CN109371471B - Growth method of double-layer epitaxial wafer and double-layer epitaxial wafer - Google Patents
Growth method of double-layer epitaxial wafer and double-layer epitaxial wafer Download PDFInfo
- Publication number
- CN109371471B CN109371471B CN201811451021.XA CN201811451021A CN109371471B CN 109371471 B CN109371471 B CN 109371471B CN 201811451021 A CN201811451021 A CN 201811451021A CN 109371471 B CN109371471 B CN 109371471B
- Authority
- CN
- China
- Prior art keywords
- layer
- growth
- gas
- double
- buffer layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
Abstract
The invention discloses a growth method of a double-layer epitaxial wafer and the double-layer epitaxial wafer, wherein the growth method comprises the following steps: growing a buffer layer on a substrate, and then growing a pressure-resistant layer on the buffer layer; and after the buffer layer grows and before the pressure-resistant layer grows, purging for 120s or more and 300s or less. The invention researches the problem of wide transition region of the pressure-resistant layer of the double-layer epitaxial wafer, and the reason is that after the buffer layer grows, high-concentration doping gas used for growing the layer, such as phosphine, borane and the like, still remains in a gas pipeline of an epitaxial machine table, so that the transition region of the pressure-resistant layer growing at low concentration is wide.
Description
Technical Field
The invention relates to a growth method of a double-layer epitaxial wafer and the double-layer epitaxial wafer.
Background
The epitaxial wafer is an essential process in chip manufacturing, especially in the manufacturing process of power devices. With the increasing market demand for low power consumption and high withstand voltage of power devices, the resistivity of silicon substrates used in epitaxial processes tends to be lower and lower, and the low substrate resistivity is generally realized by overweight doping of phosphorus or boron due to solid solubility. However, the use of an ultra-heavy phosphorus or boron doped substrate introduces a series of process challenges, such as self-doping of the ultra-heavy substrate itself during the high temperature epitaxial process and lattice mismatch between the substrate and the epitaxy. The autodoping can be controlled by reasonably selecting proper epitaxial temperature, and the lattice mismatch can be solved by firstly growing an epitaxial layer with low resistivity on the substrate as a buffer layer and then growing a voltage-resistant layer required by the power device on the epitaxial layer, namely by using a double-layer epitaxial wafer. However, the double-layer epitaxial wafer is characterized in that the second layer of epitaxy, namely the transition region of the voltage-resistant layer, which grows on the double-layer epitaxial wafer is too wide (the epitaxial layer can be divided into a flat region and a transition region, and the calculation method of the transition region refers to SEMI standard), and the curve is shown to be "collapsed" in the depth of 8-10 microns, as shown in fig. 1, reference numeral 11 is the flat region of the voltage-resistant layer required by the device, reference numeral 12 is the transition region of the voltage-resistant layer required by the device, reference numeral 13 is the first layer of epitaxy, namely the buffer layer, and reference numeral 14 is the substrate which is super-. As can be seen from fig. 1, the transition region 15 of the voltage-proof layer prepared by the original method is wider than that of reference numeral 12, i.e. the flat region, i.e. the effective epitaxial thickness, is reduced. The wide transition region 15 of the voltage-withstanding layer means that the effective epitaxial thickness of the layer is reduced, which does not meet the breakdown voltage requirement required by the power device.
Disclosure of Invention
The present invention provides a method for growing a double-layer epitaxial wafer and a double-layer epitaxial wafer.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
a growth method of a double-layer epitaxial wafer comprises the steps of growing a buffer layer on a substrate, and then growing a pressure-resistant layer on the buffer layer; and after the buffer layer grows and before the pressure-resistant layer grows, purging for 120s or more and 300s or less.
According to one embodiment of the invention, the purging after the growth of the buffer layer and before the growth of the pressure-resistant layer is specifically: the method comprises the steps of arranging a growth cavity, wherein the growth cavity is used for growth of a buffer layer and a pressure-resistant layer, using main hydrogen to blow the growth cavity, arranging a mixing pipeline for introducing doping injection gas, using the doping injection gas for doping the buffer layer and the pressure-resistant layer, and blowing the mixing pipeline by using the doping injection gas.
According to one embodiment of the invention, during the growth of the buffer layer and the pressure-resistant layer, main hydrogen and silicon trichloro-monohydrogen are used for reaction, and doping injection gas is used for doping.
According to one embodiment of the invention, the substrate is baked for 20-40 s before the buffer layer is grown.
According to an embodiment of the present invention, the doping injection gas is prepared during the baking so that the flow rate of the doping injection gas is stable.
According to one embodiment of the present invention, the method for preparing the doping injection gas comprises: the doping gas source was diluted with hydrogen using dilution.
According to an embodiment of the invention, the hydrogen for dilution is hydrogen, and when baking and buffer layer growth are carried out, the flow rate of the hydrogen for dilution is 7L/min-12L/min, and when purging and pressure-resistant layer growth are carried out after buffer layer growth, the flow rate of the hydrogen for dilution is 4L/min-8L/min.
According to one embodiment of the present invention, the dopant gas source is a phosphane or a borane.
According to one embodiment of the invention, during baking, the growth chamber is filled with main hydrogen.
According to one embodiment of the invention, trichlorosilane is prepared during purging after the baking and the growth of the buffer layer and before the growth of the pressure-resistant layer, so that the flow of trichlorosilane is stable.
According to one embodiment of the invention, the method for preparing trichlorosilane is to gasify liquid trichlorosilane into gaseous trichlorosilane.
According to one embodiment of the invention, the flow rate of the trichlorosilane is 12 g/min to 18 g/min.
According to one embodiment of the invention, the pressure-resistant layer is purged after growth, the purging time is 4-8 s, and the purging method comprises the following specific steps: the growth chamber is purged with main hydrogen.
According to one embodiment of the invention, the main hydrogen is hydrogen and the flow rate is 50 l/min to 70 l/min.
According to one embodiment of the invention, the temperature during baking, the temperature during buffer layer growth, the temperature during purging after buffer layer growth, the temperature during pressure resistance layer growth and the temperature during purging after pressure resistance layer growth are all 1100-1130 ℃.
A double-layer epitaxial wafer is prepared by the method and comprises a substrate, a buffer layer and a pressure-resistant layer, wherein the buffer layer grows on the substrate, the pressure-resistant layer grows on the buffer layer, the resistivity of the buffer layer is smaller than 0.1 ohm-cm and larger than or equal to 0.05 ohm-cm, and the resistivity of the pressure-resistant layer is larger than 3 ohm-cm and smaller than or equal to 20 ohm-cm.
According to one embodiment of the invention, the substrate is overweight doped, and for phosphorus doping, the substrate has a resistivity of 0.0007 ohm-cm to 0.0013 ohm-cm; for boron doping, the substrate has a resistivity of 0.0005 ohm-cm to 0.001 ohm-cm.
The invention researches the problem of wide transition region of the pressure-resistant layer of the double-layer epitaxial wafer, and the reason is that after the buffer layer grows, high-concentration doping gas used for growing the layer, such as phosphine, borane and the like, still remains in a gas pipeline of an epitaxial machine table, so that the transition region of the pressure-resistant layer growing at low concentration is wide.
The main hydrogen is used as carrier gas and reaction gas, and comprises the steps of removing a natural oxide layer as the reaction gas in the baking step, taking the reaction gas as the reaction gas to participate in reduction reaction and carrier gas in vapor deposition, namely carrying the rest of the reaction gas into a cavity and taking the reaction gas as purging gas in purging. The meaning of the carrier gas is that the trichlorosilane and the doping injection gas with small flow are carried into the growth cavity body for reaction. Too low hydrogen amount does not play the role of removing the natural oxide layer and purging, and too high hydrogen amount can affect the growth rate of epitaxy and increase the cost. Hydrogen is always introduced into the growth cavity, so that the growth cavity can be kept clean, polycrystalline silicon deposited on the cavity wall of the growth cavity is prevented from falling off, namely coating falls off, and the phenomenon that the falling polycrystalline silicon influences the epitaxial growth quality is avoided; the hydrogen is introduced into the growth cavity, so that the growth cavity can generate positive pressure to the second tail gas channel, and the gas in the second tail gas channel is prevented from flowing back to the growth cavity.
Trichlorosilane is the main reaction gas, and the setting amount mainly considers the growth rate, namely 4 microns/minute, and the intermediate value which is as close to the use range of the flow control meter as possible. In the baking before the growth of the buffer layer and the blowing process after the growth of the buffer layer and before the growth of the pressure-resistant layer, trichlorosilane is introduced because trichlorosilane is gasified from liquid to gas, a process is needed, and the introduction of trichlorosilane in advance is beneficial to the stability and control of flow, so that the gas pipeline is preheated, and the growth of the buffer layer and the growth of the pressure-resistant layer are better controlled.
The setting of the flow rate of the diluting hydrogen gas mainly affects the value of the epitaxial resistivity, and the set value is as close as possible to the middle of the maximum measurement range of the mass flow controller. Meanwhile, the flow setting of the phosphane or the borane can also influence the value of the epitaxial resistivity, the flow is determined according to the specifications of the resistivities of the buffer layer and the pressure resistance layer which are required to be prepared, the phosphane or the borane is diluted by hydrogen through dilution, namely the mixed gas of the phosphane or the borane and the hydrogen for dilution is doped injection gas, the flow of the doped injection gas directly determines the value of the epitaxial resistivity, and the flow is determined according to the specifications of the resistivities of the buffer layer and the pressure resistance layer which are required to be prepared. The flow rate of hydrogen and phosphine or borane for dilution is controlled, the concentration of hydrogen and phosphine or borane for dilution can be determined, and the value of epitaxial resistivity can be controlled by controlling the flow rate of the doping implantation gas. Therefore, in the baking before the growth of the buffer layer and the blowing process after the growth of the buffer layer and before the growth of the pressure-resistant layer, the doping injection gas is introduced, so that the flow of the doping injection gas in the growth of the buffer layer and the growth of the pressure-resistant layer is stable, the gas pipeline is preheated, and the control of the growth of the buffer layer and the growth of the pressure-resistant layer is facilitated.
Drawings
FIG. 1 is a graph of the resistivity profile of the background art;
FIG. 2 is a structural diagram of a bilayer epitaxial wafer;
FIG. 3 is an apparatus for preparing a double-layered epitaxial wafer;
fig. 4 is a graph of the resistivity of a double layer epitaxial wafer after use of the present invention.
Detailed Description
The invention is described in detail below with reference to the attached drawing figures:
example 1
Fig. 2 shows a structural diagram of a double-layer epitaxial wafer to be prepared in this embodiment, a buffer layer 9 grows on a substrate 8, a voltage-withstanding layer 10 grows on the buffer layer 9, the substrate 8 is a substrate used in common epitaxial growth, and is an overweight dopant, specifically: for phosphorus doping, the resistivity of the substrate 8 is 0.0007 ohm cm to 0.0013 ohm cm; for boron doping, the resistivity of the substrate 8 is between 0.0005 ohm-cm and 0.001 ohm-cm. Others are not particularly limited.
As shown in fig. 3, the apparatus for preparing a double-layered epitaxial wafer includes: the device comprises a doping gas source pipeline 1, a first mass flow controller 2, a dilution gas source pipeline 3, a second mass flow controller 4, a mixing pipeline 5, a third mass flow controller 6, a main hydrogen pipeline 16, a fourth mass flow controller 17, an independent pipeline 19, a fifth mass flow controller 28, a first tail gas channel 20, a second tail gas channel 21, a first control valve 18, a second control valve 22 and a growth cavity 7, wherein the doping gas source pipeline 1 and the dilution gas source pipeline 3 are respectively communicated with the mixing pipeline 5, the gas flow in the doping gas source pipeline 1 is controlled by the first mass flow controller 2, the gas flow in the dilution gas source pipeline 3 is controlled by the second mass flow controller 4, the mixing pipeline 5 is communicated with the growth cavity 7, the growth cavity 7 is used for growing a buffer layer 9 and a pressure-resistant layer 10, the gas flow flowing through the mixing pipeline 5 is controlled by the third mass flow controller 6, the gas flow of the main hydrogen pipeline 16 is controlled by a fourth mass flow controller 17, the main hydrogen pipeline 16 is communicated with the growth cavity 7, the independent pipeline 19 is communicated with the growth cavity 7, the gas flow of the independent pipeline 19 is controlled by a fifth mass flow controller 28, the inlet of the first tail gas channel 20 is arranged between the junction of the mixing pipeline 5 and the independent pipeline 19 and the growth cavity 7, the inlet of the second tail gas channel 21 is communicated with the growth cavity 7, the outlet of the first tail gas channel 20 and the outlet of the second tail gas channel 21 are both connected with the tail gas treatment equipment of the machine, the first control valve 18 is arranged at the inlet of the first tail gas channel 20, the first control valve 18 controls the gas in the mixing pipeline 5 and the independent pipeline 19 to be communicated with the first tail gas channel 20 or the growth cavity 7, the first control valve 18 can be a three-way electromagnetic valve, the second control valve 22 is arranged at the inlet or the outlet of the second tail gas channel 21, the second control valve 22 is normally open, that is, there is gas circulation in the growth chamber 7, that is, during the production process, the second tail gas channel 21 is normally open, and the second control valve 22 is closed, which is generally used when the growth chamber 7 is subjected to pressure maintaining and leakage detection. The input end of the independent pipeline 19 is provided with gasification equipment, the inlet of the independent pipeline 19 is provided with a trichlorosilane supply source, the independent pipeline 19 is used for inputting trichlorosilane, gaseous trichlorosilane is introduced into the growth cavity 7, and liquid trichlorosilane is gasified by a trichlorosilane supply source 24 arranged at the inlet of the independent pipeline 19 through the gasification equipment 23 and then enters the independent pipeline 19. The doping gas source pipe 1 is provided at its inlet with a doping gas source supply source 25, the diluting gas source pipe 3 is provided at its inlet with a diluting hydrogen gas supply source 26, the diluting hydrogen gas supply source 26 may be a hydrogen generation station, the main hydrogen pipe 16 is provided at its inlet with a main hydrogen gas supply source 27, and the main hydrogen gas supply source 27 may be a hydrogen generation station.
The growth method comprises the following steps:
placing a substrate 8 in a growth cavity 7, baking the substrate 8, wherein the substrate 8 is subjected to overweight doping, and for phosphorus doping, the resistivity of the substrate 8 is 0.0007 ohm cm; for boron doping, the resistivity of the substrate 8 is 0.0005 ohm-cm; the baking time is 20s and the temperature is 1100 ℃, the baking is to remove the native oxide layer and some possible contamination on the substrate 10 by using main hydrogen at high temperature, the baking time is short and cannot meet the requirement, and the too long baking time affects the productivity and the cost and also produces the substrate doping out-diffusion. If not otherwise required, the bake may be at the same temperature as the epitaxial deposition. Introducing main hydrogen to keep the growth cavity 7 clean; preparing trichlorosilane, and preheating an independent pipeline 19; preparing doping injection gas, and preheating a doping gas source pipeline 1 and a mixing pipeline 5;
the method comprises the following steps: the main hydrogen is led from the main hydrogen line 16 to the growth chamber 7 and is discharged from the second off-gas channel 21, with a main hydrogen flow of 50 litres per minute. Meanwhile, trichlorosilane is led in from the independent pipeline 19, and the flow rate is 12 g/min; meanwhile, 7 liters/minute of hydrogen for dilution is introduced from a dilution gas source pipeline 3; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the phosphane or borane is diluted by hydrogen in the mixing pipeline 5 through dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas are determined according to the specifications of the resistivity of the buffer layer 9 and the pressure-resistant layer 10 which are prepared as required; the first control valve 18 is controlled such that the doping injection gas and the trichlorosilane are discharged from the first off-gas channel 20 before passing to the growth chamber 7. The injection gas and the trichloromonohydrosilicon are introduced in the step for the purpose of stable flow, so that the growth of the buffer layer 9 in the next step is ensured.
Growing a buffer layer 9 on the substrate 8, wherein the resistivity is 0.05 ohm-cm, the growth uses a trichlorosilane vapor deposition method, the temperature is 1100 ℃, main hydrogen and trichlorosilane react, and doping is carried out by doping injection gas;
the method comprises the following steps: trichlorosilane is led into the growth cavity 7 from the independent pipeline 19, and the flow rate is 12 g/min; meanwhile, introducing main hydrogen gas into the growth cavity 7 from the main hydrogen pipeline 16 for 50 liters/minute; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 7 liters/minute; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the phosphane or borane is diluted by hydrogen in the mixing pipeline 5 through dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas are determined according to the specification of the resistivity of the buffer layer 9 to be prepared; the first control valve 18 is controlled so that the dopant implantation gas and the silicon monohydrogen trichloride pass into the growth chamber 7. The total time of this step is determined according to the specification of the thickness of the buffer layer 9 to be prepared; the main hydrogen and the trichloro-monohydrogen silicon are used for growing the monocrystalline silicon, and the buffer layer 9 is doped by doping injection gas so as to have resistivity;
purging, namely, purging the growth cavity 7 by using main hydrogen, purging the doped gas source pipeline 1 by using phosphine or borane, purging the mixing pipeline 5 by using doped injection gas, and preparing trichlorosilane simultaneously so that the flow of the trichlorosilane is stable;
the method comprises the following steps: the device comprises a blowing growth cavity 7, a doping gas source pipeline 1 and a mixing pipeline 5, wherein the blowing growth cavity 7 uses main hydrogen, the blowing doping gas source pipeline 1 uses phosphine or borane, the blowing mixing pipeline 5 uses mixed gas of hydrogen and phosphine or borane to dope injection gas, the blowing time is 120s, and the temperature is 1100 ℃; specifically, the method comprises the following steps: introducing hydrogen into the growth cavity 7 from the main hydrogen pipeline 16 for 50 liters/minute for purging, and discharging the main hydrogen from the second tail gas channel 21; meanwhile, trichlorosilane is led in from the independent pipeline 19, and the flow rate is 12 g/min; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 4 liters/minute; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the doped gas source pipeline 1 is purged, the phosphane or borane enters the mixing pipeline 5 and is mixed with hydrogen for dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas of the purged mixing pipeline 5 are determined according to the specifications of the resistivity of the buffer layer 9 and the pressure-resistant layer 10 which are prepared as required; controlling a first control valve 18, and discharging the doped injection gas and the trichlorosilane from a first tail gas channel 20; the injection gas and the trichloro-monohydrogen silicon are introduced in the step for the purpose of stable flow, so that the growth of the next pressure-resistant layer 10 is ensured.
Step four, growing a pressure-resistant layer 10 on the buffer layer 9, wherein the resistivity is 3.1 ohm-cm, and the growth uses a trichlorosilane vapor deposition method, and the temperature is 1100 ℃; reacting main hydrogen with the silicon trichloro-monohydrogen, and doping by using doping injection gas;
the method comprises the following steps: trichlorosilane is led into the growth cavity 7 from the independent pipeline 19, and the flow rate is 12 g/min; meanwhile, 50 liters/minute of hydrogen is introduced into the growth cavity 7 from the main hydrogen pipeline 16; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 4 liters/minute; introducing phosphine or borane from the doped gas source pipeline 1, enabling the phosphine or borane to enter a mixing pipeline 5 and be mixed with hydrogen for dilution to form doped injection gas, wherein the flow rates of the phosphine or borane and the doped injection gas are determined according to the specification of the resistivity of the pressure-resistant layer 10 to be prepared; the total time of the step is determined according to the specification of the thickness of the pressure-resistant layer 10 to be prepared; controlling the first control valve 18 to make the doping injection gas and the silicon hydrogen trichloride enter the growth cavity 7; the main hydrogen and the trichloro-monohydrogen silicon are used for growing the monocrystalline silicon, and the doped injection gas is used for doping the pressure-resistant layer 10 so as to have resistivity;
and step five, purging, wherein the temperature is 1100 ℃, main hydrogen is introduced from a main hydrogen pipeline 16 for 50 liters/minute, the growth cavity 7 is purged, phosphine or borane, doping injection amount, trichlorosilane or hydrogen for dilution are not required to be introduced, and the total time of the step is 4 s.
The steps and parameters of this embodiment are shown in table 1, where the values are set according to the thickness and resistivity of the buffer layer 9 and the pressure-resistant layer 10, and by using a standard formula in the art, the cavity means that main hydrogen, trichlorosilane, and dopant injection gas are all introduced into the growth cavity to react, the tail gas means that the main hydrogen and trichlorosilane are discharged after passing through the growth cavity, and the dopant injection gas is discharged after passing through the mixing pipeline without entering the growth cavity:
TABLE 1
Example 2
Fig. 2 is a structural diagram of a double-layer epitaxial wafer to be prepared in this embodiment, the used equipment is the same as in embodiment 1, the steps of this embodiment are basically the same as in embodiment 1, except that the design of parameters is different, and the method includes the following steps:
placing a substrate 8 in a growth cavity 7, baking the substrate 8, wherein the substrate 8 is subjected to overweight doping, and for phosphorus doping, the resistivity of the substrate 8 is 0.0013 ohm-cm; for boron doping, the resistivity of the substrate 8 is 0.001 ohm-cm; the baking time is 40s and the temperature is 1130 ℃, the baking is to remove the native oxide layer and some possible contamination on the substrate 10 by using the main hydrogen at high temperature, the baking time is short and cannot meet the requirement, the long baking time affects the productivity and the cost, the substrate doping out-diffusion is generated, and the main hydrogen is discharged from the second tail gas channel 21. If not otherwise required, the bake may be at the same temperature as the epitaxial deposition. The main hydrogen is led from the main hydrogen line 16 to the growth chamber 7 and is discharged from the second off-gas channel 21, with a main hydrogen flow of 70 litres per minute. Meanwhile, trichlorosilane is led in from the independent pipeline 19, and the flow rate is 18 g/min; meanwhile, introducing 12 liters/minute of hydrogen for dilution from a dilution gas source pipeline 3; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the phosphane or borane is diluted by hydrogen in the mixing pipeline 5 through dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas are determined according to the specifications of the resistivity of the buffer layer 9 and the pressure-resistant layer 10 which are prepared as required; the first control valve 18 is controlled such that the doping injection gas and the trichlorosilane are discharged from the first off-gas channel 20 before passing to the growth chamber 7. The injection gas and the trichloromonohydrogen silicon are introduced in the step for the purpose of stable flow, so that the growth of the buffer layer 11 in the next step is ensured.
Growing a buffer layer 9 on the substrate 8, wherein the resistivity is 0.08 ohm-cm, the growth uses a trichlorosilane vapor deposition method, the temperature is 1130 ℃, trichlorosilane is introduced into the growth cavity 7 from the independent pipeline 19, and the flow rate is 18 g/min; meanwhile, introducing main hydrogen gas from the main hydrogen pipeline 16 to the growth cavity 7 for 70 liters/minute; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 12 liters/minute; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the phosphane or borane is diluted by hydrogen in the mixing pipeline 5 through dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas are determined according to the specification of the resistivity of the buffer layer 9 to be prepared; the first control valve 18 is controlled so that the dopant implantation gas and the silicon monohydrogen trichloride pass into the growth chamber 7. The total time of the step is determined according to the thickness specification of the buffer layer 9 to be prepared; the main hydrogen and the trichloro-monohydrogen silicon are used for growing the monocrystalline silicon, and the buffer layer 9 is doped by doping injection gas so as to have resistivity;
purging, wherein purging comprises purging a growth cavity 7, a doped gas source pipeline 1 and a mixed pipeline 5, main hydrogen is used for purging the growth cavity 7, phosphane or borane is used for purging the doped gas source pipeline 1, and a mixed gas of hydrogen and phosphane or borane is used for purging the mixed pipeline 5 to dope an injection gas, wherein the purging time is 300s, and the temperature is 1130 ℃; specifically, the method comprises the following steps: introducing hydrogen gas into the growth cavity 7 from the main hydrogen pipeline 16 for 70 liters/minute purging, and discharging the main hydrogen gas from the second tail gas channel 21; meanwhile, trichlorosilane is led in from the independent pipeline 19, and the flow rate is 18 g/min; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 8 liters/minute; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the doped gas source pipeline 1 is purged, the phosphane or borane enters the mixing pipeline 5 and is mixed with hydrogen for dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas of the purged mixing pipeline 5 are determined according to the specifications of the resistivity of the buffer layer 9 and the pressure-resistant layer 10 which are prepared as required; controlling a first control valve 18, and discharging the doped injection gas and the trichlorosilane from a first tail gas channel 20; the injection gas and the trichloro-monohydrogen silicon are introduced in the step for the purpose of stable flow, so that the growth of the next pressure-resistant layer 10 is ensured.
Step four, growing a pressure-resistant layer 10 on the buffer layer 9, wherein the resistivity is 5 ohm-cm, and the growth uses a trichlorosilane vapor deposition method, and the temperature is 1130 ℃; trichlorosilane is led into the growth cavity 7 from the independent pipeline 19, and the flow rate is 18 g/min; meanwhile, 70 liters/minute of hydrogen is introduced into the growth cavity 7 from the main hydrogen pipeline 16; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 8 liters/minute; introducing phosphine or borane from the doped gas source pipeline 1, enabling the phosphine or borane to enter a mixing pipeline 5 and be mixed with hydrogen for dilution to form doped injection gas, wherein the flow rates of the phosphine or borane and the doped injection gas are determined according to the specification of the resistivity of the pressure-resistant layer 10 to be prepared; the total time of the step is determined according to the thickness specification of the pressure-resistant layer 10 to be prepared; controlling the first control valve 18 to make the doping injection gas and the silicon hydrogen trichloride enter the growth cavity 7; the main hydrogen and the trichloro-monohydrogen silicon are used for growing the monocrystalline silicon, and the doped injection gas is used for doping the pressure-resistant layer 10 so as to have resistivity;
and step five, purging, wherein the temperature is 1130 ℃, main hydrogen is introduced from a main hydrogen pipeline 16 for 70 liters/minute, the growth cavity 7 is purged, phosphine or borane, doping injection amount, trichlorosilane or hydrogen for dilution are not required to be introduced, and the total time of the step is 8 s.
The steps and parameters of this embodiment are shown in table 2, where ×) indicates that corresponding values are set according to the thickness and resistivity of different buffer layers 9 and pressure-resistant layers 10 by using a standard formula in the field, the meaning of the cavity is that main hydrogen, trichlorosilane, and dopant injection gas are all introduced into the growth cavity to react, the meaning of the tail gas is that main hydrogen and trichlorosilane are discharged after passing through the growth cavity, and the dopant injection gas is discharged after passing through the mixing pipeline without entering the growth cavity:
TABLE 2
Example 3
Fig. 2 is a structural diagram of a double-layer epitaxial wafer to be prepared in this embodiment, the used equipment is the same as in embodiment 1, the steps of this embodiment are basically the same as in embodiment 1, except that the design of parameters is different, and the method includes the following steps:
placing a substrate 8 in a growth cavity 7, baking the substrate 8, wherein the substrate 8 is subjected to overweight doping, and for phosphorus doping, the resistivity of the substrate 8 is 0.0012 ohm-cm; for boron doping, the resistivity of the substrate 8 is 0.0008 ohm-cm; the baking time is 30s and the temperature is 1120 ℃, the baking is aimed at removing a natural oxide layer and some possible contamination on the substrate 10 at a high temperature by using main hydrogen, the baking time is short and cannot meet the requirement, the long baking time influences the productivity and the cost, the substrate doping outdiffusion is generated, and the main hydrogen is discharged from the second tail gas channel 21. If not otherwise required, the bake may be at the same temperature as the epitaxial deposition. The main hydrogen is led from the main hydrogen line 16 to the growth chamber 7 and is discharged from the second off-gas channel 21, with a main hydrogen flow of 60 litres per minute. Meanwhile, trichlorosilane is led in from the independent pipeline 19, and the flow rate is 16 g/min; meanwhile, 10 liters/minute of hydrogen for dilution is introduced from a dilution gas source pipeline 3; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the phosphane or borane is diluted by hydrogen in the mixing pipeline 5 through dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas are determined according to the specifications of the resistivity of the buffer layer 9 and the pressure-resistant layer 10 which are prepared as required; the first control valve 18 is controlled such that the doping injection gas and the trichlorosilane are discharged from the first off-gas channel 20 before passing to the growth chamber 7. The injection gas and the trichloromonohydrogen silicon are introduced in the step for the purpose of stable flow, so that the growth of the buffer layer 11 in the next step is ensured.
Growing a buffer layer 9 on the substrate 8, wherein the resistivity is 0.099 ohm/cm, the growth uses a trichlorosilane vapor deposition method, the temperature is 1120 ℃, trichlorosilane is introduced into the growth cavity 7 from the independent pipeline 19, and the flow rate is 16 g/min; meanwhile, main hydrogen is introduced into the growth cavity 7 from the main hydrogen pipeline 16 for 60 liters/minute; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 10 liters/minute; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the phosphane or borane is diluted by hydrogen in the mixing pipeline 5 through dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas are determined according to the specification of the resistivity of the buffer layer 9 to be prepared; the first control valve 18 is controlled so that the dopant implantation gas and the silicon monohydrogen trichloride pass into the growth chamber 7. The total time of the step is determined according to the thickness specification of the buffer layer 9 to be prepared; the main hydrogen and the trichloro-monohydrogen silicon are used for growing the monocrystalline silicon, and the buffer layer 9 is doped by doping injection gas so as to have resistivity;
purging, wherein purging comprises purging the growth cavity 7, the doped gas source pipeline 1 and the mixed pipeline 5, main hydrogen is used for purging the growth cavity 7, phosphane or borane is used for purging the doped gas source pipeline 1, and the mixed gas of hydrogen and phosphane or borane is used for purging the mixed pipeline 5 to dope the injection gas, wherein the purging time is 140s, and the temperature is 1120 ℃; specifically, the method comprises the following steps: introducing hydrogen into the growth cavity 7 from the main hydrogen pipeline 16 for 60 liters/minute purging, and discharging the main hydrogen from the second tail gas channel 21; meanwhile, trichlorosilane is led in from the independent pipeline 19, and the flow rate is 16 g/min; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 6 liters/minute; meanwhile, phosphane or borane is introduced from the doped gas source pipeline 1, the doped gas source pipeline 1 is purged, the phosphane or borane enters the mixing pipeline 5 and is mixed with hydrogen for dilution to form doped injection gas, and the flow rates of the phosphane or borane and the doped injection gas of the purged mixing pipeline 5 are determined according to the specifications of the resistivity of the buffer layer 9 and the pressure-resistant layer 10 which are prepared as required; controlling a first control valve 18, and discharging the doped injection gas and the trichlorosilane from a first tail gas channel 20; the injection gas and the trichloro-monohydrogen silicon are introduced in the step for the purpose of stable flow, so that the growth of the next pressure-resistant layer 10 is ensured.
Step four, growing a pressure-resistant layer 10 with the resistivity of 20 ohm-cm on the buffer layer 9, wherein the growth uses a trichlorosilane vapor deposition method, and the temperature is 1120 ℃; trichlorosilane is led into the growth cavity 7 from the independent pipeline 19, and the flow rate is 16 g/min; meanwhile, introducing hydrogen gas into the growth cavity 7 from the main hydrogen pipeline 16 for 60 liters/minute; meanwhile, hydrogen for dilution is introduced from a dilution gas source pipeline 3, and the flow rate is 6 liters/minute; introducing phosphine or borane from the doped gas source pipeline 1, enabling the phosphine or borane to enter a mixing pipeline 5 and be mixed with hydrogen for dilution to form doped injection gas, wherein the flow rates of the phosphine or borane and the doped injection gas are determined according to the specification of the resistivity of the pressure-resistant layer 10 to be prepared; the total time of the step is determined according to the thickness specification of the pressure-resistant layer 10 to be prepared; controlling the first control valve 18 to make the doping injection gas and the silicon hydrogen trichloride enter the growth cavity 7; the main hydrogen and the trichloro-monohydrogen silicon are used for growing the monocrystalline silicon, and the doped injection gas is used for doping the pressure-resistant layer 10 so as to have resistivity;
and step five, purging, wherein the temperature is 1120 ℃, main hydrogen is introduced from the main hydrogen pipeline 16 for 60 liters/minute, the growth cavity 7 is purged, phosphine or borane, doping injection amount, trichlorosilane or hydrogen for dilution are not required to be introduced, and the total time of the step is 5 s.
The steps and parameters of this embodiment are shown in table 3, where ×, the thickness and resistivity of the buffer layer 9 and the pressure-resistant layer 10 are set according to standard formulas in the art, the meaning of the cavity is that the main hydrogen, the trichlorosilane, and the doping injection gas are all introduced into the growth cavity to react, the meaning of the tail gas is that the main hydrogen and the trichlorosilane are discharged after passing through the growth cavity, and the doping injection gas is discharged after passing through the mixing pipeline without entering the growth cavity:
TABLE 3
The double-layer epitaxial wafer prepared by the method of the invention uses the epitaxial extension probe to monitor the width of the transition region of the voltage-resisting layer, as shown in fig. 4, after the blowing time is more than 120 seconds after the growth of the lengthened buffer layer, the depth distribution of the epitaxial extension resistors of the buffer layer 9 and the voltage-resisting layer 10 is consistent with the design requirement of the device, and the problems of wide width and collapse of the transition region in the blowing time of 45 seconds are solved.
The embodiments of the present invention are merely illustrative, and not restrictive, of the scope of the claims, and other substantially equivalent alternatives may occur to those skilled in the art and are within the scope of the present invention.
Claims (16)
1. A growth method of a double-layer epitaxial wafer is characterized in that a buffer layer grows on a substrate, and then a pressure-resistant layer grows on the buffer layer; after the growth of the buffer layer and before the growth of the pressure-resistant layer, purging for 120s to 300s,
the purging after the growth of the buffer layer and before the growth of the pressure-resistant layer is specifically as follows: the method comprises the steps of arranging a growth cavity, wherein the growth cavity is used for growth of a buffer layer and a pressure-resistant layer, using main hydrogen to blow the growth cavity, arranging a mixing pipeline for introducing doping injection gas, using the doping injection gas for doping the buffer layer and the pressure-resistant layer, blowing the mixing pipeline by using the doping injection gas, enabling the resistivity of the buffer layer to be less than 0.1 ohm-cm and more than or equal to 0.05 ohm-cm, and enabling the resistivity of the pressure-resistant layer to be more than 3 ohm-cm and less than or equal to 20 ohm-cm.
2. The method of claim 1, wherein the main hydrogen and the silicon-trichlorosilane are reacted and doped with a doping implantation gas during the buffer layer growth and the pressure-resistant layer growth.
3. The method for growing a double-layer epitaxial wafer as claimed in claim 2, wherein the substrate is baked for 20s to 40s before the buffer layer is grown.
4. The method for growing a double-layered epitaxial wafer as claimed in claim 3, wherein the baking is performed by preparing a dopant implantation gas so that the flow rate of the dopant implantation gas is stabilized.
5. The method for growing a double-layer epitaxial wafer as claimed in claim 4, wherein the doping implantation gas is prepared by: the doping gas source was diluted with hydrogen using dilution.
6. The method for growing a double-layer epitaxial wafer according to claim 5, wherein the hydrogen gas for dilution is a hydrogen gas, and when baking and buffer layer growth are performed, the flow rate of the hydrogen gas for dilution is 7 l/min to 12 l/min, and when purging and pressure-resistant layer growth are performed after buffer layer growth, the flow rate of the hydrogen gas for dilution is 4 l/min to 8 l/min.
7. The method for growing a double-layer epitaxial wafer according to claim 5, wherein the doping gas source is phosphane or borane.
8. The method for growing a double-layered epitaxial wafer as claimed in claim 3, wherein the growth chamber is filled with main hydrogen gas during the baking.
9. The growth method of the double-layer epitaxial wafer according to claim 3, characterized in that trichlorosilane is prepared during purging after the baking and buffer layer grows and before the pressure-resistant layer grows, so that the flow of trichlorosilane is stable.
10. The method for growing the double-layer epitaxial wafer according to claim 9, wherein the method for preparing trichlorosilane is a method for gasifying liquid trichlorosilane into gaseous trichlorosilane.
11. The method for growing the double-layer epitaxial wafer according to claim 9 or 10, wherein the flow rate of the trichlorosilane is 12 g/min to 18 g/min.
12. The growth method of the double-layer epitaxial wafer as claimed in claim 8, wherein the pressure-resistant layer is purged after growth for 4-8 s, and the purging method comprises the following specific steps: the growth chamber is purged with main hydrogen.
13. The method for growing a double-layered epitaxial wafer according to claim 12, wherein the main hydrogen is hydrogen and the flow rate is 50 l/min to 70 l/min.
14. The method for growing a double-layer epitaxial wafer according to claim 12, wherein the temperatures at the time of baking, at the time of growing the buffer layer, at the time of purging after growing the buffer layer, at the time of growing the pressure-resistant layer and at the time of purging after growing the pressure-resistant layer are all 1100 ℃ to 1130 ℃.
15. A double-layered epitaxial wafer produced by the method according to any one of claims 1 to 14, comprising a substrate, a buffer layer grown on the substrate, and a voltage-proof layer grown on the buffer layer, wherein the buffer layer has a resistivity of less than 0.1 ohm-cm and 0.05 ohm-cm or more, and the voltage-proof layer has a resistivity of 3 ohm-cm or more and 20 ohm-cm or less.
