CN101651087B - Method for monitoring ion implantation - Google Patents
Method for monitoring ion implantation Download PDFInfo
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- CN101651087B CN101651087B CN2008101462267A CN200810146226A CN101651087B CN 101651087 B CN101651087 B CN 101651087B CN 2008101462267 A CN2008101462267 A CN 2008101462267A CN 200810146226 A CN200810146226 A CN 200810146226A CN 101651087 B CN101651087 B CN 101651087B
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Abstract
The invention discloses a method for monitoring ion implantation, which comprises the following steps: 1, providing a wafer for monitoring, wherein the wafer contains a silicon material; 2, implanting a predetermined amount of ions at least twice; and 3, tempering the wafer and then measuring the resistance of the wafer. The method can monitor and reflect ion implantation by using few costs and procedures.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, the monitoring method that particularly a kind of ion is implanted.
Background technology
The high energy ion implantation machine monitoring that exists at present generally is that resistance is measured in tempering again after one implantation, and because the energy range that board is contained when practical application is bigger, usually all need to measure respectively the formula of high and low energy, and high energy ion implant machine generally in twice or three roads in addition more times ground use the i.e. continuous often several roads of the flow process of product implantation successively from high to low when implanting.
Summary of the invention
In view of above-mentioned, wish to have a kind of method that can implant and can directly reflect the ion implantation with less cost and sequential monitoring ion.
Thereby the present invention proposes the monitoring method that a kind of ion is implanted, may further comprise the steps,
Step 1 provides a monitoring to use wafer, contains silicon materials in the wafer;
Step 2, at least twice implants the ion of predetermined close;
Step 3 is carried out tempering to wafer, then measures the resistance of wafer.
If the ion of implanting is a P type ion, above-mentioned monitoring can be a N type wafer with wafer; If the ion of implanting is the N type, above-mentioned monitoring can be a P type wafer with wafer.
The energy of implanting ions is between 200kev-1200kev, and the energy of at least twice implantation reduces gradually.If the wafer that adopts is a N type wafer, the ion of implanting for three times then, implanting energy is respectively 800kev, 350kev, 250kev.At this moment, the ion of implantation can be phosphonium ion.If the wafer that adopts is a P type wafer, the ion of twice implantation then, implanting energy is respectively 450kev/165kev.At this moment, the ion of implantation can be the boron ion.
Utilize method of the present invention to measure more exactly to wafer, thus the cost of control flow, and directly reactive ion is implanted.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.For the person of ordinary skill in the field, from detailed description of the invention, above-mentioned and other purposes of the present invention, feature and advantage will be apparent.
Description of drawings
Fig. 1 is a flow chart of the present invention;
Fig. 2 is the implant dosage of a preferred embodiment of the present invention and the schematic diagram of resistance relation;
Fig. 3 is the energy of a preferred embodiment of the present invention and the schematic diagram of resistance relation;
Fig. 4 is the ion distribution schematic diagram of wafer after the tempering of a preferred embodiment of the present invention.
Embodiment
The monitoring method of a kind of ion of the present invention being implanted below in conjunction with the drawings and specific embodiments is described in further detail.
The invention provides a kind of method that can monitor the ion implantation, in order to judge the implantation situation of ion, thereby in the concrete process of manufacturing, adjust the situation of the ion of implanting, for example, if in the process of the actual implanting state of simulation, at first repeatedly implant, resistance was higher after then detection drew implanting ions, then reduce to test once more behind the dosage, carry out implantation, measuring process, after whole implantation finish, carry out tempering and measure.And the used wafer of this method can utilize the saving cost once more after handling.The present invention can be used for the manufacture process of multiple semiconductor device, and for example memory, controller, gate semiconductor etc. can adopt high energy ion implantation machine to monitor.
The step of a preferred embodiment of the present invention comprises as shown in Figure 1:
Step 1, one monitoring wafer is provided, this monitoring can repeatedly be used with wafer, remove as long as will implant etched thickness last time, for example grind and go several microns, contain silicon materials in the wafer, for example be monocrystalline silicon Si, wafer is a N type wafer, and it is similar with the N well structure in the semiconductor device to be made, and this wafer has certain thickness.
Step 2 is at first implanted for example phosphonium ion of 4E13 predetermined close, and implanting energy is 200～1200kev, and for example 800kev depends on the needs, and the relation of the dosage of implanting ions and resistance as shown in Figure 2, and implanting ions dosage is high more, and resistance is low more; The energy of implanting ions and the relation of resistance as shown in Figure 3, the implanting ions energy is high more, resistance is low more.Wherein phosphonium ion can have multiple different form, and the phosphorus impurities of any appropriate all is fine, and the ion required with the semiconductor device of making is identical, can certainly be other suitable ions, as boron ion, arsenic ion etc.The implantation mode can be the implantation pattern of the N trap in the implanted semiconductor device, it implants energy and dosage is adjustable, so that make susceptibility and the error repeatedly implanted all meet the demands, for example susceptibility requires＞0.5, standard error requires＜1%, perhaps susceptibility requires＞0.7, and standard error requires＜0.8%.
