CN1865531A - Process for preparing vapor doping zone-melted silicon single crystal - Google Patents
Process for preparing vapor doping zone-melted silicon single crystal Download PDFInfo
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- CN1865531A CN1865531A CN 200610013497 CN200610013497A CN1865531A CN 1865531 A CN1865531 A CN 1865531A CN 200610013497 CN200610013497 CN 200610013497 CN 200610013497 A CN200610013497 A CN 200610013497A CN 1865531 A CN1865531 A CN 1865531A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010703 silicon Substances 0.000 title claims abstract description 62
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 101
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 58
- 230000033001 locomotion Effects 0.000 claims abstract description 46
- 229910052786 argon Inorganic materials 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims description 18
- 238000012423 maintenance Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 9
- 229910000085 borane Inorganic materials 0.000 claims description 8
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000004857 zone melting Methods 0.000 abstract description 5
- 238000002156 mixing Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Abstract
The invention discloses a manufacturing method of gas-phase pre-blending zone melting process monocrystalline silicon, which comprises the following steps: shoving; exhausting; filling argon gas; doping; mitering; utilizing zone melting process monocrystalline silicon furnace electric control system to do the following operation in the metering growing procedure: setting positive, inversed movement for touching screen and coil heating moving order; moving positively for 1-90 s and moving inversely; repeating the movement to coincidence with the coil center and lower shaft or eccentric 1-50 mm. The invention reduces the radial and axial resistance heterogeneous problem of silicon single-crystal to improve the stability and reliability, which satisfies different needs of zone melting process monocrystalline silicon.
Description
Technical field
The present invention relates to a kind of production method of silicon single-crystal, particularly a kind of production method of vapor doping zone-melted silicon single crystal.
Technical background
The silicon single-crystal that adopts vertical pulling method or zone melting method to produce causes resistivity thermolability and reversibility easily because oxygen level is high at present, causes the limitation of czochralski silicon monocrystal in the power device manufacturing processed thus.The silicon single-crystal that zone melting method is produced, though can reduce the content of oxygen, it can only adopt the mode of neutron irradiation that monocrystalline is mixed, like this production cycle long, production cost height, and be subjected to the restriction of neutron irradiation shortage of resources.
The present invention be 02159135.0 in the patent No., title be similarly " production method of vapor doping zone-melted silicon single crystal " patent (with the present invention be same applicant) the basis on replenish and improve.Through technician's test of many times, especially in the inflation of finding time, doping and isodiametric growth technology, can the size of the size of its use furnace pressure, the concentration of mixed gas and isometrical maintenance diameter, pulling rate, rotating speed all be successfully realize the key issue of gas phase doping silicon single-crystal.Also still exist silicon single-crystal simultaneously and radially reach the too high problem of axial resistivity ununiformity.Also need development for implementing the matching used zone-melted silicon single crystal stove of this production method control section if address this problem.
Summary of the invention
Problem in view of above-mentioned technology existence, the objective of the invention is to: radially reach axial resistivity non-uniformity problem for what reduce vapor doping zone-melted silicon single crystal, improve silicon single-crystal quality of stability and reliability, the spy provides a kind of production method of vapor doping zone-melted silicon single crystal.Provide a kind of electric control system of zone-melted silicon single crystal furnace again for implementing this method simultaneously.
Zone-melted silicon single crystal through present method is produced has reduced the axial resistivity non-uniformity problem of radially reaching of silicon single-crystal, has improved the stability and the reliability of silicon single-crystal.Thereby satisfied the demand of user to vapor doping zone-melted silicon single crystal.
The technical scheme that the present invention takes is: a kind of production method of vapor doping zone-melted silicon single crystal, comprise the inflation of finding time, doping and isodiametric growth technology, it is characterized in that: in described isodiametric growth technology, utilize electric control system of zone-melted silicon single crystal furnace to carry out following operation: when press touch-screen give fix the instruction that rotating motor forward, reversing motion and heater coil move after, following rotating motor drives monocrystalline and carries out the Direct/Reverse motion according to the time of setting; Forward rotation becomes backward rotation again again after 1～90 second, and so forth motion; After heater coil moves, the center of heater coil is overlapped with the center of lower shaft or depart from 1-50mm.
The employed zone-melted silicon single crystal electric control system of this method of described enforcement comprises center control section, electric machine control part, control panel and impurity gas control section; Described center control section comprises the programmable logic controller that contains communication module and link to each other with input/output module, analog quantity input/output module; Described motor controling part branch comprises digital motion controller, interconnecting modules, manual governing encoder, servo-driver and servomotor; Described impurity gas control section comprises the argon gas that gas shield partly uses, the mass-flow gas meter and the doping case part of nitrogen; Described control panel is the touch-screen type control panel, and wherein, touch screen control panel is connected with the communication module of programmable logic controller; Programmable logic controller is connected with digital motion controller by serial ports; The input/output module of programmable logic controller partly is connected with argon gas, the mass-flow gas meter of nitrogen, the doping case of two interconnecting modules and described doping control section respectively by relief relay; Described manual governing encoder is connected with the X-E axle socket of digital motion controller; Two interconnecting modules are connected with E-H axle socket with the X-W axle of digital motion controller respectively, described servomotor comprise rotating motor, down rotating motor, go up speed motor, speed motor and coil mobile motor and connect servo-driver respectively down, and change, change down, go up speed, following speed and coil socket by servo-driver and going up of two interconnecting modules and be connected.
For implementing this production method, played very crucial effect as the touch-screen of operating control section.Its inside function is powerful, can show a plurality of controls interface under same screen, according to the operated action of program complete operation person that designs in advance.The touch-screen of zone-melted silicon single crystal stove is divided into 4 interfaces: 1, key frame.Comprise: Su control and display part up and down; The conversion switch and the demonstration of voltage, electric current, power; Switch that coil moves and display part; Hydraulic-pressure sleeve moves up and down switch; The switch of timer and demonstration or the like; 2, be provided with.Comprise: Su quick travel up and down; The time of timer is provided with; And the quick travel of coil or the like.3, gas vacuum.Comprise: the demonstration of vacuum pump switch and vacuum tightness; Argon gas is fast and at a slow speed gas-filled switching tube and the argon gas setting and the demonstration of flow of aerating air at a slow speed: switch of vent valve or the like up and down.4, gas doping: the doping airshed is set; Argon flow amount is set; Go into the stove flow set; Doping gas system pressure sets and the unlatching of each magnetic valve, close.And touch-screen can be used with programmable logic controller, thus saved greatly because needed rly. and winding displacement when self-locking or interlocking, and saved very big space.
Programmable logic controller has played the effect of forming a connecting link as the center control section of this equipment.When the operator sends given signal and is transferred in the programmable logic controller on touch-screen, programmable logic controller is transferred to the function unit execution by relief relay with control signal again according to its outside relief relay of the time variable control of having finished.And can be according to the different input of selecting for use, output module is accepted the signal of different types of signal source, and can be by changing the ratio that its internal processes changes input and output.The programmable logic controller biggest advantage is and can be used with multiple components and parts, for example touch-screen, digital motion controller etc.
The electric machine control part mainly is the control method that has adopted manual governing encoder, digital motion controller, motor servo driver and servomotor to combine with programmable logic controller.Its center control section is exactly a digital motion controller, it is one of now more advanced in the world independent control, it has strong functions, can control a plurality of various control such as stroke, speed, acceleration, retarded velocity, time-delay by program simultaneously.For example: in growth vapor doping zone-melted silicon single crystal process,, can finish by changing its internal processes to aspects such as following control aspect, coil of becoming a full member the counter-rotating change move.Add with motor servo driver and servomotor and be used, make its accuracy and stability also obtain guarantee.
Doping case part mainly is custom-designed in order to grow the gas phase doping monocrystalline, its inside comprises mass-flow gas meter, gas pressure regulator and magnetic valve, it mainly acts on exactly impurity gas is mixed mutually with argon gas, open corresponding solenoid valve for given signal of programmable logic controller by the operator by touch-screen in due course, after by pressure controller unnecessary gas being discharged again, the impurity gas of required flow is entered furnace chamber, growth gas phase doping monocrystalline.Its control mainly is after setting the flow of each mass-flow gas meter by touch-screen, control signal with each mass-flow gas meter, in programmable logic controller, be converted to the input signal of mass flowmeter by the address that configures in advance with programmable logic controller, input to mass flowmeter, the size of pilot-gas flow.Feed back to programmable logic controller by mass flowmeter again,, be input to the digital display portion of touch-screen, show its flow through after the processing of its inside.Make it in control, reach accurate to vapor doping zone-melted silicon single crystal resistivity.
Description of drawings
Fig. 1 is the mixing gas circuit synoptic diagram of doping process of the present invention and as Figure of abstract.
Fig. 2 is the electric control system of zone-melted silicon single crystal furnace functional block diagram.
Fig. 3 is the inner functional block diagram of doping case among Fig. 2.
Embodiment
With reference to Fig. 1,2,3, in the described gas filling technology of finding time, furnace pressure uses relative pressure to be 0.2bar-6bar; In described isodiametric growth technology, the diameter of isometrical maintenance is 20mm-220mm; The pulling rate of isometrical maintenance is 1mm/min-5mm/min, and the lower shaft rotating speed of isometrical maintenance is 1rpm-30rpm.In described doping process, the impurity gas of use is phosphine (PH
3), borine (B
2H
6), phosphine (PH
3) with mixed gas, the borine (B of argon gas (Ar)
2H
6) with four kinds of impurity gass of mixed gas of argon gas (Ar) in any one; In four kinds of impurity gass, phosphine (PH
3) or borine (B
2H
6) shared concentration ratio is 0.0001%-100%.
In the technology of finding time, the use of furnace pressure is the size decision according to the silicon single-crystal diameter.Example: 3 " monocrystalline uses 0.5bar (relative pressure), and 4 " monocrystalline use 1bar (relative pressure).
The impurity gas that uses in doping process comprises four kinds: 1. phosphine (PH
3) its concentration is 100%, 2. borine (B
2H
6) its concentration is 100%, 3. phosphine (PH
3) with the 0.0001%-100% of the relative argon gas of its concentration of mixed gas (Ar) of argon gas (Ar), 4. borine (B
2H
6) with the 0.0001%-100% of the relative argon gas of its concentration of mixed gas (Ar) of argon gas (Ar).The mixed gas of preparation different concns is the needs according to single crystal silicon resistivity, when single crystal silicon resistivity is low, can prepare the mixed gas of higher concentration; When monocrystalline resistivity is higher, can prepare the mixed gas of low concentration, for example when monocrystalline resistivity is N type 50 Ω cm, required phosphine (PH
3) concentration be about 0.01%-0.1% (relatively argon gas).
In isodiametric growth technology, isometrical maintenance diameter is according to the diameter decision of required silicon single-crystal.Example: 3 " the isometrical maintenance diameter of silicon single-crystal is 80mm, 4, and " the isometrical maintenance diameter of silicon single-crystal is 105mm.The pulling rate of isometrical maintenance and lower shaft rotating speed equally also are to determine according to the size of required silicon single-crystal diameter.Example: 3 " pulling rate of isometrical maintenance is 3mm/min, and the lower shaft rotating speed is 6rpm, 4, and " pulling rate of the isometrical maintenance of silicon single-crystal is 2.8mm/min, and the lower shaft rotating speed is 5rpm.
In isometrical production technique, use lower shaft forward, backward rotation, the setting of run duration is at the rotating speed of the lower shaft of isometrical maintenance and definite according to the different diameter silicon single-crystal and so forth.If silicon single-crystal is big at the lower shaft rotating speed of isometrical maintenance, the reciprocating time of its setting is just little, and on the contrary, if silicon single-crystal is little at the lower shaft rotating speed of isometrical maintenance, the reciprocating time of its setting is just big.Example: if silicon single-crystal is 6rpm at the lower shaft rotating speed of isometrical maintenance, the reciprocating time of its setting should be about 25 seconds; The center of heater coil is with respect to the coincidence at lower shaft center or depart from certain distance, is to determine according to the diameter of silicon single-crystal is different for example 3 " center of its heater coil of monocrystalline and the center of lower shaft overlap or allow 10mm apart from depart from.
Described doping case partly comprises argon gas, the gas that mixes, go into mass-flow gas meter, pressure controller and magnetic valve that stove uses; Wherein magnetic valve is connected with the input/output module of programmable logic controller by relief relay respectively; Argon gas, the gas that mixes, go into mass-flow gas meter, the pressure controller that stove uses and be connected with the input/output module of programmable logic controller.
What described touch-screen type control panel adopted is the MT510T10.4TFT color touch screen of eView.
Described programmable logic controller is the C200HG type programmable logic controller that Omron Corp produces, its input, output point are ID216 type load module and the OD219 type output module that Omron Corp produces, and the analog quantity load module of employing and analog output module are AD003 type analog quantity load module and the DA003 type analog output module that Omron Corp produces.
The DMC2280 type digital motion controller that described digital motion controller is produced for GALIL company, motor servo driver is that a day intrinsic safety river company produces SGDM08ADA type motor servo driver, commentaries on classics is gone up in its control, the following servomotor that changes, goes up speed, following fast four axles is the SGMAH-08AAA41 type AC servo motor that day intrinsic safety river company produces, and the servomotor that control coil moves is day SGMAH-08A1A41 type AC servo motor of intrinsic safety river company production.
The mass-flow gas meter that the nitrogen of described gas shield part, argon gas use is 5850 types, the 5851 type mass-flow gas meters that BROOKS company produces; Doping gas, the argon gas of doping case part and go into mass-flow gas meter and the pressure controller thereof that stove uses and be 5850 type mass-flow gas meters and the 5866 type pressure controllers that BROOKS company produces.
The electric control system of zone-melted silicon single crystal furnace flow process is divided into the two parts:
Center control section flow process is: the operator sends instruction by touch-screen, arrives communication module through data line, again through sending to programmable logic controller after the change of communication module to signal.Again by programmable logic controller according to the prior program that edits, portion carries out dividing after the computing three tunnel outputs within it.The first via: the control signal as motor is input to digital motion controller, and the motion of motor is controlled.The second the tunnel:, finish the control of the whole rly. part of zone-melted silicon single crystal stove by output point control relief relay according to the input signal of each input point.Third Road:, the set(ting)value of the mass-flow gas meter outside mass-flow gas meter in the doping case and the doping case is controlled by analog quantity (voltage) output unit output voltage signal.The feedback signal of the feedback signal of mass-flow gas meter, the feedback signal of vacuumometer, voltage of supply, and a plurality of feedback signals such as signal of supply current feedback signal after by the current/voltage-converted module all be to feed back in the programmable logic controller through analog quantity (voltage) input block, through after the Signal Processing, feed back to the display part of touch-screen, show situation about being controlled.
Motor controling part branch flow process is: the manual governing encoder by each axle (go up to change, change down, go up speed, speed, coil move down) is imported given signal through data line to digital motion controller, the operation result of the program that process digital motion controller inside has configured, be connected with the respective socket of interconnecting modules by data line, use respective socket that data line passes through interconnecting modules respectively to (go up change, change down, go up speed, speed, coil move down) each servo-driver input control signal more respectively, control each every motion.With data line feedback signal is divided into two-way respectively by the encoder that itself carries on each servomotor again, feed back in each different electric machine control system, one the tunnel inputs on the respective socket of motor servo driver as reverse feedback by the encoder cable, make itself and motor form a closed loop, make motor running speed accurate and stable aspect on more safe and reliable.Another road inputs to digital motion controller as position signal, be used to control the stroke of servomotor and the time of time-delay, input to programmable logic controller by digital motion controller again, after the conversion of ratio is done by portion within it, again signal is input to the control touch-screen and carries out the numeral demonstration, make the operator can be clearly seen that the movement velocity of motor, and make control corresponding.
In addition, the wiring of each contact of pilot contactor of controlling of programmable logic controller by line bank convert to behind the data line be connected with the respective socket of interconnecting modules the direction of motion of controlling each spindle motor and fast with at a slow speed switching.The operator can pass through the given programmable logic controller (PLC) controls signal of touch-screen easily, finishes above action.
The main application of electric control system of zone-melted silicon single crystal furnace in the vapor doping zone-melted silicon single crystal growth:
By under change hands moving speed governing encoder and import given signal to digital motion controller through data line, the operation result of the program that process digital motion controller inside has configured, be connected with the respective socket of interconnecting modules by data line, the servo-driver input control signal that the respective socket of using data line to pass through interconnecting modules is more respectively changeed downwards respectively, control is the motion of rotating motor down.With data line feedback signal is divided into two-way respectively by changeing the encoder that itself carries on the servomotor down again, the one tunnel inputs to the respective socket of motor servo driver as reverse feedback by the encoder cable, makes itself and motor form a closed loop.Another road inputs to digital motion controller as position signal, be used to control the stroke of servomotor and the time of time-delay, input to programmable logic controller by digital motion controller again, after the conversion of ratio is done by portion within it, again signal is input to touch-screen and descends the numeral of rotary speed to show.Give to fix by touch-screen simultaneously and become a full member to, heterodromous instruction, and forward, the setting of heterodromous time, control down rotating motor through programmable logic controller, digital motion controller, servo-driver and carry out forward, reversing motion, carry out forward, reversing motion according to the time of setting thereby in the zone-melted vapor doping silicon monocrystal growth, drive monocrystalline by lower shaft by the time of setting.
2. import given signal through data line to digital motion controller by heater coil manual governing encoder, the operation result of the program that process digital motion controller inside has configured, be connected with the respective socket of interconnecting modules by data line, use respective socket that data line passes through interconnecting modules respectively to the servo-driver input control signal of heater coil more respectively, control is the motion of rotating motor down.With data line feedback signal is divided into two-way respectively by changeing the encoder that itself carries on the servomotor down again, the one tunnel inputs to the respective socket of motor servo driver as reverse feedback by the encoder cable, makes itself and motor form a closed loop.Another road inputs to digital motion controller as position signal, be used to control the stroke of servomotor and the time of time-delay, input to programmable logic controller by digital motion controller again, after the conversion of ratio is done by portion, again signal is input to the numeral demonstration that touch-screen carries out heater coil miles of relative movement within it.
3. doping case part is very crucial for the growth of vapor doping zone-melted silicon single crystal, be to set impurity gas, argon gas, go into the flow of furnace gases mass flowmeter and the pressure of pressure controller by touch-screen, these control signals are converted to the input signal of mass flowmeter and pressure controller in programmable logic controller by the address that configures in advance with programmable logic controller, input to mass rate and take into account pressure controller, the pressure of the size of pilot-gas flow and doping case system; Open impurity gas, argon gas, go into the stove magnetic valve for given signal of programmable logic controller by touch-screen simultaneously, at this moment, impurity gas, argon gas, go into the furnace gases mass flowmeter and control each flow according to given flow set, pressure controller is set the gaseous tension of controlled doping case system according to given pressure, and with unnecessary gas discharge system, mixed impurity gas enters furnace chamber by the impurity gas mass flowmeter according to set(ting)value, the growth vapor doping zone-melted silicon single crystal.Its control mainly is to feed back to programmable logic controller by mass flowmeter again by touch-screen, through after the processing of its inside, is input to the digital display portion of touch-screen, shows its flow.Make it in control, reach accurate to the zone-melted vapor doping single crystal silicon resistivity.
Claims (10)
1. the production method of a vapor doping zone-melted silicon single crystal, comprise the inflation of finding time, doping and isodiametric growth technology, it is characterized in that: in described isodiametric growth technology, utilize electric control system of zone-melted silicon single crystal furnace to carry out following operation: when press touch-screen give fix the instruction that rotating motor forward, reversing motion and heater coil move after, following rotating motor drives monocrystalline and carries out the Direct/Reverse motion according to the time of setting; Forward rotation becomes backward rotation again again after 1～90 second, and so forth motion; After heater coil moves, the center of heater coil is overlapped with the center of lower shaft or depart from 1-50mm.
2. the production method of vapor doping zone-melted silicon single crystal as claimed in claim 1 is characterized in that: the employed zone-melted silicon single crystal Controlling System of this method of described enforcement comprises center control section, electric machine control part, control panel and impurity gas control section; Described center control section comprises the programmable logic controller that contains communication module and link to each other with input/output module, analog quantity input/output module; Described motor controling part branch comprises digital motion controller, interconnecting modules, manual governing encoder, servo-driver and servomotor; Described impurity gas control section comprises the argon gas that gas shield partly uses, the mass-flow gas meter and the doping case part of nitrogen; Described control panel is the touch-screen type control panel, and wherein, touch screen control panel is connected with the communication module of programmable logic controller; Programmable logic controller is connected with digital motion controller by serial ports; The input/output module of programmable logic controller partly is connected with argon gas, the mass-flow gas meter of nitrogen, the doping case of two interconnecting modules and described doping control section respectively by relief relay; Described manual governing encoder is connected with the X-E axle socket of digital motion controller; Two interconnecting modules are connected with E-H axle socket with the X-W axle of digital motion controller respectively, described servomotor comprise rotating motor, down rotating motor, go up speed motor, speed motor and coil mobile motor and connect servo-driver respectively down, and change, change down, go up speed, following speed and coil socket by servo-driver and going up of two interconnecting modules and be connected.
3. the production method of vapor doping zone-melted silicon single crystal as claimed in claim 1, it is characterized in that: in the described gas filling technology of finding time, furnace pressure uses relative pressure to be 0.2bar-6bar.
4. the production method of vapor doping zone-melted silicon single crystal as claimed in claim 1, it is characterized in that: in described isodiametric growth technology, the diameter of isometrical maintenance is 20mm-220mm; The pulling rate of isometrical maintenance is 1mm/min-5mm/min, and the lower shaft rotating speed of isometrical maintenance is 1rpm-30rpm.
5. the production method of vapor doping zone-melted silicon single crystal as claimed in claim 1, it is characterized in that: in described doping process, the impurity gas of use is phosphine (PH
3), borine (B
2H
6), phosphine (PH
3) with mixed gas, the borine (B of argon gas (Ar)
2H
6) with four kinds of impurity gass of mixed gas of argon gas (Ar) in any one; In four kinds of impurity gass, phosphine (PH
3) or borine (B
2H
6) shared concentration ratio is 0.0001%-100%.
6. the employed electric control system of zone-melted silicon single crystal furnace of the production method of vapor doping zone-melted silicon single crystal as claimed in claim 2 is characterized in that: described doping case partly comprises argon gas, the gas that mixes, go into mass-flow gas meter, pressure controller and magnetic valve that stove uses; Wherein magnetic valve is connected with the input/output module of programmable logic controller by relief relay respectively; Argon gas, the gas that mixes, go into mass-flow gas meter, the pressure controller that stove uses and be connected with the input/output module of programmable logic controller.
7. the employed electric control system of zone-melted silicon single crystal furnace of the production method of vapor doping zone-melted silicon single crystal as claimed in claim 2 is characterized in that: what described touch-screen type control panel adopted is the MT510T10.4TFT color touch screen of eView.
8. the employed electric control system of zone-melted silicon single crystal furnace of the production method of vapor doping zone-melted silicon single crystal as claimed in claim 2, it is characterized in that: described programmable logic controller is the C200HG type programmable logic controller that Omron Corp produces, its input, output point are ID216 type load module and the OD219 type output module that Omron Corp produces, and the analog quantity load module of employing and analog output module are AD003 type analog quantity load module and the DA003 type analog output module that Omron Corp produces.
9. the employed electric control system of zone-melted silicon single crystal furnace of the production method of vapor doping zone-melted silicon single crystal as claimed in claim 2, it is characterized in that: the DMC2280 type digital motion controller that described digital motion controller is produced for GALIL company, motor servo driver is that a day intrinsic safety river company produces SGDM08ADA type motor servo driver, its control is gone up and is changeed, the following commentaries on classics, last speed, the servomotor of four axles of following speed is the SGMAH-08AAA41 type AC servo motor that day intrinsic safety river company produces, and the servomotor that control coil moves is day SGMAH-08A1A41 type AC servo motor of intrinsic safety river company production.
10. the employed electric control system of zone-melted silicon single crystal furnace of the production method of vapor doping zone-melted silicon single crystal as claimed in claim 2 is characterized in that: the mass-flow gas meter that the nitrogen of described gas shield part, argon gas use is 5850 types, the 5851 type mass-flow gas meters that BROOKS company produces; Doping gas, the argon gas of doping case part and go into mass-flow gas meter and the pressure controller thereof that stove uses and be 5850 type mass-flow gas meters and the 5866 type pressure controllers that BROOKS company produces.
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| EP2058420A1 (en) * | 2006-09-29 | 2009-05-13 | Sumco Techxiv Corporation | Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program |
| CN101979719A (en) * | 2010-11-03 | 2011-02-23 | 天津市环欧半导体材料技术有限公司 | Method for producing gas phase heavy phosphorus-doped float zone silicon single crystal |
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