CN103305905A - Variable crucible ratio monocrystal silicon growth method - Google Patents
Variable crucible ratio monocrystal silicon growth method Download PDFInfo
- Publication number
- CN103305905A CN103305905A CN2013102118520A CN201310211852A CN103305905A CN 103305905 A CN103305905 A CN 103305905A CN 2013102118520 A CN2013102118520 A CN 2013102118520A CN 201310211852 A CN201310211852 A CN 201310211852A CN 103305905 A CN103305905 A CN 103305905A
- Authority
- CN
- China
- Prior art keywords
- crucible
- monocrystal silicon
- monocrystalline silicon
- single crystal
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a variable crucible ratio monocrystal silicon growth method which comprises the following steps of: growing monocrystal silicon in a crucible; and after the monocrystal silicon enters constant-diameter growth, regulating variable crucible ratio to continuously increase so as to carry out variable crucible ratio monocrystal silicon growth. According to the variable crucible ratio monocrystal silicon growth method disclosed by the invention, the liquid level of monocrystal interface growth can be slowly increased, the natural thermal convection of a molten mass can be effectively accelerated, the oxygen content concentration of the molten mass can be kept and the axial oxygen content consistency of monocrystal silicon can be effectively improved; and the variable crucible ratio monocrystal silicon growth method is convenient to operate and suitable for the industrialized production.
Description
Technical field
The present invention relates to monocrystalline silicon piece processing and manufacturing field, particularly a kind of monocrystalline silicon growing method.
Background technology
The czochralski silicon monocrystal growth method claims the Czochralski method again, be called for short the CZ method, be that high-purity polycrystalline is placed in the quartz crucible, heat makes its fusing, recycling seed crystal and rotary pulling method progressively grow out silicon single crystal by steps such as seeding, shouldering, commentaries on classics shoulder, isometrical, endings.Because used quartz crucible in the process, at high temperature quartz crucible and molten silicon contact reacts: Si+SiO
2=2SiO, the SiO of generation enter into molten silicon.In crystal growing process, unavoidably introduced oxygen impurities.
Oxygen impurities in the silicon is reunited easily, forms oxygen precipitation, brings out dislocation under the high temperature, and secondary defects such as fault greatly influence device performance, therefore in early days in the application of semiconductor material, it is believed that oxygen only is detrimental impurity, makes great efforts to reduce the oxygen level in the silicon single crystal.But along with technical progress and research are goed deep into, the effect that has intrinsic gettering after impurity oxygen is reunited, can Adsorption of Heavy Metal Ions, microdefect etc., thereby the impurity of device process introducing and the microdefect density of crystal growing process have greatly been reduced, reduce impurity and the defective of device active region and polluted, improved device performance.Impurity oxygen not only has the Internal Gettering of Silicon Wafers ability, also has dislocation locking effect preferably simultaneously, can improve the physical strength of silicon chip greatly.
For general silicon single crystal, oxygen level generally is that the head height tail is low, and progressively descending distributes.Too high oxygen level is then brought out secondary defect easily, and oxygen concn crosses that low then the intrinsic gettering effect is not obvious.The silicon chip of different oxygen concentrations is being made the device process because intrinsic gettering effect and the inconsistent device property that causes of induced defect situation have certain otherness, influence element manufacturing to shelves and consistence.Therefore axially the stronger monocrystalline silicon piece of oxygen level consistence can effectively improve the device consistence.
Summary of the invention
Technical problem to be solved by this invention just provides a kind of monocrystalline silicon growing method, effectively improves the axial oxygen level consistence of silicon single crystal.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of monocrystalline silicon growing method that becomes the crucible ratio, and silicon single crystal is grown in crucible, it is characterized in that: after treating that silicon single crystal enters isodiametric growth, adjust the crucible crucible than constantly increasing, become crucible and compare monocrystalline silicon growing.
Preferably, in the monocrystalline silicon growing process, the silicon single crystal length percent with crucible than the pass that increases per-cent is:
Silicon single crystal length percent crucible is than increasing per-cent
Preferably, in the monocrystalline silicon growing process, select high-purity argon gas as shielding gas, the high-purity argon gas flow is 20～120slpm.
Preferably, in the monocrystalline silicon growing process, the crystal rotating speed is 10～25rpm.
Preferably, in the monocrystalline silicon growing process, crucible rotation is 4～12rpm.
Crucible described above than for the crucible climbing speed than the last crystal rate of pulling, be called for short the crucible ratio.The present invention can slowly improve monocrystalline interface growth liquid level by becoming the crucible ratio, effectively accelerates the melt thermal natural convection, keeps oxygen level concentration in the melt, effectively improves the axial oxygen level consistence of silicon single crystal, and is easy to operate, is fit to suitability for industrialized production.
Advantage of the present invention:
1, the present invention adopts the method for monocrystal growth that becomes the crucible ratio, and operation realizes simple;
2, the present invention and actual production are compatible strong, are easy to industrialization;
3, the axial good uniformity of monocrystalline of the present invention's growth, (Oimax-Oimin)/Oimax＜8%.
Embodiment
The present invention will be further described below in conjunction with specific embodiment.
Embodiment 1:
Adopt CG6000 type single crystal growing furnace, 16 cun thermal fields, polycrystalline 25kg that feeds intake, pulling monocrystal silicon head target resistivity 35 ohmcms, silicon single crystal model N-type, silicon single crystal size are 4 cun.Adopt constant voltage 40torr, argon flow amount 40slpm, crucible rotation 5rpm, crystal rotating speed 12rpm.
Concrete steps are as follows:
(1) cleaning thermal field, single crystal growing furnace, quartz crucible;
(2) polycrystalline and doping agent are carefully put into quartz crucible;
(3) sealing single crystal growing furnace repeatedly washes single crystal growing furnace and vacuumizes check vacuum leak rate with argon gas;
(4) open argon flow amount, heater is heated, melting polycrystalline silicon;
(5) treat that polycrystalline melts fully, the downward modulation heater power keeps 1450 degrees centigrade of melt melted states;
(6) carry out seeding, shouldering, commentaries on classics shoulder, isometrical, ending according to setting technology;
(7) ending back crystal is to carry in the rotation of 150mm/h speed, and be 4 hours cooling time.
Crucible is as follows than changing conditions in the step (6):
| Monocrystalline length (mm) | The crucible ratio |
| 0 | 0.067 |
| 200 | 0.071 |
| 400 | 0.074 |
| 600 | 0.080 |
| 800 | 0.093 |
| 967 | 0.117 |
Get the 2mm print at head, middle part, the afterbody of monocrystalline respectively and carry out the oxygen level test, test value is respectively: 28.32ppma, 28.54ppma, 27.13ppma.The axial homogeneity of oxygen level=(28.54-27.13)/28.54=4.9%.
Embodiment 2:
Adopt CG6000 type single crystal growing furnace, 16 cun thermal fields, polycrystalline 30kg that feeds intake, pulling monocrystal silicon head target resistivity 50 ohmcms, silicon single crystal model N-type, silicon single crystal size are 5 cun.Adopt constant voltage 35torr, argon flow amount 50slpm, crucible rotation 6rpm, crystal rotating speed 14rpm.
Concrete steps are as follows:
(1) cleaning thermal field, single crystal growing furnace, quartz crucible;
(2) polycrystalline and doping agent are carefully put into quartz crucible;
(3) sealing single crystal growing furnace repeatedly washes single crystal growing furnace and vacuumizes check vacuum leak rate with argon gas;
(4) open argon flow amount, heater is heated, melting polycrystalline silicon;
(5) treat that polycrystalline melts fully, the downward modulation heater power keeps 1450 degrees centigrade of melt melted states;
(6) carry out seeding, shouldering, commentaries on classics shoulder, isometrical, ending according to setting technology;
(7) ending back crystal is to carry in the rotation of 150mm/h speed, and be 4.5 hours cooling time.
Crucible is as follows than changing conditions in the step (6):
| Monocrystalline length (mm) | The crucible ratio |
| 0 | 0.105 |
| 150 | 0.111 |
| 300 | 0.117 |
| 450 | 0.126 |
| 600 | 0.148 |
| 785 | 0.186 |
Get the 2mm print at head, middle part, the afterbody of monocrystalline respectively and carry out the oxygen level test, test value is respectively: 30.50ppma, 30.00ppma, 29.87ppma.The axial homogeneity of oxygen level is (30.5-29.87)/30.5=2.6%.
Claims (5)
1. monocrystalline silicon growing method that becomes the crucible ratio, silicon single crystal is grown in crucible, it is characterized in that: after treating that silicon single crystal enters isodiametric growth, adjust the crucible crucible than constantly increasing, become crucible and compare monocrystalline silicon growing.
2. the monocrystalline silicon growing method of change crucible ratio according to claim 1 is characterized in that: in the monocrystalline silicon growing process, the silicon single crystal length percent with crucible than the pass that increases per-cent is:
Silicon single crystal length percent crucible is than increasing per-cent
3. the monocrystalline silicon growing method of change crucible ratio according to claim 1 is characterized in that: in the monocrystalline silicon growing process, select high-purity argon gas as shielding gas, the high-purity argon gas flow is 20～120slpm.
4. the monocrystalline silicon growing method of change crucible ratio according to claim 2, it is characterized in that: in the monocrystalline silicon growing process, the crystal rotating speed is 10～25rpm.
5. the monocrystalline silicon growing method of change crucible ratio according to claim 3, it is characterized in that: in the monocrystalline silicon growing process, crucible rotation is 4～12rpm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310211852.0A CN103305905B (en) | 2013-05-30 | 2013-05-30 | A kind of monocrystalline silicon growing method becoming crucible ratio |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310211852.0A CN103305905B (en) | 2013-05-30 | 2013-05-30 | A kind of monocrystalline silicon growing method becoming crucible ratio |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103305905A true CN103305905A (en) | 2013-09-18 |
| CN103305905B CN103305905B (en) | 2015-08-05 |
Family
ID=49131609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310211852.0A Active CN103305905B (en) | 2013-05-30 | 2013-05-30 | A kind of monocrystalline silicon growing method becoming crucible ratio |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103305905B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109576785A (en) * | 2018-12-29 | 2019-04-05 | 徐州鑫晶半导体科技有限公司 | The method of oxygen content during adjusting monocrystalline silicon growing |
| CN113355737A (en) * | 2021-06-02 | 2021-09-07 | 内蒙古和光新能源有限公司 | Preparation method of square silicon core |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0990718A1 (en) * | 1998-02-04 | 2000-04-05 | Sumitomo Metal Industries Limited | Method of producing silicon single crystal and single crystal silicon wafer |
| CN1272147A (en) * | 1997-09-30 | 2000-11-01 | Memc电子材料有限公司 | method and system for controlling growth of silicon crystal |
| JP4048660B2 (en) * | 1999-10-04 | 2008-02-20 | 株式会社Ｓｕｍｃｏ | CZ silicon single crystal manufacturing method |
| CN101400834A (en) * | 2007-05-30 | 2009-04-01 | 胜高股份有限公司 | Silicon single-crystal pullup apparatus |
| CN101922040A (en) * | 2009-06-10 | 2010-12-22 | 江国庆 | Device of oxygen control growth in single crystal furnace |
| CN201704429U (en) * | 2009-06-10 | 2011-01-12 | 江国庆 | Oxygen control growth device in single crystal furnace |
| CN101982569A (en) * | 2010-11-24 | 2011-03-02 | 浙江昱辉阳光能源有限公司 | Position control method and device for silicone liquid level of czochralski crystal grower |
| CN201873777U (en) * | 2010-11-24 | 2011-06-22 | 浙江昱辉阳光能源有限公司 | Silicon fluid level control device |
-
2013
- 2013-05-30 CN CN201310211852.0A patent/CN103305905B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1272147A (en) * | 1997-09-30 | 2000-11-01 | Memc电子材料有限公司 | method and system for controlling growth of silicon crystal |
| EP0990718A1 (en) * | 1998-02-04 | 2000-04-05 | Sumitomo Metal Industries Limited | Method of producing silicon single crystal and single crystal silicon wafer |
| JP4048660B2 (en) * | 1999-10-04 | 2008-02-20 | 株式会社Ｓｕｍｃｏ | CZ silicon single crystal manufacturing method |
| CN101400834A (en) * | 2007-05-30 | 2009-04-01 | 胜高股份有限公司 | Silicon single-crystal pullup apparatus |
| CN101922040A (en) * | 2009-06-10 | 2010-12-22 | 江国庆 | Device of oxygen control growth in single crystal furnace |
| CN201704429U (en) * | 2009-06-10 | 2011-01-12 | 江国庆 | Oxygen control growth device in single crystal furnace |
| CN101982569A (en) * | 2010-11-24 | 2011-03-02 | 浙江昱辉阳光能源有限公司 | Position control method and device for silicone liquid level of czochralski crystal grower |
| CN201873777U (en) * | 2010-11-24 | 2011-06-22 | 浙江昱辉阳光能源有限公司 | Silicon fluid level control device |
Non-Patent Citations (1)
| Title |
|---|
| 滕冉等: "大直径硅单晶生长过程中固/液界面形状及熔体流动的数值分析", 《人工晶体学报》, vol. 42, no. 4, 30 April 2013 (2013-04-30), pages 611 - 615 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109576785A (en) * | 2018-12-29 | 2019-04-05 | 徐州鑫晶半导体科技有限公司 | The method of oxygen content during adjusting monocrystalline silicon growing |
| CN113355737A (en) * | 2021-06-02 | 2021-09-07 | 内蒙古和光新能源有限公司 | Preparation method of square silicon core |
| CN113355737B (en) * | 2021-06-02 | 2022-08-30 | 内蒙古和光新能源有限公司 | Preparation method of square silicon core |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103305905B (en) | 2015-08-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102978699B (en) | The growth of the heavily doped p type single crystal silicon that boron gallium is mixed altogether and adulterating method | |
| CN102978698B (en) | The growth of the heavily doped p type single crystal silicon that a kind of boron gallium is mixed altogether and adulterating method | |
| CN107794563A (en) | A kind of vertical pulling method prepares the processing technology of monocrystalline silicon | |
| CN113564693B (en) | Production method of low-resistivity heavily arsenic-doped silicon single crystal | |
| CN114540950B (en) | Method for growing n-type Czochralski silicon by reducing furnace pressure | |
| WO2023051347A1 (en) | Method for manufacturing nitrogen-doped p-type monocrystalline silicon | |
| CN105951173A (en) | N type monocrystalline silicon crystal ingot and manufacturing method thereof | |
| US20090098715A1 (en) | Process for manufacturing silicon wafers for solar cell | |
| CN103305905B (en) | A kind of monocrystalline silicon growing method becoming crucible ratio | |
| CN105239153B (en) | Single crystal furnace with auxiliary charging structure and application thereof | |
| JP2021502944A (en) | Semi-insulating silicon carbide single crystal doped with a small amount of vanadium, substrate, manufacturing method | |
| CN101671841B (en) | Method for preparing nitrogenous dopant for preparing czochralski silicon single crystal | |
| CN1233883C (en) | Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field | |
| CN102094236B (en) | Czochralski method for growing long-lifetime P-type boron-doped silicon single crystal | |
| CN116043321A (en) | Monocrystalline silicon drawing method for controlling boron enrichment | |
| CN114592236B (en) | Growth method of P-type gallium-doped silicon single crystal | |
| TWI613333B (en) | Method for forming monocrystalline silicon and wafer | |
| CN1807703A (en) | Low oxygen control method in czochralski silicon monocrystal | |
| CN102758253A (en) | Czochralski polycrystalline silicon or monocrystal silicon preparation technology | |
| CN115652426A (en) | Drawing method for reducing fragmentation rate of large-size N-type straight-pulled monocrystalline silicon wafer | |
| CN113774474A (en) | Preparation method for improving single crystal RRV | |
| TW202001012A (en) | Method for growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots | |
| CN102168312A (en) | High-nitrogen-doped silicon chip and rapid nitrogen doping method | |
| KR102429972B1 (en) | High resistivity wafer manufacturing method | |
| KR101403248B1 (en) | Method for manufacturing hydrogen doped silicon and hydrogen doped silicon manufactured thereby, and growing method for silicon ingot |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 313100, No. 1299, front East Street, Changxing County Economic Development Zone, Zhejiang, Huzhou Applicant after: ZHEJIANG ZHONGJING TECHNOLOGY CO., LTD. Address before: 313100 No. 1299, front East Street, Changxing County County, Zhejiang, Huzhou Applicant before: Zhejiang Cowin Electronics Co., Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: ZHEJIANG COWIN ELECTRONICS CO., LTD. TO: ZHEJIANG ZHONGJING TECHNOLOGY CO., LTD. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |