CN1233883C - Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field - Google Patents
Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field Download PDFInfo
- Publication number
- CN1233883C CN1233883C CN 200310108003 CN200310108003A CN1233883C CN 1233883 C CN1233883 C CN 1233883C CN 200310108003 CN200310108003 CN 200310108003 CN 200310108003 A CN200310108003 A CN 200310108003A CN 1233883 C CN1233883 C CN 1233883C
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- China
- Prior art keywords
- germanium
- growth
- silicon single
- magnetic field
- density
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 22
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000012010 growth Effects 0.000 claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 229920005591 polysilicon Polymers 0.000 claims abstract description 12
- 239000010453 quartz Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010257 thawing Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 12
- 239000007789 gas Substances 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 230000005764 inhibitory process Effects 0.000 abstract description 2
- 239000011800 void material Substances 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses a method for producing Czochralski silicon single crystals with low defect density under magnetic fields. The method comprises the procedures: polysilicon is put in a quartz crucible, high-purity germanium is mixed, temperature is raised to 1400 DEG C to 1450 DEG C at the magnetic field intensity of 100 to 10000G and under protective gas, the germanium is melted in melting polysilicon liquid, the doping density of germanium in single crystal silicon is from 1*10<10> to 1*10<21> cm<-3>, and silicon single crystals with low defect density are obtained through growth. The present invention produces Czochralski silicon single crystals under magnetic fields, the concentration of oxygen can be effectively controlled and lowered by adjusting magnetic field intensity, and germanium acts on point defects by doping trace germanium. Thereby, the present invention has the advantages of inhibition of the generation of primary microdefects, especially VOID defects, lowering of defect density, improved growth rate, lowered cost and growth of high-quality silicon single crystals.
Description
Technical field
The method of czochralski silicon monocrystal the present invention relates to grow.
Background technology
In order to reduce cost, the diameter of czochralski silicon monocrystalline that super large-scale integration is used is increasing, and along with the raising of technology, the characteristic line breadth of super large-scale integration diminishes again gradually, therefore, super large-scale integration is that diameter becomes greatly with the developing direction of silicon single-crystal, and defect size and density all diminish.Along with the increase of diameter of czochralski silicon monocrystalline, during crystal growth, crystal factors vary such as flow strengthens, and has directly influenced the major impurity oxygen of silicon crystal and the character of other microdefect.
The growing technology of czochralski silicon monocrystal is ripe, and for example, the method for Chinese patent CN66102558A and the disclosed growing silicon single crystal of CN85100295 just records crystal component, growth pattern, type of heating, a temperature control, pressure or the like condition." silicon materials Science and Technology " (Que Duanlin chief editor; press of Zhejiang University, 2000) in the book, report has under vacuum or protection gas condition; utilize the bank up the roots of seedlings crystalline substance, prepare czochralski silicon monocrystal by following bank up the roots of seedlings crystalline substance, shouldering, isometrical, ending, cooling or the like technological process.
Super large-scale integration mainly shows as with the primary defective of silicon materials (czochralski silicon monocrystal) at present: COP (crystal originated particles), FPD (flow pattern defects), LSTD (light scattering topography defects), LPD (light scatteringdefects) etc., these defectives have formed fatal influence to ultra-large micron unicircuit.In fact, when the size of individual defect reaches 1/2nd or three/for the moment of minimal characteristic live width, will cause the inefficacy of vlsi circuitry.
In order to remove the primary defective in the silicon single-crystal, the high-quality silicon chip of preparation super large-scale integration, following several approach is generally arranged: during (1) crystal growth, adjust crystal thermal field and crystalline growth velocity, the nearly complete silicon single-crystal of growth zero defect, but the crystalline growth velocity of this method is very low, and product efficiency is low.(2) when crystal growth, mix the nitrogen element, suppress the formation of defective; Because nitrogen is pentad and promotes oxygen precipitation, to the electric property existence influence of silicon single-crystal.(3) after being prepared into polished silicon slice, high temperature annealing can be removed the defective of nearly surface portion in argon gas or hydrogen, and this method has increased cost and technology, and has increased the possibility of metallic pollution.
Have the investigator to study the effect of heavily doped germanium in the silicon, the adding of mainly studying germanium is to the modulation of silicon energy gap and the raising of the anti-irradiation ability of silicon materials, and wherein the incorporation of germanium is generally greater than 1%.
Summary of the invention
The method that the purpose of this invention is to provide under a kind of magnetic field growth fabricating low-defect-density czochralski silicon monocrystal, eliminating or to reduce primary microdefect in the czochralski silicon monocrystal, can scale operation, and effectively improve the performance and the yield rate of super large-scale integration.
The method of growth fabricating low-defect-density czochralski silicon monocrystal of the present invention; comprise the thawing of polysilicon; plant seed crystal; shouldering, isometrical, ending, cooling whole process is characterized in that polysilicon is put into quartz crucible, and mix purity greater than 99.999% germanium; under 100-i0000G magneticstrength and shielding gas; temperature is raised to 1400 ℃～1450 ℃, germanium is fused in the polysilicon liquation, the doping content of germanium in silicon single crystal is 1 * 10
10-1 * 10
21Cm
-3, growth obtains the fabricating low-defect-density czochralski silicon monocrystal.
Among the present invention, used shielding gas can be an argon gas.The optimum doping concentration of germanium in silicon single crystal is 1 * 10
12～1 * 10
19Cm
-3, can effectively control and reduce the concentration of oxygen by adjusting magneticstrength, the high-quality silicon single crystal of growth trace germanium element doping.
The present invention adopts the czochralski silicon monocrystal of growing under magnetic field, utilize the doping of trace germanium, make germanium and point defect (from gap Siliciumatom, room) act on, thereby primary microdefect, the particularly generation of VOID defective in the inhibition silicon single-crystal, reduce defect concentration, be beneficial to the raising speed of growth, reduce cost, the silicon single-crystal of growing high-quality.Because the outermost electron number of element Ge is the same with element silicon, all is 4, can not influence the electric property of silicon materials.
Embodiment
Experiment uses the polysilicon of phosphorus doping as raw material, and Ge-doped concentration is 1 * 10
12-1 * 10
19Cm
-3, growing n-type 6 inches＜100〉silicon single-crystal, target resistivity is 0.001-1000 Ω .cm.Step is as follows: polysilicon is put into quartz crucible; the purity that adds 10-1000g is 99.9999% germanium; under 1000G magnetic field; under the argon shield; temperature is raised to 1400 ℃; when polysilicon melted, germanium fused in the polysilicon liquation, and growth obtains the high-quality silicon single crystal of trace germanium element doping.
Claims (2)
1. the magnetic field method of growth fabricating low-defect-density czochralski silicon monocrystal down; comprise the thawing of polysilicon; plant seed crystal; shouldering, isometrical, ending, cooling whole process is characterized in that polysilicon is put into quartz crucible, and mix purity greater than 99.999% germanium; under 100-10000G magneticstrength and shielding gas; temperature is raised to 1400 ℃～1450 ℃, germanium is fused in the polysilicon liquation, the doping content of germanium in silicon single crystal is 1 * 10
10-1 * 10
21Cm
-3, growth obtains the fabricating low-defect-density czochralski silicon monocrystal.
2. magnetic field according to claim 1 is the method for growth fabricating low-defect-density czochralski silicon monocrystal down, it is characterized in that the doping content of germanium in silicon single crystal is 1 * 10
12～1 * 10
19Cm
-3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310108003 CN1233883C (en) | 2003-10-15 | 2003-10-15 | Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310108003 CN1233883C (en) | 2003-10-15 | 2003-10-15 | Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1528956A CN1528956A (en) | 2004-09-15 |
| CN1233883C true CN1233883C (en) | 2005-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200310108003 Expired - Fee Related CN1233883C (en) | 2003-10-15 | 2003-10-15 | Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1332072C (en) * | 2005-01-20 | 2007-08-15 | 上海合晶硅材料有限公司 | Low oxygen control method in czochralski silicon monocrystal |
| ATE539182T1 (en) * | 2009-05-13 | 2012-01-15 | Siltronic Ag | METHOD AND DEVICE FOR GROWING A SILICON INDIVIDUAL CRYSTAL BY MELTING |
| CN102220633B (en) * | 2011-07-15 | 2012-11-07 | 西安华晶电子技术股份有限公司 | Production technology of semiconductor grade silicon single crystal |
| JP2015205793A (en) * | 2014-04-21 | 2015-11-19 | グローバルウェーハズ・ジャパン株式会社 | Method for drawing up single crystal |
| CN106498494A (en) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | A kind of thermal field of MEMS making silicon single crystal material and preparation method |
| CN111910248B (en) * | 2020-07-14 | 2022-02-18 | 江苏协鑫硅材料科技发展有限公司 | Ingot casting single crystal seed crystal, cast single crystal silicon ingot and preparation method thereof, cast single crystal silicon slice and preparation method thereof |
-
2003
- 2003-10-15 CN CN 200310108003 patent/CN1233883C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1528956A (en) | 2004-09-15 |
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Assignee: NINGBO SOLAR ELECTRIC POWER Co.,Ltd. Assignor: Zhejiang University Contract fulfillment period: 2008.7.14 to 2013.7.13 Contract record no.: 2008330000128 Denomination of invention: Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field Granted publication date: 20051228 License type: Exclusive license Record date: 20080730 |
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Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.7.14 TO 2013.7.13 Name of requester: NINGBO SOLAR ELECTRIC POWER CO., LTD. Effective date: 20080730 |
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Granted publication date: 20051228 |