CN104313697A - Improved doping gas circuit for zone-melting gas-doped monocrystalline - Google Patents
Improved doping gas circuit for zone-melting gas-doped monocrystalline Download PDFInfo
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- CN104313697A CN104313697A CN201410653127.3A CN201410653127A CN104313697A CN 104313697 A CN104313697 A CN 104313697A CN 201410653127 A CN201410653127 A CN 201410653127A CN 104313697 A CN104313697 A CN 104313697A
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Abstract
The invention provides an improved doping gas circuit for zone-melting gas-doped monocrystalline. The main structure of the doping gas circuit pipeline is designed as a transverse H shape, wherein one end of the transverse H-shaped doping gas circuit is communicated with a shielding gas inlet and a doping gas inlet, and the other end of the transverse H-shaped doping gas circuit is communicated with a gas outlet and a discharge hole; the gas outlet is formed inside a hearth; flowmeters are arranged in the shielding gas inlet, the doping gas inlet and the gas outlet respectively; a pressure valve is arranged in the discharge hole. The novel doping gas circuit provided by the invention can improve the mixing effect of the doping gas in the gas circuit within a limited space, on one hand, the axial comprehensive homogeneity and repeatability of the gas-doped monocrystalline can be improved, and on the other hand, the shielding gas can be recycled, and the production cost can be reduced.
Description
Technical field
The invention study on floating zone silicon growing technology field, is specifically related to the doping gas circuit of a kind of improvement in the smelting furnace of monocrystalline silicon region.
Background technology
In zone-melted silicon single crystal preparation process, mix a certain amount of electrically active impurity and high-purity polycrystalline silicon raw material can be made the doped silicon monocrystalline with certain electrical properties.At present, the adulterating method of zone-melted silicon single crystal has polycrystalline sedimentation, silicon core doping method, solution to apply doping method, excellent hole doping method, neutron transmutation doping method (NTD) and gas phase doping method etc.Wherein, neutron transmutation doping method, namely the resistivity of NTD monocrystalline axially and radial homogeneity be best, the process-cycle is long simultaneously, and price is also very expensive.So Ge great producer considers the silicon single-crystal that gas phase doping legal system that Cost Problems just turns to low cost, resistivity evenness lower is standby, to such an extent as to 80% of current global all kinds of zone-melted silicon single crystal total amount is gas phase doping monocrystalline.
Because the electrical properties of single crystal silicon material is almost all very responsive to all impurity, and monocrystalline silicon growing process is proposed strict requirement to the uniform doping in axis and plane, therefore being very important to the control of doping process in doping process, is also the problem that those skilled in the art constantly study and improve to the control of doping process.Applicant has carried out large quantifier elimination to zone-melted silicon single crystal gas phase doping growth technique, have devised a whole set of rational gas phase doping growth technique, be the patent application of CN1455028, CN1763266, CN1865530, CN1865531, CN103114325A, CN103114326A comprising publication number, be incorporated herein by reference at this.But in above-mentioned research, do not relate to the research that doping gas circuit affects doping process.
Doping gas circuit is used for the protection gas and doping gas of determining flow to be conveyed in zone melting furnace after mixing; common gas path pipe generally without careful pipeline specifications and move towards design; after protection gas is mixed with doping gas; direct feeding burner hearth; and the mixing portion of doping gas circuit is generally positioned at the fixing space of zone melting furnace one; the size in space is restricted; general within 80cm × 95cm; therefore the distributed pole of gas in zone melting furnace is uneven, the gas produced mix the axial homogeneity of silicon single crystal and repeatability poor.
Summary of the invention
The invention is for solving the problem, and provide a kind of district of improvement to melt doping gas circuit that gas mixes monocrystalline, can make doping gas enter stokehold Homogeneous phase mixing with protection gas, improve gas and mix single crystalline uniform, improve doping efficiency in the limited space of zone melting furnace.
For solving the problems of the technologies described above; the technical scheme that the invention adopts is; doping gas path pipe Design of Main Structure is " work " font; described " work " font doping gas circuit one end connective protection gas inlet mouth, doping gas inlet mouth; the other end is communicated with air outlet and venting port; described air outlet enters burner hearth inside, and described protection gas inlet mouth, doping gas inlet mouth and air outlet are equipped with under meter, and described venting port is provided with pressure valve.
Wherein, described pressure valve can ensure that the gas entering burner hearth has stable concentration and pressure, reduces the disturbance into furnace gases.
Wherein, described protection gas is generally argon gas, and described doping gas can be one or more in phosphine (PH3), borine (B2H6).
Preferably, described doping gas inlet mouth is positioned at above described protection gas inlet mouth, and described air outlet is positioned at above described venting port.Flow due to shielding gas is general comparatively large, shielding gas pour in top by below in the duct and be positioned at the ducted doping gas in top mix time, there is larger Impulse and in pipeline turbulization, thus reinforcement mixed effect.
Further; described venting port is also communicated with outside accumulator unit via one section of vapor pipe; described vapor pipe central authorities are provided with gas-filtering device; protection gas is after pressure valve is discharged; through the Purification by filtration of filtration unit; enter accumulator unit, make shielding gas be able to recycle, improve resource utilization.
Further, the internal diameter of the pipeline of described " work " font doping gas circuit is 0.3-0.6cm.
Further; the flow range of described protection gas inlet mouth controls at 0-10L/min; the flow range of described doping gas inlet mouth controls at 0-0.5L/min, and the flow range of described air outlet controls at 0-150ml/min, and the regulation range of described exhaust port pressure controls at 0-20bar
The advantage that the invention has and positively effect are: the mixed effect that can improve impurity gas in gas circuit in limited space, and axial comprehensively homogeneity and the repeatability of mixing monocrystalline that can make to bring about the desired sensation on the one hand is improved; Shielding gas can be made to be able to recycle on the other hand, reduce production cost.
Accompanying drawing explanation
Fig. 1 is the structural representation that a kind of novel district melts that gas mixes the doping gas circuit of monocrystalline.
Fig. 2 is the test result of the axial resistivity of single crystal product article that embodiment 1 is produced.
Wherein, 1-doping gas inlet mouth; 2-protects gas inlet mouth; 3-air outlet; 4-venting port; 5-pressure valve; 6-gas-filtering device; 7-accumulator unit.
Embodiment
Below in conjunction with accompanying drawing, the invention is further described.
A kind of novel district of the invention melts gas and mixes the structural representation of the doping gas circuit of monocrystalline as shown in Figure 2.Doping gas and protection gas are respectively by adulterating gas inlet mouth (1) and protect gas inlet mouth (2) to enter pipeline, and portion is mixed in the duct, and mixed gas enters burner hearth inside by air outlet (3); Pressure valve (5) is provided with in venting port (4), when pressure in the burner hearth exceedes threshold value, pressure valve (5) is opened, redundant protection gas and the trace doped gas that may contain are discharged through venting port (4), realize the control to gaseous tension in burner hearth; Described venting port (4) is also communicated with outside accumulator unit (7) via one section of vapor pipe, described vapor pipe central authorities are provided with gas-filtering device (6), protection gas is after pressure valve is discharged, through the Purification by filtration of filtration unit, sponge the trace doped gas that may contain, enter accumulator unit, make shielding gas be able to recycle, improve resource utilization; Described doping gas inlet mouth (1), protection gas inlet mouth (2) and air outlet (3) are equipped with under meter (not shown), can realize the accurate control to gas flow; The internal diameter of the pipeline of described doping gas circuit is 0.3-0.6cm.
In order to further illustrate the effect of the invention, the single crystal product article before and after zone melting furnace doping gas circuit transformation in volume production is detected.Use novel doping gas circuit as shown in Figure 2, draw 4 inches of gas and mix monocrystalline, productive target resistivity mixes monocrystalline at the gas of 30-45 Ω cm.In normal productive process, Ar airshed controls as 2L/min; The flow of doping gas (phosphine) is 260ml/min; The flow that gas mixture enters stove is 100ml/min; Unnecessary gas discharges gas circuit by venting port, and venting port control pressure is 3bar.By the implementing monitoring to airline pressure, ensure that the pressure into furnace gases.
Adopt the doping gas circuit of above-mentioned improvement carried out some identical type and batch gas mix the production of monocrystalline, target resistivity 30-45 Ω cm, four point probe CRES-box is used to carry out the test of a radial diameter 19 to the resistivity of single crystal product article, test result as shown in Figure 2, the resistivity fluctuation range of monocrystalline is only between 30-50 Ω cm, resistivity fluctuation range is little, and overall resistivity homogeneity is good.
Claims (4)
1. the doping gas circuit that gas mixes monocrystalline is melted in the district improved; described doping gas path pipe Design of Main Structure is " work " font; described " work " font doping gas circuit one end connective protection gas inlet mouth, doping gas inlet mouth; the other end is communicated with air outlet and venting port; described air outlet enters burner hearth inside; described protection gas inlet mouth, doping gas inlet mouth and air outlet are equipped with under meter, and described venting port is provided with pressure valve.
2. the doping gas circuit that gas mixes monocrystalline is melted in the district of a kind of improvement according to claim 1, it is characterized in that: described doping gas inlet mouth is positioned at above described protection gas inlet mouth, and described air outlet is positioned at above described venting port.
3. the doping gas circuit that gas mixes monocrystalline is melted in the district of a kind of improvement according to claim 1, it is characterized in that: the internal diameter of the pipeline of described " work " font doping gas circuit is 0.3-0.6cm.
4. the doping gas circuit that gas mixes monocrystalline is melted in the district of a kind of improvement according to claim 1; it is characterized in that: the flow range of described protection gas inlet mouth controls at 0-10L/min; the flow range of described doping gas inlet mouth controls at 0-0.5L/min; the flow range of described air outlet controls at 0-150ml/min, and the regulation range of described exhaust port pressure controls at 0-20bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410653127.3A CN104313697A (en) | 2014-11-17 | 2014-11-17 | Improved doping gas circuit for zone-melting gas-doped monocrystalline |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410653127.3A CN104313697A (en) | 2014-11-17 | 2014-11-17 | Improved doping gas circuit for zone-melting gas-doped monocrystalline |
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| CN104313697A true CN104313697A (en) | 2015-01-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410653127.3A Pending CN104313697A (en) | 2014-11-17 | 2014-11-17 | Improved doping gas circuit for zone-melting gas-doped monocrystalline |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109707998A (en) * | 2017-10-25 | 2019-05-03 | 有研半导体材料有限公司 | A kind of molten gas in area mixes the air supply system of monocrystalline silicon |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865531A (en) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing vapor doping zone-melted silicon single crystal |
| CN103866377A (en) * | 2012-12-14 | 2014-06-18 | 有研半导体材料股份有限公司 | Gas phase mixing system device and method used for obtaining zone-melting silicon single crystal with wide specific resistance range |
| CN104328484A (en) * | 2014-11-17 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | Novel doping gas path for zone-melting gas-doped single crystal |
-
2014
- 2014-11-17 CN CN201410653127.3A patent/CN104313697A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1865531A (en) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | Process for preparing vapor doping zone-melted silicon single crystal |
| CN103866377A (en) * | 2012-12-14 | 2014-06-18 | 有研半导体材料股份有限公司 | Gas phase mixing system device and method used for obtaining zone-melting silicon single crystal with wide specific resistance range |
| CN104328484A (en) * | 2014-11-17 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | Novel doping gas path for zone-melting gas-doped single crystal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109707998A (en) * | 2017-10-25 | 2019-05-03 | 有研半导体材料有限公司 | A kind of molten gas in area mixes the air supply system of monocrystalline silicon |
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Application publication date: 20150128 |