CN109781049A - The monitoring method of pollutant in ion injection machine table reaction chamber - Google Patents
The monitoring method of pollutant in ion injection machine table reaction chamber Download PDFInfo
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- CN109781049A CN109781049A CN201910056861.4A CN201910056861A CN109781049A CN 109781049 A CN109781049 A CN 109781049A CN 201910056861 A CN201910056861 A CN 201910056861A CN 109781049 A CN109781049 A CN 109781049A
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- dielectric layer
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Abstract
The invention discloses a kind of monitoring method of pollutant in ion injection machine table reaction chamber, which includes following procedure: being previously obtained the dielectric layer etch rate of standard；One substrate for being formed with dielectric layer is provided, the first thickness value of dielectric layer is obtained by measurement；The substrate for being formed with dielectric layer is placed in the reaction chamber of ion injection machine table and carries out ion implanting；Dielectric layer in substrate after ion implanted is performed etching, and it is measured, obtains the second thickness value of dielectric layer；Set etch period obtains the etch rate of dielectric layer when performing etching according to first thickness value and second thickness value and to the dielectric layer, and the etch rate of dielectric layer is compared with the dielectric layer etch rate of standard.The present invention is able to solve since product etch rate variations lead to the problem of damaging wafer.
Description
Technical field
The present invention relates to ic manufacturing technology field, in particular to pollutant in a kind of ion injection machine table reaction chamber
Monitoring method.
Background technique
Ion injection machine table is will form during long-time service, in reaction chamber there are many pollutant, and these are dirty
Dye object is often formed there are many uncertainty, wherein just there is some pollutants can be with the polysilicon on the wafer in reaction chamber
Reaction, changes the chemical property of polysilicon, cause it is subsequent etch rate can change when performing etching to polysilicon,
Irreversible damage is brought to product.For example, due to the chemical property of polysilicon, cause subsequent to carve polysilicon
When erosion, etch rate becomes faster, so that polysilicon is by over etching (over etch), so that polysilicon under identical etching condition
The oxide layer of lower section is etched or wafer itself is etched, to influence the yield of product.
Currently, in the industry there are no there is the measure of pollutant in the reaction chamber for effectively avoiding ion injection machine table, and show
The method of some monitoring ion injection board pollutants can only monitor the contaminant particle number fallen on wafer, can not confirm ion
Whether the pollutant in injection board reaction chamber reacts with the polysilicon of crystal column surface, can not also screen the polycrystalline on wafer
Whether silicon etch rate changes, it is therefore desirable to the side in a kind of monitoring ion injection board reaction chamber the case where pollutant
Method, to solve the above problems.
Summary of the invention
The object of the present invention is to provide a kind of monitoring method of pollutant in ion injection machine table reaction chamber, to monitor from
In son injection board reaction chamber the case where pollutant, solve to cause to damage asking for wafer due to the variation of polysilicon etch rate
Topic.
To solve the above-mentioned problems, the present invention with technical solution by being realized:
The monitoring method of pollutant in a kind of ion injection machine table reaction chamber, includes following procedure: being previously obtained standard
Dielectric layer etch rate；A substrate for being formed with dielectric layer is provided, measurement obtains the first thickness value of the dielectric layer；It will be formed
There is the substrate of dielectric layer to be placed in the reaction chamber of ion injection machine table and carries out ion implantation technology；To the substrate Jing Guo ion implanting
On dielectric layer perform etching, and measure obtain the second thickness value of the dielectric layer；According to the first thickness value and second
Thickness value and while performing etching to the dielectric layer set etch period obtain the etch rate of dielectric layer, and will be described
The etch rate of dielectric layer is compared with the dielectric layer etch rate of the standard, to judge the ion injection machine table reaction
Whether intracavitary pollutant exceeds preset standard.
Further, the etch rate of the dielectric layer is obtained according to following calculation formula: v=(d1-d2)/t, wherein v
For the etch rate of the dielectric layer, d1 is the first thickness value of the dielectric layer, and d2 is the second thickness value of the dielectric layer,
T is etch period set when performing etching to dielectric layer.
Further, the etch rate of the dielectric layer is compared with the dielectric layer etch rate of the standard, if
The dielectric layer etch rate difference of the etch rate of the dielectric layer and the standard without departing from preset range, then judgement it is described from
Pollutant is without departing from preset standard in son injection board reaction chamber；If the medium of the etch rate of the dielectric layer and the standard
Layer etch rate difference exceeds preset range, then judges that pollutant exceeds preset standard in the ion injection machine table reaction chamber.
Further, the dielectric layer is polysilicon layer.
Preferably, providing the substrate that one is formed with polysilicon layer includes following procedure: providing a substrate；On the substrate
Form oxide layer；And the polysilicon layer is formed in the oxide layer.
Preferably, oxide layer is formed using thermal oxidation technology on the substrate.
Preferably, the reaction gas that the thermal oxidation technology uses is the mixed gas of nitrogen and oxygen.
Preferably, the polysilicon layer is performed etching using dry etch process.
Preferably, the etching gas that the dry etch process uses is sulfur hexafluoride, chlorine, oxygen, helium and bromination
One of hydrogen is a variety of.
Preferably, the substrate is Silicon Wafer, and the oxide layer is silica.
The present invention has the effect that
The present invention utilizes the base for being formed with dielectric layer by the way that no contaminated dielectric layer etch rate is obtained ahead of time later
Bottom, and substrate is placed in the reaction chamber of ion injection machine table, ion implanting is carried out, dielectric layer is performed etching again later, and
Obtain above-mentioned dielectric layer etch rate.Obtained dielectric layer etch rate and no contaminated dielectric layer will be obtained ahead of time later
Etch rate is compared, if the dielectric layer etch rate difference of the etch rate of the dielectric layer and the standard is without departing from pre-
If range, then illustrate that the reaction chamber of ion injection machine table is not contaminated, specifically, not containing the dielectric layer etch rate that has an impact
Pollutant.If the dielectric layer etch rate difference of the etch rate of the dielectric layer and the standard exceeds preset range,
Illustrate the reaction chamber of ion injection machine table there are pollutant, which has been able to be reacted with dielectric layer, affects this
The etch rate of dielectric layer, the step of needing to be implemented cleaning ion implanter platform, avoid the occurrence of to realize since product etches
Rate variation leads to the purpose for the problem of damaging wafer.
Detailed description of the invention
Fig. 1 is the flow chart of the monitoring method of pollutant in the ion injection machine table reaction chamber of one embodiment of the invention.
Specific embodiment
The present invention is described in more detail below with reference to accompanying drawings, which show preferably one implementations of the invention
Example, it should be appreciated that those skilled in the art can modify invention described herein and still realize advantageous effects of the invention.
Therefore, following description should be understood as the widely known of those skilled in the art, and be not intended as to limit of the invention
System.
For clarity, not describing whole features of a practical embodiment.In the following description, it is not described in detail well known function
Energy and structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that in any one embodiment of reality
Exploitation in, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to related system or related quotient
The limitation of industry changes into another embodiment by an embodiment.Additionally, it should think that this development may be multiple
It is miscellaneous and time-consuming, but to those skilled in the art it is only routine work.
To be clearer and more comprehensible the purpose of the present invention, feature, a specific embodiment of the invention is made with reference to the accompanying drawing
Further instruction.It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to side
Just, the purpose of one embodiment of the invention is lucidly aided in illustrating.
The embodiment of the present invention provides a kind of monitoring (preliminary examination) method of pollutant in ion injection machine table reaction chamber, such as Fig. 1
Shown, the monitoring method includes the following steps:
Step S1, it is previously obtained the dielectric layer etch rate of standard.
Step S2, a substrate for being formed with dielectric layer is provided, measurement obtains the first thickness value of the dielectric layer.
Step S3, the substrate for being formed with dielectric layer is placed in progress ion implanting work in the reaction chamber of ion injection machine table
Skill.
Step S4, the dielectric layer in the substrate Jing Guo ion implanting is performed etching, and measures and obtains the dielectric layer
Second thickness value.
Step S5, set when being performed etching according to the first thickness value and second thickness value and to the dielectric layer
Etch period obtain the etch rate of dielectric layer, and the dielectric layer of the etch rate of the dielectric layer and the standard is etched
Rate is compared, to judge whether pollutant exceeds preset standard in the ion injection machine table reaction chamber.
The etch rate of medium is obtained by calculation in the present invention, and fast without contaminated dielectric etch with being previously obtained
Rate is compared, if if the dielectric layer etch rate difference of the etch rate of the dielectric layer and the standard exceeds default model
It encloses, then illustrates that there are pollutants in the reaction chamber of ion injection machine table, if the etch rate of the dielectric layer and the standard
Dielectric layer etch rate difference then illustrates that there is no pollutants in the reaction chamber of ion injection machine table without departing from preset range.If
There are pollutant in ion injection machine table, can before treating ion implanting wafer and being injected, cleaning ion implanter platform
Reaction chamber in subsequent etching processes, leads to the variation of dielectric etch rate after solution is reacted due to pollutant with medium, into
And lead to the problem of damaging wafer.
The embodiment of monitoring (preliminary examination) method of pollutant in ion injection machine table reaction chamber exemplified below is with dielectric layer
Polysilicon layer be discussed in detail pollutant in a kind of ion injection machine table reaction chamber of the invention monitoring (preliminary examination) method it is interior
Hold, it is understood that, the contents of the present invention are not restricted to following embodiment, other pass through those of ordinary skill in the art's
The improvement of conventional technical means is also within thought range of the invention.
It executes step S1, be previously obtained etch rate when polysilicon layer is not contaminated, referred to herein as polysilicon layer
Standard etch rate v0。
Step S2, a substrate for being formed with polysilicon layer is provided, measurement obtains the first thickness value d1 of the polysilicon layer.
The step S2 includes following procedure, firstly, growing layer of oxide layer on substrate (bare die).Wherein, substrate is experiment slice,
The method that layer of oxide layer is grown in substrate includes: to carry out (offline) thickness measure under line to above-mentioned oxide layer, is aoxidized
The thickness value of layer.
Above-mentioned oxide layer can be formed on the substrate by thermal oxidation technology.Specifically, the thermal oxide environment packet
Mixed gas containing nitrogen and oxygen.The thermal oxidation technology can be steam in-situ preparation (situ stream-
Generated, ISSG), it can also be rapid thermal oxidation process (RTO) either high-temperature oxydation (HTO).
In the present embodiment, the thermal oxidation technology is rapid thermal oxidation process (RTO), and substrate is placed in RTO chamber, is utilized
Illuminator quickly heats and dry substrate surface, to form oxide layer under oxygen atmosphere.
Substrate is aoxidized by the oxygen in reaction gas, forms oxide layer on the substrate.Usual substrate is
Silicon materials, the material of oxide layer are silica.
Later, one layer of polysilicon layer is grown in the oxide layer.Specifically, the polysilicon layer can be undoped column
The polysilicon of shape structure.
In the present embodiment, polysilicon layer is formed using LPCVD (low-pressure chemical vapor phase deposition) method, utilizes SiH4
(silane) gas is deposited in substrate by thermally decomposing to generate polysilicon as gas source and forms polysilicon layer；Generate undoped column
Processing can be doped to it by the way of ion implantation subsequent after the polysilicon layer of shape structure, but not limited to this,
Such as: in other embodiments, silicon-containing gas and the first impurity gas can also be passed through into the reaction chamber, in the substrate
Upper formation doped silicon material layer: after forming the doped silicon material layer, Xiang Suoshu reaction response is intracavitary to be passed through the second impurity gas,
Doped polysilicon layer is formed, wherein the intracavitary temperature of reaction response is greater than 570 DEG C, and is greater than reaction when forming doped silicon material layer
Temperature in reaction chamber.First impurity gas is AsH3、PH3、B2H6One of or a variety of, second impurity gas
For AsH3、PH3、B2H6One of or it is a variety of.
Then, the thickness of the polysilicon layer is measured, obtains the first thickness value d1 of the polysilicon layer.At this
In embodiment, the thickness measure of polysilicon layer can be used film thickness measurement platform and carry out online thickness measure.
Step S3, the substrate for being formed with polysilicon layer is placed in progress ion implanting work in the reaction chamber of ion injection machine table
Skill.Specifically, ion implantation technique is that the atom of dopant is introduced one of solid material modification in semiconductor field
Method.The process of ion implanting is exactly in vacuum system, and with by what is accelerated, the ion beam containing the atom to be adulterated shines
(injection) solid material is penetrated, a series of physical and chemistry work will occur for the atom or molecule in ion beam and solid material
With, incident ion gradually off-energy, finally rest in material, and material surface ingredient, structure and performance is caused to become
Change, so that the superficial layer (implanted layer) with special nature is formed in selected (being injected) region, thus excellent
Change material surface property, or obtains certain new excellent properties.As a kind of material surface engineering technolog, ion implantation technique tool
Following some other unapproachable particular advantages of conventional surface process technology: (1) it is a kind of pure non-harmful table
Surface treatment technology；(2) be not necessarily to hot activation, without being carried out under hyperthermal environments, because without change workpiece outer dimension with
Surface smoothness；(3) ion implanted layer is occurred a series of physical and chemical interaction with matrix surface by ion beam and is formed
A new superficial layer, it between matrix be not present spallation problems；(4) it no longer needs to carry out machining and heat after ion implanting
Processing.This new and high technology is adulterated in semiconductor material, metal, ceramics, macromolecule due to its unique and prominent advantage
Extremely wide application is obtained on the surface of polymer etc. is modified, achieves huge economic benefit and social benefit.
Ion implantation technique is grown up as the doping techniques of semiconductor material a kind of first, acquired by it at
Function is the best illustration of its superiority.In the electronics industry, ion implanting has become one of microelectronic technique now
Important doping techniques, and an important means of control MOSFET threshold voltage.Therefore large-scale integrated is manufactured in the present age
In circuit, it may be said that be a kind of essential means.Low-temperature-doped, accurate dosage control, masking be easy, uniformity it is good this
A little advantages so that tens kinds of semiconductor devices and integrated circuit made by ion implanted doping have speed it is fast, it is low in energy consumption,
The features such as stability is good, high yield rate.For extensive, super large-scale integration, ion implanting is even more a kind of ideal
Doping process.As previously mentioned, ion implanted layer is very thin, meanwhile, the rectilinear propagation of ion beam guarantees the ion of injection almost
To adulterate perpendicularly inward, horizontal proliferation is extremely small, thus there is a possibility that the lines of circuit are more very thin, lines spacing into
One step shortens, to greatly improve integrated level.In addition, the high-precision and high uniformity of ion implantation technique, can significantly mention
The yield rate of high density integrated circuit.With in technique and theoretic improved day by day, ion implanting have become semiconductor devices and
One of the critical process of integrated circuit production.On the production line of manufacturing semiconductor devices and integrated circuit, widely match
For ion implantation apparatus.
Ion implanting is carried out in a kind of equipment for being called ion implantation apparatus.Ion implantation apparatus is divided into two types:
One kind being used to form deep impurity layer, and another kind is used to form shallow impurity layer.Wherein, the ion implanting of impurity layer shallow for formation
Machine, including medium current implanter and high-intensity currrent implanter, accelerate cation impurity, as canopy (B), phosphorus (P) or
Arsenic (As), and the ion implanting substrate after acceleration.For forming the ion implantation apparatus of deep impurity layer, except including for injecting
Except the conventional ion implanters of cation, it is also equipped with ion converter.When with such implanter injection B+ or P+ from
The period of the day from 11 p.m. to 1 a.m, cation are converted into anion by ion converter.Therefore, with identical acceleration energy, the energy increasing of these cations
It is added to twice of cation energy in conventional ion implanters accelerator.With " deep type " ion note with this ion converter
When entering machine and forming shallow impurity layer, the BF+ ion for being widely used in being formed shallow impurity layer should be converted into anion.Using upper
State that ion implantation apparatus can be used to boron or phosphonium ion is converted into anion and forms deep impurity layer in the substrate.Ion implantation apparatus
Although there is different type as described above, they are generally all made of following major part: ion source, for generating
With the ion beam for drawing certain element, this is the source of ion implantation apparatus；Accelerator, the ion beam drawn to ion source add
Speed reaches required energy；The quality analysis (selection of ionic species) of ion beam；The constraint and control of ion beam；Target
Room；Vacuum system；And ion injection machine table, it is used for transmission, places substrate, the substrate is placed on the board, it is described
Board drives substrate high speed rotation, is that ion beam can be uniformly injected into substrate.While ion beam squeezes into chip, ion beam is also
It can squeeze on board, cause to have pollutant residual in reaction chamber, these pollutants may be sent out with the polysilicon in substrate
Raw reaction.
Step S4, the polysilicon layer in the substrate Jing Guo ion implanting is performed etching, and measures and obtains the polysilicon
The second thickness value d2 of layer.In the present embodiment, dry etch process can be used, polysilicon layer is performed etching, etching gas example
Sulfur hexafluoride (SF is used in this way6), chlorine (Cl2), oxygen (O2) and one of helium (He) hydrogen bromide (HBr) or a variety of.It is right
The thickness of polysilicon layer after etching measures, and obtains the second thickness value d2 of polysilicon layer.
Step S5, the etch rate v of polysilicon layer is obtained according to the first thickness value d1 and second thickness value d2, and will
The etch rate v of the polysilicon layer and polysilicon layer etch rate v of the standard0It is compared, to judge the ion
Whether pollutant exceeds preset standard in injection board reaction chamber, and then judges in ion injection machine table reaction chamber with the presence or absence of dirt
Contaminate object.
This step may include following procedure: according to following calculation formula v=(d1-d2)/t, calculate above-mentioned polysilicon layer
Etch rate v, in formula, t is etch period.By above-mentioned etch rate v and polysilicon layer standard etch rate v0It is compared, obtains
Obtain the difference △ v, i.e. △ v=of the etch rate of the polysilicon layer and the polysilicon layer etch rate of the standard | v-v0|。
If the polysilicon layer etch rate difference △ v of the etch rate of the polysilicon layer and the standard without departing from preset range,
Judge that pollutant is without departing from preset standard in the ion injection machine table reaction chamber, illustrates that above-mentioned polysilicon layer is not infused by ion
Enter the contaminants in reaction chamber, the product (for example, wafer) that can directly execute alignment type production carries out ion implanting work
Skill.If the etch rate of the polysilicon layer and the polysilicon layer etch rate difference △ v of the standard exceed preset range,
Judge that pollutant exceeds preset standard in the ion injection machine table reaction chamber, illustrates that above-mentioned polysilicon layer has been ion implanted
Contaminants in reaction chamber, it is not possible to the step of product of directly execution alignment type production carries out ion implantation technology.It needs
First ion injection machine table is cleaned, the product that alignment type production was completed and then executed in cleaning carries out ion implanting work
The step of skill.
