200926326 九、發明說明： 【發明所屬之技術領域】 本發明—般是關於利用電漿或高能離子的 八體而s是關於使用二維 1且更 蝕刻的基板上產生均在進订離子束輔助 圖案。土板上產生均勾圖案和/或所希望的非均句的餘刻 【先前技術】 ❹ Ο =較於習知電賴刻工具所提供的_ ;，統通常能夠在諸如半導體晶圓的基板上= =刻。然而’此類離子束崎、統仍容易 程中固有之非均勻度的影響，並因此·美板的 J光益例如，諸如在其中對基板進行侧的真空S的壓 晶圓的溫度等變量的變化能夠不利地二 味益、度。非均句的㈣通常會從基板中心至其邊緣產 生…、法接文的變化。此變化可在基 贵 性能中表現出來。 讀上衣備之7L件的電氣 刻亂系統的另—不足之處在於在基板上钱 S案:Γ傳統的離子束侧系統難以調整 產生這種非均勻的侧圖案，無論圖 化將還7^稱的。而且’所希望之钱刻圖案的變 匕影響基板上製備的元件的電氣性能。例如，如 果所布立的姓刻圖案是用以固定先前處理步驟產生的已知 5 200926326 =均勻度’那麼所希望_刻圖案的 非均勻度）都將不利地影響元件。 Μ(即使疋 •二離:核刻系統無法在提供基板上的均勻 Π::;有期間局部控制離子丄= “二統的離子細系統僅能夠改變不 ❿ 觀變量（例如，真^室内的壓力、 二些變量的改變無助於獲得均勻的曝光以及 有二因爲這些傳統的離子束_系統中不具 變量發生局部變化的能力，進行離子 性能i表:出反來非均勻度足以在基板上製備的元件的電氣 【發明内容】 ，太ΐ “貝t例中’提供了一種離子束姓刻基板的方法。 2貫施例中，此方法包括：檢索㈣ieving)包含植入劑 =減刻率之間相互關係的離子植入劑量佈圖（map); 〇 冑付包含基板_子純_所使狀⑽束參數值的配 :(recipe);將離子束導引至基板表面；根據離子植入劑 里佈圖以及配方中的離子束參數值以利用離子束來侧表 面；以及根據離子植入劑量佈圖以及離子束參數值來控制 表面的姓刻。 在第二實施财’提供了儲存電腦指令的電腦可讀 介’在由賴純運㈣齡賴子紐㈣統能夠 控制基板的餘刻。在本實施例中，電腦指令包括：檢索包 200926326 含植入劑量率與蝕刻率之間 圖；獲得包含基板的離子束餘刻使佈 =及將離子束導引至基板的表面: ^圖以及配方中的離子束參數值以利用離子束來姓= 表面錄子植人姆佈圖以及離子束參數值來控制 ^在第三實施例中’提供了—種離子束餘刻系統 貝施例中’離子束侧系統包括終柄，其配置成接 =離子束_的基板。離子束源配置成將離 ^ 及基板上，間基板騎㈣。控制器配確 保離子束源提供均勻的基板似彳。控制器配置成確保離子 束源利用離子束來侧表面，其中控制器包括—種包含植 入，量率與侧率之間相互關係的離子植人劑量佈圖。控 制器進一步配置成根據離子植入劑量佈圖來導引離子束以 蝕刻基板的表面。 Ο 【實施方式】 圖1顯示了根據本發明一實施例的離子束姓刻系統 1〇〇的示意性方塊圖。離子束蝕刻系統100包括離子束產 生器102、終端站104以及控制器106。離子束產生器1〇2 產生離子束108並朝基板11〇的前表面而導引該離子束 108。透過離子束移動、基板移動或其組合，將離子束1〇8 分佈於基板110的前表面上。 離子束產生器102可包括各種類型的構件以及系統， 以產生具有所希望特性的離子束108。離子束108可以是 7 200926326 點狀束或帶狀束。點狀束可呈 -實例中可近似爲圓形。在二實的横截面形狀，在 用掃描儀的固定或靜止的勢狀束。=’點狀束可為不使 =:描以提供掃描離;束。帶=== 與=二=⑽可:ί 子束。 如用以植入基板110的高能離 ❹ ❹ 芙板終在離子束⑽㈣徑中域—個或多個 S板m η種的離子植人到基板11G和/或用以餃 鉗工去的反姑，可由壓盤112支撑並透過諸如靜電晶圓 =的白知技術而钳夾於壓盤112上。基板ιι〇可罝有 2物理形狀，例如常見的碟形。基板⑽可以是諸如半 ¥晶圓的工件，其由任何類型的半導體材料製成，例如 石夕或要使祕子束⑽來進行植场/祕_任何 材料。 /' 終端站104可以包括驅動系統（未圖示），其將基板 Π0從等候區（holding area)物理地移到壓盤112或移離 壓盤112。終端站104還可以包括驅動機構114，其以所希 望的方式驅動壓盤112並因而驅動基板11〇。驅動機構114 可以包括伺服驅動馬達（servo drive motor)、螺杆驅動機 構（screw drive mechanism)、機械連杆（mechanicaUinkage) 以及任何本領域習知的其它構件，以在將基板11〇鉗夾至 壓盤112時驅動基板110。 8 200926326 終端站104還可包括位置感測器116，其可進一步耦 ^區動機構114 ’以提供代表基板iiq與離子束⑽的 二::丨Γ置的感測器訊號。儘管繪示成單獨的構件，但位置 116可以是諸如驅動機構114白勺其它系統的部件。 沾办’位置感測器116可以是本領域習知的任何類型 ，感測器，諸如位置編碼襄置（position_encoding :ee。來自位置感測器116的位置訊號提供至器 作署^端I!1Q4還可以包括各種射束制器，以感測各種 束的射束電流密度(beamc_ntde—)， 測之射束感測器118及基板下游之射束感 游，，是以離子束的 ❹ ㈣118'12G可以包含多個諸如法拉第杯 上感測射輕騎度分佈。射 US動並按需置放置於射束線(―）中。 藝者應認朗，離子束_系統 上游可=未圖示的附加構件。例如，基板m的 自離子:產生=:離==)，其接收來 子;分析磁鐵，其在從離子束產生;擷取正離 加速之後接收離子束並從離子束中過濟 :且進灯 量狹缝，其進-步限制離子束的物種選擇；靜電 9 200926326 士離子束進行义形並聚焦；以及減速級，以控制離子束的 ^量:在終端站104内，可設置量測各自參數的其它感測 裔，諸如射束角度感測器（beam angle sensor)、充電感測 器（charging sens〇r )、晶圓位置感測器、晶圓溫度感測器， 局部氣體壓力感測器、殘留氣體分析器（residual娜 福洲’ RGA)、光學發射光譜儀（optical emission spectroscopy ’ 〇ES )、諸如飛行時間（time 〇f 也幽，T〇F ) ❹200926326 IX. INSTRUCTIONS: [Technical Field of the Invention] The present invention generally relates to the use of plasma or high energy ions of the eight bodies and s is related to the use of two-dimensional ones and more etched substrates to produce a uniform ion beam assisted pattern. Residues of a uniform hook pattern and/or a desired non-uniform sentence on the earth plate [Prior Art] ❹ Ο = Compared with the conventional lithography tool, the system can usually be used on a substrate such as a semiconductor wafer. Top = = engraved. However, such an ion beam is still susceptible to the inhomogeneity inherent in the process, and therefore, for example, the temperature of the wafer, such as the temperature of the wafer in which the substrate is subjected to the vacuum S, is variable. The change can be unfavorable for the two benefits. The (4) of the non-uniform sentence usually produces changes from the center of the substrate to its edge. This change can be seen in the basic performance. Another disadvantage of reading the 7L piece of electrical engraving system is the money S case on the substrate: Γ The traditional ion beam side system is difficult to adjust to produce this non-uniform side pattern, no matter the figure will be 7^ Said. Moreover, the variation of the desired pattern of engraving affects the electrical properties of the components fabricated on the substrate. For example, if the surname pattern is set to fix the known 5 200926326 = uniformity produced by the previous processing steps, then the non-uniformity of the desired pattern will adversely affect the component. Μ (Even 疋•二离: The nuclear engraving system cannot provide uniform Π on the substrate::; There is a period of local control of the ion 丄 = “The second ionic fine system can only change the non-observable variables (for example, true ^ indoor Pressure, two changes in the variables do not help to obtain a uniform exposure and there are two because of the ability of these conventional ion beam systems to have local variations without variables, the ion performance i table: the non-uniformity is sufficient on the substrate The electrical content of the prepared component, the content of the invention, "Bei t" provides a method of ion beam surname substrate. 