CN104532212B - The accuracy control method of the furnace temperature of LPCVD embryo deposits - Google Patents
The accuracy control method of the furnace temperature of LPCVD embryo deposits Download PDFInfo
- Publication number
- CN104532212B CN104532212B CN201510005536.7A CN201510005536A CN104532212B CN 104532212 B CN104532212 B CN 104532212B CN 201510005536 A CN201510005536 A CN 201510005536A CN 104532212 B CN104532212 B CN 104532212B
- Authority
- CN
- China
- Prior art keywords
- feedforward
- lpcvd
- furnace temperature
- gas
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of accuracy control method of the furnace temperature of LPCVD embryo deposits, when being passed through gas, according to the flow and vacuum for being passed through gas, predict the amplitude of temperature decline and body of heater is warmed to time of steady temperature and carries out feedforward heating, this ensures that furnace temperature is constant when gas is passed through, do not fluctuate；And LPCVD furnace temperatures can be controlled precisely, in real time, stability contorting LPCVD stove furnace temperature is realized, the fluctuation of furnace temperature is avoided, realizes the stable operation of LPCVD stoves, so as to ensure that the uniformity of LPCVD embryo deposit films.
Description
Technical field
The invention belongs to LPCVD (low-pressure chemical vapor deposition) deposition arts, more particularly to a kind of LPCVD depositions
The method for controlling furnace temperature of the embryo deposit of stove.
Background technology
With the development of microelectric technique and the raising of the level of production, the surface state such as the PN junction of semiconductor discrete power device
All obtained by LPCVD, and the good job of the film quality of LPCVD depositions is most important, the composition of film, component ratio and
Even property all affects the final parameter of product, therefore obtains the higher film of quality and turn into primary selection, therefore this is to LPCVD
Furnace temperature highlight higher requirement, and LPCVD electric furnace key indexs are exactly that furnace temperature is constant, when gas is passed through, stove
Temperature can decline, and the embryo deposit film for causing to contact with PN junction is with regard to unqualified；At present, temperature field also largely uses PID control
Mode, it controls temperature by adjusting power output.Temperature controlled processes have than more typical non-linear, hysteresis quality, by
Often preventing disturbance in hysteresis, regulating effect can not reflect in good time from perceiving in time, so as to produce larger overshoot or vibration；This
So that the film of deposition has the defects of certain, it is therefore necessary to which the accurate control to furnace temperature is improved.
The content of the invention
It is initial that the technical problems to be solved by the invention are to provide a kind of LPCVD that furnace temperature fluctuation is avoided when being passed through gas
The accuracy control method of the furnace temperature of deposition, to overcome the shortcomings of the prior art.
In order to solve the above technical problems, the present invention adopts the following technical scheme that：
A kind of accuracy control method of the furnace temperature of LPCVD embryo deposits, it is characterised in that comprise the following steps：
S1, according to different butterfly valve opening angles, pumping speed size, different process gas flow measurement furnace temperature ripple
The value of momentum and time, subdivision series is determined according to control accuracy, calculates different process gas flows and different vacuum
The lower corresponding feedforward heated current value of degree and feedforward time；
S2, the four-dimensional mapping table that will be made up of gas flow, vacuum, corresponding feedforward heated current value, feedforward time
Input in computer；
After setting gas flow and vacuum according to required process conditions in S3, production, LPCVD stoves are controlled by computer
Feedforward heating is carried out according to feedforward heated current value and feedforward time；
After the completion of S4, feedforward heating, gas is passed through into stove according to the process conditions needed for step S3.
The present invention uses above-mentioned technical proposal, when being passed through gas, according to the flow and vacuum for being passed through gas, prediction
Go out the amplitude of temperature decline and body of heater is warmed to time of steady temperature and carries out feedforward heating, this ensures that being passed through in gas
When furnace temperature it is constant, do not fluctuate；And LPCVD furnace temperatures can be controlled precisely, in real time, stability contorting LPCVD stove furnace temperature is realized, is kept away
The fluctuation of furnace temperature is exempted from, has realized the stable operation of LPCVD stoves, so as to ensure that the uniformity of LPCVD embryo deposit films.
Brief description of the drawings
The present invention is described in detail with reference to the accompanying drawings and detailed description：
Fig. 1 is the schematic flow sheet of the present invention；
Embodiment
As shown in figure 1, the accuracy control method of the furnace temperature of the LPCVD embryo deposits of the present invention, is comprised the following steps：
S1, according to different butterfly valve opening angles, pumping speed size, different process gas flow measurement furnace temperature ripple
The value of momentum and time, subdivision series is determined according to control accuracy, calculates different process gas flows and different vacuum
It is the lower corresponding feedforward heated current value of degree and feedforward time, as shown in the table：
S2, the four-dimensional mapping table that will be made up of gas flow, vacuum, corresponding feedforward heated current value, feedforward time
Input in computer；
After setting gas flow and vacuum according to required process conditions in S3, production, LPCVD stoves are controlled by computer
Feedforward heating is carried out according to feedforward heated current value and feedforward time；
After the completion of S4, feedforward heating, gas is passed through into stove according to the process conditions needed for step S3.
By detection, the LPCVD embryo deposit films produced using such scheme are consistent.
It is described above, only it is presently preferred embodiments of the present invention, any formal limitation, Ren Hesuo not is made to the present invention
Have usually intellectual in category technical field, if not departing from scope of the claims proposed by the invention, utilize
The local equivalent embodiment for changing or modifying made by disclosed technology contents, and without departing from the skill of the present invention
Art feature, in the range of still belonging to the technology of the present invention feature.
Claims (1)
1. a kind of accuracy control method of the furnace temperature of low-pressure chemical gaseous phase embryo deposit, it is characterised in that comprise the following steps：
S1, the flow measurement furnace temperature fluctuation according to the fast size of different butterfly valve opening angles and pumping and different process gas
The value of amount and time, subdivision series is determined according to control accuracy, calculates different process gas flows and different vacuum
Lower corresponding feedforward heated current value and feedforward time；
S2, the four-dimensional mapping table input that will be made up of gas flow, vacuum, corresponding feedforward heated current value, feedforward time
In computer；
After setting gas flow and vacuum according to required process conditions in S3, production, low-pressure chemistry is controlled by computer
Gaseous phase deposition stove carries out feedforward heating according to corresponding feedforward heated current value and feedforward time in the four-dimensional mapping table；
After the completion of S4, feedforward heating, gas is passed through into stove according to the process conditions needed for step S3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510005536.7A CN104532212B (en) | 2015-01-05 | 2015-01-05 | The accuracy control method of the furnace temperature of LPCVD embryo deposits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510005536.7A CN104532212B (en) | 2015-01-05 | 2015-01-05 | The accuracy control method of the furnace temperature of LPCVD embryo deposits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104532212A CN104532212A (en) | 2015-04-22 |
| CN104532212B true CN104532212B (en) | 2017-11-10 |
Family
ID=52847826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510005536.7A Active CN104532212B (en) | 2015-01-05 | 2015-01-05 | The accuracy control method of the furnace temperature of LPCVD embryo deposits |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104532212B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428226B (en) * | 2015-10-29 | 2017-12-15 | 晋能清洁能源科技有限公司 | A kind of tubular type POCl3Diffused sheet resistance automatic adjusting method |
| CN117646198B (en) * | 2024-01-30 | 2024-04-23 | 浙江大学 | Automatic control method and system for pressure of atomic-level-precision CVD equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010056568A (en) * | 2009-11-30 | 2010-03-11 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing device, and display method and abnormality processing method in semiconductor device manufacturing device |
| CN202380089U (en) * | 2011-12-01 | 2012-08-15 | 深圳市捷佳伟创新能源装备股份有限公司 | PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system |
| CN103103467A (en) * | 2013-01-25 | 2013-05-15 | 河北钢铁股份有限公司邯郸分公司 | Temperature control method of hot-rolled thick-specification galvanized plate heating furnace |
| CN104049649A (en) * | 2013-03-14 | 2014-09-17 | 宝山钢铁股份有限公司 | Model control method of heating furnace temperature |
| CN104073623A (en) * | 2013-03-30 | 2014-10-01 | 宝山钢铁股份有限公司 | Roller hearth type annealing furnace temperature control method |
-
2015
- 2015-01-05 CN CN201510005536.7A patent/CN104532212B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010056568A (en) * | 2009-11-30 | 2010-03-11 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing device, and display method and abnormality processing method in semiconductor device manufacturing device |
| CN202380089U (en) * | 2011-12-01 | 2012-08-15 | 深圳市捷佳伟创新能源装备股份有限公司 | PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system |
| CN103103467A (en) * | 2013-01-25 | 2013-05-15 | 河北钢铁股份有限公司邯郸分公司 | Temperature control method of hot-rolled thick-specification galvanized plate heating furnace |
| CN104049649A (en) * | 2013-03-14 | 2014-09-17 | 宝山钢铁股份有限公司 | Model control method of heating furnace temperature |
| CN104073623A (en) * | 2013-03-30 | 2014-10-01 | 宝山钢铁股份有限公司 | Roller hearth type annealing furnace temperature control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104532212A (en) | 2015-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101455249B1 (en) | Methods and apparatus for rapidly responsive heat control in plasma processing devices | |
| CN105093931B (en) | A kind of aero-engine Control of Nonlinear Systems device design method | |
| KR101116914B1 (en) | Heat treatment apparatus, auto-tuning method for control contant, and storage medium | |
| Huang et al. | Modified Smith fuzzy PID temperature control in an oil-replenishing device for deep-sea hydraulic system | |
| US8880210B2 (en) | Methods and apparatus for processing substrates using model-based control | |
| TW200815703A (en) | Vaporizer/supplier of material and automatic pressure regulator for use therein | |
| CN103811335B (en) | Silicon oxide film preparation method, oxide thickness control device and oxidation furnace | |
| US10302476B2 (en) | Flow rate control device | |
| CN103940093A (en) | Hot Water Supply Apparatus And Control Method Thereof | |
| CN104532212B (en) | The accuracy control method of the furnace temperature of LPCVD embryo deposits | |
| CN103361608A (en) | Evaporation device | |
| CN104049649B (en) | The model control method of furnace temp | |
| CN103076826A (en) | Multi-temperature-zone temperature control system and control method thereof | |
| CN116607129A (en) | Accurate following control method and device for LPCVD deposition pressure | |
| CN110100141A (en) | For controlling the system and method for the temperature graph of the steel plate in continuous annealing line | |
| CN110209217A (en) | Method for controlling temperature of steam box based on irregular period PID | |
| CN118034028A (en) | PID and adaptive fuzzy control compound control method | |
| CN107130199A (en) | Automatic control method for knife distance of continuous hot-dip galvanizing air knife | |
| CN104155480B (en) | Processing device for semi-finished product of nanoprobe and manufacturing method of nanoprobe | |
| JP2014089549A (en) | Control method and control device | |
| CN205594335U (en) | Developments assignment PID heating control system suitable for high vacuum environment | |
| CN104404479A (en) | Film thickness adjusting optimization method used in CVD (chemical vapor deposition) film forming process | |
| JP2011191008A (en) | Temperature control method and temperature control device for heating object | |
| CN114253313B (en) | Chamber temperature control method and device | |
| CN110109496A (en) | A kind of automatic heating control system for PCVD holding furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |