CN103474509A - Crystalline silicon solar cell laser diffusion method - Google Patents
Crystalline silicon solar cell laser diffusion method Download PDFInfo
- Publication number
- CN103474509A CN103474509A CN2013104154150A CN201310415415A CN103474509A CN 103474509 A CN103474509 A CN 103474509A CN 2013104154150 A CN2013104154150 A CN 2013104154150A CN 201310415415 A CN201310415415 A CN 201310415415A CN 103474509 A CN103474509 A CN 103474509A
- Authority
- CN
- China
- Prior art keywords
- diffusion
- sweep
- flow
- laser
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the field of crystalline silicon solar cell production, in particular to a crystalline silicon solar cell laser diffusion method. Dry silicon wafers are put into a diffusion furnace, a laser light source is in the shape of a rectangle of the size of 300 microns * 600 microns, laser diffusion can be achieved through the two diffusion modes of transverse scanning and vertical scanning, laser diffusion scanning is conducted on crystalline silicon wafers three times under conditions of different-temperature and different-concentration phosphorus oxychloride, oxygen and nitrogen, and therefore cell piece photoelectric conversion efficiency is improved, laser diffusion time is shortened, and production cost is substantially reduced.
Description
Technical field
The present invention relates to the crystal silicon solar energy battery production field, specifically a kind of crystal silicon solar energy battery laser method of diffusion.
Background technology
Solar cell can directly be converted to electric energy by sunlight.The production technology of tradition crystal silicon solar batteries comprises two kinds of uniformity emitter (HE) and selective emitters (SE).The key of uniformity emitter is to diffuse to form the P-N knot by high temperature phosphorous.Selective emitter is to increase the laser diffusion on the basis of uniformity emitter, to form height knot (the P-N knots that the phosphorus diffusion concentration is different).The SE technology is to realize one of high efficiency main method in current crystal silicon solar batteries production technology, SE structure essential characteristic is below electrode and near zone carries out highly doped dark diffusion, in other low-doped shallow diffusions in zone, so just, form a laterally height knot, the structure of this excellence can improve the open circuit voltage Voc of solar cell, short circuit current Isc and fill factor, curve factor F.F., thus make battery obtain higher photoelectric conversion efficiency.The low-doped shallow diffusion in zone between electrode, can reduce the bluk recombination probability of minority carrier, and can carry out surface passivation preferably, reduce the surface recombination probability of minority carrier, thereby reduce the reverse saturation current of battery, improve open circuit voltage Voc and the short circuit current Isc of battery.On the other hand, the closer to the surface of solar cell, the generation rate of photo-generated carrier is higher, and higher the closer to the collection rate of diffusion junctions photo-generated carrier, therefore shallow diffused junction can obtain in the zone of high carrier generation rate high collection rate, improve the short circuit current Isc of battery.The highly doped dark diffusion of electrode lower zone can form ohmic contact, and this regional volume resistance is less, thereby reduces the series resistance of solar cell, improves the fill factor, curve factor F.F. of battery.The dark diffusion of impurity can deepen to strengthen horizontal n+/p knot, and laterally n+/p ties and just ties the collection rate that can improve photo-generated carrier at the horizontal n+/n of light doping section and the formation of heavily doped region intersection, thereby improves the short circuit current Isc of battery.In addition, dark knot can prevent that electrode metal from permeating to interface, reduces electrode metal and introduce the probability of impurity energy level in forbidden band.Yet selective emitter is also not obvious to the lifting of cell piece photoelectric conversion efficiency.
Summary of the invention
Technical problem to be solved by this invention is: how to provide a kind of laser diffusion technology, to improve the photoelectric conversion efficiency of crystal-silicon battery slice.
