CN115692236A - Method for detecting RTA temperature in silicade process - Google Patents
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Abstract
The invention provides a method for detecting RTA temperature in a silicade process, which comprises the following steps: providing a change curve of the front and back resistance difference values of the wafer and the metal alloy at different RTA temperatures; forming an oxide layer and a metal alloy layer on the surface of the wafer, obtaining a resistance difference value before and after RTA treatment of the metal alloy layer, and reversely deducing the RTA temperature through a change curve of the resistance difference value of the metal alloy at different RTA temperatures; and removing the metal alloy layer. The invention can utilize the existing processing machine to carry out detection, does not need to remove a natural oxide layer, omits a processing procedure, and also avoids the influence on the resistance value due to different time in the process of removing the natural oxide and deposited metal in the existing detection method, thereby influencing the precision of temperature detection; the wafer can be reused because the oxide layer is protected and does not participate in the reaction of the process.
Description
Technical Field
The invention relates to a semiconductor integrated circuit technology, in particular to a method for detecting RTA temperature in a Silicide process.
Background
With the continuous development of the integrated circuit process technology, in order to improve the integration level of the integrated circuit, and simultaneously improve the working speed of the device and reduce the power consumption thereof, the feature size of the semiconductor process is continuously reduced, the sizes of the gate, the source and the drain active regions of the transistor are also correspondingly reduced, and the equivalent series resistance of the transistor is correspondingly increased, thereby affecting the speed of the circuit. In order to improve the equivalent series resistance, a metal Silicide (Silicide) process technology is developed in the semiconductor industry.
The Silicide is a metal Silicide, is a compound state formed by the physical-chemical reaction of metal and silicon, has the conductive characteristic between the metal and the silicon, and the Polycide process and the Salicide process respectively refer to the process flow of forming the Silicide facing different structures of the transistor. The first metal silicide process technology is the Polycide process technology, which aims to improve the equivalent series resistance of the polysilicon gate and the contact resistance of the contact hole. The Salicide process technology has been developed in order to improve the equivalent series resistance of the source and drain active regions of the transistor and the contact resistance of the contact hole, and not only forms a metal silicide on the polysilicon gate but also forms a metal silicide on the source and drain active regions, which improves the equivalent series resistance of the gate, source and drain active regions of the transistor and the contact resistance of the contact hole at the same time.
The Rapid Thermal Annealing (RTA) temperature in the Silicide process is the most critical parameter, how to detect whether the temperature is in the required interval becomes the key for keeping the process stable, the existing temperature detection is the product flow, and a brand new wafer (wafer) is used for detection to avoid the influence of the wafer on the detection, but after the detection is finished, the wafer can be scrapped because the metal is deposited in the Silicide process and cannot be reused, and the cost is high.
In view of the above, there is a need to provide a method for detecting RTA temperature in a Silicide process, which is used to solve the problems in the prior art that RTA temperature parameters cannot be effectively detected in the Silicide process and test wafers are wasted.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for detecting RTA temperature in a Silicide process, which is used to solve the problems of the prior art that RTA temperature parameters are effectively detected in the Silicide process and test wafers are wasted.
To achieve the above and other related objects, the present invention provides a method for detecting RTA temperature in a Silicide process, comprising:
s11: providing a change curve of the front and back resistance difference values of the wafer and the metal alloy at different RTA temperatures;
s12: forming an oxide layer on the surface of the wafer;
s13: forming a metal combination layer on the surface of the oxide layer, wherein the metal combination layer sequentially comprises a first metal layer and a second metal layer, and measuring the resistance value of the metal combination layer;
s14: performing RTA treatment on the metal combination layer, forming a metal alloy layer on the metal combination layer, and measuring the resistance value of the metal alloy layer;
s15: obtaining a resistance difference value of the resistance value of the metal alloy layer and the resistance value of the metal combination layer, and reversely deducing the RTA temperature through a change curve of the resistance difference value of the metal alloy at different RTA temperatures;
s16: and removing the metal alloy layer.
Optionally, the change curve of the resistance difference of the metal alloy at different RTA temperatures comprises a change curve of the resistance difference of a NiTi alloy at different RTA temperatures, the first metal layer comprises a Ni layer, the second metal layer comprises a Ti layer, and the metal alloy layer comprises a NiTi alloy.
Optionally, the method for obtaining the variation curve of the resistance difference value of the NiTi alloy before and after at different RTA temperatures includes:
s21: providing preset groups of metal combination layers with the same conditions, wherein the metal combination layers sequentially comprise a Ni layer and a Ti layer, and measuring the resistance value of the metal combination layers;
s22: performing RTA treatment on a group of metal combination layers at every other preset temperature from 300 ℃ to 450 ℃ to form a NiTi alloy layer, and measuring the resistance value of the NiTi alloy layer;
s23: and obtaining the resistance difference value of the resistance value of each group of the NiTi alloy layer and the resistance value of the metal combination layer, and forming a resistance difference value change curve of the NiTi alloy at different RTA temperatures with the RTA temperature corresponding to each group.
Optionally, the Ni layer has a thickness in a range of 200-500A; the thickness range of the Ti layer is 200-500A.
Optionally, the RTA temperature ranges from 300 ℃ to 450 ℃.
Optionally, steps S13 to S16 may be repeated to obtain different RTA temperatures.
Optionally, in step S12, the thickness of the oxide layer ranges from 2 μm to 5 μm.
Optionally, in step S13, the forming method of the metal combination layer is one of a chemical vapor deposition method, a sputtering method, or a plating filling method.
Optionally, in step S14, the RTA is one or a combination of isothermal annealing and spike annealing.
Optionally, in step S15, a method for reversely deducing the RTA temperature through the variation curve of the resistance difference value of the metal alloy at different RTA temperatures is an interpolation method.
As described above, the method for detecting the RTA temperature in the silica process of the present invention has the following beneficial effects: according to the invention, when the metal combination layer is deposited on the oxide layer of the wafer, the existing metal deposition process machine can be used for deposition, no additional equipment is needed, a metal alloy layer is formed through RTA treatment, and the RTA temperature is directly detected through the change of the front resistance value and the rear resistance value under a certain RTA condition; after the RTA temperature is detected, the metal alloy layer can be removed through an existing processing machine for removing non-reactive metal, no additional equipment is provided, the wafer is protected by an oxide layer, the metal alloy layer cannot be influenced when the wafer is removed, and the wafer can be reused instead of being scrapped after being used once because the wafer does not participate in the reaction of the Silicide process; the detection method of the invention does not need to remove the natural oxide layer in the existing detection method, saves a process procedure, and also avoids the influence on the resistance value due to different time in the process of removing the natural oxide and the deposited metal in the existing detection method, thereby influencing the precision of temperature detection.
Drawings
Fig. 1 is a schematic diagram illustrating a RTA temperature detection process in the prior art.
FIG. 2 is a graph showing the relationship between the reversible strain capacity of the NiTi alloy and the RTA temperature.
FIG. 3 is a flow chart of the method for detecting RTA temperature in the Silicide process according to the present invention.
FIG. 4 is a schematic flow chart of the method for obtaining the variation curve of the resistance difference between the NiTi alloy and the alloy at different RTA temperatures.
FIG. 5 is a schematic diagram showing the variation curve of the resistance difference between the NiTi alloy of the present invention and the alloy at 400-420 ℃ RTA temperature.
Description of the element reference numerals
R s1 The resistance value of the metal composite layer; r is s2 Resistance value of the NiTi alloy layer; delta R s The resistance difference value of the resistance value of the NiTi alloy layer and the resistance value of the metal combination layer; t, RTA temperature.
Detailed Description
The following embodiments of the present invention are provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
As in the detailed description of the embodiments of the present invention, the cross-sectional views illustrating the device structure are not partially enlarged in general scale for convenience of illustration, and the schematic views are only examples, which should not limit the scope of the present invention.
For convenience in description, spatial relational terms such as "below," "beneath," "below," "under," "over," "upper," and the like may be used herein to describe one structure or feature's relationship to another structure or feature as illustrated in the figures. It will be understood that these terms of spatial relationship are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. As used herein, "between 8230 \ 8230;" between "means both end points are included.
In the context of this application, a structure described as having a first feature "on" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed in between the first and second features, such that the first and second features may not be in direct contact.
Please refer to fig. 1 to 5. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
The Silicide process technology is to add the relevant process steps of Metal Silicide on the basis of the standard Complementary Metal Oxide Semiconductor (CMOS) process technology, and the Silicide process steps are carried out after the implantation of source and drain ions. The Ni Silicide process is widely applied to a 65 nm-28 nm chip preparation process, and the basic process steps for forming the Ni Silicide comprise the following five steps: (1) the method comprises the steps of performing pretreatment, namely Pre-silicide cleaning (Pre-silicide cleaning) on the surface of a silicon substrate, wherein the natural Oxide Layer (Native Oxide Layer) formed on a polysilicon gate and an active region on the surface of the silicon substrate in the process of process transmission is mainly removed; (2) the metal is deposited by physical vapor deposition (Phy)PVD) depositing a layer of metal on the polysilicon gate, source and drain active regions, the deposited metal including NiPt, ti and Co; (3) performing RTA treatment for the first time to enable deposited metal to react with silicon in a polysilicon gate, a source and a drain active region below; (4) carrying out selective wet etching treatment by a processing machine for removing non-reactive metal to remove unreacted metal; (5) performing RTA treatment for the second time to form metal silicide including NiSi on the polysilicon gate, source and drain active regions 2 、TiSi 2 、CoSi 2 And NiPtSi.
It should be noted here that the deposited NiPt metal can be directly regarded as Ni metal, because Ni metal is easy to diffuse, and in the Ni Silicide process, the addition of Pt with a certain content can prevent Ni from diffusing to the silicon substrate before RTA treatment.
The conventional RTA temperature detection refers to the above process, and is performed by a brand new wafer to avoid the influence of the wafer itself on the detection, as shown in fig. 1, the detection process includes:
providing a brand new wafer; removing natural oxide on the wafer; depositing a metal combination layer on the wafer, wherein the metal combination layer sequentially comprises a NiPt layer and a TiN layer; measuring the resistance value of the metal combination layer; performing RTA treatment on the metal combination layer to form NiSi 2 (ii) a Measurement of NiSi 2 The resistance value of (2); detecting the RTA temperature through the change of the resistance values of the previous and the next two times; and the wafer is scrapped.
The research shows that after the detection is finished, the wafer is scrapped because the Ni Silicide process cannot be recycled, and the cost is high.
Based on the above findings and research and analysis, the inventors propose a method for detecting the RTA temperature in the Silicide process, which includes:
s11: providing a change curve of the front and back resistance difference values of the wafer and the metal alloy at different RTA temperatures;
s12: forming an oxide layer on the surface of the wafer;
s13: forming a metal combination layer on the surface of the oxide layer, wherein the metal combination layer sequentially comprises a first metal layer and a second metal layer, and measuring the resistance value of the metal combination layer;
s14: performing RTA treatment on the metal combination layer, forming a metal alloy layer on the metal combination layer, and measuring the resistance value of the metal alloy layer;
s15: obtaining a resistance difference value of the resistance value of the metal alloy layer and the resistance value of the metal combination layer, and reversely deducing the RTA temperature through a variation curve of the resistance difference value of the metal alloy at different RTA temperatures;
s16: and removing the metal alloy layer.
And repeating the steps S13 to S16 to obtain different RTA temperatures.
In this embodiment, when depositing the metal combination layer on the oxide layer of the wafer, an existing metal deposition process machine can be used for deposition, no additional equipment is required, a metal alloy layer is formed through RTA treatment, and the temperature of RTA is directly detected through the change of the front and rear resistance values under a certain RTA condition; in this embodiment, after the RTA temperature is detected, the metal alloy layer may be removed by using an existing processing machine for removing non-reactive metal, and no additional equipment is provided, because the wafer is protected by an oxide layer, the removal of the metal alloy layer does not affect the wafer, and because the wafer does not participate in the reaction of the Silicide process, the wafer may be reused, and is not discarded after being used once; the detection method of the embodiment does not need to remove the natural oxide layer in the existing detection method, saves a process procedure, and also avoids the influence on the resistance value due to different time in the process of removing the natural oxide and depositing metal in the existing detection method, thereby influencing the temperature detection precision.
As an example, the curves of the metal alloy for the difference in resistance at different RTA temperatures include curves of the NiTi alloy for the difference in resistance at different RTA temperatures, the first metal layer includes a Ni layer, the second metal layer includes a Ti layer, and the metal alloy layer includes a NiTi alloy.
NiTi alloy has good shape memory property, and can spontaneously generate shape change when being thermally cycled, so that the NiTi alloy has development application on a plurality of temperature control devices. As shown in FIG. 2, the relationship between the two-way reversible strain amount measured when the NiTi alloy sample is subjected to RTA treatment at different temperatures and the bending deformation is 8% and the RTA temperature is shown. When the RTA temperature is lower than 450 ℃, the two-way reversible strain capacity uniformly rises along with the rise of the RTA temperature, and the linear relation is good. The influence of the RTA temperature on the two-way memory effect of the NiTi alloy is related to the distribution of dislocation in a parent phase and different parent phase strengths after the cold-rolled deformation sample is subjected to RTA treatment at different temperatures, and the resistivity of the NiTi alloy is influenced at the same time. By utilizing the characteristic, the embodiment determines the RTA temperature by reverse estimation by utilizing the variation curve of the resistance difference value of the NiTi alloy before and after different RTA temperatures in the range of 300-450 ℃.
Based on the metal characteristics of the NiTi alloy, as shown in fig. 3, the method for detecting the RTA temperature in the silica process includes:
s31: providing a change curve of the front and back resistance difference values of the wafer and the NiTi alloy at different RTA temperatures;
s32: forming an oxide layer on the surface of the wafer;
s33: forming a metal combination layer on the surface of the oxidation layer, wherein the metal combination layer sequentially comprises a Ni layer and a Ti layer, and measuring the resistance value of the metal combination layer;
s34: performing RTA treatment on the metal combination layer, forming a NiTi alloy layer on the metal combination layer, and measuring the resistance value of the NiTi alloy layer;
s35: obtaining a resistance difference value of the resistance value of the NiTi alloy layer and the resistance value of the metal combination layer, and reversely deducing the RTA temperature through a change curve of the resistance difference value of the NiTi alloy at different RTA temperatures;
s36: and removing the NiTi alloy layer.
This embodiment will be further described below.
As an example, step S31 is performed first, and a variation curve of the difference between the front and rear resistances of the wafer and the NiTi alloy at different RTA temperatures is provided.
Because the wafer does not participate in the reaction of the Silicide process, the wafer can be a brand-new wafer or an old wafer which is repeatedly used for many times, the selection of the old wafer can reduce the cost of the temperature detection method, and the selection of the specific wafer can be performed according to the actual situation, and is not limited herein.
As shown in fig. 4, as an example, the method for obtaining the variation curve of the resistance difference value of the NiTi alloy at different RTA temperatures includes:
s21: providing preset groups of metal combination layers with the same conditions, wherein the metal combination layers sequentially comprise a Ni layer and a Ti layer, and measuring the resistance value R of the metal combination layers s1 ；
S22: performing RTA treatment on a group of metal combination layers at every other preset temperature from 300 ℃ to 450 ℃ to form a NiTi alloy layer, and measuring the resistance value R of the NiTi alloy layer s2 ；
S23: obtaining the resistance value R of each group of the NiTi alloy layers s2 Resistance value R of the metal combination layer s1 And forming a variation curve of the resistance difference value of the NiTi alloy at different RTA temperatures with the RTA temperature corresponding to each group.
In step S21, the conditions set by the metal combination layer as an invariant must be the same, in this embodiment the thickness range of the Ni layer in the metal combination layer is 200 a-500, including end point values at both ends, for example 200 a 0, 250 a 1, 300 a 2, 350 a 3, 400 a 4, 450 a 5, 500 a 6, the thickness range of the Ti layer being 200 a 7-500 a, including end point values at both ends, for example 200 a, 250 a, 300 a, 350 a, 400 a, 450 a, 500 a, the thickness of the Ni layer and the Ti layer being selected specifically as needed, as long as the setting conditions of the metal combination layer are the same. Measuring the resistance R of the metal combination layer s1 The method of (2) is not limited, but it is required to ensure that the methods and conditions for measuring the resistance value of each group of metal combination layers are the same, so as to avoid measurement errors caused by different measurement methods.
It should be noted that the preset number of the metal combination layers may be as large as possible, and the larger the number collected in the previous period is, the more beneficial the later period is to reverse the different RTA temperatures.
In step S22, the preset temperature is at least greater than 1 ℃, and the specific size of the preset temperature may be selected according to actual needs, which is not limited herein. Preferably, in this embodiment, the RTA treatment is performed on a group of the metal combination layers at intervals of 10 ℃ from 300 ℃ to 450 ℃ to form a NiTi alloy layer, and the resistance R of the NiTi alloy layer is measured s2 。
In step S23, the resistance value R of each set of the NiTi alloy layer is obtained s2 Resistance value R of the metal combination layer s1 Resistance difference value DeltaR of s And forming an array of corresponding relations with the RTA temperature corresponding to each group: { [300,. DELTA.R) s1 ]，[310，△R s1 ]…[T n ，△R sn ]…[450，△R s45 ]And establishing a corresponding linear function relationship diagram, and finally obtaining a change curve of the resistance difference value of the nickel-titanium alloy at different RTA temperatures, as shown in FIG. 5, and intercepting the change curve between 400 ℃ and 420 ℃.
As an example, step S32 is performed to form an oxide layer on the surface of the wafer.
By way of example, the oxide layer has a thickness in a range of 2 μm to 5 μm, inclusive, e.g., 2 μm, 3 μm, 4 μm, 5 μm. The oxide layer may be a native oxide layer within a predetermined thickness range or a reformed oxide layer, and the oxide layer may be SiO 2 Of course, the oxide layer includes but is not limited to SiO 2 The main function of the method is to separate the wafer from the metal composite layer formed in the subsequent process, so as to avoid reaction during RTA treatment, and to ensure that the NiTi alloy is easy to remove after the resistance value of the NiTi alloy is measured.
As an example, step S33 is performed to form a metal combination layer on the surface of the oxide layer, where the metal combination layer includes a Ni layer and a Ti layer in sequence, and measure a resistance R of the metal combination layer s1 。
In this embodiment, the thickness range of the nickel layer in the metal composite layer is 200-500, including end point values at both ends, for example, 200 a, 250 a, 300 a, 350 a, 400 a, 450 a, 500 a, the thickness range of the titanium layer being 200 a-500 a, the end point values at both ends including, for example, 200 a, 250 a, 300 a, 350 a, 400 a, 450 a, 500 a, the selection of the thickness of the Ni layer and the Ti layer may be selected according to actual needs, without limitation thereto.
Preferably, the resistance value R of the metal combination layer is measured s1 The method is as consistent as possible with the measuring method and conditions when the variation curve of the resistance difference value of the NiTi alloy at different RTA temperatures is obtained, and data errors caused by different measuring methods are avoided.
The forming method of forming the metal combination layer is one of a chemical vapor deposition method, a sputtering method or an electroplating filling method, and can be selected according to actual needs, which is not limited herein. The present embodiment is preferably a chemical vapor deposition method, and it should be noted that the metal combination layer may be deposited by using an existing processing tool for depositing metal without providing additional equipment.
