CN101393906A - Ion injection test body, ion injection region mask board and ion injection test method - Google Patents
Ion injection test body, ion injection region mask board and ion injection test method Download PDFInfo
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- CN101393906A CN101393906A CNA2007100462161A CN200710046216A CN101393906A CN 101393906 A CN101393906 A CN 101393906A CN A2007100462161 A CNA2007100462161 A CN A2007100462161A CN 200710046216 A CN200710046216 A CN 200710046216A CN 101393906 A CN101393906 A CN 101393906A
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Abstract
An ion injection testing body corresponding to different semiconductor substrates comprises a device region. The testing body further comprises at least one testing region which is located outside the device region for ion injection process testing. The ion injection testing body can reflect relatively genuine manufacturing effects of the ion injection process on the product during the process of the ion injection process testing. The invention further provides an ion injection region mask plate for forming the ion injection testing body which can reflect the relatively genuine manufacturing effects of the ion injection process on the product. Furthermore, the invention provides an ion injection testing method to allow the ion injection process testing operation to reflect the relatively genuine manufacturing effects of the ion injection process on the product.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of ion injection test body, ion injection region mask board and ion injection test method.
Background technology
Ion injects the important process as manufacture of semiconductor, and its detection of process is always paid attention to by industry.Current, industry is mainly utilized ion implantation process to detect data and is adjusted ion injection control technology.As: on July 13rd, 2005, disclosed publication number provided a kind of ion beam checkout gear in the Chinese patent application of " CN1638014 ", by improving wafer support to obtain the ion beam sectional drawing, to improve control to the ion injection of semiconductor wafer or similar material.Obviously, during using said method adjustment control technology, need to cooperate the improvement of wafer support, that is, need the improvement of cooperating equipment, complicated operation.
In the practice, ion implantation process detects and utilizes substrate (bare wafer) to carry out usually.Comprise being in the step that the semiconductor-based end execution ion implantation process of any stage detects in the manufacture of semiconductor: substrate is provided; Described substrate is carried out described ion implant operation, detect to utilize the alternative described semiconductor-based end of described substrate to carry out ion implantation process; Described substrate behind the ion implant operation is carried out ion implantation process to be detected.
Current, ion implantation process detects and adopts secondary ion mass spectroscopy (SIMS) test usually.In addition, in the actual production, finish arbitrary ion implantation process after, also need carry out wafer acceptability test (Wafer Acceptability Testing, WAT), experience SIMS and/or WAT judge that the ion of the correspondence of the described semiconductor-based end that lost efficacy injects control technology and need adjust.
Yet actual production is found, under the same process condition, there are differences between SIMS data and WAT data, and in other words, the ion implantation process that utilizes substrate to obtain detects data can not reflect truly that product ion injects the manufacturing effect of processing procedure.The manufacturing effect that how to reflect product ion injection processing procedure in the ion implantation process testing process truly becomes the subject matter that those skilled in the art face.
Summary of the invention
The invention provides a kind of ion injection test body, utilize described ion injection test body can reflect more truly in the ion implantation process testing process that product ion injects the manufacturing effect of processing procedure; The invention provides a kind of ion injection region mask board, have with formation and can reflect more truly that product ion injects the ion injection test body of the ion implanted region of processing procedure manufacturing effect; The invention provides a kind of ion injection test method, make the ion implantation process detecting operation can reflect more truly that product ion injects the manufacturing effect of processing procedure.
A kind of ion injection test body provided by the invention, corresponding to the different semiconductor-based ends, described test body comprises device region; Especially, described test body also comprises at least one in order to carry out the detection zone that ion implantation process detects, and described detection zone is positioned at outside the described device region.
Alternatively, the corresponding unique ion implantation process of each described detection zone; Alternatively, described detection zone and device region carry out the ion implant operation synchronously; Alternatively, each described detection zone does not have overlapping in same detection zone plane.
A kind of ion injection region mask board, described ion injection region mask board comprises component graphics, especially, described ion injection region mask board also comprises at least one in order to form the test pattern of detection zone in the ion injection test body, and described test pattern is positioned at outside the described component graphics.
Alternatively, there is not overlapping between each described test pattern.
A kind of ion injection test method comprises:
Semiconductor substrate is provided, and described semiconductor substrate has device region and at least one detection zone, and described detection zone is positioned at outside the described device region;
Determine ion implant operation times N;
Carry out the ion implant operation;
Utilizing described detection zone to carry out ion implantation process detects;
Clean the semiconductor substrate after the experience ion implantation process detects;
Described semiconductor substrate after cleaning is carried out ion implant operation, ion implantation process detection and cleaning operation in proper order, until finishing cleaning operation N time.
Alternatively, the corresponding unique ion implantation process of each described detection zone; Alternatively, described detection zone and device region carry out the ion implant operation synchronously; Alternatively, each described detection zone does not have overlapping in same detection zone plane.
A kind of ion injection test method comprises:
Semiconductor substrate is provided, and described semiconductor substrate has device region and at least one detection zone, and described detection zone is positioned at outside the described device region;
Determine ion implant operation times N;
Order is carried out N secondary ion implant operation;
Utilizing described detection zone to carry out ion implantation process detects.
Alternatively, the corresponding unique ion implantation process of each described detection zone; Alternatively, described detection zone and device region carry out the ion implant operation synchronously; Alternatively, each described detection zone does not have overlapping in same detection zone plane.
Compared with prior art, the present invention has the following advantages:
Ion injection test body provided by the invention by comprise at least one detection zone in difference at semiconductor-based the end, can directly utilize the described semiconductor-based end to carry out ion implantation process and detect, and becomes possibility so that improve the authenticity of ion implantation process detection; And can be by the separating of described detection zone and device region, reduce the damage that the device region that comprises is subjected at described the semiconductor-based end;
The optional mode of ion injection test body provided by the invention, by making the corresponding unique ion implantation process of each detection zone, promptly determine the number of detection zone according to the ion implantation process number, the authenticity that further raising ion implantation process is detected becomes possibility, and makes the accuracy that improves the ion implantation process detection become possibility;
Ion injection region mask board provided by the invention, by on the mask at the different semiconductor-based ends of correspondence, comprising at least one test pattern, can directly utilize the ion injection test body of acquisition to carry out the ion implantation process detection, become possibility so that improve the authenticity of ion implantation process detection; And can be by the separating of described test pattern and component graphics, reduce the damage that the device region that comprises in the ion injection test body that obtains is subjected to;
Ion injection test method provided by the invention, on different semiconductor substrates, form at least one detection zone by utilizing, detect to carry out ion implantation process, can directly utilize the semiconductor substrate that forms behind the detection zone to carry out ion implantation process and detect, become possibility so that improve the authenticity that ion implantation process detects; And can be by the separating of described detection zone and device region, reduce the damage that the device region that comprises in the described semiconductor substrate is subjected to;
The optional mode of ion injection test method provided by the invention, by each detection zone is only carried out unique ion implantation process, the authenticity that further raising ion implantation process is detected becomes possibility, and makes the accuracy that improves the ion implantation process detection become possibility.
Description of drawings
Fig. 1 a～1b is the ion injection test body plan structure schematic diagram of the explanation embodiment of the invention;
Fig. 2 a～2b is the ion injection region mask board plan structure schematic diagram of the explanation embodiment of the invention;
Fig. 3 is the schematic flow sheet of explanation ion injection test method first embodiment provided by the invention;
Fig. 4 is the schematic flow sheet of explanation ion injection test method second embodiment provided by the invention.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, be to be understood that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensive instruction for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work for those skilled in the art with advantage of the present invention.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer according to following explanation and claims advantages and features of the invention.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Ion injection test body provided by the invention, corresponding to the different semiconductor-based ends, described test body comprises device region; Described test body also comprises at least one in order to carry out the detection zone that ion implantation process detects, and described detection zone is positioned at outside the described device region.
The described semiconductor-based end be finished in the manufacture of semiconductor ion implant operation be positioned at any stage at goods.Described ion implant operation includes but not limited to the grid that comprises polysilicon is mixed with the operation that reduces its resistance, the operation that forms LDD and pocket type doped region and source/drain region.Each ion implantation process is finished the primary ions implant operation.The ion implantation process that each described detection zone is corresponding unique.
Described ion injection test body comprises device region and detection zone.Described device region is in order to make device; Described detection zone only carries out the ion implantation process detection in order to the substrate that substitutes in the conventional art.Described detection zone and device region carry out the ion implant operation synchronously; But, the ion implant operation that each described detection zone is corresponding unique.Each described detection zone can be positioned on the Different Plane, and each described detection zone does not have overlapping in same detection zone plane.The relative position of described detection zone and device region is unrestricted.Described detection zone 200 both can be positioned on the Cutting Road 140 of 100 of each device regions as shown in Figure 1a; Also can be shown in Fig. 1 b, each described detection zone 200 occupies the position of arbitrary described device region 100 jointly.
As example,, form and comprise ion implant operation that forms PLDD and the ion implant operation that forms NLDD in the step at the described semiconductor-based end for the LDD processing procedure; Described device region comprises core device region and input and output device district, and the ion implant operation of described formation PLDD and NLDD can comprise ion implant operation that forms core device region PLDD and NLDD and the ion implant operation that forms input and output device district PLDD and NLDD.The corresponding different ion implantation process of above-mentioned each ion implant operation.Each ion implant operation utilizes at least one detection zone to carry out ion implantation process and detects.The described ion injection test body that is corresponding LDD processing procedure should comprise at least four detection zones.
The concrete number of the detection zone of each ion implant operation correspondence is determined according to production and product requirement.As example, the number of each detection zone that comprises in the ion injection test body of corresponding above-mentioned LDD processing procedure is 2.
Utilize ion injection test body provided by the invention, both can directly utilize the described semiconductor-based end to carry out ion implantation process and detect, can make the authenticity that improves the ion implantation process detection become possibility; In addition, described detection zone distinguishes over described device region, can detect reduce the damage that the device region that comprises is subjected at described the semiconductor-based end carrying out ion implantation process.
By making the corresponding unique ion implantation process of each detection zone, the authenticity that further raising ion implantation process is detected becomes possibility, and makes the accuracy that improves the ion implantation process detection become possibility.
In the practice, for the wafer of 300 mm sizes, the size of described detection zone can be 100 microns of 10 microns～100 microns * of 10 microns *, as the 50*50 micron.By determining the size of described detection zone, can make the ion implantation process detecting operation not cause device region to damage becomes possibility at described the semiconductor-based end in, and can combine with the optimization of design size.
In addition, the present invention also provides a kind of ion injection region mask board, has with formation and can reflect more truly that product ion injects the ion injection test body of the ion implanted region of processing procedure manufacturing effect.
Described ion injection region mask board comprises component graphics, and especially, described ion injection region mask board also comprises at least one in order to form the test pattern of detection zone in the ion injection test body, and described test pattern is positioned at outside the described component graphics.
Described ion implantation process includes but not limited to the grid that comprises polysilicon is mixed with the operation that reduces its resistance, the operation that forms LDD and pocket type doped region and source/drain region.Each ion implantation process is finished the primary ions implant operation.The ion implantation process that each described detection zone is corresponding unique.Each described test pattern is in order to form at least one detection zone.
Comprise component graphics and test pattern in the described ion injection region mask board.Described test pattern is only carried out the ion implantation process detection in order to the substrate that substitutes in the conventional art.In the practice, utilize described test pattern and component graphics to carry out the ion implant operation synchronously; The corresponding unique ion implant operation of detection zone that utilizes each described test pattern to form.Do not have between each described test pattern and overlap.The relative position of described test pattern and component graphics is unrestricted.Described test pattern 220 both can be positioned at the interval 142 of 120 of component graphics shown in Fig. 2 a; Also can be shown in Fig. 2 b, each described test pattern 220 occupies the position of arbitrary described component graphics 120 jointly.
As example,, form and comprise ion implant operation that forms PLDD and the ion implant operation that forms NLDD in the step at the described semiconductor-based end for the LDD processing procedure; Described device region comprises core device region and input and output device district, and the ion implant operation of described formation PLDD and NLDD can comprise ion implant operation that forms core device region PLDD and NLDD and the ion implant operation that forms input and output device district PLDD and NLDD.The corresponding different ion implantation process of above-mentioned each ion implant operation.Each ion implant operation utilizes at least one detection zone to carry out ion implantation process and detects.The described ion injection test body that is corresponding LDD processing procedure should comprise at least four detection zones.But different described detection zones may utilize same test pattern acquisition in the ion injection region mask board.
The concrete number of described test pattern is determined according to production and product requirement.As example, the number of each test pattern that comprises in the ion injection region mask board of corresponding above-mentioned LDD processing procedure is 2.
Utilize ion injection region mask board provided by the invention, by comprising at least one test pattern on the mask of injecting test body in corresponding different ions, can directly utilize the ion injection test body of acquisition to carry out the ion implantation process detection, become possibility so that improve the authenticity of ion implantation process detection; And can be by the separating of described test pattern and component graphics, reduce the damage that the device region that comprises in the described ion injection test body that obtains is subjected to.
In the practice, for the wafer of 300 mm sizes, the size of described detection zone can be 100 microns of 10 microns～100 microns * of 10 microns *, as the 50*50 micron.Design size by the test pattern determining to comprise in the ion injection region mask board, and then the size of the interior detection zone of definite ion injection test body, can make the ion implantation process detecting operation not cause the interior device region damage of described ion injection test body to become possibility, and can combine with the optimization of design size.
The present invention also provides a kind of ion injection test method, makes the ion implantation process detecting operation can reflect more truly that product ion injects the manufacturing effect of processing procedure.
As shown in Figure 3, using method provided by the invention carries out the step that has that ion injects test and comprises:
Step 301: semiconductor substrate is provided, and described semiconductor substrate has device region and at least one detection zone, and described detection zone is positioned at outside the described device region.
Described semiconductor substrate be do not carry out as yet in the manufacture of semiconductor ion implant operation be positioned at any stage at goods.Described ion implant operation includes but not limited to the grid that comprises polysilicon is mixed with the operation that reduces its resistance, the operation that forms LDD and pocket type doped region and source/drain region.
Described device region is in order to make device; Described detection zone only carries out the ion implantation process detection in order to the substrate that substitutes in the conventional art.
Step 302: determine ion implant operation times N.
Each ion implantation process is finished the primary ions implant operation.
1,2,3 described ion implant operation times N is a natural number, as: ... etc.
Step 303: carry out the ion implant operation.
Described detection zone and device region carry out the ion implant operation synchronously; But, the ion implant operation that each described detection zone is corresponding unique.
As example, for the LDD processing procedure, described ion implant operation comprises ion implant operation that forms PLDD and the ion implant operation that forms NLDD; Described device region comprises core device region and input and output device district, and the ion implant operation of described formation PLDD can comprise ion implant operation that forms core device region PLDD and the ion implant operation that forms input and output device district PLDD.The corresponding different ion implantation process of above-mentioned each ion implant operation.Each ion implant operation utilizes at least one detection zone to carry out ion implantation process and detects.The described semiconductor substrate that is corresponding LDD processing procedure should comprise at least four detection zones.
The concrete number of the detection zone of each ion implant operation correspondence is determined according to production and product requirement.As example, the number of each detection zone that comprises in the semiconductor substrate of corresponding above-mentioned LDD processing procedure is chosen as 2.
Utilize ion injection test body provided by the invention, both can directly utilize the described semiconductor-based end to carry out ion implantation process and detect, can make the authenticity that improves the ion implantation process detection become possibility; In addition, described detection zone distinguishes over described device region, can detect reduce the damage that the device region that comprises is subjected at described the semiconductor-based end carrying out ion implantation process.
By making the corresponding unique ion implantation process of each detection zone, the authenticity that further raising ion implantation process is detected becomes possibility, and makes the accuracy that improves the ion implantation process detection become possibility.
In the practice, for the wafer of 300 mm sizes, the size of described detection zone can be 100 microns of 10 microns～100 microns * of 10 microns *, as the 50*50 micron.By determining the size of described detection zone, can make the ion implantation process detecting operation not cause device region to damage becomes possibility at described the semiconductor-based end in, and can combine with the optimization of design size.
Step 304: utilize described detection zone to carry out ion implantation process and detect.
Described ion implantation process detects and adopts secondary ion mass spectroscopy (SIMS) test usually.In addition, in the actual production, finish arbitrary ion implantation process after, also need carry out wafer acceptability test (Wafer Acceptability Testing, WAT), experience SIMS and/or WAT judge that the ion of the correspondence of the described semiconductor-based end that lost efficacy injects control technology and need adjust.
Step 305: clean the semiconductor substrate after the experience ion implantation process detects.
The cleaning solution that described cleaning operation is selected for use can be the solution of other removal surface contaminations in deionized water or the manufacture of semiconductor, as: hydrofluoric acid solution, SPM solution, SC1 series solution or ST-250 etc.Temperature when carrying out described cleaning operation can be room temperature, as 20～30 degrees centigrade.
Step 306: the described semiconductor substrate after cleaning is carried out ion implant operation, ion implantation process detection and cleaning operation in proper order, until finishing cleaning operation N time.
It should be noted that, carrying out between any two secondary ion implant operations, be included as execution after the ion implant operation and form operation in order to the rete of carrying ion implant operation, comprising: the deposition of described rete, leveling and cleaning operation.
At this moment, the described detection zone of each that relates to can be positioned on the Different Plane, and each described detection zone does not have overlapping in same detection zone plane.
As shown in Figure 4, the present invention also provides a kind of ion injection test method, comprising: step 401, semiconductor substrate is provided, and described semiconductor substrate has device region and at least one detection zone, and described detection zone is positioned at outside the described device region; Step 402 is determined ion implant operation times N; Step 403, order is carried out N secondary ion implant operation; Step 404 is utilized described detection zone to carry out ion implantation process and is detected.
Wherein, the corresponding unique ion implantation process of each described detection zone; Described detection zone and device region carry out the ion implant operation synchronously; Each described detection zone does not have overlapping in same detection zone plane.
1,2,3 described ion implant operation times N is a natural number, as: ... etc.
What need emphasize is that not elsewhere specified step all can use conventional methods acquisition, and concrete technological parameter is determined according to product requirement and process conditions.
Although the present invention has been described and has enough described embodiment in detail although describe by the embodiment at this, the applicant does not wish by any way the scope of claims is limited on this details.Other to those skilled in the art advantage and improvement are conspicuous.Therefore, relative broad range the invention is not restricted to represent and the specific detail of describing, equipment and the method and the illustrative example of expression.Therefore, can depart from these details and do not break away from the spirit and scope of the total inventive concept of applicant.
Claims (14)
1. ion injection test body, corresponding to the different semiconductor-based ends, described test body comprises device region; It is characterized in that: described test body also comprises at least one in order to carry out the detection zone that ion implantation process detects, and described detection zone is positioned at outside the described device region.
2. ion injection test body according to claim 1 is characterized in that: the ion implantation process that each described detection zone is corresponding unique.
3. ion injection test body according to claim 1 is characterized in that: described detection zone and device region carry out the ion implant operation synchronously.
4. ion injection test body according to claim 1 is characterized in that: each described detection zone does not have overlapping in same detection zone plane.
5. ion injection region mask board, described ion injection region mask board comprises component graphics, it is characterized in that: described ion injection region mask board also comprises at least one in order to form the test pattern of detection zone in the ion injection test body, and described test pattern is positioned at outside the described component graphics.
