TWI250599B - Monitor wafer for high current ion implanter, and the method for monitoring charging using the same - Google Patents

Abstract

The present invention provides a method for monitoring the charging of high current ion implanter, which includes the following steps: placing the monitor wafer into an ion implantation chamber of the high current ion implanter, in which the monitor wafer is composed of a semiconductor substrate, an oxide layer as the isolation layer, and a poly-silicon layer as the charging layer; conducting the ion implantation with a specific recipe on the monitor wafer; annealing the monitor wafer; measuring the resistance at predetermined plurality of positions on the monitor wafer; and, determining if the average resistance of the monitor wafer exceeds the standard deviation over a predetermined standard range.

Description

Ϊ250599 V. INSTRUCTION DESCRIPTION (1) Field of the Invention The present invention relates to a method in which a semiconductor ion species is suitable for use in a high dose ion implanter, particularly with respect to an electrical phenomenon. The control of the Japanese film and the background of its invention in the semiconductor manufacturing process, the introduction of the wafer material under the conditions of the next, state #: I * the doping (dopant) in control, to achieve; It is by means of doping (4)_). $, is the ion implantation technology (ion is implanted in the current ion implantation Φ dose but low energy implantation method, because α = large area wafer, high use is increasingly widespread. Mainly; The application of the ion implanter should be based on the fabrication of source/dippole, polycrystalline tantalum load or 疋 spinel gate. Because ^ ^ ^ ^ .. Therefore, the joint depth/member control (4), and the energy of the ion implantation is also reduced. Generally, the ion implantation of the two electrodes is usually higher than the lmA beam current. The incoming current usually provides the ion current of the type ion and the P-type ion implantation current of 6-12 mA. In the operation of the general two-current ion implanter, a bared wafer is usually used as the Monitoring the wafer (monit〇r wafer) to monitor the on-line stability of the machine, mainly detecting whether the ion implantation dose of the ion implantation machine is deviated, and whether the condition of the machine is abnormal. Under the condition, when the implant dose of the ion implanter meets the requirements When the value of 'the resistance measuring monitor wafer (RS), will give the corresponding standard value. However, when the dose of implanted ion implanter is above or below the standard setting,

0389-7482TWF; P900517; Peggy.ptd Page 4 1250599 V. Inventive Note (2) Ion implantation is low. Therefore, after the ions are known, the monitoring wafer monitors the stability of the implanted wafer and the high current is away from the high-energy electron energy. When the main resistance is abnormal, the charging is not formed, and the film is high. The chip connectors are not damaged by the blocking electrons and the direct product wafers are damaged, and the invention cannot be used for the bias of one of the destination machines. It is often designed to block unnecessarily high-blocking, high-energy, wafer-like wafers that flow into the ion implanter. When the bias voltage is directly introduced into the crystal, it is led to the ground through the ground. Therefore, it is qualitative that the resistance value measured by the bias voltage of the ion implantation machine does not conform to the specification. The bias electrode in the sub-implant is capable of electrons. When this electron is directly implanted, it destroys the semiconductor functional film in the reaction chamber on the wafer as a high-current ion, and the wafer die that does not charge but is charged due to charging phenomenon. After the change, the resistance value changes, and the pole is abnormal. It will also increase or decrease. In the online personnel, the sub-implantation of the special implanter as a blocking bias electrode to the product crystal element is too frequent, resulting in wafer die phenomenon, but the wafer is monitored. Get the function of blocking the function early on, sex. In the monitoring of the crystallizing process, in the case of high-energy electricity, and for the upper element, the high-efficiency monitoring of the high-current ion implantation machine is abnormally biased, and the present invention provides a monitoring device for high-current ion implantation. When the function is abnormal, it is immediately up to the monitoring: the characteristics of the film are changed;

