CN101237010A - Method for improving solar battery diffusion - Google Patents

Method for improving solar battery diffusion Download PDF

Info

Publication number
CN101237010A
CN101237010A CNA2008100469663A CN200810046966A CN101237010A CN 101237010 A CN101237010 A CN 101237010A CN A2008100469663 A CNA2008100469663 A CN A2008100469663A CN 200810046966 A CN200810046966 A CN 200810046966A CN 101237010 A CN101237010 A CN 101237010A
Authority
CN
China
Prior art keywords
diffusion
oxygen
phosphorus
nitrogen
duration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2008100469663A
Other languages
Chinese (zh)
Other versions
CN100570906C (en
Inventor
孙永明
丁孔奇
李树贵
周炜
熊光宇
徐俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiawei Solar (Wuhan) Co Ltd
Original Assignee
Jiawei Solar (Wuhan) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiawei Solar (Wuhan) Co Ltd filed Critical Jiawei Solar (Wuhan) Co Ltd
Priority to CNB2008100469663A priority Critical patent/CN100570906C/en
Publication of CN101237010A publication Critical patent/CN101237010A/en
Application granted granted Critical
Publication of CN100570906C publication Critical patent/CN100570906C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The present invention discloses a method for improving the diffusion of a solar cell, comprising the following steps: A. adopting silicon material and P conductive type; B. diffusion: a silicon wafer chemically reacts with oxygen and phosphorus oxychloride at high temperature to produce phosphor, phosphorus pentachloride, phosphorus pentoxide and chlorine; C. feeding oxygen to reallocate: feeding oxygen to continue to react with unexhausted PCl5 to produce phosphorus; D. a phosphor atom Drive in process which is combined with the reallocation; E. the surface block resistance is 28-38 omega after the diffusion, the reallocation and Drive in processes. The method is capable of improving the conversion efficiency of high resistance rate single crystal silicon solar cells, the diffusion of the diffused silicon wafer surface is uniform; the method is easily implemented, the operation is convenient and the cost is low.

Description

Improve the method for solar cell diffusion
Technical field
The invention belongs to monocrystaline silicon solar cell and make the field, more specifically relate to a kind of method of improving the solar cell diffusion, this method is widely used in the manufacture process of monocrystaline silicon solar cell (the especially higher silicon chip of matrix resistivity).
Background technology
The main manufacturing process standardization of single crystal silicon solar cell at present, the key step of its experience is:
1. chemical cleaning and surface structuration are handled (making herbs into wool): making originally by chemical reaction, the silicon chip surface of light forms the pyramid shape structure to strengthen the absorption of light, preferably under the situation, this step can be reduced to the silicon chip surface reflectivity about 10% by 35% in effect;
2. diffusion: this is one of core procedure of solar cell manufacture process, and P type silicon chip becomes the N type in the diffusion rear surface, thereby forms PN junction, and silicon chip just has photovoltaic effect thus.And the concentration of diffusion, the degree of depth and uniformity directly influence the electrical property of battery, weigh with square resistance on the situation macroscopic view of diffusion, and finer understanding need be measured diffusion concentration, the degree of depth etc. by special equipment;
3. peripheral etching: the conductive layer that forms at silicon chip edge when this step is mainly removed diffusion (both positive and negative polarity of battery during the difference of PN junction two ends) with PN junction two terminal shortcircuits, present most of producer all uses plasma etching, equipment still is that technology is all ripe relatively, and etching effect is also fine;
4. deposition antireflective coating: mainly contain two class antireflective coatings at present, silicon nitride (Si 3N 4) and titanium oxide (TiO 2), the stable in properties of silicon nitride own, silicon chip there is good passivation effect, carrying out to follow-up operation is also very beneficial, also better in appearance than titanium oxide, mass effect silicon nitride film preferably can be reduced to surface reflectivity about 4% by making 10% behind the matte again, all adopts plasma-enhanced chemical vapor deposition PECVD (PECVD) (tubular type or flat, the former is in the majority) at present during photovoltaic industry silicon nitride film basically; The manufacturing process of oxidation titanium film is simpler than silicon nitride, and condition enterprise preferably can use MOCVD to deposit, with the control uniformity; It is with low cost using the benefit of oxidation titanium film maximum, but along with the continuous maturation of PECVD film-forming process, titanium oxide is substituted gradually.PECVD also is one of core process;
5. print electrode: this is a kind of being widely adopted, and is with low cost, can be used for the method for large-scale industrial production, and principle is identical with printing word on paper, but the selection that will note printing slurry.Because the silicon chip raw material more and more approaches (being about 200um at present) at present, manual operations is no longer suitable, so various automatic printing equipment is come upon the stage, target is also very clear: simultaneously fragment is controlled at acceptable scope in the raising printing quality;
6. sintering: this is to make the process that forms alloy between the electrode of printing and the silicon chip, the situation of the silicon nitride film of the formation situation of PN junction and PECVD deposition when concrete parameter depends on diffusion;
Early stage solar cell production line adopts the chain type diffusion furnace to cooperate the liquid phosphorus source to spread, but the very big diffusion-condition of production capacity allows of no optimist, battery efficiency is difficult to break through 16%, in recent years along with the maturation of technology, domestic solar cell manufacturing enterprise adopts tubular diffusion furnace to cooperate gaseous state phosphorus source to spread in a large number, diffusion-condition has improvement greatly, adds the use of PECVD, and battery efficiency integral body reaches 16%～17% level.Preamble is narrated, one of core process of producing as solar cell, and the concentration of diffusion, the degree of depth and uniformity directly affect the performance of battery, and comparatively desirable diffusion-condition is: the silicon chip surface doping content is evenly and 5 * 10 19Atom/cm 3Up and down; The concentration of phosphorus atoms is identical in the same degree of depth.Why requiring surface concentration in a scope, is because excessive doping content can make the compound aggravation of surperficial photo-generated carrier, reduces the absorption of battery to light on the contrary.So in actual production, always make more uniform diffusion (exactly because tubular type diffusion obviously is better than its diffusion uniformity of chain type diffusion good) as much as possible.In order to continue to improve battery efficiency aborning, novel batteries such as grooving and grid burying, selective emitting electrode structure, backside point contact structures have appearred again in the industry, but realize that volume production needs huge technology and financial support, be not that all enterprises can both bear, and the manufacturing of high resistivity single crystal silicon solar cell reach high conversion efficiency because the relation of matrix is more difficult.
Summary of the invention
The object of the present invention is to provide a kind of method of improving the solar cell diffusion, this method can promote the conversion efficiency height of high resistivity monocrystaline silicon solar cell, and the silicon chip surface diffusion of diffusion back evenly, and is easy to implement the method, easy and simple to handle, and with low cost.
A kind of method of improving the solar cell diffusion, its technical scheme is:
Be improved to the processing step that distributes again:
Silicon chip preheating (800 ℃～900 ℃)-nitrogen is taken the phosphorus source and is entered and begin diffusion and form N type layer-stop logical phosphorus, begins to feed dried oxygen (830 ℃～900 ℃ of temperature, flow 1～4L/min, time 5～15min, oxygen and the PCl that does not run out of 5Continue reaction and generate phosphorus)-drive in process-process end
A kind of method of improving the solar cell diffusion, its concrete steps are as follows:
A. the silicon chip raw material chooses
Because the difference of silicon chip raw material can be formulated production technology according to the performance of raw material, the Specifeca tion speeification such as the following table of the solar energy level silicon tablet raw material of main flow:
Conduction type The P type
Thickness 200um～220um
Resistivity 0.5～2Ωcm
The silicon chip raw material major parameter that uses is:
Conduction type The P type
Thickness 280um～310um
Resistivity 0.5～10Ωcm
B. diffusion
Silicon chip in high temperature (800-900 ℃) atmosphere with oxygen, phosphorus oxychloride generation chemical reaction generates phosphorus, phosphorus pentachloride, phosphorus pentoxide, chlorine etc., the main chemical reactions equation is as follows:
Si+O2＝SiO2
5POCl3=3PCl5+P2O5 (high temperature)
4PCl5+5O2=2P2O5+10Cl2 ↑ (high temperature)
2P2O5+5Si＝5SiO2+4P
Diffusion gas flow: big nitrogen 20～35L/min; Little nitrogen (carrying the phosphorus source) 1.6～2.5L/min; Oxygen 2.0～3.5L/min; Duration 20～40min;
C. logical oxygen distributes again,
The phosphorus source that the little nitrogen of course of reaction carries is excessive, after the diffusion B step, and aerating oxygen (flow 1～4L/min), the PCl that makes it Yu do not run out of again 5Continue reaction and generate more phosphorus:
4PCl5+5O2＝2P2O5+10Cl2↑
2P2O5+5Si＝5SiO2+4P；
The phosphorus atoms of Sheng Chenging then continues to deep layer diffusion (phosphorus atoms continues diffusion) under the high temperature more before.Temperature is controlled at 830 ℃～900 ℃; Gas flow: big nitrogen 20～35L/min; Stop logical little nitrogen; Oxygen 1～4L/min; Duration 5～15min;
D. with the phosphorus atoms Drive in process that distributes and combine again
Drive in process is the process that foreign atom at high temperature spreads to deep layer, can make the different local doping contents of silicon chip surface become more even.Logical oxygen continues to feed big nitrogen 20～35L/min after distributed process finishes again, stops logical little nitrogen and oxygen, duration 8～20min, and temperature is controlled at 830 ℃～900 ℃;
E, process B, C, D diffusion, surperficial square resistance is 28-38 Ω/ after distribution and the Drive in process again.
The present invention compared with prior art has the following advantages and effect:
On the basis of existing solar cell fabrication process, improve, simple to operate, easy to use, need not to buy any equipment, raw material and time loss are little, but can significantly improve the electrical property of solar cell finished product.
Embodiment:
Example 1: a kind of method of improving the solar cell diffusion property, its step is as follows:
1) adopt raw material:
P type single crystal silicon, thickness 280um～300um, resistivity 0.5～7 Ω cm
2) diffusion
Diffusion temperature: 840 or 850 or 860 or 870 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 2.2L/min, dried oxygen 2.2L/min; Duration: 30min
3) logical oxygen distributes again
Temperature: 840 or 850 or 860 or 870 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 0L/min, dried oxygen 3L/min; Duration: 10min
4)Drive in
Temperature: 840 or 850 or 860 or 870 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 0L/min, dried oxygen 0/min; After the whole process of duration: 10min was finished, not having the silicon chip surface square resistance that distributes again was 35～39 Ω/, and it is 30～34 Ω/ that the silicon chip surface square resistance that distributes is again arranged.
Use the difference of battery on performance of two kinds of different diffusion processes, ask for an interview following table 1-1,1-2
Table 1-1 (not distributing again):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.604 4.98 1.9 0.444 4.27 63 12.79％
2 0.599 4.99 2.12 0.479 4.42 71 14.27％
3 0.598 5.11 2.12 0.476 4.45 69 14.27％
4 0.603 5.11 2.07 0.48 4.32 67 13.93％
