CN109633734A - A kind of device and method detecting neutron content in ion implanting chamber - Google Patents
A kind of device and method detecting neutron content in ion implanting chamber Download PDFInfo
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- CN109633734A CN109633734A CN201811582671.8A CN201811582671A CN109633734A CN 109633734 A CN109633734 A CN 109633734A CN 201811582671 A CN201811582671 A CN 201811582671A CN 109633734 A CN109633734 A CN 109633734A
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- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
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Abstract
The invention discloses a kind of devices of neutron content in detection ion implanting chamber, including ion implanting chamber, ion source, data collection module and processing module, placement surface is coated with the substrate of photoresist in the ion implanting chamber, the ion source carries out ion implanting to the photoresist in the substrate, C in the neutron and photoresist generated in ion implantation process, H, the atom nuclear interaction of O element, generate gamma-rays, the data collection module is for measuring gamma-ray intensity in the ion implanting chamber, and the intensity is transmitted to the processing module, the processing module calculates the neutron content generated in ion implantation process according to gamma-ray intensitometer.The device and method of neutron content, by measuring the intensity of Υ ray, and then can measure the neutron content generated in energetic ion injection process in a kind of detection ion implanting chamber provided by the invention.
Description
Technical field
The present invention relates to integrated circuit technology designs, and in particular to a kind of device for detecting neutron content in ion implanting chamber
And method.
Background technique
With the continuous development of semiconductor technology, the effect of ion implantation technique in integrated circuit fabrication is increasingly heavier
It wants.Ion implantation apparatus is the key equipment before IC manufacturing in process, and ion implanting is to semiconductor surface near zone
The technology being doped, the purpose is to change the carrier concentration of semiconductor and conduction type, wherein high energy implanters are
The best method adulterated deeply.The particle accelerator of high energy implanters mainly includes that radio frequency accelerates to accelerate with electrostatic, from
Son realizes the ray externally emitted while acceleration to the person and environmental danger, such as ray in systems.So daily
Will χ ray to implanter detect, but for extrahigh energy implanter, need to generate divalent, trivalent even 4 valences
Ion, during this generate χ ray while can generate neutron, however neutron neutral, therefore penetrating object
When, the effect of electronics Coulomb force does not occur with the electron outside nucleus of atom, so as to pass easily through electronic shell, directly hits atom
Core and nuclear reaction occurs, to make some metal materials such as aluminium of implanter, lead be easy for it is breakdown, to cause to hurt
Evil；Simultaneously because neutron itself is not charged, the effects of ionizing will not be caused, direct observable effects cannot be generated, be difficult to use
Conventional means detect.
Therefore, it is necessary to the detection method of neutron in reliable high energy implanters be taken, to week when anti-locking system works
The staff enclosed damages, and is formed and is polluted to environment.
Summary of the invention
The object of the present invention is to provide a kind of device and method of neutron content in detection ion implanting chamber, by high energy
Ion bombardment photoresist, wherein C in neutron and photoresist, H, the atom nuclear interaction of the elements such as O generate a large amount of Υ and penetrate
Line, by measuring the intensity of these Υ rays, and then can measure the neutron content generated in energetic ion injection process.
To achieve the goals above, the present invention adopts the following technical scheme: neutron content in a kind of detection ion implanting chamber
Device, including ion implanting chamber, ion source, data collection module and processing module, the ion source is used for the ion
It injects chamber and carries out ion implanting, the data collection module connects the ion implanting chamber, processing module and ion source simultaneously；
Placement surface is coated with the substrate of photoresist in the ion implanting chamber, and the ion source emits ion beam, to described
Photoresist in substrate carries out ion implanting, the atom of C, H, O element in the neutron and photoresist generated in ion implantation process
Nuclear interaction generates Υ ray, and the data collection module is used to measure the intensity of Υ ray in the ion implanting chamber, and
The intensity of Υ ray is transmitted to the processing module, the processing module calculates ion implanting mistake according to the intensitometer of Υ ray
The neutron content generated in journey.
Further, the photoresist with a thickness of 6-10 microns.
Further, the energy of used ion beam is greater than when the ion source carries out ion implanting to photoresist
3MeV。
The method of neutron content, includes the following steps: in a kind of detection ion implanting chamber provided by the invention
S01: a layer photoresist is applied on substrate, and the substrate is put into ion implanting chamber；
S02: ion implanting, ion implanting are carried out using photoresist of the ion source to substrate surface in the ion implanting chamber
The atom nuclear interaction of C, H, O element in the neutron and photoresist generated in the process generates Υ ray；
S03: the intensity of Υ ray in the ion implanting chamber is measured using data collection module, and the intensity is transmitted to
Processing module；
S04: the processing module calculates the neutron generated in ion implantation process according to the intensitometer of above-mentioned Υ ray and contains
Amount.
Further, the intensity of the Υ ray is less than or equal to 0.6uSv/h.
Further, the step S02 intermediate ion source to the photoresist of substrate surface in the ion implanting chamber carry out from
The energy of used ion beam is greater than 3MeV when son injection.
Further, the photoresist with a thickness of 6-10 microns.
The invention has the benefit that the present invention utilizes in energetic ion injection process, a large amount of particle bombardment photoresists,
Wherein neutron is to C, and the absorption coefficient of the elements such as H, O is big, and the particles such as proton do not absorb, when neutron and C, the original of the elements such as H, O
When daughter nucleus interacts, it may occur that inelastic scattering generates a large amount of Υ ray, these Υ ray energies are high, generate section compared with
Greatly, it is easy to measure, and intensity and C, the content of H, O are directly proportional.By measuring the intensity of these Υ rays, and then can measure
The neutron content generated in energetic ion injection process.The present invention solves other methods and is unable to measure energetic ion injection generation
The problem of neutron, and this covering device structure is simple, and measuring system composition instrument is simple, and cost is relatively low.
Detailed description of the invention
Attached drawing 1 is the structural schematic diagram of neutron content device in a kind of detection ion implanting chamber of the present invention.
In figure: 100 substrates, 102 photoresists, 200 ion implanting chambers.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, with reference to the accompanying drawing to specific reality of the invention
The mode of applying is described in further detail.
As shown in Fig. 1, a kind of device detecting neutron content in ion implanting chamber provided by the invention, including ion note
Entering chamber 200, ion source, data collection module and processing module, ion source is used to carry out ion implanting to ion implanting chamber 200,
Data collection module connects ion implanting chamber and processing module simultaneously.Wherein, substrate can be silicon substrate, coat on silicon substrate
Photoresist layer with a thickness of 6-10 microns；The energy of used ion beam is greater than when ion source is to photoresist progress ion implanting
3MeV。
Placement surface is coated with the substrate 100 of photoresist 101 in ion implanting chamber 200, and ion source emits ion beam, to substrate
In photoresist 101 carry out ion implanting, the atomic nucleus of C, H, O element in the neutron and photoresist generated in ion implantation process
Interaction generates Υ ray, and data collection module is used to measure the intensity of Υ ray in ion implanting chamber, and the intensity is passed
Processing module is transported to, processing module calculates the neutron content generated in ion implantation process according to the intensitometer of Υ ray.
Wherein, neutron is to C, and the absorption coefficient of the elements such as H, O is big, and the particles such as proton do not absorb, as neutron and C, H, O etc.
When the atom nuclear interaction of element, it may occur that inelastic scattering generates a large amount of Υ ray, these Υ ray energies are high, produces
Raw section is larger, is easy to measure, and intensity and C, the content of H, O are directly proportional.The Υ that data collection module measures in the present invention
The intensity of ray includes the intensity of Υ ray, and due to the intensity and C, the content of H, O and the content of neutron are directly proportional, processing
Module can calculate the content of neutron in ion implanting chamber according to the intensitometer of Υ ray.
The method of neutron content, includes the following steps: in a kind of detection ion implanting chamber provided by the invention
S01: a layer photoresist is applied on substrate, and the substrate is put into ion implanting chamber.Wherein, substrate can be silicon
Substrate, the photoresist layer coated on silicon substrate with a thickness of 6-10 microns.
S02: ion implanting, ion implantation process are carried out using photoresist of the ion source to substrate surface in ion implanting chamber
The atom nuclear interaction of C, H, O element in the neutron and photoresist of middle generation generates Υ ray.Wherein, ion source is to photoetching
The energy that glue carries out used ion beam when ion implanting is greater than 3MeV, and Υ ray energy is high, and generation section is larger, is easy to survey
Amount, and intensity and C, the content of H, O are directly proportional.
S03: using the intensity of Υ ray in data collection module measurement ion implanting chamber, and the intensity is transmitted to processing
Module.
The intensity of measured Υ ray is less than or equal to 0.6uSv/h in the present invention, when the intensity of Υ ray is greater than the numerical value
When, illustrate that the implanter goes wrong, be unsatisfactory for SEMI standard, needs to detect whether again again after overhauling to meet to make
Use standard.
Specifically, in ion implantation process, a given threshold is determined in advance, as the Υ that data collection module measures
When the intensity of ray is more than or equal to given threshold, ion source stops ion implanting, and the range of given threshold is 0.4-0.6uSv/h.
When the intensity of the Υ ray measured is more than or equal to given threshold, receipt collection module issues alarm signal or stops letter
Number, so that ion source stops injection work.
S04: processing module calculates the neutron content generated in ion implantation process according to the intensitometer of above-mentioned Υ ray.Its
In, due to the intensity and C of Υ ray, the content of H, O and the content of neutron are directly proportional, and processing module can be according to Υ ray
Intensitometer calculate ion implanting chamber in neutron content.
The present invention utilizes in energetic ion injection process, and a large amount of particle bombardment photoresists, wherein neutron is to C, the members such as H, O
The absorption coefficient of element is big, and the particles such as proton do not absorb, and when neutron and C, the atom nuclear interaction of the elements such as H, O, can send out
Raw inelastic scattering, generates a large amount of Υ ray, these Υ ray energies are high, and it is larger to generate section, is easy to measure, and intensity and
The content of C, H, O are directly proportional.By measuring the intensity of these Υ rays, and then it can measure and be produced in energetic ion injection process
Raw neutron content.The present invention solves the problems, such as that other methods are unable to measure energetic ion injection and generate neutron, and this set
Apparatus structure is simple, and measuring system composition instrument is simple, and cost is relatively low.
The above description is only a preferred embodiment of the present invention, and the embodiment is not intended to limit patent protection of the invention
Range, thus it is all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, it similarly should be included in this
In the protection scope of invention appended claims.
Claims (7)
1. the device of neutron content in a kind of detection ion implanting chamber, which is characterized in that including ion implanting chamber, ion source, number
According to collection module and processing module, the ion source is used to carry out ion implanting, the data collection to the ion implanting chamber
Module connects the ion implanting chamber and ion source simultaneously；
Placement surface is coated with the substrate of photoresist in the ion implanting chamber, and the ion source emits ion beam, to the substrate
In photoresist carry out ion implanting, the atom nuclear phase of C, H, O element in the neutron and photoresist generated in ion implantation process
Interaction, generates Υ ray, and the data collection module is used to measure the intensity of Υ ray in the ion implanting chamber, and by Υ
The intensity of ray is transmitted to the processing module, and the processing module calculates in ion implantation process according to the intensitometer of Υ ray
The neutron content of generation.
2. the device of neutron content in a kind of detection ion implanting chamber according to claim 1, which is characterized in that the light
Photoresist with a thickness of 6-10 microns.
3. it is according to claim 1 it is a kind of detection ion implanting chamber in neutron content device, which is characterized in that it is described from
The energy of used ion beam is greater than 3MeV when component is to photoresist progress ion implanting.
4. a kind of method of neutron content in detection ion implanting chamber, which comprises the steps of:
S01: a layer photoresist is applied on substrate, and the substrate is put into ion implanting chamber；
S02: ion implanting, ion implantation process are carried out using photoresist of the ion source to substrate surface in the ion implanting chamber
The atom nuclear interaction of C, H, O element in the neutron and photoresist of middle generation generates Υ ray；
S03: the intensity of Υ ray in the ion implanting chamber is measured using data collection module, and the intensity is transmitted to processing
Module；
S04: the processing module calculates the neutron content generated in ion implantation process according to the intensitometer of above-mentioned Υ ray.
5. detecting the method for neutron content in ion implanting chamber according to claim 4, which is characterized in that the Υ ray
Intensity is less than or equal to 0.6uSv/h.
6. detecting the method for neutron content in ion implanting chamber according to claim 4, which is characterized in that the step S02
The energy of used ion beam when intermediate ion source carries out ion implanting to the photoresist of substrate surface in the ion implanting chamber
Greater than 3MeV.
7. detecting the method for neutron content in ion implanting chamber according to claim 4, which is characterized in that the photoresist
With a thickness of 6-10 microns.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811582671.8A CN109633734B (en) | 2018-12-24 | 2018-12-24 | Device and method for detecting neutron content in ion implantation cavity |
| PCT/CN2019/085521 WO2020133865A1 (en) | 2018-12-24 | 2019-05-05 | Device and method for detecting neutron content in ion implantation cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811582671.8A CN109633734B (en) | 2018-12-24 | 2018-12-24 | Device and method for detecting neutron content in ion implantation cavity |
Publications (2)
| Publication Number | Publication Date |
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| CN109633734A true CN109633734A (en) | 2019-04-16 |
| CN109633734B CN109633734B (en) | 2023-01-31 |
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| CN201811582671.8A Active CN109633734B (en) | 2018-12-24 | 2018-12-24 | Device and method for detecting neutron content in ion implantation cavity |
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| CN (1) | CN109633734B (en) |
| WO (1) | WO2020133865A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020133865A1 (en) * | 2018-12-24 | 2020-07-02 | 上海集成电路研发中心有限公司 | Device and method for detecting neutron content in ion implantation cavity |
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| GB201003674D0 (en) * | 2009-10-26 | 2010-04-21 | Finphys Oy | Neutron detector with neutron converter, method for manufacturing the neutron detector and neutron imaging apparatus |
| CN102162857A (en) * | 2011-01-11 | 2011-08-24 | 长沙开元仪器股份有限公司 | Method and system for detecting neutron yield |
| JP2011196739A (en) * | 2010-03-18 | 2011-10-06 | Hitachi Aloka Medical Ltd | Radiation measuring device |
| CN102386121A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Manufacturing method of semiconductor device and semiconductor buried layer |
| CN106898546A (en) * | 2017-03-13 | 2017-06-27 | 上海华力微电子有限公司 | A kind of method of monitoring Ge ion implanting quality |
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| CN107247286B (en) * | 2017-05-16 | 2019-06-07 | 北京大学 | A kind of fast neutron spectrum measuring system and method |
| JP6785189B2 (en) * | 2017-05-31 | 2020-11-18 | 住友重機械イオンテクノロジー株式会社 | Ion implantation device and ion implantation method |
| CN107884809B (en) * | 2017-11-10 | 2020-09-15 | 中国科学院高能物理研究所 | Neutron detector and neutron detection method |
| CN109633734B (en) * | 2018-12-24 | 2023-01-31 | 上海集成电路研发中心有限公司 | Device and method for detecting neutron content in ion implantation cavity |
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2018
- 2018-12-24 CN CN201811582671.8A patent/CN109633734B/en active Active
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Patent Citations (5)
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|---|---|---|---|---|
| GB201003674D0 (en) * | 2009-10-26 | 2010-04-21 | Finphys Oy | Neutron detector with neutron converter, method for manufacturing the neutron detector and neutron imaging apparatus |
| JP2011196739A (en) * | 2010-03-18 | 2011-10-06 | Hitachi Aloka Medical Ltd | Radiation measuring device |
| CN102386121A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Manufacturing method of semiconductor device and semiconductor buried layer |
| CN102162857A (en) * | 2011-01-11 | 2011-08-24 | 长沙开元仪器股份有限公司 | Method and system for detecting neutron yield |
| CN106898546A (en) * | 2017-03-13 | 2017-06-27 | 上海华力微电子有限公司 | A kind of method of monitoring Ge ion implanting quality |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020133865A1 (en) * | 2018-12-24 | 2020-07-02 | 上海集成电路研发中心有限公司 | Device and method for detecting neutron content in ion implantation cavity |
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| WO2020133865A1 (en) | 2020-07-02 |
| CN109633734B (en) | 2023-01-31 |
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