CN109633734B - Device and method for detecting neutron content in ion implantation cavity - Google Patents
Device and method for detecting neutron content in ion implantation cavity Download PDFInfo
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- CN109633734B CN109633734B CN201811582671.8A CN201811582671A CN109633734B CN 109633734 B CN109633734 B CN 109633734B CN 201811582671 A CN201811582671 A CN 201811582671A CN 109633734 B CN109633734 B CN 109633734B
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Abstract
The invention discloses a device for detecting neutron content in an ion implantation cavity, which comprises an ion implantation cavity, an ion source, a data collection module and a processing module, wherein a substrate coated with photoresist on the surface is placed in the ion implantation cavity, the ion source carries out ion implantation on the photoresist in the substrate, neutrons generated in the ion implantation process interact with nuclei of C, H, O element in the photoresist to generate gamma rays, the data collection module is used for measuring the intensity of the gamma rays in the ion implantation cavity and transmitting the intensity to the processing module, and the processing module calculates the neutron content generated in the ion implantation process according to the intensity of the gamma rays. According to the device and the method for detecting the neutron content in the ion implantation cavity, provided by the invention, the neutron content generated in the high-energy ion implantation process can be further measured by measuring the intensity of gamma rays.
Description
Technical Field
The invention relates to integrated circuit process design, in particular to a device and a method for detecting neutron content in an ion implantation cavity.
Background
With the continuous development of semiconductor technology, ion implantation technology plays an increasingly important role in integrated circuit manufacturing. Ion implanters, which are the key devices in the pre-fabrication processes of integrated circuits, are the technology of doping regions near the surface of semiconductors with the aim of changing the carrier concentration and conductivity type of the semiconductor, of which high-energy ion implanters are the best method for deep doping. The particle accelerator of the high-energy ion implanter mainly comprises radio frequency acceleration and electrostatic acceleration, and ions emit rays which are harmful to human bodies and the environment, such as rays and the like, while the ions are accelerated in the system. Therefore, the x-ray of the implanter is required to be detected in daily life, but for the ultrahigh-energy implanter, ions with 2 valence, 3 valence or even 4 valence need to be generated, neutrons can be generated while the x-ray is generated in the process, and the neutrons are uncharged, so that when the ultrahigh-energy implanter penetrates through an object, the ultrahigh-energy implanter and the nuclear electrons of atoms do not generate the action of electron coulomb force, can easily penetrate through an electron layer and directly hit atomic nuclei to generate nuclear reaction, so that some metal materials for manufacturing the implanter, such as aluminum, lead can be easily punctured, and accordingly damage is caused; meanwhile, the neutrons are not electrified, so that the effects of ionization and the like cannot be caused, the direct observable effect cannot be generated, and the detection by the conventional means is difficult.
Therefore, a reliable method for detecting neutrons in the high-energy ion implanter must be adopted to prevent the system from causing damage to surrounding workers and polluting the environment during working.
Disclosure of Invention
The invention aims to provide a device and a method for detecting the neutron content in an ion implantation cavity, wherein the high-energy ions bombard photoresist, wherein gamma rays are generated by interaction of neutrons and atomic nuclei of elements such as C, H, O and the like in the photoresist, and the neutron content generated in the high-energy ion implantation process can be further measured by measuring the intensity of the gamma rays.
In order to achieve the purpose, the invention adopts the following technical scheme: the device for detecting the neutron content in the ion implantation cavity comprises the ion implantation cavity, an ion source, a data collection module and a processing module, wherein the ion source is used for carrying out ion implantation on the ion implantation cavity, and the data collection module is simultaneously connected with the ion implantation cavity, the processing module and the ion source;
the ion implantation device comprises an ion implantation cavity, a substrate with a photoresist coated on the surface is placed in the ion implantation cavity, the ion source emits ion beams to implant ions into the photoresist in the substrate, neutrons generated in the ion implantation process interact with atomic nuclei of C, H, O element in the photoresist to generate gamma rays, the data collection module is used for measuring the intensity of the gamma rays in the ion implantation cavity and transmitting the intensity of the gamma rays to the processing module, and the processing module calculates the content of the neutrons generated in the ion implantation process according to the intensity of the gamma rays.
Further, the thickness of the photoresist is 6-10 microns.
Further, the ion source adopts an ion beam with energy larger than 3MeV when the photoresist is subjected to ion implantation.
The invention provides a method for detecting neutron content in an ion implantation cavity, which comprises the following steps:
s01: coating a layer of photoresist on a substrate, and putting the substrate into an ion implantation cavity;
s02: ion implantation is carried out on the photoresist on the surface of the substrate in the ion implantation cavity by using an ion source, neutrons generated in the ion implantation process interact with atomic nuclei of C, H, O element in the photoresist to generate gamma rays;
s03: measuring the intensity of gamma-rays in the ion implantation chamber by using a data collection module, and transmitting the intensity to a processing module;
s04: the processing module calculates the neutron content generated in the ion implantation process according to the intensity of the gamma ray.
Further, the intensity of the gamma ray is less than or equal to 0.6uSv/h.
Further, in the step S02, the ion source is configured to use an ion beam having an energy greater than 3MeV for ion implantation into the photoresist on the substrate surface in the ion implantation chamber.
Further, the thickness of the photoresist is 6-10 microns.
The invention has the beneficial effects that: the invention utilizes the fact that in the high-energy ion implantation process, a great deal of particles bombard the photoresist, wherein the absorption coefficient of neutrons to elements such as C, H, O and the like is large, the particles such as protons and the like do not absorb, when the neutrons interact with atomic nuclei of the elements such as C, H, O and the like, inelastic scattering can occur, a great deal of gamma rays are generated, the energy of the gamma rays is high, the generated cross section is large, the measurement is easy, and the intensity is in direct proportion to the content of C, H and O. By measuring the intensity of the gamma rays, the neutron content generated in the high-energy ion implantation process can be further measured. The invention solves the problem that neutrons generated by high-energy ion injection cannot be measured by other methods, and the device has simple structure, simple measurement system composition instrument and lower cost.
Drawings
Fig. 1 is a schematic structural diagram of a device for detecting neutron content in an ion implantation chamber according to the present invention.
In the figure: 100 substrates, 102 photoresist, 200 ion implantation chamber.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the apparatus for detecting neutron content in an ion implantation chamber according to the present invention includes an ion implantation chamber 200, an ion source, a data collection module and a processing module, wherein the ion source is configured to perform ion implantation into the ion implantation chamber 200, and the data collection module is simultaneously connected to the ion implantation chamber and the processing module. The substrate can be a silicon substrate, and the thickness of a photoresist layer coated on the silicon substrate is 6-10 microns; the ion source is used for ion implantation of the photoresist, and the energy of the adopted ion beam is more than 3MeV.
The method comprises the steps that a substrate 100 with the surface coated with photoresist 101 is placed in an ion implantation chamber 200, an ion source emits ion beams to implant ions into the photoresist 101 in the substrate, neutrons generated in the ion implantation process interact with atomic nuclei of C, H, O element in the photoresist to generate gamma rays, a data collection module is used for measuring the intensity of the gamma rays in the ion implantation chamber and transmitting the intensity to a processing module, and the processing module calculates the content of neutrons generated in the ion implantation process according to the intensity of the gamma rays.
The absorption coefficient of neutrons to elements such as C, H, O and the like is large, particles such as protons and the like do not absorb, when neutrons interact with atomic nuclei of elements such as C, H, O and the like, inelastic scattering can occur, a large amount of gamma rays are generated, the gamma rays have high energy, the generated cross section is large, the measurement is easy, and the intensity is in direct proportion to the content of C, H, O. The intensity of gamma-ray measured by the data collection module in the invention comprises the intensity of gamma-ray, and as the intensity is in direct proportion to the content of C, H and O and the content of neutrons, the processing module can calculate the content of neutrons in the ion implantation chamber according to the intensity of gamma-ray.