1250599 V. INSTRUCTIONS (3) — In addition to the implant dose stability of the South-South current ion implantation machine, it is possible to simultaneously monitor whether the high-current ion implanter generates charging. A monitoring wafer according to the present invention, suitable for use in a high current ion implanter, comprises: a semiconductor substrate; an isolation layer over the semiconductor substrate; and a charging layer over the isolation layer, wherein When one or two electrons are introduced into the monitor wafer, the high-energy electrons are stuck in the charging layer. In the above monitoring wafer, the semiconductor substrate may be a germanium wafer die. The spacer layer may be an oxide layer having a thickness of 6 〇 to 65 〇〇 A to isolate high energy, and the sub-layers are prevented from being grounded directly via the germanium substrate. The charging layer may be a polycrystalline stone material having a thickness of 550 to 4000 A. When high-energy electrons are introduced, the electrons are stagnated in the material and are not grounded. A method for monitoring a charging phenomenon of a high current ion implanter according to the present invention, comprising: placing the monitoring chip in an ion implantation chamber of the high current ion implantation machine; And monitoring the crystal 2 for performing a predetermined condition of ion implantation; tempering the monitor wafer to measure the resistance value of a predetermined complex position on the monitor wafer; and determining whether the resistance value of the predetermined complex position exceeds one The scope of the established standard. f In the above method, determining whether the resistance value of the predetermined complex position exceeds the range of the private standard, the resistance value of the predetermined complex position may be averaged and the standard deviation to determine the average value and the standard value of the resistance value of the predetermined complex position. 2 Whether it exceeds a predetermined standard range. The high-current ion implantation can be immediately reacted by the above method for monitoring the wafer and monitoring the charging phenomenon of a high-current ion implanter according to the present invention.

0389-7482TWF; P900517; Peggy.ptd Page 6 1250599 V. Description of the invention (4) Whether the machine has a bias abnormality, improve the immediate response and avoid damage to the product chip. In order to make the above objects, features, and advantages of the present invention more comprehensible, the following detailed description will be made with reference to the accompanying drawings: FIG. 1A shows a general wafer die as a high current ion. The intention of the implanter to monitor the wafer, FIG. 1B is a schematic view showing the monitor wafer in one embodiment of the present invention as a two-current ion implanter monitor wafer, and FIG. 2 is a view according to the present invention. In one embodiment, a method flow diagram for monitoring a charging phenomenon of a high current ion implanter using one of the present invention monitors the wafer. DESCRIPTION OF SYMBOLS 10 Wafer die, 11 ground lines, 18 high energy electronics, 20 monitor wafers, 22 wafer dies, 24 oxide layers, 26 polysilicon layers. S202~S210: Process steps. - Examples Referring to Figure 1A, a typical wafer die is shown as a high current ion implanter monitor wafer. The monitoring chip 10 is a wafer die,

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:: The flow chamber of the flow ion implanter is grounded via line u. When the bias voltage of the high-voltage ion implanter is abnormal, the high-energy electron 18 is directly grounded. Therefore, after the ion implantation, the resistance change of the 0-turn die does not reflect the influence of the energy of the electron. . Referring to Figure 1B, there is shown a schematic diagram of a monitor wafer in one embodiment of the present invention as a high current ion implanter monitor wafer. Wherein, the monitor wafer 2'' according to the present invention comprises a semiconductor substrate, such as a bare wafer wafer 22, and on the wafer die 22, an isolation germanium, such as an oxide layer (〇xide) is formed. 24, the thickness of which may be between 6 〇 and 65 〇〇 A. In a preferred embodiment, the thickness of the oxide layer 24 is 1 〇〇〇 a ^ while on the oxide layer 24, a charge layer is formed, such as The polycrystalline germanium layer (the thickness of the polycrystalline germanium layer may be between 550 and 4000 A'. In a preferred embodiment, the thickness of the polycrystalline germanium layer is 1500-1 A. The above-described monitor wafer of the present invention 2〇 When the device is used in a high-current ion implanter, although it is also grounded via the line 11, when the bias of the high-current ion implanter is abnormal, the erbium electron 18 is blocked by the oxide layer 24 and is not directly grounded. The circuit is deferred and stagnated in the polysilicon layer 26 to form a charging phenomenon. At this time, the polysilicon layer 26 has a capacitance characteristic to retain the electrons 18. Also due to the surface charging phenomenon of the polysilicon layer 26, the ion beam is implanted. Divergence, and the amount of implant is reduced, so monitor wafer 2 after ion implantation The resistance value will be higher than the standard resistance. In addition, due to the high-energy electron charging phenomenon, the uniformity of ion implantation on the surface of the monitor wafer is poor, so that the standard deviation of the resistance value is improved. Therefore, it can be obtained by ion implantation. Monitor the change in resistance of the wafer and directly know whether the high-current ion implantation machine is monitoring

