JPH04162618A - Manufacture of semiconductor device; ion implantation apparatus; semiconductor device - Google Patents

Manufacture of semiconductor device; ion implantation apparatus; semiconductor device

Info

Publication number
JPH04162618A
JPH04162618A JP28701990A JP28701990A JPH04162618A JP H04162618 A JPH04162618 A JP H04162618A JP 28701990 A JP28701990 A JP 28701990A JP 28701990 A JP28701990 A JP 28701990A JP H04162618 A JPH04162618 A JP H04162618A
Authority
JP
Japan
Prior art keywords
temperature
semiconductor substrate
ion implantation
defect
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28701990A
Inventor
Mitsuharu Honda
Tadashi Kamata
Nobuyoshi Kashu
Tadashi Suzuki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP28701990A priority Critical patent/JPH04162618A/en
Publication of JPH04162618A publication Critical patent/JPH04162618A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26593Bombardment with radiation with high-energy radiation producing ion implantation at a temperature lower than room temperature

Abstract

PURPOSE: To surely reduce a defect which is produced at an ion implantation operation and which is left by a method wherein, immediately after ions have been implanted in a low-temperature state, a semiconductor substrate is heated to a high temperature.
CONSTITUTION: During the period from the start of an ion implantation treatment to the activation treatment of a substance introduced into a semiconductor substrate 1, the temperature of the semiconductor substrate 1 is kept at -100°C or lower. Immediately after the finish of the ion implantation treatment, the semiconductor substrate 1 is heated by using a halogen lamp, microwaves or an energy beam in such a way that the time required for the temperature rise up to a temperature of 600°C or higher is within one minute. This apparatus is provided with the following: a specimen stand used to hold the semiconductor substrate 1 so as to be freely detachable; an ion-beam formation means used to radiate the ion beam of a desired substance; a cooling means used to cool the substrate 1 down to -100°C or lower; and a heating means used to heat it instantaneously up to 600°C or higher. Thereby, it is possible to avoid that a defect 2 produced at the ion implantation treatment is stabilized when it is left at a temperature near room temperature, the defect 2 can be restored easily by a heating treatment, and the residual defect 2 can be reduced surely.
COPYRIGHT: (C)1992,JPO&Japio
JP28701990A 1990-10-26 1990-10-26 Manufacture of semiconductor device; ion implantation apparatus; semiconductor device Pending JPH04162618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28701990A JPH04162618A (en) 1990-10-26 1990-10-26 Manufacture of semiconductor device; ion implantation apparatus; semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28701990A JPH04162618A (en) 1990-10-26 1990-10-26 Manufacture of semiconductor device; ion implantation apparatus; semiconductor device

Publications (1)

Publication Number Publication Date
JPH04162618A true JPH04162618A (en) 1992-06-08

Family

ID=17711987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28701990A Pending JPH04162618A (en) 1990-10-26 1990-10-26 Manufacture of semiconductor device; ion implantation apparatus; semiconductor device

Country Status (1)

Country Link
JP (1) JPH04162618A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239441B1 (en) 1997-01-20 2001-05-29 Kabushiki Kaisha Toshiba Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
WO2009102752A3 (en) * 2008-02-11 2009-10-08 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
JP2010118382A (en) * 2008-11-11 2010-05-27 Sumco Corp Method of reducing crystal defect of simox wafer
JP2012525709A (en) * 2009-05-01 2012-10-22 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Formation of raised source / drain on the strained thin films low carbon and / or molecular carbon implanted

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239441B1 (en) 1997-01-20 2001-05-29 Kabushiki Kaisha Toshiba Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
US6365492B1 (en) 1997-01-20 2002-04-02 Kabushiki Kaisha Toshiba Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
US6570169B2 (en) 1997-01-20 2003-05-27 Kabushiki Kaisha Toshiba Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
WO2009102752A3 (en) * 2008-02-11 2009-10-08 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
JP2010118382A (en) * 2008-11-11 2010-05-27 Sumco Corp Method of reducing crystal defect of simox wafer
JP2012525709A (en) * 2009-05-01 2012-10-22 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Formation of raised source / drain on the strained thin films low carbon and / or molecular carbon implanted

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