CN108198771A - A kind of flow control methods and volume control device - Google Patents
A kind of flow control methods and volume control device Download PDFInfo
- Publication number
- CN108198771A CN108198771A CN201711456622.5A CN201711456622A CN108198771A CN 108198771 A CN108198771 A CN 108198771A CN 201711456622 A CN201711456622 A CN 201711456622A CN 108198771 A CN108198771 A CN 108198771A
- Authority
- CN
- China
- Prior art keywords
- diffusion
- diffusion technique
- small nitrogen
- flow value
- technique
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 361
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 482
- 238000009792 diffusion process Methods 0.000 claims abstract description 462
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 241
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- 239000007788 liquid Substances 0.000 claims description 36
- 238000003860 storage Methods 0.000 claims description 32
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000011112 process operation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 201000004792 malaria Diseases 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of flow control methods and volume control device, which includes：Obtain the operation ordinal number of current diffusion technique in diffusion furnace；According to the correspondence of the small nitrogen flow value of the operation ordinal sum of diffusion technique and the operation ordinal number of current diffusion technique, obtain currently performing the required small nitrogen flow value of diffusion technique；The required small nitrogen flow value of diffusion technique is performed according to current, small nitrogen is inputted to diffusion furnace.Flow control methods provided in an embodiment of the present invention do not need to carry out manual adjustment, be conducive to automated production, solves the small nitrogen for being passed through constant flow rate into diffusion furnace in the prior art, temperature is promoted to adjust sheet resistance by adjusting again, the silicon chip sheet resistance fluctuation for increasing human cost but obtaining is big, between batch the problem of silicon chip sheet resistance lack of homogeneity, realize and save human cost, the purpose that silicon chip sheet resistance value has good uniformity between batch.
Description
Technical field
The present embodiments relate to flow control technique more particularly to a kind of flow control methods and volume control device.
Background technology
At present, solar energy is rapidly developed as a kind of sustainable green energy resource for substituting fossil imitation frosted glass.Solar-electricity
PN junction must be prepared in the preparation process of pond, thermal diffusion method is most widely used knot mode processed, and uniform doping directly affects
The efficiency of solar cell.For promoted efficiency of solar cell, high square resistance (sheet resistance) as current diffusion technique developing direction,
This proposes requirements at the higher level to diffusion uniformity.
Existing diffusion technique generally carries liquid source using inert gas and silicon chip is adulterated, and diffusion process includes active expansion
Scattered and forward step when active method of diffusion is warming up to technological temperature for diffusion quartz tube, is set, when fixed according to technique
It is interior to be passed through fixed big nitrogen, small nitrogen and oxygen flow, then reached by adjusting time or the temperature of diffusion or forward step
To the sheet resistance value of demand.
However, the sheet resistance value uniformity obtained between batch in existing diffusion way is poor, needing, which increases manpower, constantly adjusts
Whole diffusion or time or the temperature of forward step, to obtain the preferable sheet resistance value of uniformity between batch, increase human cost,
And above-mentioned method of adjustment increase the changes of diffusion conditions because, be unfavorable for the stabilization of technique, obtained silicon chip sheet resistance value fluctuation compared with
Greatly.
Invention content
The present invention provides a kind of flow control methods and volume control device, to realize saving human cost, silicon between batch
The purpose that piece sheet resistance has good uniformity.
In a first aspect, an embodiment of the present invention provides a kind of flow control methods, including：
Obtain the operation ordinal number of current diffusion technique in diffusion furnace；
According to the correspondence of the small nitrogen flow value of the operation ordinal sum of diffusion technique and the fortune of the current diffusion technique
Row ordinal number is currently performed the required small nitrogen flow value of the diffusion technique；
The required small nitrogen flow value of the diffusion technique is currently performed according to described, small nitrogen is inputted to the diffusion furnace.
Optionally, the flow control methods, further include：
After replacing liquid state diffusion source storage tank, since 0, One Diffusion Process technique, diffusion technique number of run have often been run
Add 1；
The operation ordinal number of current diffusion technique in the acquisition diffusion furnace, including：
Obtain total operation time of diffusion technique in the period stopped from being replaced liquid state diffusion source storage tank to current time
Number；
Total number of run of the diffusion technique is added into the 1 operation ordinal number as current diffusion technique.
Optionally, the correspondence of the small nitrogen flow value of the operation ordinal sum according to diffusion technique and the current expansion
The operation ordinal number of day labor skill before currently being performed the required small nitrogen flow value of the diffusion technique, further includes：
Build the correspondence of the small nitrogen flow value of operation ordinal sum of diffusion technique.
Optionally, the correspondence of the small nitrogen flow value of operation ordinal sum of the structure diffusion technique, including：
After replacing liquid state diffusion source storage tank, the sheet resistance of the silicon chip after each secondary diffusion technique is measured；
If the sheet resistance of the silicon chip is except the first given threshold range after the M times diffusion technique, judgement is by the M times
Silicon chip sheet resistance is drifted about after diffusion technique；
Small nitrogen flow value required to the M times diffusion technique is modified, and the revised small nitrogen flow value is made
To perform the required small nitrogen flow value of the M times diffusion technique；
Wherein, M is positive integer.
Optionally, the small nitrogen flow value required to the M times diffusion technique is modified, will be revised described small
Nitrogen flow value, which is used as, performs the required small nitrogen flow value of the M times diffusion technique, including：
It inputs the small nitrogen of multiple and different flow values respectively to the diffusion furnace, is diffused process test；
If the sheet resistance of the silicon chip by the test of the M1 times diffusion technique within the scope of the second given threshold, will carry out the
It is required as the M times diffusion technique is performed to the small nitrogen flow value that the diffusion furnace inputs during M1 diffusion technique test
Small nitrogen flow value；
Wherein, M1 is positive integer.
Optionally, the correspondence of the small nitrogen flow value of operation ordinal sum of the structure diffusion technique, further includes：
If the adjacent sheet resistance of silicon chip twice drift betides N1After secondary diffusion technique and N2After secondary diffusion technique；
Then perform the required small nitrogen flow value B of n-th diffusion techniqueNFor
Wherein, BN2To perform N2The secondary required small nitrogen flow value of diffusion technique, BN1To perform N1Secondary diffusion technique
Required small nitrogen flow value；N、N1And N2It is positive integer, and N1＜ N ＜ N2。
Optionally, the correspondence of the small nitrogen flow value of operation ordinal sum of the structure diffusion technique, further includes：
After replacing liquid state diffusion source storage tank, if the drift of first time silicon chip sheet resistance betides N3After secondary diffusion technique；
Then perform the required small nitrogen flow value B of the secondary diffusion techniques of N 'N’For
Wherein, BN3To perform N3The secondary required small nitrogen flow value of diffusion technique, B1To perform the 1st diffusion technique institute
The small nitrogen flow value needed；N ' and N3It is positive integer, and 1 ＜ N ' ＜ N3≤N1。
Optionally, the diffusion source is phosphorus oxychloride or Boron tribromide.
Second aspect, the embodiment of the present invention additionally provide a kind of volume control device, including：
Ordinal number acquisition module is run, is connected with board control module, for obtaining the fortune of current diffusion technique in diffusion furnace
Row ordinal number；
Flow determining module is connected with the operation ordinal number acquisition module, for the operation ordinal sum according to diffusion technique
The operation ordinal number of the correspondence of small nitrogen flow value and the current diffusion technique is currently performed the diffusion technique institute
The small nitrogen flow value needed；
Board control module is connected with the flow determining module, for currently performing the diffusion technique according to described
Required small nitrogen flow value inputs small nitrogen to the diffusion furnace.
Optionally, the operation ordinal number acquisition module includes：
Counter after replacing liquid state diffusion source storage tank, since diffusion technique number of run 0, has often run one
Secondary diffusion technique, diffusion technique number of run add 1；
The operation ordinal number acquisition module is specifically used for：
Obtain total operation time of diffusion technique in the period stopped from being replaced liquid state diffusion source storage tank to current time
Number；
Total number of run of the diffusion technique is added into the 1 operation ordinal number as current diffusion technique.
The flow control methods and volume control device that the embodiment of the present invention proposes, are currently spread by obtaining in diffusion furnace
The operation ordinal number of technique；And the correspondence according to the small nitrogen flow value of operation ordinal sum of diffusion technique and the current diffusion
The operation ordinal number of technique is currently performed the required small nitrogen flow value of the diffusion technique；According to the current execution institute
The required small nitrogen flow value of diffusion technique is stated, small nitrogen is inputted to the diffusion furnace, does not need to carry out manual adjustment, according to diffusion
The small nitrogen of small nitrogen flow value needed for process operation ordinal number to diffusion furnace input, it is smaller with the silicon chip sheet resistance value fluctuation that this makes,
Silicon chip sheet resistance uniformity is good between batch, is conducive to automated production, solves and be passed through steady flow into diffusion furnace in the prior art
The small nitrogen of amount, then by adjusting diffusion or temperature is promoted to adjust sheet resistance, the silicon chip sheet resistance for increasing human cost but obtaining fluctuates greatly,
Between batch the problem of silicon chip sheet resistance lack of homogeneity, in the case that silicon chip sheet resistance has good uniformity between batch is ensured, manpower is saved
Cost.
Description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than entire infrastructure are illustrated only in description, attached drawing.
Fig. 1 is a kind of structure diagram of volume control device of the prior art；
Fig. 2 is a kind of flow chart for flow control methods that the embodiment of the present invention one provides；
Fig. 3 is a kind of flow chart of flow control methods provided by Embodiment 2 of the present invention；
Fig. 4 is a kind of structure diagram for volume control device that the embodiment of the present invention three provides；
Fig. 5 is a kind of operation ordinal number and the relational graph of silicon chip sheet resistance that the embodiment of the present invention three provides.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than entire infrastructure are illustrated only in description, attached drawing.
Fig. 1 is a kind of structure diagram of volume control device of the prior art.Referring to Fig. 1, existing diffusion technique
In, by being passed through fixed small nitrogen flow into diffusion furnace 1, the time is promoted by adjusting or promotes sheet resistance value of the temperature to silicon chip
It is adjusted.But present inventor is by the study found that when small nitrogen flow value is identical, spreading the liquid level of source storage tank
The molar content in diffusion source that the small nitrogen in diffusion furnace carries can be influenced to be passed through, therefore expanded in the prior art into diffusion furnace
The molar content in scattered diffusion source can generate variation with the liquid level of diffusion source storage tank, cause after completing diffusion technique
Fluctuated between the sheet resistance value batch of obtained silicon chip it is larger, and usually by subsequent adjustment promote temperature or time other side's resistance value into
Row adjustment, labor intensive resource, but obtained silicon chip sheet resistance uniformity is still poor.In order to solve this problem, it is of the invention
Embodiment proposes a kind of flow control methods and volume control device, to obtain the good silicon chip sheet resistance of uniformity between batch.
Embodiment one
Fig. 2 is a kind of flow chart for flow control methods that the embodiment of the present invention one provides.Referring to Fig. 2, the present invention is implemented
The flow control methods that example provides, including：
S10：Obtain the operation ordinal number of current diffusion technique in diffusion furnace.
Current diffusion technique refers to the technique that ongoing diffusion source is diffused in diffusion furnace, the expansion of each run
The corresponding operation ordinal number of day labor skill, i.e. the sequence label of its operation.Illustratively, n-th diffusion technique is currently running,
Then the operation ordinal number of current diffusion technique is N.
S20：According to the correspondence of the small nitrogen flow value of the operation ordinal sum of diffusion technique and the fortune of current diffusion technique
Row ordinal number is currently performed the required small nitrogen flow value of the diffusion technique.
It should be noted that when it is liquid state diffusion source to spread source, in technical process is diffused, need to lead in small nitrogen
Enter in diffusion source, so that the diffusion source that small nitrogen can carry out certain molar content is diffused technique.In order to make to be taken in small nitrogen
The diffusion source molar content of band maintains a stable range, needs to adjust small nitrogen flow according to the operation ordinal number of diffusion technique
It is worth to the small nitrogen flow value needed for current diffusion technique.
The factors such as the liquid level of diffusion source storage tank and small nitrogen flow value can influence the diffusion source carried in small nitrogen
Molar content.In each diffusion technique operational process, the small nitrogen in the storage tank of input diffusion source can carry out a part of diffusion source,
When operation diffusion technique number is less, the sheet resistance influence that silicon chip is obtained on each diffusion technique is not obvious, but when fortune
When capable diffusion technique number is excessive, the liquid level of diffusion source storage tank can change therewith, so as to influence to obtain silicon chip
Sheet resistance value, but it is larger to adjust the sheet resistance fluctuation that small nitrogen flow is worth to according to the liquid level of diffusion source storage tank.When
When silicon chip sheet resistance difference is larger, it can substantially reduce follow-up sintering process window, and when silicon chip sheet resistance difference is excessive, the silicon chip
Reworked processing can be carried out, wastes material and cost.
Therefore, in order to ensure obtaining the uniformity of the sheet resistance of silicon chip between diffusion technique batch, expand sintering circuit window, drop
Low material waste and rework cost adjust small nitrogen flow value to corresponding with its operation process ordinal number when running each diffusion technique
Small nitrogen flow value so that the diffusion source molar content that the small nitrogen in diffusion technique in input diffusion furnace carries every time is substantially not
Become.
General common diffusion source can be the compound of boron, phosphorus, antimony or arsenic, can when it is liquid state diffusion source to spread source
Choosing, diffusion source can be phosphorus oxychloride or Boron tribromide.
S30：According to the current execution required small nitrogen flow value of diffusion technique, small nitrogen is inputted to diffusion furnace.
It is understood that can first be inputted in diffusion source before small nitrogen addition diffusion furnace, participated in carry out diffusion source
Diffusion reaction, therefore, small nitrogen flow value corresponding with diffusion technique operation ordinal number can be the small nitrogen directly inputted in diffusion furnace
Before flow value or input diffusion furnace, the small nitrogen flow value that is first input into diffusion source.Small nitrogen in input diffusion source
When the flow value variation behind diffusion source is little, the small nitrogen flow of the small nitrogen flow value and input diffusion furnace in input diffusion source
Value can be considered as same small nitrogen flow value.
The flow control methods that the embodiment of the present invention proposes, by the operation sequence for obtaining current diffusion technique in diffusion furnace
Number；And according to the correspondence of the small nitrogen flow value of operation ordinal sum of diffusion technique and the operation ordinal number of current diffusion technique,
It obtains currently performing the required small nitrogen flow value of diffusion technique；The required small nitrogen flow of diffusion technique is performed according to current
Value inputs small nitrogen to diffusion furnace.It does not need to carry out manual adjustment in the embodiment of the present invention, is conducive to automated production, according to expansion
Dissipate the small nitrogen of small nitrogen flow value needed for process operation ordinal number to diffusion furnace input, the diffusion carried in small nitrogen in each secondary diffusion technique
Source molar content is basically unchanged, so as to get the sheet resistance value fluctuation of ground silicon chip is smaller, and sheet resistance uniformity is good between batch, solves existing
The small nitrogen of constant flow rate is passed through in technology into diffusion furnace, then by adjusting diffusion or temperature being promoted to adjust sheet resistance, increases manpower
Cost but the sheet resistance of obtained silicon chip fluctuate greatly, between batch the problem of sheet resistance lack of homogeneity, realize and save human cost, between batch
The purpose that silicon chip sheet resistance has good uniformity.
Since the number of process operation in diffusion furnace is not limited, process operation ordinal number can continue to increase, in order to keep away
Exempt from the problems such as operation ordinal number goes wrong caused by possibility due to the operation ordinal number of diffusion technique is excessive to occur, illustratively,
On the basis of said program, which can also include：After replacing liquid state diffusion source storage tank, since 0, often transport
One Diffusion Process technique is gone, diffusion technique number of run adds 1.
Since the diffusion technique number that a liquid state diffusion source storage tank can carry out is essentially identical, diffusion technique operation sequence
Number is finite value, is no longer no maximum superposition always, it is possible to reduce the probability of record operation process number error ensures diffusion work
The accuracy of the number of run of skill.
Then S10：The operation ordinal number of current diffusion technique in diffusion furnace is obtained, can be included：
First, total fortune of diffusion technique in the period stopped from being replaced liquid state diffusion source storage tank to current time is obtained
Places number.
Secondly, total number of run of the diffusion technique is added into the 1 operation ordinal number as current diffusion technique.
It is understood that obtaining the method for the operation ordinal number of current diffusion technique and being not specifically limited, can also lead to
It crosses other modes and obtains the operation ordinal number of accurately current diffusion technique.
Embodiment two
The present embodiment is a specific example in embodiment one.Fig. 3 is a kind of flow provided by Embodiment 2 of the present invention
The flow chart of control method.Illustratively, referring to Fig. 3, on the basis of above-described embodiment, which can wrap
It includes：
S10：Obtain the operation ordinal number of current diffusion technique in diffusion furnace.
S21：Build the correspondence of the small nitrogen flow value of operation ordinal sum of diffusion technique.
There are many this step concrete methods of realizing, is described in detail below with regard to typical case, but does not form to the application
Limitation.
First, after replacing liquid state diffusion source storage tank, the sheet resistance of the silicon chip after each secondary diffusion technique is measured.
Wherein, silicon chip sheet resistance is the average sheet resistance of multiple silicon chip sheet resistances that each secondary diffusion technique obtains.Due in diffusion furnace
The factors such as the temperature of middle each region not exclusively, therefore, in diffusion furnace after the completion of same primary complete process operation, obtain
Silicon chip sheet resistance between be also there are certain differences.In order to determine the sheet resistance value of same batch silicon chip, can take it is several not
With the silicon chip in region, corresponding sheet resistance is obtained by measuring, the obtained average value of several silicon chip sheet resistances is defined as this diffusion
The sheet resistance of silicon chip obtained after the completion of technique.
Secondly, if the sheet resistance of silicon chip is except the first given threshold range after the M times diffusion technique, judgement is by M
Silicon chip sheet resistance is drifted about after secondary diffusion technique, wherein, M is positive integer.
Illustratively, a target sheet resistance can be set, which is estimated obtained best sheet resistance value.It can be with
A first given threshold range is set, the first given threshold range can be set according to actual needs, first setting
Threshold range can be sheet resistance acceptable fluctuation range near target sheet resistance, for example, the first given threshold model can be set
Enclose be target side resistance value float up and down 10% sheet resistance range.
The sheet resistance value of silicon chip every time after diffusion technique is measured, when silicon chip sheet resistance value is in the first given threshold
Within the scope of when, it is estimated silicon chip sheet resistance to illustrate silicon chip sheet resistance, and sheet resistance is not drifted about, and silicon chip is qualified, obtained silicon chip
It does not need to do over again, subsequent technique processing can be continued.When sheet resistance is not drifted about, this time can be spread work
The small nitrogen flow value of skill input is determined as the secondary diffusion technique and runs the corresponding small nitrogen flow value of ordinal number.
When silicon chip sheet resistance is when except the first given threshold range, illustrate that the silicon chip sheet resistance obtained after the secondary diffusion technique is sent out
Drift has been given birth to, has deviateed acceptable sheet resistance range, is i.e. silicon chip is unqualified, and the silicon chip that this diffusion technique obtains cannot participate in subsequently
Technique processing.
Finally, small nitrogen flow value required to the M times diffusion technique is modified, and revised small nitrogen flow value is made
To perform the required small nitrogen flow value of the M times diffusion technique.
After the M times diffusion technique, when silicon chip sheet resistance is drifted about, illustrate after the M times diffusion technique, input it is small
The molar content in diffusion source carried in nitrogen may have occurred change.The small nitrogen needed therefore, it is necessary to adjust the M times diffusion technique
Flow value makes its sheet resistance be restored in the range of the first given threshold, and sheet resistance can be made to restore to the first given threshold range
Interior small nitrogen flow value is as the execution required small nitrogen flow value of the M times diffusion technique.
When each sheet resistance is drifted about, the operation ordinal number of diffusion technique when this sheet resistance is drifted about is determined, and to the expansion
Scattered process operation ordinal number corresponds to required small nitrogen flow value and is modified, and the expansion after the diffusion technique that sheet resistance is drifted about
Small nitrogen flow value after day labor skill Introduced Malaria until next sheet resistance is drifted about, is corrected small nitrogen flow value again.
It determines the corresponding small nitrogen flow value of operation ordinal number of all diffusion techniques, each diffusion technique can be obtained with this
The corresponding small nitrogen flow value of operation ordinal sum correspondence.
S20：According to the correspondence of the small nitrogen flow value of the operation ordinal sum of diffusion technique and the current diffusion technique
Operation ordinal number, currently performed the required small nitrogen flow value of the diffusion technique；
S30：The required small nitrogen flow value of the diffusion technique is currently performed according to described, is inputted to the diffusion furnace small
Nitrogen.
Flow control methods provided in an embodiment of the present invention, the small nitrogen flow of operation ordinal sum of the diffusion technique built in advance
The correspondence of value, correspondence and the current diffusion by the small nitrogen flow value of operation ordinal sum according to diffusion technique
The operation ordinal number of technique currently performs the required small nitrogen flow value of the diffusion technique to diffusion furnace input, only adjusts small nitrogen
Flow value, it can be ensured that essentially identical into diffusion source molar content in diffusion furnace between batch, it is no longer necessary to which that manual intervention is follow-up
Technique reduces the changes of diffusion conditions because and silicon chip sheet resistance has good uniformity between obtained batch.
In the above-mentioned technical solutions, the method being modified to required small nitrogen flow value has very much, shows below with regard to typical case
Example is described in detail, but do not form the limitation to the application.Illustratively, based on the above technical solution, to the M times
The required small nitrogen flow value of diffusion technique is modified, using revised small nitrogen flow value as the M times diffusion technique of execution
Required small nitrogen flow value, can include：
First, it inputs the small nitrogen of multiple and different flow values respectively to diffusion furnace, is diffused process test.
Wherein, when running the M times diffusion technique, the small nitrogen flow value of input can make sheet resistance drift about, then respectively to
The small nitrogen of different flow value is inputted in diffusion furnace, and to the silicon chip sheet resistance after the completion of the corresponding diffusion technique of each small nitrogen flow value
It measures, determines silicon chip sheet resistance during different small nitrogen flow values during the M times diffusion technique.And in order to avoid error range mistake
Greatly, each small nitrogen flow value carries out test of many times when can be to the M times diffusion technique, by average or other calculations, really
The silicon chip sheet resistance that each small nitrogen flow value corresponds to during fixed the M times diffusion technique.
It secondly, will if the sheet resistance of the silicon chip by the M1 times diffusion technique test is within the scope of the second given threshold
When carrying out the M1 times diffusion technique test, to the small nitrogen flow value that the diffusion furnace inputs as the M times diffusion technique institute of execution
The small nitrogen flow value needed, wherein, M1 is positive integer.
Illustratively, the second given threshold range can be set, the second given threshold range is also acceptable sheet resistance wave
Dynamic range, can be identical with the first given threshold range, can also be different.For example, in order to make revised small nitrogen flow value warp
After crossing diffusion technique, the sheet resistance being more nearly with target side resistance value is obtained, the second given threshold range can be set and set than first
Determine that threshold range is small, for example, when set the first given threshold range be target side resistance value float up and down 10% sheet resistance range when,
Second given threshold range can be set as target side resistance value float up and down 5% sheet resistance range.Optionally, can also be set
Two given threshold range smallers, e.g., it is target side resistance value to set it, that is to say, that makes revised small nitrogen flow value by expanding
The sheet resistance obtained after day labor skill is exactly the target sheet resistance set.
When running the M times diffusion technique, the small nitrogen flow value of input can make sheet resistance drift about, then each run to
During M diffusion technique, the small nitrogen of different flow value is inputted into diffusion furnace respectively, it is illustratively, defeated in the M times diffusion technique
The diffusion technique operation serial number of the small nitrogen flow value of difference entered is respectively labeled as Mx, My, M1 ..., Mn.It is inputted when the M1 times small
The small nitrogen of nitrogen flow value can obtain the sheet resistance in the range of the second given threshold, then will input the M1 times of the small nitrogen flow value
The small nitrogen flow value of diffusion technique input is as the execution required small nitrogen flow value of the M times diffusion technique.
In the correspondence of the small nitrogen flow value of operation ordinal sum of diffusion technique built according to the above method, it is only necessary to right
The diffusion technique that each sheet resistance is drifted about carries out the amendment of small nitrogen flow value, the diffusion technique pair when sheet resistance is not drifted about
The small nitrogen flow value answered is not modified.However, in the diffusion technique of adjacent operation ordinal number, the small nitrogen of same traffic value carries
Diffusion source molar content between difference very little, be easily ignored.Mole in diffusion source that the small nitrogen of same traffic value carries
Content difference can add up with the increase of diffusion technique number of run, when the molar content difference in diffusion source that small nitrogen carries
After reaching certain value, the silicon chip sheet resistance after diffusion technique can drift about.That is, the expansion do not drifted about in sheet resistance
In day labor skill, do not modify to small nitrogen flow value, though sheet resistance is not drifted about, the diffusion source of the small nitrogen carrying of input
Molar content has subtle change.
In order to make to input the diffusion source molar content carried in the small nitrogen of diffusion furnace to maintain stabilization in each diffusion technique
In the range of, the corresponding of the small nitrogen flow value of operation ordinal sum that another structure diffusion technique is additionally provided in the embodiment of the present invention is closed
The method of system.Specifically, on the basis of above-described embodiment, S21 can also include：
If the adjacent sheet resistance of silicon chip twice drift betides N1After secondary diffusion technique and N2After secondary diffusion technique, then
Perform the required small nitrogen flow value B of n-th diffusion techniqueNFor
Wherein, BN2To perform N2The secondary required small nitrogen flow value of diffusion technique, BN1To perform N1Secondary diffusion technique
Required small nitrogen flow value；N、N1And N2It is positive integer, and N1＜ N ＜ N2。
It should be noted that since the sheet resistance value difference value obtained after adjacent diffusion technique twice is smaller, it is not easy to judge every
The correction value of the corresponding small nitrogen flow value of secondary diffusion technique.Therefore, the larger institute of diffusion technique twice of sheet resistance difference can be passed through
The small nitrogen flow value needed, the small nitrogen flow value needed for each secondary diffusion technique between diffusion technique twice are modified.Pass through
Diffusion technique (N during adjacent sheet resistance drift twice1Secondary and N2It is secondary) respective required small nitrogen flow value：BN1And BN2, can be with
The correction value of required small nitrogen flow value between diffusion technique twice is determined, according to the correction value and the operation sequence of diffusion technique twice
Number difference can determine the correction value of required small nitrogen flow value in each diffusion technique, therefore, can be determined often according to formula (1)
Small nitrogen flow value needed for secondary diffusion technique operation ordinal number is corresponding.
