CN105428226A - Tubular POCl3 diffusion sheet resistance automatic adjusting method - Google Patents
Tubular POCl3 diffusion sheet resistance automatic adjusting method Download PDFInfo
- Publication number
- CN105428226A CN105428226A CN201510718906.1A CN201510718906A CN105428226A CN 105428226 A CN105428226 A CN 105428226A CN 201510718906 A CN201510718906 A CN 201510718906A CN 105428226 A CN105428226 A CN 105428226A
- Authority
- CN
- China
- Prior art keywords
- sheet resistance
- dlv
- phosphorus source
- source diffusion
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 28
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 title abstract 4
- 229910019213 POCl3 Inorganic materials 0.000 title abstract 2
- 239000007788 liquid Substances 0.000 claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 30
- 229910052698 phosphorus Inorganic materials 0.000 claims description 30
- 239000011574 phosphorus Substances 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 10
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 9
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 6
- 238000010924 continuous production Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
Abstract
The invention discloses a tubular POCl3 diffusion sheet resistance automatic adjusting method, comprising liquid phosphorous source diffusion devices, an automatic charging and feeding machine, and a computer in connection with the liquid phosphorous source diffusion devices and the automatic charging and feeding machine. Each liquid phosphorous source diffusion device is provided with a corresponding DLV file generated through a software program; the computer stores DLV files and computes the sheet resistance value of a corresponding temperature zone of each liquid phosphorous source diffusion device; in a production process, the liquid phosphorous source diffusion devices automatically call and read DLV file associated parameters, and automatically adjust the diffusion temperature of different temperature zones in the liquid phosphorous source diffusion devices through calling DLV parameters. According to the method, built data links with variable DLV files, and in a production process, through the automatic calling of the DLV files, the diffusion sheet resistance can be automatically adjusted in a continuous production process.
Description
Technical field
The present invention relates to a kind of manufacture method of crystal silicon solar energy battery, specifically a kind of tubular type POCl
3diffused sheet resistance automatic adjusting method.
Background technology
At present, in crystal-silicon solar cell manufacturing, P type substrate crystal silicon solar batteries diffusion adopts tubular type liquid phosphorus source High temperature diffusion mode for pn knot is main; The diffused sheet resistance generally regulated and controled among a small circle by the little nitrogen flow adjusting furnace tube temperature or carry phosphorus source is fluctuated.The common methods of furnace tube temperature adjustment is in consecutive numbers pipe, keeps deposition steps temperature-resistant, until sheet resistance fluctuation to certain limit, adjusts deposition steps temperature, and then continuous seepage number pipe, with this repeatedly; Another kind method, then based on the sheet resistance of actual measurement and the difference of target sheet resistance, based on both having experience, adjusts diffused sheet resistance by little nitrogen flow set change.Although these methods serve the steady operation of diffused sheet resistance to a certain extent, be limited to the lasting change of boiler tube self difference, phosphorus bottle liquid level in a steady stream, these methods all have significant limitation.Meanwhile, be limited to engineer's capacity variance, above-mentioned control method itself has more very large risk.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of tubular type POCl that can realize the automatic adjustment of continuous flow procedure diffused sheet resistance
3diffused sheet resistance automatic adjusting method.
In order to solve the problems of the technologies described above, tubular type POCl of the present invention
3diffused sheet resistance automatic adjusting method, the computer comprising liquid phosphorus source diffusion facilities, automatic loading/unloading machine and be connected with liquid phosphorus source diffusion facilities, automatic loading/unloading machine, each liquid phosphorus source diffusion facilities has the DLV file automatically generated by software program corresponding with it, calculator memory stores up above-mentioned DLV file and can carry out computing to the sheet resistance value of the corresponding warm area of each liquid phosphorus source diffusion facilities, during calculating, each warm area is separately independent calculates, and corresponding formula is as follows:
CTEMP
m＝(A(R)m-R
target)×K
corr+CTEMP+TEM
de
Wherein A (R)
mrepresent the sheet resistance average of the corresponding warm area of continuous seepage n boat, Ri is the sheet resistance calculated value of the corresponding warm area of the i-th boat, CTEMP
mbe the automatic adjustment temperature value of the m time, R
targetfor goal-selling sheet resistance value, K
corrfor the temperature correction coefficient that the m time temperature relevant to phosphorus source liquid level adjusts, CTEMP is boiler tube initial setting depositing temperature, TEM
defor the depositing temperature offset of the different warm area of boiler tube;
In process of production, liquid phosphorus source diffusion facilities Automatically invoked also reads the relevant parameter of DLV file, and by calling DLV parameter, in the diffusion facilities of automatic liquid towards phosphorus source, the diffusion temperature of different warm area adjusts.
Described computer is also connected with a sheet resistance testing equipment, and described sheet resistance testing equipment can the other side's resistance be tested.
Described liquid phosphorus source diffusion facilities is tubular diffusion furnace.
