CN105097584A - Detection method for ion implantation dosage - Google Patents
Detection method for ion implantation dosage Download PDFInfo
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- CN105097584A CN105097584A CN201410206113.7A CN201410206113A CN105097584A CN 105097584 A CN105097584 A CN 105097584A CN 201410206113 A CN201410206113 A CN 201410206113A CN 105097584 A CN105097584 A CN 105097584A
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Abstract
The invention provides a detection method for ion implantation dosage. The detection method for ion implantation dosage at least includes following steps: providing a bare wafer, and preparing an oxide layer and a polysilicon layer on the bare wafer; implanting ions on the surface of the polysilicon layer, and forming a doped layer; performing etching of the doped layer; and finally calculating the etching rate, and calculating the ion implantation dosage according to the etching rate. According to the detection method for ion implantation dosage, dilute ammonia water is employed to perform wet etching of the doped layer formed by ion implantation, the etching rate is obtained via the measurement of the etching thickness, a certain corresponding relation is arranged between the etching rate and the ion implantation dosage, the ion implantation dosage can be detected via the change of the etching rate, the method is advantaged by simple operation and cheap price, and destructive measurement of the detected wafer is prevented.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of detection method of ion implantation dosage.
Background technology
Ion implantation is the mode of in semiconductor manufacturing process, semi-conducting material being carried out to ion doping, can complete the injection of P trap, the injection of N trap, the injection of P+ district, N+ district injection plasma doping technique, have a very important role in semiconductor fabrication.Ion implantation has the following advantages: 1, purity is high: ion is elected by magnetic analyzer; 2, good evenness: the same plane uniformity generally can ensure ± 3%; 3, implantation dosage and the degree of depth can accurately be controlled; 4, temperature is lower, thermal defect can not occur; 5, the material such as photoresist or amorphous c film can be utilized to carry out selective area injection as mask plate.
On IC production line, based on the importance of ion implantation in semiconductor manufacturing process, the detection of ion implantation dosage is also just seemed extremely important.The detection of current ion implantation dosage roughly has following several: spreading resistance probe (SRP) method, heat wave (TW) method, ion microprobe (SIMS) method and four point probe (FPP) method.
Spreading resistance sonde method is pressed on test surfaces with the probe of two fine alignments, two probes apply voltage, and probe moves with certain step pitch, each mobile detection resistance, be carrier concentration curve by spreading resistance Curve transform, finally obtain ion implantation dosage.
Heat wave method is the light reflectivity utilizing Laser Focusing material surface to detect measured material, heat wave value can be calculated by the variable quantity of light reflectivity, implantation membership produces a large amount of lattice defects in measured material inside, there is certain corresponding relation in heat wave value and lattice defect quantity, can realize the indirect detection to ion implantation dosage.
Ion microprobe is with speeding-up ion bombardment measured material surface in magnetic field, sputter the secondary ion comprising measured material and Doped ions, utilize mass spectrometer to collect in the vacuum chamber and analyze the type of secondary ion and concentration can record ion implantation dosage.
Four probe method is the resistance utilizing the electric current between four probes and potentiometer to calculate square resistance Rs, and resistance and ion implantation are measured exists certain corresponding relation, equally can indirect detection ion implantation dosage.
Be illustrated in figure 1 in prior art the flow chart of the four probe method detecting ion implantation dosage, the step of the method is as follows: prepare bare silicon wafer 11; Again wafer preparation is carried out to described bare silicon wafer 11, be included in bare silicon wafer 11 surface deposition oxide skin(coating) 12, at oxide skin(coating) 12 surface deposition polysilicon layer 13; Then, to polysilicon layer 13 surface on upper strata carry out ion implantation formed doped layer 14, and carry out annealing in process with activate Doped ions and after repairing ion implantation to semiconductor lattice generation damage; Then, the sheet resistance formed in doped layer 14 is measured; Finally, analyze sheet resistance, if up to specification, ion implantation dosage meets the requirements, and exits detection system, if fall short of specifications, returns detection system after inspection and detects next time.
