CN106898546A - A kind of method of monitoring Ge ion implanting quality - Google Patents
A kind of method of monitoring Ge ion implanting quality Download PDFInfo
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- CN106898546A CN106898546A CN201710146467.0A CN201710146467A CN106898546A CN 106898546 A CN106898546 A CN 106898546A CN 201710146467 A CN201710146467 A CN 201710146467A CN 106898546 A CN106898546 A CN 106898546A
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- Prior art keywords
- ion implanting
- ion
- monitoring
- quality
- ions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
Abstract
The invention discloses a kind of method of monitoring Ge ion implanting quality, one test sample is provided first, secondly selection replaces Ge ions with the As ions of monitored Ge ions same atoms quality, keep remaining injection condition constant, ion implanting is carried out to test sample, then after after high annealing, measure the square resistance of ion implanted layer, measuring value result according to square resistance, pair judge with the As ion implanting quality of monitored Ge ions same atoms quality, be equivalent to and monitored Ge ion implanting quality is judged.Because atomic mass is identical, cause it also identical by magnetic field analyzer path and acceleration path in ion implantation apparatus, so that, when remaining injection condition is identical, the depth and angle of ion implanting should also be equal to.It is therefore possible to use monitoring sensitivity Rs monitoring methods higher are monitored to Ge ion implanting quality, monitoring requirements of the advanced technologies to Ge ion implanting quality are met.
Description
Technical field
The present invention relates to a kind of ion implantation technique of technical field of manufacturing semiconductors, monitored more particularly, to one kind
The method of Ge ion implanting quality.
Background technology
Ion implantation technique be IC manufacturing key before operation, be by ion gun produce ion by accelerate into
Enter the surface of solids, interatomic collisions realize doping, ultimately form the required various transistors for reaching.
Impurity doping changes semiconductor surface carrier concentration and conduction type, so to the ion implanting depth adulterated
Degree, implant angle and implantation dosage should all carry out strict monitoring, just can guarantee that semiconductor devices normally runs.
To the monitoring method of ion implanting quality, according to the difference of injection ion, two methods, a kind of method can be divided into
It is the square resistance (Rs) that wafer ion implanted layer is measured using four-point probe, is primarily suitable for the master of boron, phosphorus etc. the III, the V
The ion implanting of race's element, can replace position of the silicon atom in lattice after ion implanting, such that it is able to provide hole (boron etc.
Group-III) or the carrier such as electronics (main group of phosphorus etc. the Vth), change the resistance of test silicon wafer, by the change of monitoring resistor
Change, can be with the change of indirect monitoring ion implantation dosage and implant angle.The sensitivity of this kind of method monitoring is higher.
But, not all ion implanting can be transferred through the above method and carry out the monitoring of ion implanting quality, for example
The major element of germanium, carbon etc. the IVth, such ion implanting can not provide the carriers such as hole or electronics, so, Rs monitoring methods pair
Do not applied in the monitoring of the ion implanting of the IVth major element.
Then, for the IVth major element ion implanting monitoring, it is proposed that second heat wave (TW) monitoring method.Its
Action principle is：When laser is irradiated on silicon substrate, heat wave diffusion phenomena can be produced, and this diffusion heat wave will be by silicon substrate
Lattice defect as caused by ion implanting is stopped that the local heat density that can make the region is higher than other regions so that the area
There is thermal expansion in the silicon face in domain, so that the silicon face curvature in the region changes, by measuring the anti-of exploring laser light
The change of rate is penetrated, the destructiveness of lattice can be indirectly obtained.Because the destructiveness of lattice is related to ion implantation dosage, institute
Can indirectly monitor the ion implanting quality of the major element of germanium, carbon etc. the IVth by heat wave method.But, over time
Passage, surface of silicon reparation causes prohibited data detection really, and the sensitivity of this detection method is not high, therefore, it is increasingly difficult to
Meet monitoring requirements of the advanced technologies to ion implanting quality.
The content of the invention
It is an object of the invention to the drawbacks described above for overcoming prior art to exist, there is provided one kind monitoring Ge ion implanting quality
Method, by selecting to replace Ge ions with the As ions of monitored Ge ions same atoms quality, using four-point probe
The square resistance of As ion implanted layers is measured, is equivalent to and monitored Ge ion implanting quality is monitored, so as to improve prison
Control sensitivity, meets monitoring requirements of the advanced technologies to Ge ion implanting quality.
To achieve the above object, technical scheme is as follows：
A kind of method of monitoring Ge ion implanting quality, comprises the following steps：
Step S01：One test sample is provided；
Step S02：Select to replace Ge ions with the As ions of monitored Ge ions same atoms quality, keep remaining to inject
Condition is constant, and ion implanting is carried out to test sample；
Step S03：Test sample to completing ion implanting in step S02 carries out high annealing；
Step SO4：Measure the square resistance of the ion implanted layer of the test sample for completing step S03；
Step S05：Measuring value result according to square resistance, the As ions pair with monitored Ge ions same atoms quality
Implantation quality is judged, is equivalent to and monitored Ge ion implanting quality is judged.
Preferably, in step S04, square resistance is measured using four-point probe.
Preferably, in step S02, ion implanting is carried out to test sample using ion implantation apparatus.
Preferably, the ion implantation apparatus is medium current ion implanter, or high current ion implantation apparatus, or energetic ion
Implanter.
Preferably, in step S02, the Ge ions that are monitored are for 70Ge, or 72Ge, or 73Ge, or 74Ge, or 76Ge.
Preferably, in step S02, the As ions are 70As, or 72As, or 73As, or 74As, or 76As.
Preferably, in step S02, the energy during As ion implantings is 10~50KeV.
Preferably, in step S02, the dosage during As ion implantings is 0.5E15~5E15ions/cm2。
Preferably, in step S03, high annealing is carried out using quick thermal treatment process.`
Preferably, in step S01, the test sample is p-type (110) silicon wafer.
From above-mentioned technical proposal as can be seen that the present invention by selection and the As of monitored Ge ions same atoms quality from
Ge ions are replaced in filial generation, keep remaining injection condition constant, and ion implanting is carried out to test sample, are measured using four-point probe
The square resistance of As ion implanted layers, because atomic mass is identical, passes through magnetic field analyzer path and adds in ion implantation apparatus
Fast path is identical, therefore, when remaining injection condition is identical, the depth and angle of ion implanting should also be equal to.So as to,
Ge ion implanting quality can be monitored using monitoring sensitivity Rs monitoring methods higher, meet advanced technologies to Ge from
The monitoring requirements of sub- implantation quality.Therefore, the present invention has distinguishing feature.
Brief description of the drawings
Fig. 1 is a kind of method flow diagram of monitoring Ge ion implanting quality of the invention；
Fig. 2 is the ion of same atoms quality by the path schematic diagram of magnetic field analyzer；
Fig. 3 is the schematic diagram using the monitoring sensitivity of Rs monitoring methods；
Fig. 4 is the schematic diagram using the monitoring sensitivity of TW monitoring methods.
Specific embodiment
Below in conjunction with the accompanying drawings, specific embodiment of the invention is described in further detail.
It should be noted that in following specific embodiments, when embodiments of the present invention are described in detail, in order to clear
Ground represents structure of the invention in order to illustrate, spy, not according to general scale, and has carried out part to the structure in accompanying drawing
Amplifying, deform and simplify treatment, therefore, should avoid being understood in this, as limitation of the invention.
In specific embodiment of the invention below, Fig. 1 is referred to, Fig. 1 is a kind of monitoring Ge ions note of the invention
Enter the method flow diagram of quality.As shown in figure 1, a kind of method of monitoring Ge ion implanting quality of the invention, including following step
Suddenly：
Step S01：One test sample is provided.
Ion implantation technology be commonly used to trap injection, be lightly doped in the techniques such as source and drain, heavy doping source and drain, test sample by
Concrete technology determines that in the present embodiment, test sample is p-type (110) silicon wafer.
Step S02：Select to replace Ge ions with the As ions of monitored Ge ions same atoms quality, keep remaining to inject
Condition is constant, and ion implanting is carried out to test sample.
Specifically, ion implanting is carried out to test sample using ion implantation apparatus.Ion implantation apparatus is for ion implanting
The equipment of technique, is the integrated of multiple extremely complex accurate subsystems.Conventional ion implantation apparatus may include middle current ion
Implanter, high current ion implantation apparatus and high energy implanters.Test sample is put into ion implantation apparatus, to its injection condition
Set, for example, being set to the ion gun for ion implanting, ion implantation dosage and ion implantation angle etc..By
It is identical in atomic mass, it is identical with acceleration path by magnetic field analyzer path in ion implantation apparatus, therefore, in remaining injection
When condition is identical, the depth and angle of ion implanting should also be equal to.Using the principle, it is assumed that need to monitor atomic mass
It is the implantation quality of 74 germanium ion (74Ge), due to that can not be monitored to germanium ion injection using Rs monitoring methods, therefore
Selection replaces 74Ge as ion gun with the 74As of 74Ge same atoms quality, and ion implanting is carried out to test sample.Preferably,
Energy when 74As injects is 10~50KeV, and implantation dosage is 0.5E15~5E15ions/cm2.Naturally occurring Ge element has
Five isotopes, respectively 70Ge, 72Ge, 73Ge, 74Ge and 76Ge, when ion implanting quality monitoring is carried out to it, can be with
Select the As ions of same atomic mass, i.e. 70As, 72As, 73As, 74As, 76As.
Step S03：Test sample to completing ion implanting in step S02 carries out high annealing.
Specifically, high annealing can be carried out using quick thermal treatment process, stabilization is formed with tested sample surface
Doped structure.The parameter of quick thermal treatment process is specifically determined according to different process and monitoring needs.
Step SO4：Measure the square resistance of the ion implanted layer of the test sample for completing step S03.
Specifically, the square resistance (Rs) of the rock-steady structure for being obtained using four-point probe measurement step S03, i.e. Rs prisons
Control.The monitoring sensitivity of Rs monitoring methods is higher, disclosure satisfy that monitoring requirements of the advanced technologies to ion implanting quality.
Step S05：Measuring value result according to square resistance, the As ions pair with monitored Ge ions same atoms quality
Implantation quality is judged, is equivalent to and monitored Ge ion implanting quality is judged.
In this step, due to carrying out ion implanting using As ions, therefore, what is directly obtained is As ion implanted layers
Square resistance.But, because atomic mass is identical, magnetic field analyzer path and acceleration path phase are passed through in ion implantation apparatus
Together, therefore, when remaining injection condition is identical, the depth and angle of ion implanting should also be equal to.Therefore, monitored results
Be equivalent to is that monitored Ge ion implanting quality is judged.
Prove that Rs monitoring methods have monitoring sensitivity higher compared with TW monitoring methods below by several groups of experimental datas.
For Rs monitoring methods, tested sample is put into high current ion implantation apparatus, ion gun uses 74As, is respectively adopted
Multiple tested samples are carried out ion implanting by the 74As ions of various dose respectively, and remaining injection condition is identical, and Implantation Energy is all
It is 20KeV, dosage is respectively 9E14ions/cm2, 1E15ions/cm2, 1.1E15ions/cm2, deflection angle in injection chip
Tilt7, twist22, rotation4, the square resistance of difference test ion implanted layer.Obtained on dosage-electricity by fitting
The linear relationship of resistance, as shown in figure 3, the slope of the linear equation reflects the sensitivity of the monitoring method.
For TW monitoring methods, tested sample is put into high current ion implantation apparatus, ion gun uses 74Ge, remaining injection
Condition is identical with Rs monitoring methods, i.e., Implantation Energy is all 20KeV, and dosage is respectively 9E14ions/cm2, 1E15ions/cm2,
1.1E15ions/cm2, deflection angle Tilt7, twist22, rotation4 in injection chip carry out TW tests respectively.Pass through
Fitting obtains the linear relationship on dosage-heat wave, as shown in figure 4, the slope of the linear equation reflects the monitoring method
Sensitivity.
From above-mentioned experimental result, here it is apparent that：The sensitivity of Rs monitoring methods is about 200 times of TW monitoring methods.
Therefore, monitoring sensitivity of the invention is greatly improved, and disclosure satisfy that monitoring of the advanced technologies to ion implanting quality is needed
Ask.
