CN103094143B - ion implantation monitoring method - Google Patents
ion implantation monitoring method Download PDFInfo
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- CN103094143B CN103094143B CN201110347322.XA CN201110347322A CN103094143B CN 103094143 B CN103094143 B CN 103094143B CN 201110347322 A CN201110347322 A CN 201110347322A CN 103094143 B CN103094143 B CN 103094143B
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Abstract
The invention provides a kind of ion implantation monitoring method, the method comprises measures crystal column surface thus acquisition heat wave value with heat wave; And the relation of resistance after annealing according to predetermined heat wave value and wafer, determine the resistance of wafer thus the ion implantation of monitoring wafer.According to the method for the invention, monitoring time can be saved.
Description
Technical field
The present invention relates to semiconductor ion injection technology, particularly, relate to the monitoring to substrate ion dopant implant dosage.
Background technology
Manufacture the very ripe of the method development of metallide semiconductor (MOS) device.In manufacture craft, can with P type or N-type impurity doped silicon substrate.In ion implantation technology, monitor ion implantation thus guarantee that the amount of ions of correct number is injected in silicon substrate, extremely important.
To the monitoring of ion implantation, conventional technology is that the mode of annealing is measured monitoring wafer, is reached by the resistance measuring the rear wafer of annealing.But in some cases, rapid thermal annealing cannot determine injection situation, such as, when injecting interruption operation record and cannot determining.
Summary of the invention
In view of this, the invention provides a kind of ion implantation monitoring method, effectively to solve the problem.
Ion implantation monitoring method of the present invention, it comprises measures crystal column surface thus acquisition heat wave value with heat wave; And the relation of resistance after annealing according to predetermined heat wave value and wafer, determine the resistance of wafer thus the ion implantation of monitoring wafer.
Ion implantation monitoring method of the present invention, preferably, described predetermined heat wave value and wafer anneal after the relation of resistance be by carrying out annealing in process to wafer and multiple resistance values of corresponding multiple deviation under obtaining same injection condition; Heat wave process is carried out to this wafer, to obtain the heat wave value of the described multiple deviation of correspondence under described same injection condition; And the relation obtained between described heat wave value and described resistance value.
Ion implantation monitoring method of the present invention, preferably, linear between described heat wave value and described resistance value.Preferably, described wafer is monitoring wafer.
Ion implantation monitoring method of the present invention, owing to knowing resistance and heat wave value relation, thus can by heat wave process wafer, thus directly obtain wafer resistance by heat wave value, and then know ion implantation situation, annealing in process can be avoided, improve the monitoring mechanism injecting production line, saved the testing time.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet according to ion implantation monitoring method of the present invention; And
Fig. 2 is the graph of a relation of heat wave value and the resistance value drawn according to table 1.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.It will be appreciated by those skilled in the art that, just in conjunction with concrete execution mode, purport of the present invention is described below, do not limit enforcement of the present invention at this point.The scope that the present invention advocates is determined by appended claim, any do not depart from spirit of the present invention amendment, change and all should be contained by claim of the present invention.
Fig. 1 is the flow process signal of the method for the invention.As shown in the figure, at processing step 100, annealing in process is carried out to some monitoring wafers, and under obtaining identical injection condition, multiple resistance values of corresponding multiple deviation.Term " identical injection condition " refers to the controlled condition of ion implantation identical, and the parameters such as such as implantation dosage, energy and implant angle are identical; Term " deviation " refers to that annealing temperature is inconsistent draws the temperature done of annealing partially.To above-mentioned some monitoring wafers, after anneal, heat wave process is carried out to it, to obtain each heat wave value at the multiple deviation places in the corresponding step 100 of difference, as shown at step 1 02.In step 104, obtain the corresponding relation between resistance value and heat wave value by result measured in step 100 and step 102.
Table 1 gives monitoring wafer under same injection condition, three resistance values at three different deviation places, and corresponding three heat wave values.Specifically: under the injection condition of P-QC, at the deviation place of 740RT20, after annealing, resistance is 830.2 ohm, and the uniformity of ion implantation is 0.927, heat wave value this be 322.0085, uniformity is 1.74; Under the injection condition of P-QC, at the deviation place of 750RT20, after annealing, resistance is 816.7 ohm, and the uniformity of ion implantation is 1.09, heat wave value this be 320.8411, uniformity is 1.68; Under the injection condition of P-QC, at the deviation place of 760RT20, after annealing, resistance is 800.3 ohm, and the uniformity of ion implantation is 1.11, heat wave value this be 319.4681, uniformity is 1.72.As is known to the person skilled in the art, P-QC represents the daily quality control menu of ion implantation device; And in 7,40R,T20 740 representation temperatures be 740,20 represent be annealing time, in 750RT20 and 760RT20 part, the implication of each data is similar.
Table 1
Fig. 2 is the graph of a relation of heat wave value and the resistance value drawn according to upper table.
Continue, with reference to Fig. 1, in step 106, to measure monitoring crystal column surface by heat wave mode, obtain heat wave value, and then determine corresponding resistance value.First be noted that step 100-104 is for determining that heat wave value and sensitivity are necessary, but the ion implantation for monitoring wafer, then not necessarily necessary.In other words, when known heat wave value and sensitivity, following steps may be used for the monitoring wafer under any identical injection condition.After this step obtains heat wave value, the heat wave value obtained according to step 100 to 104 and the relation of resistance value, and then the resistance value corresponding to this heat wave can be obtained, further, the situation of ion implantation can be monitored by this resistance.
Table 2 gives the test case of 7 monitoring wafers.It is under the injection condition of P-QC that 1# to 5# monitors wafer, the measurement carried out after annealed, and 6# to 7# monitoring wafer is that direct heat wave carries out measurement to monitor wafer injection in unannealed situation.Can find out, in unannealed situation, the uniformity of wafer is better.
Because this method monitors ion implantation by heat wave measurement, just making the product that the injection just in processing procedure is in confused situation, when cannot annealing in process be carried out to determine that it injects, judging injection situation by measuring heat wave.This has not only saved the time in processing procedure, also a saving the energy, improves efficiency.
Claims (3)
1. an ion implantation monitoring method, is characterized in that, described method comprises:
Measure crystal column surface with heat wave thus obtain heat wave value; And
The relation of resistance after annealing according to predetermined heat wave value and wafer, determines the resistance of wafer thus the ion implantation of monitoring wafer;
Wherein, described predetermined heat wave value and wafer anneal after the relation of resistance determined by following steps:
Carry out annealing in process to wafer and correspond respectively to each resistance value at each deviation place under obtaining same injection condition, wherein, described deviation refers to that annealing temperature is inconsistent draws partially to the temperature done of annealing;
Heat wave process is carried out to this wafer, to obtain each heat wave value at the described each deviation place of correspondence under described same injection condition;
Obtain the relation between described heat wave value and described resistance value.
2. ion implantation monitoring method according to claim 1, is characterized in that, linear between described heat wave value and described resistance value.
3. ion implantation monitoring method according to claim 1, is characterized in that, described wafer is monitoring wafer.
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| CN201110347322.XA CN103094143B (en) | 2011-10-28 | 2011-10-28 | ion implantation monitoring method |
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| CN201110347322.XA CN103094143B (en) | 2011-10-28 | 2011-10-28 | ion implantation monitoring method |
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| CN103094143B true CN103094143B (en) | 2015-12-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104681460B (en) * | 2013-11-28 | 2017-11-10 | 中芯国际集成电路制造(上海)有限公司 | A kind of ion injection test method, test structure and semiconductor devices |
| CN103646892B (en) * | 2013-11-29 | 2016-11-16 | 上海华力微电子有限公司 | Ion implantation angle monitoring method |
| CN104913805A (en) * | 2014-03-11 | 2015-09-16 | 上海华虹宏力半导体制造有限公司 | Method for improving daily inspection stability of ion implanter |
| CN108054118A (en) * | 2017-11-30 | 2018-05-18 | 上海华虹宏力半导体制造有限公司 | The monitoring method of ion implantation apparatus beam homogeneity |
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| CN101383269A (en) * | 2008-08-28 | 2009-03-11 | 北大方正集团有限公司 | Recycling method of monitoring tablet |
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| US20050134857A1 (en) * | 2003-12-22 | 2005-06-23 | Chartered Semiconductor Manufacturing Ltd. | Method to monitor silicide formation on product wafers |
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