CN1807703A - Low oxygen control method in czochralski silicon monocrystal - Google Patents
Low oxygen control method in czochralski silicon monocrystal Download PDFInfo
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- CN1807703A CN1807703A CN 200510023563 CN200510023563A CN1807703A CN 1807703 A CN1807703 A CN 1807703A CN 200510023563 CN200510023563 CN 200510023563 CN 200510023563 A CN200510023563 A CN 200510023563A CN 1807703 A CN1807703 A CN 1807703A
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Abstract
The invention discloses a hypoxia controlling method of straight pulling monocrystalline, which is characterized by the following: initial magnetic density is 300-2500GS; terminal magnetic density is 1-10GS/min; running speed of crucible is 0. 1-10rpm; running speed of crystal is 10-30rpm; pulling rate of crystal is 0. 5-3mm/min; flow rate of argon gas is 2-7m3/hr; furnace pressure is 1- 4KPa. It is effective to make oxygen content of the whole length of single crystal (charge amount of crucible: 15kg-60kg, diameter of single crystal: Phi2''-Phi6'') in one of three target zones (5.5x10<17>a/cm<3>-7. 0x10<17>a/cm<3>, 5.0x10<17>a/cm<3>-6.5x10<17>a/cm<3>, 4.0x10<17>a/cm<3>-5.5x10<17>a/cm<3>), wherein the oxygen content deviation of the whole length of single crystal is +/-0.5x10<17>a/cm<3>, heterogeneity of radial oxygen content is not more than 5%, yield of single crystal is not less than 60%.
Description
Technical field
The present invention relates in a kind of control czochralski silicon monocrystal oxygen level in middle hypoxemia scope, vertically and radially a kind of preparation method of oxygen level good uniformity.
Background technology
The CZ silicon chip can make the nearly upper layer of silicon chip form a regional clean area that does not have defective by special thermal treatment, and silicon chip inside is then because SiO
2Precipitate forms highdensity defective, and this defective can be absorbed metallic impurity, Here it is IG (intrinsic gettering) intrinsic gettering.Silicon chip with intrinsic gettering ability is called the intrinsic gettering silicon chip, has the intrinsic gettering ability for making silicon chip, needs silicon chip to have certain oxygen level, the silicon chip oxygen level is too low not to have the IG effect, the silicon chip oxygen level is too high, and the oxygen precipitate also can be grown into clean layer, and clean area is just destroyed.Along with IC industry develop rapidly, the unicircuit live width narrows down to present 0.12 ~ 0.1 micron from 2 microns in 1980, even has reached nano level, and the precipitation size of the defect and impurity relevant with oxygen has been equivalent to the IC live width, if element is just done in the above, the yield rate of IC is certain to descend.In view of above two reasons, unicircuit manufacturing concern presses for and uses oxygen level in middle hypoxemia scope, vertically and radially the monocrystalline silicon piece of oxygen level good uniformity.
The main fork-like farm tool used in ancient China source of oxygen is a quartz crucible in the CZ monocrystalline, and molten silicon and quartz crucible reaction generate SiO, and by the thermal convection of melt and the transmission of the forced convection that crystalline substance changes, crucible has been quoted, a part of oxygen enters into crystal and goes.The several method that falls at present oxygen and control oxygen in the CZ monocrystalline is: (1). in the situation that does not add magnetic field, can pass through to regulate silicon liquid level relative position, adjusting crystal and crucible rotation, the molten silicon of change and quartz crucible contact area in well heater realizes with the ratio of molten silicon volatilization area, the methods such as thermal convection that the adjusting thermal field influences melt, oxygen level but above method can only edge down in the monocrystalline requires oxygen level 7 * 10
17A/cm
3Below just powerless; (2). adopt " airtight " pulling technique, with heat-stable materials such as graphite, SiC, Mo melt, crucible and well heater and growing crystal have been shielded fork-like farm tool used in ancient China, increased the bath surface temperature, significantly reduced the melt thermal convection, cooperate the adjusting of other processing parameters such as crucible rotation, crystal rotating speed, argon flow amount and furnace pressure again, can reach the effect of falling oxygen and control oxygen, but the head oxygen level is difficult to reduction, also is difficult to prepare the hypoxemia monocrystalline; (3). the single crystal growing furnace externally-applied magnetic field, utilize the effect of lorentz's force to suppress the melt thermal convection, this is a good method of controlling oxygen level in the monocrystalline at present.This magnetic field has two kinds, and a kind of is CUSP magnetic field, and another kind is a transverse magnetic field, and is fairly obvious to the oxygen effect of falling of monocrystalline.Though domestic have use and research, also not in middle hypoxemia scope (4 * 10
17A/cm
3-7.0 * 10
17A/cm
3) in, the whole whole oxygen levels of monocrystalline are in target zone ± 0.5 * 10
17A/cm
3Technology of preparing.
Summary of the invention
Technical problem to be solved by this invention provides low-oxygen control method in a kind of czochralski silicon monocrystal, makes in middle hypoxemia scope (4 * 10
17A/cm
3-7.0 * 10
17A/cm
3) in, the whole whole oxygen levels of monocrystalline are in target zone ± 0.5 * 10
17A/cm
3In.
In order to solve the problems of the technologies described above, the present invention has adopted following technical proposals: under the transverse magnetic field condition, select specific initial magnetic field intensity, suitable change of magnetic field strength speed, specific crucible rotation and crystal rotating speed according to different oxygen level target zones.Initial magnetic field intensity is 300-2500GS, and not holding magneticstrength is 50-1500GS, and change of magnetic field strength speed is 1-10GS/min, the crucible rotation variation range is 0.1-10rpm, crystal rotation speed change scope is 10-30rpm, and the crystal pulling rate is 0.5-3mm/min, and argon flow amount is 2-7m
3/ hr, furnace pressure are 1-4kpa.
Since different crucible charge amounts (15kg-60kg), different single crystal diameter (φ 2 " φ 6 "), and the vertical oxygen level of the oxygen level of its monocrystalline head and monocrystalline distributes also different, so will determine processing condition as the case may be.Under the situation many in the crucible charge amount, that single crystal diameter big, the oxygen level requirement is low, initial magnetic field intensity will be higher.For example work as charge amount 〉=45KG, crystal diameter φ 6 ", requiring oxygen level is (5.5 * 10
17-4 * 10
17) a/cm
3The time, initial magnetic field intensity will be at 1300-2500GS, and crucible rotation is at 0.1-2rpm, and the crystal rotating speed is at 10-18rpm, argon flow amount 3-7m
3/ hr, furnace pressure 1-3kpa.Otherwise, diameter few in charge amount is thin, oxygen level is (5.5 * 10
17-7 * 10
17) a/cm
3The time, will adopt low initial magnetic field intensity, changes of magnetic field speed faster, crucible changes and also can suitably increase.
Adopt technique scheme, (the crucible charge amount is 15kg-60kg, and single crystal diameter is Ф 2 " Ф 6 " to make whole monocrystalline effectively.) oxygen level is three sections target zones (5.5 * 10
17A/cm
3-7.0 * 10
17A/cm
3, 5.0 * 10
17A/cm
3-6.5 * 10
17A/cm
3, 4.0 * 10
17A/cm
3-5.5 * 10
17A/cm
3) a certain section, and whole monocrystalline oxygen level deviation is ± 0.5 * 10
17A/cm
3, oxygen level ununiformity≤5% radially, the monocrystalline yield rate is more than 60%.
Embodiment
The processing condition that the present invention adopts are: initial magnetic field intensity is 300-2500GS, not holding magneticstrength is 50-1500GS, change of magnetic field strength speed is 1-10GS/min, the crucible rotation variation range is 0.1-10rpm, crystal rotation speed change scope is 10-30rpm, the crystal pulling rate is 0.5-3mm/min, and argon flow amount is 2-7m
3/ hr, furnace pressure are 1-4kpa.
For example, in a specific embodiment, require to draw oxygen level 5 * 10
17A/cm
3-6.5 * 10
17A/cm
3φ 4 in the scope " monocrystalline, adopting initial magnetic field intensity is 1300GS, and not holding magneticstrength is 100GS; the rate of change in magnetic field is 4GS/min, and crucible rotation is changed to 1-1.5rpm, and the crystal rotating speed is 15rpm; the crystal pulling rate is changed to 1.6-0.6mm/min, and argon flow amount is 3m
3/ hr, furnace pressure are 2kpa.Pull out monocrystalline after tested, the head oxygen level is 5.4 * 10
17A/cm
3, middle part oxygen level 5.6 * 10
17A/cm
3, afterbody oxygen level 5.6 * 10
17A/cm
3, radially the oxygen level ununiformity is 2.5%, the monocrystalline yield rate is 68.3%.
Claims (3)
1, low-oxygen control method in a kind of czochralski silicon monocrystal is characterized in that, adopts following processing condition:
Initial magnetic field intensity is 300 ~ 2500GS, and not holding magneticstrength is 50 ~ 1500GS, and change of magnetic field strength speed is 1 ~ 10GS/min, the crucible rotation variation range is 0.1 ~ 10rpm, crystal rotation speed change scope is 10 ~ 30rpm, and the crystal pulling rate is 0.5 ~ 3mm/min, and argon flow amount is 2 ~ 7m
3/ hr, furnace pressure are 1 ~ 4kpa.