Wherein, diffusion technique (N during adjacent sheet resistance drift twice1Secondary and N2It is secondary) respective required small nitrogen flow value：
BN1And BN2Specific method of determination does not do any restrictions.Typical case is described in detail below, but is not formed to this Shen
Limitation please.Illustratively, if N1Silicon chip sheet resistance is drifted about after secondary diffusion technique, can be in N1+ 1 diffusion technique
The middle modified B of inputN1+1Small nitrogen flow value, calculate obtained sheet resistance after diffusion technique；In N1It is defeated in+2 diffusion techniques
Enter modified BN1+2Small nitrogen flow value, calculate obtained sheet resistance after diffusion technique；It is reciprocal with this, until N1+ n times are spread
Modified B is inputted in techniqueN1+nSmall nitrogen flow value, obtained sheet resistance be setting target sheet resistance, then, it may be determined that N1+
The small nitrogen flow value that n times diffusion technique needs is BN1+n, can N can be determined according to formula (1)1Secondary diffusion technique and N1+
Between n times diffusion technique, each diffusion technique runs the corresponding required small nitrogen flow value of ordinal number.It is understood that N, N1And N2
Be positive integer, i.e. N1Can be 1, that is to say, that even if after the 1st diffusion technique, sheet resistance is drifted about, can also be according to
The corresponding required small nitrogen flow value of diffusion technique operation ordinal number after being determined according to formula (1).
When sheet resistance, which is drifted about, to be occurred for the first time, then the required small nitrogen flow value of diffusion technique before sheet resistance drift occurs
It needs to be modified on the basis of the required small nitrogen flow value of the 1st diffusion technique.Correspondingly, S21, can also include：
After replacing liquid state diffusion source storage tank, if the drift of first time silicon chip sheet resistance betides N3After secondary diffusion technique,
Then perform the required small nitrogen flow value B of the secondary diffusion techniques of N 'N’For
Wherein, BN3To perform N3The secondary required small nitrogen flow value of diffusion technique, B1To perform the 1st diffusion technique institute
The small nitrogen flow value needed；N ' and N3It is positive integer, and 1 ＜ N ' ＜ N3≤N1。
It is understood that after liquid state diffusion source storage tank is replaced, when first time silicon chip sheet resistance is drifted about, it is not present
The preceding primary diffusion technique that sheet resistance drift occurs, then need on the basis of the required small nitrogen flow value of the 1st diffusion technique,
Each diffusion technique before drifting about to silicon chip sheet resistance corresponds to required small nitrogen flow value and is modified.Wherein, N3It is secondary
After diffusion technique, the drift of first time silicon chip sheet resistance occurs, illustratively, N3Secondary diffusion technique can be above-mentioned technical proposal
In adjacent sheet resistance drift twice when diffusion technique in One Diffusion Process technique, i.e. N3=N1；Can also be in above-mentioned technical proposal
N in diffusion technique during adjacent sheet resistance drift twice1Diffusion technique before secondary diffusion technique, i.e. N3＜ N1。
That is, by formula (2) determine first time sheet resistance drift occur diffusion technique run ordinal number before each diffusion
Small nitrogen flow value needed for process operation ordinal number is corresponding；Diffusion technique when determining that adjacent sheet resistance is drifted about twice by formula (1)
The corresponding required small nitrogen flow value of each diffusion technique operation ordinal number between ordinal number is run, determines that liquid state diffusion source stores with this
Tank is replaced certainly to during replacement next time, and each diffusion technique runs the corresponding required small nitrogen flow value of ordinal number.
Small nitrogen flow value amendment, revised stream are carried out to each diffusion technique after the storage tank of replacement liquid state diffusion source
Magnitude is more accurate, and the diffusion source that the small nitrogen that inputs every time carries can be maintained in stability range substantially, can make between batch
The obtained uniformity of silicon chip sheet resistance is more preferable, and when the diffusion source molar content for inputting diffusion furnace is stablized, and can no longer need
Manual adjustment promotes time adjustment sheet resistance, has saved human cost.
Embodiment three
Fig. 4 is a kind of structure diagram for volume control device that the embodiment of the present invention three provides.Referring to Fig. 4, the present invention
The volume control device that embodiment three provides, including：Ordinal number acquisition module 2 is run, is connected with board control module 4, for obtaining
Take the operation ordinal number of current diffusion technique in diffusion furnace 1；Flow determining module 3 is connected with operation ordinal number acquisition module 2, is used for
According to the correspondence of the small nitrogen flow value of the operation ordinal sum of diffusion technique and the operation ordinal number of current diffusion technique, worked as
The preceding execution required small nitrogen flow value of diffusion technique；Board control module 4 is connected with flow determining module 3, for according to institute
The current execution required small nitrogen flow value of diffusion technique is stated, small nitrogen is inputted to diffusion furnace 1.
Wherein, the concrete mode of operation ordinal number for obtaining diffusion technique to operation ordinal number acquisition module 2 is not limited, and is shown
Example property, board control module 4 can be utilized to record the number of run of diffusion technique in diffusion furnace 1, operation ordinal number acquisition module 2
The operation ordinal number of current diffusion technique is obtained from board control module 4.
The correspondence of the small nitrogen flow value of operation ordinal sum of diffusion technique can carry out framework in advance, illustratively,
Before diffusion technique operation, the correspondence of the small nitrogen flow value of operation ordinal sum of diffusion technique is it has been determined that flow determines mould
Block 3 can be according to needed for the operation ordinal number of the correspondence and current diffusion technique determines current diffusion technique small nitrogen flow
Value, is controlled by board control module 4, and the current execution required small nitrogen flow value of diffusion technique is inputted into diffusion furnace 1
Small nitrogen, saves the time.
It should be noted that when it is liquid state diffusion source to spread source, diffusion source can be first passed through before small nitrogen addition diffusion furnace 1
In, so that the diffusion source that small nitrogen carries out certain molar content from diffusion source enters the participation diffusion reaction of diffusion furnace 1.
It optionally, can be by controlling the small of mass flow controller control input diffusion furnace by board control module 4
Nitrogen flow can also pass through the small nitrogen flow of the device control input diffusion furnace of other control flows.
The volume control device that the embodiment of the present invention proposes currently is expanded by running ordinal number acquisition module and obtaining in diffusion furnace
The operation ordinal number of day labor skill；Flow determining module is according to the correspondence of the small nitrogen flow value of operation ordinal sum of the diffusion technique built
The operation ordinal number of relationship and current diffusion technique determines the current execution required small nitrogen flow value of diffusion technique；Board control
Molding block performs the required small nitrogen flow value of diffusion technique according to current, and small nitrogen is inputted to diffusion furnace, does not need to carry out artificial
It adjusts, is conducive to automated production, the small nitrogen of small nitrogen flow value according to needed for diffusion technique runs ordinal number to diffusion furnace input, with
The sheet resistance value fluctuation that this makes to obtain ground silicon chip is smaller, and sheet resistance uniformity is good between batch, solves in the prior art into diffusion furnace
The small nitrogen of constant flow rate is passed through, then by adjusting diffusion or temperature being promoted to adjust sheet resistance, increases human cost but obtained silicon chip
Sheet resistance fluctuation it is big, between batch the problem of sheet resistance lack of homogeneity, realize and save human cost, silicon chip sheet resistance uniformity is good between batch
Good purpose.
Optionally, operation ordinal number acquisition module 1 can include：Counter 11, after replacing liquid state diffusion source storage tank,
Since diffusion technique number of run 0, One Diffusion Process technique is often run, diffusion technique number of run adds 1；Ordinal number is run to obtain
Module 2 is specifically used for：Diffusion technique is total in the period that acquisition stops from being replaced liquid state diffusion source storage tank to current time
Number of run；Total number of run of the diffusion technique is added into the 1 operation ordinal number as current diffusion technique.
Wherein, counter 11 can record the number of run of diffusion technique in diffusion furnace 1, and expand replacing liquid every time
After dissipating source storage tank, since diffusion technique number of run 0, so as to obtain more accurate process operation number, avoid
Long-time multiple stacking adds up during number of run to go wrong, can also be in the small nitrogen of operation ordinal sum of framework diffusion technique
During the correspondence of flow value, corresponding process operation number is reduced, save human resources and reduces spillage of material.
Operation ordinal number acquisition module 2 is current so as to determine for obtaining currently running diffusion technique operation ordinal number
The operation ordinal number of diffusion technique correspond to required small nitrogen flow value, ensure what the small nitrogen for being passed through diffusion furnace 1 every time carried with this
It spreads identical molar content to maintain in stability range, obtains the silicon chip sheet resistance having good uniformity between batch.
Fig. 5 is a kind of operation ordinal number and the relational graph of silicon chip sheet resistance that the embodiment of the present invention three provides.Wherein, it is horizontal in Fig. 5
Coordinate runs ordinal number for diffusion technique, and ordinate is to run the silicon chip sheet resistance obtained after diffusion technique, and a represents to implement using the present invention
Relationship between operation ordinal number and silicon chip sheet resistance that the volume control device that example provides obtains, b represent to use existing flow control
Relationship between operation ordinal number and silicon chip sheet resistance that device (i.e. the volume control device provided in Fig. 1) processed obtains, c represent setting
Target sheet resistance.
According to Fig. 5 as can be seen that compared with existing volume control device, using the technical solution in the embodiment of the present invention
Obtained sheet resistance fluctuation is smaller, and uniformity is more preferable than comparative example between batch.
Illustratively, a target side resistance value and the first preset threshold range can be set, for example, setting target sheet resistance
For 90 Ω/, the first preset threshold range is the 5% of target sheet resistance, i.e. 85.5 Ω/ -94.5 Ω/.Referring to Fig. 5 it is found that
The silicon chip sheet resistance difference that technical solution provided in an embodiment of the present invention obtains is smaller, and uniformity is good between batch.
It follows that flow control methods provided in an embodiment of the present invention and volume control device, do not need to carry out artificial
It adjusts, is conducive to automated production, the small nitrogen of small nitrogen flow value according to needed for diffusion technique runs ordinal number to diffusion furnace input, with
The sheet resistance value fluctuation that this makes to obtain ground silicon chip is smaller, and sheet resistance uniformity is good between batch, solves in the prior art into diffusion furnace
The small nitrogen of constant flow rate is passed through, then temperature is promoted to adjust sheet resistance by adjusting, increases human cost but the sheet resistance of obtained silicon chip
Fluctuation is big, between batch the problem of sheet resistance lack of homogeneity, realizes and saves human cost, the mesh that silicon chip sheet resistance has good uniformity between batch
's.
The said goods can perform the method that any embodiment of the present invention is provided, and have the corresponding function module of execution method
And advantageous effect.
Example IV
The present embodiment can provide a kind of optional specific example based on above-described embodiment two.
Illustratively, on the basis of above-described embodiment, which can include：
S10：Obtain the operation ordinal number of current diffusion technique in diffusion furnace.
S21：Build the correspondence of the small nitrogen flow value of operation ordinal sum of diffusion technique.
Wherein, S21 can include：
After replacing liquid state diffusion source storage tank, if the drift of first time silicon chip sheet resistance betides N3After secondary diffusion technique,
Then perform the required small nitrogen flow value B of the secondary diffusion techniques of N 'N’For
Wherein, BN3To perform N3The secondary required small nitrogen flow value of diffusion technique, B1To perform the 1st diffusion technique institute
The small nitrogen flow value needed；N ' and N3It is positive integer, and 1 ＜ N ' ＜ N3≤N1。
If the adjacent sheet resistance of silicon chip twice drift betides N1After secondary diffusion technique and N2After secondary diffusion technique, then
Perform the required small nitrogen flow value B of n-th diffusion techniqueNFor
Wherein, BN2To perform N2The secondary required small nitrogen flow value of diffusion technique, BN1To perform N1Secondary diffusion technique
Required small nitrogen flow value；N、N1And N2It is positive integer, and N1＜ N ＜ N2。
It is understood that after replacing liquid state diffusion source storage tank, after performing the 1st diffusion technique, sheet resistance can not be sent out
Raw drift, the drift of first time silicon chip sheet resistance betide N3(1 ＜ N after secondary diffusion technique3).It can be in N3Secondary diffusion technique
When multiple and different small nitrogen flow values is set to be diffused, and detect under each small nitrogen flow value complete diffusion technique after silicon chip
Sheet resistance, it is assumed that the small nitrogen flow value for finding that target sheet resistance can be obtained after detection is BN3, then N3Secondary diffusion technique is by correcting
The required small nitrogen flow value that can obtain target sheet resistance afterwards is BN3, then can pass through formula
Determine the 1st diffusion technique and N3The required small nitrogen flow of the secondary diffusion techniques of N ' between secondary diffusion technique
Value BN’。
Work as N3=N1When, illustrate N2After secondary diffusion technique, second of generation sheet resistance drift then passes through
To determine N1Secondary diffusion technique and N2The required small nitrogen stream of n-th diffusion technique between secondary diffusion technique
Magnitude BN.When sheet resistance drift occurring again, repeat to determine required small nitrogen flow during the above-mentioned adjacent sheet resistance of silicon chip twice drift
The mode of value.Thus, it is possible to determine the corresponding required small nitrogen stream of each diffusion technique in wholly liquid state diffusion source storage tank
Magnitude, until replacing liquid state diffusion source storage tank again.
S20：According to the correspondence of the small nitrogen flow value of the operation ordinal sum of diffusion technique and the current diffusion technique
Operation ordinal number, currently performed the required small nitrogen flow value of the diffusion technique；
S30：The required small nitrogen flow value of the diffusion technique is currently performed according to described, is inputted to the diffusion furnace small
Nitrogen.
It does not need to carry out manual adjustment in the embodiment of the present invention, is conducive to automated production, sequence is run according to diffusion technique
The small nitrogen of small nitrogen flow value, the diffusion source molar content base carried in small nitrogen in each secondary diffusion technique needed for number to diffusion furnace input
This is constant, so as to get the sheet resistance value fluctuation of ground silicon chip is smaller, and sheet resistance uniformity is good between batch, solves in the prior art to diffusion
The small nitrogen of constant flow rate is passed through in stove, then by adjusting diffusion or temperature being promoted to adjust sheet resistance, increases human cost but obtains
The sheet resistance fluctuation of silicon chip is big, between batch the problem of sheet resistance lack of homogeneity, realizes and saves human cost, silicon chip sheet resistance is uniform between batch
The good purpose of property.
Note that it above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The present invention is not limited to specific embodiment described here, can carry out for a person skilled in the art various apparent variations,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
It can include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of flow control methods, which is characterized in that including：
Obtain the operation ordinal number of current diffusion technique in diffusion furnace；
According to the correspondence of the small nitrogen flow value of the operation ordinal sum of diffusion technique and the operation sequence of the current diffusion technique
Number, is currently performed the required small nitrogen flow value of the diffusion technique；
The required small nitrogen flow value of the diffusion technique is currently performed according to described, small nitrogen is inputted to the diffusion furnace.
2. flow control methods according to claim 1, which is characterized in that further include：
After replacing liquid state diffusion source storage tank, since 0, One Diffusion Process technique is often run, diffusion technique number of run adds 1；
The operation ordinal number of current diffusion technique in the acquisition diffusion furnace, including：
Obtain total number of run of diffusion technique in the period stopped from being replaced liquid state diffusion source storage tank to current time；
Total number of run of the diffusion technique is added into the 1 operation ordinal number as current diffusion technique.
3. flow control methods according to claim 1, which is characterized in that the operation ordinal sum according to diffusion technique
The operation ordinal number of the correspondence of small nitrogen flow value and the current diffusion technique is currently performed the diffusion technique institute
Before the small nitrogen flow value needed, further include：
Build the correspondence of the small nitrogen flow value of operation ordinal sum of diffusion technique.
4. flow control methods according to claim 3, which is characterized in that the operation ordinal sum of the structure diffusion technique
The correspondence of small nitrogen flow value, including：
After replacing liquid state diffusion source storage tank, the sheet resistance of the silicon chip after each secondary diffusion technique is measured；
If the sheet resistance of the silicon chip is except the first given threshold range after the M times diffusion technique, judgement is by the M times diffusion
Silicon chip sheet resistance is drifted about after technique；
Small nitrogen flow value required to the M times diffusion technique is modified, using the revised small nitrogen flow value as holding
The required small nitrogen flow value of the M times diffusion technique of row；
Wherein, M is positive integer.
5. flow control methods according to claim 4, which is characterized in that described required to the M times diffusion technique
Small nitrogen flow value is modified, using the revised small nitrogen flow value as the execution required small nitrogen of the M times diffusion technique
Flow value, including：
It inputs the small nitrogen of multiple and different flow values respectively to the diffusion furnace, is diffused process test；
If the sheet resistance of the silicon chip by the M1 times diffusion technique test within the scope of the second given threshold, will carry out the M1 times
When diffusion technique is tested, to the small nitrogen flow value that the diffusion furnace inputs as the execution required small nitrogen of the M times diffusion technique
Flow value；
Wherein, M1 is positive integer.
6. flow control methods according to claim 4, which is characterized in that the operation ordinal sum of the structure diffusion technique
The correspondence of small nitrogen flow value, further includes：
If the adjacent sheet resistance of silicon chip twice drift betides N1After secondary diffusion technique and N2After secondary diffusion technique；
Then perform the required small nitrogen flow value B of n-th diffusion techniqueNFor
Wherein, BN2To perform N2The secondary required small nitrogen flow value of diffusion technique, BN1To perform N1Needed for secondary diffusion technique
The small nitrogen flow value wanted；N、N1And N2It is positive integer, and N1＜ N ＜ N2。
7. flow control methods according to claim 6, which is characterized in that the operation ordinal sum of the structure diffusion technique
The correspondence of small nitrogen flow value, further includes：
After replacing liquid state diffusion source storage tank, if the drift of first time silicon chip sheet resistance betides N3After secondary diffusion technique；
Then perform the required small nitrogen flow value B of the secondary diffusion techniques of N 'N’For
Wherein, BN3To perform N3The secondary required small nitrogen flow value of diffusion technique, B1For required for the 1st diffusion technique of execution
Small nitrogen flow value；N ' and N3It is positive integer, and 1 ＜ N ' ＜ N3≤N1。
8. flow control methods according to claim 2, which is characterized in that
The diffusion source is phosphorus oxychloride or Boron tribromide.
9. a kind of volume control device, which is characterized in that including：
Ordinal number acquisition module is run, is connected with board control module, for obtaining the operation sequence of current diffusion technique in diffusion furnace
Number；
Flow determining module is connected with the operation ordinal number acquisition module, for the small nitrogen of operation ordinal sum according to diffusion technique
The operation ordinal number of the correspondence of flow value and the current diffusion technique, required for currently being performed the diffusion technique
Small nitrogen flow value；
Board control module is connected with the flow determining module, for currently being performed needed for the diffusion technique according to described
The small nitrogen flow value wanted inputs small nitrogen to the diffusion furnace.
10. volume control device according to claim 9, which is characterized in that the operation ordinal number acquisition module includes：
Counter after replacing liquid state diffusion source storage tank, since diffusion technique number of run 0, has often run primary expansion
Day labor skill, diffusion technique number of run add 1；
The operation ordinal number acquisition module is specifically used for：
Obtain total number of run of diffusion technique in the period stopped from being replaced liquid state diffusion source storage tank to current time；
Total number of run of the diffusion technique is added into the 1 operation ordinal number as current diffusion technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711456622.5A CN108198771B (en) | 2017-12-28 | 2017-12-28 | Flow control method and flow control device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711456622.5A CN108198771B (en) | 2017-12-28 | 2017-12-28 | Flow control method and flow control device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108198771A true CN108198771A (en) | 2018-06-22 |
| CN108198771B CN108198771B (en) | 2020-05-15 |
Family
ID=62585439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711456622.5A Active CN108198771B (en) | 2017-12-28 | 2017-12-28 | Flow control method and flow control device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108198771B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914208A (en) * | 2018-07-23 | 2018-11-30 | 中国电子科技集团公司第四十八研究所 | A kind of diffusion furnace technology self diagnosis optimization method and device |
| CN114678449A (en) * | 2022-05-27 | 2022-06-28 | 一道新能源科技(衢州)有限公司 | Diffusion process for reducing doping concentration of N + region of solar cell |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237010A (en) * | 2008-02-29 | 2008-08-06 | 珈伟太阳能(武汉)有限公司 | Method for improving solar battery diffusion |
| CN102254991A (en) * | 2011-06-30 | 2011-11-23 | 浚鑫科技股份有限公司 | Crystalline silicon solar cell and diffusion method thereof |
| CN102569523A (en) * | 2012-02-09 | 2012-07-11 | 苏州盛康光伏科技有限公司 | Diffusion method for polycrystalline silicon solar photovoltaic cell silicon chip |
| CN104393107A (en) * | 2014-10-27 | 2015-03-04 | 中国电子科技集团公司第四十八研究所 | High-sheet resistance crystalline silicon cell low-voltage diffusion process |
| CN105428226A (en) * | 2015-10-29 | 2016-03-23 | 晋能清洁能源科技有限公司 | Tubular POCl3 diffusion sheet resistance automatic adjusting method |
| CN206022326U (en) * | 2016-08-31 | 2017-03-15 | 无锡尚德太阳能电力有限公司 | The intelligence control system of adjustment diffused sheet resistance |
-
2017
- 2017-12-28 CN CN201711456622.5A patent/CN108198771B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101237010A (en) * | 2008-02-29 | 2008-08-06 | 珈伟太阳能(武汉)有限公司 | Method for improving solar battery diffusion |
| CN102254991A (en) * | 2011-06-30 | 2011-11-23 | 浚鑫科技股份有限公司 | Crystalline silicon solar cell and diffusion method thereof |
| CN102569523A (en) * | 2012-02-09 | 2012-07-11 | 苏州盛康光伏科技有限公司 | Diffusion method for polycrystalline silicon solar photovoltaic cell silicon chip |
| CN104393107A (en) * | 2014-10-27 | 2015-03-04 | 中国电子科技集团公司第四十八研究所 | High-sheet resistance crystalline silicon cell low-voltage diffusion process |
| CN105428226A (en) * | 2015-10-29 | 2016-03-23 | 晋能清洁能源科技有限公司 | Tubular POCl3 diffusion sheet resistance automatic adjusting method |
| CN206022326U (en) * | 2016-08-31 | 2017-03-15 | 无锡尚德太阳能电力有限公司 | The intelligence control system of adjustment diffused sheet resistance |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108914208A (en) * | 2018-07-23 | 2018-11-30 | 中国电子科技集团公司第四十八研究所 | A kind of diffusion furnace technology self diagnosis optimization method and device |
| CN114678449A (en) * | 2022-05-27 | 2022-06-28 | 一道新能源科技(衢州)有限公司 | Diffusion process for reducing doping concentration of N + region of solar cell |
| CN114678449B (en) * | 2022-05-27 | 2022-09-02 | 一道新能源科技(衢州)有限公司 | Diffusion process for reducing doping concentration of N + region of solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108198771B (en) | 2020-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10755617B2 (en) | De-mura amendment method of display panel | |
| CN108198771A (en) | A kind of flow control methods and volume control device | |
| CN105223781B (en) | A kind of stepper aligns monitoring method | |
| CN104404468A (en) | Preparation device and preparation method of high-flux combined material | |
| CN107891596A (en) | A kind of uniform intensity bearing calibration of DLP photocurings 3D printer | |
| CN105070782A (en) | Low-pressure diffusion technique in solar cell silicon wafer production process | |
| CN105070251A (en) | Backlight control method and device | |
| CN104635383A (en) | Alignment film producing method of liquid crystal panel | |
| CN104871291B (en) | The manufacturing method of crystalline semiconductor film | |
| CN105428226B (en) | A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method | |
| CN104050661A (en) | Method for adjusting accuracy of area scanning three-dimensional measuring system in real time | |
| CN106158623A (en) | Bearing calibration for thermal treatment unit | |
| CN104391530B (en) | A kind of automatic calibration process of tubular diffusion furnace warm area based on PID Self-tuning Systems | |
| CN109280967A (en) | A kind of method of molecular beam epitaxy different type electron gun furnace parameters conversion | |
| CN103715073B (en) | Improve the method for ion implantation | |
| CN108411357A (en) | A kind of doper and method improving zone-melted vapor doping stability | |
| CN103715301B (en) | A kind of method of efficient diffusion | |
| CN114512571A (en) | Intelligent regulation and control method, system and equipment for diffusion sheet resistance and readable storage medium | |
| CN204369980U (en) | A kind of high-throughput composition material preparation facilities | |
| CN103879386A (en) | Battery case calibration method based on full-automatic battery-changing robot | |
| CN109635467B (en) | Method for acquiring cutting rate of printed circuit board | |
| CN103390538B (en) | The real-time allocating method of photoetching district board and system | |
| ES2724477T3 (en) | Apparatus for updating the loading / unloading efficiency factors of an energy storage system | |
| CN104021770B (en) | The processing method of bore hole 3D LCDs module parameter | |
| CN104022054A (en) | Method for monitoring temperature of epitaxial cavity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200618 Address after: Room 1505-8, building 1, Jiaxing photovoltaic technology innovation park, 1288 Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province Patentee after: Jiaxing atlas Photovoltaic Technology Co., Ltd Address before: 215129 Suzhou high tech Zone, Jiangsu, Lu Shan Road, No. 199 Co-patentee before: CSI SOLAR POWER GROUP Co.,Ltd. Patentee before: CSI Cells Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 314000 buildings 1 and 2, No. 325, Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province Patentee after: Jiaxing atlas Technology Research Institute Co.,Ltd. Address before: Room 1505-8, building 1, Jiaxing photovoltaic technology innovation park, 1288 Kanghe Road, Gaozhao street, Xiuzhou District, Jiaxing City, Zhejiang Province, 314000 Patentee before: Jiaxing atlas Photovoltaic Technology Co., Ltd |
|
| CP03 | Change of name, title or address |