CN107831638A - It is a kind of to detect mask plate and the method for mask stage contact surface pollution - Google Patents
It is a kind of to detect mask plate and the method for mask stage contact surface pollution Download PDFInfo
- Publication number
- CN107831638A CN107831638A CN201711127716.8A CN201711127716A CN107831638A CN 107831638 A CN107831638 A CN 107831638A CN 201711127716 A CN201711127716 A CN 201711127716A CN 107831638 A CN107831638 A CN 107831638A
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- China
- Prior art keywords
- mask plate
- mask
- alignment
- contact surface
- stage contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
Abstract
The invention provides a kind of method for detecting mask plate and being polluted with mask stage contact surface, including：S1：Mask plate is provided and wafer, the mask plate are placed in the mask stage of litho machine and the wafer alignment；S2：Collect the reference value of the alignment compensation parameter of mask plate；S3：Step S1 and S2 is repeated several times, so as to be collected into the reference value of multiple alignment compensation parameters, the higher limit and lower limit of alignment compensation parameter are set according to the reference value for the multiple alignment compensation parameters being collected into；S4：Repeat step S1, the alignment compensation parameter value of this time alignment is collected, if the alignment compensation parameter value exceeds its higher limit or lower limit, litho machine is stopped and cleans mask stage or mask plate；If for the alignment compensation parameter between its higher limit and lower limit, litho machine continues work.The method of detection mask plate and mask stage contact surface pollution provided by the present invention, the situation of mask plate and mask stage contact surface can be monitored in real time.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of detection mask plate pollutes with mask stage contact surface
Method.
Background technology
In ic manufacturing process, a complete chip generally requires the photoetching by more than ten to thirties times,
In so multiple photoetching, it is required for using mask plate, the purpose is to by the pattern transfer on mask plate to wafer.Except
Beyond first time photoetching, figure pair that the photoetching of remaining level before exposure will leave the figure of the level and former level
Standard, the purpose is to covering the figure maximal accuracy on mask plate on wafer on already present figure.But deposited in mask plate
Put and mechanical arm transmit process in, touch pollutant sometimes, so as to cause mask stage with mask plate contact process
Sometimes can also be contaminated, if mask plate has pollution with mask stage contact surface, it will influence mask plate alignment precision, cause to be aligned
Error；And it is uneven and out of focus that mask plate and the pollution of mask stage contact surface can cause mask plate to place, and causes regional area pattern
It is abnormal, and be difficult that mask plate and mask stage contact surface pollution condition are monitored in real time at present.
The content of the invention
It is above-mentioned to solve it is an object of the invention to provide a kind of method for detecting mask plate and being polluted with mask stage contact surface
Problem.
In order to solve the above technical problems, the present invention provides a kind of method for detecting mask plate and being polluted with mask stage contact surface,
Including：
S1：Mask plate is provided and wafer, the mask plate are placed in the mask stage of litho machine and the wafer alignment；
S2：Collect the reference value of mask plate alignment compensation parameter；
S3：Step S1 and S2 is repeated several times, so as to be collected into the reference value of multiple alignment compensation parameters, according to what is be collected into
The reference value of multiple alignment compensation parameters sets the higher limit and lower limit of alignment compensation parameter；
S4：Repeat step S1, the alignment compensation parameter value of this time alignment is collected, if the alignment compensation parameter value exceeds
Its higher limit or lower limit, then litho machine be stopped and clean mask stage or mask plate；If the alignment compensation parameter
Between its higher limit and lower limit, then litho machine continues work.
Optionally, clean after mask stage, focal plane test is carried out to the mask plate after being aligned in step S4.
Optionally, detection out of focus is carried out to the mask pattern after being aligned in step S4.
Optionally, the test point of more than 4 is chosen on the mask plate and carries out focal plane test.
Optionally, after the completion of the alignment in step S4, to the exposing wafer, after the completion of exposure, the wafer is collected
Orthogonal Parameter.
Optionally, the Orthogonal Parameter meets normal distribution.
Optionally, the mask plate is provided with alignment mark.
Optionally, the alignment mark is more than or equal to 4..
The method of detection mask plate and mask stage contact surface pollution provided by the present invention, is joined by mask plate alignment compensation
Count to judge that mask plate and mask stage contact surface with the presence or absence of polluting, can monitor the feelings of mask plate and mask stage contact surface in real time
Condition, note abnormalities in time, avoid occurring abnormal products on a large scale, and aid in testing by Orthogonal Parameter and focal plane test
The situation of mask plate and mask stage contact surface is demonstrate,proved, makes testing result more accurate, erroneous judgement is reduced and fails to judge.
Brief description of the drawings
Fig. 1 is the distribution map of litho machine A alignment compensation parameters；
Fig. 2 is the distribution map of litho machine B alignment compensation parameters；
Fig. 3 is the distribution map of Orthogonal Parameter；
Fig. 4 is the discrete distribution map of Orthogonal Parameter；
Fig. 5 is the distribution map when test result after the test of focal plane is normal；
Fig. 6 is the detection mask plate and the flow of the method for mask stage contact surface pollution that one embodiment of the invention is provided
Figure.
Embodiment
Below in conjunction with the drawings and specific embodiments to detection mask plate proposed by the present invention and the pollution of mask stage contact surface
Method is described in further detail.According to following explanation and claims, advantages and features of the invention will become apparent from.Need
Bright, accompanying drawing uses using very simplified form and non-accurately ratio, only to convenience, lucidly aids in illustrating
The purpose of the embodiment of the present invention.
Inventors herein have recognized that when existing mask plate and mask stage contact surface have pollution, it is difficult to monitor in real time
Arrive.
Therefore, this application provides a kind of method for detecting mask plate and the pollution of mask stage contact surface, comprise the following steps：
S1：Mask plate is provided and wafer, the mask plate are placed in the mask stage of litho machine and the wafer alignment；
S2：Collect the reference value of the alignment compensation parameter of mask plate；
S3：Step S1 and S2 is repeated several times, so as to be collected into the reference value of multiple alignment compensation parameters, according to what is be collected into
The reference value of multiple alignment compensation parameters sets the higher limit and lower limit of alignment compensation parameter；
S4：Repeat step S1, the alignment compensation parameter value of this time alignment is collected, if the alignment compensation parameter value exceeds
Its higher limit or lower limit, then litho machine be stopped and clean mask stage；If the alignment compensation parameter is in its higher limit
Between lower limit, then litho machine continues work.
Specifically, step S1 process is：Wafer is during photoetching, it is necessary to which mask plate is placed on into covering for litho machine
On film platform, it is aligned with the wafer.The mask plate is provided with alignment mark, and general alignment mark is more than or equal to 4, can
To be that each edge of the mask plate respectively has an alignment mark.Each alignment mark such as water including arranging in the horizontal direction
Flat mark and the vertical mark vertically arranged, are distributed the alignment for horizontal direction and vertical direction.Alignment procedures point
For mask plate alignment and wafer alignment.In mask plate alignment procedures, the departure of each alignment mark of photoetching machine testing mask plate,
Calculate the alignment compensation parameter of mask plate.During wafer alignment, corresponding alignment compensation parameter, final photoetching can be also produced
Machine will combine mask plate alignment compensation parameter and wafer alignment compensating parameter amendment is adjusted and is exposed.
After calculating mask plate alignment compensation parameter, computer system collects the value of the alignment compensation parameter, for convenience
Understand, the value of alignment compensation parameter is referred to as the reference value of alignment compensation parameter herein, and above steps may be repeated multiple times afterwards, so as to receive
Collect the reference value of multiple alignment compensation parameters.
The reference value of mask plate alignment compensation parameter on litho machine A is as shown in figure 1, its abscissa represents that collecting alignment mends
Repay the specific time of parameter, ordinate represents the reference value (urad) of alignment compensation parameter, the target of the alignment compensation parameter
It is worth and adds and subtracts 2.5urad respectively for -104.5urad, desired value, early warning line, the early warning line higher limit -102urad, lower limit is set
Value -107urad.The desired value of the alignment compensation parameter has a different values in different situations, its value and litho machine
Benchmark is set with relation, and in actual production, the benchmark setting of different litho machines can be set according to actual conditions, may
There is bigger difference.Mask plate alignment compensation parameter reference values on litho machine B are as shown in Fig. 2 abscissa represents that collecting alignment mends
Repay the specific time of parameter reference values, ordinate represents the reference value (urad) of alignment compensation parameter, as shown in Figure 2, described right
The desired value of quasi- compensating parameter is 0urad, and early warning line higher limit is 2.5urad, and lower limit is -2.5urad, people in the art
Member is it is understood that the early warning line up/down limit value can be configured according to the situation of actual litho machine.
