CN101894776A - Method for detecting nitrogen doped concentration by measuring resistance change - Google Patents
Method for detecting nitrogen doped concentration by measuring resistance change Download PDFInfo
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- CN101894776A CN101894776A CN2009100517017A CN200910051701A CN101894776A CN 101894776 A CN101894776 A CN 101894776A CN 2009100517017 A CN2009100517017 A CN 2009100517017A CN 200910051701 A CN200910051701 A CN 200910051701A CN 101894776 A CN101894776 A CN 101894776A
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Abstract
The invention provides a method for detecting nitrogen doped concentration by measuring resistance change, which can be used for monitoring the nitrogen doped concentration of a gate oxide layer in the manufacture process of an MOS (Metal Oxide Semiconductor) device. The method mainly comprises the following steps of: adopting a certain number of wafers as contrast wafers for a test and simulating for carrying out the doping process in the manufacture of the MOS device by the wafers; then measuring a resistance change Rs value of a nitrogen doped layer by a four point probe measurement method; making a curve graph according to a mutual corresponding relation of nitrogen dosage and the Rs value; and reversely deducing the nitrogen dosage from the Rs value measured in the practical procedure of the MOS device according to the curve graph.
Description
Technical field
The present invention relates to the MOS device manufacturing processes in the integrated circuit fabrication process, relate in particular to a kind of method that detects nitrogen doped concentration in the grid oxide layer.
Background technology
In the ic manufacturing process, often use doping process, the method for mixing in semiconductor is divided into diffusion and ion implantation.Diffusion method is that impurity gas is imported the high temperature furnace be placed with silicon chip, with a kind of method of diffusion of impurities in the silicon chip.Advantage is to produce in batches, obtains high-concentration dopant.
Ion implantation is to utilize the electric field accelerated impurity ion, is injected into the method in the silicon substrate.The characteristics of ion implantation are critically to control the low concentration impurity distribution that diffusion method is difficult to obtain.In the MOS device fabrication, prevent in the device isolation operation that the raceway groove that parasitic channel is used from blocking, adjust the channel doping that threshold voltage is used, the trap formation of CMOS and the formation of source-drain area will adopt ion implantation to mix.Ion implantation normally will desire to mix impurity in the semiconductor in ion sourceization, quickens by the selected ion of quality analysis magnetic pole then, injects substrate.
The diffusion concentration of impurity depends on the size of the diffusion coefficient D relevant with temperature and the length of diffusion time.In the silicon integrated circuit technology, often adopt boron as p type impurity, phosphorus is as N type impurity.Their solid solubility is higher.In addition, also use the little impurity of diffusion coefficient such as arsenic and antimony, this is effective for not wishing to produce the occasion that impurity distributes again.The fundamental characteristics parameter of impurity diffusion layer is square resistance RF, and available four-probe measurement is measured.
For the technology node below the 0.13 μ m, need obtain thinner gate insulation thickness (EOT) and gate dielectric by some nitrogen dopping process with high-k, for example by uncoupling pecvd nitride (DPN, Decoupled Plasma Nitridation) processing procedure, perhaps no annealing process etc. makes grid oxide layer mix the nitrogen element after the wet oxidation.In this process, the concentration of nitrogen element was critical parameter after doping was finished, and it directly has influence on the MOS device performance.Usually use the nitrogen % content in XPS/Auger analytical methods such as (x-ray photoelectron power spectrum/Auger spectrometers) the detection rete at present, this just means that expensive time of needs and expense are in the debugging and maintenance of relevant device.In addition, the result of these analytical methods also can present certain variation owing to different operating conditions, can not guarantee entirely accurate.
Summary of the invention
At at present behind the nitrogen dopping process, in order to detecting the analytical method cost prohibitive of nitrogen doped concentration, and result's shortcoming of influenced by operating condition, the present invention is proposed.
The objective of the invention is to, a kind of method of measuring resistance change-detection nitrogen doped concentration is provided, by measuring the resistance variations of nitrogen diffusion layer, and according to the nitrogen doped concentration of this nitrogen diffusion layer of numerical simulation calculation that records.This kind method can substitute analytical methods such as XPS/Auger, and accuracy is higher.
In the MOS device fabrication, add nitrogen [N] in the grid oxide layer film and can prevent boron diffusion, it is closely related with the performance of boron implantation performance to contain how much nitrogen element in the described grid oxide layer.PMOS device schematic diagram as shown in Figure 1, numeral 3 expressions are doped with the polysilicon gate of boron element, and grid oxide layer 2 is doped with the nitrogen element, and 1 is the silicon substrate of N type.In high temperature process, the nitrogen element that mixes in the grid oxide layer 2 can stop effectively that the boron in the polysilicon gate 3 spreads to silicon substrate 1.This type of MOS structure need detect the nitrogen doped concentration of grid oxide layer usually.
In the scheme that the present invention proposes, can detect the nitrogen element content in the grid oxide layer film by the increased resistance value Rs of reflection boron implantation amount.Different nitrogen doped gate oxygen layer films is carried out can detecting the boron dosage that nitrogen doping grid oxide layer stops by the resistance change Rs (shift resist) of MEASUREMENTS OF THIN after the boron ion implants.
According to the main points of above introduction, designed following step in the present invention in order to grid oxide layer nitrogen doped concentration in the test sample wafer:
Get a plurality of silicon wafers wafer (control wafer) in contrast, thereon with the oxidizing process (RTO that for example is rapidly heated, Rapid Thermal Oxidation) etc. conventional method forms oxide skin(coating), silicon dioxide layer for example, purpose is to make this oxide skin(coating) be equivalent to grid oxide layer in the MOS device of sample wafer, its thickness is about 10～
Be doped with the nitrogen element [N] of variable concentrations in the silicon dioxide layer on the different contrast wafers;
Under the 5KeV condition, go up the oxide skin(coating) that forms and carry out the implantation of boron ion to contrast wafer (control wafer);
Behind the annealing that is rapidly heated (RTA, Rapid Thermal Anneal) processing procedure, described contrast wafer is waited until measurement.
Preferably, being used to handle the various process parameter that contrast wafer in these operating procedures should be consistent with the process parameter of sample wafer, for example, form when being equivalent to the oxide skin(coating) of MOS device grid oxide layer on the contrast wafer, can adopt the same process condition of described MOS device grid oxide layer, generally contrast wafer and sample wafer can be placed in the same board, under identical condition, handle, be equal to the grid oxide layer in the MOS device of sample wafer to guarantee the oxide skin(coating) that forms on the contrast wafer.
The resistance value Rs of the oxide skin(coating) after then mixing on the measuring samples wafer, method can adopt for example four probe method.Write down the oxide skin(coating) Rs value of a plurality of contrast wafers under the different levels of doping, and draw out the curve model of reflection nitrogen doped concentration and Rs value corresponding relation according to the corresponding relation between described nitrogen doped concentration and the Rs value.
Above-mentioned curve model can be used for the nitrogen doped concentration according to grid oxide layer on the Rs value analog computation sample wafer, particularly, measure the Rs value of grid oxide layer on the sample wafer earlier by methods such as for example four pin mensurations, promptly can come the actual corresponding nitrogen doped concentration of this Rs value of analog computation according to existing curve model.
The invention has the advantages that, this method is actually contrast wafer (controlwafer) by some carries out simulated experiment and obtains corresponding relation curve model between nitrogen doped concentration and the Rs value, calculates nitrogen doped concentration with four pin mensuration measure R s values by described modeling again.With respect to the mode that directly detects nitrogen doped concentration by analytical methods such as XPS/Auger, method of the present invention is more convenient undoubtedly quick, can save the expense and the time that are used to maintain processing procedure in a large number.
On the other hand, described XPS/Auger belongs to the rigorous analysis instrument, and its analysis result is subjected to the influence of applied environment easily and is inaccurate.For method of the present invention, then there is not such problem, as long as it is abundant to be used to test the contrast number of wafers of nitrogen doped concentration and Rs value curve chart in theory, nitrogen doped concentration is intensive more in selected scope, and method of the present invention can point-devicely reflect the actual nitrogen doped concentration of grid oxide layer in the sample wafer.
For be more readily understood purpose of the present invention, feature with and advantage, below conjunction with figs. and embodiment are described in detail the present invention.
Description of drawings
The accompanying drawing that comprises among the application is a component part of specification, and accompanying drawing and specification and claims one are used from explanation flesh and blood of the present invention, are used for understanding better the present invention.
Fig. 1 is the PMOS structural representation of a routine;
Fig. 2 is according to the inventive method, forms the contrast wafer schematic diagram of oxide skin(coating) and process nitrogen dopping process on the contrast wafer;
Fig. 3 is for carrying out the schematic diagram that the boron ion is implanted to contrast wafer shown in Figure 2;
Fig. 4 is the schematic diagram of the contrast wafer of boron ion after implanting after through the annealing that is rapidly heated;
The curve chart that Fig. 5 draws for the increased resistance value Rs that records with four probe method according to method of the present invention and corresponding nitrogen doped concentration.
Embodiment
In order to understand technology of the present invention better, be described further below in conjunction with specific embodiments of the invention, but it does not limit the present invention.
Get four wafers wafer (control wafer) in contrast, form oxide skin(coating) with the oxidizing process that is rapidly heated (RTO, Rapid Thermal Oxidation) thereon, for example silicon dioxide layer is equivalent to the grid oxide layer in the MOS device, and its thickness is about 10～
Be doped with the nitrogen element [N] of variable concentrations in the silicon dioxide layer on the different contrast wafers, the concentration of mixing is controlled at 5 * 10 usually
14～7 * 10
15Atom/cm
2Between.In the present embodiment, the nitrogen doped concentration of four contrast wafers is respectively 0%, 1.2%, 1.6%, 2.8%;
Fig. 2 is the schematic diagram of above-mentioned contrast wafer, and wherein numeral 1 is represented silicon wafer substrate, and numeral 2 expression nitrogen doped silica layers are equivalent to the grid oxide layer in the MOS device.
Under the 5KeV condition wafer (control wafer) that respectively contrasts after the nitrogen doping is being carried out the implantation of boron ion, as shown in Figure 3, the boron implant dosage is controlled at 1 * 10 usually
15～2 * 10
15Between;
Annealing (RTA, the Rapid Thermal Anneal) processing procedure that is rapidly heated then, general, for technical scheme of the present invention, the temperature that is fit to is about 900～1000 ℃, and the time that continues annealing is about 5～20 seconds.For example, can continue annealing in 10 seconds down at 950 ℃, the schematic diagram of described contrast wafer as shown in Figure 4, implanted boron element in the nitrogen doped silica film, because the nitrogen of different levels of doping is to the barrier effect difference of boron diffusion, the resistance variations that silica membrane on the last different contrast wafer is implanted by the boron ion and influenced and show is also different, and this moment, available four probe method was surveyed the increased resistance value Rs of doping rear film.
Table 1
Table 1 is depicted as the real data that is write down according to the above-mentioned steps operation, according to the mutual corresponding relation of Rs value that records at last under the different nitrogen doped concentrations, can draw out the curve model of reflection nitrogen doped concentration and Rs value corresponding relation, as shown in Figure 5, ordinate is represented the Rs value among the figure, and abscissa is represented nitrogen doped concentration.This curve model can be used for calculating the corresponding nitrogen doped concentration of simulation according to the Rs value, particularly, for the MOS device in the actual processing procedure, need only the Rs value of measuring the nitrogen dopant diffusion layer by four pin mensurations, promptly can obtain its nitrogen doped concentration by analog computation according to this curve model.
Claims (6)
1. the method by measuring resistance change-detection nitrogen doped concentration is used for it is characterized in that comprising the following steps: at MOS device manufacturing processes monitoring grid oxide layer nitrogen doped concentration
1) on a plurality of contrast wafers, forms the oxide skin(coating) that is equivalent to grid oxide layer in the MOS device;
2) oxide skin(coating) that forms on described a plurality of contrast wafers mixes with the nitrogen element of variable concentrations respectively;
3) oxide skin(coating) that forms on described a plurality of contrast wafers carries out the implantation of boron ion and makes the contrast wafer by the annealing process that is rapidly heated;
4) the resistance value Rs of the oxide skin(coating) on the described a plurality of contrast wafers of measurement;
5) corresponding relation between different nitrogen doped concentration of record and the Rs value that records obtains reflecting the curve model of nitrogen doped concentration and Rs value corresponding relation;
6) the resistance value Rs of the above grid oxide layer of measuring samples wafer, and be nitrogen doped concentration according to the above grid oxide layer of calculation sample wafer with described curve model.
2. the method for claim 1 is characterized in that, in the step 1) THICKNESS CONTROL of oxide skin(coating) 10～
3. the method for claim 1 is characterized in that step 2) in the nitrogen concentration of mixing be controlled at 5 * 10
14～7 * 10
15Atom/cm
2Between.
4. the method for claim 1 is characterized in that, the condition that the boron ion is implanted in the step 3) is controlled to be: the implantation energy and 1 * 10 of 5KeV
15～2 * 10
15Between implant dosage.
5. the method for claim 1 is characterized in that, the condition of the annealing process that is rapidly heated described in the step 3) is 900～1000 ℃ and continues annealing 5～20 seconds down.
6. the method for claim 1 is characterized in that, the method for the Rs of measured resistance value described in the step 4) is a four probe method.
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| CN104677953A (en) * | 2015-02-27 | 2015-06-03 | 山西潞安太阳能科技有限责任公司 | Method for quickly detecting black core sheet |
| CN105097584A (en) * | 2014-05-15 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Detection method for ion implantation dosage |
| CN109283298A (en) * | 2018-11-13 | 2019-01-29 | 中国科学院微电子研究所 | SiC-SiO in SiC oxidation2The measuring method and its application of interface carbon residual concentration |
| CN109473369A (en) * | 2018-10-29 | 2019-03-15 | 西安微电子技术研究所 | A kind of method of doping concentration in monitoring high temperature furnace pipe |
| CN113363137A (en) * | 2021-05-28 | 2021-09-07 | 上海华力微电子有限公司 | Monitoring method for SiGe structure carrier concentration |
| CN115692236A (en) * | 2022-12-16 | 2023-02-03 | 广州粤芯半导体技术有限公司 | Method for detecting RTA temperature in silicade process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2830845B2 (en) * | 1996-06-26 | 1998-12-02 | 日本電気株式会社 | Semiconductor storage device |
| TW472337B (en) * | 2001-02-26 | 2002-01-11 | Promos Technologies Inc | Test device on a semiconductor chip and related failure detecting method |
| US6897118B1 (en) * | 2004-02-11 | 2005-05-24 | Chartered Semiconductor Manufacturing Ltd. | Method of multiple pulse laser annealing to activate ultra-shallow junctions |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105097584A (en) * | 2014-05-15 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Detection method for ion implantation dosage |
| CN104677953A (en) * | 2015-02-27 | 2015-06-03 | 山西潞安太阳能科技有限责任公司 | Method for quickly detecting black core sheet |
| CN104677953B (en) * | 2015-02-27 | 2018-01-30 | 山西潞安太阳能科技有限责任公司 | A kind of method of quick detection evil mind piece |
| CN109473369A (en) * | 2018-10-29 | 2019-03-15 | 西安微电子技术研究所 | A kind of method of doping concentration in monitoring high temperature furnace pipe |
| CN109283298A (en) * | 2018-11-13 | 2019-01-29 | 中国科学院微电子研究所 | SiC-SiO in SiC oxidation2The measuring method and its application of interface carbon residual concentration |
| CN113363137A (en) * | 2021-05-28 | 2021-09-07 | 上海华力微电子有限公司 | Monitoring method for SiGe structure carrier concentration |
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