CN103094143A - Ion implantation monitoring method - Google Patents
Ion implantation monitoring method Download PDFInfo
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- CN103094143A CN103094143A CN201110347322XA CN201110347322A CN103094143A CN 103094143 A CN103094143 A CN 103094143A CN 201110347322X A CN201110347322X A CN 201110347322XA CN 201110347322 A CN201110347322 A CN 201110347322A CN 103094143 A CN103094143 A CN 103094143A
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Abstract
The invention provides an ion implantation monitoring method which includes that a thermal wave is adopted to measure the surface of a wafer so as to obtain hot wave value, and according to the relation between pre-determined hot wave value and resistance of the wafer after annealing, the resistance of the wafer is confirmed so as to monitor ion implantation of the wafer. According to the ion implantation monitoring method, monitoring time can be monitored.
Description
Technical field
The present invention relates to the semiconductor ion implantation technology, particularly, relate to the monitoring to substrate ion implantation doping dosage.
Background technology
It is very ripe that the method for manufacturing metallide semiconductor (MOS) device develops.In manufacture craft, can be with P type or N-type impurity doped silicon substrate.In ion implantation technology, thereby the supervision Implantation guarantees that the amount of ions of correct number is injected in silicon substrate, and is extremely important.
To the monitoring of Implantation, conventional technology is that the mode of annealing is measured the monitoring wafer, and after annealing by measurement, the resistance of wafer is reached.But in some cases, rapid thermal annealing can't be determined the injection situation, for example in the situation that inject the interruption operation record and can't determine.
Summary of the invention
In view of this, the invention provides a kind of Implantation monitoring method, effectively to address the above problem.
Implantation monitoring method of the present invention, thus it comprises that measuring crystal column surface with heat wave obtains the heat wave value; And according to the relation of resistance after the annealing of predetermined heat wave value and wafer, thereby determine the Implantation of the resistance monitoring wafer of wafer.
Implantation monitoring method of the present invention, preferably, after the annealing of described predetermined heat wave value and wafer, the relation of resistance is by wafer being carried out annealing in process and obtaining a plurality of resistance values of corresponding a plurality of deviations under same injection condition; This wafer is carried out heat wave process, to obtain the heat wave value of the corresponding described a plurality of deviations under described same injection condition; And obtain relation between described heat wave value and described resistance value.
Implantation monitoring method of the present invention, preferably, linear between described heat wave value and described resistance value.Preferably, described wafer is the monitoring wafer.
Implantation monitoring method of the present invention, owing to knowing resistance and heat wave value relation, thereby can process wafer by heat wave, thereby directly obtain wafer resistance by the heat wave value, and then know the Implantation situation, make annealing in process to avoid, improved the monitoring mechanism that injects production line, saved the testing time.
Description of drawings
Fig. 1 is the schematic flow sheet according to Implantation monitoring method of the present invention; And
Fig. 2 is the heat wave value drawn according to table 1 and the graph of a relation of resistance value.
Embodiment
Further illustrate the present invention below in conjunction with accompanying drawing.It will be appreciated by those skilled in the art that, below just in conjunction with concrete execution mode, purport of the present invention is described, do not limit enforcement of the present invention at this point.The scope that the present invention advocates is definite by appended claim, and any modification, change that does not break away from spirit of the present invention all should be contained by claim of the present invention.
Fig. 1 is the flow process signal of the method for the invention.As shown in the figure, at processing step 100, some monitoring wafers are carried out annealing in process, and obtain under identical injection condition, a plurality of resistance values of corresponding a plurality of deviations.Term " identical injection condition " refers to the controlled condition of Implantation identical, such as the parameters such as implantation dosage, energy and implant angle are identical; Term " deviation " refers to the inconsistent temperature that annealing is done of annealing temperature and draws partially.To above-mentioned some monitoring wafers, after annealing, it is carried out heat wave process, to obtain each heat wave value at a plurality of deviations place in corresponding step 100 respectively, as shown in step 102.In step 104, by result acquisition resistance value measured in step 100 and step 102 and the corresponding relation between the heat wave value.
Table 1 has provided the monitoring wafer under same injection condition, three resistance values at three different deviations places, and corresponding three heat wave values.Particularly: under the injection condition of P-QC, at the deviation place of 740RT20, after annealing, resistance is 830.2 ohm, and the uniformity of Implantation is 0.927, and this is 322.0085 for the heat wave value, and uniformity is 1.74; Under the injection condition of P-QC, at the deviation place of 750RT20, after annealing, resistance is 816.7 ohm, and the uniformity of Implantation is 1.09, and this is 320.8411 for the heat wave value, and uniformity is 1.68; Under the injection condition of P-QC, at the deviation place of 760RT20, after annealing, resistance is 800.3 ohm, and the uniformity of Implantation is 1.11, and this is 319.4681 for the heat wave value, and uniformity is 1.72.As is known to the person skilled in the art, P-QC represents the daily quality control menu of ion implantation device; And in 7,40R,T20 740 representation temperatures be 740,20 expressions be annealing time, in 750RT20 and 760RT20 part, the implication of each data is similar.
Table 1
Fig. 2 is the heat wave value drawn according to upper table and the graph of a relation of resistance value.
Continuation in step 106, is measured monitoring crystal column surface by the heat wave mode with reference to Fig. 1, obtains the heat wave value, and then determines corresponding resistance value.Be noted that first step 100-104 is necessary for definite heat wave value and sensitivity, but for monitoring the Implantation of wafer, not necessarily necessary.In other words, in the situation that known heat wave value and sensitivity, following steps can be used for the monitoring wafer under any identical injection condition.After this step obtains the heat wave value, according to the heat wave value of step 100 to 104 acquisition and the relation of resistance value, and then can obtain the corresponding resistance value of this heat wave, further, can monitor the situation of Implantation by this resistance.
Table 2 has provided the test case of 7 monitoring wafers.1# is under the injection condition of P-QC to 5# monitoring wafer, the annealed measurement of carrying out afterwards, and 6# is directly to monitor wafer with the heat wave measurement to inject in unannealed situation to 7# monitoring wafer.Can find out, in unannealed situation, the uniformity of wafer is better.
Because this method is to monitor Implantation by the heat wave measurement, just make the just product in confused situation of the injection in processing procedure, determine its injection in the situation that can't carry out annealing in process, judge the injection situation by measuring heat wave.This has not only saved the time in processing procedure, has also saved the energy, has improved efficient.
Claims (4)
1. an Implantation monitoring method, is characterized in that, described method comprises:
Thereby measure crystal column surface with heat wave and obtain the heat wave value; And
According to the relation of resistance after the annealing of predetermined heat wave value and wafer, thereby determine the Implantation of the resistance monitoring wafer of wafer.
2. Implantation monitoring method according to claim 1, is characterized in that, after described predetermined heat wave value and wafer annealing, the relation of resistance is determined by following steps:
Wafer is carried out annealing in process and obtains a plurality of resistance values of corresponding a plurality of deviations under same injection condition;
This wafer is carried out heat wave process, to obtain the heat wave value of the corresponding described a plurality of deviations under described same injection condition;
Obtain the relation between described heat wave value and described resistance value.
3. Implantation monitoring method according to claim 1 and 2, is characterized in that, and is linear between described heat wave value and described resistance value.
4. Implantation monitoring method according to claim 3, is characterized in that, described wafer is the monitoring wafer.
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| CN201110347322.XA CN103094143B (en) | 2011-10-28 | 2011-10-28 | ion implantation monitoring method |
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| CN201110347322.XA CN103094143B (en) | 2011-10-28 | 2011-10-28 | ion implantation monitoring method |
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| CN103094143B CN103094143B (en) | 2015-12-09 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646892A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A method for monitoring an ion implantation angle |
| CN104681460A (en) * | 2013-11-28 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Testing method and testing structure for ion injection and semiconductor device |
| CN104913805A (en) * | 2014-03-11 | 2015-09-16 | 上海华虹宏力半导体制造有限公司 | Method for improving daily inspection stability of ion implanter |
| CN108054118A (en) * | 2017-11-30 | 2018-05-18 | 上海华虹宏力半导体制造有限公司 | The monitoring method of ion implantation apparatus beam homogeneity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050134857A1 (en) * | 2003-12-22 | 2005-06-23 | Chartered Semiconductor Manufacturing Ltd. | Method to monitor silicide formation on product wafers |
| CN101383269A (en) * | 2008-08-28 | 2009-03-11 | 北大方正集团有限公司 | Recycling method of monitoring tablet |
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2011
- 2011-10-28 CN CN201110347322.XA patent/CN103094143B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050134857A1 (en) * | 2003-12-22 | 2005-06-23 | Chartered Semiconductor Manufacturing Ltd. | Method to monitor silicide formation on product wafers |
| CN101383269A (en) * | 2008-08-28 | 2009-03-11 | 北大方正集团有限公司 | Recycling method of monitoring tablet |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681460A (en) * | 2013-11-28 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | Testing method and testing structure for ion injection and semiconductor device |
| CN104681460B (en) * | 2013-11-28 | 2017-11-10 | 中芯国际集成电路制造(上海)有限公司 | A kind of ion injection test method, test structure and semiconductor devices |
| CN103646892A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A method for monitoring an ion implantation angle |
| CN103646892B (en) * | 2013-11-29 | 2016-11-16 | 上海华力微电子有限公司 | Ion implantation angle monitoring method |
| CN104913805A (en) * | 2014-03-11 | 2015-09-16 | 上海华虹宏力半导体制造有限公司 | Method for improving daily inspection stability of ion implanter |
| CN108054118A (en) * | 2017-11-30 | 2018-05-18 | 上海华虹宏力半导体制造有限公司 | The monitoring method of ion implantation apparatus beam homogeneity |
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