CN106898546B - Method for monitoring Ge ion implantation quality - Google Patents
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- CN106898546B CN106898546B CN201710146467.0A CN201710146467A CN106898546B CN 106898546 B CN106898546 B CN 106898546B CN 201710146467 A CN201710146467 A CN 201710146467A CN 106898546 B CN106898546 B CN 106898546B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The invention discloses a method for monitoring Ge ion implantation quality, which comprises the steps of firstly providing a test sample, secondly selecting As ions with the same atomic mass As the Ge ions to be monitored to replace the Ge ions, keeping the other implantation conditions unchanged, carrying out ion implantation on the test sample, then measuring the square resistance of an ion implantation layer after high-temperature annealing, judging the As ion implantation quality with the same atomic mass As the Ge ions to be monitored according to the measurement value result of the square resistance, and equivalently judging the Ge ion implantation quality to be monitored. Since the atomic mass is the same, the path through the magnetic field analyzer and the acceleration path in the ion implanter are also the same, and thus, the depth and angle of the ion implantation should be the same when the remaining implantation conditions are the same. Therefore, the Ge ion implantation quality can be monitored by adopting an Rs monitoring method with higher monitoring sensitivity, and the requirement of advanced process on monitoring of the Ge ion implantation quality is met.
Description
Technical Field
The invention relates to an ion implantation technology in the technical field of semiconductor manufacturing, in particular to a method for monitoring Ge ion implantation quality.
Background
The ion implantation technology is a key pre-process in the manufacture of integrated circuits, and is to accelerate ions generated by an ion source to enter the surface of a solid, and realize doping by interatomic collision, so as to finally form various transistors required to be achieved.
Impurity doping changes the carrier concentration and the conductivity type of the surface of a semiconductor, so that the implantation depth, the implantation angle and the implantation dosage of doped ions are strictly monitored, and the normal operation of a semiconductor device can be ensured.
The method for monitoring the ion implantation quality can be divided into two methods according to the difference of implanted ions, wherein one method is to adopt a four-probe tester to measure the square resistance (Rs) of an ion implantation layer of a wafer, is mainly suitable for the ion implantation of III and V main group elements such as boron, phosphorus and the like, and can replace the position of a silicon atom in a crystal lattice after the ion implantation, so that carriers such as holes (III main group elements such as boron and the like) or electrons (V main group elements such as phosphorus and the like) can be provided, the resistance of a test silicon wafer is changed, and the change of the ion implantation dosage and the change of the implantation angle can be indirectly monitored by monitoring the change of the resistance. The method has high monitoring sensitivity.
However, not all ion implantations can be monitored for the quality of the ion implantation by the above-described methods, such as germanium, carbon, and other group iv elements, which cannot provide carriers such as holes or electrons, and therefore the Rs monitoring method is not suitable for monitoring the ion implantation of the group iv element.
Then, a second Thermal Wave (TW) monitoring method is proposed for monitoring ion implantation of the group iv element. The action principle is as follows: when laser irradiates a silicon substrate, a thermal wave diffusion phenomenon can be generated, and the diffused thermal wave is blocked by lattice defects caused by ion implantation in the silicon substrate, so that the local heat density of the region is higher than that of other regions, the silicon surface of the region is subjected to thermal expansion, the curvature of the silicon surface of the region is changed, and the damage degree of the lattice can be indirectly obtained by measuring and detecting the change of the reflectivity of the laser. Since the damage degree of crystal lattice is related to the ion implantation dosage, the ion implantation quality of IV main group elements such as germanium and carbon can be indirectly monitored by a thermal wave method. However, over time, the surface of the silicon substrate is repaired to cause inaccurate detection data, and the sensitivity of the detection method is not high, so that the requirement of advanced process on monitoring the ion implantation quality is more and more difficult to meet.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a method for monitoring the Ge ion implantation quality.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a method for monitoring the quality of Ge ion implantation comprises the following steps:
step S01: providing a test sample;
step S02: selecting As ions with the same atomic mass As the Ge ions to be monitored to replace the Ge ions, keeping the other injection conditions unchanged, and performing ion injection on the test sample;
step S03: performing high-temperature annealing on the test sample subjected to the ion implantation in the step S02;
step SO 4: measuring the sheet resistance of the ion implantation layer of the test sample after the step S03 is completed;
step S05: and judging the As ion implantation quality with the same atomic mass As the Ge ion to be monitored according to the measurement result of the square resistance, which is equivalent to judging the Ge ion implantation quality to be monitored.
Preferably, in step S04, the sheet resistance is measured using a four-probe tester.
Preferably, in step S02, the test sample is ion-implanted by an ion implanter.
Preferably, the ion implanter is a medium current ion implanter, or a high energy ion implanter.
Preferably, in step S02, the Ge ions to be monitored are 70Ge, or 72Ge, or 73Ge, or 74Ge, or 76 Ge.
Preferably, in step S02, the As ions are 70As, 72As, 73As, 74As, or 76 As.
Preferably, in step S02, the As ions are implanted at an energy of 10 to 50 KeV.
Preferably, in step S02, the As ions are implanted at a dose of 0.5E 15-5E 15ions/cm2。
Preferably, in step S03, a rapid thermal processing process is used for high temperature annealing. ' Qiyi
Preferably, in step S01, the test sample is a P-type (110) silicon wafer.
According to the technical scheme, the As ions with the same atomic mass As the Ge ions to be monitored are selected to replace the Ge ions, the rest implantation conditions are kept unchanged, the ion implantation is carried out on the test sample, the sheet resistance of the As ion implantation layer is measured by adopting the four-probe tester, and due to the fact that the atomic mass is the same, the path passing through the magnetic field analyzer in the ion implanter is the same As the acceleration path, and therefore, when the rest implantation conditions are the same, the depth and the angle of the ion implantation also need to be the same. Therefore, the Ge ion implantation quality can be monitored by adopting an Rs monitoring method with higher monitoring sensitivity, and the requirement of advanced process on monitoring of the Ge ion implantation quality is met. Therefore, the invention has remarkable characteristics.
Drawings
FIG. 1 is a flow chart of a method of monitoring Ge ion implantation quality in accordance with the present invention;
FIG. 2 is a schematic diagram of the path of ions of the same atomic mass through a magnetic field analyzer;
FIG. 3 is a graph showing the sensitivity of monitoring using the Rs monitoring method;
fig. 4 is a diagram showing monitoring sensitivity by the TW monitoring method.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, please refer to fig. 1, in which fig. 1 is a flowchart illustrating a method for monitoring Ge ion implantation quality according to the present invention. As shown in fig. 1, a method for monitoring Ge ion implantation quality of the present invention includes the following steps:
step S01: a test sample is provided.
The ion implantation process is generally applied to the processes of well implantation, lightly doped source drain, heavily doped source drain and the like, the test sample is determined by a specific process, and in the embodiment, the test sample is a P-type (110) silicon wafer.
Step S02: and selecting As ions with the same atomic mass As the Ge ions to be monitored to replace the Ge ions, keeping the other injection conditions unchanged, and performing ion injection on the test sample.
Specifically, the test sample is ion-implanted using an ion implanter. Ion implanters are equipment used in ion implantation processes and are an integration of multiple, extremely complex and sophisticated subsystems. Commonly used ion implanters may include medium current ion implanters, high current ion implanters, and high energy ion implanters. The test sample is placed in an ion implanter, and implantation conditions, for example, an ion source for ion implantation, an ion implantation dose, an ion implantation angle, and the like are set. Since the atomic mass is the same, the path through the magnetic field analyzer and the acceleration path are the same in the ion implanter, and therefore, the depth and angle of ion implantation should be the same when the remaining implantation conditions are the same. By using the principle, assuming that the implantation quality of germanium ions (74Ge) with the atomic mass of 74 needs to be monitored, since the germanium ion implantation cannot be monitored by adopting the Rs monitoring method, 74As with the same atomic mass As 74Ge is selected to replace 74Ge As an ion source, and the ion implantation is performed on the test sample. Preferably, the energy of the 74As implantation is 10 to 50KeV, and the implantation dose is 0.5E15 to 5E15ions/cm2. The naturally occurring germanium element has five isotopes, 70Ge, 72Ge, 73Ge, 74Ge and 76Ge, and when ion implantation quality monitoring is performed on the same, As ions of the same atomic mass As the isotopes, namely 70As, 72As, 73As, 74As and 76As, can be selected.
Step S03: the test sample subjected to ion implantation in step S02 is subjected to high-temperature annealing.
Specifically, a rapid thermal processing process may be used to perform a high temperature annealing process to form a stable doped structure on the surface of the sample to be tested. The parameters of the rapid thermal processing process are specifically determined according to different processes and monitoring requirements.
Step SO 4: the sheet resistance of the ion implantation layer of the test sample that completed step S03 was measured.
Specifically, the square resistance (Rs) of the stable structure obtained in step S03 is measured using a four-probe tester, i.e., Rs monitoring. The Rs monitoring method is high in monitoring sensitivity and can meet the requirement of advanced technology on monitoring of ion implantation quality.