The technical solution adopted in the present invention is: a kind of crystal silicon solar energy battery laser method of diffusion, carry out as follows:
Step 1, dry silicon chip is put into to diffusion furnace, LASER Light Source is rectangle 300 μ m * 600 μ m, and the laser diffusion comprises transversal scanning and two kinds of diffusion ways of vertical scanning, passes into nitrogen protection, the diffusion furnace temperature is elevated to 786 ℃, pass into phosphorus oxychloride, oxygen, nitrogen and spread for the first time, keep phosphorus oxychloride flow 1500 ml/min, oxygen flow 300 ml/min, nitrogen flow 7 L/min, 13 minutes diffusion times;
Step 2, be elevated to 826 ℃-838 ℃ by temperature, keeps phosphorus oxychloride flow 1500 ml/min, oxygen flow 2900 ml/min, and nitrogen flow 5 L/min, spread for the second time, 10 minutes diffusion times;
Step 3, remain on 820 ℃ by temperature, keeps phosphorus oxychloride flow 2000 ml/min, oxygen flow 2900 ml/min, and nitrogen flow 4 L/min, spread for the third time, 10 minutes diffusion times.
As a kind of optimal way: in each diffusion process, LASER Light Source vertical direction single sweep operation length is 156 mm, continuous sweep 9 times, 1-3 sweep spacing is 100mm, 3-4 sweep spacing is 52 mm, 4-6 sweep spacing is 100mm, and 6-7 sweep spacing is 52 mm, and 7-9 sweep spacing is 100mm.Laser light source horizontal scanning direction single sweep operation length is 156 mm, continuous sweep 45 times, and sweep span is 10-100 mm.
The invention has the beneficial effects as follows: the present invention is in conjunction with the advantage of traditional crystal silicon battery selective emitter and uniformity emitter technique, the present invention is when improving the cell piece photoelectric conversion efficiency, reduce the time of laser diffusion, thereby significantly reduced production cost.
Embodiment
Choose at random totally 200 of polysilicon chips, carry out drying and process, the silicon chip that drying is crossed is put into diffusion furnace, passes into nitrogen protection.First step diffusion: furnace body temperature is elevated to 786 ℃, stablizes phosphorus oxychloride flow 1500 ml/min, 13 minutes diffusion times, oxygen flow 300 ml/min, nitrogen flow 7 L/min.3. second step diffusion: increase the temperature to 830 ℃, keep the phosphorus oxychloride flow constant, oxygen flow 2900 ml/min, nitrogen flow 5 L/min, spread 10 minutes.4. the 3rd step diffusion: the phosphorus oxychloride flow is brought up to 2000 ml/min, oxygen flow 2900 ml/min, nitrogen flow 4 L/min, 10 minutes diffusion times, keep 820 ℃ of temperature.
LASER Light Source is rectangle 300 μ m * 600 μ m, and the laser diffusion comprises transversal scanning (horizontal sweep) and vertical scanning (vertical sweep) two kinds of diffusion ways.The laser width of transversal scanning is 300 μ m, and single sweep operation length is 156 mm, continuous sweep 45 times, and sweep span is 10-100 mm.Vertical scanning width is 600 μ m, and single sweep operation length is 156 mm, continuous sweep 9 times, 1-3 vertical sweep spacing is 100mm, and 3-4 sweep spacing is 52 mm, and 4-6 sweep spacing is 100mm, 6-7 sweep spacing is 52 mm, and 7-9 sweep spacing is 100mm.
Claims (2)
1. a crystal silicon solar energy battery laser method of diffusion is characterized in that carrying out as follows:
Step 1, dry silicon chip is put into to diffusion furnace, LASER Light Source is rectangle 300 μ m * 600 μ m, and the laser diffusion comprises transversal scanning and two kinds of diffusion ways of vertical scanning, passes into nitrogen protection, the diffusion furnace temperature is elevated to 786 ℃, pass into phosphorus oxychloride, oxygen, nitrogen and spread for the first time, keep phosphorus oxychloride flow 1500 ml/min, oxygen flow 300 ml/min, nitrogen flow 7 L/min, 13 minutes diffusion times;
Step 2, be elevated to 826 ℃-838 ℃ by temperature, keeps phosphorus oxychloride flow 1500 ml/min, oxygen flow 2900 ml/min, and nitrogen flow 5 L/min, spread for the second time, 10 minutes diffusion times;
Step 3, remain on 820 ℃ by temperature, keeps phosphorus oxychloride flow 2000 ml/min, oxygen flow 2900 ml/min, and nitrogen flow 4 L/min, spread for the third time, 10 minutes diffusion times.
2. a kind of crystal silicon solar energy battery laser method of diffusion according to claim 1, it is characterized in that: in each diffusion process, LASER Light Source vertical direction single sweep operation length is 156 mm, continuous sweep 9 times, 1-3 sweep spacing is 100mm, 3-4 sweep spacing is 52 mm, 4-6 sweep spacing is 100mm, 6-7 sweep spacing is 52 mm, 7-9 sweep spacing is 100mm, laser light source horizontal scanning direction single sweep operation length is 156 mm, continuous sweep 45 times, and sweep span is 10-100 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310415415.0A CN103474509B (en) | 2013-09-13 | 2013-09-13 | A kind of crystal silicon solar energy battery laser diffusion method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310415415.0A CN103474509B (en) | 2013-09-13 | 2013-09-13 | A kind of crystal silicon solar energy battery laser diffusion method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103474509A true CN103474509A (en) | 2013-12-25 |
| CN103474509B CN103474509B (en) | 2015-08-05 |
Family
ID=49799290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310415415.0A Active CN103474509B (en) | 2013-09-13 | 2013-09-13 | A kind of crystal silicon solar energy battery laser diffusion method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103474509B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393107A (en) * | 2014-10-27 | 2015-03-04 | 中国电子科技集团公司第四十八研究所 | High-sheet resistance crystalline silicon cell low-voltage diffusion process |
| CN107093551A (en) * | 2017-04-28 | 2017-08-25 | 苏州阿特斯阳光电力科技有限公司 | A kind of method of diffusion of solar battery sheet and obtained solar battery sheet |
| CN111649807A (en) * | 2020-05-21 | 2020-09-11 | 山西潞安太阳能科技有限责任公司 | Method for detecting whether tubular PECVD mass flowmeter is normal |
| CN114447140A (en) * | 2020-10-30 | 2022-05-06 | 山西潞安太阳能科技有限责任公司 | Diffusion process of single crystal solar cell |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237010A (en) * | 2008-02-29 | 2008-08-06 | 珈伟太阳能(武汉)有限公司 | Method for improving solar battery diffusion |
| CN101419997A (en) * | 2008-11-28 | 2009-04-29 | 宁波尤利卡太阳能科技发展有限公司 | Producing method for crystalline silicon solar cell PN junction |
| CN101667605A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chip |
| CN101916799A (en) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN102157606A (en) * | 2010-12-30 | 2011-08-17 | 光为绿色新能源有限公司 | Diffusion method used for crystalline silicon solar battery |
| CN102347222A (en) * | 2011-08-12 | 2012-02-08 | 无锡尚品太阳能电力科技有限公司 | Phosphorous diffusion technology for polysilicon sheet |
| CN102593262A (en) * | 2012-03-14 | 2012-07-18 | 苏州阿特斯阳光电力科技有限公司 | Diffusion method for solace cell with polycrystalline silicon selective emitter |
| CN102694070A (en) * | 2012-05-30 | 2012-09-26 | 浚鑫科技股份有限公司 | Method for manufacturing PN junction of solar battery |
| CN103094419A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Preparation method of high-efficiency solar cell |
-
2013
- 2013-09-13 CN CN201310415415.0A patent/CN103474509B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237010A (en) * | 2008-02-29 | 2008-08-06 | 珈伟太阳能(武汉)有限公司 | Method for improving solar battery diffusion |
| CN101419997A (en) * | 2008-11-28 | 2009-04-29 | 宁波尤利卡太阳能科技发展有限公司 | Producing method for crystalline silicon solar cell PN junction |
| CN101667605A (en) * | 2009-09-03 | 2010-03-10 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chip |
| CN101916799A (en) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing crystalline silicon solar cell selective emitter junction |
| CN102157606A (en) * | 2010-12-30 | 2011-08-17 | 光为绿色新能源有限公司 | Diffusion method used for crystalline silicon solar battery |
| CN102347222A (en) * | 2011-08-12 | 2012-02-08 | 无锡尚品太阳能电力科技有限公司 | Phosphorous diffusion technology for polysilicon sheet |
| CN102593262A (en) * | 2012-03-14 | 2012-07-18 | 苏州阿特斯阳光电力科技有限公司 | Diffusion method for solace cell with polycrystalline silicon selective emitter |
| CN102694070A (en) * | 2012-05-30 | 2012-09-26 | 浚鑫科技股份有限公司 | Method for manufacturing PN junction of solar battery |
| CN103094419A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Preparation method of high-efficiency solar cell |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393107A (en) * | 2014-10-27 | 2015-03-04 | 中国电子科技集团公司第四十八研究所 | High-sheet resistance crystalline silicon cell low-voltage diffusion process |
| CN107093551A (en) * | 2017-04-28 | 2017-08-25 | 苏州阿特斯阳光电力科技有限公司 | A kind of method of diffusion of solar battery sheet and obtained solar battery sheet |
| CN107093551B (en) * | 2017-04-28 | 2020-02-14 | 苏州阿特斯阳光电力科技有限公司 | Diffusion method of solar cell and obtained solar cell |
| CN111649807A (en) * | 2020-05-21 | 2020-09-11 | 山西潞安太阳能科技有限责任公司 | Method for detecting whether tubular PECVD mass flowmeter is normal |
| CN111649807B (en) * | 2020-05-21 | 2022-07-29 | 山西潞安太阳能科技有限责任公司 | Method for detecting whether tubular PECVD mass flowmeter is normal or not |
| CN114447140A (en) * | 2020-10-30 | 2022-05-06 | 山西潞安太阳能科技有限责任公司 | Diffusion process of single crystal solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103474509B (en) | 2015-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101937940B (en) | Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method | |
| CN103474509B (en) | A kind of crystal silicon solar energy battery laser diffusion method | |
| CN106531816A (en) | Back-junction back-contact solar cell | |
| CN106711239A (en) | Preparation method of PERC solar battery and PERC solar battery | |
| CN102842646A (en) | Preparation method of interdigitated back-contact battery based on N-type substrate | |
| CN105280484A (en) | Diffusion technique of crystal-silicon efficient high-sheet-resistance battery piece | |
| CN102005501A (en) | Phosphorous diffusion method for producing solar cell | |
| KR102657230B1 (en) | Solar cell and manufacturing method thereof | |
| CN103208556A (en) | Solar cell manufacturing method and solar cell | |
| CN102637778A (en) | PN junction diffusion method | |
| CN102097523A (en) | Process for diffusing silicon solar cell adopting selective emitter junction realized through double diffusion | |
| CN101431117A (en) | Multi-junction solar cell with doping blocking layer | |
| CN111106188A (en) | N-type battery, preparation method of selective emitter of N-type battery and N-type battery | |
| CN203013281U (en) | Silicon carbide horizontal schottky junction type mini-sized nuclear battery | |
| TWI623110B (en) | Solar cell with delta doping layer | |
| CN102738263B (en) | Doping unit, doping wafer, doping method, battery and manufacturing method | |
| CN204315591U (en) | A kind of selective emitter crystal silicon solar batteries | |
| CN103227244B (en) | N-type solaode and selectivity back surface field preparation method thereof | |
| KR101115195B1 (en) | Silicon heterojunction solar cell and method for fabricating the same | |
| Ryu et al. | High efficiency n-type solar cells with screen-printed boron emitters and ion-implanted back surface field | |
| CN102738264B (en) | Doping unit, doping wafer, doping method, solar battery and manufacturing method | |
| CN102881737A (en) | Body-to-back contact solar cell | |
| KR101406339B1 (en) | Method for preparing selective emitter layer, selective emitter layer prepared by the same, and silicone solar-cell comprising the same | |
| CN102738265A (en) | Doping unit, doping wafer, doping method, solar battery and manufacturing method | |
| CN103618032A (en) | Preparation method for high open-circuit voltage polycrystalline solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |