CN201567372U - Air inlet control device in plasma chemical vapor deposition equipment - Google Patents
Air inlet control device in plasma chemical vapor deposition equipment Download PDFInfo
- Publication number
- CN201567372U CN201567372U CN2009200950193U CN200920095019U CN201567372U CN 201567372 U CN201567372 U CN 201567372U CN 2009200950193 U CN2009200950193 U CN 2009200950193U CN 200920095019 U CN200920095019 U CN 200920095019U CN 201567372 U CN201567372 U CN 201567372U
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- air inlet
- chemical vapor
- vapor deposition
- plasma chemical
- control device
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Abstract
The utility model relates to an air inlet control device in solar cell production equipment, in particular to an air inlet control device in plasma chemical vapor deposition equipment, which comprises a ventilation pipeline, a temperature probe, a heating probe, a solenoid valve and a PLC controller, wherein the temperature probe, the heating probe and the solenoid valve are arranged in an air inlet pipe and are electrically connected with the PLC controller. With the structure and the unique control method, the air input can be controlled more precisely, and the control is convenient so as to facilitate the adjustment of process parameters, thereby achieving the purpose that the production line controls the air inlet.
Description
Technical field
The utility model relates to the Intaker controller in a kind of manufacture of solar cells equipment, a kind of Intaker controller of apparatus for plasma chemical vapor deposition specifically.
Background technology
In manufacture of solar cells, apparatus for plasma chemical vapor deposition deposits the primary structure of PIN layer as battery on transparent conducting glass.When solar radiation arrives solar cell PIN layer, generate electricity by photovoltaic effect.
Solar cell quality and ranking one very important parameters be the homogeneity of PIN rete.In order to guarantee the homogeneity of PIN rete, just require the uniform air inlet of apparatus for plasma chemical vapor deposition, so the homogeneity of apparatus for plasma chemical vapor deposition air inlet is particularly important with regard to what show in process of production.And in each bin of apparatus for plasma chemical vapor deposition, so when having two or more gas to advance the gas access arrangement, the accurate control of air input is just very important.
And the air intake structure of existing apparatus for plasma chemical vapor deposition is a manual modulation valve, and air inlet adjustment can only be controlled air input by manual regulation.So the mode result of control air input can only cause the air input control accuracy not enough, and manual modulation valve damages easily, causes gas leakage.Need the intake method of article on plasma body chemical vapor phase growing equipment to improve, make the air input of equipment stable, and then guarantee sedimentary homogeneity.
Summary of the invention
The purpose of this utility model is to provide a kind of simple and reasonable, and accurately the pilot-gas air input makes the Intaker controller of apparatus for plasma chemical vapor deposition to the apparatus for plasma chemical vapor deposition of PIN layer uniform deposition.
The purpose of this utility model is achieved in that this Intaker controller comprises vent line, temperature probe, heating probe, magnetic valve, PLC controller, handful is visited in described temperature probe, heating and magnetic valve is arranged in the inlet pipe, and handful is visited in temperature probe, heating and magnetic valve is electrically connected with the PLC controller.
The utility model is owing to adopt said structure and the unique control method, makes the air input of pilot-gas can be more accurate, and control is convenient, is convenient to the adjusting to processing parameter.Reached the purpose of production line air inlet control.
Description of drawings
Fig. 1 is an apparatus for plasma chemical vapor deposition Intaker controller one-piece construction synoptic diagram.
Embodiment
By shown in Figure 1: this Intaker controller comprises vent line 1, temperature probe 2, heating probe 3, magnetic valve 4, PLC controller 5, described temperature probe 2, heating visit to hold in both hands 3 and magnetic valve 4 be arranged in the inlet pipe, temperature probe 2, heating visit hold in both hands 3 and magnetic valve 4 be electrically connected with PLC controller 5.
This PLC controller 5 time variable control principles adopt unique pid algorithm control, and the PID control principle is made up of ratio unit (P), integral unit (I) and differentiation element (D).Ratio (P) regulating effect: be the deviation of reactive system in proportion, in a single day deviation has appearred in system, and ratio is regulated and produced regulating effect immediately, in order to reduce deviation.Integration (I) regulating effect: be to make system eliminate steady-state error, improve no margin.Because error is arranged, integration is regulated and is just carried out, and until indifference, integration is regulated and stopped, and integration is regulated output one value often.Differential (D) regulating effect: the velocity of variation of differential action reflection system deviation signal, have foresight, can predict the trend that deviation changes, therefore can produce leading control action kou, before deviation does not also form, eliminated by derivation regulating action.
During work, when two kinds of gases enter into vent line 1, there is a constant temperature difference to keep between temperature probe 2 and the heating probe 3.When gas flow changes, can take away the heat on temperature probe 2 transmitters, sensor temperature can reduce.For keeping this constant temperature difference, need supplementing energy.When the temperature difference is big more, need additional heat big more.Circuit becomes electrical signal output by calculating with the flow size conversion.Signal is sent in the PLC controller 5 and handles, and PLC is used for controlling magnetic valve 4 by PID, to change what of air input.Can accomplish timely monitor by PLC controller 5, accurately control.Make the ionization of back even, further guarantee the homogeneity of plated film.
Claims (1)
1. the Intaker controller in the apparatus for plasma chemical vapor deposition, it is characterized in that: this Intaker controller comprises vent line (1), temperature probe (2), heating probe (3), magnetic valve (4), PLC controller (5), (3) visit are held in both hands in described temperature probe (2), heating and magnetic valve (4) is arranged in the inlet pipe, and handful (3) is visited in temperature probe (2), heating and magnetic valve (4) is electrically connected with PLC controller (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200950193U CN201567372U (en) | 2009-12-17 | 2009-12-17 | Air inlet control device in plasma chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200950193U CN201567372U (en) | 2009-12-17 | 2009-12-17 | Air inlet control device in plasma chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201567372U true CN201567372U (en) | 2010-09-01 |
Family
ID=42659657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200950193U Expired - Fee Related CN201567372U (en) | 2009-12-17 | 2009-12-17 | Air inlet control device in plasma chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201567372U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103590004A (en) * | 2012-08-15 | 2014-02-19 | 苏州宏久航空防热材料科技有限公司 | Plasma physical and chemical codeposition apparatus and deposition method thereof |
-
2009
- 2009-12-17 CN CN2009200950193U patent/CN201567372U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103590004A (en) * | 2012-08-15 | 2014-02-19 | 苏州宏久航空防热材料科技有限公司 | Plasma physical and chemical codeposition apparatus and deposition method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100901 Termination date: 20181217 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |