CN107287655A - The forming method of monocrystal silicon and wafer - Google Patents
The forming method of monocrystal silicon and wafer Download PDFInfo
- Publication number
- CN107287655A CN107287655A CN201610224914.5A CN201610224914A CN107287655A CN 107287655 A CN107287655 A CN 107287655A CN 201610224914 A CN201610224914 A CN 201610224914A CN 107287655 A CN107287655 A CN 107287655A
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- China
- Prior art keywords
- gas
- monocrystal silicon
- forming method
- silicon
- wafer
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
- C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
Abstract
The invention provides the forming method of a kind of monocrystal silicon and wafer, during using zone-melting process formation monocrystal silicon, the gas containing deuterium element is passed through to the silicon in melting zone, deuterium element is stored in the gap of monocrystal silicon, the content of reduction carbon and other impurities；After monocrystal silicon formation wafer, when forming device on wafer, deuterium element can be diffused out, and be combined with the dangling bonds of interface, relatively stable structure is formed, so as to increase resistivity of the device to hot carrier, leakage current is reduced, the performance and reliability of device is improved.
Description
Technical field
The present invention relates to zone-melting process field of single crystal growth and field of semiconductor manufacture, more particularly to a kind of monocrystalline silicon
The forming method of ingot and wafer.
Background technology
Monocrystalline silicon is widely used in field of semiconductor devices, therefore demand pole as a kind of semi-conducting material
Greatly, and using zone-melting process growing single-crystal silicon it is a kind of important method for obtaining monocrystalline silicon.
Zone-melting process is also known as FZ methods, i.e. floating zone method.It is one end one melting of generation using heat energy in fuel rod
Area, then welding single crystal seed.Regulation temperature makes melting zone slowly be moved to the other end of fuel rod, passes through
Whole fuel rod, grows into a monocrystalline, and crystal orientation is identical with seed crystal.Zone-melting process, which prepares silicon single crystal, to be had such as
Lower advantage：1st, without using crucible, single crystal growth process will not be polluted by crucible material；2nd, due to impurity point
Solidifying and evaporative effect, can grow the silicon single crystal of high resistivity.
The conventional method for making fuel rod local melting is：The fuel rod of column is fixed on chuck, a metal
Coil slowly moves through fuel rod along polycrystalline length direction, passes through high-power radio frequency in wire coil
Electric current, radio-frequency power electromagnetic field will cause vortex in fuel rod, Joule heat be produced, by adjusting coil work(
Rate, can cause fuel rod to be melted close to the part of coil, after coil is moved past, and melt crystallization is monocrystalline, its
Crystal orientation is identical with seed crystal.Another method for making fuel rod local melting is using focusing on electron beam.Entirely
Growing by zone melting device can be placed in vacuum system, or is had in the closed chamber of protective atmosphere.
Industrial quarters is generally applied to zone-melting process growing silicon single crystal using gas doping method.This doping techniques be by
Volatile PH4(n-type doping) or B2H6(p-type doping) gas directly blows after being diluted through argon gas (Ar)
Enter melting zone to be doped.Its advantage is that manufacturer need not store the polycrystalline silicon raw material rod of different resistivity again.
But, still inevitably introduce impurity, such as carbon during monocrystalline silicon is formed.In the molten of silicon
At a temperature of melting, carbon penetrates into lattice, and as monocrystalline silicon grows and cooled down from molten silicon, carbon remains in monocrystalline silicon
In, and then influence the performance and reliability of semiconductor devices being subsequently formed.
Therefore, how to reduce the content of carbon and other impurities in monocrystalline silicon, improve the performance of semiconductor devices with
Reliability is the technical problem that those skilled in the art need to solve.
The content of the invention
It is an object of the invention to provide the forming method of a kind of monocrystal silicon and wafer, impurity can be reduced
Formed, improve the performance of Subsequent semiconductor device.
The present invention provides a kind of forming method of monocrystal silicon, is passed through in the silicon of melting zone containing deuterium element
Gas.
Further, in the forming method of the monocrystal silicon, the gas is deuterium.
Further, in the forming method of the monocrystal silicon, the gas is deuterium and argon gas, hydrogen
Or the mixed gas of one or more gases in nitrogen.
Further, in the forming method of the monocrystal silicon, the gas is the mixing of deuterium and argon gas
Gas.
Further, in the forming method of the monocrystal silicon, the percentage of the deuterium and argon gas is
0.1%~99%.
Further, in the forming method of the monocrystal silicon, the gas also includes impurity gas, institute
Impurity gas is stated for PH3, AsH3 or B2H6.
Further, in the forming method of the monocrystal silicon, the gas containing deuterium element is passed through molten
In the silicon in tabetisol, carry out in the following manner：By being arranged in single-crystal manufacturing apparatus around fuel rod and with penetrating
The gas ejector that frequency heating coil is fixedly connected is sprayed into the silicon of melting zone.
Further, it is described to contain before melting zone is passed through in the forming method of the monocrystal silicon
The gas of deuterium element is mixed in gas mixing box.
Further, in the forming method of the monocrystal silicon, movement is arranged in single-crystal manufacturing apparatus
Radio-frequency coil causes melting zone to be moved to the other end from one end of fuel rod with gas ejector.
Further, in the forming method of the monocrystal silicon, repeat the above steps one or many, and
And it is not passed through gas when repeating.
Accordingly, the present invention also provides a kind of forming method of wafer, and original material is used as using monocrystal silicon
Wafer is formed, the monocrystal silicon is formed using the forming method of above-mentioned monocrystal silicon, contained in the wafer
Deuterium element.
Further, in the forming method of the wafer, including step：
The monocrystal silicon is carried out successively to cut thin, surface grinding, polishing, edge treated and cleaning treatment,
Form wafer.
Compared with prior art, the present invention has advantages below：It is right during using zone-melting process formation monocrystal silicon
Silicon in melting zone is passed through the gas containing deuterium element, deuterium element is stored in the gap of monocrystal silicon, drop
The content of low-carbon element and other impurities；After monocrystal silicon formation wafer, when forming device on wafer,
Deuterium element can be diffused out, and be combined with the dangling bonds of interface, form relatively stable structure, from
And increase resistivity of the device to hot carrier, leakage current is reduced, the performance and reliability of device is improved.
Brief description of the drawings
Fig. 1 is the flow chart of the forming method of monocrystal silicon in one embodiment of the invention.
Fig. 2 is the schematic diagram of single-crystal manufacturing apparatus formation monocrystal silicon in one embodiment of the invention.
Fig. 3 is the connection of gas ejector and gas mixing box in single-crystal manufacturing apparatus in one embodiment of the invention
Schematic diagram.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, to present disclosure
It is described further.Certainly the invention is not limited in the specific embodiment, those skilled in the art institute is ripe
The general replacement known is also covered by within the scope of the present invention.
Secondly, the present invention has carried out detailed statement using schematic diagram, when present example is described in detail, in order to
It is easy to explanation, schematic diagram, should not be to this restriction as the present invention not according to general ratio partial enlargement.
The present invention core concept be：During using zone-melting process formation monocrystal silicon, the silicon in melting zone is passed through
Gas containing deuterium element, makes deuterium element be stored in the gap of monocrystal silicon, reduces carbon and other are miscellaneous
The content of matter；After monocrystal silicon formation wafer, when forming device on wafer, deuterium element can spread
Go out, and be combined with the dangling bonds of interface, relatively stable structure is formed, so as to increase device to heat
The resistivity of carrier, reduces leakage current, improves the performance and reliability of device.
A kind of forming method of monocrystal silicon proposed by the present invention, is passed through in the silicon of melting zone containing deuterium element
Gas, specifically, the gas can be simple deuterium, or deuterium and argon gas, hydrogen or nitrogen
In one or more gases mixed gas, preferred one kind is combined as deuterium and argon gas in mixed gas
Mixed gas, the percentage of the deuterium and argon gas is 0.1%~99%, e.g. 50%, specifically, can
Determined, be not construed as limiting again with the requirement according to technique.
The gas also includes impurity gas, and the impurity gas is PH3、AsH3Or B2H6, with containing deuterium
It is passed directly into after the gas mixing of element in the silicon of melting zone and carries out N-type or p-type doping.
Specifically, refer to Fig. 1, it is the flow chart of the forming method of monocrystal silicon in one embodiment of the invention,
As shown in figure 1, in step S01, fuel rod is fixed on chuck, radio frequency heating coil is along raw material crystal bar
Length direction slowly move through the fuel rod, the raw material crystal bar one end produce melting zone,
Welding single crystal seed, the gas containing deuterium element is sprayed using gas ejector to the melting zone again.This reality
Apply in example, using the schematic diagram of single-crystal manufacturing apparatus formation monocrystal silicon as shown in Fig. 2 the monocrystalline is manufactured
Device includes gas ejector 100 and radio frequency heating coil 200, the gas ejector 100 and the radio frequency
The shape of heating coil 200 is identical, jointly around fuel rod 20, and the gas ejector 100 is penetrated with described
Frequency heating coil 200 is fixedly connected.The radio frequency heating coil 200 is produced in one end of the fuel rod 20
Melting zone 30, the gas ejector 100 sprays the gas containing deuterium element to the melting zone 30, cooling
Monocrystal rod 40 is formed afterwards, and crystal orientation is identical with seed crystal.
In step S02, the mobile radio frequency heating coil 200 and gas ejector 100 so that melting zone
30 are moved to the other end from one end of raw material crystal bar 20, ultimately form complete monocrystal rod 40, i.e. monocrystalline silicon
Ingot.
The gas ejector 100 includes a ring pipe, and inlet end is provided with the ring pipe, and
Several stomatas are offered on the ring pipe so that doping air-flow can more be evenly distributed in it is molten
Around tabetisol so that melting zone is greatly increased to the absorptivity of impurity gas, so as to improve gas phase doping silicon
The resistance homogeneity of monocrystalline, while having saved doped source.The single-crystal manufacturing apparatus also includes gas mixing box
And flow controller, its connection diagram as shown in figure 3, the gas mixing box 300 have cooling device,
And the gas outlet of the gas mixing box 300 is connected with the gas ejector 100, the mass flow control
Device 400 processed is connected with the air inlet of the gas mixing box 300, for controlling to be passed through the gas mixing box
300 gas, the single-crystal manufacturing apparatus includes multiple mass flow controllers 400, for controlling difference
Gas each lead into the gas mixing box 300 and mixed, two are only denoted in Fig. 3.Contain
The gas of deuterium element is passed through to gas mixing box 300 by mass flow controller 400 and carried out after combination cooling
Transmit again to the gas ejector 100, then spray to melting zone 30 and carry out growing brilliant doping.
The gas containing deuterium element is passed through in melting zone 30, can control to produce in the monocrystal silicon being subsequently formed
The bad defects such as the reunion of the raw point defect being brought together and carbon, reduce the generation of such defect, and
And deuterium element is stored in the gap of monocrystal silicon, the content of carbon and other impurities can be reduced, rear
Continuous to be formed after wafer, on wafer during making devices, deuterium element can be diffused out, and hanging with interface
Key is combined, and forms relatively stable structure, so as to increase resistivity of the device to hot carrier, is dropped
Low-leakage current, improves the performance and reliability of device.
Generally, solubility of most of impurity in coagulated silicon is less than the solubility in melting zone silicon,
Therefore, substantial amounts of impurity can be shifted by melting zone, reduces the impurity in the monocrystal rod formed after cooling
Quantity so that impurity is constantly assembled to the one end of raw material crystal bar away from monocrystal rod, eventually through the side of cutting
Formula removes the fuel rod containing a large amount of impurity, forms the monocrystal rod containing a small amount of impurity.In order to constantly reduce list
The content of impurity in crystal bar, can repeat the above steps one or many, therefore the method for the monocrystal silicon
Also include step S03：Repeat step S01 and S02 is one or many, and need not be passed through when repeating
Gas containing deuterium element, so as to constantly reduce the impurity content in monocrystal rod, its specific number of repetition root
Factually the process conditions on border are determined, are not limited herein.Afterwards, can be according to required brilliant diameter of a circle to shape
Into monocrystal silicon carry out round as a ball, the cylinder of formation rule, then to rule monocrystal silicon carry out making shape
Into wafer
In the another aspect of the present embodiment, it is also proposed that a kind of forming method of wafer, using monocrystal silicon conduct
Original material formation wafer, the monocrystal silicon is formed using the forming method of monocrystal silicon as described above,
The wafer foreign atom containing deuterium.
Specifically, the forming method of the wafer includes step：
The monocrystal silicon is carried out successively to cut thin, surface grinding, polishing, edge treated and cleaning treatment,
Form wafer.
Device can be subsequently formed on wafer, because deuterium element is stored in the gap of wafer, carbon is reduced
The content of element and other impurities, and deuterium element can diffuse out, and tied with the dangling bonds of interface
Close, form relatively stable structure, so as to increase resistivity of the device to hot carrier, reduce leakage current,
Improve the performance and reliability of device.
In summary, the present invention is provided monocrystal silicon and the forming method of wafer, list is formed using zone-melting process
During crystal silicon ingot, the gas containing deuterium element is passed through to the silicon in melting zone, deuterium element is stored in monocrystal silicon
Gap in, reduction carbon and other impurities content；After monocrystal silicon formation wafer, in wafer
During upper formation device, deuterium element can be diffused out, and be combined with the dangling bonds of interface, be formed more
Stable structure, so as to increase resistivity of the device to hot carrier, reduces leakage current, improves device
Performance and reliability.
Foregoing description is only the description to present pre-ferred embodiments, not to any limit of the scope of the invention
Calmly, the those of ordinary skill in field of the present invention does according to the disclosure above content any change, modification, belong to
In the protection domain of claims.
Claims (12)
1. a kind of forming method of monocrystal silicon, it utilizes zone-melting process formation monocrystal silicon, it is characterised in that
The gas containing deuterium element is passed through in the silicon of melting zone.
2. the forming method of monocrystal silicon as claimed in claim 1, it is characterised in that the gas is deuterium
Gas.
3. the forming method of monocrystal silicon as claimed in claim 1, it is characterised in that the gas is deuterium
The mixed gas of gas and one or more gases in argon gas, hydrogen or nitrogen.
4. the forming method of monocrystal silicon as claimed in claim 3, it is characterised in that the gas is deuterium
The mixed gas of gas and argon gas.
5. the forming method of monocrystal silicon as claimed in claim 4, it is characterised in that the deuterium and argon
The percentage of gas is 0.1%~99%.
6. such as the forming method of monocrystal silicon according to any one of claims 1 to 5, it is characterised in that institute
Stating gas also includes impurity gas, and the impurity gas is PH3、AsH3Or B2H6。
7. the forming method of monocrystal silicon as claimed in claim 6, it is characterised in that described to contain deuterium member
The gas of element is passed through in the silicon of melting zone, is carried out in the following manner：By being arranged at single-crystal manufacturing apparatus middle ring
Sprayed around fuel rod and with the gas ejector that radio frequency heating coil is fixedly connected into the silicon of melting zone.
8. the forming method of monocrystal silicon as claimed in claim 7, it is characterised in that be passed through melting zone
Before, the gas containing deuterium element is mixed in gas mixing box.
9. the forming method of monocrystal silicon as claimed in claim 7, it is characterised in that movement is arranged at list
Radio-frequency coil in brilliant manufacture device causes melting zone is moved to from one end of fuel rod another with gas ejector
End.
10. the forming method of monocrystal silicon as claimed in claim 9, it is characterised in that repeat above-mentioned step
It is rapid one or many, and it is not passed through gas when repeating.
11. a kind of forming method of wafer, original material formation wafer, its feature are used as using monocrystal silicon
It is, the monocrystal silicon uses the forming method such as monocrystal silicon according to any one of claims 1 to 10
Formed, deuterium element is contained in the wafer.
12. the forming method of wafer as claimed in claim 11, it is characterised in that including step：
The monocrystal silicon is carried out successively to cut thin, surface grinding, polishing, edge treated and cleaning treatment,
Form wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610224914.5A CN107287655A (en) | 2016-04-12 | 2016-04-12 | The forming method of monocrystal silicon and wafer |
| TW105126283A TWI613333B (en) | 2016-04-12 | 2016-08-17 | Method for forming monocrystalline silicon and wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610224914.5A CN107287655A (en) | 2016-04-12 | 2016-04-12 | The forming method of monocrystal silicon and wafer |
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| Publication Number | Publication Date |
|---|---|
| CN107287655A true CN107287655A (en) | 2017-10-24 |
Family
ID=60093641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610224914.5A Pending CN107287655A (en) | 2016-04-12 | 2016-04-12 | The forming method of monocrystal silicon and wafer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107287655A (en) |
| TW (1) | TWI613333B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112210818A (en) * | 2020-08-31 | 2021-01-12 | 北京理工大学 | Method for preparing single-crystal metal deuteride by movable zone melting |
| CN114808110A (en) * | 2022-05-20 | 2022-07-29 | 江苏鑫华半导体科技股份有限公司 | Device for detecting impurity of blocky polycrystalline silicon, application and detection method thereof |
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| CN102041548A (en) * | 2009-10-16 | 2011-05-04 | 英利集团有限公司 | Zone melting furnace for purifying crystalline silicon and method for purifying crystalline silicon |
| CN202072793U (en) * | 2010-12-23 | 2011-12-14 | 北京有色金属研究总院 | High-frequency heating coil for zone-melting gas phase doping |
| CN102486999A (en) * | 2010-12-01 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Forming method of grid oxidation layer |
| CN205115662U (en) * | 2015-10-19 | 2016-03-30 | 天津市环欧半导体材料技术有限公司 | Single crystal is mixed with coil of blowing to zone -melting gas |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333114C (en) * | 2006-04-21 | 2007-08-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing vapor doping zone-melted silicon single crystal |
| US8378384B2 (en) * | 2007-09-28 | 2013-02-19 | Infineon Technologies Ag | Wafer and method for producing a wafer |
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2016
- 2016-04-12 CN CN201610224914.5A patent/CN107287655A/en active Pending
- 2016-08-17 TW TW105126283A patent/TWI613333B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102041548A (en) * | 2009-10-16 | 2011-05-04 | 英利集团有限公司 | Zone melting furnace for purifying crystalline silicon and method for purifying crystalline silicon |
| CN102486999A (en) * | 2010-12-01 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Forming method of grid oxidation layer |
| CN202072793U (en) * | 2010-12-23 | 2011-12-14 | 北京有色金属研究总院 | High-frequency heating coil for zone-melting gas phase doping |
| CN205115662U (en) * | 2015-10-19 | 2016-03-30 | 天津市环欧半导体材料技术有限公司 | Single crystal is mixed with coil of blowing to zone -melting gas |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112210818A (en) * | 2020-08-31 | 2021-01-12 | 北京理工大学 | Method for preparing single-crystal metal deuteride by movable zone melting |
| CN112210818B (en) * | 2020-08-31 | 2021-07-20 | 北京理工大学 | Method for preparing single-crystal metal deuteride by movable zone melting |
| CN114808110A (en) * | 2022-05-20 | 2022-07-29 | 江苏鑫华半导体科技股份有限公司 | Device for detecting impurity of blocky polycrystalline silicon, application and detection method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201736647A (en) | 2017-10-16 |
| TWI613333B (en) | 2018-02-01 |
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