CN202380089U - PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system - Google Patents
PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system Download PDFInfo
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- CN202380089U CN202380089U CN2011204926379U CN201120492637U CN202380089U CN 202380089 U CN202380089 U CN 202380089U CN 2011204926379 U CN2011204926379 U CN 2011204926379U CN 201120492637 U CN201120492637 U CN 201120492637U CN 202380089 U CN202380089 U CN 202380089U
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- temperature
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- control
- well heater
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Abstract
The utility model discloses a PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system comprising a main adjusting device, a secondary adjusting device, a heater, a first temperature sensor arranged on a furnace wall, and a second temperature sensor arranged on a hearth. The main adjusting device, the secondary adjusting device and the heater are sequentially connected; the first temperature sensor is connected with the main adjusting device; and the second temperature sensor is connected with the secondary adjusting device. The PECVD furnace temperature control system disclosed by the utility model has an effective furnace temperature controlling effect.
Description
Technical field
The utility model relates to the photovoltaic apparatus field, relates in particular to a kind of PECVD (plasma reinforced chemical vapor deposition) Control for Kiln Temperature system.
Background technology
Along with increasing the weight of of global traditional energy crisis; Human new forms of energy consciousness is revived; Photovoltaic is already through becoming in 21 century and even longer time one of the most potential new industry, still is all to have obtained major progress aspect the application market in technical research, industrialization, and wherein photovoltaic apparatus is the foundation stone of an industry development; Also be the major criterion of weighing industrial maturity, it is determining the ups and downs of industry development.All in all, Chinese photovoltaic apparatus still is in the starting stage, and the various difficult situations that photovoltaic apparatus faces are also obvious: the market of many high-end devices is still captured by foreign capital affiliate; Homemade photovoltaic apparatus is compared with import equipment, and the single technology index is approaching, but level of automation is low slightly; Equipment making is superior inadequately, lacks the core technology of oneself, and innovation ability is not enough or the like all is the photovoltaic apparatus technology major reason that is difficult to make great progress in the last few years.In addition, also come from overseas enterprise to a great extent to the consistent blockade on new techniques of Chinese Enterprise, Chinese photovoltaic apparatus industry just had a little improvement from 2008, and equipment such as diffusion furnace and tubular type PECVD stove appear making in beginning successively.
The PECVD stove is one of frequent equipment that adopts of solar battery sheet factory, and its processing requirement is: the homo(io)thermism that keeps flat-temperature zone in the burner hearth.As shown in Figure 1, the control scheme that the temperature control system of the PECVD stove of prior art adopts is the single loop control system of tubular oven furnace wall temperature, and it comprises TP, setter that is arranged at the furnace wall and the well heater that is used to control furnace temperature.Said TP, setter and well heater connect in regular turn.Said TP is used to detect the temperature of furnace wall and sends it to setter, and setter has the temperature value set, and it is temperature and the said set(ting)value of furnace wall relatively, the Heating temperature of coming control heater according to the result of comparison.Yet, open fire door and during to the body of heater make-up gas disturbances such as fluctuation to load cause control action kou untimely, thereby cause deviation big, controlling quality is poor; In addition, because the heat that high frequency glow produced of well heater causes the interior temperature of stove sharply to rise, thereby interior actual temperature of stove and technique initialization temperature differ greatly, but because temp controlled meter is to detect the furnace wall temperature, almost do not have variation.
Therefore, how to solve the problem of PECVD Control for Kiln Temperature poor effect in the prior art, become the technical problem that current urgent need solves.
The utility model content
The purpose of the utility model provides the effective PECVD Control for Kiln Temperature system of a kind of Control for Kiln Temperature.
The utility model provides a kind of PECVD Control for Kiln Temperature system; Second TP that it comprises master governor, secondary controller, well heater, is arranged at first TP of furnace wall and is arranged at burner hearth; Said master governor, secondary controller and well heater connect successively; Said first TP is connected to said master governor, and said second TP is connected to said secondary controller.
Wherein, said well heater is arranged at said burner hearth.
Wherein, said well heater is a heating tube.
Wherein, said well heater is a resistive heater.
Wherein, said first TP and second TP adopt the RKCHA400 temp controlled meter.
Compared with prior art, the utility model adopts two setters dynamically furnace temperature to be carried out dynamic conditioning, has reduced the influence of external disturbance to furnace temperature greatly, has better controlling performance.
Description of drawings
Fig. 1 is the synoptic diagram of the PECVD Control for Kiln Temperature system of prior art.
Fig. 2 is the synoptic diagram of the PECVD Control for Kiln Temperature system of the utility model.
Embodiment
See also Fig. 2, the PECVD Control for Kiln Temperature system of the utility model comprises master governor, secondary controller, well heater, first TP and second TP.Said master governor, secondary controller and well heater connect successively.Said first TP is connected to said master governor, and it is arranged at the furnace wall, is used to detect the temperature of furnace wall and is sent to said master governor.Said second thermoswitch is connected to said secondary controller, and it is arranged at burner hearth, and it is used to detect the temperature of burner hearth and is sent to said secondary controller.Said master governor has the design temperature of a system, and it is the temperature and the said design temperature of furnace wall relatively, and produces a design temperature to said secondary controller according to result relatively.Said secondary controller passes through the relatively temperature and the said design temperature of burner hearth, thereby controls the up-down of the Heating temperature of said well heater.Said well heater is used for the burner hearth heating, and it can be arranged at burner hearth, and it can be a heating tube, also can be resistive heater.Said first TP and second TP can adopt the RKCHA400 temp controlled meter.The RKCHA400 temp controlled meter is a twin-channel control instruments of high precision, and passage 1 is the monitoring fire box temperature, passage 2 monitoring furnace wall temperatures.
The Control for Kiln Temperature process of the PECVD Control for Kiln Temperature system of the utility model is: when the temperature of furnace wall is lower than the design temperature of system; The set temperature value of said master governor output constantly increases; Thereby cause the design temperature of said secondary controller constantly to increase, thereby the Heating temperature that causes said secondary controller to control said well heater rises, thereby cause the rising of fire box temperature; Thereby further cause the rising of furnace wall temperature, the temperature up to the furnace wall equals the design temperature of system; When the furnace wall be higher than the design temperature of system the time; The set temperature value of said master governor output constantly reduces; Thereby cause the design temperature of said secondary controller constantly to reduce, thereby the Heating temperature that causes said secondary controller to control said well heater descends, thereby cause the decline of fire box temperature; Thereby further cause the decline of furnace wall temperature, the temperature up to the furnace wall equals the design temperature of system.
When the even load fluctuation causes that fire box temperature changes when inflating body and high frequency glow owing to the blow-on door with in burner hearth; When it does not also have enough time to influence the temperature of furnace wall; Second TP that is arranged at burner hearth has detected; Said secondary controller is taked interference protection measure in view of the above immediately, carries out coarse adjustment through the temperature of control heater, can carry out fine tuning once more by said master governor afterwards.
In the PECVD Control for Kiln Temperature system of the utility model; Said secondary controller has characteristics such as first accent, fast accents, coarse adjustment, and said master governor has back accent, characteristics such as accent, fine tuning slowly, two setter actings in conjunction; Improved the response speed of system effectively; Improve regulation quality, the actual temperature of substrate has been carried out real-time intelligent control, improved temperature homogeneity, stability and repeated greatly.
In sum, the utility model adopts two setters dynamically furnace temperature to be carried out dynamic conditioning, has reduced the influence of external disturbance to furnace temperature greatly, has better controlling performance.
Claims (5)
1. PECVD Control for Kiln Temperature system; It is characterized in that; Comprise master governor, secondary controller, well heater, be arranged at first TP of furnace wall and be arranged at second TP of burner hearth; Said master governor, secondary controller and well heater connect successively, and said first TP is connected to said master governor, and said second TP is connected to said secondary controller.
2. PECVD Control for Kiln Temperature according to claim 1 system is characterized in that said well heater is arranged at said burner hearth.
3. PECVD Control for Kiln Temperature according to claim 1 system is characterized in that said well heater is a heating tube.
4. PECVD Control for Kiln Temperature according to claim 1 system is characterized in that said well heater is a resistive heater.
5. PECVD Control for Kiln Temperature according to claim 1 system is characterized in that, said first TP and second TP adopt the RKCHA400 temp controlled meter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204926379U CN202380089U (en) | 2011-12-01 | 2011-12-01 | PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204926379U CN202380089U (en) | 2011-12-01 | 2011-12-01 | PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202380089U true CN202380089U (en) | 2012-08-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204926379U Expired - Lifetime CN202380089U (en) | 2011-12-01 | 2011-12-01 | PECVD (Plasma Enhanced Chemical Vapor Deposition) furnace temperature control system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202380089U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104532212A (en) * | 2015-01-05 | 2015-04-22 | 上海微世半导体有限公司 | LPCVD initial-deposition furnace temperature accurate control method |
-
2011
- 2011-12-01 CN CN2011204926379U patent/CN202380089U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104532212A (en) * | 2015-01-05 | 2015-04-22 | 上海微世半导体有限公司 | LPCVD initial-deposition furnace temperature accurate control method |
| CN104532212B (en) * | 2015-01-05 | 2017-11-10 | 上海微世半导体有限公司 | The accuracy control method of the furnace temperature of LPCVD embryo deposits |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120815 |