CN104532212A - LPCVD initial-deposition furnace temperature accurate control method - Google Patents

LPCVD initial-deposition furnace temperature accurate control method Download PDF

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Publication number
CN104532212A
CN104532212A CN201510005536.7A CN201510005536A CN104532212A CN 104532212 A CN104532212 A CN 104532212A CN 201510005536 A CN201510005536 A CN 201510005536A CN 104532212 A CN104532212 A CN 104532212A
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China
Prior art keywords
feedforward
lpcvd
furnace temperature
time
current value
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CN201510005536.7A
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CN104532212B (en
Inventor
丁波
李轶
陈瀚
侯金松
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SHANGHAI MICRO-SEMI WORLD Co Ltd
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SHANGHAI MICRO-SEMI WORLD Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention discloses an LPCVD initial-deposition furnace temperature accurate control method. When gas enters, According to the flow and the vacuum degree of the gas which enters, the lowering range of temperature and the time for a furnace body to be heated to constant temperature are predicted, feedforward feeding is carried out so that constant furnace temperature during gas entering can be guaranteed, fluctuation is avoided, LPCVD furnace temperature can be controlled in real time, LPCVD furnace temperature is controlled stably, furnace temperature fluctuation is avoided, stable operation of an LPCVD furnace is achieved, and accordingly the consistency of an LPCVD initial-deposition film is guaranteed.

Description

The accuracy control method of the furnace temperature of LPCVD embryo deposit
Technical field
The invention belongs to LPCVD deposition arts, particularly a kind of method for controlling furnace temperature of embryo deposit of LPCVD cvd furnace.
Background technology
Along with the development of microelectronics and the raising of production level, the surface states such as the PN junction of semi-conductor discrete power device are all obtained by LPCVD, and the good job of the film quality of LPCVD deposition is most important, the composition of film, component proportions and homogeneity all affect the final parameter of product, therefore obtain the higher film of quality and become primary selection, therefore this highlights higher requirement to the furnace temperature of LPCVD, and LPCVD electrical heater key index is exactly that furnace temperature is constant, when gas passes into time, furnace temperature can decline, cause the embryo deposit film contacted with PN junction just defective, at present, temperature field also adopts pid control mode in a large number, and it carrys out control temperature by regulation output power.Temperature controlled processes has more non-linear, hysteresis quality, and often make disturbance not perceive in time due to delayed, regulating effect can not reflect in good time, thus produces larger overshoot or vibration; This makes the film deposited have certain defect, is therefore necessary to be improved the accurate control of furnace temperature.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of accuracy control method avoiding the furnace temperature of the LPCVD embryo deposit of furnace temperature fluctuation when passing into gas, to overcome the deficiency that prior art exists.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
An accuracy control method for the furnace temperature of LPCVD embryo deposit, is characterized in that, comprises following steps:
S1, according to the value of the flow measurement furnace temperature fluctuation amount of the size of different butterfly valve opening angles, pump pumping speed, different process gass and time, determine to segment progression according to control accuracy, calculate feedforward heating current value corresponding under different process gas flows and different vacuum tightness and feedforward time;
S2, the four-dimensional mapping table be made up of gas flow, vacuum tightness, corresponding feedforward heating current value, feedforward time is inputted in computer;
According to after required processing condition setting gas flow, vacuum tightness in S3, production, carry out feedforward by computer control LPCVD stove according to feedforward heating current value and feedforward time and heat
After S4, feedforward heating complete, in stove, pass into gas according to processing condition.
The present invention adopts technique scheme, when passing into gas, according to passing into flow and the vacuum tightness of gas, doping time that amplitude that temperature declines and body of heater be warmed to steady temperature carries out feedforward and heats, so just can ensure that furnace temperature is constant when gas passes into, not fluctuation; And can precisely, control LPCVD furnace temperature in real time, realize stability contorting LPCVD stove furnace temperature, avoid the fluctuation of furnace temperature, realize the steady running of LPCVD stove, thus ensure that the consistence of LPCVD embryo deposit film.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail:
Fig. 1 is schematic flow sheet of the present invention;
Embodiment
As shown in Figure 1, the accuracy control method of the furnace temperature of LPCVD embryo deposit of the present invention, comprises following steps:
S1, according to the value of the flow measurement furnace temperature fluctuation amount of the size of different butterfly valve opening angles, pump pumping speed, different process gass and time, determine to segment progression according to control accuracy, calculate feedforward heating current value corresponding under different process gas flows and different vacuum tightness and feedforward time, as shown in the table:
S2, the four-dimensional mapping table be made up of gas flow, vacuum tightness, corresponding feedforward heating current value, feedforward time is inputted in computer;
According to after required processing condition setting gas flow, vacuum tightness in S3, production, carry out feedforward by computer control LPCVD stove according to feedforward heating current value and feedforward time and heat;
After S4, feedforward heating complete, in stove, pass into gas according to processing condition.
By detecting, the LPCVD embryo deposit film adopting such scheme to produce is consistent.
The above; it is only preferred embodiment of the present invention; not any pro forma restriction is done to the present invention; have in any art and usually know the knowledgeable; if in the protection domain not departing from claim proposed by the invention; utilize the Equivalent embodiments that the local done by disclosed technology contents is changed or modified, and do not depart from technical characteristic content of the present invention, all still belong in the scope of the technology of the present invention feature.

Claims (1)

1. an accuracy control method for the furnace temperature of LPCVD embryo deposit, is characterized in that, comprises following steps:
S1, according to the value of the flow measurement furnace temperature fluctuation amount of the size of different butterfly valve opening angles, pump pumping speed, different process gass and time, determine to segment progression according to control accuracy, calculate feedforward heating current value corresponding under different process gas flows and different vacuum tightness and feedforward time;
S2, the four-dimensional mapping table be made up of gas flow, vacuum tightness, corresponding feedforward heating current value, feedforward time is inputted in computer;
According to after required processing condition setting gas flow, vacuum tightness in S3, production, carry out feedforward by computer control LPCVD stove according to feedforward heating current value and feedforward time and heat
After S4, feedforward heating complete, in stove, pass into gas according to processing condition.
CN201510005536.7A 2015-01-05 2015-01-05 The accuracy control method of the furnace temperature of LPCVD embryo deposits Active CN104532212B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510005536.7A CN104532212B (en) 2015-01-05 2015-01-05 The accuracy control method of the furnace temperature of LPCVD embryo deposits

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Application Number Priority Date Filing Date Title
CN201510005536.7A CN104532212B (en) 2015-01-05 2015-01-05 The accuracy control method of the furnace temperature of LPCVD embryo deposits

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CN104532212A true CN104532212A (en) 2015-04-22
CN104532212B CN104532212B (en) 2017-11-10

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428226A (en) * 2015-10-29 2016-03-23 晋能清洁能源科技有限公司 Tubular POCl3 diffusion sheet resistance automatic adjusting method
CN117646198A (en) * 2024-01-30 2024-03-05 浙江大学 Automatic control method and system for pressure of atomic-level-precision CVD equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056568A (en) * 2009-11-30 2010-03-11 Hitachi Kokusai Electric Inc Semiconductor manufacturing device, and display method and abnormality processing method in semiconductor device manufacturing device
CN202380089U (en) * 2011-12-01 2012-08-15 深圳市捷佳伟创新能源装备股份有限公司 PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system
CN103103467A (en) * 2013-01-25 2013-05-15 河北钢铁股份有限公司邯郸分公司 Temperature control method of hot-rolled thick-specification galvanized plate heating furnace
CN104049649A (en) * 2013-03-14 2014-09-17 宝山钢铁股份有限公司 Model control method of heating furnace temperature
CN104073623A (en) * 2013-03-30 2014-10-01 宝山钢铁股份有限公司 Roller hearth type annealing furnace temperature control method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056568A (en) * 2009-11-30 2010-03-11 Hitachi Kokusai Electric Inc Semiconductor manufacturing device, and display method and abnormality processing method in semiconductor device manufacturing device
CN202380089U (en) * 2011-12-01 2012-08-15 深圳市捷佳伟创新能源装备股份有限公司 PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system
CN103103467A (en) * 2013-01-25 2013-05-15 河北钢铁股份有限公司邯郸分公司 Temperature control method of hot-rolled thick-specification galvanized plate heating furnace
CN104049649A (en) * 2013-03-14 2014-09-17 宝山钢铁股份有限公司 Model control method of heating furnace temperature
CN104073623A (en) * 2013-03-30 2014-10-01 宝山钢铁股份有限公司 Roller hearth type annealing furnace temperature control method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428226A (en) * 2015-10-29 2016-03-23 晋能清洁能源科技有限公司 Tubular POCl3 diffusion sheet resistance automatic adjusting method
CN105428226B (en) * 2015-10-29 2017-12-15 晋能清洁能源科技有限公司 A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method
CN117646198A (en) * 2024-01-30 2024-03-05 浙江大学 Automatic control method and system for pressure of atomic-level-precision CVD equipment
CN117646198B (en) * 2024-01-30 2024-04-23 浙江大学 Automatic control method and system for pressure of atomic-level-precision CVD equipment

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