CN102520578B - Testing photomask and application thereof - Google Patents
Testing photomask and application thereof Download PDFInfo
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- CN102520578B CN102520578B CN 201110355463 CN201110355463A CN102520578B CN 102520578 B CN102520578 B CN 102520578B CN 201110355463 CN201110355463 CN 201110355463 CN 201110355463 A CN201110355463 A CN 201110355463A CN 102520578 B CN102520578 B CN 102520578B
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Abstract
The invention relates to a testing photomask, which is used for testing the relation between the flatness of a current metal layer and feature density. The layout of the testing photomask consists of n multiplied by m areas, each area has different feature density, and consists of an isolated line, a sub-resolution assistant feature, a resolvable assistant feature, semi-dense lines, dense lines and a redundant feature array, and the sub-resolution assistant feature and the resolvable assistant feature are on both sides of the isolated line. The invention uses the testing photomask with a metal layer redundancy fill application function, a photoetching process window expansion function and a photoetching process defect monitoring function to effectively expand the photoetching process window, improve the flatness of the chemically and mechanically polished local area of the metal layer, increase the efficiency of the development of the metal layer redundancy fill design and the chemical and mechanical metal layer polishing process and the efficiency of chemically and mechanically polished metal layer flatness prediction and needed feature density adjustment, and reduces the cost of the testing photomask used in the photoetching process.
Description
Technical field
The present invention relates to semiconductor applications, particularly a kind of test light mask plate and application thereof.
Background technology
Along with the integrated level of semi-conductor chip improves constantly, transistorized characteristic dimension is constantly dwindled.After entering into 130 nm technology node, be subject to the restriction of the high-ohmic of aluminium, copper-connection substitution of Al interconnection gradually becomes metal interconnected main flow.Because the dry etch process of copper is difficult, realize, the method for making of copper conductor can not obtain by etching sheet metal as aluminum conductor.The method for making of the copper conductor extensively adopted now is the embedding technique that is called Damascus technics.This technique low k value dielectric layer of deposition at first on silicon chip, then by photoetching be etched in dielectric layer and form metallic channel, continue that follow-up metal level deposits and the metal level cmp is made plain conductor.
Surface flatness after cmp and metallic pattern density relationship are close.In order to reach uniform grinding effect, require the metallic pattern density on silicon chip even as far as possible.And the metallic pattern density of product design usually can not meet the requirement of cmp uniformity coefficient.The method solved is to fill redundancy metal at the white space of domain to make domain pattern density homogenising.
Traditional method is to utilize the artificial uniformity coefficient that redundancy metal improves the domain pattern density of filling.This method efficiency is not high.Advanced method is to utilize simulation softward to improve the efficiency of filling the redundancy metal graphic designs.But existing method is aspect the efficiency of development of metallic stratification mechanical milling tech, and in fast-changing client's product pattern density situation, predict aspect the flatness after the metal level cmp, cost is higher, and efficiency also can meet the demand of design and development not to the utmost.
In client's product pattern density, under given live width condition, the depth of focus process window of various bargraphss has following relationship: the depth of focus of intensive lines is greater than the depth of focus of half intensive lines, and the depth of focus of half intensive lines is greater than the depth of focus of isolated lines.Utilize this relation, on isolated lines side, increase the process window that auxiliary pattern can enlarge isolated lines.Do not increase again extra figure in order to enlarge process window, usually can increase Sub-resolution assist features (sub-resolution assistant feature, SRAF) in photomask, Sub-resolution assist features does not form figure in photoresist.
Bring the negative effect of device in order to reduce extra coupling capacitance, to reduce as far as possible the filling quantity of redundancy metal when the design redundancy metal is filled and keep main graphic and the redundancy metal spacing large as far as possible.Larger main graphic and redundancy metal spacing can cause the pattern density of regional area inhomogeneous, affect the regional area flatness of metal level cmp.Auxiliary pattern can enlarge the lithographic process window of isolated lines, improves the regional area flatness of metal level cmp, but can cause larger extra intermetallic coupling capacitance.
Summary of the invention
The purpose of this invention is to provide a kind of test light mask plate and application thereof, effectively enlarging lithographic process window, improve to fill metal level flatness after cmp of the efficiency of efficiency, the exploitation of metal level chemical mechanical milling tech of redundancy metal graphic designs and prediction and efficiency that the pattern density that needs is adjusted, reduce the cost of test light mask.
Technical solution of the present invention is a kind of test light mask plate, work as the flatness of layer metal level and the relation of pattern density for test, the domain of described test light mask plate consists of nxm zone, each described zone has different pattern densities, each zone comprises Sub-resolution assist features and distinguishable rate auxiliary pattern, half intensive lines, intensive lines and the redundant pattern array of isolated lines, isolated lines both sides, wherein n is more than or equal to 1 integer, and m is more than or equal to 1 integer.
As preferably: the lines live width of described isolated lines, half intensive lines and intensive lines is more than or equal to the distinguishable live width of minimum when layer metal level.
As preferably: described redundant pattern array consists of the redundant pattern of same size, and the live width of redundant pattern is more than or equal to the distinguishable live width of minimum when layer metal level.
As preferably: described redundant pattern array consists of the redundant pattern of different size, and the live width of redundant pattern is more than or equal to the distinguishable live width of minimum when layer metal level.
The present invention also provides a kind of application of above-mentioned test light mask plate, comprises the following steps:
Obtain the pattern density in nxm zone in described optical mask plate domain and the pattern density gradient of adjacent area;
Deposit low dielectric constant films on substrate;
Apply photoresist on low dielectric constant films, photoetching forms the figure of test light mask plate;
By the measurement to various lines live widths in photoresist, obtain Sub-resolution assist features and the distinguishable rate auxiliary pattern information on the impact of lines live width;
The etching low dielectric constant film-shaped becomes corresponding to the metallic channel of half intensive lines and intensive lines, corresponding to the redundancy metal groove of redundant pattern with corresponding to the auxiliary pattern redundancy metal groove of distinguishable rate auxiliary pattern;
At said structure surface deposition metal;
Cmp forms the metal level be comprised of wire metal, redundancy metal and auxiliary pattern redundancy metal;
Measure the flatness of nxm the metal level of zone after cmp, set up the process menu of metal level cmp;
Obtain relation between density gradient and each zone flatness after cmp of density, adjacent area in nxm zone.
As preferably: the lines live width of described isolated lines, half intensive lines and intensive lines is more than or equal to the distinguishable live width of minimum when layer metal level.
As preferably: described redundant pattern array consists of the redundant pattern of same size, and the live width of redundant pattern is more than or equal to the distinguishable live width of minimum when layer metal level.
As preferably: described redundant pattern array consists of the redundant pattern of different size, and the live width of redundant pattern is more than or equal to the distinguishable live width of minimum when layer metal level.
Compared with prior art, the present invention has the redundant metal filling of metal layer application function by use, enlarge the test light mask that produces the defect function in lithographic process window function and monitoring photoetching technique, effectively enlarge lithographic process window and improve the regional area flatness of metal level cmp, effectively improve the efficiency of redundant metal filling of metal layer design and the exploitation of metal level chemical mechanical milling tech, effectively improve the efficiency of the metal level flatness of prediction after cmp and the pattern density adjustment needed, can reduce the cost of institute's use test photomask in the photoetching process module simultaneously.
The accompanying drawing explanation
Fig. 1 is the domain schematic diagram of test light mask plate of the present invention.
Fig. 2 is the schematic diagram of test light mask plate of the present invention.
Fig. 3 a is the redundant pattern array schematic diagram of same size of the present invention.
Fig. 3 b is the redundant pattern array schematic diagram of different size of the present invention.
Fig. 4 is the sectional view after the metal level cmp in the application of test light mask plate of the present invention.
Embodiment
The present invention is further detailed in conjunction with the accompanying drawings below:
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subject to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the present invention is described in detail in detail; for ease of explanation; the sectional view that means device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Refer to shown in Fig. 1, in the present embodiment, work as the flatness of layer metal level and the relation of pattern density for test, the domain of described test light mask plate is by nxm zone (D11, D12, D21, D22...Dnm) form, each described zone has different pattern densities, each zone comprises isolated lines 1, Sub-resolution assist features 11 and the distinguishable rate auxiliary pattern 12 of isolated lines both sides, half intensive lines 2, intensive lines 3 and redundant pattern array 4, described half intensive lines 2 and intensive lines 3 are as producing the monitoring figure of defect in monitoring photoetching technique.The Sub-resolution assist features 11 of described isolated lines 1 both sides and distinguishable rate auxiliary pattern 12 are for enlarging lithographic process window and improving the regional area flatness of metal level cmp, and the lines live width of described isolated lines 1, half intensive lines 2 and intensive lines 3 is more than or equal to the distinguishable live width of minimum when layer metal level.As shown in Figure 3 a and Figure 3 b shows, described redundant pattern array 4 consists of the redundant pattern of same size or different size, and the live width of redundant pattern is more than or equal to the distinguishable live width of minimum when layer metal level.
The application of above-mentioned test light mask plate comprises the following steps:
Obtain the pattern density in nxm zone in described optical mask plate domain and the pattern density gradient of adjacent area;
Deposit low dielectric constant films on substrate;
Apply photoresist on low dielectric constant films, photoetching forms the figure of test light mask plate;
By the measurement to various lines live widths in photoresist, set up Sub-resolution assist features and the distinguishable rate auxiliary pattern database on the impact of lines live width;
The etching low dielectric constant film-shaped becomes corresponding to the metallic channel of half intensive lines and intensive lines, corresponding to the redundancy metal groove of redundant pattern with corresponding to the auxiliary pattern redundancy metal groove of distinguishable rate auxiliary pattern;
At said structure surface deposition metal;
Cmp forms the metal level be comprised of wire metal, redundancy metal and auxiliary pattern redundancy metal, and the sectional view after grinding as shown in Figure 4, is specially low dielectric constant films 5, wire metal 6, redundancy metal 7 and auxiliary pattern redundancy metal 8;
Measure the flatness of nxm the metal level of zone after cmp, set up the process menu of metal level cmp;
Set up the database of relation between density gradient and each zone flatness after cmp of density, adjacent area in nxm zone.
According to the pattern density gradient of pattern density and the adjacent area of client's product, utilize the metal level flatness of above-mentioned database prediction after cmp and make the design that redundancy metal that pattern density adjusts is filled.
The present invention has the redundant metal filling of metal layer application function by use, enlarge the test light mask that produces the defect function in lithographic process window function and monitoring photoetching technique, effectively improve the efficiency of redundant metal filling of metal layer design and the exploitation of metal level chemical mechanical milling tech, effectively enlarge lithographic process window and improve the regional area flatness of metal level cmp, effectively improve the efficiency of the metal level flatness of prediction after cmp and the pattern density adjustment needed, can reduce the cost of institute's use test photomask in the photoetching process module simultaneously.
The foregoing is only preferred embodiment of the present invention, all equalizations of doing according to the claims in the present invention scope change and modify, and all should belong to the covering scope of the claims in the present invention.
Claims (4)
1. the application of a test light mask plate, described test light mask plate is worked as the flatness of layer metal level and the relation of pattern density for test, the domain of described test light mask plate consists of m zone of n x, each described zone has different pattern densities, each zone comprises isolated lines, Sub-resolution assist features and the distinguishable rate auxiliary pattern of isolated lines both sides, half intensive lines, intensive lines and redundant pattern array, described redundant pattern array consists of the redundant pattern of different size or same size, wherein n is more than or equal to 1 integer, m is more than or equal to 1 integer, it is characterized in that, comprise the following steps:
Obtain the pattern density in m zone of n x in described test light mask plate layout and the pattern density gradient of adjacent area;
Deposit low dielectric constant films on substrate;
Apply photoresist on low dielectric constant films, photoetching forms the figure of test light mask plate;
By the measurement to various lines live widths in photoresist, obtain Sub-resolution assist features and the distinguishable rate auxiliary pattern information on the impact of lines live width;
The etching low dielectric constant film-shaped becomes corresponding to the metallic channel of half intensive lines and intensive lines, corresponding to the redundancy metal groove of redundant pattern with corresponding to the auxiliary pattern redundancy metal groove of distinguishable rate auxiliary pattern;
At said structure surface deposition metal;
Cmp forms the metal level be comprised of wire metal, redundancy metal and auxiliary pattern redundancy metal;
Measure the flatness of m zone metal level after cmp of n x, set up the process menu of metal level cmp;
Obtain relation between density gradient and each zone flatness after cmp of density, adjacent area in m of n x zone.
2. the application of test light mask plate according to claim 1 is characterized in that: the lines live width of described isolated lines, half intensive lines and intensive lines is more than or equal to the distinguishable live width of minimum when layer metal level.
3. the application of test light mask plate according to claim 1 is characterized in that: described redundant pattern array consists of the redundant pattern of same size, and the live width of redundant pattern is more than or equal to the distinguishable live width of minimum when layer metal level.
4. the application of test light mask plate according to claim 1 is characterized in that: described redundant pattern array consists of the redundant pattern of different size, and the live width of redundant pattern is more than or equal to the distinguishable live width of minimum when layer metal level.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110355463 CN102520578B (en) | 2011-11-10 | 2011-11-10 | Testing photomask and application thereof |
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| CN 201110355463 CN102520578B (en) | 2011-11-10 | 2011-11-10 | Testing photomask and application thereof |
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| CN102520578A CN102520578A (en) | 2012-06-27 |
| CN102520578B true CN102520578B (en) | 2013-12-18 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199057B (en) * | 2013-03-14 | 2015-04-08 | 上海华力微电子有限公司 | Optical mask applied to dual damascene metal interconnection process |
| CN105446072B (en) * | 2014-08-26 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | Mask and forming method thereof |
| CN104239612B (en) * | 2014-08-27 | 2020-06-09 | 上海华力微电子有限公司 | Method for improving laser annealing heat distribution |
| CN105988285B (en) * | 2015-01-30 | 2019-09-27 | 中芯国际集成电路制造(上海)有限公司 | Test mask and test method |
| DE102016105647B4 (en) * | 2016-03-28 | 2021-08-12 | Krohne Messtechnik Gmbh | Guide element for an antenna and method for producing such a guide element |
| CN109711006A (en) * | 2018-12-11 | 2019-05-03 | 上海华力微电子有限公司 | A kind of redundant pattern adding method |
| US11867711B2 (en) | 2019-05-30 | 2024-01-09 | Esko-Graphics Imaging Gmbh | Process and apparatus for automatic measurement of density of photopolymer printing plates |
| CN110231753A (en) * | 2019-07-10 | 2019-09-13 | 德淮半导体有限公司 | Mask and its configuration method, lithography system and photolithography method |
| CN110491776A (en) * | 2019-08-09 | 2019-11-22 | 长江存储科技有限责任公司 | A kind of manufacturing method of mask and semiconductor devices |
| CN113204166B (en) * | 2021-04-21 | 2023-12-01 | 华虹半导体(无锡)有限公司 | Astigmatic test mask and astigmatic detection method of photoetching machine |
| CN113506790B (en) * | 2021-09-08 | 2022-01-04 | 北京芯愿景软件技术股份有限公司 | Chip, preparation method thereof and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290923A (en) * | 2007-04-17 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Test base, test base mask and forming method of test base |
| CN102087468A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Photomask |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8158334B2 (en) * | 2008-01-14 | 2012-04-17 | International Business Machines Corporation | Methods for forming a composite pattern including printed resolution assist features |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101290923A (en) * | 2007-04-17 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Test base, test base mask and forming method of test base |
| CN102087468A (en) * | 2009-12-04 | 2011-06-08 | 中芯国际集成电路制造(上海)有限公司 | Photomask |
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