In sum, the present invention replaces Ge ions by selection with the As ions of monitored Ge ions same atoms quality,
Keep remaining injection condition constant, ion implanting is carried out to test sample, As ion implanted layers are measured using four-point probe
Square resistance, because atomic mass is identical, in ion implantation apparatus by magnetic field analyzer path it is identical with acceleration path, because
This, when remaining injection condition is identical, the depth and angle of ion implanting should also be equal to.It is thus possible to using monitoring
Sensitivity Rs monitoring methods higher are monitored to Ge ion implanting quality, meet advanced technologies to Ge ion implanting quality
Monitoring requirements.
Above-described is only the preferred embodiments of the present invention, and the embodiment simultaneously is not used to limit patent guarantor of the invention
Shield scope, therefore every equivalent structure change made with specification of the invention and accompanying drawing content, similarly should be included in
In protection scope of the present invention.
Claims (10)
1. a kind of method of monitoring Ge ion implanting quality, it is characterised in that comprise the following steps：
Step S01：One test sample is provided；
Step S02：Select to replace Ge ions with the As ions of monitored Ge ions same atoms quality, keep remaining injection condition
It is constant, ion implanting is carried out to test sample；
Step S03：Test sample to completing ion implanting in step S02 carries out high annealing；
Step SO4：Measure the square resistance of the ion implanted layer of the test sample for completing step S03；
Step S05：Measuring value result according to square resistance, the As ion implantings pair with monitored Ge ions same atoms quality
Quality is judged, is equivalent to and monitored Ge ion implanting quality is judged.
2. a kind of method of monitoring Ge ion implanting quality according to claim 1, it is characterised in that the step S04
In, square resistance is measured using four-point probe.
3. a kind of method of monitoring Ge ion implanting quality according to claim 1, it is characterised in that the step S02
In, ion implanting is carried out to test sample using ion implantation apparatus.
4. a kind of method of monitoring Ge ion implanting quality according to claim 3, it is characterised in that the ion implanting
Machine is medium current ion implanter, or high current ion implantation apparatus, or high energy implanters.
5. a kind of method of monitoring Ge ion implanting quality according to claim 1, it is characterised in that the step S02
In, the monitored Ge ions are 70Ge, or 72Ge, or 73Ge, or 74Ge, or 76Ge.
6. a kind of method of monitoring Ge ion implanting quality according to claim 1, it is characterised in that the step S02
In, the As ions are 70As, or 72As, or 73As, or 74As, or 76As.
7. a kind of method of monitoring Ge ion implanting quality according to claim 1, it is characterised in that the step S02
In, the energy during As ion implantings is 10~50KeV.
8. a kind of method of monitoring Ge ion implanting quality according to claim 1, it is characterised in that the step S02
In, the dosage during As ion implantings is 0.5E15~5E15ions/cm2。
9. a kind of method of monitoring Ge ion implanting quality according to claim 1, it is characterised in that the step S03
In, high annealing is carried out using quick thermal treatment process.
10. a kind of method of monitoring Ge ion implanting quality according to claim 1, it is characterised in that the step S01
In, the test sample is p-type (110) silicon wafer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109633734A (en) * | 2018-12-24 | 2019-04-16 | 上海集成电路研发中心有限公司 | A kind of device and method detecting neutron content in ion implanting chamber |
| CN111103460A (en) * | 2018-10-25 | 2020-05-05 | 株洲中车时代电气股份有限公司 | Method for improving accuracy of four-probe RS test |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111103460A (en) * | 2018-10-25 | 2020-05-05 | 株洲中车时代电气股份有限公司 | Method for improving accuracy of four-probe RS test |
| CN111103460B (en) * | 2018-10-25 | 2021-03-16 | 株洲中车时代半导体有限公司 | Method for improving accuracy of four-probe RS test |
| CN109633734A (en) * | 2018-12-24 | 2019-04-16 | 上海集成电路研发中心有限公司 | A kind of device and method detecting neutron content in ion implanting chamber |
| CN109633734B (en) * | 2018-12-24 | 2023-01-31 | 上海集成电路研发中心有限公司 | Device and method for detecting neutron content in ion implantation cavity |
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