CN103904009A - Method for monitoring stability and uniformity of ion implanter - Google Patents
Method for monitoring stability and uniformity of ion implanter Download PDFInfo
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- CN103904009A CN103904009A CN201410161246.7A CN201410161246A CN103904009A CN 103904009 A CN103904009 A CN 103904009A CN 201410161246 A CN201410161246 A CN 201410161246A CN 103904009 A CN103904009 A CN 103904009A
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Abstract
The invention discloses a method for monitoring the stability and the uniformity of an ion implanter. The method includes the steps that firstly a germanium amorphous barrier layer is formed on the surface of a sample wafer substrate to be measured so as to reduce the ion implantation depth, in the monitored ion implanter, of subsequent wafers, high temperature annealing is conducted so as to form doped silicon germanium alloy with good conductivity on the surfaces of the wafers, therefore, common probes of a four-probe tester can be directly used for measuring RS accurately, and the effect that the stability and the uniformity of the ion implanter are monitored accurately is achieved. Due to the application of the method, the measuring cost is lowered, and the service life of a measuring machine is prolonged. Meanwhile, according to the method, the accuracy and the stability of RS measurement are effectively improved, the downtime risk caused by misjudgment is greatly reduced, and the productivity of the ion implanter is improved.
Description
Technical field
The present invention relates to the method for the monitoring ion implanter performance in a kind of semiconductor manufacture, more specifically, thereby relate to a kind of method that can accurately measure wafer square resistance by reducing the Implantation degree of depth, be used for stability and the uniformity of monitoring ion implanter.
Background technology
The feature dimensions that the development need of highly integrated circuit is less and nearer circuit devcie spacing.And thermal diffusion limits to some extent to the production of advanced circuit.Its limited part be horizontal proliferation, super shallow junction, doping control, the interference of surface contamination and the generation of dislocation of poor quality.
Ion implantation technique has overcome the above-mentioned restriction of diffusion, and extra advantage is also provided simultaneously.In ion implantation process, there is no sideways diffusion, technique is carried out approaching under room temperature, and foreign atom is placed in below crystal column surface, makes the doping of wide range of concentrations become possibility simultaneously.There is Implantation, can be better controlled the position of adulterating in wafer and quantity.Therefore, ion implantation technique occupies an important position in semiconductor fabrication.Diffusion is a chemical process, and Implantation is a physical process.Ion implantation technology adopts gaseous state and solid-state impurity source material.In ion implantation process, foreign atom, by ionization, separation, acceleration (obtaining kinetic energy), forms ion beam current, inswept wafer.Foreign atom carries out physical bombardment to wafer, enters crystal column surface and stops below surface.
Ion implantor is the equipment for ion implantation technology, is subsystem integrated of multiple very complex precises.Conventional Implantation can comprise that middle current ion is injected, high current ion is injected and energetic ion injects.In ion implantation technology, atomic quantity (implantation dosage) is to be decided by ion beam current density (amount of ions in every sq) and injection length.Can strictly control dosage by measuring ionic current.In the process of Implantation, due to the collision of incident ion, wafer crystal structure can sustain damage.Repairing lens lesion can realize by the heating anneal to wafer.
Wafer variations after Implantation may be from many factors: the uniformity of the line that ion implantor produces, variation, the variation of scanning and the problem of mechanical system of voltage.These potential problems likely cause the variation of the square resistance larger than diffusion technology.
Along with the development of semiconductor fabrication, the technology stability to ion implantor and uniformity have had higher requirement.The stability of monitoring ion implanter and uniformity effectively, reflects the situation of ion implantor, exactly to keeping the stability of existing semiconductor fabrication process and significant to the research and development of new technology.
The appraisal procedure of the stability to Implantation wafer and these processing qualities of uniformity, a kind of method is to adopt heat wave survey meter (TW) to detect the surface damage that injects rear wafer.But this detection means can only characterize the situation of crystal column surface, cannot monitor being injected into inner ion situation, thereby there is certain limitation.
Another conventional method for supervising is that the wafer after Implantation is being carried out after high annealing, adopts four point probe tester to measure the square resistance (RS) of wafer ion implanted layer.The square resistance of ion implanted layer is an important electrical parameter of semi-conducting material, and it is defined as surface for foursquare semiconductor lamella, the resistance presenting at the sense of current that is parallel to square limit.In the time that ion implantation dosage is not enough, square resistance is higher; Otherwise square resistance is lower when dosage is excessive.
For energetic ion implanter and ion implantor more than middle electric current, because its Implantation Energy is higher, foreign atom can be injected into the position darker from crystal column surface, lower in the concentration of annealing rear surface foreign atom, causes its conductivity to be easily affected.In this case, if use four point probe tester common probe to measure, the phenomenon of the RS of wafer will occur accurately to measure, what cause the RS to measure is insensitive.Current solution is to adopt the sharper a kind of probe of gauge head, substitutes common probe and measures the RS that accepts high energy and the above Implantation wafer of middle electric current.The relatively common probe of probe that this gauge head is sharper, expensive and useful life is shorter, be only about two months.In increasing measurement cost, also can cause the increase of measurement platform frequency of maintenance.And, while using the sharper probe of this gauge head, also be easy to because the job insecurity of the ion implantor being measured, or the measurement unstable properties causing because of the later stage in useful life in this probe, and cause wafer measurement to exceed specification, cause erroneous judgement to ion implantor state and the machine of delaying.This normal operation to ion implantor has caused interference, and has further affected the production capacity of board.How more accurately the stability of monitoring ion implanter and uniformity, improve life-span of measurement platform, avoids causing the machine of delaying to affect the generation of production capacity phenomenon because measuring inaccurate problem, is our problem anxious to be resolved.
Summary of the invention
The object of the invention is to overcome the above-mentioned defect that prior art exists, a kind of new monitoring ion implanter stability and inhomogeneity method are provided, by first forming the decrystallized barrier layer of germanium on sample to be tested wafer substrate surface, to reduce the Implantation degree of depth of wafer in monitored ion implantor subsequently, again through high annealing to form and to there is the doped silicon germanium alloy of excellent conductive performance at crystal column surface, thereby can directly adopt the common probe of four point probe tester accurately to measure RS, realize stability and the uniformity of accurate monitoring ion implanter.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of monitoring ion implanter stability and inhomogeneity method, comprise the following steps:
Step 1: carry out Ge+ implantation in sample to be tested wafer substrate, to form the decrystallized barrier layer of germanium at described crystal column surface;
Step 2: the wafer with the decrystallized barrier layer of germanium obtaining in step 1 is put into the ion implantor that needs monitoring, carried out conventional ion implantation technology, the decrystallized barrier layer of germanium that utilizes described wafer to form, the injection degree of depth of reduction ion;
Step 3: the wafer having injected in step 2 is carried out to high annealing, to form the sige alloy of doping at described crystal column surface;
Step 4: the described wafer of the sige alloy to the formation doping obtaining in step 3, utilize its excellent conductive performance having, adopt four point probe tester to measure the square resistance of described wafer implanted layer;
Step 5: according to the measuring value result of square resistance, stability and uniformity to ion implantor judge, thereby the monitoring management of the ion implantor of realization to needs monitoring.
For the normal Implantation of same dose, middle and high-energy is injected owing to injecting too dark, foreign atom can be injected into the position darker from crystal column surface, concentration at annealing rear surface foreign atom is lower, cause its conductivity to be easily affected, and then cause while using the common detecting head of four point probe tester to measure, can there is accurately to measure the phenomenon of the RS of wafer, what cause the RS to measure is insensitive; And while using the sharper probe of gauge head, also be easy to because the job insecurity of the ion implantor being measured, or the measurement unstable properties causing because of the later stage in useful life in this probe, and cause wafer measurement to exceed specification, cause erroneous judgement to ion implantor state and the machine of delaying.The decrystallized barrier layer of germanium can reduce the degree of depth of Implantation, and it stops that mechanism is the impact that can effectively reduce channeling effect due to decrystallized barrier layer.Therefore, by forming the decrystallized barrier layer of germanium, can stop foreign atom to be injected into the position darker from crystal column surface, avoid the lower phenomenon of surface doping atomic concentration producing after annealing, effectively prevent that its conductivity is affected, thereby can utilize the good electric conductivity of doped silicon germanium alloy of formation, adopted the common detecting head of four point probe tester, just can accurately measure the RS of wafer implanted layer, realize stability and the uniformity of accurate monitoring ion implanter.
Further, in step 1, adopt with the Implantation standard board of the ion implantor homotype that needs monitoring and carry out Ge+ implantation, to ensure higher comparativity and the consistency of standard.
Further, in step 1, described Ge+ implantation adopts conventional Ge+ implantation technique.
Further, in step 1, energy when described Ge+ implantation is 10～50keV.
Further, in step 1, dosage when described Ge+ implantation is 1E15～5E15atom/cm
2.
Further, in step 1, the thickness on the decrystallized barrier layer of germanium that described crystal column surface forms is 20nm～200nm.
The technological parameter of above-mentioned Ge+ implantation can need to specifically be determined according to different process and monitoring.
Further, in step 3, adopt quick thermal treatment process to carry out high annealing to the wafer having injected in step 2.
Further, the temperature of described quick thermal treatment process is 950～1100 DEG C.
Further, the time of described quick thermal treatment process is 20～40s.
Above-mentioned process of thermal treatment parameter can need to specifically be determined according to different process and monitoring.
Further, described quick thermal treatment process adopts N
2or other inert gases are as protective gas.
Can find out from technique scheme, the present invention is by first forming the decrystallized barrier layer of germanium on sample to be tested wafer substrate surface, to reduce the Implantation degree of depth of wafer in monitored ion implantor subsequently, again through high annealing to form and to there is the doped silicon germanium alloy of excellent conductive performance at crystal column surface, thereby can directly adopt the common probe of four point probe tester accurately to measure RS, realize stability and the uniformity of accurate monitoring ion implanter.Therefore, use of the present invention has reduced the cost measuring, and has extended the useful life of measurement platform; Meanwhile, method of the present invention has improved the Stability and veracity that RS measures effectively, and accurately monitoring ion injects stability and the uniformity of board, and has greatly reduced the machine of the delaying risk causing because of erroneous judgement, has improved the production capacity of ion injection machine table.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the present invention's a kind of monitoring ion implanter stability and inhomogeneity method;
Fig. 2 is the schematic diagram that while adopting method of the present invention, wafer forms the decrystallized barrier layer of germanium;
Fig. 3 is the schematic diagram that the wafer to forming the decrystallized barrier layer of germanium in Fig. 2 is proceeded Implantation.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
In the present embodiment, refer to Fig. 1, Fig. 1 is the schematic flow sheet of the present invention's a kind of monitoring ion implanter stability and inhomogeneity method.As shown in the figure, monitoring ion implanter stability of the present invention and inhomogeneity method, comprise following process step:
First, provide a sample to be tested wafer substrate;
Secondly, adopt and the Implantation standard board that needs the ion implantor homotype of monitoring, to ensure higher comparativity and the consistency of standard, in sample to be tested wafer substrate, adopt conventional Ge+ implantation technique to carry out Ge+ implantation, to form the decrystallized barrier layer of germanium at described crystal column surface; Energy when described Ge+ implantation is 10～50keV, and dosage is 1E15～5E15atom/cm
2, and form at described crystal column surface the decrystallized barrier layer of germanium that thickness is 20nm～200nm; These technological parameters can, according to different process and monitoring needs, operate specifically and determine Implantation standard board, and control and realize process results;
Then, the wafer with the decrystallized barrier layer of germanium obtaining is put into the ion implantor that needs monitoring, carried out conventional ion implantation technology, the decrystallized barrier layer of germanium that utilizes described wafer to form, the injection degree of depth of reduction ion;
Then the wafer, aforementioned injection being completed is at N
2or to carry out temperature in the rapid thermal treatment of other inert gas atmospheres (RTP) equipment be the high annealing that 950～1100 DEG C, time are 20～40s, to form the sige alloy of doping at described crystal column surface; Process of thermal treatment parameter can need to specifically be determined according to different process and monitoring;
Afterwards, the described wafer of the sige alloy to the formation doping obtaining, utilizes its excellent conductive performance having, and adopts four point probe tester to measure the square resistance of described wafer implanted layer; Can use common detecting head accurately to measure;
Finally, the measuring value result of square resistance is contrasted with controlling specification, and decision making, the stability to ion implantor and uniformity judge accordingly, whether stablely can characterize board by the mean value of square resistance and deviation; In the time that the measuring value of square resistance is being controlled in specification limit, judge and measure normally, as the qualified foundation of monitoring; Control when specification if the measuring value of square resistance exceeds, need analyze to the ill reason and deal with problems, then implementing monitoring process again.
The present invention is by above-mentioned monitoring process step, thereby realized the ion implantor monitoring management accurately to needs monitoring.
In the method for the invention, utilized the decrystallized barrier layer of germanium can reduce the characteristic of the Implantation degree of depth, it stops that mechanism can illustrate by Fig. 2 and Fig. 3.
Refer to Fig. 2, Fig. 2 is the schematic diagram that while adopting method of the present invention, wafer forms the decrystallized barrier layer of germanium.As shown in the figure, while adopting conventional Ge+ implantation technique to carry out Ge+ implantation, can form the decrystallized barrier layer 2 of germanium that a desired thickness is 20nm～200nm at described crystal column surface on sample to be tested wafer 1.
For the normal Implantation of same dose, middle and high-energy is injected owing to injecting too dark, foreign atom can be injected into the position darker from crystal column surface, concentration at annealing rear surface foreign atom is lower, cause its conductivity to be easily affected, and then cause while using the common detecting head of four point probe tester to measure, can there is accurately to measure the phenomenon of the RS of wafer, what cause the RS to measure is insensitive; And while using the sharper probe of gauge head, also be easy to because the job insecurity of the ion implantor being measured, or the measurement unstable properties causing because of the later stage in useful life in this probe, and cause wafer measurement to exceed specification, cause erroneous judgement to ion implantor state and the machine of delaying.
Please continue to refer to Fig. 3, Fig. 3 is the schematic diagram that the wafer to forming the decrystallized barrier layer of germanium in Fig. 2 is proceeded Implantation.As shown in the figure, the wafer 1 with the decrystallized barrier layer 2 of germanium obtaining is put into the ion implantor that needs monitoring in Fig. 2, carried out conventional ion implantation technology.As arrow indication position in figure, on wafer 1, the visible decrystallized barrier layer 2 of germanium forming has stopped that ion continues the injection to deep layer, thereby has reduced the injection degree of depth of ion.
The decrystallized barrier layer of germanium can reduce the degree of depth of Implantation, and it stops that mechanism is the impact that can effectively reduce channeling effect due to decrystallized barrier layer.Therefore, by forming the decrystallized barrier layer of germanium, can stop foreign atom to be injected into the position darker from crystal column surface, avoid the lower phenomenon of surface doping atomic concentration producing after annealing, effectively prevent that its conductivity is affected, thereby can utilize the good electric conductivity of doped silicon germanium alloy of formation, adopted the common detecting head of four point probe tester, just can accurately measure the RS of wafer implanted layer, realize stability and the uniformity of accurate monitoring ion implanter.
Below by instantiation, further set forth the remarkable result that the present invention produces.
Be that 1200keV, dosage are 1E14atom/cm a sample wafer substrate normally being carried out to energy
2p+ while injecting, through after 950 DEG C, the RTP of 20s annealing, unstable with common probe measurement RS, use the sharper probe of gauge head that approaches useful life instead and measure RS value for 926ohm/sq, exceed specification limit, illustrate that board is abnormal, need to confirm board state.Being increased to conventional Ge+ implantation technique, another sample wafer substrate carries out Ge+ implantation, form behind the decrystallized barrier layer of 100nm germanium, after adopting again same process parameter, inject in identical board and annealing, measuring RS value with common probe is 551ohm/sq, meet corresponding judgement specification requirement, judge accordingly that this monitored ion injection machine table is normal, thereby avoided an erroneous judgement to ion implantor state and the accident of the machine of delaying.
It should be noted that, in the time that employing is of the present invention, can not use the RS of existing original technique to judge specification, the sample wafer increasing behind the decrystallized barrier layer of germanium is carried out to RS measurement, and need to be according to data accumulation, reformulate corresponding RS and judge specification.And, general, should be noted for homotype board, RS judges that the scope of specification is consistent; And for different shaped board, its RS judges that the scope of specification is difference to some extent, to prevent misunderstanding of the present invention and improper utilization.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. monitoring ion implanter stability and an inhomogeneity method, is characterized in that, comprises the following steps:
Step 1: carry out Ge+ implantation in sample to be tested wafer substrate, to form the decrystallized barrier layer of germanium at described crystal column surface;
Step 2: the wafer with the decrystallized barrier layer of germanium obtaining in step 1 is put into the ion implantor that needs monitoring, carried out conventional ion implantation technology, the decrystallized barrier layer of germanium that utilizes described wafer to form, the injection degree of depth of reduction ion;
Step 3: the wafer having injected in step 2 is carried out to high annealing, to form the sige alloy of doping at described crystal column surface;
Step 4: the described wafer of the sige alloy to the formation doping obtaining in step 3, utilize its excellent conductive performance having, adopt four point probe tester to measure the square resistance of described wafer implanted layer;
Step 5: according to the measuring value result of square resistance, stability and uniformity to ion implantor judge, thereby the monitoring management of the ion implantor of realization to needs monitoring.
2. monitoring ion implanter stability as claimed in claim 1 and inhomogeneity method, is characterized in that, in step 1, adopts with the Implantation standard board of the ion implantor homotype that needs monitoring and carry out Ge+ implantation.
3. monitoring ion implanter stability as claimed in claim 1 and inhomogeneity method, is characterized in that, in step 1, described Ge+ implantation adopts conventional Ge+ implantation technique.
4. monitoring ion implanter stability and the inhomogeneity method as described in claim 1,2 or 3, is characterized in that, in step 1, energy when described Ge+ implantation is 10～50keV.
5. monitoring ion implanter stability and the inhomogeneity method as described in claim 1,2 or 3, is characterized in that, in step 1, dosage when described Ge+ implantation is 1E15～5E15atom/cm
2.
6. monitoring ion implanter stability as claimed in claim 1 and inhomogeneity method, is characterized in that, in step 1, the thickness on the decrystallized barrier layer of germanium that described crystal column surface forms is 20nm～200nm.
7. monitoring ion implanter stability as claimed in claim 1 and inhomogeneity method, is characterized in that, in step 3, adopts quick thermal treatment process to carry out high annealing to the wafer having injected in step 2.
8. monitoring ion implanter stability as claimed in claim 7 and inhomogeneity method, is characterized in that, the temperature of described quick thermal treatment process is 950～1100 DEG C.
9. monitoring ion implanter stability as claimed in claim 7 and inhomogeneity method, is characterized in that, the time of described quick thermal treatment process is 20～40s.
10. monitoring ion implanter stability as claimed in claim 7 and inhomogeneity method, is characterized in that, described quick thermal treatment process adopts N
2as protective gas.
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Cited By (4)
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| CN111103460A (en) * | 2018-10-25 | 2020-05-05 | 株洲中车时代电气股份有限公司 | Method for improving accuracy of four-probe RS test |
| CN111106040A (en) * | 2019-12-06 | 2020-05-05 | 福建省福联集成电路有限公司 | Equipment for accurately controlling metal sinking |
| CN117059509A (en) * | 2023-10-11 | 2023-11-14 | 粤芯半导体技术股份有限公司 | Method for improving ion implantation monitoring stability |
| CN117233568A (en) * | 2023-11-10 | 2023-12-15 | 青禾晶元(天津)半导体材料有限公司 | Method and device for calculating carrier mobility |
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