CN1190527C - Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping - Google Patents
Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping Download PDFInfo
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- CN1190527C CN1190527C CNB021511268A CN02151126A CN1190527C CN 1190527 C CN1190527 C CN 1190527C CN B021511268 A CNB021511268 A CN B021511268A CN 02151126 A CN02151126 A CN 02151126A CN 1190527 C CN1190527 C CN 1190527C
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- Prior art keywords
- nitrogen
- silicon
- silicon single
- single crystal
- crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 18
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 19
- 229920005591 polysilicon Polymers 0.000 title claims description 18
- 238000002844 melting Methods 0.000 title abstract description 3
- 230000008018 melting Effects 0.000 title abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 230000012010 growth Effects 0.000 claims abstract description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 12
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- 239000000155 melt Substances 0.000 claims description 9
- 230000000802 nitrating effect Effects 0.000 claims description 6
- 238000010257 thawing Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a method for growing a micro nitrogen silicon single crystal by melting multicrystal silicon and doping nitrogen, which is characterized in that in the growth process of a silicon single crystal, when the multicrystal silicon is melted, high-purity nitrogen serves as protective gas, wherein the pressure of the high-purity nitrogen is from 5 to 200 torr, flow rate is from 1 to 200 l/min, and the leading time of the nitrogen is from 1 to 1000 minutes; after the multicrystal silicon is melted, argon protective gas is converted, until the growth of the silicon crystal is completed. The method of the present invention overcomes the difficulties that the nitrogen element concentration of common nitrogen protective gas for growing the silicon single crystal with the major diameter is too high and the concentration is not easy to control. Simultaneously, the present invention can effectively reduce the production cost of the silicon single crystals with major diameters, and is especially suitable for preparing the micro nitrogen silicon single crystal with diameters above 8 to 12 inches.
Description
Technical field
The present invention relates to the method that polysilicon melts nitrating czochralski growth micro nitrogen silicon single crystal.Be particularly useful for the preparation of major diameter micro nitrogen silicon single crystal more than 8～12 inches.
Background technology
Super large-scale integration forward characteristic line breadth diminishes gradually, and the direction that the silicon wafer diameter increases gradually develops.At present, 8 inches silicon single-crystal has reached more than 40% on the world market, and 12 inches silicon single-crystal have also dropped into commercial production.The prior art of this respect is ripe, too numerous to enumerate, and for example, the method for Chinese patent CN66102558A and the disclosed growing silicon single crystal of CN85100295A just records crystal component, growth pattern, type of heating, a temperature control, pressure or the like condition.Usually, when silicon crystal is grown, be to utilize high-purity argon gas as protection gas.From the thawing of polysilicon, plant seed crystal, whole processes such as shouldering, growth, ending, cooling all feed a certain amount of argon gas, with the growth of protection silicon single-crystal in crystal growing furnace.Silicon single-crystal also can be grown under nitrogen, but along with the increase of silicon single-crystal crystal diameter, the time of whole process also constantly prolongs, and utilizes common nitrogen protection gas growth large diameter silicon monocrystal, and the excessive concentration of nitrogen is wayward in its crystal.
Summary of the invention
The purpose of this invention is to provide the method that a kind of polysilicon melts nitrating czochralski growth micro nitrogen silicon single crystal.
Polysilicon of the present invention melts the method for nitrating czochralski growth micro nitrogen silicon single crystal, comprises the thawing of polysilicon, plants seed crystal; shouldering, growth, ending, cooling whole process; it is characterized in that in the silicon monocrystal growth process, when polysilicon melts, use high pure nitrogen as protection gas; the pressure of high pure nitrogen is 5～200Torr; flow is 1～200l/min, and nitrogen feeds 1～1000 minute time, after polysilicon melts; be converted into argon shield, finish until the silicon crystal growth.
The purity of above-mentioned nitrogen is between 99.999～99.9999%.
The inventive method, high pure nitrogen and the reaction of fused polysilicon surface, the nitrogen of trace will enter silicon liquid, finally enter silicon crystal.The time that nitrogen feeds when melting by the control polysilicon, nitrogen gas pressure and flow can be controlled the concentration of nitrogen in the silicon, guarantee the smooth growth of major diameter micro nitrogen silicon single crystal.
The present invention has overcome common nitrogen and has protected the nitrogen concentration of element of gas growth large diameter silicon monocrystal too high, the uppity difficulty of concentration, and the while can effectively be reduced the production cost of large diameter silicon monocrystal, is specially adapted to the preparation of micro nitrogen silicon single crystal more than 8～12 inches.
Embodiment
This example is made raw material with high purity polycrystalline silicon, and doping agent is a phosphorus, growing n-type 8 inches＜100〉silicon single-crystal, and target resistivity is 10～40 Ω .cm.Polysilicon is put into quartz crucible, under argon shield, temperature is raised to more than 1400 ℃.When polysilicon melted, as protection gas, the purity of nitrogen was 99.9999% with high pure nitrogen, and nitrogen gas pressure is 40Torr, and the flow of nitrogen is 80l/min, and the time is 30 minutes, and at this moment, the nitrogen element enters silicon melt.Then, be converted to the high-purity argon gas protection again, up to the silicon crystal growth ending.
Claims (2)
1. polysilicon melts the method for nitrating czochralski growth micro nitrogen silicon single crystal, comprises the thawing of polysilicon, plants seed crystal; shouldering, growth, ending, cooling whole process; it is characterized in that in the silicon monocrystal growth process, when polysilicon melts, use high pure nitrogen as protection gas; the pressure of high pure nitrogen is 5～200Torr; flow is 1～200l/min, and nitrogen feeds 1～1000 minute time, after polysilicon melts; be converted into argon shield, finish until the silicon crystal growth.
2. by the method for the described polysilicon thawing of claim 1 nitrating czochralski growth micro nitrogen silicon single crystal, the pressure that it is characterized in that high pure nitrogen is 40Torr, and flow is 80l/min, and the time that feeds nitrogen is 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021511268A CN1190527C (en) | 2002-12-02 | 2002-12-02 | Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021511268A CN1190527C (en) | 2002-12-02 | 2002-12-02 | Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1422989A CN1422989A (en) | 2003-06-11 |
| CN1190527C true CN1190527C (en) | 2005-02-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021511268A Expired - Lifetime CN1190527C (en) | 2002-12-02 | 2002-12-02 | Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1190527C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101671841B (en) * | 2008-09-09 | 2011-11-16 | 北京有色金属研究总院 | Method for preparing nitrogenous dopant for preparing czochralski silicon single crystal |
| CN101597788B (en) * | 2009-06-24 | 2011-12-07 | 浙江大学 | Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen |
| CN102560629A (en) * | 2012-03-10 | 2012-07-11 | 天津市环欧半导体材料技术有限公司 | Method for producing low-cost czochralski silicon |
| CN102817071A (en) * | 2012-06-20 | 2012-12-12 | 合肥景坤新能源有限公司 | Preparation technology of heat radiation resistant Czochralski polysilicon or monocrystalline silicon |
-
2002
- 2002-12-02 CN CNB021511268A patent/CN1190527C/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| CN1422989A (en) | 2003-06-11 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Ningbo Li Li Semiconductor Co., Ltd. Assignor: Zhejiang University Contract fulfillment period: 2008.12.10 to 2013.12.9 Contract record no.: 2009330001257 Denomination of invention: Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping Granted publication date: 20050223 License type: Exclusive license Record date: 20090602 |
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| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.12.10 TO 2013.12.9; CHANGE OF CONTRACT Name of requester: NINGBO LILI SEMICONDUCTOR CO., LTD. Effective date: 20090602 |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20050223 |