The invention provides a method for detecting neutron content in an ion implantation cavity, which comprises the following steps:
s01: a layer of photoresist is coated on a substrate and the substrate is placed in an ion implantation chamber. The substrate can be a silicon substrate, and the thickness of a photoresist layer coated on the silicon substrate is 6-10 microns.
S02: ion implantation is carried out on the photoresist on the surface of the substrate in the ion implantation cavity by using an ion source, neutrons generated in the ion implantation process interact with atomic nuclei of C, H, O element in the photoresist to generate gamma rays. The energy of ion beams adopted when the ion source performs ion implantation on the photoresist is greater than 3MeV, the energy of gamma rays is high, the generated cross section is large, the measurement is easy, and the strength is in direct proportion to the contents of C, H and O.
S03: the intensity of the gamma-rays in the ion implantation chamber was measured using a data collection module and transmitted to a processing module.
The intensity of gamma ray measured in the invention is less than or equal to 0.6uSv/h, when the intensity of gamma ray is greater than the value, it indicates that the injector has problems, and does not meet SEMI standard, and whether the use standard is met is detected again after the overhaul is needed.
Specifically, in the ion implantation process, a set threshold value is determined in advance, when the intensity of gamma-ray measured by the data collection module is greater than or equal to the set threshold value, the ion source stops ion implantation, and the range of the set threshold value is 0.4-0.6uSv/h. When the intensity of the measured gamma ray is greater than or equal to the set threshold value, the receipt collection module sends out an alarm signal or a stop signal, so that the ion source stops injecting.
S04: the processing module calculates the neutron content generated in the ion implantation process according to the intensity of the gamma ray. Since the intensity of γ ray is proportional to the contents of C, H and O and the content of neutron, the processing module can calculate the content of neutron in the ion implantation chamber according to the intensity of γ ray.
The invention utilizes the fact that in the high-energy ion implantation process, a great deal of particles bombard the photoresist, wherein the absorption coefficient of neutrons to elements such as C, H, O and the like is large, the particles such as protons and the like do not absorb, when the neutrons interact with atomic nuclei of the elements such as C, H, O and the like, inelastic scattering can occur, a great deal of gamma rays are generated, the energy of the gamma rays is high, the generated cross section is large, the measurement is easy, and the intensity is in direct proportion to the content of C, H and O. By measuring the intensity of the gamma rays, the neutron content generated in the high-energy ion implantation process can be further measured. The invention solves the problem that neutrons generated by high-energy ion injection cannot be measured by other methods, and the device has simple structure, simple instrument of a measuring system and lower cost.
The above description is only a preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that any equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the appended claims.
Claims (7)
1. The device for detecting the neutron content in the ion implantation cavity is characterized by comprising an ion implantation cavity, an ion source, a data collection module and a processing module, wherein the ion source is used for carrying out ion implantation on the ion implantation cavity, and the data collection module is simultaneously connected with the ion implantation cavity and the ion source;
the ion implantation device comprises an ion implantation cavity, an ion source, a data collection module and a processing module, wherein a substrate coated with photoresist on the surface is placed in the ion implantation cavity, the ion source emits ion beams to implant ions into the photoresist in the substrate, neutrons generated in the ion implantation process interact with atomic nuclei of C, H, O element in the photoresist to generate gamma rays, the data collection module is used for measuring the intensity of the gamma rays in the ion implantation cavity and transmitting the intensity of the gamma rays to the processing module, and the processing module calculates the content of the neutrons generated in the ion implantation process according to the intensity of the gamma rays.
2. The apparatus of claim 1, wherein the photoresist has a thickness of 6-10 microns.
3. The apparatus of claim 1, wherein the ion source is configured to ion implant the photoresist using an ion beam having an energy greater than 3MeV.
4. A method for detecting the neutron content in an ion implantation chamber is characterized by comprising the following steps:
s01: coating a layer of photoresist on a substrate, and putting the substrate into an ion implantation cavity;
s02: ion implantation is carried out on the photoresist on the surface of the substrate in the ion implantation cavity by using an ion source, neutrons generated in the ion implantation process interact with atomic nuclei of C, H, O elements in the photoresist to generate gamma rays;
s03: measuring the intensity of gamma-rays in the ion implantation chamber by using a data collection module, and transmitting the intensity to a processing module;
s04: and the processing module calculates the neutron content generated in the ion implantation process according to the intensity of the gamma rays.
5. The method for detecting the neutron content in the ion implantation chamber according to claim 4, wherein the intensity of said γ -ray is less than or equal to 0.6uSv/h.
6. The method for detecting the neutron content in the ion implantation chamber according to claim 4, wherein the energy of the ion beam used by the ion source for ion implantation of the photoresist on the surface of the substrate in the ion implantation chamber in the step S02 is greater than 3MeV.
7. The method of detecting the neutron content in an ion implantation chamber of claim 4, wherein the photoresist has a thickness of 6-10 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811582671.8A CN109633734B (en) | 2018-12-24 | 2018-12-24 | Device and method for detecting neutron content in ion implantation cavity |
| PCT/CN2019/085521 WO2020133865A1 (en) | 2018-12-24 | 2019-05-05 | Device and method for detecting neutron content in ion implantation cavity |
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| CN201811582671.8A CN109633734B (en) | 2018-12-24 | 2018-12-24 | Device and method for detecting neutron content in ion implantation cavity |
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| CN109633734B true CN109633734B (en) | 2023-01-31 |
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| GB201003674D0 (en) * | 2009-10-26 | 2010-04-21 | Finphys Oy | Neutron detector with neutron converter, method for manufacturing the neutron detector and neutron imaging apparatus |
| CN102162857A (en) * | 2011-01-11 | 2011-08-24 | 长沙开元仪器股份有限公司 | Method and system for detecting neutron yield |
| JP2011196739A (en) * | 2010-03-18 | 2011-10-06 | Hitachi Aloka Medical Ltd | Radiation measuring device |
| CN102386121A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Manufacturing method of semiconductor device and semiconductor buried layer |
| CN106898546A (en) * | 2017-03-13 | 2017-06-27 | 上海华力微电子有限公司 | A kind of method of monitoring Ge ion implanting quality |
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| CN107247286B (en) * | 2017-05-16 | 2019-06-07 | 北京大学 | A kind of fast neutron spectrum measuring system and method |
| JP6785189B2 (en) * | 2017-05-31 | 2020-11-18 | 住友重機械イオンテクノロジー株式会社 | Ion implantation device and ion implantation method |
| CN107884809B (en) * | 2017-11-10 | 2020-09-15 | 中国科学院高能物理研究所 | Neutron detector and neutron detection method |
| CN109633734B (en) * | 2018-12-24 | 2023-01-31 | 上海集成电路研发中心有限公司 | Device and method for detecting neutron content in ion implantation cavity |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201003674D0 (en) * | 2009-10-26 | 2010-04-21 | Finphys Oy | Neutron detector with neutron converter, method for manufacturing the neutron detector and neutron imaging apparatus |
| JP2011196739A (en) * | 2010-03-18 | 2011-10-06 | Hitachi Aloka Medical Ltd | Radiation measuring device |
| CN102386121A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Manufacturing method of semiconductor device and semiconductor buried layer |
| CN102162857A (en) * | 2011-01-11 | 2011-08-24 | 长沙开元仪器股份有限公司 | Method and system for detecting neutron yield |
| CN106898546A (en) * | 2017-03-13 | 2017-06-27 | 上海华力微电子有限公司 | A kind of method of monitoring Ge ion implanting quality |
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| CN109633734A (en) | 2019-04-16 |
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