1250599, invention description (6) ^The charging phenomenon of the enamel film, that is, whether the bias current of the high-current ion implantation machine is abnormal. Next, a flow chart of a method for monitoring the charging phenomenon of a high current ion implanter using the above-described monitor wafer 20 of the present invention in accordance with an embodiment of the present invention will be described in detail with reference to FIG. In step S202, a monitor wafer is placed in one of the ion implantation chambers of the high current ion implantation stage. Wherein the monitoring wafer is one of the above-mentioned ones: the wafer-controlled a-chip includes a semiconductor substrate; an isolation layer is disposed on the substrate, and a charging layer is disposed on the isolation layer, When the electron can be electronically introduced into the monitor wafer, the high-energy electron is stagnant in a good case, the semiconductor substrate of the monitor wafer is a wafer bare wafer, and the isolation layer can be an oxide I, 'in a preferred embodiment, The thickness of the oxide layer is = Λ, and the γ is estimated to be a polycrystalline germanium layer, and the thickness thereof may be between 550 and 4000 Å, and the thickness of the polycrystalline germanium layer is 1,500 Å. Ion implantation. Among them, ion implant ratio = cow: control sensitivity. In one embodiment, the temple; the second is the best monitor (As), the implant energy is 80KeV, and the implant dose is 珅' 珅 例, in the ion implantation condition, the phosphorus ion (P) is 楢L in another implementation. The dose is m4. However, the present invention does not have a second energy of 3 〇 KeV, and then proceeds to step S206: the monitor wafer

1250599 V. Description of invention (7)

Unnealing). By monitoring the tempering patch, the monitoring wafer is returned to a stable state, the damage of the sa cell of 6 is piled, and the program of the 70% ion doping is performed. The subscriber advances the step S208. • The resistance of the monitor is measured. In the embodiment t, the above-mentioned supervision is taken; 匕 = the complex digits are respectively measured for their resistance values. However, the s f = f surface is 49 points, limited. The resistance sampling point of the control Japanese film is not used to obtain the resistance value of the various positions on the wafer after the monitoring, and then the resistance value of the predetermined complex position is interrupted I / 821 0 . Whether the average value and the standard deviation are more than the following is a comparison of the monitoring results of the high-current ion implantation in which the monitor wafer 20 of the present invention and the general wafer die 10 are subjected to high-current ion implantation according to the above method. The bias state in the first table of the brother electrician 1 indicates whether the bias function of the high current ion implanter is turned on. When the bias function is turned on, the high energy electrons are blocked, 0389-7482TWF; P900517; Peggy .ptd Page 10 1250599

Fifth, the invention description (8) will not cause charging phenomenon on the wafer. When the bias function is turned off, the high-energy electrons are introduced into the wafer along with the ion implantation to form a charging phenomenon, thereby representing a state in which the bias function is abnormal. From the results in Table 1, it can be seen that when the general wafer die 10 is used as the monitor wafer, the average value of the resistance after ion implantation is achieved regardless of whether the bias function of the high current ion implanter is turned on. There is no difference between the value and the standard deviation. However, if the monitor wafer 2 of the present invention is used as the monitor wafer of the high-current ion implanter, when the bias function is turned off, the average value of the resistance of the monitor wafer 20 after ion implantation is greatly increased (264 5 - 3728). The resistance is increased by two 5^ =. In addition, in addition to the increase in the average value of the resistance, the standard deviation is also such that the normal value of the wafer is monitored due to the high-energy phenomenon when the high-current ion implantation is performed. From the above data, it is known whether or not the charging function is affected by the change in the bias function of the machine. The invention has the advantages of monitoring the phenomenon of abnormal reaction bias when monitoring the high-current ion implantation to monitor the bias current of the ion-implanted flow ion implantation machine, thereby effectively improving the production yield. Although the bias function of the present invention is abnormal, the electrons are directly introduced into the monitoring wafer 2, and the average resistance value and the standard deviation are significantly deviated. With the monitoring wafer of the present invention, the actual response can be made. High-current ion implantation abnormality, and by monitoring the resistance of the wafer, by the method of monitoring the design of the wafer of the present invention, the bias of the device is abnormal, in addition to the stability of the agent, and also for the high power Basket, control function, can avoid unnecessary damage to the product film, the example is disclosed above, but it is not limited

0389-7482TWF; P9〇〇517; Peggy.ptd Page 11 1250599 V. INSTRUCTIONS (9) In order to achieve the present invention, any person skilled in the art can make some changes without departing from the spirit and scope of the present invention. The scope of protection of the present invention is therefore defined by the scope of the appended claims.

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Claims (1)

1250599 Case No. 91101776 q I Year 丨V Month>1曰Amendmentή!“'. Patent Application Area 1. A monitoring chip for a high-current ion implanter, including semiconductor spacers According to the application of the substrate, according to the application of the base, according to the thickness of the application layer, according to the thickness of the application layer, one of the supervision layers, one half of which is separated by more than one electron conduction layer; the monitoring energy electron layer 2 · semiconductor 3 Isolation layer 4. 矽 5 5. 多 . 系 多 . . 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 When the wafer is being monitored, the high-energy electron is stagnant in the monitoring wafer described in the first aspect of the patent application, wherein the wafer is a chip. The monitoring wafer described in claim 1 is the layer. Please refer to the monitoring chip described in item 3 of the patent, wherein the degree is 60~6 500 Α. Please monitor the wafer according to the first item of the patent range, wherein the degree is 55 0~4 0 0 A. One A method of charging a current ion implantation machine, wherein the control wafer is ion implanted in the high current ion implantation machine; the monitoring wafer system comprises: a conductor substrate; a separation layer on the semiconductor substrate: and a crystal charging layer Located on the isolation layer, wherein, when entering the monitoring wafer, the high-energy electrons are stagnant on the polycrystalline wafer for ion implantation of a predetermined condition; 0389-7482TWF1; P900517; Peggy.ptc Page 13 1250599 _ Case No. 91101776_Yearly revision _ 6. The patent application scope measures the resistance of a given complex position on the monitor wafer; and judges the resistance of the established complex position Whether the value exceeds a predetermined standard range. 7. The method for monitoring a charging phenomenon of a high current ion implanter according to claim 6 of the patent application scope, wherein determining whether the resistance value of the predetermined complex position exceeds a predetermined standard range comprises determining the predetermined complex position Whether the average and standard deviation of the resistance exceeds a predetermined standard range. 8. The method of monitoring the charging phenomenon of a high current ion implanter according to claim 6 of the scope of the patent application, wherein the semiconductor substrate is a Shihua wafer die. 9. A method of monitoring the charging phenomenon of a high current ion implanter as described in claim 6 wherein said barrier layer is a tantalum oxide layer. A method of monitoring a charging phenomenon of a high current ion implanter according to claim 9 wherein the thickness of the tantalum oxide layer is 60 to 6500 A. 1 1 . The method for monitoring a charging phenomenon of a high current ion implanter according to claim 6 of the patent application, wherein the polysilicon charging layer has a thickness of 550 to 4000 A 〇 1 2. According to the scope of claim 6 The method for monitoring the charging phenomenon of a high current ion implanter, wherein after the ion implantation, the method further comprises the step of: tempering the monitor wafer. 0389-7482TWF1; P900517; Peggy.p t c第14页