CN108411357A - A kind of doper and method improving zone-melted vapor doping stability - Google Patents
A kind of doper and method improving zone-melted vapor doping stability Download PDFInfo
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- CN108411357A CN108411357A CN201810331557.1A CN201810331557A CN108411357A CN 108411357 A CN108411357 A CN 108411357A CN 201810331557 A CN201810331557 A CN 201810331557A CN 108411357 A CN108411357 A CN 108411357A
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 247
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000012535 impurity Substances 0.000 claims abstract description 74
- 229910052786 argon Inorganic materials 0.000 claims abstract description 51
- 238000004857 zone melting Methods 0.000 claims abstract description 32
- 230000008569 process Effects 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 2
- 238000004364 calculation method Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphine group Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- -1 preheating Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 3
- 229910000085 borane Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical group [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000009377 nuclear transmutation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention provides a kind of dopers and method improving zone-melted vapor doping stability, it is designed by rational pipeline structure and tank is adulterated in setting in doping gas circuit, it realizes impurity gas and adulterates the uniform mixing of argon gas, pass through the control to adulterating gas uniformity, the control of the stability contorting and gas flow of high-precision pressure, it accurately can effectively control the relative scale into the doping throughput in zone melting furnace burner hearth, not only meet the processing technology requirement of 0.1 8000 ohm centimetres of different resistivity products, the theoretical calculation of existing gas doping technique and actual resistivity deviation can be reduced to 5% or so simultaneously.
Description
Technical field
The invention belongs to vapor doping zone-melted silicon single crystal production technical fields, and melting gas phase more particularly, to a kind of raising area mixes
The doper and method of miscellaneous stability.
Background technology
Neutron transmutation doping (NTD) technology is quite ripe so far since last century, the seventies used China,
It is widely used in the production that (FZ) monocrystalline is melted in area with the preferable advantage of resistivity evenness.With the height of China's electronics industry
Speed development, the demand to FZ single-chips increase rapidly, and the existing neutron irradiation ability in China far can not meet the life of FZ monocrystalline
The needs of production, at the bottleneck that FZ monocrystalline develops, and the neutron irradiation monocrystalline period is longer, and cost is higher, needs to use other
The non-middle method according to control resistivity makes up the deficiency of NTD abilities.
There are three types of remaining doped growing techniques of zone-melted silicon single crystal, i.e. solid dopant method, liquid phase doping methods and gas phase doping
Method.Wherein, zone melting single-crystal gas doping technique is that the air-flow containing dopant is blowed to melting zone, because it is simple flexibly, production week
Phase is short, lower-cost advantage becomes the important doping method of production zone-melted silicon single crystal.Currently, the domestic area for being relatively large in diameter
The doping method of silicon crystal mainly uses gas phase doping method, uses PH3It is single-crystal doped to make N-type, uses B2H6Gas prepares p-type list
Crystalline substance doping, gas phase doping method in crystal growth and doping set-up procedure with caused by vessel contacts both it is possible to prevente effectively from stain
Problem, and be not in the irradiation defect of NTD monocrystalline, has that lattice damage is small, minority carrier life time is high, with short production cycle and be produced into
The features such as this is low, is the best mode for obtaining high minority carrier life time low-resistance zone-melted silicon single crystal.
During existing growth doping process, mainly according to FZ silicon single crystal gas phase doping principles, in conjunction with single crystal diameter,
The conditions such as gas flow, gas concentration, doper carry out theoretical calculation and are combined with practical production experience, further given
Surely adulterate controlled quentity controlled variable, but its stably-doped property is poor, theoretical calculation and actual resistivity deviation 10% or so, caused by doping
Not precisely, it is easy to cause growth crystal resistivity and deviation occurs, there are certain quality point dangers.Therefore how to improve area and melt gas phase
Stably-doped property reduces theoretical calculation and actual resistivity deviation, is the technical barrier that production faces.
Invention content
In view of this, the present invention is directed to propose it is a kind of improve zone-melted vapor doping stability doper, in solution
State problem.
In order to achieve the above objectives, the technical proposal of the invention is realized in this way：
A kind of doper improving zone-melted vapor doping stability, the doper are connected to zone melting furnace, including are protected
Shield argon gas pipeline, doping argon gas pipeline, impurity gas pipeline, doping tank, doping gas enter boiler tube road and gas exhaust piping；The doping
The output end of argon gas pipeline and the impurity gas pipeline is connected to the air inlet of the doping tank, the outlet of the doping tank
Mouth is connected to the input terminal that the doping gas enters boiler tube road；The doping gas enters the output end on boiler tube road and the protection tunger tube
The output end on road is connect with the middle furnace chamber of zone melting furnace；The inlet end of the gas exhaust piping is connected to the zone melting furnace inner cavity；Institute
It states protection argon gas pipeline, the doping argon gas pipeline, the impurity gas pipeline, the doping gas and enters boiler tube road and gas exhaust piping
On be equipped with mass flowmenter；The doping tank is equipped with pressure controller.
Further, the impurity gas pipeline includes mutually independent first impurity gas pipeline and the second impurity gas
Pipeline；The output end of the first impurity gas pipeline and the second impurity gas pipeline is selected by impurity gas change-over switch
Selecting property is connected to the doping tank.
Further, the doping tank includes tank body and the evenly mixing device set on the tank inner chamber.
Further, the evenly mixing device includes multiple fins for being set to the tank inner chamber, multiple fins it
Between form gas flow channel staggeredly.
Further, the gas exhaust piping includes upper gas exhaust piping and lower gas exhaust piping；The air inlet of the upper gas exhaust piping
End is connected to the upper furnace chamber inner cavity of the zone melting furnace, the inlet end of the lower gas exhaust piping and the lower furnace chamber inner cavity of the zone melting furnace
Connection；It is equipped with pneumatic filter and mass flowmenter on the upper gas exhaust piping and the lower gas exhaust piping.
Further, the protection argon gas pipeline, the doping argon gas pipeline, the first impurity gas pipeline, described
It is equipped with pneumatic filter on second impurity gas pipeline, the upper gas exhaust piping and the lower gas exhaust piping.
A kind of side carrying out gas phase doping using the doper of the present invention for improving zone-melted vapor doping stability
Method, the expansion shoulder stage that monocrystalline is mixed in zone-melting process growth gas mix operation into promoting the circulation of qi, include the following steps：
(1) protection argon gas pipeline is opened, the mass flowmenter of adjustment protection tunger tube road, control protection argon gas is according to setting
Parameter is determined by protecting argon gas pipeline to enter in the burner hearth of zone melting furnace；
(2) gas exhaust piping is opened, adjusts the mass flowmenter on gas exhaust piping, it is ensured that the furnace pressure of zone melting furnace is being set
It is worth in range；
(3) suitable impurity gas is selected according to actual conditions；
(4) impurity gas pipeline and doping argon gas pipeline are opened, impurity gas pipeline is adjusted and adulterates tunger tube road
To setting value, the doped gas piping of impurity gas enters in doping tank mass flowmenter, adulterates the doped argon gas pipeline of argon gas
Into in doping tank, adulterates argon gas and impurity gas and uniformly mixed in doping tank；
(5) it opens doping gas and enters boiler tube road, adjustment doping gas enters the mass flowmenter of boiler tube road to setting value, adulterates pipe
Interior uniformly mixed doping argon gas and the doped gas of impurity gas enter during boiler tube road enters in furnace chamber, the pressure on adjustment doping tank
Controller ensures that doping pressure inside the tank is more than the furnace pressure of zone melting furnace.
Compared with the existing technology, the doper of the present invention for improving zone-melted vapor doping stability has following excellent
Gesture：
(1) doper of the present invention for improving zone-melted vapor doping stability, is set by rational pipeline structure
Meter and the setting doping tank in doping gas circuit, realize impurity gas and adulterate the uniform mixing of argon gas, solve doping gas mixing
The problem of stably-doped property difference caused by uneven, realizes and improves gas phase doping stability, reduces theoretical calculation and practical electricity
The purpose of resistance rate deviation；
(2) doping tank of the present invention provides the chamber of mixing, doping tank inner cavity for impurity gas and doping argon gas
Multiple fins are provided with, form gas channel staggeredly between multiple fins, impurity gas is further increased and doping argon gas is mixed
The uniformity of conjunction, and then ensure to enter the mixing uniformity of the doping gas in zone melting furnace, improve the stability of gas phase doping.
(3) doper of the present invention for improving zone-melted vapor doping stability passes through the control to adulterating gas uniformity
The control of system, the stability contorting of high-precision pressure and gas flow, accurately can effectively control into zone melting furnace burner hearth
The relative scale of throughput is adulterated, the processing technology for not only meeting 0.1-8000 ohm centimetres of different resistivity products is wanted
It asks, while the theoretical calculation of existing gas doping technique and actual resistivity deviation can be reduced to 5% or so.
The side that gas phase doping is carried out using the doper of the present invention for improving zone-melted vapor doping stability
The doper of method and above-mentioned raising zone-melted vapor doping stability compared with the existing technology have the advantage that it is identical, again not
It is repeating.
Description of the drawings
The attached drawing for constituting the part of the present invention is used to provide further understanding of the present invention, schematic reality of the invention
Example and its explanation are applied for explaining the present invention, is not constituted improper limitations of the present invention.In the accompanying drawings：
Fig. 1 is that the doper of the raising zone-melted vapor doping stability described in the embodiment of the present invention dismisses schematic diagram；
Fig. 2 is the structural schematic diagram of the doping tank described in the embodiment of the present invention.
Reference sign：
1- zone melting furnaces；2- protects argon gas pipeline；3- adulterates argon gas pipeline；4- impurity gas pipelines；5- adulterates tank；6- is adulterated
Gas enters boiler tube road；7- gas exhaust pipings；8- mass flowmenters；9- pressure controllers；10- the first impurity gas pipelines；11- second mixes
Miscellaneous gas piping；12- impurity gas change-over switches；13- tank bodies；14- fins；The upper gas exhaust pipings of 15-；Gas exhaust piping under 16-；
The upper furnace chambers of 17-；Furnace chamber under 18-；19- pneumatic filters；Furnace chamber in 20-.
Specific implementation mode
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or more；The present invention's
In description, it should be noted that unless otherwise clearly defined and limited, term " setting ", " connected ", " connection " should do broad sense
Understand, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be directly connected, also may be used
Indirectly connected through an intermediary, can be the connection inside two elements.For the ordinary skill in the art,
The concrete meaning of above-mentioned term in the present invention can be understood by concrete condition.
The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
As illustrated in fig. 1 and 2, a kind of doper improving zone-melted vapor doping stability, doper connect with zone melting furnace 1
Logical, zone melting furnace 1 includes upper furnace chamber 17, middle furnace chamber 20 and lower furnace chamber 18, and melting zone is located in middle furnace chamber 20；
Doper includes protection argon gas pipeline 2, doping argon gas pipeline 3, impurity gas pipeline 4, doping tank 5, doping gas
Enter boiler tube road 6 and gas exhaust piping 7；
The input terminal of protection argon gas pipeline 2 is connect with main argon gas air source, and output end is connected to 20 inner cavity of middle furnace chamber, protects argon
On air pipe 2 pneumatic filter 19 and mass flowmenter 8 are equipped with to output extreme direction by input terminal；During doping, protect
Shield argon gas is interior to ensure 1 furnace pressure of zone melting furnace not by furnace chamber 20 in protecting argon gas pipeline 2 to enter according to setup parameter always
Less than setting value；
The input terminal of doping argon gas pipeline 3 is connect with argon gas air source, and output end is connect with the air inlet of doping tank 5, is adulterated
On argon gas pipeline 3 pneumatic filter 19 and mass flowmenter 8, this mass flowmenter 8 are equipped with to output extreme direction by input terminal
Range ability be 0.5L~5L/min；
Impurity gas pipeline 4 includes mutually independent first impurity gas pipeline 10 and the second impurity gas pipeline 11, the
The input terminal of one impurity gas pipe 10 is connect with the first impurity gas air source, the input terminal and second of the second impurity gas pipeline 11
Impurity gas air source connects, and the output end of the output end of the first impurity gas pipeline 10 and the second impurity gas pipeline 11 is by mixing
12 selectivity of miscellaneous gas change-over switch is connected to doping tank 5, i.e. the switching of impurity gas change-over switch 12 can realize first
The connection of impurity gas pipeline 10 or the second impurity gas pipeline 11 and doping tank 5；It first impurity gas pipeline 10 and second mixes
Pneumatic filter 19 and mass flowmenter 8, this quality are equipped on direction on miscellaneous gas piping 11 by input terminal to output end
The range ability of flowmeter is 1~500ml/min；
The input terminal that the gas outlet of doping tank 5 enters boiler tube road 6 with doping gas is connect；It adulterates tank 5 and is equipped with pressure controller
9, pressure controller 9 can set pressure limit as 1~10bar, and the pressure that 5 inner cavity of doping tank is controlled by pressure controller 9 is big
In 1 furnace pressure of zone melting furnace；It includes tank body 13 and the evenly mixing device set on 13 inner cavity of tank body to adulterate tank 5, and evenly mixing device includes more
A fin 14 for being set to 13 inner cavity of tank body forms gas flow channel staggeredly between multiple fins 14, can will enter and mix
The doping argon gas and impurity gas of 5 inner cavity of miscellaneous tank are uniformly mixed into the doping gas that can enter in zone melting furnace 1, and multiple fins 14 exist
Adulterate tank 5 inner cavity distribution mode can there are many, it is shown in Fig. 2 be it is therein several, such as each fin 14 is in vertical direction
Upper equidistant parallel arrangement or in the horizontal equidistant parallel are arranged or are connected with each other serpentine-like arrangement or in multiple Z-shapeds arrangement etc.；
The input terminal that doping gas enters boiler tube road 6 is connect with the gas outlet of doping tank 5, and doping gas enters the output end on boiler tube road 6
It is connect with 20 inner cavity of middle furnace chamber, the doped gas of doping gas for adulterating mixing in tank 5 enters furnace chamber 20 during boiler tube road 6 enters, and realizes single
Brilliant gas phase doping, doping gas enters is equipped with mass flowmenter 8, this quality stream by input terminal on boiler tube road 6 to output extreme direction
The range ability of gauge 8 is 1~500ml/min；
Gas exhaust piping 7 includes upper gas exhaust piping 15 and lower gas exhaust piping 16, inlet end and the zone melting furnace 1 of upper gas exhaust piping 15
The connection of 17 inner cavity of upper furnace chamber, the inlet end of lower gas exhaust piping 16 is connected to 18 inner cavity of lower furnace chamber of zone melting furnace 1；Upper gas exhaust piping
15 and direction of the lower gas exhaust piping 16 by inlet end to outlet side on be equipped with pneumatic filter 19 and mass flowmenter 8.
The method that gas phase doping is carried out using the doper of the present invention for improving zone-melted vapor doping stability：
Embodiment 1
The molten gas in 1000-3000 ohm of centimetres of areas of gas phase doping growth N-type resistivity mixes monocrystalline：
The first impurity gas pipeline is selected to be connect with doping tank by impurity gas change-over switch first, the first impurity gas
Impurity gas in pipeline is phosphine gas, a concentration of 70ppm of phosphine gas；
By the parameter setting of the mass flowmenter on the first impurity gas pipeline it is 20- based on theoretical calculation and statistical data
25ml/min；The parameter setting for adulterating the mass flowmenter of tunger tube road is 2-3L/min；Doping gas enters the matter of boiler tube road
The parameter setting for measuring flowmeter is 5-15ml/min；The parameter setting of pressure controller is 4-6bar；
The above flow value, pressure value are set on zone melting furnace panel, using zone-melted silicon single crystal growth technique flow, dress
Material, centering, vacuumize, rush argon gas, preheating, material, seeding, open impurity gas, expand shoulder, it is isometrical, ending, cooling, test etc.
Step, it is N-type that can obtain conduction type, and electrical resistivity range melts gas in 1000-3000 ohm of centimetres of areas mixes monocrystalline.
Embodiment 2
The molten gas in 60-90 ohm of centimetres of areas of gas phase doping growth N-type resistivity mixes monocrystalline：
The first impurity gas pipeline is selected to be connect with doping tank by impurity gas change-over switch first, the first impurity gas
Impurity gas in pipeline is phosphine gas, a concentration of 200ppm of phosphine gas；
By the parameter setting of the mass flowmenter on the first impurity gas pipeline it is 60- based on theoretical calculation and statistical data
65ml/min；The parameter setting for adulterating the mass flowmenter of tunger tube road is 2-3L/min；Doping gas enters the matter of boiler tube road
The parameter setting for measuring flowmeter is 20-40ml/min；The parameter setting of pressure controller is 4-6bar；
The above flow value, pressure value are set on zone melting furnace panel, using zone-melted silicon single crystal growth technique flow, dress
Material, centering, vacuumize, rush argon gas, preheating, material, seeding, open impurity gas, expand shoulder, it is isometrical, ending, cooling, test etc.
Step, it is N-type that can obtain conduction type, and electrical resistivity range melts gas in 60-90 ohm of centimetres of areas mixes monocrystalline.
Embodiment 3
The molten gas in 4000-8000 ohm of centimetres of areas of gas phase doping growing P-type resistivity mixes monocrystalline：
The second impurity gas pipeline is selected to be connect with doping tank by impurity gas change-over switch first, the second impurity gas
Impurity gas in pipeline is borane gases, a concentration of 200ppm of borane gases；
By the parameter setting of the mass flowmenter on the first impurity gas pipeline it is 60- based on theoretical calculation and statistical data
65ml/min；The parameter setting for adulterating the mass flowmenter of tunger tube road is 2-3L/min；Doping gas enters the matter of boiler tube road
The parameter setting for measuring flowmeter is 25-35ml/min；The parameter setting of pressure controller is 4-6bar；
The above flow value, pressure value are set on zone melting furnace panel, using zone-melted silicon single crystal growth technique flow, dress
Material, centering, vacuumize, rush argon gas, preheating, material, seeding, open impurity gas, expand shoulder, it is isometrical, ending, cooling, test etc.
Step, it is p-type that can obtain conduction type, and electrical resistivity range melts gas in 4000-8000 ohm of centimetres of areas mixes monocrystalline.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention god.
Claims (7)
1. a kind of doper improving zone-melted vapor doping stability, the doper are connected to zone melting furnace (1), feature
It is：Enter stove including protection argon gas pipeline (2), doping argon gas pipeline (3), impurity gas pipeline (4), doping tank (5), doping gas
Pipeline (6) and gas exhaust piping (7)；It is described doping argon gas pipeline (3) and the impurity gas pipeline (4) output end with it is described
The air inlet connection of tank (5) is adulterated, the input terminal that the gas outlet of the doping tank (5) enters boiler tube road (6) with the doping gas connects
It is logical；It is described doping gas enter boiler tube (6) output end and it is described protection argon gas pipeline (2) output end in zone melting furnace (1)
Furnace chamber (20) connects；The inlet end of the gas exhaust piping (7) is connected to the zone melting furnace (1) inner cavity；The protection argon gas pipeline
(2), the doping argon gas pipeline (3), the impurity gas pipeline (4), the doping gas enter boiler tube road (6) and gas exhaust piping
(7) mass flowmenter (8) is equipped on；The doping tank (5) is equipped with pressure controller (9).
2. a kind of doper improving zone-melted vapor doping stability according to claim 1, it is characterised in that：It is described
Impurity gas pipeline (4) includes mutually independent first impurity gas pipeline (10) and the second impurity gas pipeline (11)；It is described
First impurity gas pipeline (10) and the output end of the second impurity gas pipeline (11) pass through impurity gas change-over switch
(12) selective to be connected to the doping tank (5).
3. a kind of doper improving zone-melted vapor doping stability according to claim 1, it is characterised in that：It is described
Doping tank (5) includes tank body (13) and the evenly mixing device set on the tank body (13) inner cavity.
4. a kind of doper improving zone-melted vapor doping stability according to claim 3, it is characterised in that：It is described
Evenly mixing device includes multiple fins (14) for being set to the tank body (13) inner cavity, is formed and is interlocked between multiple fins (14)
Gas flow channel.
5. according to a kind of doper improving zone-melted vapor doping stability of claim 1 to 4 any one of them, feature
It is：The gas exhaust piping (7) includes upper gas exhaust piping (15) and lower gas exhaust piping (16)；The upper gas exhaust piping (15) into
Gas end is connected to upper furnace chamber (17) inner cavity of the zone melting furnace (1), and the inlet end of the lower gas exhaust piping (16) and the area are molten
Lower furnace chamber (18) inner cavity of stove (1) is connected to；It is equipped with gas on the upper gas exhaust piping (15) and the lower gas exhaust piping (16)
Filter (19) and mass flowmenter (8).
6. a kind of doper improving zone-melted vapor doping stability according to claim 5, it is characterised in that：It is described
Protect argon gas pipeline (2), the doping argon gas pipeline (3), the first impurity gas pipeline (10), second impurity gas
It is equipped with pneumatic filter (19) on pipeline (11), the upper gas exhaust piping (15) and the lower gas exhaust piping (16).
7. a kind of side carrying out gas phase doping using the doper described in claim 1 for improving zone-melted vapor doping stability
Method, it is characterised in that：The expansion shoulder stage that monocrystalline is mixed in zone-melting process growth gas mixes operation into promoting the circulation of qi, includes the following steps：
(1) protection argon gas pipeline, the mass flowmenter of adjustment protection tunger tube road are opened, control protection argon gas is joined according to setting
Number is by protecting argon gas pipeline to enter in the burner hearth of zone melting furnace；
(2) gas exhaust piping is opened, adjusts the mass flowmenter on gas exhaust piping, it is ensured that the furnace pressure of zone melting furnace is in setting value model
In enclosing；
(3) suitable impurity gas is selected according to actual conditions；
(4) impurity gas pipeline and doping argon gas pipeline are opened, impurity gas pipeline is adjusted and adulterates the quality of tunger tube road
To setting value, the doped gas piping of impurity gas enters in doping tank flowmeter, and the doped argon gas pipeline of doping argon gas enters
It adulterates in tank, adulterates argon gas and impurity gas and uniformly mixed in doping tank；
(5) it opens doping gas and enters boiler tube road, adjustment doping gas enters the mass flowmenter of boiler tube road to setting value, adulterates mixed in pipe
It closes uniform doping argon gas and the doped gas of impurity gas enters during boiler tube road enters in furnace chamber, the pressure control on adjustment doping tank
Device ensures that doping pressure inside the tank is more than the furnace pressure of zone melting furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810331557.1A CN108411357A (en) | 2018-04-13 | 2018-04-13 | A kind of doper and method improving zone-melted vapor doping stability |
Applications Claiming Priority (1)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110872726A (en) * | 2018-09-03 | 2020-03-10 | 胜高股份有限公司 | Method and apparatus for producing single crystal, and single crystal silicon ingot |
| CN114775063A (en) * | 2022-01-19 | 2022-07-22 | 中环领先半导体材料有限公司 | Process for improving single crystal RRV and resistivity |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455029A (en) * | 2003-04-03 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method |
| CN1865530A (en) * | 2006-04-26 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing zone-melted vapor doping solar cell silicon single crystal |
| CN1865531A (en) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing vapor doping zone-melted silicon single crystal |
| CN1865529A (en) * | 2006-04-26 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal |
| CN101979719A (en) * | 2010-11-03 | 2011-02-23 | 天津市环欧半导体材料技术有限公司 | Method for producing gas phase heavy phosphorus-doped float zone silicon single crystal |
| CN102061514A (en) * | 2010-11-03 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| CN102534752A (en) * | 2012-03-08 | 2012-07-04 | 天津市环欧半导体材料技术有限公司 | Czochralski zone melting gas doping method for preparing zone-melted silicon single crystal |
| CN203741451U (en) * | 2014-01-27 | 2014-07-30 | 浙江晶盛机电股份有限公司 | Gas control system for zone melting furnace |
| CN104328484A (en) * | 2014-11-17 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | Novel doping gas path for zone-melting gas-doped single crystal |
-
2018
- 2018-04-13 CN CN201810331557.1A patent/CN108411357A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455029A (en) * | 2003-04-03 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method |
| CN1865531A (en) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing vapor doping zone-melted silicon single crystal |
| CN1865530A (en) * | 2006-04-26 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing zone-melted vapor doping solar cell silicon single crystal |
| CN1865529A (en) * | 2006-04-26 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal |
| CN101979719A (en) * | 2010-11-03 | 2011-02-23 | 天津市环欧半导体材料技术有限公司 | Method for producing gas phase heavy phosphorus-doped float zone silicon single crystal |
| CN102061514A (en) * | 2010-11-03 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| CN102534752A (en) * | 2012-03-08 | 2012-07-04 | 天津市环欧半导体材料技术有限公司 | Czochralski zone melting gas doping method for preparing zone-melted silicon single crystal |
| CN203741451U (en) * | 2014-01-27 | 2014-07-30 | 浙江晶盛机电股份有限公司 | Gas control system for zone melting furnace |
| CN104328484A (en) * | 2014-11-17 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | Novel doping gas path for zone-melting gas-doped single crystal |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110872726A (en) * | 2018-09-03 | 2020-03-10 | 胜高股份有限公司 | Method and apparatus for producing single crystal, and single crystal silicon ingot |
| CN110872726B (en) * | 2018-09-03 | 2021-08-27 | 胜高股份有限公司 | Method and apparatus for producing single crystal, and single crystal silicon ingot |
| CN114775063A (en) * | 2022-01-19 | 2022-07-22 | 中环领先半导体材料有限公司 | Process for improving single crystal RRV and resistivity |
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