CN101237010A - Method for improving solar battery diffusion - Google Patents

Method for improving solar battery diffusion Download PDF

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Publication number
CN101237010A
CN101237010A CNA2008100469663A CN200810046966A CN101237010A CN 101237010 A CN101237010 A CN 101237010A CN A2008100469663 A CNA2008100469663 A CN A2008100469663A CN 200810046966 A CN200810046966 A CN 200810046966A CN 101237010 A CN101237010 A CN 101237010A
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diffusion
oxygen
phosphorus
nitrogen
duration
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CN100570906C (en
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孙永明
丁孔奇
李树贵
周炜
熊光宇
徐俊
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Jiawei Solar (Wuhan) Co Ltd
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Jiawei Solar (Wuhan) Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The present invention discloses a method for improving the diffusion of a solar cell, comprising the following steps: A. adopting silicon material and P conductive type; B. diffusion: a silicon wafer chemically reacts with oxygen and phosphorus oxychloride at high temperature to produce phosphor, phosphorus pentachloride, phosphorus pentoxide and chlorine; C. feeding oxygen to reallocate: feeding oxygen to continue to react with unexhausted PCl5 to produce phosphorus; D. a phosphor atom Drive in process which is combined with the reallocation; E. the surface block resistance is 28-38 omega after the diffusion, the reallocation and Drive in processes. The method is capable of improving the conversion efficiency of high resistance rate single crystal silicon solar cells, the diffusion of the diffused silicon wafer surface is uniform; the method is easily implemented, the operation is convenient and the cost is low.

Description

Improve the method for solar cell diffusion
Technical field
The invention belongs to monocrystaline silicon solar cell and make the field, more specifically relate to a kind of method of improving the solar cell diffusion, this method is widely used in the manufacture process of monocrystaline silicon solar cell (the especially higher silicon chip of matrix resistivity).
Background technology
The main manufacturing process standardization of single crystal silicon solar cell at present, the key step of its experience is:
1. chemical cleaning and surface structuration are handled (making herbs into wool): making originally by chemical reaction, the silicon chip surface of light forms the pyramid shape structure to strengthen the absorption of light, preferably under the situation, this step can be reduced to the silicon chip surface reflectivity about 10% by 35% in effect;
2. diffusion: this is one of core procedure of solar cell manufacture process, and P type silicon chip becomes the N type in the diffusion rear surface, thereby forms PN junction, and silicon chip just has photovoltaic effect thus.And the concentration of diffusion, the degree of depth and uniformity directly influence the electrical property of battery, weigh with square resistance on the situation macroscopic view of diffusion, and finer understanding need be measured diffusion concentration, the degree of depth etc. by special equipment;
3. peripheral etching: the conductive layer that forms at silicon chip edge when this step is mainly removed diffusion (both positive and negative polarity of battery during the difference of PN junction two ends) with PN junction two terminal shortcircuits, present most of producer all uses plasma etching, equipment still is that technology is all ripe relatively, and etching effect is also fine;
4. deposition antireflective coating: mainly contain two class antireflective coatings at present, silicon nitride (Si 3N 4) and titanium oxide (TiO 2), the stable in properties of silicon nitride own, silicon chip there is good passivation effect, carrying out to follow-up operation is also very beneficial, also better in appearance than titanium oxide, mass effect silicon nitride film preferably can be reduced to surface reflectivity about 4% by making 10% behind the matte again, all adopts plasma-enhanced chemical vapor deposition PECVD (PECVD) (tubular type or flat, the former is in the majority) at present during photovoltaic industry silicon nitride film basically; The manufacturing process of oxidation titanium film is simpler than silicon nitride, and condition enterprise preferably can use MOCVD to deposit, with the control uniformity; It is with low cost using the benefit of oxidation titanium film maximum, but along with the continuous maturation of PECVD film-forming process, titanium oxide is substituted gradually.PECVD also is one of core process;
5. print electrode: this is a kind of being widely adopted, and is with low cost, can be used for the method for large-scale industrial production, and principle is identical with printing word on paper, but the selection that will note printing slurry.Because the silicon chip raw material more and more approaches (being about 200um at present) at present, manual operations is no longer suitable, so various automatic printing equipment is come upon the stage, target is also very clear: simultaneously fragment is controlled at acceptable scope in the raising printing quality;
6. sintering: this is to make the process that forms alloy between the electrode of printing and the silicon chip, the situation of the silicon nitride film of the formation situation of PN junction and PECVD deposition when concrete parameter depends on diffusion;
Early stage solar cell production line adopts the chain type diffusion furnace to cooperate the liquid phosphorus source to spread, but the very big diffusion-condition of production capacity allows of no optimist, battery efficiency is difficult to break through 16%, in recent years along with the maturation of technology, domestic solar cell manufacturing enterprise adopts tubular diffusion furnace to cooperate gaseous state phosphorus source to spread in a large number, diffusion-condition has improvement greatly, adds the use of PECVD, and battery efficiency integral body reaches 16%～17% level.Preamble is narrated, one of core process of producing as solar cell, and the concentration of diffusion, the degree of depth and uniformity directly affect the performance of battery, and comparatively desirable diffusion-condition is: the silicon chip surface doping content is evenly and 5 * 10 19Atom/cm 3Up and down; The concentration of phosphorus atoms is identical in the same degree of depth.Why requiring surface concentration in a scope, is because excessive doping content can make the compound aggravation of surperficial photo-generated carrier, reduces the absorption of battery to light on the contrary.So in actual production, always make more uniform diffusion (exactly because tubular type diffusion obviously is better than its diffusion uniformity of chain type diffusion good) as much as possible.In order to continue to improve battery efficiency aborning, novel batteries such as grooving and grid burying, selective emitting electrode structure, backside point contact structures have appearred again in the industry, but realize that volume production needs huge technology and financial support, be not that all enterprises can both bear, and the manufacturing of high resistivity single crystal silicon solar cell reach high conversion efficiency because the relation of matrix is more difficult.
Summary of the invention
The object of the present invention is to provide a kind of method of improving the solar cell diffusion, this method can promote the conversion efficiency height of high resistivity monocrystaline silicon solar cell, and the silicon chip surface diffusion of diffusion back evenly, and is easy to implement the method, easy and simple to handle, and with low cost.
A kind of method of improving the solar cell diffusion, its technical scheme is:
Be improved to the processing step that distributes again:
Silicon chip preheating (800 ℃～900 ℃)-nitrogen is taken the phosphorus source and is entered and begin diffusion and form N type layer-stop logical phosphorus, begins to feed dried oxygen (830 ℃～900 ℃ of temperature, flow 1～4L/min, time 5～15min, oxygen and the PCl that does not run out of 5Continue reaction and generate phosphorus)-drive in process-process end
A kind of method of improving the solar cell diffusion, its concrete steps are as follows:
A. the silicon chip raw material chooses
Because the difference of silicon chip raw material can be formulated production technology according to the performance of raw material, the Specifeca tion speeification such as the following table of the solar energy level silicon tablet raw material of main flow:
Conduction type The P type
Thickness 200um～220um
Resistivity 0.5～2Ωcm
The silicon chip raw material major parameter that uses is:
Conduction type The P type
Thickness 280um～310um
Resistivity 0.5～10Ωcm
B. diffusion
Silicon chip in high temperature (800-900 ℃) atmosphere with oxygen, phosphorus oxychloride generation chemical reaction generates phosphorus, phosphorus pentachloride, phosphorus pentoxide, chlorine etc., the main chemical reactions equation is as follows:
Si+O2＝SiO2
5POCl3=3PCl5+P2O5 (high temperature)
4PCl5+5O2=2P2O5+10Cl2 ↑ (high temperature)
2P2O5+5Si＝5SiO2+4P
Diffusion gas flow: big nitrogen 20～35L/min; Little nitrogen (carrying the phosphorus source) 1.6～2.5L/min; Oxygen 2.0～3.5L/min; Duration 20～40min;
C. logical oxygen distributes again,
The phosphorus source that the little nitrogen of course of reaction carries is excessive, after the diffusion B step, and aerating oxygen (flow 1～4L/min), the PCl that makes it Yu do not run out of again 5Continue reaction and generate more phosphorus:
4PCl5+5O2＝2P2O5+10Cl2↑
2P2O5+5Si＝5SiO2+4P；
The phosphorus atoms of Sheng Chenging then continues to deep layer diffusion (phosphorus atoms continues diffusion) under the high temperature more before.Temperature is controlled at 830 ℃～900 ℃; Gas flow: big nitrogen 20～35L/min; Stop logical little nitrogen; Oxygen 1～4L/min; Duration 5～15min;
D. with the phosphorus atoms Drive in process that distributes and combine again
Drive in process is the process that foreign atom at high temperature spreads to deep layer, can make the different local doping contents of silicon chip surface become more even.Logical oxygen continues to feed big nitrogen 20～35L/min after distributed process finishes again, stops logical little nitrogen and oxygen, duration 8～20min, and temperature is controlled at 830 ℃～900 ℃;
E, process B, C, D diffusion, surperficial square resistance is 28-38 Ω/ after distribution and the Drive in process again.
The present invention compared with prior art has the following advantages and effect:
On the basis of existing solar cell fabrication process, improve, simple to operate, easy to use, need not to buy any equipment, raw material and time loss are little, but can significantly improve the electrical property of solar cell finished product.
Embodiment:
Example 1: a kind of method of improving the solar cell diffusion property, its step is as follows:
1) adopt raw material:
P type single crystal silicon, thickness 280um～300um, resistivity 0.5～7 Ω cm
2) diffusion
Diffusion temperature: 840 or 850 or 860 or 870 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 2.2L/min, dried oxygen 2.2L/min; Duration: 30min
3) logical oxygen distributes again
Temperature: 840 or 850 or 860 or 870 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 0L/min, dried oxygen 3L/min; Duration: 10min
4)Drive in
Temperature: 840 or 850 or 860 or 870 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 0L/min, dried oxygen 0/min; After the whole process of duration: 10min was finished, not having the silicon chip surface square resistance that distributes again was 35～39 Ω/, and it is 30～34 Ω/ that the silicon chip surface square resistance that distributes is again arranged.
Use the difference of battery on performance of two kinds of different diffusion processes, ask for an interview following table 1-1,1-2
Table 1-1 (not distributing again):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.604 4.98 1.9 0.444 4.27 63 12.79％
2 0.599 4.99 2.12 0.479 4.42 71 14.27％
3 0.598 5.11 2.12 0.476 4.45 69 14.27％
4 0.603 5.11 2.07 0.48 4.32 67 13.93％
5 0.592 4.9 1.78 0.459 3.88 61 11.98％
6 0.591 4.69 2.01 0.475 4.23 73 13.53％
7 0.602 5.09 2.19 0.48 4.57 72 14.74％
8 0.601 5.1 2.24 0.485 4.62 73 15.07％
9 0.602 5.17 2.23 0.478 4.66 72 15.01％
10 0.588 4.71 2.01 0.472 4.26 73 13.53％
11 0.593 4.8 2.09 0.478 4.37 73 14.06％
12 0.605 5.06 2.2 0.485 4.54 72 14.80％
13 0.599 5.13 2.17 0.476 4.55 71 14.60％
14 0.602 5.16 2.22 0.481 4.62 71 14.94％
15 0.599 5.08 2.11 0.475 4.44 69 14.20％
16 0.595 5.04 2.12 0.473 4.49 71 14.27％
17 0.605 5.19 2.3 0.49 4.7 73 15.48％
18 0.601 4.98 2 0.487 4.11 67 13.46％
19 0.596 5.09 2.1 0.477 4.4 69 14.13％
20 0.601 5.12 2.17 0.475 4.57 71 14.60％
21 0.6 5.07 2.15 0.478 4.49 71 14.47％
22 0.578 4.53 1.67 0.46 3.62 64 11.24％
23 0.589 4.97 1.85 0.469 3.94 63 12.45％
24 0.587 4.69 1.94 0.469 4.14 70 13.06％
Mean value 0.597 4.99 2.07 0.475 4.36 70 13.95％
Table 1-2 (have and distribute again and Drive in process):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.599 5.13 2.19 0.48 4.57 71 14.74％
2 0.597 5.16 2.19 0.478 4.59 71 14.74％
3 0.601 5.07 2.21 0.485 4.54 72 14.87％
4 0.601 5.14 2.26 0.485 4.65 73 15.21％
5 0.599 5.1 2.23 0.483 4.61 73 15.01％
6 0.6 5.19 2.26 0.483 4.68 73 15.21％
7 0.599 5.11 2.23 0.482 4.63 73 15.01％
8 0.598 5.12 2.29 0.49 4.68 75 15.41％
9 0.595 5.09 2.14 0.475 4.5 71 14.40％
10 0.599 5.14 2.19 0.478 4.58 71 14.74％
11 0.601 5.12 2.27 0.487 4.66 74 15.28％
12 0.595 5.08 2.12 0.472 4.5 70 14.27％
13 0.6 5.02 2.21 0.484 4.56 73 14.87％
14 0.602 5.17 2.25 0.483 4.65 72 15.14％
15 0.596 5.15 2.19 0.48 4.57 71 14.74％
16 0.598 5.14 2.25 0.483 4.65 73 15.14％
17 0.6 5.06 2.23 0.487 4.58 73 15.01％
18 0.596 5.16 2.17 0.474 4.58 70 14.60％
19 0.599 5.18 2.25 0.482 4.68 73 15.14％
20 0.602 5.14 2.24 0.483 4.64 72 15.07％
21 0.598 5.08 2.19 0.48 4.56 72 14.74％
22 0.601 5.12 2.27 0.488 4.65 74 15.28％
23 0.6 5.04 2.22 0.484 4.59 73 14.94％
24 0.598 5.11 2.24 0.483 4.64 73 15.07％
Mean value 0.599 5.12 2.22 0.482 4.61 72 14.94％
Example 2: a kind of method of improving the solar cell diffusion property, its step is as follows:
1) adopt raw material:
P type single crystal silicon, thickness 280um～300um, resistivity 0.5～7 Ω cm
2) diffusion (change temperature)
Diffusion temperature: 835 or 855 or 865 or 875 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 2.2L/min, dried oxygen 2.2L/min; Duration: 30min
3) logical oxygen distributes again
Temperature: 835 or 855 or 865 or 875 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 0L/min, dried oxygen 3L/min; Duration: 10min
4)Drive in
Temperature: 835 or 855 or 865 or 875 ℃
Gas flow: big nitrogen 25L/min, little nitrogen 0L/min, dried oxygen 0/min; After the whole process of duration: 10min was finished, not having the silicon chip surface square resistance that distributes again was 35～38 Ω/, and it is 31～33 Ω/ that the silicon chip surface square resistance that distributes is again arranged.Ask for an interview following table 2-1,2-2.
Table 2-1 (not distributing again):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.599 5.22 2 0.445 4.5 64 13.46％
2 0.597 5.2 2.03 0.443 4.57 65 13.66％
3 0.596 5.21 2.21 0.472 4.69 71 14.87％
4 0.593 5.19 2.16 0.466 4.63 70 14.54％
5 0.597 5.22 2.19 0.466 4.7 70 14.74％
6 0.595 5.25 2.23 0.471 4.73 71 15.01％
7 0.599 5.29 2.34 0.484 4.84 74 15.75％
8 0.595 5.23 2.22 0.469 4.73 71 14.94％
9 0.601 5.18 2.26 0.479 4.72 73 15.21％
10 0.596 5.18 2.2 0.473 4.66 71 14.80％
11 0.597 5.19 2.14 0.461 4.64 69 14.40％
12 0.594 5.14 2.16 0.469 4.61 71 14.54％
13 0.594 5.18 2.18 0.47 4.65 71 14.67％
14 0.596 5.2 2.3 0.486 4.74 74 15.48％
15 0.598 5.22 2.31 0.483 4.78 74 15.55％
16 0.595 5.17 2.11 0.46 4.58 69 14.20％
17 0.593 5.23 2.26 0.483 4.69 73 15.21％
18 0.598 5.16 2.23 0.482 4.64 72 15.01％
19 0.601 5.2 2.2 0.47 4.68 70 14.80％
20 0.593 5.24 2.25 0.478 4.71 72 15.14％
Mean value 0.596 5.21 2.20 0.471 4.67 71 14.80％
Table 2-2 (have and distribute again and Drive in process):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.602 5.04 2.09 0.482 4.33 69 14.06％
2 0.608 5.19 2.39 0.504 4.74 76 16.08％
3 0.612 5.2 2.43 0.506 4.79 76 16.35％
4 0.605 5.19 2.28 0.494 4.62 73 15.34％
5 0.607 5.15 2.34 0.503 4.65 75 15.75％
6 0.602 4.94 2.24 0.499 4.5 75 15.07％
7 0.608 5.18 2.32 0.495 4.68 74 15.61％
8 0.597 5.08 2.17 0.485 4.48 72 14.60％
9 0.599 4.84 2.18 0.493 4.42 75 14.67％
10 0.607 5.42 2.49 0.501 4.98 76 16.76％
11 0.609 5.26 2.41 0.496 4.85 75 16.22％
12 0.605 5.2 2.29 0.49 4.68 73 15.41％
13 0.596 4.76 2.08 0.491 4.24 73 14.00％
14 0.604 5.13 2.24 0.492 4.56 72 15.07％
15 0.604 5.1 2.32 0.501 4.64 76 15.61％
16 0.603 5.1 2.26 0.492 4.59 73 15.21％
17 0.602 5.02 2.24 0.497 4.51 74 15.07％
18 0.608 5.12 2.31 0.501 4.61 74 15.55％
19 0.606 5.08 2.31 0.497 4.65 75 15.55％
20 0.606 5.19 2.39 0.504 4.74 76 16.08％
Mean value 0.605 5.11 2.29 0.496 4.61 74 15.40％
Example 3: a kind of method of improving the solar cell diffusion property, its step is as follows:
1) adopt raw material:
P type single crystal silicon, thickness 280um～300um, resistivity 0.5～7 Ω cm
2) diffusion (increase big nitrogen, dried oxygen flow reduces little nitrogen flow)
Diffusion temperature: 845 or 855 or 868 or 877 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 1.8L/min, dried oxygen 4L/min; Duration: 30min
3) logical oxygen distribute again (increasing big nitrogen, dried oxygen flow)
Temperature: 845 or 855 or 868 or 877 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 0L/min, dried oxygen 4L/min; Duration: 4min
4) Drive in (increasing big nitrogen flow)
Temperature: 845 or 855 or 868 or 877 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 0L/min, dried oxygen 0/min; After the whole process of duration: 10min was finished, not having the silicon chip surface square resistance that distributes again was 35～39 Ω/, and it is 39～41 Ω/ that the silicon chip surface square resistance that distributes is again arranged.Ask for an interview following table 3-1,3-2.
Table 3-1 (not distributing again):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.591 5.14 2.23 0.478 4.66 73 15.01％
2 0.591 5.01 2.09 0.47 4.45 71 14.06％
3 0.592 5.14 2.22 0.477 4.65 73 14.94％
4 0.596 5.16 2.21 0.476 4.64 72 14.87％
5 0.591 5.08 2.18 0.475 4.58 73 14.67％
6 0.596 5.17 2.28 0.485 4.71 74 15.34％
7 0.592 5.13 2.23 0.479 4.65 73 15.01％
8 0.591 5.17 2.26 0.482 4.69 74 15.21％
9 0.596 5.18 2.28 0.484 4.71 74 15.34％
10 0.588 5.11 2.22 0.48 4.63 74 14.94％
11 0.566 4.4 1.81 0.455 3.97 73 12.18％
12 0.597 5.14 2.25 0.483 4.66 73 15.14％
13 0.593 5.1 2.2 0.477 4.6 73 14.80％
14 0.579 4.88 2.04 0.46 4.44 72 13.73％
15 0.598 5.17 2.26 0.483 4.68 73 15.21％
16 0.595 5.11 2.2 0.482 4.57 73 14.80％
17 0.575 4.78 2 0.461 4.35 73 13.46％
18 0.597 5.18 2.27 0.483 4.71 73 15.28％
19 0.594 5.13 2.22 0.479 4.65 73 14.94％
20 0.594 5.05 2.18 0.479 4.55 73 14.67％
Mean value 0.591 5.06 2.18 0.476 4.58 73 14.68％
Table 3-2 (have and distribute again and Drive in process):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.585 5.12 2.24 0.479 4.67 75 15.07％
2 0.591 5.09 2.25 0.485 4.64 75 15.14％
3 0.591 5.09 2.24 0.483 4.63 74 15.07％
4 0.594 5.14 2.25 0.488 4.61 74 15.14％
5 0.593 5.07 2.23 0.485 4.61 74 15.01％
6 0.601 5.21 2.37 0.495 4.78 76 15.95％
7 0.59 5.03 2.23 0.489 4.56 75 15.01％
8 0.591 5.14 2.24 0.482 4.65 74 15.07％
9 0.59 5.08 2.19 0.489 4.49 73 14.74％
10 0.591 5.05 2.22 0.487 4.57 74 14.94％
11 0.592 5.15 2.22 0.482 4.6 73 14.94％
12 0.594 5.17 2.32 0.495 4.69 76 15.61％
13 0.591 5.12 2.24 0.482 4.64 74 15.07％
14 0.587 5.12 2.22 0.475 4.68 74 14.94％
15 0.597 5.25 2.36 0.489 4.82 75 15.88％
16 0.601 5.08 2.33 0.496 4.7 76 15.68％
17 0.598 5.26 2.34 0.49 4.78 74 15.75％
18 0.591 5.07 2.23 0.484 4.62 75 15.01％
19 0.59 5.06 2.23 0.483 4.61 75 15.01％
20 0.588 5.06 2.16 0.484 4.46 73 14.54％
Mean value 0.592 5.12 2.26 0.486 4.64 74 15.18％
Example 4: a kind of method of improving the solar cell diffusion property, its step is as follows:
1) adopt raw material:
P type single crystal silicon, thickness 280um～300um, resistivity 0.5～7 Ω cm
2) diffusion
Diffusion temperature: 842 or 852 or 862 or 872 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 1.8L/min, dried oxygen 4L/min; Duration: 30min
3) logical oxygen distribute again (changing dried oxygen flow)
Temperature: 842 or 852 or 862 or 872 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 0L/min, dried oxygen 3L/min; Duration: 4min
4)Drive in
Temperature: 842 or 852 or 862 or 872 ℃
Gas flow: big nitrogen 30L/min, little nitrogen 0L/min, dried oxygen 0/min; After the whole process of duration: 10min was finished, not having the silicon chip surface square resistance that distributes again was 40～43 Ω/, and it is 37～41 Ω/ that the silicon chip surface square resistance that distributes is again arranged.Ask for an interview following table 4-1,4-2.
Table 4-1 (not distributing again):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.597 5.06 2.32 0.499 4.65 77 15.61％
2 0.597 5.14 2.3 0.489 4.71 75 15.48％
3 0.596 5.16 2.27 0.483 4.7 74 15.28％
4 0.597 5.18 2.26 0.481 4.7 73 15.21％
5 0.596 5.18 2.26 0.478 4.73 73 15.21％
6 0.595 5.18 2.18 0.469 4.66 71 14.67％
7 0.597 5.12 2.25 0.48 4.69 74 15.14％
8 0.594 5.16 2.25 0.478 4.7 73 15.14％
9 0.593 5.15 2.22 0.475 4.67 73 14.94％
10 0.594 5.11 2.3 0.491 4.68 76 15.48％
11 0.595 5.12 2.16 0.467 4.63 71 14.54％
12 0.579 4.74 1.99 0.461 4.31 72 13.39％
13 0.598 5.15 2.31 0.488 4.74 75 15.55％
14 0.599 5.16 2.29 0.483 4.73 74 15.41％
15 0.583 4.81 2.01 0.46 4.37 72 13.53％
16 0.594 5.15 2.23 0.475 4.71 73 15.01％
17 0.594 5.05 2.21 0.478 4.62 74 14.87％
18 0.598 5.12 1.94 0.442 4.38 63 13.06％
19 0.584 4.76 1.95 0.456 4.28 70 13.12％
20 0.595 5.15 2.21 0.479 4.62 72 14.87％
Mean value 0.594 5.08 2.20 0.476 4.61 73 14.77％
Table 4-2 (have and distribute again and Drive in process):
Numbering Open circuit voltage (volt) Short circuit current (peace) Maximum power (watt) Operating voltage (volt) Operating current (peace) Fill factor, curve factor (%) Conversion efficiency
1 0.593 5.13 2.3 0.491 4.68 76 15.48％
2 0.594 5.11 2.39 0.508 4.7 79 16.08％
3 0.595 5.14 2.32 0.499 4.65 76 15.61％
4 0.594 5.1 2.24 0.483 4.63 74 15.07％
5 0.595 5.14 2.27 0.486 4.68 74 15.28％
6 0.586 4.91 2.16 0.48 4.5 75 14.54％
7 0.596 5.17 2.26 0.481 4.7 73 15.21％
8 0.59 5.15 2.24 0.481 4.65 74 15.07％
9 0.588 4.87 2.14 0.48 4.46 75 14.40％
10 0.586 4.88 2.11 0.479 4.41 74 14.20％
11 0.591 5.08 2.22 0.481 4.62 74 14.94％
12 0.595 5.09 2.3 0.495 4.65 76 15.48％
13 0.594 5.13 2.27 0.484 4.69 75 15.28％
14 0.593 5.12 2.28 0.486 4.69 75 15.34％
15 0.59 5.11 2.24 0.482 4.64 74 15.07％
16 0.6 5.16 2.3 0.488 4.72 74 15.48％
17 0.6 5.13 2.27 0.485 4.69 74 15.28％
18 0.596 5.14 2.32 0.491 4.73 76 15.61％
19 0.597 5.11 2.33 0.502 4.63 76 15.68％
20 0.6 5.18 2.33 0.493 4.72 75 15.68％
Mean value 0.594 5.09 2.26 0.488 4.64 75 15.24％

Claims (1)

1, a kind of method of improving the solar cell diffusion the steps include:
A, employing silicon raw material, conduction type P type, thickness 280um～310um, resistivity 0.5～10 Ω cm;
B, diffusion: silicon chip in 800-900 ℃ of atmosphere with oxygen, phosphorus oxychloride generation chemical reaction generates phosphorus, phosphorus pentachloride, phosphorus pentoxide, chlorine, equation is as follows:
Si+O2＝SiO2；
5POCl3＝3PCl5+P2O5；
4PCl5+5O2＝2P2O5+10Cl2↑；
2P2O5+5Si＝5SiO2+4P；
The diffusion process gas flow:
Big nitrogen 20～35L/min; Little nitrogen 1.6～2.5L/min; Oxygen 2.0～3.5L/min;
Duration 20～40min;
C, logical oxygen distribute again, and after the diffusion B step, aerating oxygen 1～4L/min again is with the PCl that does not run out of 5Continue reaction and generate phosphorus:
4PCl5+5O2＝2P2O5+10Cl2↑；
2P2O5+5Si＝5SiO2+4P；
Phosphorus atoms continues diffusion, and temperature is controlled at 830 ℃～900 ℃; Gas flow: big nitrogen 20～35L/min; Stop logical little nitrogen; Oxygen 1～4L/min; Duration 5～15min;
D, with the phosphorus atoms Drive in process that distributes again and combine:
Logical oxygen continues to feed big nitrogen 20～35L/min after distributed process finishes again; Stop logical little nitrogen and oxygen; Duration 8～20min; Temperature is controlled at 830 ℃～900 ℃;
E, process above-mentioned B, C, the diffusion of D step, surperficial square resistance is 28～38 Ω/ after distribution and the Drive in process again.
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