CN111933545B - Method and system for detecting blocking capability of photoresist layer - Google Patents
Method and system for detecting blocking capability of photoresist layer Download PDFInfo
- Publication number
- CN111933545B CN111933545B CN202010937768.7A CN202010937768A CN111933545B CN 111933545 B CN111933545 B CN 111933545B CN 202010937768 A CN202010937768 A CN 202010937768A CN 111933545 B CN111933545 B CN 111933545B
- Authority
- CN
- China
- Prior art keywords
- wafer
- doping
- resistance
- photoresist layer
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000000903 blocking effect Effects 0.000 title claims abstract description 27
- 235000012431 wafers Nutrition 0.000 claims abstract description 377
- 238000000137 annealing Methods 0.000 claims abstract description 29
- 238000001514 detection method Methods 0.000 claims description 7
- 238000007689 inspection Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 description 118
- 150000002500 ions Chemical class 0.000 description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 230000008569 process Effects 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 14
- 238000005259 measurement Methods 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 229910006367 Si—P Inorganic materials 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a method and a system for detecting the blocking capability of a light resistance layer, comprising the following steps: providing a first wafer and a second wafer, wherein the first wafer and the second wafer are wafers of a first doping type; doping the first wafer and the second wafer for the first time to form a first doped region in the first wafer and the second wafer; annealing the first wafer and the second wafer, measuring the resistance of the first wafer, and defining the resistance as a first resistance; forming a photoresist layer on the second wafer; performing second doping on the first doped region of the second wafer through the photoresist layer; and removing the photoresist layer, measuring the resistance of the second wafer, and defining the resistance as a second resistance. The method for detecting the blocking capability of the photoresist layer can quickly detect the blocking capability of the photoresist layer.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a method and a system for detecting blocking capability of a photoresist layer.
Background
The ion implantation technology is a doping technology of a semiconductor material, has the advantages of low-temperature doping, easy masking, accurate dose control and high uniformity, is used for multiple process steps such as source and drain doping, channel doping, light-doped drain doping and the like, and enables the manufactured semiconductor device to have the characteristics of high speed, low power consumption, good stability, high yield and the like. Since the conditions such as energy dose required in different ion implantation processes are different, and the ion implantation is performed by doping in a designated area, other positions need to be masked by a barrier layer such as photoresist. The blocking capability of the photoresist blocking layers with different thicknesses for ion implantation is different, ions can easily penetrate through the blocking layers due to the too thin thickness, and the critical dimension is difficult to control during photoetching of the too thick photoresist layer, which requires selecting a photoresist layer with a proper thickness in the implantation process.
The method for judging the blocking capability of the photoresist layer in the prior art comprises the following steps: providing a plurality of test silicon wafers; coating photoresist layers with different thicknesses on different test silicon wafers; testing the thickness of the photoresist of each silicon wafer; implanting ions with determined energy into a silicon wafer coated with photoresist layers with different thicknesses; removing the photoresist layer of each silicon chip; and testing each silicon wafer by adopting a secondary ion mass spectrum to obtain the ion quantity of each silicon wafer, and considering that the thickness of the photoresist layer corresponding to the silicon wafer with the ion quantity is proper when the ion quantity is within an allowable range. In the prior art, if there is a defect on the silicon wafer, it is impossible to determine whether the photoresist layer can be used.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention provides a method for detecting the blocking capability of a photoresist layer, so as to simplify the testing process and quickly obtain the capability of the photoresist layer to block the ion implantation.
In order to achieve the above and other objects, the present invention provides a method for detecting blocking capability of a photoresist layer, comprising:
providing a first wafer and a second wafer, wherein the first wafer and the second wafer are wafers of a first doping type;
performing first doping on the first wafer and the second wafer to form a first doped region in the first wafer and the second wafer, wherein the ion type of the first doping is a second doping type, and the second doping type is different from the first doping type;
annealing the first wafer and the second wafer, measuring the resistance of the first wafer, and defining the resistance as a first resistance;
forming a photoresist layer on the second wafer;
doping the first doped region of the second wafer for the second time;
removing the photoresist layer, measuring the resistance of the second wafer, and defining the resistance as a second resistance;
if the difference value between the second resistance and the first resistance is larger than the threshold value, the photoresist layer is broken down by the second doping, and if the difference value between the second resistance and the first resistance is smaller than the threshold value, the photoresist layer is not broken down by the second doping.
Further, the first wafer and the second wafer have the same structure.
Further, the resistance of the first wafer and the second wafer is between 0.1 and 20 ohms.
Further, when the first doping type is P-type, the second doping type is N-type; and when the first doping type is an N type, the second doping type is a P type.
Further, the doping dosage of the first doping is 1011-1015/cm2The doping amount of the second doping is 1010-1016/cm2In the meantime.
Further, the doping energy of the first doping is between 1 and 50KeV, and the doping energy of the second doping is between 1 and 8000 KeV.
Further, the temperature of the annealing treatment comprises 850-1100 ℃, and the time of the annealing treatment comprises 0-10 minutes.
Further, the photoresist layer covers the first doped region.
Further, when measuring the electrical resistance of the first wafer, the thermal conductivity of the first wafer is also measured.
Further, when measuring the resistance of the second wafer, the thermal conductivity of the second wafer is also measured; if the difference between the thermal conductivity of the second wafer and the thermal conductivity of the first wafer is larger than a preset value, the second doping breaks through the light resistance layer, and if the difference between the thermal conductivity of the second wafer and the thermal conductivity of the first wafer is smaller than the preset value, the second doping does not break through the light resistance layer.