2 In the example, the method includes: retrieval (four) ieving) containing implant = reduction rate Ion implantation dose map of the relationship; 〇胄 包含 包含 包含 包含 包含 子 ( ( ( ( ( ( ( ( ( 10 10 10 10 10 10 10 10 10 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; The ion beam parameter values in the immersion pattern and the formulation are used to utilize the ion beam to the side surface; and the surface surname is controlled according to the ion implantation dose layout and the ion beam parameter values. The second implementation provides storage. Computer The computer-readable medium 'in the case of the substrate can be controlled by Lai Chunyun (four) Ling Lai Niu (4). In this embodiment, the computer instruction includes: the retrieval package 200926326 contains a map between the implantation dose rate and the etching rate; The ion beam of the substrate is left to make the cloth = and direct the ion beam to the surface of the substrate: ^ Figure and ion beam parameter values in the recipe to use the ion beam to surname = surface recording implant map and ion beam parameter values In the third embodiment, the 'ion beam side system' includes a final shank, which is configured to be connected to the substrate of the ion beam _. The ion beam source is configured to be separated. ^ and on the substrate, the inter-substrate ride (four). The controller is equipped to ensure that the ion beam source provides a uniform substrate-like enthalpy. The controller is configured to ensure that the ion beam source utilizes the ion beam to the side surface, wherein the controller includes an implant, the amount The ion implant dose layout of the relationship between the rate and the side rate. The controller is further configured to guide the ion beam to etch the surface of the substrate according to the ion implantation dose pattern. Ο [Embodiment] FIG. 1 shows the root A schematic block diagram of an ion beam surrogate system 1A according to an embodiment of the present invention. The ion beam etching system 100 includes an ion beam generator 102, a terminal station 104, and a controller 106. The ion beam generator 1〇2 generates an ion beam The ion beam 108 is directed toward the front surface of the substrate 11A. The ion beam 1〇8 is distributed over the front surface of the substrate 110 by ion beam movement, substrate movement, or a combination thereof. The ion beam generator 102 can include Various types of components and systems are used to generate an ion beam 108 having the desired characteristics. The ion beam 108 can be a 7 200926326 point beam or a ribbon beam. The point beam can be - in the example, can be approximated as a circle. The cross-sectional shape is in the fixed or stationary potential beam with the scanner. = 'The spot beam can be made without the =: trace to provide scanning away; With === and ===(10) can be: ί sub bundle. For example, the high-energy ion raft plate for implanting the substrate 110 is finally implanted in the ion beam (10) (four) diameter domain - one or more S-plate m η ions implanted into the substrate 11G and/or used to dump the fitter , can be supported by the platen 112 and clamped to the platen 112 by a white known technique such as electrostatic wafer=. The substrate ι can have 2 physical shapes, such as a common dish shape. The substrate (10) may be a workpiece such as a half wafer, which is made of any type of semiconductor material, such as Shi Xi or the scorpion bundle (10) for planting/secreting. The terminal station 104 may include a drive system (not shown) that physically moves the substrate Π0 from the holding area to the platen 112 or away from the platen 112. The terminal station 104 can also include a drive mechanism 114 that drives the platen 112 and thus the substrate 11 in a desired manner. The drive mechanism 114 can include a servo drive motor, a screw drive mechanism, a mechanical linkage (mechanica), and any other components known in the art to clamp the substrate 11 to the platen The substrate 110 is driven at 112 o'clock. 8 200926326 The terminal station 104 can also include a position sensor 116 that can be further coupled to the zone mechanism 114' to provide a sensor signal representative of the substrate iiq and the ion beam (10). Although depicted as a separate component, location 116 can be a component of other systems, such as drive mechanism 114. The location sensor 116 can be of any type known in the art, such as a position encoding device (position_encoding: ee. The position signal from the position sensor 116 is provided to the device. 1Q4 may also include various beam makers to sense the beam current density of various beams (beamc_ntde-), the beam sensor 118 and the beam sensing downstream of the substrate, which is the ion beam (four) 118 '12G can contain multiple sensitivities such as the Faraday cup. The US is placed and placed on the beam line (-) as needed. The artist should recognize the ion beam _ system upstream = not shown An additional component. For example, the self-ion of the substrate m: produces =: from ==), which receives the emitter; the analysis magnet, which is generated from the ion beam; receives the ion beam after the positive acceleration and passes through the ion beam Ji: and enter the lamp slit, which further restricts the ion beam species selection; electrostatic 9 200926326 ion beam to shape and focus; and deceleration level to control the ion beam amount: in the terminal station 104, Other sensing people, such as beams, that measure their respective parameters can be set Beam angle sensor, charging sensor (charging sens〇r), wafer position sensor, wafer temperature sensor, local gas pressure sensor, residual gas analyzer (residual nafu)洲' RGA), optical emission spectroscopy '〇ES, such as time of flight (time 〇f 幽, T〇F) ❹
感測器的離子化物種感測器。 控制器106可以從各種系統以及離子束侧系統100 的=種構件接收各種輸人資料及指令，並提供輸出訊號以 f制糸統⑽的構件。控彻觸可以是或包括通用型電 general-pUrpose c〇mputer)或通用型電腦網路，其可 化f執行所希望的輸人/輸出功能。控制器、⑽可以 ^羽处理☆ 122以及記憶體124。處理器122可包括本領 ，知的—個或多個處理器。記憶體124可以包括-個或 ==媒介，其提供由電腦系統或任何指令運行系 之ΪΓ連接的程式碼或電腦指令。為此，電 電腦:ί統:夠包含、儲存、通訊、傳播或傳輸由 矛 1式的任二晉。日先進行使用或與之進行連接之 二白勺丨减沾°電腦可讀媒介可以是電子的、磁性的、 是半導體系統(裝置或元 dlskette)、隨機存取記憶體（咖“ accessmem〇ry， 10 200926326 RAM)、唯5買^己憶體（reacj_on〗y memory，ROM)、硬磁 碟（rigid magnetic disk)以及光碟。光碟的現有實例包括 。貝緊凑型光碟（compact disk-read only memory， CD ROM)、可§貝/寫緊凑型光碟（c〇mpact disk_read/write， CD-R/W)以及數位視頻光碟（digita〗 vide〇 ，dVD)。 控制态106還可以包括其它電子電路或構件，諸如專 用積體電路、其它硬體或可程式化電子器件、離散元件電 路（dlScrete element circuit)等。控制器12〇還可以包括通 訊裝置。 用戶介面⑽126可包括但不限於諸如觸摸屏、鍵 盤、用戶指向裝置（userpointingdeviee)、顯示器 機等裝置’其允剌戶輸人指令、f料和/或透過控制器 106來監控離子束钱刻系統植入器1⑻。 σ 控制器106可以配置成允許用 100交互作用。例如，控制器1〇6可以使用戶系統 ❹ 戶介面126來輸入所希望的二維離子植入劑量:圖:： 均勾2的二維離子植入劑量佈味勻或 /cm )以基板上的二維位置函數形式的 :！（離子 植入劑量率與餘刻率之間的相互關係。包含 子植入劑量佈圖包括所希望的飯 中，離 佈圖’其中所希細刻圖案代表要在基及板離二= 200926326 案，離子劑量圖案佈圖表示施加至基板以獲得所希望姓刻 圖案的離子劑量以及速率。 控制器106可藉由多個座標來定義二維離子植入劑量 佈圖及其附隨佈圖（例如，所希望的蝕刻圖案佈圖及離子 劑量圖案佈圖），包括但不限於直角座標（Cartesian coordinate)及極座標（p〇iar coordinate )。在一實施例中， 一’准離子植入劑里佈圖是具有由相關直角座標來限定之 ❹ 16個不同區的簡化圖案。每一區中的數字代表可在基板 11 〇上提供均勻或非均句劑量的標稱劑量（n〇minal d〇se) 的乘數。二維離子植入劑量佈圖可以是不限於對稱圖案的 任意圖案。而且，可基於觀察到的植入劑量率與敍刻率的 相互關係以經驗方式推導出二維離子植入劑量佈圖，或者 可基於來自空間解析蝕刻率監控器而在原位（in situ;產 生。更具體地說，基於經驗的離子植入劑量佈圖可藉由如 下方法獲得：量測二維蝕刻率輪廓（通常在蝕刻製程外部） 並且將離子劑量率對蝕刻率的關係作為基板位置的函數。 ❿ 以最簡單的方式而言，對於線性近似，可使用關聯離子劑 量與蝕刻深度的比例常數的二維矩陣來獲得離子植入劑量 佈圖。如果在製程期間局部餘刻率隨時間變化，可藉由在 雀虫刻期間產生比例$數並對其進行回授控制來使用原位钱 刻率量測結果以獲得離子植入劑量佈圖。 控制器106玎進一步配置成藉由使用戶能夠輸入蝕刻 基板110的配方、觀察或修改由控制器1〇6自動選擇的配 方來允許用戶與離子束餘刻糸統100進行交互作用。配方 12 ❹ ⑩ 200926326 板110上所希望的特十生。具體而言，配方將實現事 =:，離子束蝕刻系統】00使用此製程參數值來生産 财勺：ΐϊ特性的基板。製程參數的示意性但非詳盡性 歹j表包括真空錢力、基板溫度、離子束物種、能量 電流密度、離子與基板的角度、晶圓 =速度：終端站壓力（或真U浦速度）、離子束S ς刀佈（貫質上是相對曝光的佈圖，其可以是均勻的或根 =要不達成均勻的_結果）或所希望的 參數可以包括由一個或多個可單獨調節之氣i 控制益仏應的一種或多種中性氣體物種的背景壓力、用以 產^電漿蝕刻之電漿的氣體物種、電漿密度、電漿中的中 性费度、電子溫度以及電子侷限度。 控制器106使用配方的製程參數值來選擇離子束參數 值’其體現於用以侧基板11〇的離子束中 將_ 值的示意性但非詳盡性的離子束參數列離又 饴度、離子束電流、離子束撞擊表面的角度以及離子 ^中離^量率。在一實施例中，控制器1〇6從歷史資料 丘中爲這些離子束參數選擇初始值，此歷史資料庫包括提 2在以蚰的離子束蝕刻中應用之這些參數的設定組合的多 】輸入（entry)。典型地，每一輸入透過從諸如配方產生 射束構建報告（beam setup report)以及離子植入報告 的各種來源以接收輸入資料而進行編輯。 控制器106使用配方的製程參數值來確定且控制在蝕 』‘程期間由離子束產生器102施加至基板11〇的原子物 13 200926326 種的施加。在一實施例中，由離子束產生器1〇2產生的離 子束108可由化學惰性物種（Si+、Ar+等）或其他化學飯 刻化合物（SiFx+、BFe等）所組成。在另一實施例中， 離子束產生器102還能夠引入活性物種，以幫助達成對基 板no的所希望之蝕刻。典型的活性物種能夠包括 ΟIonized species sensor for the sensor. The controller 106 can receive various input data and commands from various systems and components of the ion beam side system 100, and provide output signals to the components of the system (10). The control can be either a general-purpose general-pUrpose c〇mputer or a general-purpose computer network that performs the desired input/output functions. The controller, (10) can handle feathers ☆ 122 and memory 124. The processor 122 can include a processor, one or more processors. Memory 124 may include a - or == medium that provides code or computer instructions that are connected by a computer system or any instruction operating system. To this end, the computer: 统: enough to contain, store, communicate, spread or transmit by the spear 1 type of Ren Jin. The first computer can be used or connected to it. The computer readable medium can be electronic, magnetic, semiconductor system (device or element dlskette), random access memory (cafe "accessmem〇ry" , 10 200926326 RAM), only 5 buy ^ recall (reacj_on y memory, ROM), hard disk (rigid magnetic disk) and CD. Existing examples of CD include. compact disk-read only Memory, CD ROM), can be used to write compact discs (c〇mpact disk_read/write, CD-R/W) and digital video discs (digita vide〇, dVD). Control state 106 can also include other electronics Circuitry or components, such as dedicated integrated circuits, other hardware or programmable electronic devices, dlScrete element circuits, etc. The controller 12A may also include communication devices. The user interface (10) 126 may include, but is not limited to, such as a touch screen. , a keyboard, a user pointing device (userpointingdeviee), a display device, etc., which allow the user to input instructions, and/or monitor the ion beam system by the controller 106. (8) The σ controller 106 can be configured to allow interaction with 100. For example, the controller 1〇6 can cause the user system user interface 126 to input the desired two-dimensional ion implantation dose: Figure: The dimension ion implant dose is uniform or /cm) in the form of a two-dimensional position function on the substrate: (the relationship between the ion implantation dose rate and the residual rate. The inclusion of the implant dose layout includes the desired In the meal, the layout of the pattern is represented by the pattern in the base and the plate = 200926326, and the ion dose pattern layout indicates the ion dose and rate applied to the substrate to obtain the desired pattern of the last name. 106 may define a two-dimensional ion implantation dose layout and its accompanying layout (eg, desired etch pattern layout and ion dose pattern layout) by a plurality of coordinates, including but not limited to Cartesian coordinates And a polar coordinate (p〇iar coordinate). In one embodiment, a 'quasi-ion implant lining is a simplified pattern with 16 different regions defined by associated orthogonal coordinates. Numbers in each region The table may provide a multiplier of a nominal dose of a uniform or non-sequential dose on the substrate 11. The two-dimensional ion implantation dose layout may be any pattern not limited to a symmetrical pattern. The two-dimensional ion implantation dose layout can be empirically derived based on the observed correlation between the implant dose rate and the nick rate, or can be generated in situ based on the spatially resolved etch rate monitor. More specifically, an empirically based ion implantation dose layout can be obtained by measuring a two-dimensional etch rate profile (typically outside the etch process) and correlating the ion dose rate versus etch rate as a function of substrate position. . ❿ In the simplest way, for a linear approximation, a two-dimensional matrix of the proportional constants of the associated ionic dose to the etch depth can be used to obtain an ion implantation dose map. If the local residual rate changes over time during the process, the in-situ volatility measurement results can be used to obtain an ion implantation dose layout by generating a proportional $ number during the weft engraving and feedback control thereof. The controller 106 is further configured to allow the user to interact with the ion beam remnant system 100 by enabling the user to input the recipe for etching the substrate 110, observing or modifying the recipe automatically selected by the controller 1〇6. Formulation 12 ❹ 10 200926326 The desired special tenth on board 110. Specifically, the recipe will achieve the thing =:, ion beam etching system 00 uses this process parameter value to produce the substrate of the ΐϊ characteristic. Schematic but not exhaustive of process parameters, including vacuum force, substrate temperature, ion beam species, energy current density, ion to substrate angle, wafer = speed: terminal station pressure (or true U-pus speed), Ion beam S trowel (permeally is a pattern of relative exposure, which may be uniform or root = to achieve a uniform _ result) or the desired parameters may include one or more individually adjustable gases i controlling the background pressure of one or more neutral gas species, the gas species used to produce plasma-etched plasma, the plasma density, the neutrality in the plasma, the electron temperature, and the electronic limit . The controller 106 uses the recipe parameter values of the recipe to select the ion beam parameter value 'which is embodied in the ion beam used for the side substrate 11 列. The ion beam parameters of the _ value are separated from the enthalpy, ion The beam current, the angle at which the ion beam strikes the surface, and the ionization rate. In one embodiment, the controller 1〇6 selects initial values for these ion beam parameters from the historical data hills, and this historical database includes a set of combinations of these parameters applied in the ion beam etching with germanium. Enter. Typically, each