In conclusion the present invention by the way that no contaminated polysilicon layer etch rate is obtained ahead of time, utilizes formation later
There is the substrate of polysilicon layer, and substrate is placed in the reaction chamber of ion injection machine table, ion implanting is carried out, later again to polycrystalline
Silicon layer performs etching, and obtains above-mentioned polysilicon layer etch rate.Later by obtained polysilicon layer etch rate with obtain in advance
No contaminated polysilicon layer etch rate is compared, if the etch rate of the polysilicon layer and the standard is more
Crystal silicon layer etch rate difference then illustrates that there is no pollutants in the reaction chamber of ion injection machine table without departing from preset range.If
The polysilicon layer etch rate difference of the etch rate of the polysilicon layer and the standard exceeds preset range, then illustrates ion
It injects in the reaction chamber of board there are pollutant, which has been able to be reacted with polysilicon layer, affects the polycrystalline
The etch rate of silicon layer, the step of needing to be implemented cleaning ion implanter platform, avoid the occurrence of to realize since product etches speed
Rate variation leads to the purpose for the problem of damaging wafer.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. the monitoring method of pollutant in a kind of ion injection machine table reaction chamber, which is characterized in that include following procedure:
It is previously obtained the dielectric layer etch rate of standard；
A substrate for being formed with dielectric layer is provided, measurement obtains the first thickness value of the dielectric layer；
The substrate for being formed with dielectric layer is placed in the reaction chamber of ion injection machine table and carries out ion implantation technology；
Dielectric layer in substrate Jing Guo ion implanting is performed etching, and measures and obtains the second thickness value of the dielectric layer；
Set etch period obtains when performing etching according to the first thickness value, second thickness value and to the dielectric layer
The etch rate of dielectric layer is obtained, and the etch rate of the dielectric layer and the dielectric layer etch rate of the standard are compared
It is right, to judge whether pollutant exceeds preset standard in the ion injection machine table reaction chamber.
2. the monitoring method of pollutant in ion injection machine table reaction chamber as described in claim 1, which is characterized in that given an account of
The etch rate of matter layer is obtained according to following calculation formula: v=(d1-d2)/t, wherein and v is the etch rate of the dielectric layer,
D1 is the first thickness value of the dielectric layer, and d2 is the second thickness value of the dielectric layer, institute when t is performs etching to dielectric layer
The etch period of setting.
3. the monitoring method of pollutant in ion injection machine table reaction chamber as described in claim 1, which is characterized in that will be described
The etch rate of dielectric layer is compared with the dielectric layer etch rate of the standard, if the etch rate of the dielectric layer and institute
The dielectric layer etch rate difference of standard is stated without departing from preset range, then judges pollutant in the ion injection machine table reaction chamber
Without departing from preset standard；If the dielectric layer etch rate difference of the etch rate of the dielectric layer and the standard exceeds default model
It encloses, then judges that pollutant exceeds preset standard in the ion injection machine table reaction chamber.
4. the monitoring method of pollutant in the ion injection machine table reaction chamber as described in any one of claims 1 to 3, special
Sign is that the dielectric layer is polysilicon layer.
5. the monitoring method of pollutant in ion injection machine table reaction chamber as claimed in claim 4, which is characterized in that provide one
The substrate for being formed with polysilicon layer includes following procedure:
One substrate is provided；
Oxide layer is formed on the substrate；And
The polysilicon layer is formed in the oxide layer.
6. the monitoring method of pollutant in ion injection machine table reaction chamber as claimed in claim 5, which is characterized in that using heat
Oxidation technology forms oxide layer on the substrate.
7. the monitoring method of pollutant in ion injection machine table reaction chamber as claimed in claim 6, which is characterized in that the heat
The reaction gas that oxidation technology uses is the mixed gas of nitrogen and oxygen.
8. the monitoring method of pollutant in ion injection machine table reaction chamber as claimed in claim 4, which is characterized in that using dry
Method etching technics performs etching the polysilicon layer.
9. the monitoring method of pollutant in ion injection machine table reaction chamber as claimed in claim 8, which is characterized in that described dry
The etching gas that method etching technics uses is one of sulfur hexafluoride, chlorine, oxygen, helium and hydrogen bromide or a variety of.
10. the monitoring method of pollutant in the ion injection machine table reaction chamber as described in any one of claim 5~9,
It is characterized in that, the substrate is Silicon Wafer, and the oxide layer is silica.
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