CN103904009B - A kind of monitoring ion implanter stability and the method for uniformity - Google Patents
A kind of monitoring ion implanter stability and the method for uniformity Download PDFInfo
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- CN103904009B CN103904009B CN201410161246.7A CN201410161246A CN103904009B CN 103904009 B CN103904009 B CN 103904009B CN 201410161246 A CN201410161246 A CN 201410161246A CN 103904009 B CN103904009 B CN 103904009B
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Abstract
The invention discloses a kind of monitoring ion implanter stability and the method for uniformity, by first forming the decrystallized barrier layer of germanium on sample to be tested wafer substrate surface, to reduce the wafer ion implanting degree of depth in monitored ion implantation apparatus subsequently, again through high annealing to form the doped silicon germanium alloy with excellent conductive performance at crystal column surface, such that it is able to the probe accurate measurement RS that directly employing four-point probe is common, it is achieved the stability of accurate monitoring ion implanter and uniformity.Therefore, the use of the present invention reduces the cost of measurement, extends the service life of measurement platform；Meanwhile, the method for the present invention is effectively improved the Stability and veracity that RS measures, and greatly reduces machine of the delaying risk caused because of erroneous judgement, improves the production capacity of ion injection machine table.
Description
Technical field
The method that the present invention relates to monitoring ion implanter performance in a kind of semiconductor manufacturing, more particularly, to a kind of by reduce the ion implanting degree of depth thus can the method for accurate measurement wafer square resistance, for stability and the uniformity of monitoring ion implanter.
Background technology
Feature dimensions that the development need of highly integrated circuit is less and closer to circuit devcie spacing.And the production of advanced circuit has been limited by thermal diffusion.Its limited part be horizontal proliferation, ultra-shallow junctions, doping of poor quality control, the interference of surface contamination and the generation of dislocation.
Ion implantation technique then overcomes the above-mentioned restriction of diffusion, also provides extra advantage simultaneously.Not having lateral diffusion in ion implantation process, technique is carried out at approximately room temperature, and foreign atom is placed in below crystal column surface, and make wide range of concentrations is doped to possibility simultaneously.There is ion implanting, position and the quantity of doping in wafer can be better controlled.Therefore, ion implantation technique occupies an important position in semiconductor fabrication.Diffusion is a chemical process, and ion implanting is a physical process.Ion implantation technology uses gaseous state and the impurity source material of solid-state.In ion implantation process, foreign atom is ionized, separates, accelerates (acquisition kinetic energy), forms ion beam current, inswept wafer.Foreign atom carries out physical bombardment to wafer, enters crystal column surface and stops below surface.
Ion implantation apparatus is the equipment for ion implantation technology, is subsystem integrated of multiple extremely complex precision.Conventional ion implanting can include that middle current ion is injected, high current ion injects and energetic ion injects.In ion implantation technology, atomic quantity (implantation dosage) is to be determined by ion beam current density (amount of ions in every sq) and injection length.Dosage can be strictly controlled by measuring ion current.During ion implanting, due to the collision of incident ion, wafer crystal structure can sustain damage.Repairing lens lesion can be by realizing the heating anneal of wafer.
Wafer variations after ion implanting may be from many factors: the uniformity of line, the change of voltage, the change of scanning and the problem of mechanical system that ion implantation apparatus produces.These potential problems are likely to result in the change of the square resistance bigger than diffusion technique.
Along with the development of semiconductor fabrication, technology stability and uniformity to ion implantation apparatus have had higher requirement.Effectively monitor stability and the uniformity of ion implantation apparatus, reflect the situation of ion implantation apparatus exactly, significant to the stability of the existing semiconductor fabrication process of holding and the research and development to new technology.
Stability and the appraisal procedure of these processing qualities of uniformity to ion implanting wafer, a kind of method is to use heat wave survey meter (TW) to detect the surface damage of wafer after injection.But this detection means can only characterize the situation of crystal column surface, the ion situation being injected into inside cannot be monitored, thus there is certain limitation.
Another conventional monitoring method is to the wafer after ion implanting after carrying out high annealing, uses four-point probe to measure the square resistance (RS) of wafer ion implanted layer.The square resistance of ion implanted layer is an important electrical parameter of semi-conducting material, and it is defined as surface is foursquare semiconductor lamella, at the resistance that the sense of current being parallel to square limit is presented.When ion implantation dosage deficiency, square resistance is higher；Otherwise, when dosage is excessive, then square resistance is relatively low.
For ion implantation apparatus more than high energy implanters and middle electric current, owing to its Implantation Energy is higher, foreign atom can be injected into from the deeper position of crystal column surface, and the concentration of surface doping atom is relatively low after annealing, causes its electric conductivity to be easily subject to impact.In this case, if using the common probe of four-point probe to measure, will occur cannot accurate measurement to the phenomenon of the RS of wafer, cause RS measurement is insensitive.Current solution is a kind of probe using gauge head sharper, substitutes common probe measurement and accepts high energy and the RS of middle electric current above ion implanting wafer.For the relatively common probe of probe that this gauge head is sharper, expensive and service life is shorter, it is only about two months.While increasing measurement cost, also can cause the increase of measurement platform frequency of maintenance.And, when using the sharper probe of this gauge head, also the job insecurity because of the ion implantation apparatus being measured it is easy to, or because being in the measurement unstable properties that the later stage in service life of this probe causes, and cause wafer measurement beyond specification, cause the erroneous judgement to ion implantation apparatus state and machine of delaying.This causes interference to the properly functioning of ion implantation apparatus, and have impact on the production capacity of board further.The stability of monitoring ion implanter and uniformity the most more accurately, improves the life-span of measurement platform, it is to avoid cause the machine of delaying to affect the generation of production capacity phenomenon because measuring inaccurate problem, is our problem anxious to be resolved.
Summary of the invention
It is an object of the invention to the drawbacks described above overcoming prior art to exist, a kind of new monitoring ion implanter stability and the method for uniformity are provided, by first forming the decrystallized barrier layer of germanium on sample to be tested wafer substrate surface, to reduce the wafer ion implanting degree of depth in monitored ion implantation apparatus subsequently, again through high annealing to form the doped silicon germanium alloy with excellent conductive performance at crystal column surface, such that it is able to the probe accurate measurement RS that directly employing four-point probe is common, it is achieved the stability of accurate monitoring ion implanter and uniformity.
For achieving the above object, technical scheme is as follows:
A kind of monitoring ion implanter stability and the method for uniformity, comprise the following steps:
Step one: carry out germanium ion injection in sample to be tested wafer substrate, to form the decrystallized barrier layer of germanium at described crystal column surface；
Step 2: the wafer with the decrystallized barrier layer of germanium obtained in step one is put into the ion implantation apparatus needing monitoring, carries out the ion implantation technology of routine, the decrystallized barrier layer of germanium utilizing described wafer to be formed, reduces the injection degree of depth of ion；
Step 3: the wafer injected in step 2 is carried out high annealing, to form the sige alloy of doping at described crystal column surface；
Step 4: the described wafer to the sige alloy forming doping obtained in step 3, utilizes the excellent conductive performance that it has, and uses four-point probe to measure the square resistance of described wafer implanted layer；
Step 5: according to the measuring value result of square resistance, stability and uniformity to ion implantation apparatus judge, thus realize the monitoring management to the ion implantation apparatus needing monitoring.
For the normal ion implanting of same dose, middle and high-energy is injected owing to injecting the deepest, foreign atom can be injected into from the deeper position of crystal column surface, the concentration of surface doping atom is relatively low after annealing, its electric conductivity is caused to be easily subject to impact, in turn result in and use the common detection head of four-point probe when measuring, it may occur that cannot accurate measurement to the phenomenon of the RS of wafer, cause RS measurement is insensitive；And when using the sharper probe of gauge head, also the job insecurity because of the ion implantation apparatus being measured it is easy to, or because being in the measurement unstable properties that the later stage in service life of this probe causes, and cause wafer measurement beyond specification, cause the erroneous judgement to ion implantation apparatus state and machine of delaying.The decrystallized barrier layer of germanium can reduce the degree of depth of ion implanting, and it stops that mechanism is owing to decrystallized barrier layer can effectively reduce the impact of channelling effect.Therefore, by forming the decrystallized barrier layer of germanium, foreign atom can be stoped to be injected into from the deeper position of crystal column surface, avoid the phenomenon that the surface doping atomic concentration produced after annealing is relatively low, effectively prevent its electric conductivity to be affected, thus the electric conductivity that the available doped silicon germanium alloy formed is good, use the common detection head of four-point probe, just can be with the RS of accurate measurement wafer implanted layer, it is achieved the stability of accurate monitoring ion implanter and uniformity.
Further, in step one, the ion implanting standard board with the ion implantation apparatus homotype needing monitoring is used to carry out germanium ion injection, to ensure higher comparability and the concordance of standard.
Further, in step one, described germanium ion injects and uses conventional germanium ion injection technology.
Further, in step one, energy when described germanium ion injects is 10～50keV.
Further, in step one, dosage when described germanium ion injects is 1E15～5E15atom/cm2。
Further, in step one, the thickness on the decrystallized barrier layer of germanium that described crystal column surface is formed is 20nm～200nm.
The technological parameter that above-mentioned germanium ion injects specifically can determine according to different process and monitoring needs.
Further, in step 3, quick thermal treatment process is used to carry out high annealing the wafer injected in step 2.
Further, the temperature of described quick thermal treatment process is 950～1100 DEG C.
Further, the time of described quick thermal treatment process is 20～40s.
Above-mentioned process of thermal treatment parameter specifically can determine according to different process and monitoring needs.
Further, described quick thermal treatment process uses N2Or other noble gases are as protective gas.
Can be seen that from technique scheme, the present invention by first forming the decrystallized barrier layer of germanium on sample to be tested wafer substrate surface, to reduce the wafer ion implanting degree of depth in monitored ion implantation apparatus subsequently, again through high annealing to form the doped silicon germanium alloy with excellent conductive performance at crystal column surface, such that it is able to the probe accurate measurement RS that directly employing four-point probe is common, it is achieved the stability of accurate monitoring ion implanter and uniformity.Therefore, the use of the present invention reduces the cost of measurement, extends the service life of measurement platform；Meanwhile, the method for the present invention is effectively improved the Stability and veracity that RS measures, and energy accurately monitoring ion injects stability and the uniformity of board, and greatly reduces machine of the delaying risk caused because of erroneous judgement, improves the production capacity of ion injection machine table.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method for the present invention a kind of monitoring ion implanter stability and uniformity；
When Fig. 2 is the method using the present invention, wafer forms the schematic diagram on the decrystallized barrier layer of germanium；
Fig. 3 is the schematic diagram that the wafer forming the decrystallized barrier layer of germanium in Fig. 2 proceeds ion implanting.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the detailed description of the invention of the present invention is described in further detail.
In the present embodiment, the schematic flow sheet that Fig. 1, Fig. 1 are the methods of the present invention a kind of monitoring ion implanter stability and uniformity is referred to.As it can be seen, monitoring ion implanter stability of the present invention and the method for uniformity, including below scheme step:
First, it is provided that a sample to be tested wafer substrate；
Secondly, the ion implanting standard board of the ion implantation apparatus homotype used and need monitoring, to ensure higher comparability and the concordance of standard, the germanium ion injection technology using routine in sample to be tested wafer substrate carries out germanium ion injection, to form the decrystallized barrier layer of germanium at described crystal column surface；Energy when described germanium ion injects is 10～50keV, and dosage is 1E15～5E15atom/cm2, and form, at described crystal column surface, the decrystallized barrier layer of germanium that thickness is 20nm～200nm；Ion implanting standard board can be operated specifically determine according to different process and monitoring needs by these technological parameters, and control realization process results；
Then, the wafer with the decrystallized barrier layer of germanium obtained is put into the ion implantation apparatus needing monitoring, carry out the ion implantation technology of routine, the decrystallized barrier layer of germanium utilizing described wafer to be formed, reduce the injection degree of depth of ion；
Then, the wafer completed aforementioned injection is at N2Or rapid thermal treatment (RTP) equipment of other inert gas atmospheres is carried out temperature be 950～1100 DEG C, the time be 20～40s high annealing, to form the sige alloy of doping at described crystal column surface；Process of thermal treatment parameter specifically can determine according to different process and monitoring needs；
Afterwards, the described wafer to the sige alloy forming doping obtained, utilize the excellent conductive performance that it has, use four-point probe to measure the square resistance of described wafer implanted layer；Common detection head can be used accurately to measure；
Finally, the measuring value result of square resistance being contrasted with controlling specification, and decision making, stability and uniformity to ion implantation apparatus judge accordingly, can characterize board by the meansigma methods of square resistance and deviation the most stable；When the measuring value of square resistance is when controlling in specification limit, it is determined that measure normal, as the foundation that monitoring is qualified；If the measuring value of square resistance is beyond when controlling specification, reason need to be analyzed to the ill and solve problem, implementing monitoring process the most again.
The present invention is by above-mentioned monitoring process step, it is achieved thereby that the ion implantation apparatus monitoring management accurately to needs monitoring.
In the method for the invention, make use of the decrystallized barrier layer of germanium can reduce the characteristic of the ion implanting degree of depth, it stops that mechanism can be illustrated by Fig. 2 and Fig. 3.
Refer to wafer when Fig. 2, Fig. 2 are the methods using the present invention and form the schematic diagram on the decrystallized barrier layer of germanium.During as it can be seen, use the germanium ion injection technology of routine to carry out germanium ion injection on sample to be tested wafer 1, can form, at described crystal column surface, the decrystallized barrier layer 2 of germanium that a desired thickness is 20nm～200nm.
For the normal ion implanting of same dose, middle and high-energy is injected owing to injecting the deepest, foreign atom can be injected into from the deeper position of crystal column surface, the concentration of surface doping atom is relatively low after annealing, its electric conductivity is caused to be easily subject to impact, in turn result in and use the common detection head of four-point probe when measuring, it may occur that cannot accurate measurement to the phenomenon of the RS of wafer, cause RS measurement is insensitive；And when using the sharper probe of gauge head, also the job insecurity because of the ion implantation apparatus being measured it is easy to, or because being in the measurement unstable properties that the later stage in service life of this probe causes, and cause wafer measurement beyond specification, cause the erroneous judgement to ion implantation apparatus state and machine of delaying.
It it is the schematic diagram that the wafer forming the decrystallized barrier layer of germanium in Fig. 2 is proceeded ion implanting please continue to refer to Fig. 3, Fig. 3.As it can be seen, the wafer 1 with the decrystallized barrier layer of germanium 2 obtained in Fig. 2 to be put into the ion implantation apparatus needing monitoring, carry out the ion implantation technology of routine.Position as indicated by the arrows in the figure, the decrystallized barrier layer of germanium 2 formed seen from wafer 1 blocks ion and continues the injection to deep layer, thus reduces the injection degree of depth of ion.
The decrystallized barrier layer of germanium can reduce the degree of depth of ion implanting, and it stops that mechanism is owing to decrystallized barrier layer can effectively reduce the impact of channelling effect.Therefore, by forming the decrystallized barrier layer of germanium, foreign atom can be stoped to be injected into from the deeper position of crystal column surface, avoid the phenomenon that the surface doping atomic concentration produced after annealing is relatively low, effectively prevent its electric conductivity to be affected, thus the electric conductivity that the available doped silicon germanium alloy formed is good, use the common detection head of four-point probe, just can be with the RS of accurate measurement wafer implanted layer, it is achieved the stability of accurate monitoring ion implanter and uniformity.
Below by instantiation, remarkable result that the present invention produce is expanded on further.
A sample wafer substrate is normally carried out energy is 1200keV, dosage is 1E14atom/cm2P+ when injecting, after the RTP of 950 DEG C, 20s anneals, measure RS instability with common probe, use instead and measure RS value for 926ohm/sq close to the probe that the gauge head in service life is sharper, beyond specification limit, illustrate that board is abnormal, need to confirm board state.Germanium ion injection is carried out another sample wafer substrate is increased conventional germanium ion injection technology, after forming the decrystallized barrier layer of 100nm germanium, after using same process parameter again, carrying out injecting and annealing in identical board, measuring RS value with common probe is 551ohm/sq, meet and judge specification requirement accordingly, judge that this monitored ion injection machine table is normal accordingly, thus avoid an erroneous judgement to ion implantation apparatus state and the accident of machine of delaying.
It should be noted that when using the present invention, it is impossible to use the RS of existing original technique to judge specification, the sample wafer after increasing the decrystallized barrier layer of germanium is carried out RS measurement, and needs according to data accumulation, reformulate corresponding RS and judge specification.Further, general, should be noted that, for homotype board, RS judges that the scope of specification is consistent；And for different shaped board, its RS judges that the scope of specification is difference, to prevent the misunderstanding to the present invention and improper utilization.
Above-described only the preferred embodiments of the present invention; described embodiment is also not used to limit the scope of patent protection of the present invention; the equivalent structure change that the description of the most every utilization present invention and accompanying drawing content are made, in like manner should be included in protection scope of the present invention.
Claims (10)
1. a monitoring ion implanter stability and the method for uniformity, it is characterised in that comprise the following steps:
Step one: carry out germanium ion injection in sample to be tested wafer substrate, to form the decrystallized barrier layer of germanium at described crystal column surface；
Step 2: the wafer with the decrystallized barrier layer of germanium obtained in step one is put into the ion implantation apparatus needing monitoring, carries out the ion implantation technology of routine, the decrystallized barrier layer of germanium utilizing described wafer to be formed, reduces the injection degree of depth of ion；
Step 3: the wafer injected in step 2 is carried out high annealing, to form the sige alloy of doping at described crystal column surface；
Step 4: the described wafer to the sige alloy forming doping obtained in step 3, utilizes the excellent conductive performance that it has, and uses four-point probe to measure the square resistance of described wafer implanted layer；
Step 5: according to the measuring value result of square resistance, stability and uniformity to ion implantation apparatus judge, thus realize the monitoring management to the ion implantation apparatus needing monitoring.
2. monitoring ion implanter stability as claimed in claim 1 and the method for uniformity, it is characterised in that in step one, uses the ion implanting standard board with the ion implantation apparatus homotype needing monitoring to carry out germanium ion injection.
3. monitoring ion implanter stability as claimed in claim 1 and the method for uniformity, it is characterised in that in step one, described germanium ion injects and uses conventional germanium ion injection technology.
4. the monitoring ion implanter stability as described in claim 1,2 or 3 and the method for uniformity, it is characterised in that in step one, energy when described germanium ion injects is 10～50keV.
5. the monitoring ion implanter stability as described in claim 1,2 or 3 and the method for uniformity, it is characterised in that in step one, dosage when described germanium ion injects is 1E15～5E15atom/cm2。
6. monitoring ion implanter stability as claimed in claim 1 and the method for uniformity, it is characterised in that in step one, the thickness on the decrystallized barrier layer of germanium that described crystal column surface is formed is 20nm～200nm.
7. monitoring ion implanter stability as claimed in claim 1 and the method for uniformity, it is characterised in that in step 3, uses quick thermal treatment process to carry out high annealing the wafer injected in step 2.
8. monitoring ion implanter stability as claimed in claim 7 and the method for uniformity, it is characterised in that the temperature of described quick thermal treatment process is 950～1100 DEG C.
9. monitoring ion implanter stability as claimed in claim 7 and the method for uniformity, it is characterised in that the time of described quick thermal treatment process is 20～40s.
10. monitoring ion implanter stability as claimed in claim 7 and the method for uniformity, it is characterised in that described quick thermal treatment process uses N2As protective gas.
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| CN111103460B (en) * | 2018-10-25 | 2021-03-16 | 株洲中车时代半导体有限公司 | Method for improving accuracy of four-probe RS test |
| CN111106040B (en) * | 2019-12-06 | 2022-06-10 | 福建省福联集成电路有限公司 | Equipment for accurately controlling metal sinking |
| CN117059509B (en) * | 2023-10-11 | 2024-02-06 | 粤芯半导体技术股份有限公司 | Method for improving ion implantation monitoring stability |
| CN117233568B (en) * | 2023-11-10 | 2024-02-13 | 青禾晶元(天津)半导体材料有限公司 | Method and device for calculating carrier mobility |
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