth of preparatory oxygen, preoxidation time was controlled at 18 minutes, here the thickness 20nm of oxide-film.
4) close TCA/TCE gas, feed POCl
3, 3 liters/minute of gas flows carry out phosphorus P diffusion, 8 minutes diffusion times.
5) close POCl
3Gas, elevated temperature to 825 ℃, when heating up, oxygen can be the POCl of remnants
3React away, and can tie propelling simultaneously.
6) behind temperature stabilization, carry out the High temperature diffusion knot again and advance 13 minutes time.
7) cooling, silicon chip is come out of the stove and is carried out other technologies of follow-up solar cells such as plated film etching.
The battery sheet square resistance 105 Ω/mouths of working it out like this, uniformity＜5%.The so common relatively diffusion of SE battery sheet efficient SE battery sheet efficient high about 0.2%.
What describe in the above specification is embodiment of the present invention; Various not illustrating constitutes restriction to flesh and blood of the present invention; Under the those of ordinary skill of technical field after having read specification can to before described embodiment make an amendment or be out of shape, and do not deviate from essence of an invention and scope.
Claims (4)
1. solar cell high square resistance method of diffusion is characterized in that may further comprise the steps:
1) silicon chip surface is cleaned and the silicon chip surface texturing is handled;
2) under the temperature of 700～800 ℃ of low temperature, silicon chip is sent in the diffusion furnace tube, fed big nitrogen, in logical big nitrogen, boiler tube is warming up to 750～800 ℃ of the required temperature of pre-deposition;
3) treat temperature stabilization after, aerating oxygen, and feed TCA simultaneously or TCE gas carries out the growth of preparatory oxygen, preoxidation time was controlled at 10～40 minutes, the thickness of resulting oxide-film is 5～30nm;
4) close TCA or TCE gas, feed POCl
3, gas flow is 0.5～4 liter/minute, carries out phosphorus P diffusion, be 5～15 minutes diffusion time;
5) close POCl
3Gas, elevated temperature to 800～870 ℃, when heating up, oxygen and remaining POCl
3React, and tie propelling simultaneously;
6) behind the temperature stabilization, carry out the High temperature diffusion knot again and advance, the time is 5～20 minutes;
7) cooling, silicon chip is come out of the stove.
2. solar cell high square resistance method of diffusion as claimed in claim 1 is characterized in that: the flow of the big nitrogen that feeds described step 2) is 5～20 liters/minute.
3. solar cell high square resistance method of diffusion as claimed in claim 1 is characterized in that: the oxygen flow that feeds in the described step 3) is 0.3～2 liter/minute, and the TCA of feeding or TCE gas flow are 0.2～1 liter/minute.
4. like claim 1,2 or 3 described solar cell high square resistance method of diffusion, it is characterized in that: described silicon chip is P type monocrystalline or polysilicon, and resistivity is 0.5～10 Ω cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010294746A CN102097524B (en) | 2010-09-28 | 2010-09-28 | Method for diffusing high sheet resistance of solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010294746A CN102097524B (en) | 2010-09-28 | 2010-09-28 | Method for diffusing high sheet resistance of solar cells |
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| Publication Number | Publication Date |
|---|---|
| CN102097524A CN102097524A (en) | 2011-06-15 |
| CN102097524B true CN102097524B (en) | 2012-10-17 |
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| CN201010294746A Active CN102097524B (en) | 2010-09-28 | 2010-09-28 | Method for diffusing high sheet resistance of solar cells |
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Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367521B (en) * | 2011-12-31 | 2016-04-06 | 英利能源（中国）有限公司 | A kind of method reducing solar cell dead layer |
| CN102509703A (en) * | 2012-01-06 | 2012-06-20 | 浙江金贝能源科技有限公司 | Diffusing method for solar panels |
| CN102623559A (en) * | 2012-03-27 | 2012-08-01 | 山东力诺太阳能电力股份有限公司 | Process for preparing emitter without dead layer of solar cell by oxidation |
| CN102637778A (en) * | 2012-05-10 | 2012-08-15 | 英利能源（中国）有限公司 | PN junction diffusion method |
| CN102856435B (en) * | 2012-09-05 | 2016-12-21 | 浙江鸿禧能源股份有限公司 | A kind of improve the method for diffusion of sheet resistance uniformity after selective emitter etching |
| CN102820383B (en) * | 2012-09-11 | 2015-07-01 | 江阴鑫辉太阳能有限公司 | Spread method of polycrystalline silicon solar cell |
| CN102945797B (en) * | 2012-12-03 | 2015-12-09 | 天威新能源控股有限公司 | A kind of low temperature low surface concentration high square resistance diffusion technology |
| CN103367125A (en) * | 2013-07-18 | 2013-10-23 | 英利能源（中国）有限公司 | Method for improving diffusion quality by changing polycrystalline silicon slice phosphorus source components |
| CN103618023B (en) * | 2013-10-18 | 2016-03-23 | 浙江晶科能源有限公司 | A kind of high square resistance diffusion technology |
| CN104638058A (en) * | 2013-11-15 | 2015-05-20 | 江苏天宇光伏科技有限公司 | High-square-resistance diffusion process capable of lowering cost and increasing conversion efficiency |
| CN104319308B (en) * | 2014-09-16 | 2017-02-08 | 上饶光电高科技有限公司 | Method for improving diffusion uniformity of crystalline silicon solar cell |
| CN104766906B (en) * | 2015-04-08 | 2017-11-17 | 常州时创能源科技有限公司 | The diffusion technique of crystal silicon solar energy battery |
| CN105200525A (en) * | 2015-08-20 | 2015-12-30 | 黄冬焱 | Battery diffusion aftertreatment process |
| CN106206847B (en) * | 2016-08-10 | 2017-12-19 | 横店集团东磁股份有限公司 | A kind of super low concentration POCl based on low pressure diffusion furnace3High temperature diffusion process |
| CN107081958A (en) * | 2017-06-12 | 2017-08-22 | 通威太阳能（合肥）有限公司 | Cost-reducing and efficiency-improving positive electrode screen printing plate and using method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885568A (en) * | 2005-06-21 | 2006-12-27 | 中芯国际集成电路制造(上海)有限公司 | Two-sided solar battery manufacturing method |
| CN101217170A (en) * | 2007-12-27 | 2008-07-09 | 北京市太阳能研究所有限公司 | A diffusion technique applied on silicon solar battery |
| CN101237010A (en) * | 2008-02-29 | 2008-08-06 | 珈伟太阳能(武汉)有限公司 | Method for improving solar battery diffusion |
-
2010
- 2010-09-28 CN CN201010294746A patent/CN102097524B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885568A (en) * | 2005-06-21 | 2006-12-27 | 中芯国际集成电路制造(上海)有限公司 | Two-sided solar battery manufacturing method |
| CN101217170A (en) * | 2007-12-27 | 2008-07-09 | 北京市太阳能研究所有限公司 | A diffusion technique applied on silicon solar battery |
| CN101237010A (en) * | 2008-02-29 | 2008-08-06 | 珈伟太阳能(武汉)有限公司 | Method for improving solar battery diffusion |
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| CN102097524A (en) | 2011-06-15 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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