Be sectional view that the test structure 1 of four probe method detecting ion implantation dosage presents in each step as shown in Figures 2 and 3.As shown in Figure 2, the both sides up and down of bare silicon wafer 11 deposited oxide skin(coating) 12 respectively, and the surface deposition of upper and lower two-layer oxide skin(coating) 12 has polysilicon layer 13 respectively.As shown in Figure 3, inject ion in the polysilicon layer 13 on upper strata and form doped layer 14, the polysilicon layer 13 of lower floor does not process, annealing in process is carried out to doped layer 14, utilize the surface of four probes touch doped layers 14 to record electric current between four probes and electrical potential difference, the resistance obtaining square resistance further records ion implantation dosage indirectly with this, after annealing to doped layer 14 in this processing step, utilize probe measurement resistance, in test structure 1 as shown in Figure 3, the surface of doped layer 14 can form mechanical damage.
Although the detection of current ion implantation dosage is numerous, all there is certain defect.Spreading resistance probe (SRP) but the highly sensitive price comparison of method is expensive and probe can damage measured material; Heat wave (TW) method not lesioned sample is still expensive; Ion microprobe (SIMS) but the highly sensitive price comparison of method is expensive and be destructive testing; Four point probe (FPP) method is easy to operate, low price, but probe can cause damage to tested material, and sensitivity is simultaneously low.
Therefore, the how method of optimum detection ion implantation dosage, the technology improving semiconductor manufacturing is those skilled in the art's problem demanding prompt solution.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of detection method of ion implantation dosage, the detection method sensitivity for solving prior art intermediate ion implantation dosage low and test there is destructive problem.
For achieving the above object and other relevant objects, the invention provides a kind of detection method of ion implantation dosage, the detection method of described ion implantation dosage at least comprises the following steps:
Step one, provide bare silicon wafer, and form oxide skin(coating) on described bare silicon wafer surface and at described oxide layer surface deposition of polysilicon layer;
Step 2, ion implantation is carried out to described polysilicon layer, form doped layer;
Step 3, described doped layer to be etched;
Step 4, calculating etch-rate, calculate ion implantation dosage according to described etch-rate.
Preferably, described oxide skin(coating) is silicon dioxide layer.
More preferably, described silicon dioxide layer is formed by thermal oxidation process.
Preferably, in step 3, etching mode is wet etching.
More preferably, described wet etching utilizes weak aqua ammonia as etching solution.
More preferably, the concentration of described weak aqua ammonia is set as 300:1 ~ 200:1.
Preferably, the consistency of thickness of the thickness etched in step 3 and described doped layer.
Preferably, in step 4 to the calculating of etch-rate comprise measure described test structure before the etch after thickness obtain etched thickness, obtain etch-rate by the corresponding relation of etching period and etched thickness.
More preferably, utilize optical caliper measurement gauges to described test structure before the etch after thickness measure.
As mentioned above, the detection method of ion implantation dosage of the present invention, has following beneficial effect:
The detection method of ion implantation dosage of the present invention forms oxide skin(coating) and polysilicon layer on bare silicon wafer, then ion implantation is carried out to polysilicon layer and form doped layer, again with certain density weak aqua ammonia etching doped layer, by measuring the speed that etched thickness obtains etching, there is certain corresponding relation in the etch-rate of doped layer and the dosage of ion implantation, ion implantation dosage can be detected by the change of etch-rate, the method is simple to operate, low price, avoids measuring tested damaging property of wafer simultaneously.
Accompanying drawing explanation
Fig. 1 is shown as the schematic flow sheet of the four probe method of detection ion implantation dosage of the prior art.
The schematic cross-section that the test structure that Fig. 2 and Fig. 3 is shown as the four probe method of detection ion implantation dosage of the prior art presents in each step.
Fig. 4 is shown as the schematic flow sheet of the detection method of ion implantation dosage of the present invention.
The schematic cross-section that the test structure that Fig. 5 to Fig. 7 is shown as the detection method of ion implantation dosage of the present invention presents in each step.
Fig. 8 is shown as the schematic diagram of etch-rate and a kind of relation of ion implantation dosage in the detection method of ion implantation dosage of the present invention.
Element numbers explanation
1 test structure
11 bare silicon wafers
12 oxide skin(coating)s
13 polysilicon layers
14 doped layers
2 test structures
21 bare silicon wafers
22 oxide skin(coating)s
23 polysilicon layers
24 doped layers
The thickness of H doped layer
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 4 ~ Fig. 8.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Fig. 4 ~ Fig. 8, the invention provides a kind of detection method of ion implantation dosage, as shown in Figure 4, the detection method of described ion implantation dosage at least comprises the following steps:
Step one S1, provide bare silicon wafer 21, and form oxide skin(coating) 22 on described bare silicon wafer 21 surface and at described oxide skin(coating) 22 surface deposition polysilicon layer 23.
In the present embodiment, described oxide skin(coating) 22 is silicon dioxide layer.Described silicon dioxide layer is by bare silicon wafer 21 surface as described in being prepared in as the method such as chemical vapour deposition (CVD) or thermal oxidation, and in the present embodiment, described silicon dioxide layer is formed by thermal oxidation process.Described thermal oxidation process is carried out in atmospheric conditions, and the temperature of this environment is controlled between 750 DEG C ~ 1100 DEG C, and reaction rate increases with temperature and speeds, and the thickness of described silicon dioxide layer is about 400 dust ~ 1200 dusts.
Described polysilicon layer 23 can adopt the method for chemical vapour deposition (CVD) to prepare, the working temperature of chemical vapour deposition technique is controlled between 500 DEG C ~ 700 DEG C, by the surface of polysilicon ion uniform deposition to described oxide skin(coating) 22 in Pvd equipment, the thickness of described polysilicon layer is about 2000 dust ~ 3000 dusts.
As shown in Figure 5, the structure formed by wafer preparation is as follows, comprising: the bare silicon wafer 21 being positioned at intermediate layer, and two surface preparations of described bare silicon wafer 21 have oxide skin(coating) 22, and in the present embodiment, described oxide skin(coating) 22 is silicon dioxide layer.The surface deposition of oxide skin(coating) 22 has polysilicon layer 23, and described polysilicon layer 23 is the pure polysilicon not with impurity.
Step 2 S2, ion implantation is carried out to described polysilicon layer 23, form doped layer 24.
Utilize ion implantor to carry out ion implantation to described polysilicon layer 23, the ion of injection can select any one need test or meet the ion of production requirement, and can be N-type, also can be P type, and in the present embodiment, described injection ion is the BF of P type
2+.In the present embodiment, control the energy of ion implantor intermediate ion bundle, inject certain thickness ion on the top layer of described polysilicon layer 23, this ion is the BF of P type
2+.
As shown in Figure 6, control the energy of ion implantor intermediate ion bundle, injecting thickness on the top layer of described polysilicon layer 23 is the BF of H
2+, making described polysilicon layer 23 top layer form thickness is the doped layer 24 of H.
The described oxide skin(coating) 22 be prepared between described polysilicon layer 23 and described bare silicon wafer 21 can effectively be injected in described bare silicon wafer 21 by barrier ion, avoids described bare silicon wafer 21 contaminated.
Step 3 S3, described doped layer 24 to be etched.
Dry etching or wet etching can be adopted in this step, in the present embodiment, be preferably wet etching, utilize weak aqua ammonia to carry out wet etching as etching solution to described doped layer 24.
The concentration of described weak aqua ammonia is set as 300:1 ~ 200:1, different weak aqua ammonia concentration produces Different Effects to the speed of etching, corresponding relation by weak aqua ammonia concentration and etch-rate selects the weak aqua ammonia of suitable concn, and in the present embodiment, the concentration of described weak aqua ammonia is preferably 200:1.
The thickness H of the thickness and described doped layer that control etching is consistent, guarantee that comprising major part in etched thickness injects ion, if the thickness H of etched thickness and described doped layer exists larger difference, bring uncertain factor to the evaluation of etch-rate, affect the accuracy that etch-rate is evaluated, and then affect the follow-up detection to ion implantation dosage, cause testing result accuracy to be had a greatly reduced quality.
As shown in Figure 7, etch described doped layer 24, in the present embodiment, be that the weak aqua ammonia of 200:1 carries out wet etching to described doped layer 24 with concentration, etched thickness is H.
Step 4 S4, calculating etch-rate, calculate ion implantation dosage according to described etch-rate.
Measure described test structure before the etch after thickness obtain etched thickness H accurately, obtain etch-rate by the corresponding relation of etching period and etched thickness.
In the present embodiment, utilize optical caliper measurement gauges to realize the thickness measure of test structure 2, obtain etched thickness.
Corresponding etch-rate is obtained by relations such as etched thickness, etching period and etchant concentration, there is certain corresponding relation in the dosage that etch-rate and described doped layer 24 intermediate ion inject, can be detected obtain required ion implantation dosage by the conversion of corresponding relation.
In the present embodiment, weak aqua ammonia concentration may be defined as 200:1, and the ion of injection is BF
2+, target dose is set as 1E14 ~ 2E14ions/cm
2, as shown in Figure 8, when etch-rate E/R is 32.86nm/min, actual ions implantation dosage is less than target dose by 10%; When etch-rate E/R is 28.25nm/min, actual ions implantation dosage is within the scope of target dose; When etch-rate E/R is 25.3nm/min, actual ions implantation dosage larger than target dose 10%.
The detection method of ion implantation dosage of the present invention forms oxide skin(coating) 22 and polysilicon layer 23 on bare silicon wafer 21, then ion implantation is carried out to polysilicon layer 23 and form doped layer 24, described doped layer 24 is etched again with certain density weak aqua ammonia, by measuring the speed that etched thickness obtains etching, certain corresponding relation is existed to the described etch-rate of doped layer 24 and the dosage of ion implantation, can ion implantation dosage be detected by the change of etch-rate.The manufacturing process of the test structure 2 of the detection method of ion implantation dosage of the present invention is simple, and avoids measuring damaging property of survey wafer, effectively improves the performance of ion implantation dosage detection method.
In sum, the invention provides a kind of detection method of ion implantation dosage, the detection method of described ion implantation dosage at least comprises the following steps: step one, provide bare silicon wafer, and carries out wafer preparation on described bare silicon wafer; Step 2, ion implantation is carried out to the wafer prepared, form doped layer; Step 3, described doped layer to be etched; Step 4, etched thickness to be measured.The detection method of ion implantation dosage of the present invention forms oxide skin(coating) and polysilicon layer on bare silicon wafer, then ion implantation is carried out to polysilicon layer and form doped layer, again with certain density weak aqua ammonia etching doped layer, by measuring the speed that etched thickness obtains etching, there is certain corresponding relation in the etch-rate of doped layer and the dosage of ion implantation, ion implantation dosage can be detected by the change of etch-rate, the method is simple to operate, low price, avoids measuring tested damaging property of wafer simultaneously.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (9)
1. a detection method for ion implantation dosage, is characterized in that, at least comprises the following steps:
Step one, provide bare silicon wafer, and form oxide skin(coating) on described bare silicon wafer surface and at described oxide layer surface deposition of polysilicon layer;
Step 2, ion implantation is carried out to described polysilicon layer, form doped layer;
Step 3, described doped layer to be etched;
Step 4, calculating etch-rate, calculate ion implantation dosage according to described etch-rate.
2. the detection method of ion implantation dosage according to claim 1, is characterized in that: described oxide skin(coating) is silicon dioxide layer.
3. the detection method of ion implantation dosage according to claim 2, is characterized in that: described silicon dioxide layer is formed by thermal oxidation process.
4. the detection method of ion implantation dosage according to claim 1, is characterized in that: in step 3, etching mode is wet etching.
5. the detection method of ion implantation dosage according to claim 4, is characterized in that: described wet etching utilizes weak aqua ammonia as etching solution.
6. the detection method of ion implantation dosage according to claim 5, is characterized in that: the concentration of described weak aqua ammonia is set as 300:1 ~ 200:1.
7. the detection method of ion implantation dosage according to claim 1, is characterized in that: the consistency of thickness of the thickness etched in step 3 and described doped layer.
8. the detection method of ion implantation dosage according to claim 1, it is characterized in that: in step 4 to the calculating of etch-rate comprise measure described test structure before the etch after thickness obtain etched thickness, obtain etch-rate by the corresponding relation of etching period and etched thickness.
9. the detection method of ion implantation dosage according to claim 8, is characterized in that: utilize optical caliper measurement gauges to described test structure before the etch after thickness measure.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107452642A (en) * | 2017-08-31 | 2017-12-08 | 长江存储科技有限责任公司 | A kind of detection method of epitaxial structure etching rate |
| CN107993957A (en) * | 2017-11-30 | 2018-05-04 | 长江存储科技有限责任公司 | The evaluating method of ion implantation concentration detection method and different ions board ion implantation concentration uniformity |
| CN109781049A (en) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | The monitoring method of pollutant in ion injection machine table reaction chamber |
| CN111668128A (en) * | 2020-05-08 | 2020-09-15 | 上海新傲科技股份有限公司 | Hydrogen ion implantation dose detection method and hydrogen ion implantation dose detection system |
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Application publication date: 20151125 |