As an example, step S34 is followed to perform RTA treatment on the NiTi composite layer, form the NiTi composite layer into a NiTi alloy layer, and measure the resistance value R of the NiTi alloy layer s2 。
By way of example, the RTA is one or a combination of isothermal annealing and spike annealing. The specific treatment process method of the RTA can be selected according to actual needs, and is not limited herein, but the NiTi alloy layer after the RTA treatment can be ensured to conform to linear shape memory characteristics only if the temperature range is ensured to be within 300-450 ℃.
As an example, step S35 is followed to obtain the resistance value R of the NiTi alloy layer s2 Resistance value R of the metal combination layer s1 Resistance difference value DeltaR of s And reversely deducing the RT according to the variation curve of the resistance difference value of the NiTi alloy at different RTA temperaturesAnd (A) temperature.
It should be noted that the metal combination layer is a precursor of the NiTi alloy layer, and the resistance value Δ R of the metal combination layer s1 Namely the resistance value before RTA treatment of the NiTi alloy layer, and the resistance value Delta R of the NiTi alloy layer s2 Namely the resistance value after RTA treatment of the NiTi alloy layer. Obtaining the resistance value R of the NiTi alloy layer s2 With resistance value R of said metal combination layer s1 Difference in resistance of (Δ R) s That is, the difference value DeltaR between the resistance of the NiTi alloy layer after RTA treatment and the resistance of the NiTi alloy layer before RTA treatment s 。
As an example, the method for reversely deducing the RTA temperature through the change curve of the resistance difference value of the NiTi alloy at different RTA temperatures is an interpolation method.
If the obtained resistance difference value Delta R between the NiTi alloy layer after RTA treatment and before RTA treatment s n The actual RTA temperature T of the RTA can be directly obtained from the existing numerical value in the variation curve of the resistance difference value of the NiTi alloy at different RTA temperatures n (ii) a If the obtained resistance difference value Delta R between the NiTi alloy layer after RTA treatment and before RTA treatment s n Between Δ R s i And Δ R s i+1 Δ R s i And Δ R s i+1 Are numerical values between the arrays, and the corresponding RTA temperatures are respectively T i And T i+1 By formula in said linear functional relationship by interpolation
Obtaining an actual temperature T of the RTA n 。
As an example, step S36 is finally performed to remove the NiTi alloy layer.
In this embodiment, after the RTA temperature is detected, the NiTi alloy layer may be removed by using an existing processing machine for removing non-reactive metal, and no additional equipment is provided, so that the removal of the NiTi alloy layer does not affect the wafer due to the protection of the oxide layer on the wafer, and the wafer may be reused instead of being discarded after being used once because the wafer does not participate in the reaction of the Silicide process.
As an example, steps S33 to S36 may be repeated to obtain different RTA temperatures.
And under the condition that the wafer is not damaged and can be repeatedly used, the metal combination layer can be formed on the oxide layer for multiple times, RTA treatment at different temperatures is carried out, and the specific temperature of the RTA is detected.
In summary, the present invention provides a method for detecting an RTA temperature in a Silicide process, where the method for detecting an RTA temperature in a Silicide process includes: s11: providing a change curve of the front and back resistance difference values of the wafer and the metal alloy at different RTA temperatures; s12: forming an oxide layer on the surface of the wafer; s13: forming a metal combination layer on the surface of the oxidation layer, wherein the metal combination layer sequentially comprises a first metal layer and a second metal layer, and measuring the resistance value of the metal combination layer; s14: performing RTA treatment on the metal combination layer, forming a metal alloy layer on the metal combination layer, and measuring the resistance value of the metal alloy layer; s15: obtaining a resistance difference value of the resistance value of the metal alloy layer and the resistance value of the metal combination layer, and reversely deducing the RTA temperature through a change curve of the resistance difference value of the metal alloy at different RTA temperatures; s16: and removing the metal alloy layer. When the metal combination layer is deposited on the oxide layer of the wafer, the existing metal deposition processing machine can be used for deposition, no additional equipment is needed, a metal alloy layer is formed through RTA treatment, and the RTA temperature is directly detected through the change of the front resistance value and the rear resistance value under a certain RTA condition; after the RTA temperature is detected, the metal alloy layer can be removed through an existing processing machine for removing non-reactive metal, no additional equipment is provided, the wafer is protected by an oxide layer, the metal alloy layer cannot be influenced when the wafer is removed, and the wafer can be reused instead of being scrapped after being used once because the wafer does not participate in the reaction of the Silicide process; the detection method of the invention does not need to remove the natural oxide layer in the existing detection method, saves a process procedure, and also avoids the influence on the resistance value due to different time in the process of removing the natural oxide and the deposited metal in the existing detection method, thereby influencing the precision of temperature detection. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A method for detecting RTA temperature in a Silicide process is characterized by comprising the following steps:
s11: providing a change curve of the front and back resistance difference values of the wafer and the metal alloy at different RTA temperatures;
s12: forming an oxide layer on the surface of the wafer;
s13: forming a metal combination layer on the surface of the oxide layer, wherein the metal combination layer sequentially comprises a first metal layer and a second metal layer, and measuring the resistance value of the metal combination layer;
s14: performing RTA treatment on the metal combination layer, forming a metal alloy layer on the metal combination layer, and measuring the resistance value of the metal alloy layer;
s15: obtaining a resistance difference value of the resistance value of the metal alloy layer and the resistance value of the metal combination layer, and reversely deducing the RTA temperature through a variation curve of the resistance difference value of the metal alloy at different RTA temperatures;
s16: and removing the metal alloy layer.
2. The method for detecting the RTA temperature in the silicade process according to claim 1, wherein the method comprises the following steps: the change curve of the resistance difference value of the metal alloy at different RTA temperatures comprises the change curve of the resistance difference value of the NiTi alloy at different RTA temperatures, the first metal layer comprises a Ni layer, the second metal layer comprises a Ti layer, and the metal alloy layer comprises the NiTi alloy.
3. The method for detecting the RTA temperature in the Silicide process as claimed in claim 2, wherein the method for obtaining the variation curve of the resistance difference value of the NiTi alloy before and after the NiTi alloy is subjected to different RTA temperatures comprises the following steps:
s21: providing preset groups of metal combination layers with the same condition, wherein the metal combination layers sequentially comprise a Ni layer and a Ti layer, and measuring the resistance value of the metal combination layers;
s22: performing RTA treatment on a group of metal combination layers at every other preset temperature from 300 ℃ to 450 ℃ to form a NiTi alloy layer, and measuring the resistance value of the NiTi alloy layer;
s23: and obtaining the resistance difference value of the resistance value of each group of the NiTi alloy layer and the resistance value of the metal combination layer, and forming a resistance difference value change curve of the NiTi alloy at different RTA temperatures with the RTA temperature corresponding to each group.
4. The method for detecting the RTA temperature in the silicade process as claimed in claim 2, wherein the method comprises the following steps: the thickness range of the Ni layer is 200-500A; the thickness range of the Ti layer is 200-500A.
5. The method for detecting the RTA temperature in the Silicide process as claimed in claim 2, wherein: the range of the RTA temperature is 300-450 ℃.
6. The method for detecting the RTA temperature in the silicade process according to claim 1, wherein the method comprises the following steps: and repeating the steps S13 to S16 to obtain different RTA temperatures.
7. The method for detecting the RTA temperature in the silicade process according to claim 1, wherein the method comprises the following steps: in step S12, the thickness of the oxide layer is in a range of 2 μm to 5 μm.
8. The method for detecting the RTA temperature in the silicade process according to claim 1, wherein the method comprises the following steps: in step S13, the metal combination layer is formed by one of a chemical vapor deposition method, a sputtering method, or an electroplating filling method.
9. The method for detecting the RTA temperature in the silicade process according to claim 1, wherein the method comprises the following steps: in step S14, the RTA is one or a combination of isothermal annealing and spike annealing.
10. The method for detecting the RTA temperature in the silicade process according to claim 1, wherein the method comprises the following steps: in step S15, a method for reversely deducing the RTA temperature through a variation curve of the resistance difference value of the metal alloy at different RTA temperatures is an interpolation method.
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