CN110231753A - Mask and its configuration method, lithography system and photolithography method - Google Patents
Mask and its configuration method, lithography system and photolithography method Download PDFInfo
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- CN110231753A CN110231753A CN201910617337.XA CN201910617337A CN110231753A CN 110231753 A CN110231753 A CN 110231753A CN 201910617337 A CN201910617337 A CN 201910617337A CN 110231753 A CN110231753 A CN 110231753A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
This disclosure relates to a kind of mask and its configuration method, lithography system and photolithography method.The mask includes: the first mask pattern and the second mask pattern.First mask pattern corresponds to the pass the target pattern that photoetching process will be formed on wafer, which includes the first flagpole pattern of one or more extended in a first direction.Second mask pattern includes the second flagpole pattern of one or more extended along the second direction being at an angle of with first direction, and the second mask pattern corresponds to the pass the redundant pattern that photoetching process will be formed on wafer.
Description
Technical field
This disclosure relates to semiconductor field, it particularly relates to a kind of lithography system and photolithography method and for this be
The mask and its configuration method of system and method.
Background technique
Photoetching process is the important link in IC design and manufacturing process.In some photoetching processes, light source hair
The light penetrated is directed into mask.The mask pattern arranged on mask enables only a fraction light through mask.Through mask
Light be then projected on wafer by the lens of referred to as projecting lens (or object lens) so that the photosensitive layer coated on wafer
Specific part is exposed.By photoetching process, mask pattern can be transferred on the photosensitive layer on wafer.Photosensitive layer is by photoetching
Glue is formed.Photochemical reaction occurs for the part photoresist being exposed on photosensitive layer, allows the part easily developed
Solution dissolution, to form target pattern on a photoresist layer.Mask pattern on target pattern and mask has corresponding relationship.With
Afterwards, the target pattern on photosensitive layer further can be transferred to by other layers on wafer by etching technics, then to crystalline substance
Justify and the techniques such as be doped, anneal, to form desired integrated circuit layout on wafer.
Accurate integrated circuit proposes higher requirement to the precision of photoetching process.What is generated in photoetching process is subtle
Deviation may cause the appreciable error in finally obtained semiconductor product, and may cause the decline of whole yield.For example, light
May be to the fuel factor that each section of optical module used in photoetching process (for example, projecting lens) generates it is non-uniform,
This non-uniform fuel factor will make these optical modules generate undesirable distortion, to introduce thermal aberration.Thermal aberration will make
The target pattern distortion formed on a photoresist layer by these optical modules.It is therefore desirable to be able to make light to the heat of projecting lens
Effect homogenization.
In addition, it is also desirable to which the pattern by photoetching process formation is equally distributed on wafer.Crystalline substance with the pattern
Circle will receive further physically and/or chemically processing (such as annealing etc.) in the subsequent process.When the pattern distribution on wafer
When uneven, physical/chemical on wafer everywhere differs greatly, it may be required that applies different objects to different piece
Reason/chemical treatment or the processing of same physical/chemical bring unexpected result to different piece.This is unfavorable for simplifying these
The configuration of physical/chemical processing.Applying different physical/chemical processing to the different piece on wafer is complicated and valuableness,
Even it is difficult to realize.Therefore, it is desirable to form equally distributed pattern on wafer by photoetching process.
It is, therefore, desirable to provide a kind of new technology is above-mentioned in the prior art one or more to solve the problems, such as.
Summary of the invention
One purpose of the disclosure is the thermal aberration introduced by projecting lens reduced in photoetching process.
Another object of the present disclosure is that equally distributed pattern is formed on wafer.
According to the disclosure in a first aspect, providing a kind of mask, which includes: that the first mask pattern and second are covered
Mould pattern.First mask pattern corresponds to the pass the target pattern that photoetching process will be formed on wafer, wherein the first mask artwork
Case includes the first flagpole pattern of one or more extended in a first direction；Second mask pattern includes edge and first direction angulation
The second flagpole pattern of one or more that the second direction of degree extends, and the second mask pattern corresponds to the pass photoetching process and incites somebody to action
The redundant pattern formed on wafer.
According to the second aspect of the disclosure, a kind of method for configuring mask is provided, this method comprises: on mask
It forms the first mask pattern and forms the second mask pattern on mask.First mask pattern corresponds to the pass photoetching process will
The target pattern formed on wafer, the first mask pattern include the first bar graph of one or more extended in a first direction
Shape；Second mask pattern includes the second flagpole pattern of one or more extended along the second direction being at an angle of with first direction,
And the second mask pattern corresponds to the pass the redundant pattern that photoetching process will be formed on wafer.
According to the third aspect of the disclosure, a kind of lithography system is provided, which includes: light source, is configured as
Transmitting is used for the light of photoetching process；First optical module is configured as the light that light source emits being directed to mask；According to retouching above
The state or mask according to disclosure any embodiment is configured as at least part through the light；And projection
Lens are configured as projecting described at least part of the light through mask to wafer.
According to the fourth aspect of the disclosure, a kind of photolithography method is provided, this method comprises: will using the first optical module
The light of light source transmitting is directed to according to the described above or mask according to disclosure any embodiment；And guidance penetrates
The light of mask is projected by projecting lens to wafer.
One according to an embodiment of the present disclosure by the second mask pattern on mask the advantage is that can to penetrate
Energy distribution homogenization of the diffraction light of mask on projecting lens, to reduce what projecting lens was generated by nonuniform heating
Thermal aberration.
It is another advantage of according to an embodiment of the present disclosure to be, it can be made by the second mask pattern on mask
Corresponding redundant pattern is formed on wafer, so that the combination pattern of redundant pattern and target pattern is uniformly to divide on wafer
Cloth.
It is according to an embodiment of the present disclosure there is an advantage in that, can be by the second mask pattern on mask simultaneously
Realize projecting lens thermal aberration reduction and the pattern on wafer homogenization, avoid respectively for both of these problems into
Row improves brought cost and complexity.
By the detailed description referring to the drawings to the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Detailed description of the invention
The attached drawing for constituting part of specification describes embodiment of the disclosure, and together with the description for solving
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description referring to attached drawing, in which:
Fig. 1 is the schematic diagram of lithography system according to an embodiment of the present disclosure.
Fig. 2A is the top view of the mask according to an embodiment of the present disclosure for photoetching process.
Fig. 2 B is the top view of the mask according to an embodiment of the present disclosure for photoetching process.
Fig. 2 C is the top view of the mask according to an embodiment of the present disclosure for photoetching process.
Fig. 3 is the flow chart of the method for configuration mask according to an embodiment of the present disclosure.
Fig. 4 is the flow chart of photolithography method according to an embodiment of the present disclosure.
Note that same appended drawing reference is used in conjunction between different attached drawings sometimes in embodiments described below
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, position, size and range of each structure shown in attached drawing etc. etc. do not indicate practical sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the disclosure
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Fig. 1 is the schematic diagram of lithography system 1000 according to an embodiment of the present disclosure.Lithography system 1000 may include light
Source 1100, the first optical module 1200, mask 1300 and projecting lens 1400.Lithography system 1000 can be used for passing through photoetching
Technique forms pattern on wafer 2000.The pattern can be formed the integrated circuit layout on wafer by being further processed.It needs
It should be noted that those skilled in the art will manage although it includes shown all parts that Fig. 1, which shows lithography system 1000,
Solution, in other embodiments, lithography system 1000 may include more components, less component or these components
One or more of can be combined into single component or be split as multiple subassemblies.In addition, although showing photoetching in Fig. 1
What all parts of system 1000 were spatially separated, it will be appreciated by those skilled in the art that in these components
One or more components can be in contact with each other.Well known component (such as component for fixing, connecting or carry) is in Fig. 1
In be omitted, to avoid unnecessarily obscure the present invention.
In accordance with an embodiment of the present disclosure, light source 1100 can be configured as the light that transmitting is used for photoetching process, the first optics
Component 1200, which can be configured as, is directed to mask 1300 for the light that light source 1100 emits, and mask 1300 can be configured as transmission
At least part of the light, and projecting lens 1400 can be configured as to the projection of wafer 2000 through mask 1300
Light, to form pattern on wafer 2000.Describe propagation road of the light between all parts to dotted line in Fig. 1
Diameter.It will be appreciated by persons skilled in the art that these propagation paths are only schematical, the practical row of light is not represented
Inbound path.The all parts of lithography system 1000 are described more fully.
In accordance with an embodiment of the present disclosure, light source 1100 can be configured as the light that transmitting is used for photoetching.For example, light source 1100
It may include the light source of High Pressure Arc Lamp, excimer laser or any appropriate type.Light source 1100 can be configured as hair
Penetrate the light of visible light, ultraviolet light (UV), deep ultraviolet light (DUV), profound ultraviolet light (EUV) or any appropriate wavelength.It can be based on
For Multiple factors come the wavelength for the light for selecting light source 1100 to be emitted, these factors may include the pattern for example formed on wafer
Size, expectation resolution ratio etc..As an example, wavelength can be used for the light of 193nm.According to the implementation of the disclosure
Example, light source 1100 may include multiple isolated light sources.For example, light source 1100 can be by the way of off-axis illumination, this is helped
In the resolution ratio of the system of raising.When including multiple flagpole patterns by the pattern formed on wafer, light source 1100 can be used
The mode of dipole illumination.However, the mode of off-axis illumination may reduce lithography system while improving systemic resolution
Illumination uniformity in 1000, so that thermal aberration increases.It as described further below, can be by mask
The specific arrangements of mask pattern on 1300 improve illumination uniformity, thus reduce obtain high systemic resolution while or
Eliminate thermal aberration.
In accordance with an embodiment of the present disclosure, the first optical module 1200 can be configured as the light guidance for emitting light source 1100
To mask 1300.As shown in Figure 1, the first optical module 1200 may include one or more optical component 1200-1,1200-2,
1200-3.These optical components can be used to reflect light, focus, wavelength selection, integral etc..For example, one or
Multiple optical component 1200-1,1200-2,1200-3 may include plane mirror, parabolic mirror, collector lens, light product
Divide device or filter etc..First optical module 1200 can permit the light of the specific wavelength in the light that light source 1100 is emitted with
Mask plate 1300 is irradiated in specific intensity and direction.It should be noted that although showing the first optical module 1200 packet in Fig. 1
Three optical components are included, it will be recognized to those skilled in the art that the first optical module 1200 may include less or more
Optical component.
In accordance with an embodiment of the present disclosure, mask 1300 can include at least the first mask pattern 1320 and the second mask pattern
1330.First mask pattern 1320 and the second mask pattern 1330 can be disposed in substrate 1310.First mask pattern
1320 correspond to the target pattern 2010 that photoetching process will be formed on wafer 2000.Target pattern 2010 can be right
The integrated circuit layout (in other words, functional circuit) that should be formed on wafer 2000 in expectation.Second mask pattern 1330 can be with
Correspond to the pass the redundant pattern 2020 that photoetching process will be formed on wafer 2000.By arranging that second covers on mask 1300
Mould pattern 1330 can make the redundant pattern 2020 formed in addition to target pattern 2010 on wafer 2000.Target pattern
2010 combination patterns being formed together with redundant pattern 2020 can be such that the pattern on wafer is uniformly distributed.According to the reality of the disclosure
Example is applied, the first mask pattern 1320 may include the one or more flagpole pattern (not shown) extended in a first direction, and
Second mask pattern 1330 may include the one or more flagpole patterns extended along the second direction being at an angle of with first direction
(not shown).This specific arrangements of first mask pattern 1320 and the second mask pattern 1330 can be made to penetrate mask
1300 are radiated at the optical power detection of the diffraction light on projecting lens 1400, so that thermal effect of the light to projecting lens 1400
It should homogenize and reduce or eliminate thermal aberration.This specific arrangements of first mask pattern 1320 and the second mask pattern 1330
Example is described in further detail further in connection with Fig. 2A to Fig. 2 C.
It will be appreciated by persons skilled in the art that various materials appropriate and technique can be used to manufacture mask
1300.Different types of translucent material, such as quartz glass can be used in the substrate 1310 of mask 1300.Mask pattern (for example,
First mask pattern 1320 and the second mask pattern 1330) can be formed in substrate 1310 by light-proof material it is opaque
Layer, an example of the light-proof material can be crome metal.It can covered by processing steps such as exposure, development, etchings
Mask pattern is formed in the substrate 1310 of mould 1300.Mask pattern can be having the same with the pattern that is finally formed on wafer
The zoom version of the pattern formed in size or wafer.Material (positive photoresist or the negativity light used based on photosensitive layer
Photoresist), mask pattern can be corresponding with the integrated circuit layout that is formed on wafer of expectation, or with the integrated circuit layout
Supplementary set is corresponding.
In accordance with an embodiment of the present disclosure, projecting lens 1400 can be configured as to the projection of wafer 2000 through mask 1300
Light.For example, projecting lens 1400 may include at least one convex lens.It is easily understood that saturating although showing projection in Fig. 1
Mirror 1400 only includes an optical component, but in other embodiments, projecting lens 1400 may include multiple optical components.
Mask pattern on mask 1300 will make the light for being irradiated to mask 1300 that diffraction occur.Depending on the pattern on mask 1300
Arrangement, distribution of the light intensity on projecting lens 1400 through the diffraction light of mask 1300 may not be uniform.When the light of light
By force when being unevenly distributed on projecting lens 1400, the fuel factor that the various pieces of projecting lens 1400 generate be will be different,
This will make the degrees of expansion of the various pieces of projecting lens 1400 different, to distort expected light pattern, cause on wafer
Thermal aberration in the pattern of formation.It, can be on mask 1300 as being described in further detail below in conjunction with Fig. 2A to Fig. 2 C
Mask pattern carries out specific arrangements, so that the light intensity of light distribution uniformity on projecting lens 1400, to reduce or eliminate
This thermal aberration.
Wafer 2000 may include such as silicon substrate.It can be already formed with one or more layers on a silicon substrate.This
At least top layer in a or multiple layers can be the photosensitive layer formed by photoresist.Photosensitive layer reception is projected by projecting lens 1400
Light, photochemical reaction occurs for the part photoresist that is exposed, so that the part can be easily in subsequent developing process
In the dissolution of developed solution.Thus, it is possible to form pattern corresponding with mask pattern on a photoresist layer.After can further passing through
The techniques such as continuous etching, doping, annealing form desired integrated circuit layout on wafer.As previously discussed, pass through light
The pattern that carving technology is formed is uniformly distributed on wafer is advantageous these subsequent techniques.It can be by mask 1300
Mask pattern carry out specific arrangements and realize this purpose.
Fig. 2A is the top view of the mask 2300A according to an embodiment of the present disclosure for photoetching process.Mask 2300A can
To be an example of mask 1300 for lithography system 1000 shown in FIG. 1.
In accordance with an embodiment of the present disclosure, mask 2300A may include one or more first mask patterns 2321,2322.
First mask pattern 2321 and 2322 is disposed in substrate 2310.It should be noted that although Fig. 1 shows mask 2300A packet
Two the first mask patterns are included, it will be recognized to those skilled in the art that mask 2300A may include more or fewer
One mask pattern.For example, mask 2300A can only include single first mask pattern.
In accordance with an embodiment of the present disclosure, each of first mask pattern 2321,2322 corresponds to photoetching
The target pattern that technique will be formed on wafer.That is, each first mask pattern can correspond to the collection desirably formed
At circuit layout.In some applications of this field, what integrated circuit layout was usually designed to include to extend in the same direction
Multiple flagpole patterns.Correspondingly, the first mask pattern may include in mask plane along certain side each of on mask 2300A
The one or more flagpole patterns extended to (herein referred as " first direction ").As shown in Figure 2 A, the first mask pattern 2321 can
To include 5 flagpole patterns extended along the y axis, each flagpole pattern is corresponding to a part of integrated circuit layout.Additionally,
First mask pattern 2322 may include 5 flagpole patterns extended along the y axis, and each flagpole pattern corresponds to integrated circuit
Another part of layout or another integrated circuit layout.The first mask pattern 2321,2322 in Fig. 2A is only exemplary
's.According to the other embodiments of the disclosure, the flagpole pattern of the first mask pattern 2321 can be with the first mask pattern 2322
Flagpole pattern extends in different directions, and the two first mask patterns may include the flagpole pattern of different number.Separately
Outside, although the main body of the flagpole pattern of the first mask pattern extends along same direction, each of these flagpole patterns
It can have and extend one or more branches along other directions, as shown in Figure 2 A.
In order to ensure the different piece on wafer integrated circuit layout (for example, with 2321,2322 pairs of the first mask pattern
The integrated circuit layout answered) it will not interfere with each other, it usually needs to be spaced apart a certain distance between these integrated circuit layouts.Between
Septal area domain does not usually form pattern and becomes blank, this will cause the pattern on wafer and is unevenly distributed.As previously mentioned, wafer
On this non-uniform pattern distribution be undesirable.It can make to be formed on wafer by way of redundant pattern is arranged
Pattern homogenization.In addition, in practical application, mask pattern (for example, first mask pattern) corresponding with target pattern usually by
It is designed as including the multiple flagpole patterns extended in the same direction, this will cause the light intensity of the diffraction light by the first mask pattern
It concentrates on (that is, direction vertical with the direction that multiple flagpole patterns of the first mask pattern extend) in one direction, to make
The projecting lens uneven heating that is located at after mask is even and generate biggish thermal aberration.It can be by set redundancy figure
Case carries out special configuration to make diffraction light uniformization, to reduce or eliminate thermal aberration.
In accordance with an embodiment of the present disclosure, one or more second mask patterns can be additionally configured on mask 2300A
2331,2332.Second mask pattern 2331,2332 can be used to making the diffraction light uniformization and simultaneously through mask 2300A
So that the pattern homogenization formed on wafer.It should be noted that although it includes two the second masks that Fig. 1, which shows mask 2300A,
Pattern, it will be recognized to those skilled in the art that mask 2300A may include more or fewer second mask patterns.Example
Such as, mask 2300A may include single second mask pattern.
In accordance with an embodiment of the present disclosure, in order to make the diffraction light uniformization through mask 2300A, the second mask pattern
2331, it each of 2332 can be configured as including along one or more extended with the angled second direction of first direction
A flagpole pattern, wherein first direction refers to the direction that the flagpole pattern in the first mask pattern extends.Due to the light of diffraction light
It concentrates on the direction vertical with flagpole pattern extending direction by force, so will have by diffraction light caused by the second mask pattern
There is the component vertical with diffraction light caused by the first mask pattern is passed through, the introducing of this vertical component facilitates diffraction light and exists
The homogenization of distribution on projecting lens.
In accordance with an embodiment of the present disclosure, it can suitably determine to the angle between first direction and second direction, so that
The light intensity for obtaining diffraction light in different directions is close or equal.As an example, in the second mask pattern 2331 shown in Fig. 2A
Each flagpole pattern extending direction (referred to as " second direction " of the second mask pattern 2331) and the first mask pattern 2321
Or first the angle of extending direction of each flagpole pattern of mask pattern 2322 be 45 °, and in the second mask pattern 2332
Each flagpole pattern extending direction (referred to as " second direction " of the second mask pattern 2332) and the first mask pattern 2321
Or first the angle of extending direction of each flagpole pattern of mask pattern 2322 be 135 °.
According to the other embodiments of the disclosure, the angle between first direction and second direction can be determined that 45 degree extremely
Any suitable angle between 135 degree.According to preferred embodiment of the present disclosure, the angle between first direction and second direction can
To be confirmed as 90 degree, that is, second direction is perpendicular to first direction.Fig. 2 B is according to preferred embodiment of the present disclosure for light
The top view of the mask 2300B of carving technology.In fig. 2b, multiple flagpole patterns in the second mask pattern 2331,2332 prolong
It is vertical with the extending direction of multiple flagpole patterns in the first mask pattern 2321,2322 to stretch direction, wherein the first mask pattern
2321, multiple flagpole patterns in 2322 extend along the y axis, and multiple strips in the second mask pattern 2331,2332
Figure extends along the x axis.This arranged perpendicular can be introduced with the smallest redundant pattern and be produced with by the first mask pattern
The vertical maximum diffraction light component of raw diffraction light so that distribution uniformity of the diffraction light on projecting lens, avoid by
The diffraction light of single direction causes the fuel factor on projecting lens uneven.
Second mask pattern 2331,2332 on wafer it is also possible that form corresponding redundant pattern, to facilitate
The homogenization of pattern on wafer.In accordance with an embodiment of the present disclosure, each flagpole pattern in the second mask pattern 2331,2332
Length can be 300nm-200um, width can be 30nm-2um, and the spacing between two neighboring flagpole pattern can be with
For 50nm-300um.
As known to those skilled in the art, the selection in photoetching process for optical module and used optical wavelength
It is often based on the property (for example, size, resolution ratio etc.) of target pattern.When the size of the second mask pattern is much smaller than the first mask
When the size of pattern, it may not be possible to form corresponding redundant pattern on wafer by photoetching process.It cannot be formed on wafer
The mask pattern of corresponding pattern is referred to as Subresolution pattern.According to preferred embodiment of the present disclosure, to enable in crystalline substance
On circle formed with the second mask pattern 2331,2332 corresponding redundant patterns, can be according to the first mask pattern 2321,2322
The size of one or more flagpole patterns determines the rulers of one or more flagpole patterns of the second mask pattern 2331,2332
It is very little.For example, the line width of one or more flagpole patterns of the second mask pattern 2331,2332 can be the first mask pattern
2321,0.4 times to 2 times of the line width w of 2322 one or more flagpole patterns.As an example, line width w can refer to the first mask
The minimum feature or average line width of one or more flagpole patterns of pattern 2321,2322.
In accordance with an embodiment of the present disclosure, in order to enable the redundant pattern formed on wafer is uniformly distributed with target pattern,
One or more flagpole patterns of second mask pattern 2331,2332 can be arranged on mask 2300A or 2300B and the
One or more flagpole patterns of one mask pattern 2321,2322 are uniformly distributed together.For example, the second mask pattern 2331,
The interval between two neighboring flagpole pattern in one or more flagpole patterns of each of 2332 second mask patterns can
It is basic with the interval being confirmed as between the two neighboring flagpole pattern in the flagpole pattern of the first mask pattern 2321,2322
It is equal.This not only can make redundant pattern and target pattern be uniformly distributed on wafer, be also ensured by different mask artworks
Light being uniformly distributed on projecting lens that case penetrates.
In accordance with an embodiment of the present disclosure, one of second mask pattern of each of second mask pattern 2331,2332 or
Multiple flagpole patterns can have identical shape.Due to the second mask pattern 2331,2332 and do not correspond to comprising function electricity
The integrated circuit layout on road, so the second mask pattern can be formed as simple figure to reduce mask 2300A or 2300B
Manufacture complexity.According to preferred embodiment of the present disclosure, one or more flagpole patterns of the second mask pattern, which can be, to be had
The strip of the same shape is without branch, as shown in Figure 2 B.
Although passing through the redundant pattern itself that the second mask pattern 2331,2332 is formed on wafer and not corresponding to integrated
A part of circuit layout, but when redundant pattern distance objective pattern is too close, these redundant patterns may be to integrated electricity
The electromagnetic property on road generates interference.In accordance with an embodiment of the present disclosure, the second mask pattern can be spaced apart with the first mask pattern
Certain distance, to reduce or eliminate interference of the redundant pattern to the electromagnetic property of integrated circuit.For example, the first mask pattern can be with
Be disposed in one or more main graphic areas on mask, and the second mask pattern can be disposed on mask far from this one
In the remote main graphic area in a or multiple main graphics area.According to one embodiment of the disclosure, the second mask pattern can be arranged
For with the first mask pattern interval 500nm or farther.
In accordance with an embodiment of the present disclosure, one or more Subresolution patterns can be further arranged on mask, so that
The light obtained through mask projection to projecting lens further homogenizes.Fig. 2 C is according to preferred embodiment of the present disclosure for light
The top view of the mask 2300C of carving technology.Compared with the mask 2300B shown in Fig. 2 B, mask 2300C additionally includes having Asia
One or more mask pattern 2341-2347 of resolution ratio.Here, the pattern with Subresolution refers to suitable with target pattern
Due to the smaller mask pattern without forming corresponding pattern on wafer of pattern dimension in the photoetching process matched.These have Asia
Each of mask pattern of resolution ratio mask pattern may include the multiple elongated flagpole patterns extended in a certain direction.
The line width of these elongated flagpole patterns can be less than one of the first mask pattern 2321,2322 corresponding with target pattern or
0.4 times of the line width w of multiple flagpole patterns.
In accordance with an embodiment of the present disclosure, it can be disposed about in the first mask pattern associated with first mask pattern
One or more has the mask pattern of Subresolution.As shown in Figure 2 C, phase can be disposed about in the first mask pattern 2321
Associated mask pattern 2341,2342 and/or 2346.Advantageously, mask pattern 2346 is located at the first mask pattern 2321 and phase
Between the second adjacent mask pattern 2331, and a part of mask pattern 2342 is located at the first mask pattern 2321 and adjacent the
Between two mask patterns 2332.This arrangement can fill the white space on mask 2300C.Mask pattern 2341,2342 and/
Or each of 2346 the flagpole pattern of mask pattern can extend along first direction (for example, Y-axis), which is
The extending direction of flagpole pattern in one mask pattern 2321.The consistency in the two directions helps avoid mask pattern
2341, influence of the optical diffraction to the first mask pattern 2321 caused by 2342 and/or 2346.Furthermore, it is possible in the second mask artwork
Case 2322 is disposed about associated mask pattern 2342,2345 and/or 2347.Advantageously, mask pattern 2347 is located at first
Between mask pattern 2322 and the second adjacent mask pattern 2332, and a part of mask pattern 2342 is located at the first mask artwork
Between case 2322 and the second adjacent mask pattern 2331.Each of mask pattern 2342,2345 and/or 2347 mask artwork
The flagpole pattern of case can extend along first direction (for example, Y-axis), that is, flagpole pattern in the first mask pattern 2322 prolongs
Stretch direction.
In accordance with an embodiment of the present disclosure, can also be disposed about associated one or more in the second mask pattern has
The mask pattern of Subresolution.As shown in Figure 2 C, associated mask pattern can be disposed about in the second mask pattern 2331
2342,2344 and/or 2346, and can the second mask pattern 2332 be disposed about associated mask pattern 2342,
2343 and/or 2347.Since the second mask pattern 2331,2332 not will form the integrated circuit with electric function, so
The extending direction of each flagpole pattern of the mask pattern with Subresolution associated with these second mask patterns can be with
With various directions.
It should be noted that although Fig. 2 C shows 7 additional mask pattern 2341-2347 with Subresolution,
It will be appreciated by those skilled in the art that can according to need the more or fewer this mask patterns of configuration, or selectivity
Ground only configures a subset of mask pattern 2341-2347.
Additionally there are one or more mask pattern 2341-2347 of Subresolution to help so that through mask for configuration
The light that 2300C projects projecting lens further homogenizes and reduces thermal aberration.Further, since the mask pattern of Subresolution is not
Corresponding pattern can be formed on wafer and influence the electromagnetic performance of integrated circuit layout, so, and correspond to redundant pattern
Second mask pattern is compared, and the mask pattern of Subresolution can be arranged in from the first mask pattern closer proximity.This
Avoid on mask that there are biggish blank pattern area (for example, between the first mask pattern and second mask patterns).However, by
It is smaller in the mask pattern size with Subresolution, so its manufacture and design are likely more complexity.Due to cost considerations,
The effect of homogenization diffraction light can be mainly played by the second mask pattern, and Subresolution mask pattern can be used as preferably
Additional pattern is added.In addition, only there is the mask pattern of Subresolution redundant pattern can not be formed on wafer for addition, because
This can not achieve the technical effect for homogenizing the pattern on wafer.
It should be noted that although flagpole pattern in two the first mask patterns 2321,2322 shown in Fig. 2A-Fig. 2 C
Extending direction having the same, it will be appreciated by those skilled in the art that the two first mask patterns 2321,2322
In flagpole pattern also can have different extending directions.And the second mask artwork associated with each first mask pattern
The being adapted to property of direction of case it is adjusted.
It should be noted that although Fig. 2A -2C shows the second mask pattern identical with the first mask pattern quantity,
It is it will be appreciated by persons skilled in the art that each first mask pattern can have multiple second masks associated therewith
Pattern, this multiple second mask pattern can be configured as forms uniform combination together with first mask pattern on wafer
Pattern is and at the same time make the light uniformization for projecting projecting lens.For example, for the first mask pattern 2321, cover in addition to second
Except mould pattern 2331,2332, the second additional masking pattern (not shown) can also be set.The second additional masking pattern includes
The multiple additional flagpole patterns extended in a second direction, and the second additional masking pattern correspond to the pass photoetching process will be in crystalline substance
The additional redundancy pattern formed on circle.
It should be noted that although Fig. 2A -2C depicts mask 2300A-2300C, the first mask pattern with certain size
2321 and 2322, second mask pattern 2331 and 2332, and/or the mask pattern 2341-2347 with Subresolution, but institute
The ratio between size used is only schematical, does not represent the proportionate relationship between actual components or pattern.And
And the shape of shown various elements, pattern be also only it is schematical, without departing from the spirit of the invention,
These elements, pattern can have various proper shapes.In addition, as previously mentioned, the mask arranged on mask 2300A-2300C
The quantity of pattern can be more or less.
Fig. 3 is the flow chart of the method 3000 of configuration mask according to an embodiment of the present disclosure.Method 3000 may include
At least step 3100 and 3200.It will be understood by those skilled in the art that method 3000 can be used for by being suitable for design and/or manufacture
Any main body of the mask of photoetching process is implemented by any proper implements.
In accordance with an embodiment of the present disclosure, step 3100 may include that the first mask pattern is formed on mask.Form
One mask pattern corresponds to the pass the target pattern that photoetching process will be formed on wafer, wherein the first mask pattern packet
Include the first flagpole pattern of one or more extended in a first direction.The example of mask can be the mask described in conjunction with Fig. 1
1300 or combine Fig. 2A -2C description mask 2300A-2300C in any one.The example of first mask pattern can be
In conjunction with appointing in Fig. 1 the first mask pattern 1320 described or the first mask pattern 2321,2322 for combining Fig. 2A -2C to describe
Meaning is one or more.
In accordance with an embodiment of the present disclosure, step 3200 may include that the second mask pattern is formed on mask.This second is covered
Mould pattern may include the second flagpole pattern of one or more extended along the second direction being at an angle of with first direction, and the
Two mask patterns correspond to the pass the redundant pattern that photoetching process will be formed on wafer.This of second mask pattern specific is set
It is equipped with the uniformity for helping improve the fuel factor on projecting lens, to reduce or eliminate thermal aberration.At the same time, it is covered with second
The corresponding redundant pattern of mould pattern can improve the uniformity of the pattern on wafer.
It will be appreciated by persons skilled in the art that step 3100, " formation " may include mask used in 3200
The design of the configuration to each mask pattern in design process also may include in mask fabrication process on mask entity top
One or more mask patterns are affixed one's name to, or including combination of the two.
Method 3000 can also include the steps that one or more is optional, these steps are not shown in FIG. 3.
In accordance with an embodiment of the present disclosure, method 3000, which can also optionally include, suitably determines first direction and second party
Angle between.For example, the angle between first direction and second direction can be true according to some embodiments of the present disclosure
Any angle being set within the scope of 45 degree to 135 degree.According to the preferred embodiment of the disclosure, first direction and second direction it
Between angle can be determined that 90 degree.
In accordance with an embodiment of the present disclosure, forming the second mask pattern can optionally include according to first one or more
The size of shape figure determines the size of one or more second flagpole patterns.According to some embodiments of the present disclosure, one or more
The width of a second flagpole pattern can be determined that 0.4 times to 2 times of the line width of one or more first flagpole patterns.According to
Embodiment of the disclosure, the second mask pattern of formation, which can also optionally include, is formed as one or more second flagpole patterns
It is uniformly distributed on mask with the first flagpole pattern of one or more so that redundant pattern and target pattern are uniform on wafer
Distribution.In accordance with an embodiment of the present disclosure, forming the second mask pattern can also optionally include so that one or more Article 2
Between two neighboring second flagpole pattern in shape figure interval with one or more the first flagpole patterns in it is two neighboring
Interval between first flagpole pattern is of substantially equal.In accordance with an embodiment of the present disclosure, forming the second mask pattern can be with optional
Ground include each of one or more second flagpole patterns the second flagpole pattern is formed to have the same shape strip and
There is no branch.
In accordance with an embodiment of the present disclosure, method 3000 can be optionally included according to the shape after CMP (chemically mechanical polishing)
Looks require and pattern between galvanomagnetic-effect determine the design rule of redundant pattern, and according to the design rule it is determining with it is right
It should be in the neighbouring nearly main graphic area of the first mask pattern of target pattern and far from the remote main graphic area of first mask pattern.
It forms the second mask pattern and can also optionally include and the second mask pattern is formed in remote main graphic area.According to the reality of the disclosure
Example is applied, forming the second mask pattern includes being arranged as the second mask pattern and the first mask pattern interval at least 500nm.
In accordance with an embodiment of the present disclosure, method 3000 can also be optionally included based on prepared design rule come to institute
The mask pattern of formation is arranged.The arrangement may include for example delete Chong Die with the first mask pattern or excessively close one or
Multiple second mask patterns or part of it.
In accordance with an embodiment of the present disclosure, method 3000 can also optionally include according on mask the first mask pattern and
The quantity of second mask pattern and extending direction selectively add one or more patterns with Subresolution.For example,
Method 3000 can also be optionally included in the first mask pattern and be formed about third mask pattern.Third mask pattern can wrap
The multiple third flagpole patterns extended in a first direction are included, and third mask pattern will not be by the photoetching process described
Pattern (that is, third mask pattern can have Subresolution) is formed on wafer.According to preferred embodiment of the present disclosure, third is covered
At least part of mould pattern can be formed between the first mask pattern and the second mask pattern.According to the implementation of the disclosure
Example, method 3000 can also be optionally included in the second mask pattern and be formed about the 4th mask pattern, the 4th mask pattern
Including multiple Article 4 shape figures, and the 4th mask pattern will not be formed on the wafer by photoetching process pattern (that is,
4th mask pattern can have Subresolution).
In accordance with an embodiment of the present disclosure, method 3000, which can also be optionally included on mask, forms the second additional masking figure
Case.The second additional masking pattern may include the multiple second additional flagpole patterns extended in a second direction, and second is attached
Mask pattern is added to correspond to the additional redundancy pattern that photoetching process will be formed on wafer.
Fig. 4 is the flow chart of photolithography method 4000 according to an embodiment of the present disclosure.In accordance with an embodiment of the present disclosure, photoetching
Method 4000 may include step 4100 and step 4200.Step 4100 may include being emitted light source using the first optical module
Light be directed to mask, and step 4200 may include that guidance is projected by projecting lens to wafer through the light of mask.Light
The lithography system 1000 herein in connection with the description of Fig. 1 can be used to realize in carving method 4000, wherein used mask can
To be any one described mask in accordance with an embodiment of the present disclosure.Photolithography method 3000 can reduce thermal aberration and make simultaneously
Pattern homogenization on obtained wafer.
Following exemplary embodiments is at least disclosed herein.
1, a kind of mask, wherein the mask includes: the first mask pattern, and first mask pattern corresponds to the pass
The target pattern that photoetching process will be formed on wafer, wherein first mask pattern includes one extended in a first direction
A or multiple first flagpole patterns；And second mask pattern, wherein second mask pattern include along and the first party
The second flagpole pattern of one or more extended to angled second direction, and second mask pattern corresponds to the pass
The redundant pattern that photoetching process will be formed on the wafer.
2, according to mask described in embodiment 1, wherein the angle between the first direction and the second direction is 45
Degree is to 135 degree.
3, according to mask as described in example 2, wherein the angle between the first direction and the second direction is 90
Degree.
4, according to mask described in embodiment 1, wherein the size of one or more of second flagpole patterns is according to institute
State the size determination of one or more first flagpole patterns.
5, according to mask as described in example 4, wherein the width of one or more of second flagpole patterns is described one
0.4 times to 2 times of the line width of a or multiple first flagpole patterns.
6, according to mask described in embodiment 1, wherein one or more of second flagpole patterns be arranged to it is described
One or more first flagpole patterns are uniformly distributed on the mask, so that the redundant pattern and the target pattern exist
It is uniformly distributed on the wafer.
7, according to mask described in embodiment 1, wherein two neighboring in one or more of second flagpole patterns
Between interval between two flagpole patterns and two neighboring first flagpole pattern in one or more of first flagpole patterns
Interval it is of substantially equal.
8, according to mask described in embodiment 1, wherein each Article 2 in one or more of second flagpole patterns
Shape figure is that have the strip of the same shape without branch.
9, according to mask described in embodiment 1, wherein second mask pattern is arranged to and first mask artwork
Case interval at least 500nm.
10, according to mask described in embodiment 1, wherein the mask further includes near first mask pattern
Third mask pattern, the third mask pattern include the multiple third flagpole patterns extended along the first direction, and described the
Three mask patterns will not form pattern on the wafer by the photoetching process.
11, the mask according to embodiment 10, wherein at least part of the third mask pattern is located at described the
Between one mask pattern and second mask pattern.
12, according to mask described in embodiment 1, wherein the mask further includes near second mask pattern
4th mask pattern, the 4th mask pattern include multiple Article 4 shape figures, and the 4th mask pattern will not pass through institute
It states photoetching process and forms pattern on the wafer.
13, mask as described in Example 1, wherein the mask also includes at least: the second additional masking pattern, it is described
Second additional masking pattern includes the multiple second additional flagpole patterns extended along the second direction, and described second is additional
Mask pattern corresponds to the pass the additional redundancy pattern that photoetching process will be formed on the wafer.
14, a kind of method for configuring mask, wherein the described method includes: the first mask pattern is formed on the mask,
First mask pattern corresponds to the pass the target pattern that photoetching process will be formed on wafer, wherein first mask
Pattern includes the first flagpole pattern of one or more extended in a first direction；And the second mask artwork is formed on the mask
Case, wherein second mask pattern includes the one or more extended along the second direction being at an angle of with the first direction
Second flagpole pattern, and second mask pattern corresponds to the pass the redundancy figure that photoetching process will be formed on the wafer
Case.
15, method as described in Example 14, wherein the angle between the first direction and the second direction is 45
Degree is to 135 degree.
16, method as described in Example 15, wherein the angle between the first direction and the second direction is 90
Degree.
17, method as described in Example 14, wherein formed second mask pattern include: according to one or
The size of multiple first flagpole patterns determines the size of one or more of second flagpole patterns.
18, the method according to embodiment 17, wherein the width of one or more of second flagpole patterns is described
0.4 times to 2 times of the line width of one or more first flagpole patterns.
19, the method according to embodiment 14, wherein formed second mask pattern include: by one or
Multiple second flagpole patterns are formed as being uniformly distributed on the mask with one or more of first flagpole patterns, so that
The redundant pattern and the target pattern are uniformly distributed on the wafer.
20, the method according to embodiment 14, wherein forming second mask pattern includes: so that one
Or the interval between two neighboring second flagpole pattern in multiple second flagpole patterns and one or more of first strips
The interval between two neighboring first flagpole pattern in figure is of substantially equal.