Further, the present invention also provides a system for detecting the blocking capability of a photoresist layer, comprising:
the resistance measuring unit is used for measuring the resistance of a first wafer and a second wafer, defining the resistance of the first wafer as a first resistance, and defining the resistance of the second wafer as a second resistance;
a photoresist layer forming unit for forming a photoresist layer on the second wafer;
the stripping unit is used for stripping the photoresist layer;
the comparison unit is used for comparing the first resistor with the second resistor, if the difference value between the second resistor and the first resistor is larger than a threshold value, the photoresist layer is broken down by the second doping, and if the difference value between the second resistor and the first resistor is smaller than the threshold value, the photoresist layer is not broken down by the second doping;
before measuring the resistance of the first wafer, carrying out first doping on the first wafer and the second wafer so as to form a first doped region in the first wafer and the second wafer, and carrying out annealing treatment on the first wafer and the second wafer;
before measuring the resistance of the second wafer, carrying out second doping on the first doped region of the second wafer through the photoresist layer, and stripping the photoresist layer through the stripping unit;
the first wafer and the second wafer are wafers of a first doping type, the ion type of the first doping is a second doping type, and the second doping type is different from the first doping type.
In summary, the present invention provides a method and a system for detecting the blocking capability of a photoresist layer, which first provide a first wafer and a second wafer, first form a first doped region in the first wafer and the second wafer, then perform annealing, and measure the resistance of the first wafer, wherein the first wafer and the second wafer have the same resistance because the first wafer and the second wafer have the same structure; and forming a photoresist layer on the second wafer, doping the first doped region for the second time through the photoresist layer, and measuring the resistance of the second wafer. The first time doped ions can form chemical bonds with silicon atoms after annealing, if the second time doped ions enter the first doped region through the photoresist layer, the second time doped ions destroy the chemical bonds formed by the first time doped ions and the silicon atoms, so that the resistance of the second wafer is increased, if the difference value between the resistance of the second wafer and the resistance of the first wafer is larger than a threshold value, the photoresist layer can be judged to be broken down by the implanted ions, otherwise, the photoresist layer can be judged not to be broken down by the implanted ions.
In summary, when measuring the resistance of the first wafer, the thermal conductivity of the first wafer may also be measured, and when measuring the resistance of the second wafer, the thermal conductivity of the second wafer may also be measured. If the difference value between the thermal conductivity of the second wafer and the thermal conductivity of the first wafer is larger than a preset value, the second-time doping breaks down the light resistance layer; and if the difference value between the thermal conductivity of the second wafer and the thermal conductivity of the first wafer is smaller than a preset value, the second doping does not break down the photoresist layer. In this embodiment, the two methods for detecting the blocking capability of the photoresist layer can be verified mutually, and when the two methods are used simultaneously, the thermal conductivity can be firstly detected, and then the resistance can be detected, so as to prevent the damage to the surface structure of the wafer in the resistance test process.
Drawings
FIG. 1: the present embodiment provides a flow chart of a method for detecting the blocking capability of a photoresist layer.
FIG. 2: the first wafer and the second wafer are schematically shown in structure.
FIG. 3: the first doping forms a structural schematic diagram of the first doping region.
FIG. 4: a schematic diagram of an ion implanter.
FIG. 5: fig. 3 is a top view of the first wafer or the second wafer.
FIG. 6: a schematic diagram of annealing the first wafer and the second wafer.
FIG. 7: forming a structural diagram of the photoresist layer.
FIG. 8: fig. 7 is a top view.
FIG. 9: the structure of the second doping is shown schematically.
FIG. 10: and forming a structural schematic diagram of the second doped region.
FIG. 11: a graph of the first resistance and the second resistance.
FIG. 12: resistance maps of the first test and the second test.
FIG. 13: resistance plots of the third test and the fourth test.
FIG. 14: resistance maps of the fifth test and the sixth test.
FIG. 15: a plot of the first thermal conductivity and the second thermal conductivity.
FIG. 16: thermal conductivity maps of the first test and the second test.
FIG. 17: thermal conductivity plots of the third and fourth tests.
FIG. 18: thermal conductivity maps of the fifth test and the sixth test.
FIG. 19: the present embodiment provides a schematic diagram of a system for detecting the blocking capability of a photoresist layer.
Description of the symbols
11: a first wafer; 21: a second wafer; 100: an ion implanter; 101: an ion source; 102: an accelerating tube; 103: a scanning system; 104: a process chamber; 200: an annealing cavity; 22: a photoresist layer; a: a first doped region; b: a second doped region; 300: a detection system; 301: a resistance measuring unit; 302: a photoresist layer forming unit; 303: a peeling unit; 304: and a comparison unit.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
In a semiconductor manufacturing process, before an ion implantation process or an etching process is performed, a photolithography process is required to fabricate a photolithography pattern so as to reach a pre-designed region to be ion implanted or an etching region, thereby specifying an ion pattern to be implanted or an etching pattern in a subsequent process. A photoresist layer is formed on the substrate or wafer before the ion implantation process or the etching process, for example, a photoresist layer is first formed on the substrate or wafer before the ion implantation process, and the photoresist layer can prevent the ions from being implanted into the substrate under the photoresist layer. If ions enter the substrate through the photoresist layer, the doped region in the substrate is enlarged. Therefore, the present embodiment provides a method for detecting the blocking capability of a photoresist layer to detect the blocking capability of the photoresist layer, so as to determine the thickness of the photoresist layer to be used more easily.
As shown in fig. 1, the present embodiment provides a method for detecting blocking capability of a photoresist layer, including:
s1: providing a first wafer and a second wafer, wherein the first wafer and the second wafer are wafers of a first doping type;
s2: performing first doping on the first wafer and the second wafer to form a first doped region in the first wafer and the second wafer, wherein the ion type of the first doping is a second doping type, and the second doping type is different from the first doping type;
s3: annealing the first wafer and the second wafer, measuring the resistance of the first wafer, and defining the resistance as a first resistance;
s4: forming a photoresist layer on the second wafer;
s5: doping the first doped region of the second wafer for the second time;
s6: removing the photoresist layer, measuring the resistance of the second wafer, and defining the resistance as a second resistance; if the difference value between the second resistance and the first resistance is larger than the threshold value, the photoresist layer is broken down by the second doping, and if the difference value between the second resistance and the first resistance is smaller than the threshold value, the photoresist layer is not broken down by the second doping.
