CN111883452B - Method for determining actual working temperature of heat treatment machine - Google Patents
Method for determining actual working temperature of heat treatment machine Download PDFInfo
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- CN111883452B CN111883452B CN202010719460.5A CN202010719460A CN111883452B CN 111883452 B CN111883452 B CN 111883452B CN 202010719460 A CN202010719460 A CN 202010719460A CN 111883452 B CN111883452 B CN 111883452B
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Abstract
The embodiment of the application discloses a method for determining the actual working temperature of a heat treatment machine, which comprises the following steps: providing a semiconductor structure, wherein the semiconductor structure comprises an ion implantation layer; placing the semiconductor structure into a heat treatment machine for heat treatment; the set temperature of the heat treatment machine is a first temperature, and the actual working temperature of the heat treatment machine is a second temperature; performing Secondary Ion Mass Spectrometry (SIMS) analysis on the ion implantation layer after the heat treatment to obtain a test SIMS curve; the test SIMS profile corresponds to the second temperature; acquiring a first reference SIMS curve corresponding to the first temperature; and determining the relation between the actual working temperature and the set temperature of the heat treatment machine according to the test SIMS curve and the first reference SIMS curve.
Description
Technical Field
The embodiment of the application relates to the field of semiconductor manufacturing, in particular to a method for determining the actual working temperature of a heat treatment machine.
Background
In the semiconductor manufacturing, the process has strict requirements on the accuracy and stability of the temperature, so the measurement and calibration of the temperature are very important, the common temperature measurement method mainly uses a Thermal Couple (hereinafter referred to as TC) for measurement except for a temperature control module of the equipment, however, the actual working temperature of the heat treatment machine can only be deduced by theoretically calculating the temperature measured by the TC and the time of heat treatment in a manner of measuring and monitoring the actual working temperature of the heat treatment machine through the TC, and the actual working temperature of the heat treatment machine in the processing process of the heat treatment process cannot be accurately measured.
Disclosure of Invention
The embodiment of the application provides a method for determining the actual working temperature of a heat treatment machine to solve at least one problem in the prior art.
In order to achieve the above purpose, the technical solution of the embodiment of the present application is implemented as follows:
the embodiment of the application provides a method for determining the actual working temperature of a heat treatment machine, which comprises the following steps:
providing a semiconductor structure, wherein the semiconductor structure comprises an ion implantation layer;
placing the semiconductor structure into a heat treatment machine for heat treatment; the set temperature of the heat treatment machine is a first temperature, and the actual working temperature of the heat treatment machine is a second temperature;
performing Secondary Ion Mass Spectrometry (SIMS) analysis on the Ion-implanted layer after the heat treatment to obtain a test SIMS curve; the test SIMS profile corresponds to the second temperature;
acquiring a first reference SIMS curve corresponding to the first temperature;
and determining the relation between the actual working temperature and the set temperature of the heat treatment machine according to the test SIMS curve and the first reference SIMS curve.
In an optional embodiment, the method further comprises:
and adjusting the set temperature of the heat treatment machine according to the relation between the actual working temperature and the set temperature of the heat treatment machine.
In an optional embodiment, the determining the relationship between the actual working temperature and the set temperature of the thermal processing machine according to the test SIMS curve and the first reference SIMS curve includes:
comparing the peak value of the test SIMS profile to the peak value of the first reference SIMS profile;
if the wave peak value of the test SIMS curve is larger than the wave peak value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is lower than the set temperature of the heat treatment machine;
and if the wave peak value of the test SIMS curve is smaller than the wave peak value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is higher than the set temperature of the heat treatment machine.
In an optional embodiment, the determining the relationship between the actual working temperature and the set temperature of the thermal processing machine according to the test SIMS curve and the first reference SIMS curve includes:
comparing a trough value of the test SIMS curve to a trough value of the first reference SIMS curve;
if the trough value of the test SIMS curve is larger than the trough value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is higher than the set temperature of the heat treatment machine;
and if the trough value of the test SIMS curve is smaller than the trough value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is lower than the set temperature of the heat treatment machine.
In an optional embodiment, in response to determining that the actual operating temperature of the thermal processing tool is lower than the set temperature, the method further comprises:
acquiring a first set of reference SIMS curves corresponding to temperatures below the first temperature;
comparing the test SIMS profile to the first set of reference SIMS profiles, determining a second reference SIMS profile from the first set of reference SIMS profiles that matches the test SIMS profile;
acquiring a third temperature corresponding to the second reference SIMS curve;
adjusting the set temperature of the heat treatment machine according to the first temperature and the third temperature;
in response to determining that the relationship between the actual operating temperature of the thermal processing tool and the set temperature is that the actual operating temperature is greater than the set temperature, the method further comprises:
acquiring a second set of reference SIMS curves corresponding to temperatures above the first temperature;
comparing the test SIMS profile to the second set of reference SIMS profiles, determining a third reference SIMS profile from the second set of reference SIMS profiles that matches the test SIMS profile;
acquiring a fourth temperature corresponding to the third reference SIMS curve;
and adjusting the set temperature of the heat treatment machine according to the first temperature and the fourth temperature.
In an optional embodiment, the method further comprises:
and adjusting the set temperature of the thermal processing machine according to the determined relation between the actual working temperature and the set temperature and in a mode of increasing or decreasing a preset temperature step until the test SIMS curve is matched with the first reference SIMS curve.
In an optional embodiment, the preset temperature step includes at least one of: 5 ℃, 10 ℃ and 15 ℃.
In an optional embodiment, before the obtaining the first reference SIMS curve corresponding to the first temperature, the method further comprises:
providing a reference semiconductor structure, wherein the reference semiconductor structure comprises a reference ion implantation layer;
placing the reference semiconductor structure into a reference heat treatment machine for heat treatment;
and performing SIMS analysis on the reference ion implantation layer after the heat treatment to obtain a reference SIMS curve.
In an optional embodiment, the method further comprises:
constructing a reference SIMS profile database based on the reference SIMS profile;
the acquiring of the reference SIMS curve corresponding to the first temperature includes:
a first reference SIMS profile corresponding to the first temperature is obtained from the reference SIMS profile database.
In an alternative embodiment, the providing a semiconductor structure includes: providing a semiconductor structure comprising an ion implantation layer and a protection layer positioned on the ion implantation layer;
before the SIMS analysis is performed on the ion-implanted layer after the heat treatment, the method further includes:
and removing the protective layer.
In an alternative embodiment, the protective layer comprises a first protective layer; the first protective layer is a nitride layer.
In an alternative embodiment, the protective layer comprises a second protective layer; the second protective layer is an oxide layer.
The embodiment of the application provides a method for determining the actual working temperature of a heat treatment machine, which comprises the following steps: providing a semiconductor structure, wherein the semiconductor structure comprises an ion implantation layer; placing the semiconductor structure into a heat treatment machine for heat treatment; the set temperature of the heat treatment machine is a first temperature, and the actual working temperature of the heat treatment machine is a second temperature; performing Secondary Ion Mass Spectrometry (SIMS) analysis on the ion implantation layer after the heat treatment to obtain a test SIMS curve; the test SIMS profile corresponds to the second temperature; acquiring a first reference SIMS curve corresponding to the first temperature; and determining the relation between the actual working temperature and the set temperature of the heat treatment machine according to the test SIMS curve and the first reference SIMS curve. In the embodiment of the present application, the SIMS analysis is performed on the ion-implanted layer after the heat treatment, and the test SIMS curve corresponding to the actual operating temperature is compared with the first reference SIMS curve corresponding to the set temperature, so that the relationship between the actual operating temperature of the thermal processing apparatus and the set temperature of the thermal processing apparatus can be obtained based on the comparison result.
Drawings
Fig. 1 is a schematic flow chart illustrating a method for determining an actual operating temperature of a thermal processing apparatus according to an embodiment of the present disclosure;
FIG. 2 is a SIMS curve of boron element with heat treatment temperatures of 915 ℃ and 935 ℃ provided in the examples of the present application;
fig. 3a to fig. 3f are schematic structural diagrams of a method for determining an actual operating temperature of a thermal processing tool according to an embodiment of the present application.