Step 3, again with lower energy, for example the energy of 350kev is implanted predetermined close, for example phosphonium ion of 4.5e13.
Step 4, again with lower energy, for example the energy of 250kev is implanted predetermined close, for example phosphonium ion of 6.2e12.
Step 5 is carried out tempering to wafer, and for example under 1050 ℃ situation, aerating oxygen 0.6-1slm feeds nitrogen 7.0-8slm, tempering time 20-35s.
Step 6 is utilized board, and for example the RS board is measured the resistance of wafer, Standard resistance range: 1050-1150 ohm.
Step 7 if the resistance of measuring is not within the limits prescribed, is then adjusted technology, and for example resistance if desired is 1100 ohm, and the resistance that obtains is 1050 ohm, then reduces the dosage and the energy of the ion implanted, implants again; Resistance if desired is 1050 ohm, and the resistance that obtains is 1100 ohm, then reduces the dosage and the energy of the ion implanted, implants again.
The present invention can also repeat above-mentioned steps and take multiple measurements, thereby guarantees that this reappearance of repeatedly implanting the sheet resistor of back wafer meets the requirement of product.
The method that the monitoring ion of another preferred embodiment of the present invention is implanted may further comprise the steps:
Step 1 provides a monitoring to use wafer, contains silicon materials in the wafer, and wafer is a P type wafer, and itself and P well structure are similar, and this wafer has certain thickness;
Step 2 is at first implanted predetermined close, the boron ion of 4e13 for example, and implanting energy is 200～1200kev, for example 450kev depends on the needs, and the relation of the dosage of implanting ions and resistance is as shown in Figure 2, and implanting ions dosage is high more, and resistance is low more; The energy of implanting ions and the relation of resistance as shown in Figure 3, the implanting ions energy is high more, resistance is low more.Wherein the boron ion can have multiple different form, and the boron impurity of any appropriate all is fine, and the ion required with the semiconductor device of making is identical, can certainly be other suitable ions.The implantation mode can be the implantation pattern of the P trap in the implanted semiconductor device, and it implants energy and dosage is adjustable, so that make the susceptibility of repeatedly implanting all meet the demands.
Step 3 is implanted predetermined close, for example the boron ion of 5.5e13 with the energy of for example 165kev again.
Step 4 is carried out tempering to wafer, and for example under 1050 ℃ situation, aerating oxygen 0.6-1slm feeds nitrogen 7.0-8slm, tempering time 20-35s in tempering.
Step 5 is utilized board, and for example the RS board is measured the resistance of wafer.
Step 6 if the resistance of measuring is not within the limits prescribed, is then adjusted technology, the dosage that change is implanted, energy etc.For example resistance if desired is 1100 ohm, and the resistance that obtains is 1050 ohm, then reduces the dosage and the energy of the ion implanted, implants again; Resistance if desired is 1050 ohm, and the resistance that obtains is 1100 ohm, then reduces the dosage and the energy of the ion implanted, implants again.
The above is preferred embodiment of the present invention only, is not to be used for limiting practical range of the present invention; If do not break away from the spirit and scope of the present invention, the present invention is made amendment or is equal to replacement, all should be encompassed in the middle of the protection range of claim of the present invention.
Claims (3)
1. the monitoring method that ion is implanted is characterized in that may further comprise the steps,
Step 1 provides a monitoring to use wafer, contains silicon materials in the wafer;
Step 2, at least twice implants the ion of predetermined close, and the energy of above-mentioned at least twice implantation reduces gradually;
Step 3 is carried out tempering to wafer, then measures the resistance of wafer;
Wherein, if the ion of implanting is a N type ion, above-mentioned monitoring wafer is a N type wafer, three implanting ions then, and the implantation energy is respectively 800kev, 350kev, 250kev;
If the ion of implanting is the P type, above-mentioned monitoring wafer is a P type wafer, twice implanting ions then, and the implantation energy is respectively 450kev, 165kev.
2. monitoring method according to claim 1 is characterized in that, when above-mentioned monitoring wafer was N type wafer, the ion of implantation was a phosphonium ion.
3. monitoring method according to claim 1 is characterized in that, when above-mentioned monitoring wafer was P type wafer, the ion of implantation was the boron ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101462267A CN101651087B (en) | 2008-08-12 | 2008-08-12 | Method for monitoring ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101462267A CN101651087B (en) | 2008-08-12 | 2008-08-12 | Method for monitoring ion implantation |
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| CN101651087A CN101651087A (en) | 2010-02-17 |
| CN101651087B true CN101651087B (en) | 2011-11-09 |
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| CN2008101462267A Expired - Fee Related CN101651087B (en) | 2008-08-12 | 2008-08-12 | Method for monitoring ion implantation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106898546B (en) * | 2017-03-13 | 2020-08-25 | 上海华力微电子有限公司 | Method for monitoring Ge ion implantation quality |
| CN110047773A (en) * | 2019-04-28 | 2019-07-23 | 德淮半导体有限公司 | The monitoring method and semiconductor structure of ion implantation energy |
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