As shown in fig. 2, in step S1, a first wafer 11 and a second wafer 21 are provided, the first wafer 11 and the second wafer 21 are the same wafer, and the first wafer 11 and the second wafer 21 have the same doping type, so the first wafer 11 is taken as an example for the description in this embodiment. The first wafer 11 is, for example, silicon, germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and the first wafer 11 can also be a silicon-on-insulator substrate or a germanium-on-insulator substrate. In this embodiment, the first wafer 11 is a silicon substrate, and the first wafer 11 may also be a wafer of a first doping type. The first doping type is, for example, P-type or N-type, and the first wafer 11 is an N-type doped wafer in this embodiment. In some embodiments, the first wafer 11 may also serve as a substrate for a semiconductor device, and the semiconductor device is formed by forming a gate structure on the first wafer 11. In some embodiments, when forming the gate structure on the first wafer 11, a source, a drain, or other semiconductor structure may also be formed in the first wafer 11. The resistance of the first wafer 11 and the second wafer 21 is between 0.1-20 ohms.
As shown in fig. 3-4, in step S2, the first wafer 11 and the second wafer 21 are first placed in the ion implanter 100, and the first wafer 11 and the second wafer 21 are first doped to form a first doped region a in the first wafer 11 and the second wafer 21. In this embodiment, the ion implanter 100 comprises an ion source 101, an acceleration tube 102, a scanning system 103 and a process chamber 104. An ion source 101, an acceleration tube 102, a scanning system 103 and a process chamber 104 are connected in sequence, wherein the ion source 101 is used for generating implantation ions. A source of contaminant gas is provided within the ion source 101 and ions are generated within the ion source 101 when electrons bombard gas atoms. When ions enter the acceleration tube 102, the acceleration tube 102 starts to accelerate the ion source 101, and the higher the velocity of the ions, the higher the energy, which means that the doped ions can be implanted deeper into the silicon. As the ions pass through the acceleration tube 102 and into the scanning system 103, the scanning system 103 can deflect the ions so that the ions can scan uniformly across the substrate. The first wafer 11 and the second wafer 21 are placed in the process chamber 104, and ions are implanted into the first wafer 11 and the second wafer 21 after passing through the scanning system 103, so as to form a first doped region a in the first wafer 11 and the second wafer 21.
As shown in fig. 5, fig. 5 is a top view of the first wafer or the second wafer in fig. 3, and it can be seen from fig. 5 that the first doping region a is located on the entire upper surface of the first wafer 11 or the second wafer 21, that is, when the first doping is performed, the photoresist layer is not coated on the first wafer 11 and the second wafer 21, so that the implanted ions can cover the entire upper surfaces of the first wafer 11 and the second wafer 21.
As shown in fig. 5, in the present embodiment, the doping type of the ions in the first doping region a may be a second doping type, and the second doping type may be a P type or an N type. It should be noted that the second doping type is not used for the first doping type, and therefore, when the first doping type is a P type, the second doping type is an N type; when the first doping type is N type, the second doping type is P type. In this embodiment, the dopant amount of the first doping is 1011-1015/cm2The doping energy of the first doping is between 1 and 50 KeV. The dopant ions for the first doping may be any one or a combination of B, P, Ni or F.
As shown in fig. 6, in step S3, after the first doping region a is formed, the first wafer 11 and the second wafer 21 are placed in the annealing chamber 200, and the annealing process for the first wafer 11 and the second wafer 21 is started. After the first doped region a is formed in the first wafer 11 and the second wafer 21, the implanted ions do not occupy lattice points of silicon, but stay at interstitial positions of the lattice, and the interstitial ions can be activated only through a high-temperature annealing process. To activate the dopant ions, the first wafer 11 and the second wafer 21 may be annealed at a high temperature annealing temperature, which may not be effective to activate the dopant ions if the annealing temperature is not high enough.
As shown in fig. 6, in the present embodiment, when the first wafer 11 and the second wafer 21 are placed in the annealing chamber 200, the temperature of the first wafer 11 and the second wafer 21 starts to be raised. The annealing temperatures of the first wafer 11 and the second wafer 21 may include 850-1100 deg.c, such as 1000 deg.c. The annealing time of the first wafer 11 and the second wafer 21 may comprise 0-10 minutes, for example 3 minutes or 5 minutes. After the annealing treatment is performed on the first wafer 11 and the second wafer 21, the silicon atoms move back to the lattice position again, and the doped ions can also enter the crystalline silicon instead of the silicon atoms. For example, when the first doping ion is P, the doping ion and the silicon atom may form a chemical bond, such as a Si — P bond, after annealing.
As shown in fig. 6, in some embodiments, the first wafer 11 may be further divided into a plurality of regions in advance, for example, the first wafer 11 is divided into a first region, a second region and a third region. The first region, the second region and the third region are sequentially distributed from the center to the edge of the first wafer 11, and during annealing, the first region, the second region and the third region can be respectively annealed, so that doping ions can be more effectively activated.
As shown in fig. 1, after the annealing is completed, the resistances of the first wafer 11 and the second wafer 21 are measured by the resistance measuring device, and since the first wafer 11 and the second wafer 21 are the same wafer and the first wafer 11 and the second wafer 21 go through the same step, the resistance of the first wafer 11 is equal to the resistance of the second wafer 21. When measuring the resistances of the first wafer 11 and the second wafer 21, since the probe contacts the surfaces of the first wafer 11 and the second wafer 21, in order to reduce the influence on the surface structure of the second wafer 21, only the resistance of the first wafer 11 is measured, and the resistance of the first wafer 11 is defined as the first resistance, and the resistance of the second wafer 11 can also be obtained.
As shown in fig. 7-8, in step S4, a photoresist layer 22 is formed on the second wafer 21, the photoresist layer 22 is located on the first doped region a, and it can be seen from fig. 8 that the photoresist layer 22 covers the entire first doped region a. In the present embodiment, the thickness d of the photoresist layer 22 is, for example, between 1 micron and 5 microns, such as 1 micron, 1.15 microns. It should be noted that the thickness d of the photoresist layer 22 can be selected according to the device to be finally formed.
As shown in fig. 7-8, in the present embodiment, a photoresist material, which is a liquid material, is formed on the second wafer 21, the photoresist material is coated on the second wafer 21 by a spin coating apparatus, a thin layer is formed on the second wafer 21, and then baking is performed to cure the photoresist material, so as to form the photoresist layer 22.
As shown in fig. 9, in step S5, after the photoresist layer 22 is formed, the second wafer 21 is placed in the ion implanter 100 again, and the second wafer 21 is doped for the second time. Specifically, the implanted ions perform a second doping on the first doped region a in the second wafer 21 through the photoresist layer 22. The ion type of the second doping is not limited, and can be N type or P type. The doping amount of the second doping is 1010-1016/cm2In the meantime. The doping energy of the second doping is between 1 and 8000 KeV. If the second doping can break through the photoresist layer 22, the doping ions enter the first doping region a, and the second doping ions will break the chemical bond formed by the first doping ions and the silicon atoms. For example, if the first ion and the silicon atom form a Si-P bond and the second ion is B, then B breaks the Si-P bond and the resistance of the second wafer 21 changes. If the second doping fails to break through the photoresist layer 22, the doping ions cannot enter the first doping region a, and the second doping ions will destroy the chemical bond formed by the first doping ions and the silicon atoms, for example, if the first doping ions and the silicon atoms form a Si-P chemical bond, and the second doping ions are Ni, then Ni cannot destroy the Si-P bond, and the resistance of the second wafer 21 will not substantially change. Therefore, the present embodiment can detect whether the resistive layer 22 is broken down by measuring the resistance variation of the second wafer 21, and thus can detect the blocking capability of the resistive layer 22.
As shown in fig. 10, in step S6, the photoresist layer 22 is first removed, and as can be seen from fig. 10, the second doped region B is located in the first doped region a and has a depth smaller than that of the first doped region a. After the second doped region B is formed, the annealing step is not performed, the resistance of the second wafer 21 is directly measured, and the resistance of the second wafer 21 is defined as a second resistance.
As shown in fig. 6 and 10, in the present embodiment, the first wafer 11 and the second wafer 21 having the same structure are used, and after the first doped region a is formed, the resistance of the first wafer 11 is measured, but the resistance of the second wafer 21 is not measured. After the second wafer 21 forms the second doped region B, the resistance of the second wafer 21 is measured. If the resistance of the second wafer 21 is measured after the first doped region a is formed on the second wafer 21, the resistance measuring device will damage the surface structure of the second wafer 21, and thus will bring interference factors to the second measurement of the resistance of the second wafer 21, so in this embodiment, the first resistance is obtained through the first wafer 11, and the second resistance is obtained through the second wafer 21. In this embodiment, the resistances of the first wafer 11 and the second wafer 21 can be measured, for example, by a probe method.
Referring to fig. 11-14, and table 1, first, fig. 12-14 will be described, where wafer 1 includes a first wafer 11 and a second wafer 21. The first wafer 11 is used to measure the first resistance and the second wafer 21 is used to measure the second resistance. The wafer 2-wafer 6 is the same as the wafer 1, the wafer 1 is adopted in the first test, the wafer 2 is adopted in the second test, and the like.
Referring to fig. 11-12 and table 1, in this embodiment, a first test is performed by first doping the first wafer 11 and the second wafer 21 with a doping energy of 30KeV, first doping ions of P, and a first doping dose of 10 KeV13/cm2. Then the resistance of the first wafer 11 is 1457 ohm, that is, the first resistance is 1457 ohm, and then a photoresist layer is formed on the second wafer 21, the thickness of the photoresist layer is 13.6K (1.36 μm), and the second wafer 21 is not doped for the second time in the first test, so that the resistance of the second wafer 21 is 1619 ohm, that is, the second resistance is 1619 ohm. As can be seen from fig. 11 and 12, since the second wafer 21 is not doped for the second time, the difference between the first resistance and the second resistance is not large, and therefore the second resistance can also be used as a criterion for whether the resistance changes after the photoresist layer is broken down.
As shown in fig. 12 and table 1, a second test is performed, in which the resistance of the first wafer 11 is 1459 ohms, that is, the first resistance is 1459 ohms, and then the second wafer 21 is doped for a second time, the doping energy of the second doping is 220KeV, that is, the photoresist layer is bombarded by doping ions with the doping energy of 220KeV, and after the second doping is finished and the photoresist layer is removed, the resistance of the second wafer 21 is 1616 ohms, that is, the second resistance is 1616 ohms. As can be seen from Table 1, the difference between the first resistance and the second resistance is not large, and the difference between the first resistance and the second resistance is not large during the first test and the second test, so it can be determined that the second doped non-breakdown photoresist layer, that is, the photoresist layer with a thickness of 13.6K is not broken down by the 220KeV doped ions. As can be seen from fig. 11 and 12, the difference between the first resistance and the second resistance is not large during the second test, so it can be determined that the second test fails to break down the photoresist layer.
As shown in fig. 13 and table 1, a third test was performed, which was different from the second test in that the thickness of the photoresist layer was changed from 13.6K to 11.5K (1.15 μm) in the third test. The first resistance was 1457 ohms and the second resistance was 1614 ohms as measured. Comparing the first test with the second test, the third test failed to break down the photoresist layer, i.e., the photoresist layer with a thickness of 11.5K was not broken down using 220KeV dopant ions. As can be seen from fig. 11 and 13, the difference between the first resistance and the second resistance is not large during the third test, so that it can be determined that the third test fails to break down the photoresist layer.
As shown in fig. 14 and table 1, the fourth test was performed, which differs from the third test in that the photoresist layer was changed from 11.5K to 10K (1 μm) in thickness during the fourth test. The difference between the second resistance and the first resistance becomes large, and the second resistance is changed from 1614 ohms to 4305 ohms through measurement. As can be seen from fig. 11 and 13, the difference between the second resistance and the first resistance is suddenly increased, so that the fourth test breakdown the photoresist layer can be determined by comparing the third test with the fourth test. In the present embodiment, the reason for testing the breakdown photoresist layer for the fourth time is: when the second wafer 21 is doped for the second time, if the doped ions can break through the photoresist layer into the second wafer 21, the second doped ions will break the chemical bond formed by the first doped ions and the silicon atoms. For example, the ions for the first doping of the second wafer 21 are P, and P forms Si — P bonds with Si atoms. The ion doped for the second time is B, which will break the Si-P bond if B enters the second wafer 21, so that the resistance of the second wafer 21 will be increased when measuring the resistance of the second wafer 21. Therefore, as can be seen from fig. 11 and 13, when the fourth test is performed, the second resistance is greater than the first resistance, and the difference between the second resistance and the first resistance is thresholded. In this embodiment, the threshold is 1500, for example.
As shown in fig. 14 and table 1, a fifth test was performed, and the fifth test and the fourth test were different in that the doping energy was changed from 220KeV to 230KeV in the fifth test. The second resistance was measured to be 6740 ohms from 4305 ohms. As can be seen from fig. 11 and 14, the difference between the second resistance and the first resistance becomes larger, so that it can be judged that the fifth test breaks through the photoresist layer compared to the fourth test. Since the doping energy becomes higher in the fifth test, more doping ions can enter the second wafer 21 through the photoresist layer, and thus a large number of Si — P bonds are broken by B, so that the resistance of the second wafer 21 is measured to be larger.
As shown in fig. 14 and table 1, the sixth test was performed, and the sixth test and the fifth test were different in that the doping energy was changed from 230KeV to 280KeV in the sixth test. As a result of the measurement, the resistance of the second wafer 21 cannot be measured, that is, the resistance of the second wafer 21 becomes infinite. As can be seen from fig. 11 and 14, the difference between the second resistance and the first resistance becomes larger, so that it can be judged that the sixth test breaks through the photoresist layer compared to the fifth test. Since the doping energy is higher in the sixth test, more doping ions can enter the second wafer 21 through the photoresist layer, so that most of Si — P bonds are broken by B, and thus the resistance of the second wafer 21 is measured to be larger. Note that the second resistance obtained by the sixth test is not shown in fig. 11 and 12. According to the fourth test and the fifth test, the sixth test can break down the photoresist layer. The second resistance of the wafer 6 in fig. 14 is NA, which indicates that it cannot be measured, i.e., the resistance becomes infinite.
As shown in fig. 11-14, table 1, it is known from the above analysis that when doping ions enter the wafer through the photoresist layer during the second doping, the resistance of the wafer changes, for example, the resistance of the wafer increases. Therefore, when the difference value between the second resistance and the first resistance is larger than the threshold value, the doped ions can be judged to break down the photoresist layer to enter the wafer during the second doping. In this embodiment, the threshold is, for example, 1500 or 1800.
In some embodiments, when the ratio of the second resistance to the first resistance is greater than the threshold, it can be determined that the doped ions break through the photoresist layer into the wafer during the second doping. The threshold value is, for example, 1.5 or 1.8.
As shown in fig. 15-18, table 2, in some embodiments, it can also be determined whether the photoresist layer is broken down according to the thermal conductivity. Referring first to fig. 16-18, wafer 1 in fig. 16 includes a first wafer 11 for measuring a first thermal conductivity and a second wafer 21 for measuring a second thermal conductivity, and wafers 2-6 are the same as wafer 1. Wafer 1 is used for the first test, wafer 2 is used for the second test, and so on.
As shown in fig. 16 and table 2, the first test is performed by first doping the first wafer 11 and the second wafer 21 with a doping energy of 30KeV, a doping ion of P, and a doping dose of 1013/cm2. The thermal conductivity of the first wafer 11 is then measured and defined as the first thermal conductivity of the first wafer 11, the first thermal conductivity 596. A photoresist layer is then formed on the second wafer 21, the photoresist layer having a thickness of 13.6K (1.36 μm), and the second wafer 21 is not doped for the second time during the first test, so that the thermal conductivity of the second wafer 21 is 579, i.e., the second thermal conductivity is 579. It can be seen from FIGS. 15 and 16Since the second wafer 21 is not doped for the second time, the second thermal conductivity is very similar to the first thermal conductivity, and the second thermal conductivity can also be used as a criterion for determining whether the thermal conductivity changes after the photoresist layer is broken down.
As shown in fig. 16 and table 2, the second test was performed, and the second test and the first test were different in that the second test performed the second doping, the doping energy of which was 220KeV, and the ion of which was B. The second thermal conductivity is relatively close to the first thermal conductivity through measurement. As shown in fig. 15 to 16, the second thermal conductivity of the second test and the second thermal conductivity of the first test are not much different from each other in comparison with the first test and the second test, and as can be seen from fig. 16, the distribution diagram of the second thermal conductivity of the first test and the distribution diagram of the second test are very similar, so that it can be determined that the photoresist layer is not broken down in the second test.
As shown in fig. 17 and table 2, the third test was performed, and the third test and the second test were different in that the thickness of the photoresist layer was changed from 13.6K to 11.5K in the third test. The second thermal conductivity was measured to be 592. As can be seen from fig. 16 and 17, comparing the second test and the third test, the second thermal conductivity of the third test is greater than that of the second test, but the difference between the two is not great. Therefore, it can be judged from FIG. 15 that the third test failed to break down the photoresist layer. However, as can be seen from fig. 16, the distribution diagram of the second thermal conductivity at the third test is different from the distribution diagram of the second thermal conductivity at the second test, and therefore, it can be seen from fig. 16 that the third test may break down the photoresist layer. Therefore, as can be seen from table 2, the parameter of the third test may be the critical parameter for breaking down the photoresist layer.
As shown in fig. 17 and table 2, the fourth test was performed, and the difference between the fourth test and the third test was that the thickness of the photoresist layer was changed from 11.5K to 10K in the fourth test. The second thermal conductivity was measured to be 3098. As can be seen from fig. 16 to 17, in comparison with the third test and the fourth test, the second thermal conductivity of the fourth test is much larger than that of the third test, that is, the difference between the second thermal conductivity of the fourth test and the second thermal conductivity of the third test is larger than a preset value, for example, 2000. Therefore, the fourth test breakdown photoresist layer can be determined from FIG. 15. In the present embodiment, the reason for testing the breakdown photoresist layer for the fourth time is that if the breakdown photoresist layer is doped for the second time, the doping ions will bombard the second wafer 21 and enter the second wafer 21. Therefore, the surface structure of the second wafer 21 is changed, and thus the second thermal conductivity of the second wafer 21 is increased, so that whether the photoresist layer is broken down can be determined by the change of the second thermal conductivity. As can be seen from fig. 17, the distribution diagram of the second thermal conductivity in the fourth test is close to the distribution diagram of the second thermal conductivity in the third test, and the fourth test breakdown photoresist layer can be determined according to the change of the second thermal conductivity.
As shown in fig. 18 and table 2, the fifth test was performed, and the difference between the fifth test and the fourth test was that the doping energy of the second doping in the fifth test was changed from 220KeV to 230 KeV. The second thermal conductivity is 3402, that is, the second thermal conductivity in the fifth test is greater than the second thermal conductivity in the fourth test, so that it can be determined that the fifth test breaks through the photoresist layer.
As shown in fig. 18 and table 2, the sixth test was performed, and the sixth test and the fifth test were different in that the doping energy of the second doping in the sixth test was changed from 230KeV to 280 KeV. The second thermal conductivity is 4150, i.e. the second thermal conductivity in the sixth test is larger than the second thermal conductivity in the fifth test, so that it can be determined that the photoresist layer is punctured in the sixth test.
As shown in fig. 16-18, table 2, when the second doping is performed, the doping ions bombard the wafer and enter the wafer, so that the surface structure of the wafer changes, and thus the thermal conductivity of the wafer also changes, for example, the thermal conductivity of the wafer increases. Therefore, when the difference value between the second thermal conductivity and the first thermal conductivity is larger than the preset value, the fact that the second doping can break down the photoresist layer can be judged. In this embodiment, the preset value is, for example, 2000.
In some embodiments, when the ratio of the second thermal conductivity to the first thermal conductivity is greater than a predetermined value, it can be determined that the doped ions break through the photoresist layer and enter the wafer during the second doping. The threshold value is, for example, 5 or 6.
As shown in fig. 19, the present embodiment further provides a detection system 300, wherein the detection system 300 is used for detecting the blocking capability of the photoresist layer. The inspection system 300 includes a resistance measurement unit 301, a photoresist layer formation unit 302, a stripping unit 303, and a comparison unit 304.
As shown in fig. 3 and 19, in the present embodiment, the resistance measurement unit 301 is used for measuring the resistance of the wafer, for example, the first wafer 11 and the second wafer 21. Before measuring the resistances of the first wafer 11 and the second wafer 21, the first wafer 11 and the second wafer 21 are first doped to form a first doped region a in the first wafer 11 and the second wafer 21, and then annealed. The resistance of the first wafer 11 is defined as a first resistance by the measurement of the resistance measurement unit 301. The first wafer 11 and the second wafer 21 are the same wafer, for example, wafers of the first doping type. In this embodiment, the ion doping type of the first doping is a second doping type, and the first doping type is different from the second doping type. In addition, the resistance measuring unit 301 measures only the resistance of the first wafer 11 when performing the first operation. The resistance of the first wafer 11 is also the resistance of the second wafer 21. The resistance measuring unit 301 may be a probe measuring device.
As shown in fig. 7 and 19, a second wafer 21 is placed in the photoresist layer forming unit 302, a photoresist layer 22 is formed on the second wafer 21, and then the second wafer 21 is placed in the doping unit to perform a second doping process on the second wafer 21. The photoresist layer forming unit 302 may include a coater, a developer, and an exposure machine.
As shown in fig. 19, the second wafer 21 is placed in the peeling unit 303, the photoresist layer 22 is removed, and then the second wafer 21 is placed in the resistance measuring unit 301, the resistance of the second wafer 21 is measured, and the resistance of the second wafer 21 is defined as the second resistance.
As shown in fig. 19, the first resistor and the second resistor are inputted into the comparison unit 304, if the difference between the second resistor and the first resistor is greater than the threshold, the second doping breakdown photoresist layer is determined, and if the difference between the second resistor and the first resistor is less than the threshold, the second doping non-breakdown photoresist layer is determined.
As shown in fig. 19, in some embodiments, the resistance measurement unit 301 may also be replaced with a thermal conductivity measurement unit.
As shown in fig. 19, in some embodiments, the thermal conductivity measurement unit and the electrical resistance measurement unit 301 may also be used simultaneously, for example, by measuring the thermal conductivity of the wafer by the thermal conductivity and then measuring the electrical resistance of the wafer by the electrical resistance measurement unit 301, thereby performing mutual verification.
In some embodiments, as shown in FIG. 19, photoresist layers with different thicknesses may also be formed on the same wafer, for example, the thickness of the first photoresist layer is greater than that of the first photoresist layer, and then the blocking capabilities of the first photoresist layer and the second photoresist layer may be compared by the inspection system.
In summary, the present invention provides a method and a system for detecting the blocking capability of a photoresist layer, which first provide a first wafer and a second wafer, first form a first doped region in the first wafer and the second wafer, then perform annealing, and measure the resistance of the first wafer, wherein the first wafer and the second wafer have the same resistance because the first wafer and the second wafer have the same structure; and forming a photoresist layer on the second wafer, doping the first doped region for the second time through the photoresist layer, and measuring the resistance of the second wafer. The first time doped ions can form chemical bonds with silicon atoms after annealing, if the second time doped ions enter the first doped region through the photoresist layer, the second time doped ions destroy the chemical bonds formed by the first time doped ions and the silicon atoms, so that the resistance of the second wafer is increased, if the difference value between the resistance of the second wafer and the resistance of the first wafer is larger than a threshold value, the photoresist layer can be judged to be broken down by the implanted ions, otherwise, the photoresist layer can be judged not to be broken down by the implanted ions.
In summary, when measuring the resistance of the first wafer, the thermal conductivity of the first wafer may also be measured, and when measuring the resistance of the second wafer, the thermal conductivity of the second wafer may also be measured. If the difference value between the thermal conductivity of the second wafer and the thermal conductivity of the first wafer is larger than a preset value, the second-time doping breaks down the light resistance layer; and if the difference value between the thermal conductivity of the second wafer and the thermal conductivity of the first wafer is smaller than a preset value, the second doping does not break down the photoresist layer. In this embodiment, the two methods for detecting the blocking capability of the photoresist layer can be verified mutually, and when the two methods are used simultaneously, the thermal conductivity can be firstly detected, and then the resistance can be detected, so as to prevent the damage to the surface structure of the wafer in the resistance test process.
Reference throughout this specification to "one embodiment", "an embodiment", or "a specific embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment, and not necessarily all embodiments, of the present invention. Thus, respective appearances of the phrases "in one embodiment", "in an embodiment", or "in a specific embodiment" in various places throughout this specification are not necessarily referring to the same embodiment. Furthermore, the particular features, structures, or characteristics of any specific embodiment of the present invention may be combined in any suitable manner with one or more other embodiments. It is to be understood that other variations and modifications of the embodiments of the invention described and illustrated herein are possible in light of the teachings herein and are to be considered as part of the spirit and scope of the present invention.
It will also be appreciated that one or more of the elements shown in the figures can also be implemented in a more separated or integrated manner, or even removed for inoperability in some circumstances or provided for usefulness in accordance with a particular application.
Additionally, any reference arrows in the drawings/figures should be considered only as exemplary, and not limiting, unless otherwise expressly specified. Further, as used herein, the term "or" is generally intended to mean "and/or" unless otherwise indicated. Combinations of components or steps will also be considered as being noted where terminology is foreseen as rendering the ability to separate or combine is unclear.
As used in the description herein and throughout the claims that follow, "a", "an", and "the" include plural references unless otherwise indicated. Also, as used in the description herein and throughout the claims that follow, unless otherwise indicated, the meaning of "in …" includes "in …" and "on … (on)".
The above description of illustrated embodiments of the invention, including what is described in the abstract of the specification, is not intended to be exhaustive or to limit the invention to the precise forms disclosed herein. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes only, various equivalent modifications are possible within the spirit and scope of the present invention, as those skilled in the relevant art will recognize and appreciate. As indicated, these modifications may be made to the present invention in light of the foregoing description of illustrated embodiments of the present invention and are to be included within the spirit and scope of the present invention.
The systems and methods have been described herein in general terms as the details aid in understanding the invention. Furthermore, various specific details have been given to provide a general understanding of the embodiments of the invention. One skilled in the relevant art will recognize, however, that an embodiment of the invention can be practiced without one or more of the specific details, or with other apparatus, systems, assemblies, methods, components, materials, parts, and/or the like. In other instances, well-known structures, materials, and/or operations are not specifically shown or described in detail to avoid obscuring aspects of embodiments of the invention.
Thus, although the present invention has been described herein with reference to particular embodiments thereof, a latitude of modification, various changes and substitutions are intended in the foregoing disclosures, and it will be appreciated that in some instances some features of the invention will be employed without a corresponding use of other features without departing from the scope and spirit of the invention as set forth. Thus, many modifications may be made to adapt a particular situation or material to the essential scope and spirit of the present invention. It is intended that the invention not be limited to the particular terms used in following claims and/or to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the invention will include any and all embodiments and equivalents falling within the scope of the appended claims. Accordingly, the scope of the invention is to be determined solely by the appended claims.
Claims (9)
1. A method for detecting the blocking capability of a photoresist layer is characterized by comprising the following steps:
providing a first wafer and a second wafer, wherein the first wafer and the second wafer are wafers of a first doping type, and the first wafer and the second wafer have the same structure;
performing first doping on the first wafer and the second wafer to form a first doped region in the first wafer and the second wafer, wherein the ion type of the first doping is a second doping type, and the second doping type is different from the first doping type;
annealing the first wafer and the second wafer, measuring the resistance of the first wafer, and defining the resistance as a first resistance;
forming a photoresist layer on the second wafer;
doping the first doped region of the second wafer for the second time;
removing the photoresist layer, measuring the resistance of the second wafer, and defining the resistance as a second resistance;
if the difference value between the second resistance and the first resistance is larger than the threshold value, the photoresist layer is broken down by the second doping, and if the difference value between the second resistance and the first resistance is smaller than the threshold value, the photoresist layer is not broken down by the second doping.
2. The detection method according to claim 1, wherein when the first doping type is P-type, the second doping type is N-type; and when the first doping type is an N type, the second doping type is a P type.
3. The detection method according to claim 1, wherein the doping amount of the first doping is 1011-1015/cm2The doping amount of the second doping is 1010-1016/cm2In the meantime.
4. The detection method according to claim 1, wherein the doping energy of the first doping is between 1 and 50KeV, and the doping energy of the second doping is between 1 and 8000 KeV.
5. The detection method according to claim 1, wherein the temperature of the annealing treatment comprises 850-1100 ℃ and the time of the annealing treatment comprises 0-10 minutes.
