TWI613333B - Method for forming monocrystalline silicon and wafer - Google Patents
Method for forming monocrystalline silicon and wafer Download PDFInfo
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- TWI613333B TWI613333B TW105126283A TW105126283A TWI613333B TW I613333 B TWI613333 B TW I613333B TW 105126283 A TW105126283 A TW 105126283A TW 105126283 A TW105126283 A TW 105126283A TW I613333 B TWI613333 B TW I613333B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
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Abstract
本發明提供了一種單晶矽錠及晶圓的形成方法，採用區熔法形成單晶矽錠時，對熔融區中的矽通入含有氘元素的氣體，使氘元素存儲在單晶矽錠的間隙中，降低碳元素及其他雜質的含量；採用單晶矽錠形成晶圓後，在晶圓上形成元件時，氘元素能夠擴散出，並與介面處的懸空鍵進行結合，形成較為穩定的結構，從而增加元件對熱載子的抵抗能力，降低漏電流，提高元件的性能與可靠性。 The invention provides a method for forming a single crystal silicon ingot and a wafer. When a single crystal silicon ingot is formed by a zone melting method, a gas containing a deuterium element is introduced into the silicon in the melting zone, so that the deuterium element is stored in the single crystal silicon ingot. In the gap, the content of carbon elements and other impurities is reduced; after the wafer is formed using a single crystal silicon ingot, the deuterium element can diffuse out when forming a component on the wafer and combine with the dangling bonds at the interface to form a more stable Structure, thereby increasing the resistance of the element to hot carriers, reducing leakage current, and improving the performance and reliability of the element.
Description
本發明涉及區熔法單晶生長領域及半導體製造領域，特別涉及一種單晶矽錠及晶圓的形成方法。 The invention relates to the field of single-crystal growth and semiconductor manufacturing in the zone melting method, in particular to a method for forming single-crystal silicon ingots and wafers.
單晶矽作為一種半導體材料被廣泛應用於半導體元件領域，因此需求量極大，而採用區熔法生長單晶矽是獲取單晶矽的一種重要方法。 As a semiconductor material, single crystal silicon is widely used in the field of semiconductor components, so the demand is huge, and single-crystal silicon growth by zone melting is an important method to obtain single crystal silicon.
區熔法又稱FZ法，即懸浮區熔法。是利用熱能在原料棒的一端產生一熔融區，再熔接單晶籽晶。調節溫度使熔融區緩慢地向原料棒的另一端移動，通過整根原料棒，生長成一根單晶，晶向與籽晶的相同。區熔法製備矽單晶具有如下優點：1、不使用坩堝，單晶生長過程不會被坩堝材料污染；2、由於雜質分凝和蒸發效應，可以生長出高電阻率的矽單晶。 The zone melting method is also called FZ method, that is, the suspension zone melting method. The heat energy is used to generate a melting zone at one end of the raw material rod, and then the single crystal seed crystal is welded. Adjust the temperature to slowly move the melting zone to the other end of the raw rod, and grow a single crystal through the entire raw rod with the same crystal orientation as the seed crystal. The zone melting method for preparing silicon single crystals has the following advantages: 1. Without the use of a crucible, the single crystal growth process will not be contaminated by the crucible materials; 2. Due to the effect of impurity segregation and evaporation, silicon single crystals with high resistivity can be grown.
使原料棒局部熔化的一般方法為：將柱狀的原料棒固定於卡盤，一個金屬線圈沿多晶長度方向緩慢移動並通過原料棒，在金屬線圈中通過高功率的射頻電流，射頻功率電磁場將在原料棒中引起渦流，產生焦耳熱，通過調整線圈功率，可以使得原料棒緊鄰線圈的部分熔化，線圈移過後，熔料結晶為單晶，其晶向與籽晶的相同。另一種使原料棒局部熔化的方法是使用聚焦電子束。整個區熔生長裝置可置於真空系統中，或者有 保護氣氛的封閉腔室內。 The general method of partially melting the raw material rod is: fixing the columnar raw material rod to the chuck, a metal coil slowly moves along the length of the polycrystal and passes through the raw material rod, and passes a high-power radio frequency current in the metal coil, and an electromagnetic field of radio frequency power Eddy current will be caused in the raw material rod, and Joule heat will be generated. By adjusting the coil power, the part of the raw material rod close to the coil can be melted. After the coil is moved, the melt crystallizes into a single crystal with the same crystal orientation as the seed crystal. Another method to locally melt the raw rod is to use a focused electron beam. The entire zone melt growth device can be placed in a vacuum system, or Protected atmosphere in a closed chamber.
工業界普遍採用氣體摻雜法應用于區熔法生長矽單晶。這種摻雜技術是將易揮發的PH4(N型摻雜)或B2H6(P型摻雜)氣體藉著氬氣(Ar)稀釋後直接吹入熔融區進行摻雜。其優點是製造商不需要再存儲不同電阻率的多晶矽原料棒。但是，在形成單晶矽的過程中仍舊不可避免的會引入雜質，例如碳。在矽的熔融溫度下，碳滲入晶格，隨著單晶矽從熔融矽中生長並冷卻，碳殘留在單晶矽中，進而影響後續形成的半導體元件的性能與可靠性。 The gas doping method is widely used in industry to grow silicon single crystals by zone melting. This doping technique involves diluting volatile PH 4 (N-type doping) or B 2 H 6 (P-type doping) gas with argon (Ar) and directly blowing it into the melting region for doping. The advantage is that manufacturers do not need to store polysilicon rods with different resistivities. However, it is still unavoidable that impurities such as carbon are introduced during the formation of single crystal silicon. At the melting temperature of silicon, carbon penetrates into the crystal lattice, and as the single crystal silicon grows and cools from the molten silicon, carbon remains in the single crystal silicon, which further affects the performance and reliability of the subsequently formed semiconductor elements.
因此，如何降低單晶矽中碳及其他雜質的含量，提高半導體元件的性能與可靠性是本領域技術人員需要解決的一個技術問題。 Therefore, how to reduce the content of carbon and other impurities in the single crystal silicon and improve the performance and reliability of the semiconductor device is a technical problem that those skilled in the art need to solve.
本發明的目的在於提供一種單晶矽錠及晶圓的形成方法，能夠減少雜質的形成，提高後續半導體元件的性能。 An object of the present invention is to provide a method for forming a single crystal silicon ingot and a wafer, which can reduce the formation of impurities and improve the performance of subsequent semiconductor elements.
本發明提供一種單晶矽錠的形成方法，在熔融區的矽中通入含有氘元素的氣體。 The invention provides a method for forming a single crystal silicon ingot, and a gas containing a deuterium element is introduced into the silicon in the melting zone.
進一步的，在所述單晶矽錠的形成方法中，所述氣體為氘氣。 Further, in the method for forming a single crystal silicon ingot, the gas is deuterium gas.
進一步的，在所述單晶矽錠的形成方法中，所述氣體為氘氣與氬氣、氫氣或氮氣中的一種或多種氣體的混合氣體。 Further, in the method for forming a single crystal silicon ingot, the gas is a mixed gas of deuterium and one or more gases of argon, hydrogen, or nitrogen.
進一步的，在所述單晶矽錠的形成方法中，所述氣體為氘氣與氬氣的混合氣體。 Further, in the method for forming a single crystal silicon ingot, the gas is a mixed gas of deuterium and argon.
進一步的，在所述單晶矽錠的形成方法中，所述氘氣與氬氣的百分比為0.1%~99%。 Further, in the method for forming a single crystal silicon ingot, the percentage of the deuterium gas and the argon gas is 0.1% to 99%.
進一步的，在所述單晶矽錠的形成方法中，所述氣體還包括摻雜氣體，所述摻雜氣體為PH3、AsH3或B2H6。 Further, in the method for forming a single crystal silicon ingot, the gas further includes a doping gas, and the doping gas is PH 3 , AsH 3 or B 2 H 6 .
進一步的，在所述單晶矽錠的形成方法中，所述含有氘元素的氣體通入熔融區的矽中，通過以下方式進行：由設置于單晶製造裝置中環繞原料棒並與射頻加熱線圈固定連接的氣體噴射器噴射至熔融區的矽中。 Further, in the method for forming a single crystal silicon ingot, the gas containing deuterium is passed into the silicon in the melting zone, and the method is as follows: the raw material rod is arranged in a single crystal manufacturing device and is heated with radio frequency A gas injector attached to the coil is injected into the silicon in the melting zone.
進一步的，在所述單晶矽錠的形成方法中，在通入熔融區之前，所述含有氘元素的氣體在氣體混合箱中進行混合。 Further, in the method for forming a single crystal silicon ingot, before passing into the melting zone, the gas containing deuterium is mixed in a gas mixing box.
進一步的，在所述單晶矽錠的形成方法中，移動設置于單晶製造裝置中的射頻線圈與氣體噴射器使得熔融區從原料棒的一端移動到另一端。 Further, in the method for forming a single crystal silicon ingot, moving a radio frequency coil and a gas ejector provided in a single crystal manufacturing apparatus to move the melting zone from one end of the raw material rod to the other end.
進一步的，在所述單晶矽錠的形成方法中，重複上述步驟一次或多次，並且在重複時不通入氣體。 Further, in the method for forming a single crystal silicon ingot, the above steps are repeated one or more times, and no gas is introduced during the repetition.
相應的，本發明還提供一種晶圓的形成方法，採用單晶矽錠作為原始材料形成晶圓，所述單晶矽錠採用上述單晶矽錠的形成方法形成，所述晶圓中含有氘元素。 Correspondingly, the present invention also provides a method for forming a wafer, wherein a single crystal silicon ingot is used as a raw material to form a wafer, and the single crystal silicon ingot is formed using the method for forming a single crystal silicon ingot, and the wafer contains deuterium element.
進一步的，在所述晶圓的形成方法中，包括步驟：對所述單晶矽錠依次進行切薄、表面磨削、拋光、邊緣處理及清洗處理，形成晶圓。 Further, the method for forming the wafer includes the steps of sequentially performing thinning, surface grinding, polishing, edge processing, and cleaning processing on the single crystal silicon ingot to form a wafer.
與現有技術相比，本發明具有以下優點：採用區熔法形成單晶矽錠時，對熔融區中的矽通入含有氘元素的氣體，使氘元素存儲在單晶矽錠的間隙中，降低碳元素及其他雜質的含量；採用單晶矽錠形成晶圓後， 在晶圓上形成元件時，氘元素能夠擴散出，並與介面處的懸空鍵進行結合，形成較為穩定的結構，從而增加元件對熱載子的抵抗能力，降低漏電流，提高元件的性能與可靠性。 Compared with the prior art, the present invention has the following advantages: When a single crystal silicon ingot is formed by the zone melting method, a gas containing deuterium is introduced into the silicon in the melting zone, so that the deuterium element is stored in the gap between the single crystal silicon ingots. Reduce the content of carbon and other impurities; after forming a wafer with a single crystal silicon ingot, When a component is formed on a wafer, deuterium can diffuse out and combine with the dangling bonds at the interface to form a more stable structure, thereby increasing the resistance of the component to hot carriers, reducing leakage current, and improving the performance and performance of the component. reliability.
20‧‧‧原料棒 20‧‧‧ Raw rod
30‧‧‧熔融區 30‧‧‧Melting zone
40‧‧‧單晶棒 40‧‧‧Single crystal rod
100‧‧‧氣體噴射器 100‧‧‧Gas injector
200‧‧‧射頻加熱線圈 200‧‧‧RF heating coil
300‧‧‧氣體混合箱 300‧‧‧Gas mixing box
400‧‧‧品質流量控制器 400‧‧‧Quality Flow Controller
第1圖為本發明一實施例中單晶矽錠的形成方法的流程圖。 FIG. 1 is a flowchart of a method for forming a single crystal silicon ingot according to an embodiment of the present invention.
第2圖為本發明一實施例中單晶製造裝置形成單晶矽錠的示意圖。 FIG. 2 is a schematic diagram of forming a single crystal silicon ingot in a single crystal manufacturing apparatus according to an embodiment of the present invention.
第3圖為本發明一實施例中單晶製造裝置中氣體噴射器與氣體混合箱的連接示意圖。 FIG. 3 is a schematic diagram of a connection between a gas injector and a gas mixing box in a single crystal manufacturing apparatus according to an embodiment of the present invention.
為使本發明的內容更加清楚易懂，以下結合說明書附圖，對本發明的內容做進一步說明。當然本發明並不局限於該具體實施例，本領域的技術人員所熟知的一般替換也涵蓋在本發明的保護範圍內。 In order to make the content of the present invention more clear and easy to understand, the content of the present invention is further described below with reference to the accompanying drawings of the description. Of course, the present invention is not limited to this specific embodiment, and general substitutions well known to those skilled in the art are also covered by the protection scope of the present invention.
其次，本發明利用示意圖進行了詳細的表述，在詳述本發明實例時，為了便於說明，示意圖不依照一般比例局部放大，不應對此作為本發明的限定。 Secondly, the present invention is described in detail using a schematic diagram. In detailing the examples of the present invention, for the convenience of explanation, the schematic diagram is not partially enlarged according to general proportions, and should not be used as a limitation on the present invention.
本發明的核心思想是：採用區熔法形成單晶矽錠時，對熔融區中的矽通入含有氘元素的氣體，使氘元素存儲在單晶矽錠的間隙中，降低碳元素及其他雜質的含量；採用單晶矽錠形成晶圓後，在晶圓上形成元件時，氘元素能夠擴散出，並與介面處的懸空鍵進行結合，形成較為穩定的結構，從而增加元件對熱載子的抵抗能力，降低漏電流，提高元件的性能與可靠性。 The core idea of the present invention is: when a single crystal silicon ingot is formed by the zone melting method, a gas containing deuterium element is introduced into the silicon in the melting zone, so that the deuterium element is stored in the gap between the single crystal silicon ingot, and carbon and other elements are reduced The content of impurities; after the wafer is formed using a single crystal silicon ingot, the deuterium element can diffuse out when forming a component on the wafer and combine with the dangling bonds at the interface to form a more stable structure, thereby increasing the component's heat load. It can reduce the leakage current and improve the performance and reliability of components.
本發明提出的一種單晶矽錠的形成方法，在熔融區的矽中通入含有氘元素的氣體，具體的，所述氣體可以為單純的氘氣，或者氘氣與氬氣、氫氣或氮氣中的一種或多種氣體的混合氣體，在混合氣體中優選的一種組合為氘氣與氬氣的混合氣體，所述氘氣與氬氣的百分比為0.1%~99%，例如是50%，具體的，可以根據工藝的要求來決定，再次不作限定。 The invention provides a method for forming a single crystal silicon ingot. A gas containing deuterium is introduced into the silicon in the melting zone. Specifically, the gas may be simple deuterium, or deuterium and argon, hydrogen, or nitrogen. A mixed gas of one or more kinds of gases, and a preferred combination in the mixed gas is a mixed gas of deuterium and argon, and the percentage of the deuterium and argon is 0.1% to 99%, for example, 50%, specifically It can be determined according to the requirements of the process and is not limited again.
所述氣體還包括摻雜氣體，所述摻雜氣體為PH3、AsH3或B2H6，與含有氘元素的氣體混合後直接通入熔融區的矽中進行N型或P型摻雜。 The gas also includes a doping gas. The doping gas is PH 3 , AsH 3, or B 2 H 6. After mixing with a gas containing deuterium, the gas is directly passed into the silicon of the melting region for N-type or P-type doping. .
具體的，請參照第1圖，其為本發明一實施例中單晶矽錠的形成方法的流程圖，如第1圖所示，在步驟S01中，將一原料棒固定於卡盤，射頻加熱線圈沿所述原料棒的長度方向緩慢移動並通過所述原料棒，在所述原料棒的一端產生熔融區，再熔接單晶籽晶，利用氣體噴射器向所述熔融區噴射含有氘元素的氣體。本實施例中，採用一單晶製造裝置形成單晶矽錠的示意圖如第2圖所示，所述單晶製造裝置包括一氣體噴射器100與一射頻加熱線圈200，所述氣體噴射器100與所述射頻加熱線圈200形狀相同，共同環繞原料棒20，且所述氣體噴射器100與所述射頻加熱線圈200固定連接。所述射頻加熱線圈200在所述原料棒20的一端產生一熔融區30，所述氣體噴射器100向所述熔融區30噴射含有氘元素的氣體，冷卻之後形成單晶棒40，晶向與籽晶的相同。 Specifically, please refer to FIG. 1, which is a flowchart of a method for forming a single-crystal silicon ingot according to an embodiment of the present invention. As shown in FIG. 1, in step S01, a raw material rod is fixed to a chuck. The heating coil moves slowly along the length of the raw material rod and passes through the raw material rod, a melting zone is generated at one end of the raw material rod, and then a single crystal seed crystal is welded, and the deuterium-containing element is sprayed into the molten zone by a gas ejector. gas. In this embodiment, a schematic diagram of forming a single crystal silicon ingot by using a single crystal manufacturing apparatus is shown in FIG. 2. The single crystal manufacturing apparatus includes a gas injector 100 and a radio frequency heating coil 200. The gas injector 100 The radio frequency heating coil 200 has the same shape as the radio frequency heating coil 200, and surrounds the raw material rod 20 together, and the gas injector 100 is fixedly connected to the radio frequency heating coil 200. The radio frequency heating coil 200 generates a melting zone 30 at one end of the raw material rod 20. The gas ejector 100 injects a gas containing deuterium into the melting zone 30 and forms a single crystal rod 40 after cooling. The seeds are the same.
在步驟S02中，移動所述射頻加熱線圈200與氣體噴射器100，使得熔融區30從原料棒20的一端移動到另一端，最終形成完整的單晶 棒40，即單晶矽錠。 In step S02, the radio frequency heating coil 200 and the gas ejector 100 are moved, so that the melting zone 30 is moved from one end to the other end of the raw material rod 20, and a complete single crystal is finally formed. The rod 40 is a single crystal silicon ingot.
所述氣體噴射器100包括一環形管，在所述環形管上設置有進氣端，並且在所述環形管上開設有數個氣孔，從而使得摻雜氣流能夠更加均勻的分佈在熔融區周圍，使得熔融區對摻雜氣體的吸收率大大增加，從而提高了氣相摻雜矽單晶的電阻均勻性，同時節約了摻雜源。所述單晶製造裝置還包括氣體混合箱300及品質流量控制器400，其連接示意圖如第3圖所示，所述氣體混合箱300具有冷卻裝置，且所述氣體混合箱300的出氣口與所述氣體噴射器100相連，所述品質流量控制器400與所述氣體混合箱300的進氣口連接，用於控制通入所述氣體混合箱300的氣體，所述單晶製造裝置包含有多個品質流量控制器400，用於控制不同的氣體分別通入所述氣體混合箱300中進行混合，第3圖中僅標示了兩個。含有氘元素的氣體通過品質流量控制器400通入至氣體混合箱300進行混合冷卻後再傳輸至所述氣體噴射器100，然後噴射至熔融區30進行長晶摻雜。 The gas ejector 100 includes a circular tube, an air inlet end is provided on the circular tube, and a plurality of air holes are provided on the circular tube, so that the doping gas flow can be more uniformly distributed around the melting zone. The absorption rate of the doped gas in the melting region is greatly increased, thereby improving the resistance uniformity of the vapor-doped silicon single crystal and saving the doping source. The single crystal manufacturing device further includes a gas mixing box 300 and a mass flow controller 400. The connection diagram is shown in FIG. 3, the gas mixing box 300 has a cooling device, and an air outlet of the gas mixing box 300 and The gas injector 100 is connected, the mass flow controller 400 is connected to the air inlet of the gas mixing tank 300, and is used to control the gas flowing into the gas mixing tank 300. The single crystal manufacturing device includes A plurality of mass flow controllers 400 are used to control different gases to pass into the gas mixing box 300 for mixing, and only two are marked in the third figure. The gas containing deuterium is introduced into the gas mixing box 300 through the mass flow controller 400 for mixing and cooling, and then is transmitted to the gas ejector 100, and then injected into the melting zone 30 for doped growth.
在熔融區30中通入含有氘元素的氣體，能夠控制後續形成的單晶矽錠中產生聚集到一起的點缺陷及碳元素的團聚等不良缺陷，減少該類缺陷的產生，並且氘元素存儲在單晶矽錠的間隙中，能夠降低碳元素及其他雜質的含量，在後續形成晶圓後，在晶圓上製作元件時，氘元素能夠擴散出，並與介面處的懸空鍵進行結合，形成較為穩定的結構，從而增加元件對熱載子的抵抗能力，降低漏電流，提高元件的性能與可靠性。 The introduction of a gas containing deuterium in the melting zone 30 can control the defects such as point defects and carbon agglomeration, which are generated in the single crystal silicon ingot formed later, reduce the generation of such defects, and store the deuterium element. In the gap between the single crystal silicon ingots, the content of carbon elements and other impurities can be reduced. After the subsequent formation of the wafer, when the element is fabricated on the wafer, the deuterium element can diffuse out and combine with the dangling bonds at the interface. A more stable structure is formed, thereby increasing the resistance of the device to hot carriers, reducing leakage current, and improving the performance and reliability of the device.
一般情況下，大多數雜質在凝固矽中的溶解度小於在熔融區矽中的溶解度，因此，通過熔融區可以轉移大量的雜質，減少冷卻之後形成的單晶棒中的雜質數量，使得雜質不斷的向原料晶棒遠離單晶棒的一端 聚集，最終通過切割的方式去除含有大量雜質的原料棒，形成含有少量雜質的單晶棒。為了不斷減少單晶棒中雜質的含量，可以重複上述步驟一次或多次，因此所述單晶矽錠的方法還包括步驟S03：重複步驟S01與S02一次或多次，並且在重複時不需要通入含有氘元素的氣體，從而不斷減少單晶棒中的雜質含量，其具體的重複次數根據實際的工藝條件決定，在此不做限制。之後，可以根據所需晶圓的直徑對形成的單晶矽錠進行滾圓，形成規則的圓柱形，再對規則的單晶矽錠進行製作形成晶圓。 In general, the solubility of most impurities in solidified silicon is lower than that of silicon in the melting zone. Therefore, a large amount of impurities can be transferred through the melting zone, reducing the amount of impurities in the single crystal rod formed after cooling, making the impurities constantly To the end of the raw crystal rod away from the single crystal rod Aggregate, and finally remove the raw rod containing a large amount of impurities by cutting to form a single crystal rod containing a small amount of impurities. In order to continuously reduce the content of impurities in the single crystal rod, the above steps may be repeated one or more times. Therefore, the method for the single crystal silicon ingot further includes step S03: repeating steps S01 and S02 one or more times, and it is not necessary when repeating The gas containing deuterium is introduced to continuously reduce the impurity content in the single crystal rod. The specific number of repetitions is determined according to the actual process conditions, and is not limited here. After that, the formed single crystal silicon ingot can be rounded according to the diameter of the required wafer to form a regular cylindrical shape, and then the regular single crystal silicon ingot is fabricated to form a wafer.
在本實施例的另一方面，還提出一種晶圓的形成方法，採用單晶矽錠作為原始材料形成晶圓，所述單晶矽錠採用如上文所述的單晶矽錠的形成方法形成，所述晶圓含氘摻雜原子。 In another aspect of this embodiment, a method for forming a wafer is also proposed. The wafer is formed using a single crystal silicon ingot as a raw material, and the single crystal silicon ingot is formed using the method for forming a single crystal silicon ingot as described above. The wafer contains deuterium-doped atoms.
具體的，所述晶圓的形成方法包括步驟：對所述單晶矽錠依次進行切薄、表面磨削、拋光、邊緣處理及清洗處理，形成晶圓。 Specifically, the method for forming a wafer includes the steps of: performing thinning, surface grinding, polishing, edge processing, and cleaning processing on the single crystal silicon ingot in order to form a wafer.
後續可以在晶圓上形成元件，由於氘元素存儲在晶圓的間隙中，降低了碳元素和其他雜質的含量，並且氘元素能夠擴散出，並與介面處的懸空鍵進行結合，形成較為穩定的結構，從而增加元件對熱載子的抵抗能力，降低漏電流，提高元件的性能與可靠性。 Subsequent elements can be formed on the wafer. As the deuterium element is stored in the gap between the wafers, the content of carbon and other impurities is reduced, and the deuterium element can diffuse out and combine with the dangling bonds at the interface to form a more stable Structure, thereby increasing the resistance of the element to hot carriers, reducing leakage current, and improving the performance and reliability of the element.
綜上所述，本發明提供的單晶矽錠及晶圓的形成方法，採用區熔法形成單晶矽錠時，對熔融區中的矽通入含有氘元素的氣體，使氘元素存儲在單晶矽錠的間隙中，降低碳元素及其他雜質的含量；採用單晶矽錠形成晶圓後，在晶圓上形成元件時，氘元素能夠擴散出，並與介面處的懸空鍵進行結合，形成較為穩定的結構，從而增加元件對熱載子的抵抗能力，降低漏電流，提高元件的性能與可靠性。 In summary, in the method for forming a single crystal silicon ingot and a wafer provided by the present invention, when a single crystal silicon ingot is formed by a zone melting method, a gas containing deuterium is introduced into the silicon in the melting zone, so that the deuterium element is stored in In the gap between single crystal silicon ingots, the content of carbon elements and other impurities is reduced. When a single crystal silicon ingot is used to form a wafer, the deuterium element can diffuse out when it is formed on the wafer and combine with the dangling bonds at the interface. , Forming a more stable structure, thereby increasing the resistance of the element to hot carriers, reducing leakage current, and improving the performance and reliability of the element.
上述僅為本發明的優選實施例而已，並不對本發明起到任何限制作用。任何所屬技術領域的技術人員，在不脫離本發明的技術方案的範圍內，對本發明揭露的技術方案和技術內容做任何形式的等同替換或修改等變動，均屬未脫離本發明的技術方案的內容，仍屬於本發明的保護範圍之內。 The above are only preferred embodiments of the present invention, and do not play any limiting role on the present invention. Any person skilled in the art, within the scope not departing from the technical solution of the present invention, make any equivalent replacement or modification to the technical solution and technical content disclosed in the present invention without departing from the technical solution of the present invention. The content still falls within the protection scope of the present invention.
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