After adopting above-mentioned method, because each liquid phosphorus source diffusion facilities has the DLV file automatically generated by software program corresponding with it, calculator memory stores up above-mentioned DLV file and can carry out computing to the sheet resistance value of the corresponding warm area of each liquid phosphorus source diffusion facilities, the data link variable files DLV set up thus, in process of production, by the Automatically invoked of DLV file, realize the automatic adjustment of continuous flow procedure diffused sheet resistance; Except can realize stablizing, except uniform boiler tube diffused sheet resistance, based on the DLV file that each boiler tube stores separately, the diffusional deposition temperature calculating the different warm area of each pipe obtained can be preserved in detail; Based on said temperature combined data, the depositing temperature difference of different boiler tube can be contrasted quickly and easily, and then more effectively realize the global optimization of diffusion workshop section.
Embodiment
Below in conjunction with embodiment, to POCl of the present invention
3diffused sheet resistance automatic adjusting method is described in further detail.
POCl of the present invention
3diffused sheet resistance automatic adjusting method, comprise liquid phosphorus source diffusion facilities, automatic loading/unloading machine, sheet resistance testing equipment and with liquid phosphorus source diffusion facilities, automatic charging & discharging machine, the computer that sheet resistance testing equipment connects, liquid phosphorus source diffusion facilities is preferably tubular diffusion furnace, automatic charging & discharging machine is preferably Robert section automatic loading/unloading equipment, sheet resistance testing equipment is preferably Semilab sheet resistance and automatically detects (test light voltage) equipment, for each liquid phosphorus source diffusion facilities, be there is the DLV file automatically generated by software program, calculator memory stores up above-mentioned DLV file and can carry out computing to the sheet resistance value of the corresponding warm area of each liquid phosphorus source diffusion facilities, formula is as follows:
R
LZ＝R
1、R
CLZ＝(R
2+R
3)/2、R
CZ＝(R
4+R
5)/2、R
CGZ＝(R
6+R
7)、R
GZ＝R
8
The furnace tube temperature of diffusional deposition step has been calculated automatically by the sheet resistance average of correspondence 5 warm areas of front n boat (can adjust according to actual conditions), 5 warm area separately independent calculating during calculating, and corresponding formula is as follows:
CTEMP
m＝(A(R)m-R
target)×K
corr+CTEMP+TEM
de
Wherein A (R)
mrepresent the sheet resistance average of the corresponding warm area of continuous seepage n boat, Ri is the sheet resistance calculated value of the corresponding warm area of the i-th boat, CTEMP
mbe the automatic adjustment temperature value of the m time, R
targetfor goal-selling sheet resistance value, K
corrfor the temperature correction coefficient that the m time temperature relevant to phosphorus source liquid level adjusts, CTEMP is boiler tube initial setting depositing temperature, TEM
defor the depositing temperature offset of the different warm area of boiler tube; CTEMP
m, K
corr, TEM
de, CTEMP is as DLV parameter part, i.e. data link variable, and this parameters in series independently can form DLV file.
In actual production process, need in DLV file goal-selling sheet resistance R
target, diffusion furnace initial setting depositing temperature CTEMP, the depositing temperature offset TEM of the different warm area of boiler tube
de, and the temperature relevant to source bottle liquid level adjusts adjusted coefficient K
corr(K
corrfor the class value set for different liquid level, with liquid level change, the K called
corrvalue also changes thereupon).After completing setting value, liquid phosphorus source diffusion facilities Automatically invoked also reads the relevant parameter of DLV file, by calling DLV parameter, in the diffusion facilities of automatic liquid towards phosphorus source, the diffusion temperature of different warm area adjusts, thus the uniformity of diffused sheet resistance in the stability of diffused sheet resistance and pipe between guarantee pipe, in addition, sheet resistance testing equipment can the other side's resistance be tested, as there is mistake in test process, or insecure sheet resistance value, can human intervention error result is removed, thus ensure to calculate the boiler tube obtained different warm area setting depositing temperature CTEMP
maccuracy, in addition, for TEM
devalue, can be given necessary adjustment as required too in process of production, be optimized by DLV automatic compensating method, achieves following line sheet resistance of producing and controls, the diffused sheet resistance of multiple batches of crystal silicon solar cell sheets of different boiler tube all fluctuates in very close limit, effectively achieve the accurate control of tubular type liquid phosphorus source High temperature diffusion sheet resistance, in pipe, the sheet resistance uniformity controlling of different warm area is within 2.5%, reaches top standard of the same trade.
Claims (3)
1. a POCl
3diffused sheet resistance automatic adjusting method, it is characterized in that: the computer comprising liquid phosphorus source diffusion facilities, automatic loading/unloading machine and be connected with liquid phosphorus source diffusion facilities, automatic loading/unloading machine, liquid phosphorus source diffusion facilities described in each has the DLV file automatically generated by software program corresponding with it, described calculator memory stores up above-mentioned DLV file and can carry out computing to the sheet resistance value of the corresponding warm area of liquid phosphorus source diffusion facilities described in each, during calculating, each warm area is separately independent calculates, and corresponding formula is as follows:
CTEMP
m＝(A(R)m-R
target)×K
corr+CTEMP+TEM
de
Wherein A (R)
mrepresent the sheet resistance average of the corresponding warm area of continuous seepage n boat, Ri is the sheet resistance calculated value of the corresponding warm area of the i-th boat, CTEMP
mbe the automatic adjustment temperature value of the m time, R
targetfor goal-selling sheet resistance value, K
corrfor the temperature correction coefficient that the m time temperature relevant to phosphorus source liquid level adjusts, CTEMP is boiler tube initial setting depositing temperature, TEM
defor the depositing temperature offset of the different warm area of boiler tube;
In process of production, liquid phosphorus source diffusion facilities Automatically invoked also reads the relevant parameter of DLV file, and by calling DLV parameter, in the diffusion facilities of automatic liquid towards phosphorus source, the diffusion temperature of different warm area adjusts.
2. according to POCl according to claim 1
3diffused sheet resistance automatic adjusting method, is characterized in that: described computer is also connected with a sheet resistance testing equipment, and described sheet resistance testing equipment can the other side's resistance be tested.
3. according to POCl according to claim 1
3diffused sheet resistance automatic adjusting method, is characterized in that: described liquid phosphorus source diffusion facilities is tubular diffusion furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510718906.1A CN105428226B (en) | 2015-10-29 | 2015-10-29 | A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510718906.1A CN105428226B (en) | 2015-10-29 | 2015-10-29 | A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105428226A true CN105428226A (en) | 2016-03-23 |
| CN105428226B CN105428226B (en) | 2017-12-15 |
Family
ID=55506350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510718906.1A Active CN105428226B (en) | 2015-10-29 | 2015-10-29 | A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105428226B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601871A (en) * | 2016-12-12 | 2017-04-26 | 徐州鑫宇光伏科技有限公司 | Diffusion source temperature regulation and control method and apparatus thereof |
| CN108198771A (en) * | 2017-12-28 | 2018-06-22 | 苏州阿特斯阳光电力科技有限公司 | A kind of flow control methods and volume control device |
| CN114512571A (en) * | 2021-12-20 | 2022-05-17 | 浙江爱旭太阳能科技有限公司 | Intelligent regulation and control method, system and equipment for diffusion sheet resistance and readable storage medium |
| CN114512571B (en) * | 2021-12-20 | 2024-07-02 | 浙江爱旭太阳能科技有限公司 | Intelligent regulation and control method, system and equipment for diffusion sheet resistance and readable storage medium |
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|---|---|---|---|---|
| WO2010136902A1 (en) * | 2009-05-29 | 2010-12-02 | Roth & Rau Ag | In-line gas-phase diffusion furnace |
| CN103092230A (en) * | 2013-01-07 | 2013-05-08 | 济南大学 | Diffusion furnace smart temperature control system |
| CN104391530A (en) * | 2014-10-30 | 2015-03-04 | 晶澳太阳能有限公司 | Tubular diffusion furnace temperature area automatic calibration technology based on PID self-setting |
| CN104532212A (en) * | 2015-01-05 | 2015-04-22 | 上海微世半导体有限公司 | LPCVD initial-deposition furnace temperature accurate control method |
-
2015
- 2015-10-29 CN CN201510718906.1A patent/CN105428226B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010136902A1 (en) * | 2009-05-29 | 2010-12-02 | Roth & Rau Ag | In-line gas-phase diffusion furnace |
| CN103092230A (en) * | 2013-01-07 | 2013-05-08 | 济南大学 | Diffusion furnace smart temperature control system |
| CN104391530A (en) * | 2014-10-30 | 2015-03-04 | 晶澳太阳能有限公司 | Tubular diffusion furnace temperature area automatic calibration technology based on PID self-setting |
| CN104532212A (en) * | 2015-01-05 | 2015-04-22 | 上海微世半导体有限公司 | LPCVD initial-deposition furnace temperature accurate control method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601871A (en) * | 2016-12-12 | 2017-04-26 | 徐州鑫宇光伏科技有限公司 | Diffusion source temperature regulation and control method and apparatus thereof |
| CN106601871B (en) * | 2016-12-12 | 2019-03-15 | 徐州鑫宇光伏科技有限公司 | Spread the regulation method and device of source temperature |
| CN108198771A (en) * | 2017-12-28 | 2018-06-22 | 苏州阿特斯阳光电力科技有限公司 | A kind of flow control methods and volume control device |
| CN108198771B (en) * | 2017-12-28 | 2020-05-15 | 苏州阿特斯阳光电力科技有限公司 | Flow control method and flow control device |
| CN114512571A (en) * | 2021-12-20 | 2022-05-17 | 浙江爱旭太阳能科技有限公司 | Intelligent regulation and control method, system and equipment for diffusion sheet resistance and readable storage medium |
| CN114512571B (en) * | 2021-12-20 | 2024-07-02 | 浙江爱旭太阳能科技有限公司 | Intelligent regulation and control method, system and equipment for diffusion sheet resistance and readable storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105428226B (en) | 2017-12-15 |
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Address after: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Patentee after: Jinneng clean energy technology stock company Address before: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Patentee before: Jin Neng Clean-tech Co., Ltd |