After the early warning line for setting alignment compensation parameter, repeat step S1 process, and it is right caused by collection this time alignment
Quasi- compensating parameter value, the shutdown inspection if alignment compensation parameter value is collected into beyond early warning line, such as carried out on litho machine A
During photoetching, it is assumed that the alignment compensation parameter value is -109urad, less than the lower limit of early warning line, then shutdown inspection,
Mask stage or mask plate are cleared up, if being collected into alignment compensation parameter value without departing from early warning line, litho machine continue into
Row production.If single mask plate alignment compensation parameter exceeds early warning line, then the mask plate is cleaned, if continuously
Different mask plate alignment compensation parameters exceed early warning line, then mask stage are cleaned.
In the photoetching process after setting the early warning line of alignment compensation parameter, after the completion of wafer is aligned with mask plate,
The wafer is exposed, after completion of the exposure, the Orthogonal Parameter of wafer can be collected, the Orthogonal Parameter meets normal state point
Cloth, the Orthogonal Parameter can verify alignment result, whether exceed early warning line from another angle checking alignment compensation parameter value
Scope.
As shown in figure 3, its abscissa represents to collect the time of Orthogonal Parameter, ordinate statement Orthogonal Parameter value (urad),
2 points of circled portion are substantially abnormal in Fig. 3, and then analysis chart 4, and Fig. 4 abscissa represents to collect the time of Orthogonal Parameter, with
Fig. 3 abscissa is corresponding, and ordinate represents the σ values (standard deviation) of Orthogonal Parameter, by analysis chart 4 it can be found that different in Fig. 3
The standard deviation of normal point is more than 3 σ, is unsatisfactory for normal distribution, belongs to significant error and nonrandom error, and do not meet production will
Ask, then hard stop inspection, mask stage or mask plate are cleared up, cleaning finds that Orthogonal Parameter value returns normal (Fig. 3 later
Point after middle abnormity point is shown normally).
After mask stage is cleared up, detection cleaning result can be tested by focal plane, the focal plane test is to set
Put in the photoetching process after the early warning line of alignment compensation parameter, in the reticle pattern after the completion of wafer is aligned with mask plate
Multiple test points are chosen, generally require more than 4 test points, can be distributed according to test pattern and choose the row of upper, middle and lower 3, often row is left
, totally 9 points, test the Focal-plane Datas of this 9 test points at middle right 3 points, if difference exceeds the varifocal scope of product between each point,
Then think that mask plate local pattern is out of focus, if each point is in varifocal scope, then it is assumed that focal plane is normal.As shown in figure 5,9
The numerical value of individual point is both less than 0.1um, and focal plane is normal.In the present embodiment, the varifocal scope of the test point be less than
0.1um, it will be appreciated by persons skilled in the art that the varifocal scope of the test point can be carried out according to actual conditions
Setting.
In the photoetching process after setting the early warning line of alignment compensation parameter, after the completion of wafer is aligned with mask plate,
Detection out of focus can be carried out to the mask pattern after alignment.When reticle pattern has situation out of focus to occur, the region out of focus turns
The pattern moved on on wafer will line width exception or pattern deformation even pattern loss.By detect on wafer pattern whether office
Portion is out of focus, and mask plate and mask stage contact surface are detected with the presence or absence of pollution from another angle.On wafer, the exception will expose
Light unit fixed position repeats to occur.The local method out of focus of detection, can be to be measured by ESEM four in exposing unit
Whether the pattern line-width of individual Angle Position is abnormal, and fixed bit in exposing unit can also have been detected whether by way of scanning defect
Put existing defects pattern.
The method of detection mask plate and mask stage contact surface pollution provided by the present invention, is sentenced by alignment compensation parameter
Disconnected mask plate and mask stage contact surface can monitor the situation of mask plate and mask stage contact surface in real time with the presence or absence of polluting, and
When note abnormalities, avoid occurring abnormal products on a large scale, and aid in checking to cover by Orthogonal Parameter and focal plane test
The situation of film version and mask stage contact surface, make testing result more accurate, reduce erroneous judgement and fail to judge.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Scope.
Claims (8)
1. a kind of detect mask plate and the method for mask stage contact surface pollution, it is characterised in that including：
S1：Mask plate is provided and wafer, the mask plate are placed in the mask stage of litho machine and the wafer alignment；
S2：Collect the reference value of the alignment compensation parameter of mask plate；
S3：Step S1 and S2 is repeated several times, it is multiple according to what is be collected into so as to be collected into the reference value of multiple alignment compensation parameters
The reference value of alignment compensation parameter sets the higher limit and lower limit of alignment compensation parameter；
S4：Repeat step S1, the alignment compensation parameter value of this time alignment is collected, if the alignment compensation parameter value is beyond thereon
Limit value or lower limit, then litho machine be stopped and clean mask stage or mask plate；If the alignment compensation parameter is at it
Between higher limit and lower limit, then litho machine continues work.
2. detection mask plate and the method for mask stage contact surface pollution as claimed in claim 1, it is characterised in that cleaning mask
After platform, focal plane test is carried out to the mask plate after being aligned in step S4.
3. detection mask plate and the method for mask stage contact surface pollution as claimed in claim 1, it is characterised in that to step S4
Mask pattern after middle alignment carries out detection out of focus.
4. detection mask plate and the method for mask stage contact surface pollution as claimed in claim 2 or claim 3, it is characterised in that described
The test point of more than 4 is chosen on mask plate and carries out focal plane test.
5. detection mask plate and the method for mask stage contact surface pollution as claimed in claim 1, it is characterised in that in step S4
Alignment after the completion of, to the exposing wafer, after the completion of exposure, collect the Orthogonal Parameter of the wafer.
6. detection mask plate and the method for mask stage contact surface pollution as claimed in claim 5, it is characterised in that described orthogonal
Parameter meets normal distribution.
7. detection mask plate and the method for mask stage contact surface pollution as claimed in claim 1, it is characterised in that the mask
Version is provided with alignment mark.
8. detection mask plate and the method for mask stage contact surface pollution as claimed in claim 7, it is characterised in that the alignment
Mark is more than or equal to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711127716.8A CN107831638B (en) | 2017-11-15 | 2017-11-15 | Method for detecting pollution of contact surface of mask and mask table |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711127716.8A CN107831638B (en) | 2017-11-15 | 2017-11-15 | Method for detecting pollution of contact surface of mask and mask table |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107831638A true CN107831638A (en) | 2018-03-23 |
| CN107831638B CN107831638B (en) | 2020-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711127716.8A Active CN107831638B (en) | 2017-11-15 | 2017-11-15 | Method for detecting pollution of contact surface of mask and mask table |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109781049A (en) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | The monitoring method of pollutant in ion injection machine table reaction chamber |
| EP3667423A1 (en) * | 2018-11-30 | 2020-06-17 | Canon Kabushiki Kaisha | Lithography apparatus, determination method, and method of manufacturing an article |
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| JP2000323396A (en) * | 1999-05-13 | 2000-11-24 | Canon Inc | Exposure method, aligner, and manufacture thereof |
| CN1448796A (en) * | 2002-01-18 | 2003-10-15 | Asml荷兰有限公司 | Lithographic apparatus, apparatus cleaning method, device manufacturing method and device manufactured thereby |
| CN103797329A (en) * | 2011-09-16 | 2014-05-14 | Asml荷兰有限公司 | Apparatus for monitoring a lithographic patterning device |
| CN104662480A (en) * | 2012-09-28 | 2015-05-27 | Asml控股股份有限公司 | Quantitative reticle distortion measurement system |
| CN105807574A (en) * | 2014-12-30 | 2016-07-27 | 上海微电子装备有限公司 | Mask transmission device, exposure device and mask transmission method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000323396A (en) * | 1999-05-13 | 2000-11-24 | Canon Inc | Exposure method, aligner, and manufacture thereof |
| CN1448796A (en) * | 2002-01-18 | 2003-10-15 | Asml荷兰有限公司 | Lithographic apparatus, apparatus cleaning method, device manufacturing method and device manufactured thereby |
| CN103797329A (en) * | 2011-09-16 | 2014-05-14 | Asml荷兰有限公司 | Apparatus for monitoring a lithographic patterning device |
| CN104662480A (en) * | 2012-09-28 | 2015-05-27 | Asml控股股份有限公司 | Quantitative reticle distortion measurement system |
| CN105807574A (en) * | 2014-12-30 | 2016-07-27 | 上海微电子装备有限公司 | Mask transmission device, exposure device and mask transmission method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3667423A1 (en) * | 2018-11-30 | 2020-06-17 | Canon Kabushiki Kaisha | Lithography apparatus, determination method, and method of manufacturing an article |
| US11275319B2 (en) | 2018-11-30 | 2022-03-15 | Canon Kabushiki Kaisha | Lithography apparatus, determination method, and method of manufacturing an article |
| CN109781049A (en) * | 2019-01-22 | 2019-05-21 | 上海华虹宏力半导体制造有限公司 | The monitoring method of pollutant in ion injection machine table reaction chamber |
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| Publication number | Publication date |
|---|---|
| CN107831638B (en) | 2020-05-01 |
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