CN105428226B - A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method - Google Patents
A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method Download PDFInfo
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- CN105428226B CN105428226B CN201510718906.1A CN201510718906A CN105428226B CN 105428226 B CN105428226 B CN 105428226B CN 201510718906 A CN201510718906 A CN 201510718906A CN 105428226 B CN105428226 B CN 105428226B
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- sheet resistance
- phosphorus source
- dlv
- source diffusion
- liquid phosphorus
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000009792 diffusion process Methods 0.000 claims abstract description 42
- 239000007788 liquid Substances 0.000 claims abstract description 38
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 36
- 239000011574 phosphorus Substances 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 229910019213 POCl3 Inorganic materials 0.000 claims abstract description 3
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 14
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 6
- 238000010924 continuous production Methods 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
Abstract
The invention discloses a kind of tubular type POCl3Diffused sheet resistance automatic adjusting method.It includes liquid phosphorus source diffusion facilities, automatic loading/unloading machine and with liquid phosphorus source diffusion facilities, the computer of automatic loading/unloading machine connection, each liquid phosphorus source diffusion facilities has the corresponding DLV files automatically generated by software program, calculator memory, which stores up above-mentioned DLV files and the sheet resistance value of warm area can be corresponded to each liquid phosphorus source diffusion facilities, carries out calculating processing, in process of production, liquid phosphorus source diffusion facilities calls and reads the relevant parameter of DLV files automatically, pass through the calling to DLV parameters, automatically the diffusion temperature of different warm areas in liquid phosphorus source diffusion facilities is adjusted.After adopting with the aforedescribed process, the data link variable files DLV of foundation, in process of production, by the automatic calling of DLV files, automatically adjusting for continuous flow procedure diffused sheet resistance is realized.
Description
Technical field
The present invention relates to a kind of preparation method of crystal silicon solar energy battery, specifically a kind of tubular type POCl3Diffusion
Sheet resistance automatic adjusting method.
Background technology
At present, mainly adopted for pn-junction in crystal-silicon solar cell manufacturing, P type substrate crystal silicon solar batteries diffusion
With tubular type liquid phosphorus source High temperature diffusion mode；Typically regulate and control small model by adjusting the small nitrogen flow of furnace tube temperature or carrying phosphorus source
Diffused sheet resistance fluctuation in enclosing.The common methods of furnace tube temperature adjustment are in consecutive numbers pipe, keep deposition steps temperature-resistant, treat
Sheet resistance is fluctuated to certain limit, and deposition steps temperature is adjusted, then continuous production number pipe again, with this repeatedly；It is another
The method then difference based on the sheet resistance that actually measures with target sheet resistance, based on both there is experience, by small nitrogen flow set change come
Adjust diffused sheet resistance.Although these methods serve the steady operation of diffused sheet resistance to a certain extent, boiler tube is limited to certainly
The lasting change of body difference, phosphorus source source bottle liquid level height, these methods are respectively provided with significant limitation.Meanwhile it is limited to engineering
Teacher's capacity variance, above-mentioned adjusting method have more very big risk in itself.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of automatic tune that can realize continuous flow procedure diffused sheet resistance
The tubular type POCl of section3Diffused sheet resistance automatic adjusting method.
In order to solve the above-mentioned technical problem, tubular type POCl of the invention3Diffused sheet resistance automatic adjusting method, including liquid phosphorus
Source diffusion facilities, automatic loading/unloading machine and the computer being connected with liquid phosphorus source diffusion facilities, automatic loading/unloading machine, respectively
Individual liquid phosphorus source diffusion facilities has a corresponding DLV files automatically generated by software program, in calculator memory storage
State DLV files and the sheet resistance value of warm area can be corresponded to each liquid phosphorus source diffusion facilities and carry out calculating processing, it is each during calculating
Warm area separately independently calculates, and corresponding formula is as follows：
CTEMPm=(A (R) m-Rtarget)×Kcorr+CTEMP+TEMde
Wherein A (R)mThe sheet resistance average of the corresponding warm area of continuous production n boats is represented, Ri is the sheet resistance that the i-th boat corresponds to warm area
Calculated value, CTEMPmFor the adjust automatically temperature value of the m times, RtargetFor goal-selling sheet resistance value, KcorrTo be high with phosphorus source liquid level
The temperature correction coefficient of the related the m times temperature adjustment of degree, CTEMP are that boiler tube initially sets depositing temperature, TEMdeFor boiler tube not
With the depositing temperature offset of warm area；
In process of production, liquid phosphorus source diffusion facilities calls and reads the relevant parameter of DLV files automatically, by right
The calling of DLV parameters, the diffusion temperature of different warm areas in liquid phosphorus source diffusion facilities is adjusted automatically.