Detailed Description
Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present application; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "adjacent to … …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on … …," "directly adjacent to … …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. And the discussion of a second element, component, region, layer or section does not imply that a first element, component, region, layer or section is necessarily present in the application.
Spatial relationship terms such as "under … …", "under … …", "below", "under … …", "above … …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
So that the manner in which the features and elements of the present embodiments can be understood in detail, a more particular description of the embodiments, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings.
An embodiment of the present application provides a method for determining an actual working temperature of a thermal processing machine, and fig. 1 is a schematic flow chart of the method for determining an actual working temperature of a thermal processing machine provided in the embodiment of the present application, where the method mainly includes the following steps:
In an embodiment of the present application, a semiconductor structure is provided that includes a semiconductor substrate and an ion implanted layer in the semiconductor substrate. In some embodiments, the semiconductor structure may further include a protective layer on the ion implantation layer to prevent diffusion of dopant ions of the ion implantation layer at a surface of the semiconductor structure in a subsequent step of heat-treating the ion implantation layer.
In an embodiment of the present application, the protection layer may include a first protection layer, and the first protection layer is used to protect the ion implantation layer from being oxidized in a subsequent process. The material of the first protection layer may be a nitride, such as silicon nitride. Nitridation process (NH) may be employed3Treatment) forms the first protective layer.
In the embodiment of the present application, the protection layer may include a second protection layer, and the second protection layer is used for preventing the doped ions of the ion implantation layer from diffusing on the surface of the semiconductor structure in the subsequent step of performing heat treatment on the ion implantation layer. The material of the second protective layer may be an oxide, such as silicon oxide. The second protective layer may be formed using a thermal oxidation method.
In another embodiment of the present application, the protection layer may include a first protection layer located on the ion implantation layer and a second protection layer located on the first protection layer, where the first protection layer is used to protect the ion implantation layer from being oxidized in a subsequent process, and the second protection layer is used to prevent doped ions of the ion implantation layer from diffusing on the surface of the semiconductor structure in a subsequent step of performing a heat treatment on the ion implantation layer. The first protective layer may be made of silicon nitride, and the second protective layer may be made of silicon oxide. Nitridation process (NH) may be employed3Treatment) forming a first protective layer on the ion implantation layer, and forming a second protective layer on the first protective layer by a thermal oxidation method.
In the embodiment of the present application,the semiconductor substrate can be an N-type semiconductor substrate, and the ion implantation layer is a P-type ion implantation layer. The doping ions of the P-type ion implantation layer can be boron, gallium and indium. In a specific embodiment, the ion-implanted layer includes a first ion-implanted layer, a second ion-implanted layer, and a third ion-implanted layer. The forming process of the ion implantation layer comprises the following steps: carrying out first ion implantation on the semiconductor substrate to form a first ion implantation layer; performing second ion implantation on the first ion implantation layer to form a second ion implantation layer; performing third ion implantation on the second ion implantation layer to form a third ion implantation layer; the ion implantation depth of the first ion implantation layer is greater than that of the second ion implantation layer, and the ion implantation depth of the second ion implantation layer is greater than that of the third ion implantation layer. In practical application, the energy of the first ion implantation can be 50-70 keV, and the dosage can be 7.5E12-9.5E12/cm2(ii) a The energy of the second ion implantation can be 90-110 keV, and the dosage can be 1.0E13-3.0E13/cm2(ii) a The energy of the third ion implantation can be 10-20 keV, and the dosage can be 1.0E13-2.0E13/cm2. Note that the doping types of the first ion implantation layer, the second ion implantation layer, and the third ion implantation layer are the same.
In another embodiment of the present application, the semiconductor substrate may also be an elemental semiconductor material substrate (e.g., a silicon (Si) substrate, a germanium (Ge) substrate, etc.), a composite semiconductor material substrate (e.g., a silicon germanium (SiGe) substrate, etc.), or a silicon-on-insulator (SOI) substrate, a germanium-on-insulator (GeOI) substrate, etc., and then the ion implantation layer includes an N-type ion implantation layer and a P-type ion implantation layer. In practical application, an N-type ion implantation layer may be formed in the semiconductor substrate, and then a P-type ion implantation layer may be formed in the N-type ion implantation layer. The doping ions of the P-type ion implantation layer can be boron, gallium and indium. The doping ions of the N-type ion implantation layer can be phosphorus, arsenic and tellurium.
102, placing the semiconductor structure into a heat treatment machine for heat treatment; the set temperature of the heat treatment machine is a first temperature, and the actual working temperature of the heat treatment machine is a second temperature.
In the embodiment of the present application, the semiconductor structure is placed in a thermal processing machine for thermal processing, and during the thermal processing, the doped ions in the ion implantation layer diffuse downward in the ion implantation layer due to the concentration gradient, and meanwhile, the energy obtained by the particles in the semiconductor substrate enables the particles in the semiconductor substrate to recombine the lattice structure of the semiconductor substrate, so as to eliminate or reduce the lattice defects caused by the ion implantation, thereby forming a more regular lattice. The set temperature of the heat treatment machine is a first temperature, and the actual working temperature of the heat treatment machine is a second temperature.
103, performing Secondary Ion Mass Spectrometry (SIMS) analysis on the ion implantation layer subjected to the heat treatment to obtain a test SIMS curve; the test SIMS profile corresponds to the second temperature.
In the examples of the present application, SIMS analysis was performed on the ion-implanted layer after the heat treatment to obtain a test SIMS curve. Wherein the test SIMS profile corresponds to the second temperature. In some embodiments, the protective layer may be removed before SIMS analysis of the ion-implanted layer after the heat treatment. When the protective layer includes the first protective layer and the second protective layer, removing the protective layer is to remove the second protective layer. The SIMS analysis is directed to the dopant ions in the ion-implanted layer, and the obtained SIMS curve is the dopant ion concentration and depth profile of the ion-implanted layer. For example, if the dopant ion of the ion-implanted layer is boron, SIMS analysis is performed on the boron element to obtain the concentration and depth profile of the boron element.
And 104, acquiring a first reference SIMS curve corresponding to the first temperature.
In an embodiment of the present application, a reference semiconductor structure is provided, the reference semiconductor structure including a reference ion implantation layer, the reference semiconductor structure being placed in a reference thermal processing platform for thermal processing, and the reference ion implantation layer after thermal processing being subjected to SIMS analysis to obtain a reference SIMS curve. And constructing a reference SIMS curve database based on the reference SIMS curve, and acquiring a first reference SIMS curve corresponding to the first temperature from the reference SIMS curve database. It should be noted that the reference semiconductor structure is the same as the semiconductor structure; furthermore, the reference ion implantation layer in the reference semiconductor structure is the same as the ion implantation layer in the semiconductor structure. Since the reference semiconductor structure is the same as the semiconductor structure, the structures of the reference semiconductor structure and the reference ion implantation layer may refer to the above description of the semiconductor structure and the ion implantation layer, and the reference semiconductor structure and the reference ion implantation layer are not described in detail herein. In practical application, the reference thermal processing machine may be a standard thermal processing machine set by an engineer or an imported thermal processing machine, that is, the actual working temperature of the reference thermal processing machine is equal to the set temperature of the reference thermal processing machine, so that the reference SIMS curve of the reference thermal processing machine corresponds to the set temperature. It should be noted that the reference SIMS curve database may include reference SIMS curves at all heat treatment temperatures of the heat treatment tool.
And 105, determining the relation between the actual working temperature and the set temperature of the heat treatment machine according to the test SIMS curve and the first reference SIMS curve.
In an embodiment of the present application, the test SIMS profile is compared with the first reference SIMS profile, and if the test SIMS profile does not match the first reference SIMS profile, it is determined that the actual operating temperature of the thermal processing tool does not match the set temperature of the thermal processing tool; and if the test SIMS curve is matched with the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine table is consistent with the set temperature of the heat treatment machine table. In order to improve the accuracy of the working temperature of the thermal processing machine, when the actual working temperature of the thermal processing machine does not match the set temperature of the thermal processing machine, the set temperature of the thermal processing machine can be adjusted according to the relationship between the actual working temperature of the thermal processing machine and the set temperature of the thermal processing machine; if the actual working temperature of the heat treatment machine accords with the set temperature of the heat treatment machine, the set temperature of the heat treatment machine does not need to be adjusted.
In an embodiment of the application, comparing the peak value of the test SIMS curve with the peak value of the first reference SIMS curve; if the wave peak value of the test SIMS curve is larger than the wave peak value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is lower than the set temperature of the heat treatment machine; and if the wave peak value of the test SIMS curve is smaller than the wave peak value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is higher than the set temperature of the heat treatment machine.
In the embodiment of the present application, since the doped ion concentration and the depth distribution curve of the ion implantation layer change with the change of the heat treatment temperature, when the heat treatment temperature is lower, the depth of downward diffusion of the doped ions of the ion implantation layer is shallower, so that the peaks and the troughs of the doped ion concentration and the depth distribution curve are more tortuous; when the heat treatment temperature is higher, the depth of the downward diffusion of the doping ions of the ion implantation layer is deeper, so that the wave crest and the wave trough of the concentration and the depth distribution curve of the doping ions are smoother. FIG. 2 is a SIMS curve of boron at heat treatment temperatures of 915 ℃ and 935 ℃ according to an example of the present application, in which the peak of the SIMS curve of boron at 915 ℃ is higher than the peak of the SIMS curve of boron at 935 ℃, and the valley of the SIMS curve of boron at 935 ℃ is higher than the valley of the SIMS curve of boron at 915 ℃. Wherein the ordinate is the concentration (cm) of boron element-3) The abscissa is the depth (nm) of the boron element. It should be noted that, in general, the concentration data of the shallow layer of the SIMS curve, for example, the first ten data points of the SIMS curve (for example, the first valley of the SIMS curve in fig. 2) are inaccurate and have a large deviation from the actual value, so the concentration data of the shallow layer of the SIMS curve is not considered when the SIMS curve is compared in the embodiment of the present application.
In another embodiment of the present application, the valley value of the test SIMS curve may be compared with the valley value of the first reference SIMS curve; if the trough value of the test SIMS curve is larger than the trough value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is higher than the set temperature of the heat treatment machine; and if the trough value of the test SIMS curve is smaller than the trough value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is lower than the set temperature of the heat treatment machine.
In this embodiment of the present application, the set temperature of the thermal processing apparatus is adjusted in a manner that a preset temperature step increases or decreases according to the determined relationship between the actual operating temperature and the set temperature until the test SIMS curve matches the first reference SIMS curve. The specific process is as follows: correspondingly to the fact that the actual working temperature of the heat treatment machine is lower than the set temperature of the heat treatment machine, the set temperature of the heat treatment machine is adjusted in a mode of increasing the preset temperature step length until the test SIMS curve is matched with the first reference SIMS curve; and correspondingly determining that the actual working temperature of the heat treatment machine is higher than the set temperature of the heat treatment machine, and adjusting the set temperature of the heat treatment machine according to a mode that a preset temperature step is decreased until the test SIMS curve is matched with the first reference SIMS curve. Wherein the preset temperature step length at least comprises one of the following: 5 ℃, 10 ℃ and 15 ℃. It should be noted that the preset temperature step can be adjusted according to the heat treatment temperature, and when the heat treatment temperature is higher (for example, the heat treatment temperature is greater than 800 ℃), the preset temperature step can be 10 ℃, 15 ℃, 20 ℃ or the like; when the heat treatment temperature is lower (for example, the heat treatment temperature is less than 800 ℃), the preset temperature step length can be 2 ℃, 5 ℃, 8 ℃ and the like.
In another embodiment of the present application, in response to determining that the actual operating temperature of the thermal processing tool is lower than the set temperature of the thermal processing tool, a first set of reference SIMS curves corresponding to temperatures below the first temperature may also be obtained; comparing the test SIMS profile to the first set of reference SIMS profiles, determining a second reference SIMS profile from the first set of reference SIMS profiles that matches the test SIMS profile; acquiring a third temperature corresponding to a second reference SIMS curve, wherein the third temperature corresponding to the second reference SIMS curve is the actual working temperature of the thermal processing machine, so that the set temperature of the thermal processing machine can be adjusted according to the first temperature and the third temperature until the test SIMS curve of the thermal processing machine is matched with the first reference SIMS curve; correspondingly to the fact that the actual working temperature of the heat treatment machine is higher than the set temperature of the heat treatment machine, a second group of reference SIMS curves corresponding to the temperatures above the first temperature can be obtained; comparing the test SIMS profile to the second set of reference SIMS profiles, determining a third reference SIMS profile from the second set of reference SIMS profiles that matches the test SIMS profile; and acquiring a fourth temperature corresponding to a third reference SIMS curve, wherein the fourth temperature corresponding to the third reference SIMS curve is the actual working temperature of the thermal processing machine, so that the set temperature of the thermal processing machine can be adjusted according to the first temperature and the fourth temperature until the test SIMS curve of the thermal processing machine is matched with the first reference SIMS curve.
In the embodiment of the present application, the relationship between the actual operating temperature of the thermal processing apparatus and the set temperature of the thermal processing apparatus may be obtained by comparing the test SIMS curve corresponding to the actual operating temperature with the first reference SIMS curve corresponding to the set temperature. And based on the relationship between the actual working temperature of the heat treatment machine and the set temperature of the heat treatment machine, whether the actual working temperature of the heat treatment machine is accurate or not can be obtained, and if the actual working temperature of the heat treatment machine is not accurate, the set temperature of the heat treatment machine can be adjusted based on the relationship between the actual working temperature of the heat treatment machine and the set temperature of the heat treatment machine. This kind of through SIMS curve comparison affirmation of this application embodiment the actual operating temperature of heat treatment board with the mode of the relation between the temperature of setting for of heat treatment board, the comparison of the heat treatment temperature between the different heat treatment boards of the research and development in-process of 3D NAND of being convenient for, the heat treatment temperature between the heat treatment board of the same model in the large-scale volume production in-process of 3D NAND of still being convenient for matches to do benefit to the productivity and expand fast, the heat treatment board of the large-scale volume production in-process of 3D NAND of still being convenient for simultaneously carries out weekly monitoring, thereby do benefit to product quality's detection and problem investigation.
A method for determining an actual operating temperature of a thermal processing tool according to an embodiment of the present application is described in detail below with reference to fig. 3a to 3f, where fig. 3a to 3f are schematic structural diagrams of a method for determining an actual operating temperature of a thermal processing tool according to a specific example of the present application, and as shown in fig. 3a to 3c, a semiconductor substrate 210, which is an N-type semiconductor substrate, is provided. A first ion implantation is performed on the semiconductor substrate 210 to form a first ion implanted layer 220. The energy of the first ion implantation can be 50-70 kilo-electron volts, and the dosage can be 7.5E12-9.5E12/cm2. Second ion implantation is performed on the first ion implantation layer 220 to form a second ion implantation layer 230. The energy of the second ion implantation can be 90-110 keV, and the dosage can be 1.0E13-3.0E13/cm2. Performing a third ion implantation on the second ion implantation layer 230 to form a third ion implantation layer 240, wherein the energy of the third ion implantation may be 10-20 keV, and the dose may be 1.0E13-2.0E13/cm2. As shown in fig. 3c, the first ion implantation layer 220 has a greater ion implantation depth than the second ion implantation layer 230, and the second ion implantation layer 230 has a greater ion implantation depth than the third ion implantation layer 240. In some embodiments, the first ion implantation layer 220 may be a first high voltage P-type well, the second ion implantation layer 230 may be a second high voltage P-type well, and the third ion implantation layer 240 may be a bottom select gate. Note that the doping types of the first ion implantation layer 220, the second ion implantation layer 230, and the third ion implantation layer 240 are the same.
As shown in fig. 3d, a first protection layer 250 is formed on the surface of the third ion implantation layer 240 by doping nitrogen element through a plasma nitridation method, and the material of the first protection layer 250 may be silicon nitride. The first protection layer 250 serves to protect the ion-implanted layer from being oxidized during a subsequent process. And forming a second protection layer 260 on the surface of the first protection layer 250 by a thermal oxidation method, wherein the second protection layer 260 may be made of silicon oxide. The second protection layer 260 is used for preventing the doped ions of the ion implantation layer from diffusing on the surface of the semiconductor structure in the subsequent step of performing heat treatment on the ion implantation layer. In some embodiments, the thickness of the second protection layer 260 may range from 100 angstroms to 200 angstroms. The structure formed in fig. 3d is now a semiconductor structure.
As shown in fig. 3e, the ion-implanted layer of the semiconductor structure is subjected to a heat treatment, which is performed in a thermal treatment tool.
After the semiconductor structure is heat treated, the second protective layer 260 is removed, and SIMS analysis is performed on the semiconductor structure except for the second protective layer 260, as shown in fig. 3 f. In some embodiments, the second protection layer 260 may be removed by wet etching. Here, a hydrofluoric acid aqueous solution may be used as an etching solution in the wet etching process.
The embodiment of the application provides a method for determining the actual working temperature of a heat treatment machine, which comprises the following steps: providing a semiconductor structure, wherein the semiconductor structure comprises an ion implantation layer; placing the semiconductor structure into a heat treatment machine for heat treatment; the set temperature of the heat treatment machine is a first temperature, and the actual working temperature of the heat treatment machine is a second temperature; performing Secondary Ion Mass Spectrometry (SIMS) analysis on the ion implantation layer after the heat treatment to obtain a test SIMS curve; the test SIMS profile corresponds to the second temperature; acquiring a first reference SIMS curve corresponding to the first temperature; and determining the relation between the actual working temperature and the set temperature of the heat treatment machine according to the test SIMS curve and the first reference SIMS curve. In the embodiment of the present application, the relationship between the actual operating temperature of the thermal processing apparatus and the set temperature of the thermal processing apparatus may be obtained based on the comparison result by performing SIMS analysis on the thermally processed semiconductor substrate and comparing the test SIMS curve corresponding to the actual operating temperature with the first reference SIMS curve corresponding to the set temperature.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
The methods disclosed in the several method embodiments provided in the present application may be combined arbitrarily without conflict to obtain new method embodiments.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (11)
1. A method for determining the actual working temperature of a heat treatment machine is characterized by comprising the following steps:
providing a semiconductor structure, wherein the semiconductor structure comprises an ion implantation layer;
placing the semiconductor structure into a heat treatment machine for heat treatment; the set temperature of the heat treatment machine is a first temperature, and the actual working temperature of the heat treatment machine is a second temperature;
performing Secondary Ion Mass Spectrometry (SIMS) analysis on the ion implantation layer after the heat treatment to obtain a test SIMS curve; the test SIMS profile corresponds to the second temperature;
acquiring a first reference SIMS curve corresponding to the first temperature;
comparing the peak value of the test SIMS profile to the peak value of the first reference SIMS profile;
if the wave peak value of the test SIMS curve is larger than the wave peak value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is lower than the set temperature of the heat treatment machine;
and if the wave peak value of the test SIMS curve is smaller than the wave peak value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is higher than the set temperature of the heat treatment machine.
2. A method for determining the actual working temperature of a heat treatment machine is characterized by comprising the following steps:
providing a semiconductor structure, wherein the semiconductor structure comprises an ion implantation layer;
placing the semiconductor structure into a heat treatment machine for heat treatment; the set temperature of the heat treatment machine is a first temperature, and the actual working temperature of the heat treatment machine is a second temperature;
performing Secondary Ion Mass Spectrometry (SIMS) analysis on the ion implantation layer after the heat treatment to obtain a test SIMS curve; the test SIMS profile corresponds to the second temperature;
acquiring a first reference SIMS curve corresponding to the first temperature;
comparing a trough value of the test SIMS curve to a trough value of the first reference SIMS curve;
if the trough value of the test SIMS curve is larger than the trough value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is higher than the set temperature of the heat treatment machine;
and if the trough value of the test SIMS curve is smaller than the trough value of the first reference SIMS curve, determining that the actual working temperature of the heat treatment machine is lower than the set temperature of the heat treatment machine.
3. The method for determining the actual operating temperature of a thermal processing machine according to claim 1 or 2, further comprising:
and adjusting the set temperature of the heat treatment machine according to the relation between the actual working temperature and the set temperature of the heat treatment machine.
4. The method as claimed in claim 1 or 2, wherein the determining of the actual working temperature of the thermal processing machine is performed in response to determining that the actual working temperature of the thermal processing machine is lower than the set temperature, and the method further comprises:
acquiring a first set of reference SIMS curves corresponding to temperatures below the first temperature; comparing the test SIMS profile to the first set of reference SIMS profiles, determining a second reference SIMS profile from the first set of reference SIMS profiles that matches the test SIMS profile; acquiring a third temperature corresponding to the second reference SIMS curve; adjusting the set temperature of the heat treatment machine according to the first temperature and the third temperature;
in response to determining that the relationship between the actual operating temperature of the thermal processing tool and the set temperature is that the actual operating temperature is greater than the set temperature, the method further comprises:
acquiring a second set of reference SIMS curves corresponding to temperatures above the first temperature; comparing the test SIMS profile to the second set of reference SIMS profiles, determining a third reference SIMS profile from the second set of reference SIMS profiles that matches the test SIMS profile; acquiring a fourth temperature corresponding to the third reference SIMS curve; and adjusting the set temperature of the heat treatment machine according to the first temperature and the fourth temperature.
5. The method for determining the actual operating temperature of a thermal processing machine according to claim 1 or 2, further comprising:
and adjusting the set temperature of the thermal processing machine according to the determined relation between the actual working temperature and the set temperature and in a mode of increasing or decreasing a preset temperature step until the test SIMS curve is matched with the first reference SIMS curve.
6. The method as claimed in claim 5, wherein the step of determining the actual operating temperature of the thermal processor comprises,
the preset temperature step length at least comprises one of the following steps: 5 ℃, 10 ℃ and 15 ℃.
7. The method for determining the actual working temperature of the thermal processing apparatus according to claim 1 or 2, wherein before the obtaining the first reference SIMS curve corresponding to the first temperature, the method further comprises:
providing a reference semiconductor structure, wherein the reference semiconductor structure comprises a reference ion implantation layer;
placing the reference semiconductor structure into a reference heat treatment machine for heat treatment;
performing SIMS analysis on the reference ion implantation layer after the heat treatment to obtain a reference SIMS curve;
wherein the reference semiconductor structure is the same as the semiconductor structure.
8. The method of claim 7, further comprising:
constructing a reference SIMS profile database based on the reference SIMS profile;
the acquiring of the reference SIMS curve corresponding to the first temperature includes:
a first reference SIMS profile corresponding to the first temperature is obtained from the reference SIMS profile database.
9. The method of claim 1 or 2, wherein providing the semiconductor structure comprises:
providing a semiconductor structure comprising an ion implantation layer and a protection layer positioned on the ion implantation layer;
before the SIMS analysis is performed on the ion-implanted layer after the heat treatment, the method further includes:
and removing the protective layer.
10. The method of claim 9, wherein the passivation layer comprises a first passivation layer;
the first protective layer is a nitride layer.
11. The method as claimed in claim 10, wherein the passivation layer comprises a second passivation layer;
the second protective layer is an oxide layer.
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