CN109283298A - SiC-SiO in SiC oxidation2The measuring method and its application of interface carbon residual concentration - Google Patents
SiC-SiO in SiC oxidation2The measuring method and its application of interface carbon residual concentration Download PDFInfo
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- CN109283298A CN109283298A CN201811349529.9A CN201811349529A CN109283298A CN 109283298 A CN109283298 A CN 109283298A CN 201811349529 A CN201811349529 A CN 201811349529A CN 109283298 A CN109283298 A CN 109283298A
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- sio
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- carbon monoxide
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 31
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 47
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910002091 carbon monoxide Inorganic materials 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 18
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 18
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 18
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 18
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- 238000003795 desorption Methods 0.000 claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 4
- 238000013441 quality evaluation Methods 0.000 claims description 3
- 238000004817 gas chromatography Methods 0.000 claims description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 1
- 229960004424 carbon dioxide Drugs 0.000 claims 1
- 229910002090 carbon oxide Inorganic materials 0.000 claims 1
- 238000012216 screening Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 208000003556 Dry Eye Syndromes Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000968 intestinal effect Effects 0.000 description 1
- 230000000155 isotopic effect Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
Abstract
SiC-SiO in a kind of SiC oxidation2The measuring method of interface carbon residual concentration, comprising: providing one includes SiC-SiO2The silicon carbide substrates at interface, described includes SiC-SiO2The silicon carbide substrates at interface are aoxidized by SiC and are obtained；It is injected using ion implanting into the silicon carbide substrates18O isotope,18O isotope and SiC-SiO2Interface carbon generates carbon monoxide C18O；Heating the silicon carbide substrates makes carbon monoxide C18O desorption；Collect the carbon monoxide C for being desorbed out18O, and detect its quality；According to carbon monoxide C18The Mass Calculation SiC-SiO of O2Interface carbon residual concentration.Method of the invention is easy to operate, and accuracy is high, the SiC-SiO obtained suitable for aoxidizing SiC substrate by various methods2The stability and reliability of product can be improved by screening the SiC substrate of qualified carbon residual concentration in carbon residual in interface.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to SiC-SiO in a kind of SiC oxidation2Interface carbon residual concentration
Measuring method and its application.
Background technique
Silicon carbide (SiC) is third generation semiconductor-semiconductor material with wide forbidden band, big, the critical breakdown field with forbidden bandwidth
The advantages that Qiang Gao, high thermal conductivity is the ideal material for making high pressure, large power semiconductor device, under SiC power electronic devices is
The core of generation efficient electrical power electronics technologies.SiC MOSFETs is smaller compared to Si MOSFETs conducting resistance, switch is electric
Pressure is higher, applying frequency is higher, temperature performance is more preferable, especially suitable for power switch application.The integrated system of SiCMOSFET device
Technique, especially gate medium technique are made, is the hot spot of current research.
SiC is uniquely being capable of thermally grown SiO2Compound semiconductor, this, which allows for SiC, may be implemented all Si MOS's
Device architecture.The thermal oxide of SiC needs oxidizing temperature more higher than Si, and oxidizing temperature is up to 1300 DEG C.The SiC oxygen of mainstream at present
Chemical industry skill is mainly to use the oxidation furnace of resistance heating manner, and cardinal principle is reacting based on silicon carbide and oxygen molecule, but
The defects of being this method with oxygen molecule oxidation, be easy to causeing the dangling bonds of interface residual carbon cluster, Si-O-C key, C, boundary
Face quality degradation, causes mobility to reduce, as shown in Figure 1.
Therefore, SiC-SiO2The carbon residual concentration of interface is the SiC-SiO for evaluating the preparation of SiC oxidation technology2Interface quality
Important indicator, however at present there is no an effective method.
Summary of the invention
In order to solve the problems in the existing technology, the invention proposes SiC-SiO in a kind of SiC oxidation2Interface carbon
The measuring method and its application of residual concentration, can be with Accurate Determining SiC-SiO2Interface carbon residual concentration.
In order to achieve the above object, the invention adopts the following technical scheme:
SiC-SiO in a kind of SiC oxidation2The measuring method of interface carbon residual concentration, comprising:
There is provided one includes SiC-SiO2The silicon carbide substrates at interface, described includes SiC-SiO2The silicon carbide substrates at interface
It is aoxidized and is obtained by SiC；
It is injected using ion implanting into the silicon carbide substrates18O isotope,18O isotope and SiC-SiO2Interface carbon is raw
At carbon monoxide C18O；
Heating the silicon carbide substrates makes carbon monoxide C18O desorption；
Collect the carbon monoxide C for being desorbed out18O, and detect its quality；
According to carbon monoxide C18The Mass Calculation SiC-SiO of O2Interface carbon residual concentration.
Preferably, the time of the ion implanting is 100-200s.
Preferably, carbon monoxide C18O desorption carries out under vacuum..
Preferably, carbon monoxide C18The temperature of O desorption is 200-300 DEG C.
Preferably, the carbon monoxide C18The quality of O is measured using gas-chromatography and isotope-ratio mass spectrometer.
On the other hand, invention also proposed a kind of measuring method in SiC-SiO2Interface quality evaluation or SiC oxidation
The application that sample sifter is chosen.
Compared with prior art, the present invention makes SiC-SiO by the method for ion implanting2The remaining carbon in interface with18O is combined
Generate carbon monoxide C18Then O makes to generate carbon monoxide C in the way of thermal desorption18O overflows, by measuring carbon monoxide
C18The content of O is that can determine the content of interface carbon, and method of the invention is easy to operate, and accuracy is high, is suitable for by various
The SiC-SiO that method oxidation SiC substrate obtains2Interface carbon residual can be with by screening the SiC substrate of qualified carbon residual concentration
Improve the stability and reliability of product.
Detailed description of the invention
Fig. 1 is SiC/SiO2Boundary defect schematic diagram.
The reaction principle schematic diagram of Fig. 2 measuring method of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in further detail.
Oxygen is easy to produce carbon residual when chemically reacting with silicon carbide, this part residual is present in silica
On the one hand interface causes gate medium to leak electricity, still further aspect forms the scattering center at interface, to influence the migration of silicon carbide
Rate, and then cause the output electric current of device to reduce, and induce integrity problem.Therefore, accurately the carbon of measurement interface remains, into
And the silicon carbide substrates for screening interface quality qualification are very important.
As shown in Fig. 2, measuring method principle proposed by the present invention is to pass through18The method of O ion implanting makes SiC-SiO2Boundary
The remaining carbon in face with18O, which is combined, generates carbon monoxide C18Then O makes to generate carbon monoxide C in the way of thermal desorption18O overflows,
By measuring carbon monoxide C18The content of O is that can determine the content of interface carbon.
In the method for the invention, the time of ion implanting is according to the SiO of formation2Thickness determine, SiO2Thickness get over
Greatly, the time of the ion implanting needed is longer, and in some embodiments of the invention, the ion implanting time is 100-200s, from
Son injection when, need to guarantee the remaining carbon in interface all with inject18O, which is combined, generates carbon monoxide C18O。
In the method for the invention, carbon monoxide C18O desorption carries out under high temperature and low pressure, and vacuum degree is preferably temperature
Preferably 200-300 DEG C.
Due in thermal desorption, remaining in the CO in substrate during Oxidation of SiC, not in conjunction with carbon18O etc. also can
Desorption, therefore in detection carbon monoxide C18It when O, needs to separate gas, utilizes gas phase color in an embodiment of the present invention
Spectrum-mass spectrometer measures carbon monoxide C18The content of O, mass spectrograph therein use isotope-ratio mass spectrometer, it is possible to reduce
Remain in influence of the CO in substrate to measurement result, to reduce evaluated error.
Embodiment 1
During using silicon carbide preparation MOSFET element, one is formed in silicon carbide substrate surface using thermal oxidation method
After layer silica, detected if randomly selecting dry-eye disease；
It is injected using ion implanting into silicon carbide substrates18The time of O isotope, ion implanting is 200s, makes interface
Remaining carbon with18O is combined and is formed carbon monoxide C18O；
Silicon carbide substrates are placed in vacuum chamber, adjusting pressure is 10kPa, is then gradually warmed up, until temperature reaches
200 DEG C, desorption time 20min；
The gas for collecting desorption, by the gas sampling of collection to intestinal bacteria instrument, isotopic ratio
Mass spectrograph can be with the C in gas18O and C16O is detected respectively, to obtain carbon monoxide C in gas18The quality of O；
According to the carbon monoxide C of measurement18The concentration of C can be calculated in the quality of O, then according to the face of silicon carbide substrates
SiC-SiO can be obtained in product2The carbon residual concentration at interface.
Method of the invention can be to SiC-SiO obtained in SiC substrate oxidation technology2Carbon residual in interface is accurately surveyed
Fixed, this method can be applied to SiC-SiO2Interface quality evaluation, when threshold value of the testing result lower than setting, it is believed that sample closes
Lattice, when testing result is higher than the threshold value of setting, it is believed that failed sample.SiC in this way by screening qualified carbon residual concentration
The stability and reliability of product can be improved in substrate.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (6)
1. SiC-SiO in a kind of SiC oxidation2The measuring method of interface carbon residual concentration, comprising:
There is provided one includes SiC-SiO2The silicon carbide substrates at interface, described includes SiC-SiO2The silicon carbide substrates at interface are by SiC
Oxidation obtains；
It is injected using ion implanting into the silicon carbide substrates18O isotope,18O isotope and SiC-SiO2Interface carbon generates one
Carbonoxide C18O；
Heating the silicon carbide substrates makes carbon monoxide C18O desorption；
Collect the carbon monoxide C for being desorbed out18O, and detect its quality；
According to carbon monoxide C18The Mass Calculation SiC-SiO of O2Interface carbon residual concentration.
2. measuring method according to claim 1, wherein the time of the ion implanting is 100-200s.
3. measuring method according to claim 1, wherein carbon monoxide C18O desorption carries out under vacuum..
4. measuring method according to claim 1, wherein carbon monoxide C18The temperature of O desorption is 200-300 DEG C.
5. measuring method according to claim 1, wherein the carbon monoxide C18The quality of O is using gas-chromatography and together
The plain ratio mass spectrograph measurement in position.
6. measuring method described in a kind of any one of claim 1-5 is in SiC-SiO2Interface quality evaluation or SiC oxidation sample sieve
The application chosen.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811349529.9A CN109283298B (en) | 2018-11-13 | 2018-11-13 | SiC-SiO in SiC oxidation2The measuring method and its application of interface carbon residual concentration |
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| CN201811349529.9A CN109283298B (en) | 2018-11-13 | 2018-11-13 | SiC-SiO in SiC oxidation2The measuring method and its application of interface carbon residual concentration |
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| CN109283298B CN109283298B (en) | 2019-07-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894776A (en) * | 2009-05-21 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting nitrogen doped concentration by measuring resistance change |
| CN102706859A (en) * | 2012-06-15 | 2012-10-03 | 武汉钢铁(集团)公司 | Method for determining silica in silicon steel surface oxidation layer |
| CN102760697A (en) * | 2011-04-27 | 2012-10-31 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor device |
| CN103278518A (en) * | 2013-04-28 | 2013-09-04 | 上海宏力半导体制造有限公司 | Detection method for chlorinity in oxide layer |
-
2018
- 2018-11-13 CN CN201811349529.9A patent/CN109283298B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101894776A (en) * | 2009-05-21 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting nitrogen doped concentration by measuring resistance change |
| CN102760697A (en) * | 2011-04-27 | 2012-10-31 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor device |
| CN102706859A (en) * | 2012-06-15 | 2012-10-03 | 武汉钢铁(集团)公司 | Method for determining silica in silicon steel surface oxidation layer |
| CN103278518A (en) * | 2013-04-28 | 2013-09-04 | 上海宏力半导体制造有限公司 | Detection method for chlorinity in oxide layer |
Non-Patent Citations (2)
| Title |
|---|
| SANWU WANG: "Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2", 《PHYSICAL REVIEW LETTERS》 * |
| 王晓琳: "碳化硅MOS器件氧化层界面附近碳存在形式的理论研究进展", 《SMART GRID》 * |
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