6. ion injection region mask board according to claim 5 is characterized in that: do not have overlapping between each described test pattern.
7. an ion injection test method is characterized in that, comprising:
Semiconductor substrate is provided, and described semiconductor substrate has device region and at least one detection zone, and described detection zone is positioned at outside the described device region;
Determine ion implant operation times N;
Carry out the ion implant operation;
Utilizing described detection zone to carry out ion implantation process detects;
Clean the semiconductor substrate after the experience ion implantation process detects;
Described semiconductor substrate after cleaning is carried out ion implant operation, ion implantation process detection and cleaning operation in proper order, until finishing cleaning operation N time.
8. ion injection test method according to claim 7 is characterized in that: the ion implantation process that each described detection zone is corresponding unique.
9. ion injection test method according to claim 7 is characterized in that: described detection zone and device region carry out the ion implant operation synchronously.
10. ion injection test method according to claim 7 is characterized in that: each described detection zone does not have overlapping in same detection zone plane.
11. an ion injection test method is characterized in that, comprising:
Semiconductor substrate is provided, and described semiconductor substrate has device region and at least one detection zone, and described detection zone is positioned at outside the described device region;
Determine ion implant operation times N;
Order is carried out N secondary ion implant operation;
Utilizing described detection zone to carry out ion implantation process detects.
12. ion injection test method according to claim 11 is characterized in that: the ion implantation process that each described detection zone is corresponding unique.
13. ion injection test method according to claim 11 is characterized in that: described detection zone and device region carry out the ion implant operation synchronously.
14. ion injection test method according to claim 11 is characterized in that: each described detection zone does not have overlapping in same detection zone plane.
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| CN2007100462161A CN101393906B (en) | 2007-09-17 | 2007-09-17 | Ion injection test body, ion injection region mask board and ion injection test method |
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| CN2007100462161A CN101393906B (en) | 2007-09-17 | 2007-09-17 | Ion injection test body, ion injection region mask board and ion injection test method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403245A (en) * | 2010-09-08 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for testing blocking capacity of photoresist layer to ion implantation |
| CN104157593B (en) * | 2013-05-14 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | dust detecting system and dust detection method |
| CN107316856A (en) * | 2016-04-26 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | Abnormal detection structure of ion implanting and preparation method thereof, and detection method |
| CN111883514A (en) * | 2020-06-17 | 2020-11-03 | 上海格易电子有限公司 | Test structure, wafer and manufacturing method of test structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4257825A (en) * | 1978-08-30 | 1981-03-24 | U.S. Philips Corporation | Method of manufacturing semiconductor devices having improvements in device reliability by thermally treating selectively implanted test figures in wafers |
| KR100699889B1 (en) * | 2005-12-29 | 2007-03-28 | 삼성전자주식회사 | Method of manufacturing semiconductor device including ion implanting under variable conditions |
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2007
- 2007-09-17 CN CN2007100462161A patent/CN101393906B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403245A (en) * | 2010-09-08 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Method for testing blocking capacity of photoresist layer to ion implantation |
| CN104157593B (en) * | 2013-05-14 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | dust detecting system and dust detection method |
| CN107316856A (en) * | 2016-04-26 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | Abnormal detection structure of ion implanting and preparation method thereof, and detection method |
| CN107316856B (en) * | 2016-04-26 | 2020-02-07 | 中芯国际集成电路制造(上海)有限公司 | Structure for detecting ion implantation abnormality, method for manufacturing same, and method for detecting ion implantation abnormality |
| CN111883514A (en) * | 2020-06-17 | 2020-11-03 | 上海格易电子有限公司 | Test structure, wafer and manufacturing method of test structure |
| CN111883514B (en) * | 2020-06-17 | 2022-07-01 | 上海格易电子有限公司 | Test structure, wafer and manufacturing method of test structure |
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| CN101393906B (en) | 2011-07-06 |
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