5 0.592 4.9 1.78 0.459 3.88 61 11.98％
6 0.591 4.69 2.01 0.475 4.23 73 13.53％
7 0.602 5.09 2.19 0.48 4.57 72 14.74％
8 0.601 5.1 2.24 0.485 4.62 73 15.07％
9 0.602 5.17 2.23 0.478 4.66 72 15.01％
10 0.588 4.71 2.01 0.472 4.26 73 13.53％
11 0.593 4.8 2.09 0.478 4.37 73 14.06％
12 0.605 5.06 2.2 0.485 4.54 72 14.80％
13 0.599 5.13 2.17 0.476 4.55 71 14.60％
14 0.602 5.16 2.22 0.481 4.62 71 14.94％
15 0.599 5.08 2.11 0.475 4.44 69 14.20％
16 0.595 5.04 2.12 0.473 4.49 71 14.27％
17 0.605 5.19 2.3 0.49 4.7 73 15.48％
18 0.601 4.98 2 0.487 4.11 67 13.46％
19 0.596 5.09 2.1 0.477 4.4 69 14.13％
20 0.601 5.12 2.17 0.475 4.57 71 14.60％
21 0.6 5.07 2.15 0.478 4.49 71 14.47％
22 0.578 4.53 1.67 0.46 3.62 64 11.24％
23 0.589 4.97 1.85 0.469 3.94 63 12.45％
24 0.587 4.69 1.94 0.469 4.14 70 13.06％
Mean value 0.597 4.99 2.07 0.475 4.36 70 13.95％
Table 1-2 (have and distribute again and Drive in process):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.599 5.13 2.19 0.48 4.57 71 14.74％
2 0.597 5.16 2.19 0.478 4.59 71 14.74％
3 0.601 5.07 2.21 0.485 4.54 72 14.87％
4 0.601 5.14 2.26 0.485 4.65 73 15.21％
5 0.599 5.1 2.23 0.483 4.61 73 15.01％
6 0.6 5.19 2.26 0.483 4.68 73 15.21％
7 0.599 5.11 2.23 0.482 4.63 73 15.01％
8 0.598 5.12 2.29 0.49 4.68 75 15.41％
9 0.595 5.09 2.14 0.475 4.5 71 14.40％
10 0.599 5.14 2.19 0.478 4.58 71 14.74％
11 0.601 5.12 2.27 0.487 4.66 74 15.28％
12 0.595 5.08 2.12 0.472 4.5 70 14.27％
13 0.6 5.02 2.21 0.484 4.56 73 14.87％
14 0.602 5.17 2.25 0.483 4.65 72 15.14％
15 0.596 5.15 2.19 0.48 4.57 71 14.74％
16 0.598 5.14 2.25 0.483 4.65 73 15.14％
17 0.6 5.06 2.23 0.487 4.58 73 15.01％
18 0.596 5.16 2.17 0.474 4.58 70 14.60％
19 0.599 5.18 2.25 0.482 4.68 73 15.14％
20 0.602 5.14 2.24 0.483 4.64 72 15.07％
21 0.598 5.08 2.19 0.48 4.56 72 14.74％
22 0.601 5.12 2.27 0.488 4.65 74 15.28％
23 0.6 5.04 2.22 0.484 4.59 73 14.94％
24 0.598 5.11 2.24 0.483 4.64 73 15.07％
Mean value 0.599 5.12 2.22 0.482 4.61 72 14.94％
Example 2: a kind of method of improving the solar cell diffusion property, its step is as follows:
1) adopt raw material:
P type single crystal silicon, thickness 280um～300um, resistivity 0.5～7 Ω cm
2) diffusion (change temperature)
Diffusion temperature: 835 or 855 or 865 or 875 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 2.2L/min, dried oxygen 2.2L/min; Duration: 30min
3) logical oxygen distributes again
Temperature: 835 or 855 or 865 or 875 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 0L/min, dried oxygen 3L/min; Duration: 10min
4)Drive in
Temperature: 835 or 855 or 865 or 875 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 0L/min, dried oxygen 0/min; After the whole process of duration: 10min was finished, not having the silicon chip surface square resistance that distributes again was 35～38 Ω/, and it is 31～33 Ω/ that the silicon chip surface square resistance that distributes is again arranged.Ask for an interview following table 2-1,2-2.
Table 2-1 (not distributing again):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.599 5.22 2 0.445 4.5 64 13.46％
2 0.597 5.2 2.03 0.443 4.57 65 13.66％
3 0.596 5.21 2.21 0.472 4.69 71 14.87％
4 0.593 5.19 2.16 0.466 4.63 70 14.54％
5 0.597 5.22 2.19 0.466 4.7 70 14.74％
6 0.595 5.25 2.23 0.471 4.73 71 15.01％
7 0.599 5.29 2.34 0.484 4.84 74 15.75％
8 0.595 5.23 2.22 0.469 4.73 71 14.94％
9 0.601 5.18 2.26 0.479 4.72 73 15.21％
10 0.596 5.18 2.2 0.473 4.66 71 14.80％
11 0.597 5.19 2.14 0.461 4.64 69 14.40％
12 0.594 5.14 2.16 0.469 4.61 71 14.54％
13 0.594 5.18 2.18 0.47 4.65 71 14.67％
14 0.596 5.2 2.3 0.486 4.74 74 15.48％
15 0.598 5.22 2.31 0.483 4.78 74 15.55％
16 0.595 5.17 2.11 0.46 4.58 69 14.20％
17 0.593 5.23 2.26 0.483 4.69 73 15.21％
18 0.598 5.16 2.23 0.482 4.64 72 15.01％
19 0.601 5.2 2.2 0.47 4.68 70 14.80％
20 0.593 5.24 2.25 0.478 4.71 72 15.14％
Mean value 0.596 5.21 2.20 0.471 4.67 71 14.80％
Table 2-2 (have and distribute again and Drive in process):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.602 5.04 2.09 0.482 4.33 69 14.06％
2 0.608 5.19 2.39 0.504 4.74 76 16.08％
3 0.612 5.2 2.43 0.506 4.79 76 16.35％
4 0.605 5.19 2.28 0.494 4.62 73 15.34％
5 0.607 5.15 2.34 0.503 4.65 75 15.75％
6 0.602 4.94 2.24 0.499 4.5 75 15.07％
7 0.608 5.18 2.32 0.495 4.68 74 15.61％
8 0.597 5.08 2.17 0.485 4.48 72 14.60％
9 0.599 4.84 2.18 0.493 4.42 75 14.67％
10 0.607 5.42 2.49 0.501 4.98 76 16.76％
11 0.609 5.26 2.41 0.496 4.85 75 16.22％
12 0.605 5.2 2.29 0.49 4.68 73 15.41％
13 0.596 4.76 2.08 0.491 4.24 73 14.00％
14 0.604 5.13 2.24 0.492 4.56 72 15.07％
15 0.604 5.1 2.32 0.501 4.64 76 15.61％
16 0.603 5.1 2.26 0.492 4.59 73 15.21％
17 0.602 5.02 2.24 0.497 4.51 74 15.07％
18 0.608 5.12 2.31 0.501 4.61 74 15.55％
19 0.606 5.08 2.31 0.497 4.65 75 15.55％
20 0.606 5.19 2.39 0.504 4.74 76 16.08％
Mean value 0.605 5.11 2.29 0.496 4.61 74 15.40％
Example 3: a kind of method of improving the solar cell diffusion property, its step is as follows:
1) adopt raw material:
P type single crystal silicon, thickness 280um～300um, resistivity 0.5～7 Ω cm
2) diffusion (increase big nitrogen, dried oxygen flow reduces little nitrogen flow)
Diffusion temperature: 845 or 855 or 868 or 877 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 1.8L/min, dried oxygen 4L/min; Duration: 30min
3) logical oxygen distribute again (increasing big nitrogen, dried oxygen flow)
Temperature: 845 or 855 or 868 or 877 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 0L/min, dried oxygen 4L/min; Duration: 4min
4) Drive in (increasing big nitrogen flow)
Temperature: 845 or 855 or 868 or 877 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 0L/min, dried oxygen 0/min; After the whole process of duration: 10min was finished, not having the silicon chip surface square resistance that distributes again was 35～39 Ω/, and it is 39～41 Ω/ that the silicon chip surface square resistance that distributes is again arranged.Ask for an interview following table 3-1,3-2.
Table 3-1 (not distributing again):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.591 5.14 2.23 0.478 4.66 73 15.01％
2 0.591 5.01 2.09 0.47 4.45 71 14.06％
3 0.592 5.14 2.22 0.477 4.65 73 14.94％
4 0.596 5.16 2.21 0.476 4.64 72 14.87％
5 0.591 5.08 2.18 0.475 4.58 73 14.67％
6 0.596 5.17 2.28 0.485 4.71 74 15.34％
7 0.592 5.13 2.23 0.479 4.65 73 15.01％
8 0.591 5.17 2.26 0.482 4.69 74 15.21％
9 0.596 5.18 2.28 0.484 4.71 74 15.34％
10 0.588 5.11 2.22 0.48 4.63 74 14.94％
11 0.566 4.4 1.81 0.455 3.97 73 12.18％
12 0.597 5.14 2.25 0.483 4.66 73 15.14％
13 0.593 5.1 2.2 0.477 4.6 73 14.80％
14 0.579 4.88 2.04 0.46 4.44 72 13.73％
15 0.598 5.17 2.26 0.483 4.68 73 15.21％
16 0.595 5.11 2.2 0.482 4.57 73 14.80％
17 0.575 4.78 2 0.461 4.35 73 13.46％
18 0.597 5.18 2.27 0.483 4.71 73 15.28％
19 0.594 5.13 2.22 0.479 4.65 73 14.94％
20 0.594 5.05 2.18 0.479 4.55 73 14.67％
Mean value 0.591 5.06 2.18 0.476 4.58 73 14.68％
Table 3-2 (have and distribute again and Drive in process):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.585 5.12 2.24 0.479 4.67 75 15.07％
2 0.591 5.09 2.25 0.485 4.64 75 15.14％
3 0.591 5.09 2.24 0.483 4.63 74 15.07％
4 0.594 5.14 2.25 0.488 4.61 74 15.14％
5 0.593 5.07 2.23 0.485 4.61 74 15.01％
6 0.601 5.21 2.37 0.495 4.78 76 15.95％
7 0.59 5.03 2.23 0.489 4.56 75 15.01％
8 0.591 5.14 2.24 0.482 4.65 74 15.07％
9 0.59 5.08 2.19 0.489 4.49 73 14.74％
10 0.591 5.05 2.22 0.487 4.57 74 14.94％
11 0.592 5.15 2.22 0.482 4.6 73 14.94％
12 0.594 5.17 2.32 0.495 4.69 76 15.61％
13 0.591 5.12 2.24 0.482 4.64 74 15.07％
14 0.587 5.12 2.22 0.475 4.68 74 14.94％
15 0.597 5.25 2.36 0.489 4.82 75 15.88％
16 0.601 5.08 2.33 0.496 4.7 76 15.68％
17 0.598 5.26 2.34 0.49 4.78 74 15.75％
18 0.591 5.07 2.23 0.484 4.62 75 15.01％
19 0.59 5.06 2.23 0.483 4.61 75 15.01％
20 0.588 5.06 2.16 0.484 4.46 73 14.54％
Mean value 0.592 5.12 2.26 0.486 4.64 74 15.18％
Example 4: a kind of method of improving the solar cell diffusion property, its step is as follows:
1) adopt raw material:
P type single crystal silicon, thickness 280um～300um, resistivity 0.5～7 Ω cm
2) diffusion
Diffusion temperature: 842 or 852 or 862 or 872 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 1.8L/min, dried oxygen 4L/min; Duration: 30min
3) logical oxygen distribute again (changing dried oxygen flow)
Temperature: 842 or 852 or 862 or 872 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 0L/min, dried oxygen 3L/min; Duration: 4min
4)Drive in
Temperature: 842 or 852 or 862 or 872 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 0L/min, dried oxygen 0/min; After the whole process of duration: 10min was finished, not having the silicon chip surface square resistance that distributes again was 40～43 Ω/, and it is 37～41 Ω/ that the silicon chip surface square resistance that distributes is again arranged.Ask for an interview following table 4-1,4-2.
Table 4-1 (not distributing again):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.597 5.06 2.32 0.499 4.65 77 15.61％
2 0.597 5.14 2.3 0.489 4.71 75 15.48％
3 0.596 5.16 2.27 0.483 4.7 74 15.28％
4 0.597 5.18 2.26 0.481 4.7 73 15.21％
5 0.596 5.18 2.26 0.478 4.73 73 15.21％
6 0.595 5.18 2.18 0.469 4.66 71 14.67％
7 0.597 5.12 2.25 0.48 4.69 74 15.14％
8 0.594 5.16 2.25 0.478 4.7 73 15.14％
9 0.593 5.15 2.22 0.475 4.67 73 14.94％
10 0.594 5.11 2.3 0.491 4.68 76 15.48％
11 0.595 5.12 2.16 0.467 4.63 71 14.54％
12 0.579 4.74 1.99 0.461 4.31 72 13.39％
13 0.598 5.15 2.31 0.488 4.74 75 15.55％
14 0.599 5.16 2.29 0.483 4.73 74 15.41％
15 0.583 4.81 2.01 0.46 4.37 72 13.53％
16 0.594 5.15 2.23 0.475 4.71 73 15.01％
17 0.594 5.05 2.21 0.478 4.62 74 14.87％
18 0.598 5.12 1.94 0.442 4.38 63 13.06％
19 0.584 4.76 1.95 0.456 4.28 70 13.12％
20 0.595 5.15 2.21 0.479 4.62 72 14.87％
Mean value 0.594 5.08 2.20 0.476 4.61 73 14.77％
Table 4-2 (have and distribute again and Drive in process):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.593 5.13 2.3 0.491 4.68 76 15.48％
2 0.594 5.11 2.39 0.508 4.7 79 16.08％
3 0.595 5.14 2.32 0.499 4.65 76 15.61％
4 0.594 5.1 2.24 0.483 4.63 74 15.07％
5 0.595 5.14 2.27 0.486 4.68 74 15.28％
6 0.586 4.91 2.16 0.48 4.5 75 14.54％
7 0.596 5.17 2.26 0.481 4.7 73 15.21％
8 0.59 5.15 2.24 0.481 4.65 74 15.07％
9 0.588 4.87 2.14 0.48 4.46 75 14.40％
10 0.586 4.88 2.11 0.479 4.41 74 14.20％
11 0.591 5.08 2.22 0.481 4.62 74 14.94％
12 0.595 5.09 2.3 0.495 4.65 76 15.48％
13 0.594 5.13 2.27 0.484 4.69 75 15.28％
14 0.593 5.12 2.28 0.486 4.69 75 15.34％
15 0.59 5.11 2.24 0.482 4.64 74 15.07％
16 0.6 5.16 2.3 0.488 4.72 74 15.48％
17 0.6 5.13 2.27 0.485 4.69 74 15.28％
18 0.596 5.14 2.32 0.491 4.73 76 15.61％
19 0.597 5.11 2.33 0.502 4.63 76 15.68％
20 0.6 5.18 2.33 0.493 4.72 75 15.68％
Mean value 0.594 5.09 2.26 0.488 4.64 75 15.24％

Claims (1)

1, a kind of method of improving the solar cell diffusion the steps include:
A, employing silicon raw material, conduction type P type, thickness 280um～310um, resistivity 0.5～10 Ω cm;
B, diffusion: silicon chip in 800-900 ℃ of atmosphere with oxygen, phosphorus oxychloride generation chemical reaction generates phosphorus, phosphorus pentachloride, phosphorus pentoxide, chlorine, equation is as follows:
Si+O2＝SiO2；
5POCl3＝3PCl5+P2O5；
4PCl5+5O2＝2P2O5+10Cl2↑；
2P2O5+5Si＝5SiO2+4P；
The diffusion process gas flow:
Big nitrogen 20～35L/min; Little nitrogen 1.6～2.5L/min; Oxygen 2.0～3.5L/min;
Duration 20～40min;
C, logical oxygen distribute again, and after the diffusion B step, aerating oxygen 1～4L/min again is with the PCl that does not run out of 5Continue reaction and generate phosphorus:
4PCl5+5O2＝2P2O5+10Cl2↑；
2P2O5+5Si＝5SiO2+4P；
Phosphorus atoms continues diffusion, and temperature is controlled at 830 ℃～900 ℃; Gas flow: big nitrogen 20～35L/min; Stop logical little nitrogen; Oxygen 1～4L/min; Duration 5～15min;
D, with the phosphorus atoms Drive in process that distributes again and combine:
Logical oxygen continues to feed big nitrogen 20～35L/min after distributed process finishes again; Stop logical little nitrogen and oxygen; Duration 8～20min; Temperature is controlled at 830 ℃～900 ℃;
E, process above-mentioned B, C, the diffusion of D step, surperficial square resistance is 28～38 Ω/ after distribution and the Drive in process again.
CNB2008100469663A 2008-02-29 2008-02-29 Improve the method for solar cell diffusion Expired - Fee Related CN100570906C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2008100469663A CN100570906C (en) 2008-02-29 2008-02-29 Improve the method for solar cell diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2008100469663A CN100570906C (en) 2008-02-29 2008-02-29 Improve the method for solar cell diffusion

Publications (2)

Publication Number Publication Date
CN101237010A true CN101237010A (en) 2008-08-06
CN100570906C CN100570906C (en) 2009-12-16

Family

ID=39920463

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2008100469663A Expired - Fee Related CN100570906C (en) 2008-02-29 2008-02-29 Improve the method for solar cell diffusion

Country Status (1)

Country Link
CN (1) CN100570906C (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425549B (en) * 2008-10-13 2010-06-09 浙江弘晨光伏能源有限公司 Crystalline silicon solar cell inactivating and emitter (PN junction) producing technique
CN101834222A (en) * 2009-03-13 2010-09-15 新日光能源科技股份有限公司 Method for manufacturing semiconductor element
CN102097523A (en) * 2010-09-28 2011-06-15 常州天合光能有限公司 Process for diffusing silicon solar cell adopting selective emitter junction realized through double diffusion
CN102097524A (en) * 2010-09-28 2011-06-15 常州天合光能有限公司 Method for diffusing high sheet resistance of solar cells
CN102254991A (en) * 2011-06-30 2011-11-23 浚鑫科技股份有限公司 Crystalline silicon solar cell and diffusion method thereof
WO2011160272A1 (en) * 2010-06-21 2011-12-29 常州天合光能有限公司 Method for manufacturing solar cell with high sheet resistance
CN102403412A (en) * 2011-12-07 2012-04-04 苏州阿特斯阳光电力科技有限公司 Phosphorus diffusion method for like monocrystalline solar cell
CN102593264A (en) * 2012-03-28 2012-07-18 泰通(泰州)工业有限公司 Diffusion process for improving solar battery efficiency
CN102719894A (en) * 2012-05-22 2012-10-10 江苏顺风光电科技有限公司 Phosphorus diffusion technology of solar cell silicon wafer
CN102738305A (en) * 2012-06-27 2012-10-17 英利能源（中国）有限公司 Phosphorus diffusion process for production of crystalline silicon solar cell
CN102760788A (en) * 2011-04-26 2012-10-31 茂迪股份有限公司 Solar cell manufacturing method
CN103066163A (en) * 2013-01-24 2013-04-24 山东力诺太阳能电力股份有限公司 Crystalline silicon solar cell diffusion method
CN103094410A (en) * 2011-11-08 2013-05-08 浚鑫科技股份有限公司 Phosphorous diffusion control method used for solar cell silicon slices
CN103346212A (en) * 2013-06-27 2013-10-09 英利集团有限公司 Phosphorus diffusion method, P-type battery preparation method and N-type battery preparation method
CN103474509A (en) * 2013-09-13 2013-12-25 山西潞安太阳能科技有限责任公司 Crystalline silicon solar cell laser diffusion method
CN103618019A (en) * 2013-08-13 2014-03-05 苏州盛康光伏科技有限公司 Crystalline silica solar cell chip diffusion method
CN104239650A (en) * 2014-10-09 2014-12-24 南昌航空大学 Method for extracting parameters of solar battery on basis of manifest equation
CN104480532A (en) * 2014-12-30 2015-04-01 江西赛维Ldk太阳能高科技有限公司 Texturing preprocessing method of diamond wire cut polycrystalline silicon chip, textured preprocessed silicon chip and application thereof
CN108198771A (en) * 2017-12-28 2018-06-22 苏州阿特斯阳光电力科技有限公司 A kind of flow control methods and volume control device
CN112652678A (en) * 2020-12-09 2021-04-13 晋能清洁能源科技股份公司 Polycrystalline variable-temperature deposition diffusion method and application thereof

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425549B (en) * 2008-10-13 2010-06-09 浙江弘晨光伏能源有限公司 Crystalline silicon solar cell inactivating and emitter (PN junction) producing technique
CN101834222A (en) * 2009-03-13 2010-09-15 新日光能源科技股份有限公司 Method for manufacturing semiconductor element
WO2011160272A1 (en) * 2010-06-21 2011-12-29 常州天合光能有限公司 Method for manufacturing solar cell with high sheet resistance
CN102097524B (en) * 2010-09-28 2012-10-17 常州天合光能有限公司 Method for diffusing high sheet resistance of solar cells
CN102097524A (en) * 2010-09-28 2011-06-15 常州天合光能有限公司 Method for diffusing high sheet resistance of solar cells
CN102097523A (en) * 2010-09-28 2011-06-15 常州天合光能有限公司 Process for diffusing silicon solar cell adopting selective emitter junction realized through double diffusion
CN102760788A (en) * 2011-04-26 2012-10-31 茂迪股份有限公司 Solar cell manufacturing method
CN102254991A (en) * 2011-06-30 2011-11-23 浚鑫科技股份有限公司 Crystalline silicon solar cell and diffusion method thereof
CN103094410B (en) * 2011-11-08 2016-04-13 中建材浚鑫科技股份有限公司 A kind of phosphorus diffusion control method for silicon chip of solar cell
CN103094410A (en) * 2011-11-08 2013-05-08 浚鑫科技股份有限公司 Phosphorous diffusion control method used for solar cell silicon slices
CN102403412A (en) * 2011-12-07 2012-04-04 苏州阿特斯阳光电力科技有限公司 Phosphorus diffusion method for like monocrystalline solar cell
CN102593264A (en) * 2012-03-28 2012-07-18 泰通(泰州)工业有限公司 Diffusion process for improving solar battery efficiency
CN102719894A (en) * 2012-05-22 2012-10-10 江苏顺风光电科技有限公司 Phosphorus diffusion technology of solar cell silicon wafer
CN102738305A (en) * 2012-06-27 2012-10-17 英利能源（中国）有限公司 Phosphorus diffusion process for production of crystalline silicon solar cell
CN103066163A (en) * 2013-01-24 2013-04-24 山东力诺太阳能电力股份有限公司 Crystalline silicon solar cell diffusion method
CN103346212B (en) * 2013-06-27 2015-09-09 英利集团有限公司 A kind of phosphorus diffusion method, P type battery preparation method and N-type cell preparation method
CN103346212A (en) * 2013-06-27 2013-10-09 英利集团有限公司 Phosphorus diffusion method, P-type battery preparation method and N-type battery preparation method
CN103618019A (en) * 2013-08-13 2014-03-05 苏州盛康光伏科技有限公司 Crystalline silica solar cell chip diffusion method
CN103618019B (en) * 2013-08-13 2015-11-25 苏州盛康光伏科技有限公司 A kind of crystal silicon solar cell sheet method of diffusion
CN103474509A (en) * 2013-09-13 2013-12-25 山西潞安太阳能科技有限责任公司 Crystalline silicon solar cell laser diffusion method
CN104239650A (en) * 2014-10-09 2014-12-24 南昌航空大学 Method for extracting parameters of solar battery on basis of manifest equation
CN104239650B (en) * 2014-10-09 2017-08-25 南昌航空大学 One kind extracts solar cell parametric technique based on equation clear
CN104480532A (en) * 2014-12-30 2015-04-01 江西赛维Ldk太阳能高科技有限公司 Texturing preprocessing method of diamond wire cut polycrystalline silicon chip, textured preprocessed silicon chip and application thereof
CN104480532B (en) * 2014-12-30 2017-03-15 江西赛维Ldk太阳能高科技有限公司 A kind of making herbs into wool preprocess method of Buddha's warrior attendant wire cutting polysilicon chip and making herbs into wool pretreatment silicon chip and its application
CN108198771A (en) * 2017-12-28 2018-06-22 苏州阿特斯阳光电力科技有限公司 A kind of flow control methods and volume control device
CN108198771B (en) * 2017-12-28 2020-05-15 苏州阿特斯阳光电力科技有限公司 Flow control method and flow control device
CN112652678A (en) * 2020-12-09 2021-04-13 晋能清洁能源科技股份公司 Polycrystalline variable-temperature deposition diffusion method and application thereof

Also Published As

Publication number Publication date
CN100570906C (en) 2009-12-16

Similar Documents

Publication Publication Date Title
CN100570906C (en) Improve the method for solar cell diffusion
CN109449246B (en) Silicon crystal sheet phosphorus diffusion method
CN102254991B (en) Crystalline silicon solar cell and diffusion method thereof
CN111192935B (en) Back passivation structure of tubular PERC solar cell and preparation method thereof
CN110164759A (en) A kind of regionality stratified sedimentation diffusion technique
CN102437238A (en) Method for boron doping of crystalline silicon solar battery
CN102185012A (en) Method for plating silicon nitride anti-reflecting film
CN109545900A (en) A kind of passivating method of the back surface of solar battery sheet silicon wafer
CN101707226A (en) Diffusion technology of crystalline silicon solar cell
CN115498057A (en) Combined passivation back contact solar cell and preparation method thereof based on laser diffusion
CN102263153A (en) Improved diffusion method of solar cells
US9559221B2 (en) Solar cell production method, and solar cell produced by same production method
CN102130211A (en) Method for improving surface diffusion of solar cell
CN102903785A (en) Method for improving solar cell sheet conversion efficiency by adopting hydrogenation passivation
CN102280373A (en) Diffusion method for preparing emitter of polycrystalline silicon solar battery
CN101707225B (en) Method for improving characteristics of antireflecting film of monocrystalline silicon solar battery
CN112164733A (en) Preparation method of solar cell diffusion deep junction
CN102487100A (en) Diffusion method used for solar cell
CN102683483A (en) Method for removing dead layer of crystalline silicon solar battery
CN103094410B (en) A kind of phosphorus diffusion control method for silicon chip of solar cell
CN110391319B (en) Preparation method of efficient black silicon battery piece with anti-PID effect
CN113571602B (en) Secondary diffusion selective emitter and preparation method and application thereof
CN106784131A (en) Solar battery sheet based on N-type silicon chip and preparation method thereof
CN114843175A (en) N-type doped oxide microcrystalline silicon, heterojunction solar cell and preparation methods of N-type doped oxide microcrystalline silicon and heterojunction solar cell
CN102629647A (en) Manufacture method of solar battery

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091216

Termination date: 20120229