CN102520578A - Testing photomask and application thereof - Google Patents
Testing photomask and application thereof Download PDFInfo
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- CN102520578A CN102520578A CN2011103554636A CN201110355463A CN102520578A CN 102520578 A CN102520578 A CN 102520578A CN 2011103554636 A CN2011103554636 A CN 2011103554636A CN 201110355463 A CN201110355463 A CN 201110355463A CN 102520578 A CN102520578 A CN 102520578A
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Abstract
The invention relates to a testing photomask, which is used for testing the relation between the flatness of a current metal layer and feature density. The layout of the testing photomask consists of n multiplied by m areas, each area has different feature density, and consists of an isolated line, a sub-resolution assistant feature, a resolvable assistant feature, semi-dense lines, dense lines and a redundant feature array, and the sub-resolution assistant feature and the resolvable assistant feature are on both sides of the isolated line. The invention uses the testing photomask with a metal layer redundancy fill application function, a photoetching process window expansion function and a photoetching process defect monitoring function to effectively expand the photoetching process window, improve the flatness of the chemically and mechanically polished local area of the metal layer, increase the efficiency of the development of the metal layer redundancy fill design and the chemical and mechanical metal layer polishing process and the efficiency of chemically and mechanically polished metal layer flatness prediction and needed feature density adjustment, and reduces the cost of the testing photomask used in the photoetching process.
Description
Technical field
The present invention relates to semiconductor applications, particularly a kind of test light mask plate and application thereof.
Background technology
Along with the integrated level of semi-conductor chip improves constantly, transistorized characteristic dimension is constantly dwindled.Enter into after 130 nm technology node, receive the restriction of the high-ohmic of aluminium, copper-connection substitution of Al interconnection gradually becomes metal interconnected main flow.Because the dry etch process of copper is difficult for realizing that the method for making of copper conductor can not obtain through etching sheet metal as aluminum conductor.The method for making of the copper conductor that extensively adopts now is the embedding technique that is called Damascus technics.This technology low k value dielectric layer of deposition at first on silicon chip then through photoetching be etched in and form metallic channel in the dielectric layer, continues follow-up layer metal deposition and metal level cmp and processes plain conductor.
Surface flatness behind the cmp and metallic pattern density relationship are close.In order to reach uniform grinding effect, require the metallic pattern density on the silicon chip even as far as possible.And the metallic pattern density of product design usually can not satisfy the requirement of cmp uniformity coefficient.The method that solves is to fill redundant metal at the white space of domain to make domain pattern density homogenising.
Traditional method is to utilize the artificial uniformity coefficient that redundant metal improves the domain pattern density of filling.This method efficient is not high.Advanced method is to utilize simulation softward to improve to fill redundant metallic pattern efficiency of design.But existing method is aspect the efficient of development of metallic stratification mechanical milling tech; And aspect the flatness behind prediction metal level cmp under fast-changing client's product pattern density situation; Cost is higher, and efficient also can satisfy design and demands of developing not to the utmost.
In client's product pattern density, under given live width condition, the depth of focus process window of various bargraphss has following relationship: the depth of focus of intensive lines is greater than the depth of focus of half intensive lines, and the depth of focus of half intensive lines is greater than the depth of focus of isolated lines.Utilize this relation, increase the process window that auxiliary pattern can enlarge isolated lines on isolated lines next door.Do not increase extra figure again in order to enlarge process window, (sub-resolution assistant feature, SRAF), the Subresolution auxiliary pattern does not form figure in photoresist can in photomask, to increase the Subresolution auxiliary pattern usually.
In order to reduce the negative effect that extra coupling capacitance brings device, to reduce the filling quantity of redundant metal as far as possible and keep main graphic big as far as possible when metal filled in that design is redundant with redundant intermetallic distance.Bigger main graphic and redundant intermetallic cause the pattern density of regional area inhomogeneous apart from meeting, influence the regional area flatness of metal level cmp.Auxiliary pattern can enlarge the lithographic process window of isolated lines, improves the regional area flatness of metal level cmp, but can cause bigger extra intermetallic coupling capacitance.
Summary of the invention
The purpose of this invention is to provide a kind of test light mask plate and application thereof; With enlarge lithographic process window effectively, improve to fill redundant metallic pattern efficiency of design, the efficient of metal level chemical mechanical milling tech exploitation and prediction be through the efficient of metal level flatness behind the cmp and the pattern density adjustment that needs, reduces the cost of test light mask.
Technical solution of the present invention is a kind of test light mask plate; Be used to test when the flatness of layer metal level and the relation of pattern density; The domain of said test light mask plate is made up of nxm zone; Each said zone has different patterns density; Each zone comprises Subresolution auxiliary pattern and distinguishable rate auxiliary pattern, half intensive lines, intensive lines and the redundant pattern array of isolated lines, isolated lines both sides, and wherein n is the integer more than or equal to 1, and m is the integer more than or equal to 1.
As preferably: the lines live width of said isolated lines, half intensive lines and intensive lines is more than or equal to the minimum distinguishable live width when layer metal level.
As preferably: said redundant pattern array is made up of the redundant pattern of same size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
As preferably: said redundant pattern array is made up of the redundant pattern of different size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
The present invention also provides a kind of application of above-mentioned test light mask plate, may further comprise the steps:
Obtain the pattern density in nxm zone in the said optical mask plate domain and the pattern density gradient of adjacent area;
On substrate, deposit low dielectric constant films;
On low dielectric constant films, apply photoresist, photoetching forms the figure of test light mask plate;
Through measurement, obtain Subresolution auxiliary pattern and distinguishable rate auxiliary pattern information to the influence of lines live width to various lines live widths in the photoresist;
The etching low dielectric constant film forms corresponding to the metallic channel of half intensive lines and intensive lines, corresponding to the redundant metallic channel of redundant pattern with corresponding to the redundant metallic channel of the auxiliary pattern of distinguishable rate auxiliary pattern;
At said structure surface deposition metal;
Cmp forms the metal level of being made up of the redundant metal of lead metal, redundant metal and auxiliary pattern;
Measure the flatness of nxm zone, set up the process menu of metal level cmp through the metal level behind the cmp;
Density gradient and each zone of density, adjacent area that obtains nxm zone is through concerning between the flatness behind the cmp.
As preferably: the lines live width of said isolated lines, half intensive lines and intensive lines is more than or equal to the minimum distinguishable live width when layer metal level.
As preferably: said redundant pattern array is made up of the redundant pattern of same size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
As preferably: said redundant pattern array is made up of the redundant pattern of different size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
Compared with prior art; The present invention has the redundant metal filled application function of metal level, enlarges the test light mask that produces the defective function in lithographic process window function and the monitoring photoetching technology through use; Enlarge lithographic process window effectively and improve the regional area flatness of metal level cmp, improve the efficient of redundant metal filled design of metal level and the exploitation of metal level chemical mechanical milling tech effectively; Improve prediction effectively through the efficient of the metal level flatness behind the cmp, can reduce the cost of institute's use test photomask in the photoetching process module simultaneously with the pattern density adjustment that needs.
Description of drawings
Fig. 1 is the domain synoptic diagram of test light mask plate of the present invention.
Fig. 2 is the synoptic diagram of test light mask plate of the present invention.
Fig. 3 a is the redundant pattern array synoptic diagram of same size of the present invention.
Fig. 3 b is the redundant pattern array synoptic diagram of different size of the present invention.
Fig. 4 is the sectional view behind the metal level cmp in the application of test light mask plate of the present invention.
Embodiment
The present invention below will combine accompanying drawing to do further to detail:
A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
Secondly, the present invention utilizes synoptic diagram to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
See also shown in Figure 1; In the present embodiment; Be used to test when the flatness of layer metal level and the relation of pattern density; The domain of said test light mask plate is made up of nxm zone (D11, D12, D21, D22...Dnm); Each said zone has different patterns density, and each zone comprises Subresolution auxiliary pattern 11 and distinguishable rate auxiliary pattern 12, partly intensive lines 2, intensive lines 3 and the redundant pattern array 4 of isolated lines 1, isolated lines both sides, and said half intensive lines 2 and intensive lines 3 are as the monitoring figure that produces defective in the monitoring photoetching technology.The Subresolution auxiliary pattern 11 of said isolated lines 1 both sides is used to enlarge lithographic process window with distinguishable rate auxiliary pattern 12 and improves the regional area flatness of metal level cmp, and the lines live width of said isolated lines 1, half intensive lines 2 and intensive lines 3 is more than or equal to the minimum distinguishable live width when layer metal level.Shown in Fig. 3 a and Fig. 3 b, said redundant pattern array 4 is made up of the redundant pattern of same size or different size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
The application of above-mentioned test light mask plate may further comprise the steps:
Obtain the pattern density in nxm zone in the said optical mask plate domain and the pattern density gradient of adjacent area;
On substrate, deposit low dielectric constant films;
On low dielectric constant films, apply photoresist, photoetching forms the figure of test light mask plate;
Through measurement, set up Subresolution auxiliary pattern and distinguishable rate auxiliary pattern database to the influence of lines live width to various lines live widths in the photoresist;
The etching low dielectric constant film forms corresponding to the metallic channel of half intensive lines and intensive lines, corresponding to the redundant metallic channel of redundant pattern with corresponding to the redundant metallic channel of the auxiliary pattern of distinguishable rate auxiliary pattern;
At said structure surface deposition metal;
Cmp forms the metal level of being made up of the redundant metal of lead metal, redundant metal and auxiliary pattern, and the sectional view after the grinding is as shown in Figure 4, is specially the redundant metal 8 of low dielectric constant films 5, lead metal 6, redundant metal 7 and auxiliary pattern;
Measure the flatness of nxm zone, set up the process menu of metal level cmp through the metal level behind the cmp;
Density gradient and each zone of density, adjacent area of setting up nxm zone is through relationship database between the flatness behind the cmp.
According to the pattern density gradient of the pattern density and the adjacent area of client's product, utilize above-mentioned database prediction through metal level flatness behind the cmp and the redundant metal filled design of making the pattern density adjustment.
The present invention has the redundant metal filled application function of metal level, enlarges the test light mask that produces the defective function in lithographic process window function and the monitoring photoetching technology through use; Improve the efficient of redundant metal filled design of metal level and the exploitation of metal level chemical mechanical milling tech effectively; Enlarge lithographic process window effectively and improve the regional area flatness of metal level cmp; Improve prediction effectively through the efficient of the metal level flatness behind the cmp, can reduce the cost of institute's use test photomask in the photoetching process module simultaneously with the pattern density adjustment that needs.
The above is merely preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to the covering scope of claim of the present invention.
Claims (8)
1. test light mask plate; Be used to test when the flatness of layer metal level and the relation of pattern density; It is characterized in that: the domain of said test light mask plate is made up of nxm zone, and each said zone has different patterns density, and each zone comprises Subresolution auxiliary pattern and distinguishable rate auxiliary pattern, half intensive lines, intensive lines and the redundant pattern array of isolated lines, isolated lines both sides; Wherein n is the integer more than or equal to 1, and m is the integer more than or equal to 1.
2. test light mask plate according to claim 1 is characterized in that: the lines live width of said isolated lines, half intensive lines and intensive lines is more than or equal to the minimum distinguishable live width when layer metal level.
3. test light mask plate according to claim 1 is characterized in that: said redundant pattern array is made up of the redundant pattern of same size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
4. test light mask plate according to claim 1 is characterized in that: said redundant pattern array is made up of the redundant pattern of different size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
5. the application of a test light mask plate according to claim 1 is characterized in that, may further comprise the steps:
Obtain the pattern density in nxm zone in the said optical mask plate domain and the pattern density gradient of adjacent area;
On substrate, deposit low dielectric constant films;
On low dielectric constant films, apply photoresist, photoetching forms the figure of test light mask plate;
Through measurement, obtain Subresolution auxiliary pattern and distinguishable rate auxiliary pattern information to the influence of lines live width to various lines live widths in the photoresist;
The etching low dielectric constant film forms corresponding to the metallic channel of half intensive lines and intensive lines, corresponding to the redundant metallic channel of redundant pattern with corresponding to the redundant metallic channel of the auxiliary pattern of distinguishable rate auxiliary pattern;
At said structure surface deposition metal;
Cmp forms the metal level of being made up of the redundant metal of lead metal, redundant metal and auxiliary pattern;
Measure the flatness of nxm zone, set up the process menu of metal level cmp through metal level behind the cmp;
Density gradient and each zone of density, adjacent area that obtains nxm zone is through concerning between the flatness behind the cmp.
6. the application of test light mask plate according to claim 5 is characterized in that: the lines live width of said isolated lines, half intensive lines and intensive lines is more than or equal to the minimum distinguishable live width when layer metal level.
7. the application of test light mask plate according to claim 5 is characterized in that: said redundant pattern array is made up of the redundant pattern of same size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
8. the application of test light mask plate according to claim 5 is characterized in that: said redundant pattern array is made up of the redundant pattern of different size, and the live width of redundant pattern is more than or equal to the minimum distinguishable live width when layer metal level.
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| CN 201110355463 CN102520578B (en) | 2011-11-10 | 2011-11-10 | Testing photomask and application thereof |
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| CN 201110355463 CN102520578B (en) | 2011-11-10 | 2011-11-10 | Testing photomask and application thereof |
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| CN102520578B CN102520578B (en) | 2013-12-18 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199057A (en) * | 2013-03-14 | 2013-07-10 | 上海华力微电子有限公司 | Optical mask applied to dual damascene metal interconnection process |
| CN104239612A (en) * | 2014-08-27 | 2014-12-24 | 上海华力微电子有限公司 | Method for improving laser annealing heat distribution |
| CN105446072A (en) * | 2014-08-26 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | A mask and a forming method thereof |
| CN105988285A (en) * | 2015-01-30 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Test mask and testing method |
| CN107240782A (en) * | 2016-03-28 | 2017-10-10 | 克洛纳测量技术有限公司 | The induction element of antenna and the method for manufacturing such induction element |
| CN109711006A (en) * | 2018-12-11 | 2019-05-03 | 上海华力微电子有限公司 | A kind of redundant pattern adding method |
| CN110231753A (en) * | 2019-07-10 | 2019-09-13 | 德淮半导体有限公司 | Mask and its configuration method, lithography system and photolithography method |
| CN110491776A (en) * | 2019-08-09 | 2019-11-22 | 长江存储科技有限责任公司 | A kind of manufacturing method of mask and semiconductor devices |
| CN112334839A (en) * | 2019-05-30 | 2021-02-05 | 埃斯科绘图成像有限责任公司 | Process and apparatus for automatically measuring density of photopolymer printing plates |
| CN113204166A (en) * | 2021-04-21 | 2021-08-03 | 华虹半导体(无锡)有限公司 | Astigmatism testing mask and astigmatism detecting method for photoetching machine |
| CN113506790A (en) * | 2021-09-08 | 2021-10-15 | 北京芯愿景软件技术股份有限公司 | Chip, preparation method thereof and electronic equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290923A (en) * | 2007-04-17 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Test base, test base mask and forming method of test base |
| US20090181330A1 (en) * | 2008-01-14 | 2009-07-16 | International Business Machines Corporation | Methods for forming a composite pattern including printed resolution assist features |
| CN102087468A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Photomask |
-
2011
- 2011-11-10 CN CN 201110355463 patent/CN102520578B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290923A (en) * | 2007-04-17 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Test base, test base mask and forming method of test base |
| US20090181330A1 (en) * | 2008-01-14 | 2009-07-16 | International Business Machines Corporation | Methods for forming a composite pattern including printed resolution assist features |
| CN102087468A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Photomask |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199057A (en) * | 2013-03-14 | 2013-07-10 | 上海华力微电子有限公司 | Optical mask applied to dual damascene metal interconnection process |
| CN103199057B (en) * | 2013-03-14 | 2015-04-08 | 上海华力微电子有限公司 | Optical mask applied to dual damascene metal interconnection process |
| CN105446072A (en) * | 2014-08-26 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | A mask and a forming method thereof |
| CN105446072B (en) * | 2014-08-26 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | Mask and forming method thereof |
| CN104239612A (en) * | 2014-08-27 | 2014-12-24 | 上海华力微电子有限公司 | Method for improving laser annealing heat distribution |
| CN105988285B (en) * | 2015-01-30 | 2019-09-27 | 中芯国际集成电路制造(上海)有限公司 | Test mask and test method |
| CN105988285A (en) * | 2015-01-30 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Test mask and testing method |
| CN107240782A (en) * | 2016-03-28 | 2017-10-10 | 克洛纳测量技术有限公司 | The induction element of antenna and the method for manufacturing such induction element |
| CN107240782B (en) * | 2016-03-28 | 2021-09-03 | 克洛纳测量技术有限公司 | Guide element for an antenna and method for producing such a guide element |
| CN109711006A (en) * | 2018-12-11 | 2019-05-03 | 上海华力微电子有限公司 | A kind of redundant pattern adding method |
| CN112334839A (en) * | 2019-05-30 | 2021-02-05 | 埃斯科绘图成像有限责任公司 | Process and apparatus for automatically measuring density of photopolymer printing plates |
| CN112334839B (en) * | 2019-05-30 | 2023-10-31 | 埃斯科绘图成像有限责任公司 | Process and apparatus for automatically measuring photopolymer printing plate density |
| US11867711B2 (en) | 2019-05-30 | 2024-01-09 | Esko-Graphics Imaging Gmbh | Process and apparatus for automatic measurement of density of photopolymer printing plates |
| CN110231753A (en) * | 2019-07-10 | 2019-09-13 | 德淮半导体有限公司 | Mask and its configuration method, lithography system and photolithography method |
| CN110491776A (en) * | 2019-08-09 | 2019-11-22 | 长江存储科技有限责任公司 | A kind of manufacturing method of mask and semiconductor devices |
| CN113204166A (en) * | 2021-04-21 | 2021-08-03 | 华虹半导体(无锡)有限公司 | Astigmatism testing mask and astigmatism detecting method for photoetching machine |
| CN113204166B (en) * | 2021-04-21 | 2023-12-01 | 华虹半导体(无锡)有限公司 | Astigmatic test mask and astigmatic detection method of photoetching machine |
| CN113506790A (en) * | 2021-09-08 | 2021-10-15 | 北京芯愿景软件技术股份有限公司 | Chip, preparation method thereof and electronic equipment |
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