The computer is also connected with a sheet resistance test equipment, the sheet resistance test equipment can other side's resistance surveyed
Examination.
The liquid phosphorus source diffusion facilities is tubular diffusion furnace.
After adopting with the aforedescribed process, due to each liquid phosphorus source diffusion facilities have it is corresponding by software program from
The DLV files of dynamic generation, calculator memory store up above-mentioned DLV files and can correspond to warm area to each liquid phosphorus source diffusion facilities
Sheet resistance value carries out calculating processing, the data link variable files DLV thus established, in process of production, by DLV files from
It is dynamic to call, realize automatically adjusting for continuous flow procedure diffused sheet resistance；Except can realize stabilization, uniform boiler tube diffused sheet resistance
Outside, the DLV files individually stored based on each boiler tube, the diffusional deposition for calculating each pipe difference warm area obtained can be preserved in detail
Temperature；Based on said temperature combined data, the depositing temperature difference of different boiler tubes can be conveniently and efficiently contrasted, and then is more had
Realize the global optimization of diffusion workshop section in effect ground.
Embodiment
With reference to embodiment, to the POCl of the present invention3Diffused sheet resistance automatic adjusting method is made further detailed
Explanation.
The POCl of the present invention3Diffused sheet resistance automatic adjusting method, including liquid phosphorus source diffusion facilities, automatic charging ＆ discharging machine
Device, sheet resistance test equipment and the computer being connected with liquid phosphorus source diffusion facilities, automatic charging ＆ discharging machine, sheet resistance test equipment,
Liquid phosphorus source diffusion facilities is preferably tubular diffusion furnace, and automatic charging ＆ discharging machine is preferably Robert section automatic loading/unloading equipment, side
It is preferably Semilab sheet resistances automatic detection (test light voltage) equipment to hinder test equipment, for each liquid phosphorus source diffusion facilities
With the DLV files automatically generated by software program, calculator memory stores up above-mentioned DLV files and can be to each liquid phosphorus source
The sheet resistance value that diffusion facilities corresponds to warm area carries out calculating processing, and formula is as follows：
RLZ=R1、RCLZ=(R2+R3)/2、RCZ=(R4+R5)/2、RCGZ=(R6+R7)、RGZ=R8
The sheet resistance that the furnace tube temperature of diffusional deposition passes through 5 warm areas of correspondence of preceding n boats (being adjusted according to actual conditions)
Average calculates completion automatically, and 5 warm areas separately independently calculate during calculating, and corresponding formula is as follows：
CTEMPm=(A (R) m-Rtarget)×Kcorr+CTEMP+TEMde
Wherein A (R)mThe sheet resistance average of the corresponding warm area of continuous production n boats is represented, Ri is the sheet resistance that the i-th boat corresponds to warm area
Calculated value, CTEMPmFor the adjust automatically temperature value of the m times, RtargetFor goal-selling sheet resistance value, KcorrTo be high with phosphorus source liquid level
The temperature correction coefficient of the related the m times temperature adjustment of degree, CTEMP are that boiler tube initially sets depositing temperature, TEMdeFor boiler tube not
With the depositing temperature offset of warm area；CTEMPm, Kcorr, TEMde, CTEMP is as DLV parameter parts, i.e. data link change
Amount, the parameters in series can be individually formed DLV files.
In actual production process, need in DLV files goal-selling sheet resistance Rtarget, it is warm that diffusion furnace initially sets deposition
Spend CTEMP, the depositing temperature offset TEM of boiler tube difference warm areade, and the temperature adjustment amendment with source bottle liquid level height correlation
COEFFICIENT Kcorr(KcorrFor the class value set for different liquid levels, change with liquid level, the K of callingcorrIt is worth also therewith
Change).After completing setting value, liquid phosphorus source diffusion facilities calls and reads the relevant parameter of DLV files automatically, by right
The calling of DLV parameters, the diffusion temperature of different warm areas in liquid phosphorus source diffusion facilities is adjusted automatically, so as to ensure between pipe
The uniformity of diffused sheet resistance in the stability and pipe of diffused sheet resistance, in addition, sheet resistance test equipment can other side's resistance tested,
Such as occur mistake in test process or insecure sheet resistance value, human intervention and error result can be removed, so as to protect
Card calculates the boiler tube difference warm area setting depositing temperature CTEMP obtainedmAccuracy；In addition, it is directed to TEMdeValue, in production process
In can similarly give necessary adjustment as needed, optimized by DLV automatic compensating methods, realize following producing line sheet resistance control
System；The diffused sheet resistance of multiple batch crystal silicon solar cell sheets of different boiler tubes fluctuates in narrow range；Effectively realize
The accurate control of tubular type liquid phosphorus source High temperature diffusion sheet resistance, in pipe the sheet resistance uniformity controlling of different warm areas within 2.5%,
Reach top standard of the same trade.
Claims (3)
- A kind of 1. POCl3Diffused sheet resistance automatic adjusting method, it is characterised in that：Including liquid phosphorus source diffusion facilities, automatic loading/unloading Machine and the computer being connected with liquid phosphorus source diffusion facilities, automatic loading/unloading machine, each liquid phosphorus source diffusion are set Standby to have the corresponding DLV files automatically generated by software program, the calculator memory stores up above-mentioned DLV files and energy Enough sheet resistance values for corresponding to warm area to each liquid phosphorus source diffusion facilities carry out calculating processing, and each warm area is separately only during calculating Vertical to calculate, corresponding formula is as follows：<mrow> <mi>A</mi> <mrow> <mo>(</mo> <mi>R</mi> <mo>)</mo> </mrow> <mi>m</mi> <mo>=</mo> <mfrac> <mrow> <msubsup> <mo>&Sigma;</mo> <mrow> <mi>i</mi> <mo>=</mo> <mn>1</mn> </mrow> <mi>n</mi> </msubsup> <mrow> <mi>R</mi> <mi>i</mi> </mrow> </mrow> <mi>n</mi> </mfrac> </mrow>CTEMPm=(A (R) m-Rtarget)×Kcorr+CTEMP+TEMdeWherein A (R)mThe sheet resistance average of the corresponding warm area of continuous production n boats is represented, Ri is the sheet resistance calculating that the i-th boat corresponds to warm area Value, CTEMPmFor the adjust automatically temperature value of the m times, RtargetFor goal-selling sheet resistance value, KcorrFor with phosphorus source liquid level phase The temperature correction coefficient for the m times temperature adjustment closed, CTEMP are that boiler tube initially sets depositing temperature, TEMdeFor boiler tube not equality of temperature The depositing temperature offset in area；In process of production, liquid phosphorus source diffusion facilities calls and reads the relevant parameter of DLV files automatically, by joining to DLV Several calling, the diffusion temperature of different warm areas in liquid phosphorus source diffusion facilities is adjusted automatically.
- 2. according to the POCl described in claim 13Diffused sheet resistance automatic adjusting method, it is characterised in that：The computer is also with one The connection of individual sheet resistance test equipment, the sheet resistance test equipment can other side's resistance tested.
- 3. according to the POCl described in claim 13Diffused sheet resistance automatic adjusting method, it is characterised in that：The liquid phosphorus source diffusion Equipment is tubular diffusion furnace.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510718906.1A CN105428226B (en) | 2015-10-29 | 2015-10-29 | A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method |
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|---|---|---|---|
| CN201510718906.1A CN105428226B (en) | 2015-10-29 | 2015-10-29 | A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method |
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| CN105428226A CN105428226A (en) | 2016-03-23 |
| CN105428226B true CN105428226B (en) | 2017-12-15 |
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| CN106601871B (en) * | 2016-12-12 | 2019-03-15 | 徐州鑫宇光伏科技有限公司 | Spread the regulation method and device of source temperature |
| CN108198771B (en) * | 2017-12-28 | 2020-05-15 | 苏州阿特斯阳光电力科技有限公司 | Flow control method and flow control device |
| CN114512571A (en) * | 2021-12-20 | 2022-05-17 | 浙江爱旭太阳能科技有限公司 | Intelligent regulation and control method, system and equipment for diffusion sheet resistance and readable storage medium |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103092230A (en) * | 2013-01-07 | 2013-05-08 | 济南大学 | Diffusion furnace smart temperature control system |
| CN104391530A (en) * | 2014-10-30 | 2015-03-04 | 晶澳太阳能有限公司 | Tubular diffusion furnace temperature area automatic calibration technology based on PID self-setting |
| CN104532212A (en) * | 2015-01-05 | 2015-04-22 | 上海微世半导体有限公司 | LPCVD initial-deposition furnace temperature accurate control method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2276057B1 (en) * | 2009-05-29 | 2011-11-02 | Roth & Rau AG | In-line gas-phase diffusion furnace |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103092230A (en) * | 2013-01-07 | 2013-05-08 | 济南大学 | Diffusion furnace smart temperature control system |
| CN104391530A (en) * | 2014-10-30 | 2015-03-04 | 晶澳太阳能有限公司 | Tubular diffusion furnace temperature area automatic calibration technology based on PID self-setting |
| CN104532212A (en) * | 2015-01-05 | 2015-04-22 | 上海微世半导体有限公司 | LPCVD initial-deposition furnace temperature accurate control method |
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Address after: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Patentee after: Jinneng clean energy technology stock company Address before: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Patentee before: Jin Neng Clean-tech Co., Ltd |
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