input is edited by receiving input data from various sources, such as a beam setup report and ion implantation reports. The controller 106 uses the recipe parameter values of the recipe to determine and control the application of the atomic species 13 200926326 applied by the ion beam generator 102 to the substrate 11 during the etching process. In one embodiment, the ion beam 108 produced by the ion beam generator 1〇2 may be comprised of a chemically inert species (Si+, Ar+, etc.) or other chemically diced compound (SiFx+, BFe, etc.). In another embodiment, the ion beam generator 102 can also introduce active species to help achieve the desired etch of the substrate no. Typical active species can include
C12、co2、CO、〇2、〇3、cf4、NF3、NF2+離子、Bf2+離 子、F離子、F+離子、Cl或C1+離子。活性物種還可包括 具有或不具有活性氣體的UV光。在另一實施例中，離子 束產生器102還可以引入中性活性物種或活性低能離子。 操作時’在將基板110加載且鉗夹至壓盤112上之後， 離子束產生器102將原子物種施加至基板的表面。原子物 種對基板110的表面是活性的。在原子物種與基板11〇的 表面相互作用一預定時間之後，離子束產生器102將離子 束導引至表面。離子束108撞擊基板110的表面，引起原 子物種揮發（volatize)並開始钮刻。本質上，離子束控制 原子物種與基板11G表面的相互側且促進基板的所希望 白勺糾。 、爲了確保離子束108可提供對基板110的均勻钱刻和/ 或姓刻由離子植入劑量佈圖來體現的圖案，控制器 斷地監控料束參數（例如，離子束電流、離子ί撞擊表 的離子劑量率)，以確定離子束參: ::離子植人心佈_涵蓋的參數—致。具體而言 裔106接收來自感測器118以及感測器120和/或上文^ 之其它感測器的#測結果。接收的量測結果所採用的訊^ 14 200926326 束參數相關炉，、^ ’控制器使用此離子束屬性來與射 射束參數例如離子射束電流、離子束 里=的角度、離子束的密度以及離子 然後’控制器κ>6獲得離子束參數值並確H里车 的崎度以及•具體== ===技術來確定贿度及侧率，諸如; ❹ ❹ 分析、透過反射射光譜儀⑽） (empsometry)、干^旦=表面y刀析、橢圓光度法 術。控制器106使用二:（interfen)metry)或其它技 勻度以及其與離子吏===率來確絲刻的均 釘，深度分佈的; 叩主日7蝕刻圖案佈圖的所 又 施例中，钱刻深度以及_ I 。在—實 空間解析的—維或二_刻輪廓分^在基板上提供了 勻圖所:口:1如，均勻钱刻，非均 以及配方巾指定的^ 讀刻與料植人劑量佈圖 產生器⑽，使二麼控，將調節離子束 2供與離子植入劑量佈圖及配二::::=化誤差並且 t值(例如，離子束電流、離子束案的離子束 15 200926326 率相對中心過低’可相對中心來增加邊緣的離 赤所去二〜度（或劑里率）’以達成均勻的射彳深度來達 触刻圖案。這種侧監控以及離子束調節持續 到基板110的蝕刻完成。 鳩f2顯示了根據本發明第二實施例的離子束則系統 的不意性方塊圖。離子束蝕刻系統200實質上與 ❹C12, co2, CO, 〇2, 〇3, cf4, NF3, NF2+ ions, Bf2+ ions, F ions, F+ ions, Cl or C1+ ions. The active species may also include UV light with or without an active gas. In another embodiment, the ion beam generator 102 can also introduce a neutral active species or active low energy ions. In operation, after the substrate 110 is loaded and clamped onto the platen 112, the ion beam generator 102 applies an atomic species to the surface of the substrate. The atomic species are active on the surface of the substrate 110. After the atomic species interacts with the surface of the substrate 11 for a predetermined time, the ion beam generator 102 directs the ion beam to the surface. The ion beam 108 strikes the surface of the substrate 110, causing the atomic species to volatize and begin to engrave. Essentially, the ion beam controls the mutual side of the atomic species and the surface of the substrate 11G and promotes the desired correction of the substrate. In order to ensure that the ion beam 108 can provide a uniform pattern of the substrate 110 and/or a pattern whose surname is embodied by the ion implantation dose pattern, the controller intermittently monitors the beam parameters (eg, ion beam current, ion ί impact). The ion dose rate of the table) to determine the ion beam ginseng: :: ion implants _ covered parameters. Specifically, the 106 receives the results of the measurements from the sensor 118 and the sensors 120 and/or other sensors of the above. The received measurement results are used by the signal, and the controller uses the ion beam properties to correlate with the beam parameters such as the ion beam current, the angle of the ion beam, and the density of the ion beam. And the ion then 'controller κ>6 obtains the ion beam parameter value and confirms the riness of the car and the specific == === technique to determine the bribe and side rate, such as; ❹ ❹ analysis, transmission reflectance spectrometer (10) ) (empsometry), dry ^ Dan = surface y knife analysis, ellipsometry. The controller 106 uses two: (interfen)metry or other technical uniformity and its uniformity with the ion 吏=== rate to determine the depth of the nail, the depth distribution of the 叩 main day 7 etching pattern layout In, the depth of money engraved as well as _ I. In the real space analysis - the dimension or the second _ contour outline ^ provides a uniform image on the substrate: mouth: 1 such as, even money engraving, non-uniform and formula towel specified ^ reading engraved and plant implant dose layout The generator (10), for the second control, will adjust the ion beam 2 for ion implantation dose mapping and match the two::::= error and t value (for example, ion beam current, ion beam case ion beam 15 200926326 The rate is too low relative to the center 'relative to the center to increase the edge of the red to the second to the degree (or agent rate) to achieve a uniform depth of penetration to reach the pattern. This side monitoring and ion beam adjustment continues to The etching of the substrate 110 is completed. 鸠f2 shows an unintentional block diagram of the ion beam system according to the second embodiment of the present invention. The ion beam etching system 200 is substantially
1GG相同，然而，圖2的離子束侧系統包括 電漿源202來產生原子物種。替代由離子束產生器 来產生這些物種，電漿源搬配置成產生原子物種， 此如活性物種、惰性物種、亞雜(metastabIe)(電子激發 =、、、中性活性物種和/或活性低能離子。電製源搬可以 =、’、f、多孔源或能夠為基板提供相對均勻曝光的其他配 雷將意的是，.對基板110的電氣偏置(bias)是相對於 :原02的電位。在所有情況下，針對系、统⑽所描述 ，飯刻衣程的控航監控可適用於本實_並因此不 行早獨的論述。 -立囷3顯示了根據本發明一實施例的離子植入器300的 不思性方塊®的觀圖，此離子植人器3⑻可結合於圖1 ^圖2所科離子束㈣系射。許多其它離子植入器是 每此項技蟄者習知的’並且圖3的實施例僅作為 二例而k供’並不意圖作為限制。離子植入器则可以包 rΐΓϋ1。、擷取電極32。、f量分析儀33°、解析孔340、 η#:及角度修正磁鐵36〇。圖3的其它構件與圖1 ° 、冓件相似並進行類似標;:主，因此為了清晰起見而 16 200926326 掃:;=起=_廳纟會示成 認識到，押制儀50。本領域熟知此項技藝者將 每-構件:至;從以::出訊號至離子植入器300的 圖3中未W，儘管在 周圍的電漿源202。 了具有疋位在終端站104 ❹ 離子源310可產生離子，並可 離子化氣體的氣體盒。義體可供應至離子室至 =化。由此形成的離子可從離子源31。二來中: 電^ 320以及擷取電源可以加速來自離 :盖Γ電源可在控制器雇的控制下進行調節。離= 的構=及操作是本領域熟知此項技藝者習知的。-質量分析儀330可包括偏轉離子的解 希望物種的離子通過解析孔340而不希望的物 传所 解析孔340。在一實施例中，質量無法通過 望物種的離子，9G度。定位在解析孔34q下游 350,可以包括掃描電極和用於掃描離子束的其它雷田 描儀350可以包括靜電掃描儀或磁性掃描儀。齡、 是，使用帶狀束的離子植入器不需要掃描儀的 正磁鐵360偏轉所希望離子物種的離子， 角度修 束轉變成離子軌道實質上平行的近準直離子散的離子 collimated ion beam )。在一實施例中，角度修（nearly 可以將所希望的離子物種的離子偏轉7〇度=k磁鐵360 17 200926326 掃描儀350可在一方向上掃描離子束，而驅動機構】14 I在與掃描方向正交的方向上實際地驅動基板n〇，以將 掃描之離子束108分配在基板11〇的前表面上。在一實例 中，掃描方向可以在水平的X方向上，而驅動機構114可 在Y方向上垂直地驅動基板，其中X及Y方向由圖3的 座標糸統來定義。1GG is the same, however, the ion beam side system of Figure 2 includes a plasma source 202 to generate atomic species. Instead of producing these species by an ion beam generator, the plasma source is configured to produce atomic species such as active species, inert species, metastabIe (electron excitation =, , neutral active species, and/or active low energy). Ion. Electron source can be =, ', f, porous source or other lightning distribution capable of providing a relatively uniform exposure to the substrate. It is intended that the electrical bias to the substrate 110 is relative to: the original 02 In all cases, for the description of the system, (10), the navigation control of the cooking process can be applied to the actual and thus not discussed. - Lie 3 shows an embodiment according to an embodiment of the invention. The ion implanter 3 (8) can be combined with the ion beam (four) of Figure 1 ^ Figure 2. Many other ion implanters are per-technical. The conventional embodiment and the embodiment of FIG. 3 are only used as two examples and are not intended to be limiting. The ion implanter may include rΐΓϋ1, extract electrode 32, and the amount of analyzer 33°, the analysis hole 340 , η#: and angle correction magnet 36〇. Other components of Figure 3 and Figure 1 ° The parts are similar and similarly marked;: Lord, so for the sake of clarity 16 200926326 sweep:; = start = _ hall will be shown to recognize, the controller 50. Those skilled in the art will be per-component From: to: the signal to the ion implanter 300 of FIG. 3 is not W, although in the surrounding plasma source 202. There is a clamp at the terminal station 104. The ion source 310 can generate ions and can ion The gas box of the gas can be supplied to the ion chamber to the chemistry. The ions thus formed can be extracted from the ion source 31. In the second: the electric ^ 320 and the extraction power can accelerate the source: the cover power can be controlled Adjustments are made under the control of the employer. The configuration and operation of the = is well known to those skilled in the art. - The mass analyzer 330 can include ions that decompose ions of the desired species through the analytical aperture 340. The object is analyzed by the aperture 340. In one embodiment, the mass cannot pass through the ions of the species, 9G degrees. Positioned downstream of the resolution aperture 34q 350, the scan electrode and the other sifter 350 for scanning the ion beam can include static electricity. Scanner or magnetic scanner. Age, yes, Ion implantation with n-magnet scanner 360 does not require a ribbon beam deflecting desired ion species in ion beam into the repair angle ion trajectory substantially parallel to the near collimated scattered ion ion collimated ion beam). In one embodiment, the angle repair (nearly can deflect the ions of the desired ion species by 7 degrees = k magnets 360 17 200926326 scanner 350 can scan the ion beam in one direction, while the drive mechanism] 14 I in the scan direction The substrate n is actually driven in an orthogonal direction to distribute the scanned ion beam 108 on the front surface of the substrate 11A. In an example, the scanning direction may be in the horizontal X direction, and the driving mechanism 114 may be The substrate is driven vertically in the Y direction, wherein the X and Y directions are defined by the coordinate system of FIG.