6. The method of claim 1, wherein the photoresist layer covers the first doped region.
7. The inspection method of any one of claims 1 to 6, wherein in measuring the electrical resistance of the first wafer, the thermal conductivity of the first wafer is also measured.
8. The inspection method according to claim 7, wherein in measuring the electrical resistance of the second wafer, the thermal conductivity of the second wafer is also measured; if the difference between the thermal conductivity of the second wafer and the thermal conductivity of the first wafer is larger than a preset value, the second doping breaks through the light resistance layer, and if the difference between the thermal conductivity of the second wafer and the thermal conductivity of the first wafer is smaller than the preset value, the second doping does not break through the light resistance layer.
9. A system for detecting the blocking capability of a photoresist layer, comprising:
the resistance measuring unit is used for measuring the resistance of a first wafer and a second wafer, defining the resistance of the first wafer as a first resistance, and defining the resistance of the second wafer as a second resistance;
a photoresist layer forming unit for forming a photoresist layer on the second wafer;
the stripping unit is used for stripping the photoresist layer; before measuring the resistance of the first wafer, carrying out first doping on the first wafer and the second wafer so as to form a first doped region in the first wafer and the second wafer, and carrying out annealing treatment on the first wafer and the second wafer; before measuring the resistance of the second wafer, carrying out second doping on the first doped region of the second wafer, and stripping the photoresist layer through the stripping unit;
the first wafer and the second wafer are wafers of a first doping type, the first wafer and the second wafer have the same structure, the ion type of the first doping is a second doping type, and the second doping type is different from the first doping type;
and the comparison unit is used for comparing the first resistor with the second resistor, if the difference value between the second resistor and the first resistor is greater than a threshold value, the photoresist layer is broken down by the second doping, and if the difference value between the second resistor and the first resistor is less than the threshold value, the photoresist layer is not broken down by the second doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010937768.7A CN111933545B (en) | 2020-09-09 | 2020-09-09 | Method and system for detecting blocking capability of photoresist layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010937768.7A CN111933545B (en) | 2020-09-09 | 2020-09-09 | Method and system for detecting blocking capability of photoresist layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111933545A CN111933545A (en) | 2020-11-13 |
| CN111933545B true CN111933545B (en) | 2020-12-22 |
Family
ID=73310069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010937768.7A Active CN111933545B (en) | 2020-09-09 | 2020-09-09 | Method and system for detecting blocking capability of photoresist layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111933545B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI305022B (en) * | 2003-12-26 | 2009-01-01 | Mosel Vitelic Inc | Method of monitoring ion implanter |
| CN103151281B (en) * | 2011-12-07 | 2015-11-25 | 无锡华润上华科技有限公司 | A kind of monitoring method of ion implantation technology |
| CN103887200A (en) * | 2014-03-24 | 2014-06-25 | 京东方科技集团股份有限公司 | Method for detecting light-resistant layer resisting capacity |
| CN110047773A (en) * | 2019-04-28 | 2019-07-23 | 德淮半导体有限公司 | The monitoring method and semiconductor structure of ion implantation energy |
-
2020
- 2020-09-09 CN CN202010937768.7A patent/CN111933545B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111933545A (en) | 2020-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100294063B1 (en) | How to determine and deal with defects on wafers using improved submicron technology | |
| US5861632A (en) | Method for monitoring the performance of an ion implanter using reusable wafers | |
| US9696368B2 (en) | Semiconductor substrate evaluating method, semiconductor substrate for evaluation, and semiconductor device | |
| US6673640B2 (en) | Method of manufacturing semiconductor device for evaluation capable of evaluating crystal defect using in-line test by avoiding using preferential etching process | |
| CN111933545B (en) | Method and system for detecting blocking capability of photoresist layer | |
| US4013483A (en) | Method of adjusting the threshold voltage of field effect transistors | |
| EP1220322A2 (en) | High breakdown-voltage semiconductor device | |
| CN106898546B (en) | Method for monitoring Ge ion implantation quality | |
| JP3732220B1 (en) | Ion implantation dose distribution evaluation method | |
| US7259027B2 (en) | Low energy dose monitoring of implanter using implanted wafers | |
| JP5652379B2 (en) | Semiconductor substrate evaluation method and semiconductor substrate for evaluation | |
| US6777251B2 (en) | Metrology for monitoring a rapid thermal annealing process | |
| US6313480B1 (en) | Structure and method for evaluating an integrated electronic device | |
| JP2005072591A (en) | Method for judging misalignment in ion implantation | |
| JP2592966B2 (en) | Ion implantation method and apparatus | |
| CN107316856B (en) | Structure for detecting ion implantation abnormality, method for manufacturing same, and method for detecting ion implantation abnormality | |
| JPH11126810A (en) | Measurement method of crystal defect | |
| JP3248506B2 (en) | Semiconductor device and method of inspecting contact resistance thereof | |
| CN111799159B (en) | Method and system for detecting detection sensitivity of semiconductor equipment | |
| JP3919200B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP7176483B2 (en) | Evaluation method of semiconductor substrate and semiconductor substrate for evaluation | |
| US6869215B2 (en) | Method and apparatus for detecting contaminants in ion-implanted wafer | |
| KR100872803B1 (en) | Method of fabrication pn junction and method of testing device using the same | |
| JPH04162618A (en) | Manufacture of semiconductor device; ion implantation apparatus; semiconductor device | |
| US20060068558A1 (en) | Process and installation for doping an etched pattern of resistive elements |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240407 Address after: 230000 No. 88, xifeihe Road, Hefei comprehensive free trade zone, Xinzhan District, Hefei City, Anhui Province Patentee after: Nexchip Semiconductor Corporation Country or region after: China Address before: No.18-h1105, Yinchun Road, science and technology R & D base, Maigaoqiao entrepreneurship Park, Qixia District, Nanjing, Jiangsu Province, 210000 Patentee before: Nanjing crystal drive integrated circuit Co.,Ltd. Country or region before: China |