CN100576528C - The formation method of test base, test base mask and test base - Google Patents
The formation method of test base, test base mask and test base Download PDFInfo
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- CN100576528C CN100576528C CN200710040262A CN200710040262A CN100576528C CN 100576528 C CN100576528 C CN 100576528C CN 200710040262 A CN200710040262 A CN 200710040262A CN 200710040262 A CN200710040262 A CN 200710040262A CN 100576528 C CN100576528 C CN 100576528C
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Abstract
A kind of test base, described test base comprises at least one follow-on test unit series, comprise at least two follow-on test unit in the single described follow-on test unit series, described follow-on test unit comprises a test primitive and the auxiliary primitive of test, and described follow-on test unit series build-in test primitive and the auxiliary primitive of test join at interval; The described test primitive that different follow-on tests unit comprises in the same described follow-on test unit series is identical with the ratio of the size of the auxiliary primitive of described test, the size gradual change of the auxiliary primitive of described test primitive and described test between adjacent follow-on test unit.Can pass through to detect the residual of described passivation layer surface oxide, and then can obtain suitable process window, to suppress the generation of described passivation layer surface oxide residual phenomena.
Description
Technical field
The present invention relates to the ic manufacturing technology field, the formation method of particularly a kind of test base, test base mask and test base.
Background technology
In traditional integrated circuit technology, for guaranteeing the quality of product, all need detect after the many steps that relate in the execution technology, as the detection that the product after experience grinding or the etching process is carried out.Usually, adopt and on the semiconductor-based end, make test base, utilize described test base to replace described product to detect then.For making the described test base related process of analog equipment truly, described test base and described product are made synchronously.
About the structure of test base and how to utilize described test base to carry out technology and detect, finish the manufacturing of semiconductor device then, industry has been carried out multiple trial.On February 2nd, 2006 disclosed publication number for the Chinese patent application of " CN1729569 " and on April 25th, 2000 disclosed notification number for all providing a kind of test base in the United States Patent (USP) of " US6054721C " and having adopted the method, semi-conductor device manufacturing method of described test base.
Usually, described test base is not a complete device, but a kind of intermediate that replaces corresponding different process product to detect.The number of the described test base that comprises is at least one at semiconductor-based the end.As shown in Figure 1, described test base 10 comprises at least one test cell 20, comprises at least two test primitives 202 and at least two auxiliary primitives 204 of test in the described test cell 20, and the auxiliary primitive 204 of described test primitive 202 and described test joins at interval.Test base with chemical mechanical milling tech in the corresponding shallow channel isolation area forming process is an example, corresponding respectively test active area of the auxiliary primitive 204 of described test primitive 202 and described test and test shallow trench; Active area and shallow trench in described test active area and the corresponding different process product of test shallow trench difference.In the same described test cell 20, each described test active area is measure-alike, and the size of each described test shallow trench is also identical; In the different described test cells 20, the size of each described test active area can be identical or inequality, and the size of each described test shallow trench also can be identical or inequality.Behind the chemical mechanical planarization process of the shallow trench that experience has been filled,, can determine the manufacturing effect of product by described test cell 20 is detected.
In the actual production, the step that forms shallow channel isolation area comprises: form shallow trench on the semiconductor-based end; Fill spacer to described shallow trench; The described shallow trench behind the spacer is filled in leveling.The described semiconductor-based end, obtain after forming separator and passivation layer in turn at semiconductor substrate surface.
Yet, in the production practices, when the described shallow trench that stops as grinding with described passivation layer after layer is filled spacer with leveling, if have big difference by the size between the described passivation layer of described shallow channel isolation area isolation, easily cause larger-size described passivation layer surface oxide residual, cause in removing the process of described passivation layer, be difficult to guarantee the removal effect of described passivation layer, and then cause the relative design size of actual size of described active area to depart from the acquisition active area.How to suppress the generation of described passivation layer surface oxide residual phenomena, so that suitable process window to be provided, and then the optimised devices isolation performance becomes the subject matter that those skilled in the art endeavour to solve.
Summary of the invention
The invention provides a kind of test base, by detecting the residual oxide of passivation layer surface, obtaining suitable process window, and then can suppress the generation of described passivation layer surface oxide residual phenomena; The invention provides a kind of test base mask, can obtain by detecting the residual oxide of described passivation layer surface, and determine the test base of suitable process window; The invention provides a kind of formation method of test base, can obtain by detecting the residual oxide of described passivation layer surface, and determine the test base of suitable process window.
A kind of test base provided by the invention, described test base comprises at least one follow-on test unit series, comprise at least two follow-on test unit in the single described follow-on test unit series, described follow-on test unit comprises a test primitive and the auxiliary primitive of test, and described follow-on test unit series build-in test primitive and the auxiliary primitive of test join at interval; The described test primitive that different follow-on tests unit comprises in the same described follow-on test unit series is identical with the ratio of the size of the auxiliary primitive of described test, the size gradual change of the auxiliary primitive of described test primitive and described test between adjacent follow-on test unit.
Alternatively, series periphery, described follow-on test unit has peripheral pattern, has pattern filling in the described peripheral pattern; Alternatively, series is peripheral in same described follow-on test unit, and the peripheral pattern filling in each described follow-on test unit evenly distributes; Alternatively, the ratio of the auxiliary primitive size of test primitive or described test described in the different described follow-on tests unit series is inequality, and each described follow-on test unit series is peripheral, and the peripheral pattern filling in each described follow-on test unit evenly distributes; Alternatively, the ratio of the auxiliary primitive size of test primitive or described test described in the different described follow-on tests unit series is identical, and each described follow-on test unit series is peripheral, and the pattern density of the peripheral pattern filling in each described follow-on test unit is inequality; Alternatively, described test base also comprises at least two follow-on test unit series, and during the test primitive that comprises in the single described follow-on test unit series and the auxiliary primitive of test measure-alike, in the described follow-on test of difference unit series, the size of test primitive or the auxiliary primitive of test is inequality; Alternatively, the pattern density of the peripheral pattern filling in each described follow-on test unit is identical; To single follow-on test unit series, the pattern filling non-uniform Distribution that it is peripheral; Alternatively, the difference of the pattern density of the peripheral pattern of the product of the pattern density of described pattern filling and described test base simulation is less than 25%; Alternatively, the material that comprises in the material that comprises in the described pattern filling and the described test primitive is identical.
A kind of test base mask provided by the invention, described test base mask comprises at least one follow-on test unit series mask pattern, comprise at least two follow-on test unit mask patterns in the single described follow-on test unit series mask pattern, described follow-on test unit mask pattern comprises a test primitive mask pattern and the auxiliary primitive mask pattern of test, and described follow-on test unit series mask pattern build-in test primitive mask pattern and the auxiliary primitive mask pattern of test join at interval; The described test primitive mask pattern that different follow-on tests unit mask pattern comprises in the same described follow-on test unit series mask pattern is identical with the ratio of the size of the auxiliary primitive mask pattern of described test, the size gradual change of the auxiliary primitive mask pattern of described test primitive mask pattern and described test between adjacent follow-on test unit mask pattern.
Alternatively, series mask pattern periphery, described follow-on test unit has peripheral mask pattern, has the filling mask pattern in the described peripheral mask pattern; Alternatively, in series mask pattern periphery, same described follow-on test unit, the peripheral mask pattern of filling of each described follow-on test unit mask pattern evenly distributes; Alternatively, the ratio of test primitive mask pattern or the auxiliary primitive mask pattern size of described test is inequality described in the different described follow-on tests unit series mask pattern, and each series mask pattern periphery, described follow-on test unit, the peripheral mask pattern of filling of each described follow-on test unit mask pattern evenly distributes; Alternatively, the ratio of test primitive mask pattern or the auxiliary primitive mask pattern size of described test is identical described in the different described follow-on tests unit series mask pattern, and each series mask pattern periphery, described follow-on test unit, the pattern density of the peripheral filling of each described follow-on test unit mask pattern mask pattern is inequality; Alternatively, described test base mask also comprises at least two follow-on test unit series mask patterns, and during the test primitive mask pattern that comprises in the single described follow-on test unit series mask pattern and the auxiliary primitive mask pattern of test measure-alike, in the described follow-on test of difference unit series mask pattern, the size of test primitive mask pattern or the auxiliary primitive mask pattern of test is inequality; Alternatively, the pattern density of the peripheral filling of each described follow-on test unit mask pattern mask pattern is identical; Alternatively, to single follow-on test unit series mask pattern, the filling mask pattern non-uniform Distribution of its periphery; Alternatively, the pattern density of described filling mask pattern and the difference of the peripheral pattern pattern density of the mask of the product that utilizes test base simulation are less than 25%; Alternatively, the material that comprises in the material that comprises in the described filling mask pattern and the described test primitive mask pattern is identical.
The formation method of a kind of test base provided by the invention comprises:
On the semiconductor-based end, form test basic unit;
Utilize test base mask, graphical described test basic unit, in described test basic unit, to form at least one follow-on test unit matrix series, described follow-on test unit matrix series comprises at least two test primitives in order to form follow-on test unit series in the described follow-on test unit matrix series;
Deposition subtest basic unit, described subtest basic unit covers described follow-on test unit matrix series;
The described subtest of leveling basic unit to remove the subtest basic unit that covers described test primitive, forms test base.
Alternatively, utilize test base mask, after the graphical described test basic unit, in described test basic unit, also form pattern filling.
Compared with prior art, the present invention has the following advantages:
Test base provided by the invention, by increasing at least one follow-on test unit series, comprise at least two follow-on test unit in the single follow-on test unit series, described follow-on test unit comprises a test primitive and the auxiliary primitive of test, described follow-on test unit series build-in test primitive and the auxiliary primitive of test join at interval, the ratio of the auxiliary primitive size of the described test that the size of described test primitive is adjacent in the described follow-on test unit series is identical, the size gradual change of the auxiliary primitive of described test primitive and described test between adjacent follow-on test unit, but make and can include enough big described test primitive area of detection in the single described follow-on test unit series; In other words, when described test primitive is passivation layer, can make experience leveling process after, be that residual detection of passivation layer surface oxide becomes possibility to test primitive surface;
The optional mode of test base provided by the invention, by comprise at least two follow-on test unit series at described test base, and during the test primitive that comprises in the single described follow-on test unit series and the auxiliary primitive of test measure-alike, in the described follow-on test of difference unit series, the size of test primitive or the auxiliary primitive of test is inequality; Make that the grinding effect of described test primitive becomes possibility in testing product structure compact district and the rarefaction;
The optional mode of test base provided by the invention, by the peripheral pattern filling that increases in follow-on test unit in follow-on test unit series, adjust the peripheral pattern density of described follow-on test unit, and then can pass through analog equipment peripheral pattern density, realization has comprised the detection of the grinding effect of product peripheral pattern density influence, improves the authenticity that detects;
The optional mode of test base provided by the invention, utilization has the pattern filling of different pattern density in same follow-on test unit peripheral pattern, analog equipment peripheral pattern density neatly, realization has comprised the detection of the grinding effect of product peripheral pattern density influence, improves the authenticity that detects;
Test base mask provided by the invention, by increasing at least one follow-on test unit series mask pattern, comprise at least two follow-on test unit mask patterns in the single follow-on test unit series mask pattern, described follow-on test unit mask pattern comprises a test primitive mask pattern and the auxiliary primitive mask pattern of test, described follow-on test unit series mask pattern build-in test primitive mask pattern and the auxiliary primitive mask pattern of test join at interval, the ratio of the auxiliary primitive mask pattern size of described test that the size of described test primitive mask pattern is adjacent in the described follow-on test unit series mask pattern is identical, the size gradual change of the auxiliary primitive mask pattern of described test primitive mask pattern and described test between adjacent follow-on test unit mask pattern, but make and can include enough big described test primitive area of detection in the single described follow-on test unit series; In other words, when described test primitive is passivation layer, can make experience leveling process after, be that residual detection of passivation layer surface oxide becomes possibility to test primitive surface;
The optional mode of test base mask provided by the invention, by in described test base mask, comprising at least two follow-on test unit series mask patterns, and during the test primitive mask pattern that comprises in the single described follow-on test unit series mask pattern and the auxiliary primitive mask pattern of test measure-alike, in the described follow-on test of difference unit series mask pattern, the size of test primitive mask pattern or the auxiliary primitive mask pattern of test is inequality; Make that the grinding effect of described test primitive becomes possibility in testing product structure compact district and the rarefaction;
The optional mode of test base mask provided by the invention, fill mask pattern by peripheral the increasing of follow-on test unit mask pattern in follow-on test unit series mask pattern, adjust the peripheral pattern density of described follow-on test unit mask pattern, and then can pass through analog equipment peripheral pattern density, realization has comprised the detection of the grinding effect of product peripheral pattern density influence, improves the authenticity that detects;
The optional mode of test base mask provided by the invention, utilization has the filling mask pattern of different pattern density in same follow-on test unit mask pattern peripheral pattern, analog equipment peripheral pattern density neatly, realization has comprised the detection of the grinding effect of product peripheral pattern density influence, improves the authenticity that detects;
The formation method of test base provided by the invention, by increasing at least one follow-on test unit matrix series, comprise at least two test primitives in the single follow-on test unit matrix series, the size of described test primitive is identical with the ratio of the size at the interval of the described test primitive that is adjacent in the described follow-on test unit series, size gradual change between adjacent described test primitive, but make and can include enough big described test primitive area of detection in the single described follow-on test unit matrix series; In other words, when described test primitive is passivation layer, can make experience leveling process after, be that residual detection of passivation layer surface oxide becomes possibility to test primitive surface; And/or, by increasing at least two follow-on test unit matrix series, and during the test primitive that comprises in the single described follow-on test unit matrix series and test primitive interbody spacer measure-alike, in the described follow-on test of difference unit matrix series, the size of test primitive is inequality; Make that the grinding effect of described test primitive becomes possibility in testing product structure compact district and the rarefaction;
The optional mode of the formation method of test base provided by the invention, by forming pattern filling in follow-on test unit matrix periphery, adjust the peripheral pattern density of described test cell matrix, and then can pass through analog equipment peripheral pattern density, realize having comprised the inhomogeneity detection of grinding of product peripheral pattern density influence, improve the authenticity that detects.
Description of drawings
Fig. 1 is the structural representation of test base in the explanation prior art;
Fig. 2 is the structural representation of explanation test base first embodiment of the present invention;
Fig. 3 is the structural representation of explanation test base second embodiment of the present invention;
Fig. 4 is the structural representation of explanation test base the 3rd embodiment of the present invention;
Fig. 5 is the structural representation of explanation test base the 4th embodiment of the present invention;
Fig. 6 is the structural representation of explanation test base the 5th embodiment of the present invention;
Fig. 7 is the structural representation of explanation test base the 6th embodiment of the present invention;
Fig. 8 is the structural representation of explanation test base the 7th embodiment of the present invention;
Fig. 9 is the structural representation of explanation test base the 8th embodiment of the present invention;
Figure 10 is the structural representation of explanation test base mask first embodiment of the present invention;
Figure 11 is the structural representation of explanation test base mask second embodiment of the present invention;
Figure 12 is the structural representation of explanation test base mask the 3rd embodiment of the present invention;
Figure 13 is the structural representation of explanation test base mask the 4th embodiment of the present invention;
Figure 14 is the structural representation of explanation test base mask the 5th embodiment of the present invention;
Figure 15 is the structural representation of explanation test base mask the 6th embodiment of the present invention;
Figure 16 is the structural representation of explanation test base mask the 7th embodiment of the present invention;
Figure 17 is the structural representation of explanation test base mask the 8th embodiment of the present invention;
Figure 18 forms the schematic flow sheet of test base in the embodiment of the invention for explanation;
Figure 19 is the semiconductor-based bottom structure schematic diagram after basic unit is tested in the formation of the explanation embodiment of the invention;
Figure 20 for the graphical test basic unit of the explanation embodiment of the invention to form the semiconductor-based bottom structure schematic diagram after the follow-on test primitive matrix series;
Figure 21 for the graphical test basic unit of the explanation embodiment of the invention with formation follow-on test primitive matrix series after, and have the semiconductor-based bottom structure schematic diagram of even pattern filling;
Figure 22 for the graphical test basic unit of the explanation embodiment of the invention with formation follow-on test primitive matrix series after, and semiconductor-based bottom structure schematic diagram with different pattern filling density;
Figure 23 for the graphical test basic unit of the explanation embodiment of the invention to form the semiconductor-based bottom structure schematic diagram after at least two follow-on test primitive matrix series;
Figure 24 for the graphical test basic unit of the explanation embodiment of the invention with at least two follow-on test primitive matrix series of formation after, and have the semiconductor-based bottom structure schematic diagram of even pattern filling;
Figure 25 for the graphical test basic unit of the explanation embodiment of the invention with at least two follow-on test primitive matrix series of formation after, and semiconductor-based bottom structure schematic diagram with different pattern filling density;
Figure 26 for the explanation embodiment of the invention deposition subtest basic unit after semiconductor-based bottom structure schematic diagram;
Figure 27 for the explanation embodiment of the invention the formation test base after semiconductor-based bottom structure schematic diagram.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, be to be understood that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensive instruction for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work for those skilled in the art with advantage of the present invention.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer according to following explanation and claims advantages and features of the invention.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
In presents, product mean form zone to be detected be in any operation stage at goods; Term " pattern density " means on the same plane of product and test base to be determined in the zone, perhaps, determine in the zone that at product mask or test base mask the area that the material that zone to be detected comprises occupies is adjacent the ratio of the area that material that structure comprises occupies.Term " size " means the region parameter that obtains along any direction expansion back in the two dimensional surface, as length, width, surface area etc.
By preceding described, when the described shallow trench that stops as grinding with described passivation layer after layer is filled spacer with leveling, if have big difference by the size between the described passivation layer of described shallow channel isolation area isolation, easily cause larger-size described passivation layer surface oxide residual, cause in removing the process of described passivation layer with the acquisition active area, be difficult to guarantee the removal effect of described passivation layer, and then cause the relative design size of actual size of described active area to depart from.How to suppress the generation of described passivation layer surface oxide residual phenomena,, reduce the generation of described passivation layer surface oxide residual phenomena, become the subject matter that those skilled in the art endeavour to solve with the optimised devices isolation performance so that suitable process window to be provided.In the actual production, utilize the test base substitute products to carry out corresponding technology usually and detect.The present inventor thinks after analyzing, and utilizes test base, detects the residual direction of determining process window that becomes of described passivation layer surface oxide truly.
As shown in Figure 2, test base provided by the invention, comprise at least one follow-on test unit series 104, comprise at least two follow-on test unit 24 in the single described follow-on test unit series 104, described follow-on test unit 24 comprises a test primitive 202 and the auxiliary primitive 204 of test, the auxiliary primitive 204 of described follow-on test unit series 104 build-in test primitives 202 and test joins at interval, and the described test primitive 202 that different follow-on tests unit 24 comprises in the same described follow-on test unit series 104 is identical with the ratio of the size of the auxiliary primitive 204 of described test; The size gradual change of the auxiliary primitive 204 of 24 described test primitives 202 in adjacent follow-on test unit and described test.The ratio of the size of the auxiliary primitive 204 of described test primitive 202 and described test is determined according to product requirement and process conditions in the same described follow-on test unit 24.Described follow-on test unit series 104 can be ground residue in order to detect, and its build-in test primitive 202 is enough big with the auxiliary relative product of primitive 204 dimensional requirements of test, and described size is determined according to product requirement and process conditions.
As example, table 1 is the schematic of explanation follow-on test cellular construction.Table inside dimension unit is micron.
Table 1
| |
1 | 2 | 3 | 4 | 5 | 6 | 7 |
| Test primitive size | 5 | 10 | 20 | 50 | 100 | 200 | 400 |
| The auxiliary primitive size of test | 5 | 10 | 20 | 50 | 100 | 200 | 400 |
| Test primitive and the ratio of testing the size of assisting primitive | 50％ | 50％ | 50％ | 50％ | 50％ | 50％ | 50％ |
As shown in table 1, the number of described follow-on test unit series 104 is 1 in the test base, the number of the described follow-on test unit 24 that comprises in the described follow-on test unit series 104 is 7, when the auxiliary primitive of described test primitive 202 and described test 204 is measure-alike, be that described test primitive 202 is 50% o'clock with the ratio of testing the size of assisting primitive 204, the size of the auxiliary primitive 204 of the described test primitive 202 of gradual change and described test is respectively 5 microns, 10 microns, 20 microns, 50 microns, 100 microns, 200 microns and 400 microns.
As shown in Figure 3, also can have peripheral pattern 222 outside each described follow-on test unit series 104, also can have pattern filling 224 in the described peripheral pattern 222, the pattern density of described pattern filling 224 is determined according to product peripheral pattern density.
The formation of described peripheral pattern 222 is as its material that comprises, identical with the auxiliary primitive 204 of described test; The formation of described pattern filling 224 is as its material that comprises, identical with described test primitive 202.The size of described pattern filling 224 is determined according to product requirement and process conditions.As example, the figure of overlooking of described pattern filling 224 can be square, bar shaped, circle, triangle, prismatic or the shape etc. of feasible process arbitrarily, and the size of described pattern filling 224 can be the arbitrary value in the process conditions allowed band.As example, to 65nm technology, the length of side of described pattern filling 224 or diameter can be 70nm or 90nm etc.The distribution of described pattern filling 224, the pattern density of promptly described pattern filling 224 is definite according to the peripheral pattern density of product, as, the difference of the peripheral pattern density of the pattern density of described pattern filling 224 and product is less than 25%.The authenticity that the analog approximation degree direct influence of described pattern filling 224 and product peripheral pattern density detects.
As shown in Figure 4, the ratio of test primitive 202 or auxiliary primitive 204 sizes of described test is inequality described in the different described follow-on tests unit series 104, and each series 104 periphery, described follow-on test unit, each described follow-on test unit 24 peripheral pattern filling 224 evenly distributes; As shown in Figure 5, the ratio of test primitive 202 or auxiliary primitive 204 sizes of described test is identical described in the different described follow-on tests unit series 104, and outside each described follow-on test unit series 104, the pattern density of each described follow-on test unit 24 peripheral pattern filling 224 is inequality; Promptly in the first follow-on test unit series 116, the pattern filling 224 of each periphery, described follow-on test unit has the first pattern filling density; In the second follow-on test unit series 118, the pattern filling 224 of each periphery, described follow-on test unit has the second pattern filling density, and the described first pattern filling density is different with the second pattern filling density values.Utilize of the influence of described pattern filling 224 detectable product peripheral pattern density to manufacturing effect.The number of the follow-on test unit series 104 that described test base comprises is determined according to product requirement.As example, as shown in Figure 5, the number of the follow-on test unit series 104 that described test base comprises is 2, and the pattern density of corresponding pattern filling 224 is respectively 40% and 20%.
To arbitrary follow-on test unit 24, but its peripheral pattern filling 224 non-uniform Distribution.As example, the peripheral pattern density of utilizing described follow-on test unit 24 more accurately during the peripheral pattern density of analog equipment, adopts the rectangle partitioned mode, and number of partitions is 2, and correspondingly, each subregion is designated as first subregion 235 and second subregion 236 respectively; The peripheral subregion pattern density of the product of described first subregion 235 and second subregion, 236 correspondences is respectively 40% and at 20% o'clock, and the structure of test base as shown in Figure 6.
Especially, as shown in Figure 7, described test base comprises at least two follow-on test unit series 104, and comprise at least two follow-on test unit 24 in the single described follow-on test unit series 104, the test primitive 202 that the interval that comprises in the single described follow-on test unit series 104 joins is identical respectively with the size of the auxiliary primitive 204 of test; The size of the test primitive 202 that comprises in the different follow-on tests unit series 104 is inequality, assists the size of primitive 204 also inequality with the test that described test primitive 202 joins at interval.The size of the auxiliary primitive 204 of the number of the follow-on test unit 24 that comprises in the number of the described follow-on test unit series 104 that comprises in the described test base, the described follow-on test unit series 104 and described test primitive 202 and described test is determined according to product requirement and process conditions.
As example, table 2 is the schematic of explanation follow-on test unary system array structure.Table inside dimension unit is micron.
Table 2
| |
1 | 2 | 3 | 4 |
| Test |
2 | 2 | 0.12 | 0.08 |
| The auxiliary primitive size of test | 0.09 | 5 | 0.06 | 0.1 |
| The follow-on test number of |
10 | 10 | 10 | 10 |
| Test primitive and the ratio of testing the size of assisting primitive | 95.7％ | 28.6％ | 66.7％ | 44.4％ |
As shown in table 2, the number of described follow-on test unit series 104 is 4 in the test base, the number of the described follow-on test unit 24 that comprises in the described follow-on test unit series 104 is 10, as example, to being encoded to 1 described follow-on test unit series 104, the size of described test primitive 202 and the auxiliary primitive 204 of test is respectively 2 microns and 0.09 micron, the ratio of the size of the auxiliary primitive 204 of described test primitive 202 and described test is 95.7%, repeats no more the concrete structure of the described follow-on test unit series 104 that indicates with other codings.Utilize test base as shown in Figure 7, the grinding effect of described test primitive in detectable product structure compact district and the rarefaction; In other words, the grinding effect of the passivation layer of detectable product structure compact district and rarefaction.
At this moment, as shown in Figure 8,104 of the described follow-on test of difference unit series, each described follow-on test unit 24 peripheral pattern filling 224 density is identical; In addition, to arbitrary follow-on test unit series 104, but its peripheral pattern filling 224 non-uniform Distribution.As example, the peripheral pattern density of utilizing described follow-on test unit series more accurately during the peripheral pattern density of analog equipment, adopts the rectangle partitioned mode, and number of partitions is 4, and correspondingly, each subregion is designated as first subregion 251 and second subregion 252 respectively; The peripheral subregion pattern density of the product of described first subregion 251 and second subregion, 252 correspondences is respectively 40% and at 20% o'clock, and the structure of test base as shown in Figure 9.
As shown in figure 10, test base mask 11 provided by the invention, comprise at least one follow-on test unit series mask pattern 114, comprise at least two follow-on test unit mask patterns 14 in the single described follow-on test unit series 114, described follow-on test unit mask pattern 14 comprises a test primitive mask pattern 212 and the auxiliary primitive mask pattern 214 of test, the auxiliary primitive mask pattern 214 of described test primitive mask pattern 212 and test is measure-alike, described follow-on test unit series mask pattern 114 build-in test primitive mask patterns 212 and the auxiliary primitive mask pattern 214 of test join at interval, and the described test primitive mask pattern 212 that different follow-on tests unit mask pattern 14 comprises in the same described follow-on test unit series mask pattern 114 is identical with the ratio of the size of the auxiliary primitive mask pattern 214 of described test; The size gradual change of the auxiliary primitive mask pattern 214 of adjacent 14 described test primitive mask patterns 212 of follow-on test unit mask pattern and described test.The ratio of the size of the auxiliary primitive mask pattern 214 of described test primitive mask pattern 212 and described test is determined according to product requirement and process conditions in the same described follow-on test unit mask pattern 14.Described follow-on test unit series mask pattern 114 can grind residue in order to detect, its build-in test primitive mask pattern 212 is enough big with the auxiliary relative product of primitive mask pattern 214 dimensional requirements of test, and described size is determined according to product requirement and process conditions.
As shown in figure 11, also can have peripheral mask pattern 122 outside each described follow-on test unit series mask pattern 114, also can have the mask pattern 124 of filling in the described peripheral mask pattern 122, the pattern density of described filling mask pattern 124 is determined according to the pattern density of the peripheral mask pattern 122 of product.
The formation of described peripheral mask pattern 122 is as its material that comprises, identical with the auxiliary primitive mask pattern 214 of described test; The formation of described filling mask pattern 124 is as its material that comprises, identical with described test primitive mask pattern 212.
The size of described filling mask pattern 124 is determined according to product requirement and process conditions.As example, the figure of overlooking of described filling mask pattern 124 can be square, bar shaped, circle, triangle, prismatic or the shape etc. of feasible process arbitrarily, and the size of described filling mask pattern 124 can be the arbitrary value in the process conditions allowed band.As example, to 65nm technology, the length of side of described filling mask pattern 124 or diameter can be 70nm or 90nm etc.
The distribution of described filling mask pattern 124, the pattern density of promptly described filling mask pattern 124 is definite according to the peripheral pattern density of product mask, as, the difference of the peripheral pattern density of the pattern density of described filling mask pattern 124 and product mask is less than 25%.The authenticity that the analog approximation degree direct influence of described filling mask pattern 124 and product mask peripheral pattern density detects.
As shown in figure 12, the ratio of test primitive mask pattern 212 or auxiliary primitive mask pattern 214 sizes of described test is inequality described in the different described follow-on tests unit series mask pattern 114, and outside each described follow-on test unit series mask pattern 114, each described follow-on test unit mask pattern 14 peripheral mask pattern 124 of filling evenly distributes; As shown in figure 13, the ratio of test primitive mask pattern 212 or auxiliary primitive mask pattern 214 sizes of described test is identical described in the different described follow-on tests unit series mask pattern 114, and outside each described follow-on test unit series mask pattern 114, the pattern density of each described follow-on test unit mask pattern 14 peripheral filling mask pattern 124 is inequality; Promptly in first follow-on test unit series mask pattern 132, the filling mask pattern 124 of each periphery, described follow-on test unit has the first pattern filling density; In second follow-on test unit series mask pattern 134, the filling mask pattern 124 of each periphery, described follow-on test unit has the second pattern filling density, and the described first pattern filling density is different with the second pattern filling density values.Utilize of the influence of described filling mask pattern 124 detectable product peripheral pattern density to manufacturing effect.The number of the follow-on test unit series mask pattern 14 that described test base mask 11 comprises is determined according to product requirement.As example, as shown in figure 13, the number of the follow-on test unit series mask pattern 114 that described test base mask comprises is 2, and the pattern density of corresponding filling mask pattern 124 is respectively 20% and 40%.
To arbitrary follow-on test unit mask pattern 14, but filling mask pattern 124 non-uniform Distribution of its periphery.As example, the peripheral pattern density of utilizing described follow-on test unit mask pattern 14 more accurately during the peripheral pattern density of analog equipment, adopts the rectangle partitioned mode, and number of partitions is 2, correspondingly, each subregion is designated as first subregion 245 and second subregion 246 respectively; The peripheral subregion pattern density of the product of described first subregion 245 and second subregion, 246 correspondences is respectively 40% and at 20% o'clock, and the structure of test base as shown in figure 14.
Especially, as shown in figure 15, described test base mask comprises at least two follow-on test unit series mask patterns 114, and comprise at least two follow-on test unit mask patterns 14 in the single described follow-on test unit series mask pattern 114, the test primitive mask pattern 212 that the interval that comprises in the single described follow-on test unit series mask pattern 114 joins is identical respectively with the size of the auxiliary primitive mask pattern 214 of test; The size of the test primitive mask pattern 212 that comprises in the different follow-on tests unit series mask pattern 114 is inequality, assists the size of primitive mask pattern 214 also inequality with the test that described test primitive mask pattern 212 joins at interval.The number of the follow-on test unit mask pattern 14 that comprises in the number of the described follow-on test unit series mask pattern 114 that comprises in the described test base mask 11, the described follow-on test unit series mask pattern 114 and the size of described test primitive mask pattern 212 and the auxiliary primitive mask pattern 214 of described test are determined according to product requirement and process conditions.
Utilize test base mask as shown in figure 15, the grinding effect of described test primitive in detectable product structure compact district and the rarefaction; In other words, the grinding effect of the passivation layer of detectable product structure compact district and rarefaction.
At this moment, as shown in figure 16,114 of the described follow-on test of difference unit series mask patterns, the pattern density of each described follow-on test unit mask pattern 14 peripheral filling mask pattern 124 is identical; In addition, to arbitrary follow-on test unit series mask pattern 114, but filling mask pattern 124 non-uniform Distribution of its periphery.As example, the peripheral pattern density of utilizing described follow-on test unit series mask pattern 114 more accurately during the peripheral pattern density of analog equipment, adopts the rectangle partitioned mode, and number of partitions is 4, correspondingly, each subregion is designated as first subregion 261 and second subregion 262 respectively; The peripheral subregion pattern density of the product of described first subregion 261 and second subregion, 252 correspondences is respectively 40% and at 20% o'clock, and the structure of test base as shown in figure 17.
The step of using method formation test base provided by the invention comprises: form test basic unit on the semiconductor-based end; Utilize test base mask, graphical described test basic unit, in described test basic unit, to form at least one follow-on test unit matrix series, described follow-on test unit matrix series comprises at least two test primitives in order to form follow-on test unit series in the described follow-on test unit matrix series; Deposition subtest basic unit, described subtest basic unit covers described follow-on test unit matrix series; The described subtest of leveling basic unit to remove the subtest basic unit that covers described test primitive, forms test base.
As shown in figure 18, using the concrete steps that method provided by the invention forms test base comprises:
Step 1801: on the semiconductor-based end, form test basic unit.
As shown in figure 19, the described semiconductor-based end 30 mean experience part technology and need to make pending grinding and the rete of detecting operation at goods.
Described test basic unit 32 is the rete to be checked in the different characterization processes of product.
With the chemical mechanical milling tech in the corresponding shallow channel isolation area forming process is example, because described shallow channel isolation area forming process comprises: semiconductor substrate is provided; On described semiconductor substrate, form passivation layer and patterned resist layer; With described patterned resist layer is mask, the described passivation layer of etching; With the described passivation layer after the etching is hard mask, and the described semiconductor substrate of etched portions forms described shallow trench; For stopping layer, fill and grind described shallow trench with described passivation layer.Described semiconductor substrate for defined device active region and need finish shallow trench isolation from Semiconductor substrate.Described test basic unit 32 is described passivation layer.
Form the described operation of testing basic unit 32 and can utilize traditional handicraft acquisitions such as chemical vapor deposition (CVD).
Step 1802: utilize test base mask, graphical described test basic unit, in described test basic unit, to form at least one follow-on test unit matrix series, described follow-on test unit matrix series comprises at least two test primitives in order to form follow-on test unit series in the described follow-on test unit matrix series.
The operation of graphical described test basic unit and the manufacturing step of product carry out synchronously.The step of graphical described test basic unit comprises: form patterned resist layer in described test basic unit, described patterned resist layer has the test base mask figure; With described patterned resist layer is mask, the described test of etching basic unit.
The patterned resist layer of described formation comprises the steps such as coating, oven dry, photoetching, exposure and detection of described resist layer, related process can be used various traditional methods, the described resist layer of using can be selected any anticorrosive additive material that can be applicable in the semiconductor technology for use, all repeats no more at this.
Utilize test base mask, after the graphical described test basic unit, in described test basic unit, form at least one follow-on test unit matrix series 60, described follow-on test unit matrix series 60 is in order to form follow-on test unit series, as shown in figure 20, described follow-on test unit matrix series 60 comprises at least two test primitives 202.But the size gradual change of the test primitive 202 that comprises in the single described follow-on test unit matrix series 60, and equal measure-alike with the adjacent test primitive 202 that is positioned at the same side, described interval in the interval of respectively testing 202 of primitives.
Outside described follow-on test unit matrix series 60, still can have pattern filling, the formation of described pattern filling 224 is as its material that comprises, identical with described test primitive 202.
The size of described pattern filling 224 is determined according to product requirement and process conditions.As example, the figure of overlooking of described pattern filling 224 can be square, bar shaped, circle, triangle, prismatic or the shape etc. of feasible process arbitrarily, and the size of described pattern filling 224 can be the arbitrary value in the process conditions allowed band.As example, to 65nm technology, the length of side of described pattern filling 224 or diameter can be 70nm or 90nm etc.
The distribution of described pattern filling 224, the pattern density of promptly described pattern filling 224 is definite according to the peripheral pattern density of product, as, the difference of the peripheral pattern density of the pattern density of described pattern filling 224 and product is less than 25%.
As shown in figure 21, peripheral pattern filling 224 density of described follow-on test unit matrix series are identical; Perhaps, to arbitrary follow-on test unit matrix series 60, but its peripheral pattern filling 224 non-uniform Distribution.As example, the peripheral pattern density of utilizing described follow-on test unit matrix series more accurately during the peripheral pattern density of analog equipment, adopts the rectangle partitioned mode, and number of partitions is 2, and correspondingly, each subregion is designated as first subregion 72 and second subregion 74 respectively; The peripheral subregion pattern density of the product of described first subregion 72 and second subregion, 74 correspondences is respectively 20% and at 40% o'clock, and the structure of test base as shown in figure 22.
In addition, as shown in figure 23, the size of the test primitive 202 that comprises in the single described follow-on test unit matrix series 60 can be identical respectively, promptly tests primitive 224 and evenly distribute; The size of the test primitive 202 that comprises in the different follow-on tests unit matrix series 60 can be inequality.The number of the test primitive 202 that comprises in the number of described follow-on test unit matrix series 60, the described follow-on test unit matrix series 60 and the size of described test primitive 202 are determined according to product requirement and process conditions.
At this moment, outside described follow-on test unit matrix series 60, still can have pattern filling 224.As shown in figure 24,60 of the described follow-on test of difference unit matrix series, each described follow-on test unit matrix series 60 peripheral pattern filling 224 density is identical.
To arbitrary follow-on test unit matrix series 60, but its peripheral pattern filling 224 non-uniform Distribution.As example, the peripheral pattern density of utilizing described follow-on test unit matrix series 60 more accurately during the peripheral pattern density of analog equipment, adopts the rectangle partitioned mode, and number of partitions is 2, correspondingly, each subregion is designated as first subregion 82 and second subregion 84 respectively; The peripheral subregion pattern density of the product of described first subregion 82 and second subregion, 84 correspondences is respectively 20% and at 40% o'clock, and the structure of test base as shown in figure 25.
Step 2603: as shown in figure 26, deposition subtest basic unit 90, described subtest basic unit covers described follow-on test unit matrix series 60.
Structure in the product of the described subtest basic unit 90 correspondences structure corresponding with rete to be checked in the product is adjacent.With the chemical mechanical milling tech in the corresponding shallow channel isolation area forming process is example, and described subtest basic unit is the spacer rete of filling described shallow trench, and described spacer can be silicon dioxide.
Step 2604: as shown in figure 27, the described subtest of leveling basic unit 90 to remove the subtest basic unit 90 that covers described test primitive 202, forms test base.
For follow-on test unit matrix series, the auxiliary primitive of described subtest basic unit's formation test between the test primitive.
What need emphasize is that not elsewhere specified step all can use conventional methods acquisition, and concrete technological parameter is determined according to product requirement and process conditions.
Although the present invention has been described and has enough described embodiment in detail although describe by the embodiment at this, the applicant does not wish by any way the scope of claims is limited on this details.Other to those skilled in the art advantage and improvement are conspicuous.Therefore, relative broad range the invention is not restricted to represent and the specific detail of describing, equipment and the method and the illustrative example of expression.Therefore, can depart from these details and do not break away from the spirit and scope of the total inventive concept of applicant.
Claims (22)
1. test base, it is characterized in that: described test base comprises at least one follow-on test unit series, comprise at least two follow-on test unit in the single described follow-on test unit series, described follow-on test unit comprises a test primitive and the auxiliary primitive of test, and described follow-on test unit series build-in test primitive and the auxiliary primitive of test join at interval; The described test primitive that different follow-on tests unit comprises in the same described follow-on test unit series is identical with the ratio of the size of the auxiliary primitive of described test, the size gradual change of the auxiliary primitive of described test primitive and described test between adjacent follow-on test unit.
2. test base according to claim 1 is characterized in that: series periphery, described follow-on test unit has peripheral pattern, has pattern filling in the described peripheral pattern.
3. test base according to claim 2 is characterized in that: series is peripheral in same described follow-on test unit, and the peripheral pattern filling in each described follow-on test unit evenly distributes.
4. test base according to claim 2, it is characterized in that: the ratio of the auxiliary primitive size of test primitive or described test described in the different described follow-on tests unit series is inequality, and each described follow-on test unit series is peripheral, and the peripheral pattern filling in each described follow-on test unit evenly distributes.
5. test base according to claim 2, it is characterized in that: the ratio of the auxiliary primitive size of test primitive or described test described in the different described follow-on tests unit series is identical, and each described follow-on test unit series is peripheral, and the pattern density of the peripheral pattern filling in each described follow-on test unit is inequality.
6. test base according to claim 1, it is characterized in that: described test base also comprises at least two follow-on test unit series, and during the test primitive that comprises in the single described follow-on test unit series and the auxiliary primitive of test measure-alike, in the described follow-on test of difference unit series, the size of test primitive or the auxiliary primitive of test is inequality.
7. test base according to claim 6 is characterized in that: the pattern density of the peripheral pattern filling in each described follow-on test unit is identical.
8. according to claim 2,3 or 7 described test bases, it is characterized in that: single follow-on test unit series, the pattern filling non-uniform Distribution that it is peripheral.
9. test base according to claim 2 is characterized in that: the difference of the pattern density of the peripheral pattern of the product of the pattern density of described pattern filling and the simulation of described test base is less than 25%.
10. test base according to claim 2 is characterized in that: the material that comprises in the material that comprises in the described pattern filling and the described test primitive is identical.
11. test base mask, it is characterized in that: described test base mask comprises at least one follow-on test unit series mask pattern, comprise at least two follow-on test unit mask patterns in the single described follow-on test unit series mask pattern, described follow-on test unit mask pattern comprises a test primitive mask pattern and the auxiliary primitive mask pattern of test, and described follow-on test unit series mask pattern build-in test primitive mask pattern and the auxiliary primitive mask pattern of test join at interval; The described test primitive mask pattern that different follow-on tests unit mask pattern comprises in the same described follow-on test unit series mask pattern is identical with the ratio of the size of the auxiliary primitive mask pattern of described test, the size gradual change of the auxiliary primitive mask pattern of described test primitive mask pattern and described test between adjacent follow-on test unit mask pattern.
12. test base mask according to claim 11 is characterized in that: series mask pattern periphery, described follow-on test unit has peripheral mask pattern, has the filling mask pattern in the described peripheral mask pattern.
13. test base mask according to claim 12 is characterized in that: in series mask pattern periphery, same described follow-on test unit, the peripheral mask pattern of filling of each described follow-on test unit mask pattern evenly distributes.
14. test base mask according to claim 12, it is characterized in that: the ratio of test primitive mask pattern or the auxiliary primitive mask pattern size of described test is inequality described in the different described follow-on tests unit series mask pattern, and each series mask pattern periphery, described follow-on test unit, the peripheral mask pattern of filling of each described follow-on test unit mask pattern evenly distributes.
15. test base mask according to claim 12, it is characterized in that: the ratio of test primitive mask pattern or the auxiliary primitive mask pattern size of described test is identical described in the different described follow-on tests unit series mask pattern, and each series mask pattern periphery, described follow-on test unit, the pattern density of the peripheral filling of each described follow-on test unit mask pattern mask pattern is inequality.
16. test base mask according to claim 11, it is characterized in that: described test base mask also comprises at least two follow-on test unit series mask patterns, and during the test primitive mask pattern that comprises in the single described follow-on test unit series mask pattern and the auxiliary primitive mask pattern of test measure-alike, in the described follow-on test of difference unit series mask pattern, the size of test primitive mask pattern or the auxiliary primitive mask pattern of test is inequality.
17. test base mask according to claim 16 is characterized in that: the pattern density of the peripheral filling of each described follow-on test unit mask pattern mask pattern is identical.
18., it is characterized in that: to single follow-on test unit series mask pattern, the filling mask pattern non-uniform Distribution of its periphery according to claim 12,13 or 17 described test base masks.
19. test base mask according to claim 12 is characterized in that: the difference of the pattern density of described filling mask pattern and the peripheral pattern pattern density of the mask of the product that utilizes test base simulation is less than 25%.
20. test base mask according to claim 12 is characterized in that: the material that comprises in the material that comprises in the described filling mask pattern and the described test primitive mask pattern is identical.
21. the formation method of a test base is characterized in that, comprising:
On the semiconductor-based end, form test basic unit;
Utilize test base mask, graphical described test basic unit, in described test basic unit, to form at least one follow-on test unit matrix series, described follow-on test unit matrix series comprises at least two test primitives in order to form follow-on test unit series in the described follow-on test unit matrix series;
Deposition subtest basic unit, described subtest basic unit covers described follow-on test unit matrix series;
The described subtest of leveling basic unit to remove the subtest basic unit that covers described test primitive, forms test base.
22. the formation method of test base according to claim 21 is characterized in that: utilize test base mask, after the graphical described test basic unit, in described test basic unit, also form pattern filling.
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