CN203007382U - Control system of copper-indium-gallium-diselenide thin film battery - Google Patents
Control system of copper-indium-gallium-diselenide thin film battery Download PDFInfo
- Publication number
- CN203007382U CN203007382U CN2012207346755U CN201220734675U CN203007382U CN 203007382 U CN203007382 U CN 203007382U CN 2012207346755 U CN2012207346755 U CN 2012207346755U CN 201220734675 U CN201220734675 U CN 201220734675U CN 203007382 U CN203007382 U CN 203007382U
- Authority
- CN
- China
- Prior art keywords
- controlling system
- film battery
- copper
- temperature
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 230000008020 evaporation Effects 0.000 claims description 35
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 13
- 238000013459 approach Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 21
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 abstract 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 37
- 230000001276 controlling effect Effects 0.000 description 29
- 239000011669 selenium Substances 0.000 description 21
- 239000010949 copper Substances 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- 229910052711 selenium Inorganic materials 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000001816 cooling Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 2
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The utility model relates to a control system of a copper-indium-gallium-diselenide thin film battery, and in particular relates to a control system in a process for preparing the copper-indium-gallium-diselenide thin film battery by a coevaporation method. The system comprises a vacuum chamber, an evaporating source, a substrate, a heating module and a control system. The control system just comprises a temperature control system. According to the control system characterized by temperature change, the preparation process of the copper-indium-gallium-diselenide thin film battery is low in cost, and the quality of a CIGS (Copper Indium Gallium Diselenide) thin film prepared by the system is directly affected by the control system.
Description
Technical field
The utility model relates to a kind of copper indium gallium selenide film battery Controlling System, relates in particular to a kind of coevaporation method and prepares Controlling System in CIGS thin-film technique.
Background technology
Along with a large amount of exploitations and the consumption of the mankind to fossil energy (oil, coal, Sweet natural gas) etc., wretched insufficiency appears in earth resources, a large amount of CO
2Discharging causes and has reached criticality by global warming.Be to alleviate energy shortage and consequent environmental problem, research and develop new, reproducible substitute energy become current in the urgent need to.The spatter property of sun power and inexhaustible property characteristics make its important component part that becomes green novel energy source, especially photovoltaic cell, have land route and space and use double dominant, more become from now on important research direction in energy field.The advantages such as copper-indium-galliun-selenium (CIGS) compound film solar cell is high with its efficiency of conversion, permanent stability good, capability of resistance to radiation is strong become the advanced solar cell of global photovoltaic circle.
In CIGS thin film technology process, the accurate control of technical process is the key of restriction film quality, particularly will realize mass production, just must have stable, reliable Controlling System.But, in the process that laboratory result transforms to market, in the laboratory small area assembly of dispersing technology, manual preparation with produce in continuous processing, its technical requirements of big area assembly of automatically controlling differ greatly.In the coevaporation film preparation, realized the batch production of big area assembly by accurate control evaporation source vaporator rate abroad.But adopt vaporator rate Real-time Measuring control techniques, make the whole system cost improve, control complicated.Therefore, design studies is the coevaporation Controlling System cheaply, realizes the production of high quality big area assembly, is the major issue that the solar cell industry is paid close attention to always.
In the batch production of CIGS big area assembly, coevaporation prepares the CIGS thin-film technique to be realized by accurate control evaporation source vaporator rate, and atomic absorption method or fluorescent spectrometry are adopted in the control of vaporator rate usually.The facility investment of the evaporation source speed closed loop control system that this Controlling System is used is large, cost is high, and its tolerance range requires extremely strict, controls difficulty very large.Research, the domestic low-cost coevaporation Controlling System of design have boundless application prospect.Adopt atomic absorption method accurately to control the monitoring device that the evaporation source vaporator rate is used, be that Atomic Absorption Spectroscopy AAS mainly is comprised of characteristic spectrum light source, atomize system, photoelectric detector, four parts of electronic amplification system, its principle is: utilization can be sent the light source of characteristic spectrum, can absorb this characteristic spectrum after element atomize to be measured, by measuring the absorbed size of characteristic radiation, draw the content of tested element.Set the spectrograph correlation parameter according to the optimum element proportioning of process requirements, online each component content that detects in real time of spectrograph, i.e. element proportioning, and it is fed back to controller, controller is by adjusting each their vaporator rate of evaporation source temperature change, to the element proportioning that obtains envisioning.But the Atomic Absorption Spectroscopy AAS price is very high, causes facility investment to increase, and simultaneously, this closed loop control system is extremely strict to the requirement of tolerance range, and the system design cost is very high, and it is very large to control difficulty.
Technical process and control principle that the CIGS hull cell prepares under the three step coevaporation methods that adopt in thin-film technique are as follows:
The first step: substrate temperature is remained on a certain stationary value T1, Co-evaporated Deposition indium, gallium, selenium, the deposition certain hour generates (In
1-xGa
x)
2Se
3Initialization layer.
Second step: substrate temperature is upgraded to T2 from T1, then changes permanent power into and control substrate heating, make substrate temperature keep constant.Hydatogenesis copper and selenium are progressively with (In
1-xGa
x)
2Se
3Initialization layer reacts and forms CIGS.
After the reaction beginning, substrate upper film composition is gradually from (In
1-xGa
x)
2Se
3Become CIGS, the material thermal conductivity of these two kinds of components is all smaller, so substrate can be kept temperature constant state.When copper in film and selenium content reach the reaction formula aequum, if continue deposition, reaction terminating, film generates new Cu
xThe Se liquid phase.
In case Cu
xSe generates and begins surplus with regard to the content that shows copper.Because substrate temperature is that permanent power is controlled at T2, Cu
xSe is the low melting point conducting material, and its fusing point reaches (In lower than T2 mutually with CIGS
1-xGa
x)
2Se
3Compare, film surface becomes liquid phase by solid transformation, film thermal transmission coefficient generation great change, and film self not only needs to absorb a large amount of heat energy, and thin film of liquid phase outside thermal radiation is also larger, has just affected the thermal equilibrium that substrate has been set up, causes the substrate temperature fast-descending.Can judge the rich copper of film this moment, stops the second step evaporation.
The 3rd step: keep the base reservoir temperature of second step, then hydatogenesis indium, gallium, selenium certain hour, make the surface form slight rich indium layer.In order to eliminate the unnecessary Cu that produces in second step
xSe, the 3rd step deposited a certain amount of indium, gallium, selenium again, with Cu
xThe Se reaction generates CIGS, and forms the CIGS film of the rich indium of smooth surface.
The utility model content
The utility model purpose is a kind of copper indium gallium selenide film battery Controlling System, relates in particular to a kind of coevaporation method and prepares Controlling System in CIGS thin-film technique.The Controlling System that is controlling feature by temperature variation has realized that copper indium gallium selenide film battery preparation technology is low-cost, and directly affects by Controlling System the quality that system prepares the CIGS film.
The purpose of this utility model is achieved through the following technical solutions:
A kind of copper indium gallium selenide film battery Controlling System comprises vacuum chamber, evaporation source, substrate, heating module and Controlling System, it is characterized in that described Controlling System only comprises temperature controlling system.
Described Controlling System is the temperature controlling system by the funtcional relationship Collaborative Control vaporator rate of vaporator rate and temperature.By funtcional relationship, temperature and two controlled variable of vaporator rate are linked together, can learn vaporator rate from temperature, control thereby speed of the prior art, temperature double-control system are reduced to temperature of the present utility model.
The utility model is broken the present situation that realizes hull cell production in prior art by accurate control evaporation source vaporator rate, utilization temperature in whole CIGS film coevaporation process of growth is controlled the characteristics through whole control, only by the analysis and control of temperature controlling system to evaporation source and substrate temperature, and then realize effective control to film preparation.
Described temperature controlling system comprises infrared thermometer and online scanning type infrared temp. measurer.
The heating module below in first and second and three step zones of corresponding coevaporation " three-step approach " is provided with respectively an infrared thermometer and carries out on line real-time monitoring in described vacuum chamber.
Between second and three of corresponding coevaporation " three-step approach " step zones, the below of heating module is arranged on line sweep formula infrared thermometer in described vacuum chamber.The cooling point judges by the measurement of this online scanning type infrared temp. measurer.
Integral body, after substrate enters transfer system by CD feeding port, utilize heating module to heat in transmission process, carry out simultaneously the evaporation of copper-indium-galliun-selenium evaporation source, according to first evaporate gallium indium selenium, evaporate copper selenium again, the flow process of mend steaming at last indium gallium selenium carries out film growth, spread out of from piece mouth after evaporation is completed.The substrate surface temperature is taked non-contact measurement, is provided with respectively an infrared thermometer in first, second and third step and carries out on line real-time monitoring; The judgement of cooling point is measured with the online scanning type infrared temp. measurer between the 3rd step with being arranged on separately second step, detects the definite position of its cooling, and makes relevant control by upper computer.Whole system forms different combinations by the temperature section of continuous adjustment evaporation source and substrate, reaches at last the optimum control to film composition.
Described heating module adopts the thermal-radiating mode of well heater.
Described substrate surface temperature is taked non-contact measurement.
In the vacuum chamber of rectangular shape, be provided with gallium, indium, copper, selenium evaporation source by the evaporation sequence, the film vapor deposition process is take temperature as controlled variable, and its principle is: the first step evaporation gallium indium selenium is controlled at a certain stationary value T1 with substrate temperature, the deposition certain hour; Second step evaporation copper selenium is upgraded to T2 with substrate temperature from T1, then changes permanent power into and controls substrate heating, makes substrate temperature keep constant the deposition, when fast-descending appears in substrate temperature, stops the second step evaporation; The 3rd step mend to be steamed indium gallium selenium, kept the substrate temperature of second step, then hydatogenesis indium, gallium, selenium certain hour.In the process that thin film deposition is controlled, vaporator rate directly is subjected to the impact of evaporation source temperature, and when temperature raise, the vaporator rate of each element accelerated, and when temperature reduced, vaporator rate slowed down.The variation of film thickness is directly related with the vaporization temperature of each evaporation source of the first step, and namely the first step has determined the thickness of film in whole flow process; After the judgement of film composition can be occurred by second step cooling point, the evaporation time in the 3rd step judges, the ratio of copper, indium, gallium is controlled in certain scope; The crystal phase structure of film is also directly relevant with the temperature of substrate.Therefore, in thin film deposition system, the variation of temperature and film multifrequency nature dependency are very close, by the variation of each correlated source of accurate control and substrate temperature, just can reach the adjustment to film quality.
The utility model prepares CIGS thin-film equipment as background take " three-step approach " linear sources coevaporation, be the basis take thin film preparation process and control requirement, low cost control from film preparation, design is take this simple observing and controlling element of temperature as controlling elements, take film quality as controlling the coevaporation film preparation Controlling System of target.This system can realize the control of coevaporation film composition, band gap gradient distribution and thickness evenness etc. is reduced the cost of equipment key part and the difficulty of control, reaches the closed-loop control to deposit film composition on substrate.
Description of drawings
Fig. 1 is the structural representation of copper indium gallium selenide film battery Controlling System of the present utility model.
Embodiment
Below by embodiment, and by reference to the accompanying drawings, the technical solution of the utility model is described in further detail, but is not limited to the content of embodiment.
A kind of copper indium gallium selenide film battery Controlling System as Fig. 1, comprises vacuum chamber 12, evaporation source 6,7,8,9, substrate 1, heating module 2 and temperature controlling system.
Described temperature controlling system comprises infrared thermometer 4 and online scanning type infrared temp. measurer 5.
Be provided with respectively an infrared thermometer 4 in heating module 2 belows in first and second and three step zones of the interior corresponding coevaporation of described vacuum chamber 12 " three-step approach " and carry out on line real-time monitoring.
Between second and three step zones of the interior corresponding coevaporation of described vacuum chamber 12 " three-step approach ", the below of heating module 2 is arranged on line sweep formula infrared thermometer 5.The cooling point judges by the measurement of this online scanning type infrared temp. measurer 5.
Integral body, after substrate 1 enters transfer system by CD feeding port 10, utilize heating module 2 to heat in transmission process, carry out simultaneously evaporation source 6,7,8,9 evaporation, according to first evaporating evaporation source gallium 8, evaporation source indium 7, evaporation source selenium 9, evaporate evaporation source copper 6, evaporation source selenium 9, the evaporation source of benefit steaming at last indium 7, evaporation source gallium 8, evaporation source selenium 9 flow processs are carried out film growth, spread out of from piece mouth 11 after evaporation is completed again.Substrate 1 surface temperature is taked non-contact measurement, is provided with respectively an infrared thermometer 4 in first, second and third step and carries out on line real-time monitoring; The judgement of cooling point is measured with the online scanning type infrared temp. measurer 5 between the 3rd step with being arranged on separately second step, detects the definite position of its cooling, and makes relevant control by upper computer.Whole system by continuous adjustment evaporation source 6,7,8,9 and the temperature section of substrate 1 form different combinations, reach at last the optimum control to film composition.
Described heating module 2 adopts the thermal-radiating mode of well heater.
Claims (6)
1. a copper indium gallium selenide film battery Controlling System, comprise vacuum chamber, evaporation source, substrate, heating module and Controlling System, it is characterized in that described Controlling System only comprises temperature controlling system.
2. copper indium gallium selenide film battery Controlling System according to claim 1, is characterized in that described Controlling System is the temperature controlling system by the funtcional relationship Collaborative Control vaporator rate of vaporator rate and temperature.
3. copper indium gallium selenide film battery Controlling System according to claim 1, is characterized in that described temperature controlling system comprises infrared thermometer and online scanning type infrared temp. measurer.
4. copper indium gallium selenide film battery Controlling System according to claim 3 is characterized in that the heating module below in first and second and three step zones of in described vacuum chamber corresponding coevaporation " three-step approach " is provided with respectively an infrared thermometer.
5. copper indium gallium selenide film battery Controlling System according to claim 3, is characterized in that between second and three step zones of corresponding coevaporation " three-step approach " in described vacuum chamber, the below of heating module is arranged on line sweep formula infrared thermometer.
6. copper indium gallium selenide film battery Controlling System according to claim 1, is characterized in that described heating module adopts the thermal-radiating mode of well heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012207346755U CN203007382U (en) | 2012-12-27 | 2012-12-27 | Control system of copper-indium-gallium-diselenide thin film battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012207346755U CN203007382U (en) | 2012-12-27 | 2012-12-27 | Control system of copper-indium-gallium-diselenide thin film battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203007382U true CN203007382U (en) | 2013-06-19 |
Family
ID=48598994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012207346755U Expired - Lifetime CN203007382U (en) | 2012-12-27 | 2012-12-27 | Control system of copper-indium-gallium-diselenide thin film battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203007382U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514218A (en) * | 2015-12-30 | 2016-04-20 | 中国电子科技集团公司第十八研究所 | Method for on-line monitoring of preparation of copper indium gallium selenide absorption layer |
| CN106531826A (en) * | 2016-11-16 | 2017-03-22 | 深圳市金光能太阳能有限公司 | Method for preparing CIGS thin-film solar cell |
| CN107475681A (en) * | 2017-08-09 | 2017-12-15 | 米亚索乐装备集成（福建）有限公司 | Method for equal control large area flexible underlayer temperature |
| CN112525358A (en) * | 2020-12-30 | 2021-03-19 | 尚越光电科技股份有限公司 | Infrared temperature measuring device of CIGS co-evaporation method and temperature measuring control method thereof |
-
2012
- 2012-12-27 CN CN2012207346755U patent/CN203007382U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514218A (en) * | 2015-12-30 | 2016-04-20 | 中国电子科技集团公司第十八研究所 | Method for on-line monitoring of preparation of copper indium gallium selenide absorption layer |
| CN106531826A (en) * | 2016-11-16 | 2017-03-22 | 深圳市金光能太阳能有限公司 | Method for preparing CIGS thin-film solar cell |
| CN107475681A (en) * | 2017-08-09 | 2017-12-15 | 米亚索乐装备集成（福建）有限公司 | Method for equal control large area flexible underlayer temperature |
| CN112525358A (en) * | 2020-12-30 | 2021-03-19 | 尚越光电科技股份有限公司 | Infrared temperature measuring device of CIGS co-evaporation method and temperature measuring control method thereof |
| CN112525358B (en) * | 2020-12-30 | 2021-09-28 | 尚越光电科技股份有限公司 | Infrared temperature measuring device of CIGS co-evaporation method and temperature measuring control method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105720132B (en) | CIGS absorbed layer alkali-metal-doped method is prepared in a kind of flexible substrate | |
| Li et al. | Fabrication of Cu (In, Ga) Se2 thin films solar cell by selenization process with Se vapor | |
| CN105655235B (en) | A kind of method and apparatus that gradient band gap light absorbing layer is prepared based on continuous evaporation technique | |
| CN102492923A (en) | Method for roll-to-roll online controlled deposition of absorption layer on flexible substrate | |
| Lu et al. | HTL-free Sb2 (S, Se) 3 solar cells with an optimal detailed balance band gap | |
| CN203007382U (en) | Control system of copper-indium-gallium-diselenide thin film battery | |
| Nam et al. | Solar conversion efficiency and distribution of ZnS secondary phase in Cu2ZnSnS4 solar cells | |
| Hu et al. | Fabricating over 7%-efficient Sb2 (S, Se) 3 thin-film solar cells by vapor transport deposition using Sb2Se3 and Sb2S3 mixed powders as the evaporation source | |
| CN102354711B (en) | Solar battery assembly of copper-indium-gallium-selenium thin film and preparation method of light absorption layer thereof | |
| Wang et al. | Preparation of Sn loss-free Cu2SnS3 thin films by an oxide route for solar cell | |
| Ali et al. | Effect of air annealing on the band gap and optical properties of SnSb2S4 thin films for solar cell application | |
| CN101333645A (en) | Process for preparing copper-indium-selenium sputtering target | |
| CN102496565A (en) | Device for roll-to-roll deposited absorption layer on flexible substrate | |
| CN101805890A (en) | Method for in-situ growth of Cu2ZnSnS4 photovoltaic thin film | |
| Pan et al. | Controllable vapor transport deposition of efficient Sb2 (S, Se) 3 solar cells via adjusting evaporation source area | |
| CN102214737B (en) | Preparation method of compound thin film for solar battery | |
| Moon et al. | Ex-situ and in-situ analyses on reaction mechanism of CuInSe2 (CIS) formed by selenization of sputter deposited CuIn precursor with Se vapor | |
| CN105514218B (en) | Method for on-line monitoring of preparation of copper indium gallium selenide absorption layer | |
| Acciarri et al. | Hybrid sputtering/evaporation deposition of Cu (In, Ga) Se2 thin film solar cells | |
| CN101840941B (en) | Iron-doped carbon thin-film material with photovoltaic and photoconductive effects and preparation method thereof | |
| CN105633212B (en) | It is a kind of to be based on the method and apparatus that a step coevaporation technique prepares gradient band gap light absorbing zone | |
| CN103710668B (en) | The preparation method of CIGS thin-film | |
| CN101967624A (en) | Preparation method of Cu2ZnSnS4 photovoltaic film | |
| Qin et al. | Temperature sensitivity of adjustable band gaps of Sb2 (S, Se) 3 solar cells via vapor transport deposition | |
| CN105810764B (en) | A kind of preparation method of copper-indium-galliun-selenium film solar cell photoelectric absorption conversion layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING HANNENG CHUANGYU TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HANERGY TECHNOLOGY CO., LTD. Effective date: 20130913 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130913 Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: HORNET TECHNOLOGY LIMITED |
|
| ASS | Succession or assignment of patent right |
Owner name: HANERGY NEW ENERGY RESEARCH + DEVELOPMENT CENTER C Free format text: FORMER OWNER: BEIJING HANNENG CHUANGYU TECHNOLOGY CO., LTD. Effective date: 20150114 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 102209 CHANGPING, BEIJING TO: 100107 CHAOYANG, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150114 Address after: 100107 Beijing Chaoyang District Anli road 0 No. A Patentee after: Chinese new energy R & D Center Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: BEIJING HANNENG CHUANGYU TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: HANERGY NEW ENERGY RESEARCH + DEVELOPMENT CENTER CO., LTD. Effective date: 20150326 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100107 CHAOYANG, BEIJING TO: 102209 CHANGPING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150326 Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. Address before: 100107 Beijing Chaoyang District Anli road 0 No. A Patentee before: Chinese new energy R & D Center Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: BEIJING CHUANGYU TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: Beijing Chuangyu Technology Co.,Ltd. Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210204 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Patentee after: Zishi Energy Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130619 |