2, low-oxygen control method in the czochralski silicon monocrystal according to claim 1 is characterized in that, described initial magnetic field intensity is 1300-2500GS, and crucible rotation is at 0.1-2rpm, and the crystal rotating speed is at 10-18rpm, argon flow amount 3-7m
3/ hr, furnace pressure 1-3kpa.
3, low-oxygen control method in the czochralski silicon monocrystal according to claim 1, it is characterized in that, described initial magnetic field intensity is 1300GS, not holding magneticstrength is 100GS, the rate of change in magnetic field is 4GS/min, and crucible rotation is changed to 1-1.5rpm, and the crystal rotating speed is 15rpm, the crystal pulling rate is changed to 1.6-0.6mm/min, and argon flow amount is 3m
3/ hr, furnace pressure are 2kpa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100235633A CN1332072C (en) | 2005-01-20 | 2005-01-20 | Low oxygen control method in czochralski silicon monocrystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100235633A CN1332072C (en) | 2005-01-20 | 2005-01-20 | Low oxygen control method in czochralski silicon monocrystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1807703A true CN1807703A (en) | 2006-07-26 |
| CN1332072C CN1332072C (en) | 2007-08-15 |
Family
ID=36839792
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100235633A Active CN1332072C (en) | 2005-01-20 | 2005-01-20 | Low oxygen control method in czochralski silicon monocrystal |
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| Country | Link |
|---|---|
| CN (1) | CN1332072C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102220632A (en) * | 2011-06-23 | 2011-10-19 | 英利能源（中国）有限公司 | Technical method of N-type Czochralski silicon monocrystal |
| CN104357901A (en) * | 2014-10-30 | 2015-02-18 | 内蒙古中环光伏材料有限公司 | Method for reducing oxygen donor content of Czochralski monocrystal |
| CN104389015A (en) * | 2014-11-13 | 2015-03-04 | 宁晋松宫电子材料有限公司 | Production technique capable of controlling single crystal black edge |
| CN105350070A (en) * | 2015-12-09 | 2016-02-24 | 天津市环欧半导体材料技术有限公司 | Method for controlling oxygen content of czochralski-method silicon single crystals by means of frequency conversion magnetic field |
| CN109415843A (en) * | 2016-06-28 | 2019-03-01 | 胜高股份有限公司 | The manufacturing method of monocrystalline silicon |
| CN112831836A (en) * | 2020-12-30 | 2021-05-25 | 上海新昇半导体科技有限公司 | Crystal pulling method and crystal pulling apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1019838B (en) * | 1989-03-07 | 1992-12-30 | 北京市长城催化剂厂 | Exhaust gas treatment device with noise elimination function |
| CN1233883C (en) * | 2003-10-15 | 2005-12-28 | 浙江大学 | Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field |
-
2005
- 2005-01-20 CN CNB2005100235633A patent/CN1332072C/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102220632A (en) * | 2011-06-23 | 2011-10-19 | 英利能源（中国）有限公司 | Technical method of N-type Czochralski silicon monocrystal |
| CN102220632B (en) * | 2011-06-23 | 2012-12-12 | 英利能源（中国）有限公司 | Technical method of N-type Czochralski silicon monocrystal |
| CN104357901A (en) * | 2014-10-30 | 2015-02-18 | 内蒙古中环光伏材料有限公司 | Method for reducing oxygen donor content of Czochralski monocrystal |
| CN104389015A (en) * | 2014-11-13 | 2015-03-04 | 宁晋松宫电子材料有限公司 | Production technique capable of controlling single crystal black edge |
| CN105350070A (en) * | 2015-12-09 | 2016-02-24 | 天津市环欧半导体材料技术有限公司 | Method for controlling oxygen content of czochralski-method silicon single crystals by means of frequency conversion magnetic field |
| CN109415843A (en) * | 2016-06-28 | 2019-03-01 | 胜高股份有限公司 | The manufacturing method of monocrystalline silicon |
| CN112831836A (en) * | 2020-12-30 | 2021-05-25 | 上海新昇半导体科技有限公司 | Crystal pulling method and crystal pulling apparatus |
| TWI767586B (en) * | 2020-12-30 | 2022-06-11 | 大陸商上海新昇半導體科技有限公司 | Crystal growth method and crystal growth apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1332072C (en) | 2007-08-15 |
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Address after: 201617 no.558, changta Road, Shihudang Town, Songjiang District, Shanghai Patentee after: Shanghai crystal silicon material Co., Ltd Address before: 201617 No. 500 South noble Road, Shanghai, Songjiang District Patentee before: SHANGHAI WAFER WORKS Corp. |
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