另一離子植入器實施例可以產生靜止或固定的點狀束 (例如，在不使用掃描儀的情況下），而驅動機構114可 以在X和Y方向上驅動基板11〇以使離子束分佈在基板 u〇的$表面上。另一離子植入器實施例可以產生帶狀 束，其具有較大的寬度/高度比且寬度至少與基板U〇的寬 度一樣。然後，驅動機構114可以在與帶狀束寬度正交的 方向上驅動基板，以使離子束分佈在基板11〇的前表面上。 圖4顯示了根據本發明一實施例的描述圖1及圖2所 不之離子束蝕刻系統的操作的流程圖400。離子束蝕刻製 程從步驟402開始，其中離子束蝕刻系統載入或獲得用以 進行蝕刻的二維離子植入劑量佈圖（例如，所希望的蝕刻 圖案佈圖及離子劑量圖案佈圖）。在步驟4〇4，離子束蝕 刻系統還載入或獲得用以進行蝕刻的配方。如上所述，二 維離子植入劑量佈圖描述用戶希望在基板中蝕刻的圖案 (對稱或非對稱），而配方則描述離子束蝕刻系統用於獲 得所希望之蝕刻特性的蝕刻製程參數值。在載入了二維離 子植入劑量佈圖以及配方之後，來自加載盒或基板夾持器 的基板引入至真空室（位於終端站）内進行處理。具體而 18 200926326 中’傳輸機構將基板放置且鎖定在真空室 搞矣二、位置使得料束以及原子物種能夠穿透基 极衣谊7 〇 在步驟408中，和岳|丨哭彳Λ/Γ /4_ 及配方的程夫使用離子植人劑量佈圖以 "多數值來璉擇離子束參數值，離子束參 ^體^用以钱刻基板m的離子束中 原子=:將原子物種施加到基板n〇。如上所述， β 細生低能；I::::，物種、化學㈣成份 表面相互作用一預;：12中’原子物種與基板則 將離子Γ/14 + ’控制器促使離子束產生器102 声而5丨引基板的表面。離子束1〇8撞擊基板110的 =所提供之圖案開始進行姓刻。在步 ^雷t侧製域間不斷地監控離子束參數（例如，離 ❹二撞擊表面的角度、離子衫度以及離子 糊:s以及程參數。具體而言，控制器從射 測器12。接收量測結果並在步驟 致0。中叙侧疋否與離子植人劑量佈圖所提供的圖案一 如果在步驟420 +，控制器 提供的圖案不-致，則控制; :即離子束產生器1〇2，使得離子束 】 k供與離子植入劑量佈圖-致的圖案。具體而言;= 19 ❹ ❹ 200926326 Γΐΐίίί所希望的钱刻深度圖案有偏差的佈圖並且使 ，的差異峨來修改離子劍量佈圖 差^驟416至422中進編刻監控 中確定基板110的㈣已經完成ί: ==刻有關的某些處理功能。在這點上，上方 立的Γ ^表與實現14些功能相_製㈣作。还應該注 思的疋，在一些替代實施方式中， .'、/ 可不以圖式巾所註釋的鄉 到的動作 質上同時進行或以相反的順=如::據:： 差 -ir ^r<^LjL Λ \ 爲思二步驟思圖模仿以始0 :式塗抹基板的—先-後兩個晝筆 本領域熟知此項技藝者將認識 。而且， 的其它方框。 曰加描述此處理功能 - 5顯不了包括三個蝕刻區（區卜 “版而舌，圖 的钱刻圖案佈圖的實例。在此^，'及區3)白勺所希望 區2的蝕刻率，區2的姓判Λ ，區1的蝕刻率大於 圖5所示的徑向變化實例;==二的_率。結果， 所降低。 ▲板邊緣的網相較於中心有 圖6顯示了產生圖5中 離子劑量目案佈目的實例。且1糊11案佈圖的 "體而吕，圖6顯示了區1的 20 200926326Another ion implanter embodiment can produce a stationary or fixed point beam (eg, without the use of a scanner), while drive mechanism 114 can drive substrate 11 in the X and Y directions to distribute the ion beam On the surface of the substrate u〇. Another ion implanter embodiment can produce a ribbon beam having a larger width to height ratio and a width at least as wide as the width of the substrate U〇. Then, the driving mechanism 114 can drive the substrate in a direction orthogonal to the width of the ribbon beam so that the ion beam is distributed on the front surface of the substrate 11A. 4 shows a flow chart 400 depicting the operation of the ion beam etching system of FIGS. 1 and 2, in accordance with an embodiment of the present invention. The ion beam etching process begins at step 402 where the ion beam etching system loads or obtains a two dimensional ion implantation dose layout (e.g., a desired etch pattern layout and ion dose pattern layout) for etching. At step 4〇4, the ion beam etching system also loads or obtains a recipe for etching. As noted above, the two dimensional ion implantation dose layout describes the pattern (symmetric or asymmetrical) that the user wishes to etch in the substrate, while the formulation describes the etching process parameter values used by the ion beam etching system to achieve the desired etch characteristics. After loading the two-dimensional ion implant dose layout and formulation, the substrate from the load cell or substrate holder is introduced into the vacuum chamber (located in the terminal station) for processing. Specifically, in 18200926326, the 'transport mechanism places the substrate and locks it in the vacuum chamber, so that the material beam and the atomic species can penetrate the base fabric. In step 408, and Yue|丨哭彳Λ/Γ /4_ and the formulation of the formula using the ion implantation dose layout to select the ion beam parameter value with a multi-value, the ion beam is used to etch the atom in the ion beam of the substrate m =: the atom species are applied To the substrate n〇. As described above, β is fine and low energy; I::::, species, chemical (4) component surface interaction is pre-; 12 in 'Atomic species and substrate, the ion Γ/14 + ' controller drives the ion beam generator 102 The surface of the substrate is sounded. The ion beam 1 〇 8 strikes the substrate 110 = the pattern provided begins to be surnamed. The ion beam parameters are continuously monitored between the steps (eg, the angle from the impact surface, the ion mobility, and the ion paste: s and the path parameters. Specifically, the controller is from the detector 12. Receiving the measurement result and causing 0 in the step. The middle side is not related to the pattern provided by the ion implantation dose layout. If the pattern provided by the controller is not-induced in step 420+, the control is performed: : ion beam generation 1〇2, so that the ion beam] k is supplied with the ion implant dose pattern-specific pattern. Specifically; = 19 ❹ ❹ 200926326 Γΐΐ ί ί 希望 希望 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度 深度修改 修改 修改 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 416 In addition to the realization of some of the functions of the four systems, it should also be noted that in some alternative implementations, .', / may not be accompanied by the pattern of the township to the quality of the action simultaneously or in reverse =如:: according to:: difference -ir ^r<^LjL Λ \ for thinking two steps The first-last two stencils of the substrate are known from the beginning to the beginning: the other two are well known to those skilled in the art. Moreover, the other blocks are described. The description of this processing function - 5 shows that three etching zones are included.卜" version of the tongue, the example of the money engraved pattern layout. In this ^, 'and area 3) the desired area 2 etch rate, the area 2 last name Λ, the area 1 etch rate is greater than Figure 5 The radial variation example shown; == two _ rate. The result is reduced. ▲ The edge of the plate is compared to the center. Figure 6 shows an example of the generation of the ion dose pattern in Figure 5. The layout of the "body and Lu, Figure 6 shows the area 1 of 20 200926326
St於:二區2的離子劍量大於區3 間分佈，以解：致它：定義可以不同於姓刻空 圖案佈圖提:的圖㊁:制：106確定蝕刻與所希望的蝕刻 -致的_。更且體^ ^ 離子獻劑量佈圖 深度圖案有偏差的佈圖，並 所希望姓刻 變離子劑量佈圖以局部補償偏生的差異訊號來改 圖的修正韻刻率輪廟的顯示了使用誤差佈 緣，基板中心的叙利农w在圖7的貫例中，相對於邊 改變離子束劑量°爲了補舰料巾的誤差， 中，圖二 圖案。在_ 區（即，區卜2以及3^率相對於圖案的其它的 刻率，以確定修u 降低。在此實例中，持續監控蝕 二二=!作;否充分。如果不充分，則將發生 & s至後得所希望的細]圖案。 雖然二維均勻度修正的方法。 領域孰知此垣= 體顯示並描述了本發明，但本 此^理各種變型以及修改。因 發明精神内的此心=意圖覆蓋所有落入本 【圖式簡單說明】 示意根據本發明一實施例的離子束侧系統的 200926326 c 圖2顯示了根據本發明第二實施例的離子束蝕刻系統 的不意性方塊圖。 ^ ”、'員示了根據本發明一實施例的可結合於圖1及圖 2所不之離子束㈣&統巾雜子植人胃的示意性方塊圖 的頂視圖。 圖4顯示了根據本發明一實施例的描述圖丨及圖2所 不之離子束蝕刻系統的操作的流程圖。St: The ion sword of the second zone 2 is larger than the zone 3 distribution, so that the solution: the definition can be different from the surname pattern: Figure 2: System: 106 determines the etching and the desired etching - of_. Moreover, the body ^ ^ ion dose layout pattern has a deviation of the layout, and the desired surnamed ion dose layout to partially compensate for the partial difference signal to modify the map to correct the rhyme rate of the turn of the temple shows the use error In the case of the edge of the substrate, in the example of Fig. 7, the ion beam dose is changed with respect to the edge. In order to compensate for the error of the towel, the pattern of Fig. 2 is shown. In the _ area (ie, the area 2 and the 3^ rate relative to the pattern's other engraving rate to determine the repair u decrease. In this example, continuously monitor the eclipse = 2; do not; if not enough, then The pattern of the 2nd uniformity correction will occur. The method of the two-dimensional uniformity correction is known. The field shows that the present invention is shown and described, but various modifications and modifications are possible. This heart within the spirit = intends to cover all of the contents of the present invention. [0261] The embodiment of the ion beam side system according to an embodiment of the present invention is shown in Fig. 2, which shows an ion beam etching system according to a second embodiment of the present invention. Unexplained block diagram. ^", 'A top view of a schematic block diagram of an ion beam (4) & towel miscellaneous implanted stomach of Figs. 1 and 2 according to an embodiment of the present invention. 4 shows a flow chart depicting the operation of the ion beam etching system of FIG. 2 and FIG. 2, in accordance with an embodiment of the present invention.
，5顯示了根據本發明一實施例的所希望的蝕刻圖 佈圖貫例。 ’、 圖6顯示了根據本發明一實施例的離子劑量圖案 實例。 ^國 圖7顯不了根據本發明一實施例的使用誤差佈圖的修 正钮刻率輪廓的實例。 ^ 【主要元件符號說明】, 5 shows a preferred example of an etch pattern in accordance with an embodiment of the present invention. Figure 6 shows an example of an ion dose pattern in accordance with an embodiment of the present invention. ^ Country Figure 7 shows an example of a correction button engraving profile using an error layout in accordance with an embodiment of the present invention. ^ [Main component symbol description]
100 離子束姓刻系統 102 離子束產生器 104 終端站 106 控制器 108 離子束 110 基板 112 壓盤 114 驅動機構 116 位置感測器 118 射束感測器 22 200926326 120 :射束感測器 122 :處理器 124 :記憶體 126 :用戶介面系統 200 :離子束蝕刻系統 202 :電漿源 300 :離子植入器 310 :離子源 ❹ 320:擷取電極 330 :質量分析儀 340 :解析孔 350 :掃描儀 360 :角度修正磁鐵 400 :流程圖 402、404、406、408、410、412、414、416、418、 420、422、424 :步驟 ❹ 23100 ion beam surname system 102 ion beam generator 104 end station 106 controller 108 ion beam 110 substrate 112 platen 114 drive mechanism 116 position sensor 118 beam sensor 22 200926326 120 : beam sensor 122: Processor 124: Memory 126: User Interface System 200: Ion Beam Etching System 202: Plasma Source 300: Ion Implant 310: Ion Source 320: Draw Electrode 330: Mass Analyzer 340: Analytical Hole 350: Scan Instrument 360: Angle Correction Magnet 400: Flowcharts 402, 404, 406, 408, 410, 412, 414, 416, 418, 420, 422, 424: Step ❹ 23