Step S05: and judging the As ion implantation quality with the same atomic mass As the Ge ion to be monitored according to the measurement result of the square resistance, which is equivalent to judging the Ge ion implantation quality to be monitored.
In this step, since ion implantation is performed using As ions, the sheet resistance value of the As ion implanted layer is directly obtained. However, since the atomic mass is the same, the path through the magnetic field analyzer and the acceleration path are the same in the ion implanter, and therefore, the depth and angle of the ion implantation should be the same when the remaining implantation conditions are the same. Therefore, the monitoring result is equivalent to judging the implantation quality of the monitored Ge ions.
The Rs monitoring method is proved to have higher monitoring sensitivity than the TW monitoring method through several sets of experimental data.
For the Rs monitoring method, the tested sample is placed in a high-current ion implanter, the ion source adopts 74As, 74As ions with different dosages are respectively adopted, the multiple tested samples are respectively implanted with ions, the rest implantation conditions are the same, the implantation energy is 20KeV, and the dosages are respectively 9E14ions/cm2，1E15ions/cm2，1.1E15ions/cm2The sheet resistance of the ion implanted layer was measured by the deflection angles Tilt7, twist22, and rotation4, respectively, in the implanted wafer. A linear relationship with respect to dose-resistance is obtained by fitting, and the slope of the linear equation reflects the sensitivity of the monitoring method, as shown in fig. 3.
For the TW monitoring method, the sample to be measured was placed in a high current ion implanter, 74Ge was used as the ion source, and the remaining implantation conditions were the same as the Rs monitoring method, i.e., the implantation energies were all 20KeV, and the doses were 9E14ions/cm, respectively2，1E15ions/cm2，1.1E15ions/cm2The TW test was performed on the wafers implanted at Tilt7, twist22, rotation4, respectively. A linear relationship with respect to dose-thermal wave was obtained by fitting, and the slope of the linear equation reflects the sensitivity of the monitoring method, as shown in fig. 4.
From the above experimental results, it is clear that: the sensitivity of the Rs monitoring method is about 200 times that of the TW monitoring method. Therefore, the monitoring sensitivity of the invention is greatly improved, and the monitoring requirement of the advanced process on the ion implantation quality can be met.
In summary, in the present invention, As ions having the same atomic mass As the monitored Ge ions are selected to replace the Ge ions, the remaining implantation conditions are kept unchanged, ion implantation is performed on the test sample, and the sheet resistance of the As ion implantation layer is measured by using a four-probe tester. Therefore, the Ge ion implantation quality can be monitored by adopting an Rs monitoring method with higher monitoring sensitivity, and the requirement of advanced process on monitoring of the Ge ion implantation quality is met.
The above description is only for the preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all the equivalent structural changes made by using the contents of the description and the drawings of the present invention should be included in the scope of the present invention.
Claims (9)
1. A method for monitoring the quality of Ge ion implantation is characterized by comprising the following steps:
step S01: providing a test sample, wherein the test sample is a P-type (110) silicon wafer;
step S02: selecting As ions with the same atomic mass As the Ge ions to be monitored to replace the Ge ions, keeping the other injection conditions unchanged, and performing ion injection on the test sample;
step S03: performing high-temperature annealing on the test sample subjected to the ion implantation in the step S02;
step S04: measuring the sheet resistance of the ion implantation layer of the test sample after the step S03 is completed;
step S05: and judging the As ion implantation quality with the same atomic mass As the Ge ion to be monitored according to the measurement result of the square resistance, which is equivalent to judging the Ge ion implantation quality to be monitored.
2. The method of claim 1, wherein in step S04, a four-probe tester is used to measure the sheet resistance.
3. The method of claim 1, wherein in step S02, the test sample is ion implanted by an ion implanter.
4. The method of claim 3, wherein the ion implanter is a medium current ion implanter, a high current ion implanter, or a high energy ion implanter.
5. The method of claim 1, wherein in step S02, the monitored Ge ions are 70Ge, 72Ge, 73Ge, 74Ge, or 76 Ge.
6. The method of claim 1, wherein in step S02, the As ions are 70As, 72As, 73As, 74As, or 76 As.
7. The method of claim 1, wherein in step S02, the As ions are implanted at an energy of 10 to 50 KeV.
8. The method of claim 1, wherein in step S02, the As ion implantation dosage is 0.5E 15-5E 15ions/cm2。
9. The method of claim 1, wherein in step S03, a rapid thermal process is used for high temperature annealing.
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