21, the method according to embodiment 14, wherein formed second mask pattern include: by one or
The second flagpole pattern of each of multiple second flagpole patterns is formed to have the strip of the same shape without branch.
22, the method according to embodiment 14, wherein forming second mask pattern includes: to cover described second
Mould pattern is arranged as and first mask pattern interval at least 500nm.
23, the method according to embodiment 14, wherein the method also includes: near first mask pattern
Third mask pattern is formed, the third mask pattern includes the multiple third flagpole patterns extended along the first direction, institute
Pattern will not be formed on the wafer by the photoetching process by stating third mask pattern.
24, the method according to embodiment 23, wherein at least part of the third mask pattern is formed on institute
It states between the first mask pattern and second mask pattern.
25, the method according to embodiment 14, wherein the method also includes: near second mask pattern
The 4th mask pattern is formed, the 4th mask pattern includes multiple Article 4 shape figures, and the 4th mask pattern will not lead to
It crosses the photoetching process and forms pattern on the wafer.
26, method as described in Example 14, wherein the method also includes: second, which is formed, on the mask adds
Mask pattern, the second additional masking pattern include the multiple second additional flagpole patterns extended along the second direction, and
And the second additional masking pattern corresponds to the pass the additional redundancy pattern that photoetching process will be formed on the wafer.
27, a kind of lithography system, wherein the lithography system includes: light source, is configured as transmitting for photoetching process
Light；First optical module is configured as the light that light source emits being directed to mask；Covering as described in any one of embodiment 1-13
Mould is configured as at least part through the light；And projecting lens, it is configured as projecting the institute for penetrating mask to wafer
State described at least part of light.
28, lithography system as described in Example 27, wherein the light source is dipole illumination light source.
29, a kind of photolithography method, wherein the described method includes: being guided using the light that the first optical module emits light source
To the mask as described in any one of embodiment 1-13；And guidance is thrown by projecting lens to wafer through the light of the mask
It penetrates.
In the word "front", "rear" in specification and claim, "top", "bottom", " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language be in appropriate circumstances it is interchangeable so that embodiment of the disclosure described herein, for example, can in this institute
It is operated in those of description show or other other different orientations of orientation.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technique, summary of the invention or specific embodiment
Given in go out theory that is any stated or being implied limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Any small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual implementation with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature and another element/node/feature in electricity
Above, it is directly connected (or direct communication) mechanically, in logic or in other ways.Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection, including benefit indirectly of element or other feature
With the connection of one or more intermediary elements.
In addition, middle certain term of use can also be described below, and thus not anticipate just to the purpose of reference
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.It should also be understood that one word of "comprises/comprising" is as used herein, explanation is deposited
In pointed feature, entirety, step, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more
Other feature, entirety, step, operation, unit and/or component and/or their combination.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are modified, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
Although being described in detail by some specific embodiments of the example to the disclosure, the skill of this field
Art personnel it should be understood that above example merely to be illustrated, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of mask, which is characterized in that the mask includes:
First mask pattern, first mask pattern correspond to the pass the target pattern that photoetching process will be formed on wafer,
Wherein, first mask pattern includes the first flagpole pattern of one or more extended in a first direction；And
Second mask pattern, wherein second mask pattern includes prolonging along the second direction being at an angle of with the first direction
The second flagpole pattern of one or more stretched, and second mask pattern correspond to the pass photoetching process will be in the wafer
The redundant pattern of upper formation.
2. mask according to claim 1, it is characterised in that:
Angle between the first direction and the second direction is 45 degree to 135 degree.
3. mask according to claim 2, it is characterised in that:
Angle between the first direction and the second direction is 90 degree.
4. mask according to claim 1, it is characterised in that:
The size of one or more of second flagpole patterns is true according to the size of one or more of first flagpole patterns
Fixed.
5. mask according to claim 4, it is characterised in that:
The width of one or more of second flagpole patterns is 0.4 times of the line width of one or more of first flagpole patterns
To 2 times.
6. mask according to claim 1, it is characterised in that:
One or more of second flagpole patterns are arranged to one or more of first flagpole patterns in the mask
On be uniformly distributed so that the redundant pattern and the target pattern are uniformly distributed on the wafer.
7. mask according to claim 1, it is characterised in that:
Interval between two neighboring second flagpole pattern in one or more of second flagpole patterns and it is one or
The interval between two neighboring first flagpole pattern in multiple first flagpole patterns is of substantially equal.
8. a kind of method for configuring mask, which is characterized in that the described method includes:
The first mask pattern is formed on the mask, first mask pattern corresponds to the pass photoetching process will be on wafer
The target pattern of formation, wherein first mask pattern includes the first bar graph of one or more extended in a first direction
Shape；And
The second mask pattern is formed on the mask, wherein second mask pattern include along with the first direction at
The second flagpole pattern of one or more that the second direction of angle extends, and second mask pattern corresponds to the pass photoetching
The redundant pattern that technique will be formed on the wafer.
9. a kind of lithography system, which is characterized in that the lithography system includes:
Light source is configured as the light that transmitting is used for photoetching process；
First optical module is configured as the light that light source emits being directed to mask；
Such as mask of any of claims 1-7, it is configured as at least part through the light；And
Projecting lens is configured as projecting described at least part of the light through mask to wafer.
10. a kind of photolithography method, which is characterized in that the described method includes:
The light that light source emits is directed to such as mask of any of claims 1-7 using the first optical module；And
Guidance is projected by projecting lens to wafer through the light of the mask.
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| CN201910617337.XA CN110231753A (en) | 2019-07-10 | 2019-07-10 | Mask and its configuration method, lithography system and photolithography method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910617337.XA CN110231753A (en) | 2019-07-10 | 2019-07-10 | Mask and its configuration method, lithography system and photolithography method |
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Application publication date: 20190913 |