16. The double-layered epitaxial wafer of claim 15 wherein the substrate is heavily doped, and for phosphorus doping, the substrate has a resistivity of 0.0007 ohm-cm to 0.0013 ohm-cm; for boron doping, the substrate has a resistivity of 0.0005 ohm-cm to 0.001 ohm-cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811451021.XA CN109371471B (en) | 2018-11-30 | 2018-11-30 | Growth method of double-layer epitaxial wafer and double-layer epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811451021.XA CN109371471B (en) | 2018-11-30 | 2018-11-30 | Growth method of double-layer epitaxial wafer and double-layer epitaxial wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109371471A CN109371471A (en) | 2019-02-22 |
| CN109371471B true CN109371471B (en) | 2021-03-16 |
Family
ID=65375527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811451021.XA Active CN109371471B (en) | 2018-11-30 | 2018-11-30 | Growth method of double-layer epitaxial wafer and double-layer epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109371471B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349841B (en) * | 2019-07-18 | 2021-04-09 | 中国电子科技集团公司第四十六研究所 | Preparation method of double-layer structure silicon epitaxial wafer |
| CN111415864A (en) * | 2020-03-18 | 2020-07-14 | 上海晶盟硅材料有限公司 | Super-heavy red phosphorus doped substrate epitaxy method |
| CN117766378A (en) * | 2023-12-22 | 2024-03-26 | 上海领矽半导体有限公司 | Preparation method of silicon epitaxial material for low-capacitance TVS |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1953204A (en) * | 2005-10-18 | 2007-04-25 | 国际整流器公司 | Trench igbt for highly capacitive loads |
| CN102386067A (en) * | 2010-08-31 | 2012-03-21 | 中国科学院上海微系统与信息技术研究所 | Epitaxial growth method for effectively restraining self-doping effect |
| CN103820849A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Technology for producing 12-inch monocrystalline silicon epitaxial wafers through pressure reduction |
| CN104851784A (en) * | 2015-05-29 | 2015-08-19 | 中国电子科技集团公司第四十六研究所 | Method for growing high-resistance thick layer silicon epitaxy on 6-inch heavily As-doped silicon substrate |
| CN104878445A (en) * | 2015-06-15 | 2015-09-02 | 国网智能电网研究院 | Preparation method of low-dosage concentration silicon carbide epitaxial material |
| CN105575772A (en) * | 2015-12-25 | 2016-05-11 | 河北普兴电子科技股份有限公司 | Preparation method of epitaxial wafer for FRD |
| CN106653570A (en) * | 2016-12-21 | 2017-05-10 | 南京国盛电子有限公司 | Heavily doped substrate inverted high resistance IC epitaxial wafer preparation method |
| CN106757324A (en) * | 2016-12-26 | 2017-05-31 | 南京国盛电子有限公司 | A kind of manufacture method of silicon epitaxial wafer |
-
2018
- 2018-11-30 CN CN201811451021.XA patent/CN109371471B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1953204A (en) * | 2005-10-18 | 2007-04-25 | 国际整流器公司 | Trench igbt for highly capacitive loads |
| CN102386067A (en) * | 2010-08-31 | 2012-03-21 | 中国科学院上海微系统与信息技术研究所 | Epitaxial growth method for effectively restraining self-doping effect |
| CN103820849A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Technology for producing 12-inch monocrystalline silicon epitaxial wafers through pressure reduction |
| CN104851784A (en) * | 2015-05-29 | 2015-08-19 | 中国电子科技集团公司第四十六研究所 | Method for growing high-resistance thick layer silicon epitaxy on 6-inch heavily As-doped silicon substrate |
| CN104878445A (en) * | 2015-06-15 | 2015-09-02 | 国网智能电网研究院 | Preparation method of low-dosage concentration silicon carbide epitaxial material |
| CN105575772A (en) * | 2015-12-25 | 2016-05-11 | 河北普兴电子科技股份有限公司 | Preparation method of epitaxial wafer for FRD |
| CN106653570A (en) * | 2016-12-21 | 2017-05-10 | 南京国盛电子有限公司 | Heavily doped substrate inverted high resistance IC epitaxial wafer preparation method |
| CN106757324A (en) * | 2016-12-26 | 2017-05-31 | 南京国盛电子有限公司 | A kind of manufacture method of silicon epitaxial wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109371471A (en) | 2019-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109371471B (en) | Growth method of double-layer epitaxial wafer and double-layer epitaxial wafer | |
| KR100692989B1 (en) | Semiconductor wafer and vapor growth apparatus | |
| EP0606737B1 (en) | Process and apparatus for growing a silicon epitaxial layer, with a control of the mass flows of the reactive gases | |
| CN106757324B (en) | A kind of manufacturing method of silicon epitaxial wafer | |
| CN104319235B (en) | A kind of manufacture method of fast recovery diode silicon epitaxial wafer | |
| CN104282535A (en) | Method for improving electrical resistivity evenness of P-type silicon epitaxial wafer for CCD | |
| CN103820849B (en) | A kind of technique of the production 12 cun of silicon single crystal epitaxial wafers that reduce pressure | |
| CN103541001A (en) | Preparation method for improving electrical resistivity and thickness consistency of epitaxial slice | |
| CN115094521B (en) | Boron diffusion reaction system and process method thereof | |
| CN107871660B (en) | A kind of crystal silicon solar energy battery emitter phosphorus doping control method | |
| CN102453958A (en) | Method for reducing epitaxy auto-doping effect | |
| CN103603048B (en) | A kind of chemical vapor depsotition equipment for producing silicon carbide epitaxial wafer | |
| CN109004063B (en) | Thermal oxidation method of crystal silicon solar cell | |
| CN110034011A (en) | A kind of voltage-controlled method and system processed in source suitable for low pressure diffusion furnace | |
| CN214327969U (en) | Silicon carbide epitaxial growth equipment and air source conveying device thereof | |
| CN102456551A (en) | Epitaxial growth method | |
| CN100477294C (en) | Method for concurrently forming silicon wafer suede and PN junction during solar cell manufacture | |
| CN104711675A (en) | Phosphorus, arsenic and antimony co-doped N-type heavily-doped Czochralski silicon single crystal and silicon epitaxial wafer thereof | |
| CN115627456A (en) | Method and reactor for improving deposition quality and deposition rate uniformity of silicon carbide | |
| CN105671631B (en) | Method for cleaning back surface of 200mm-300mm epitaxial equipment base in situ | |
| CN105463577A (en) | Method for producing group iii nitride crystal, and apparatus for producing the same | |
| CN1265434C (en) | Method for preparing p type crystal film | |
| CN117587507B (en) | Method and device for improving doping uniformity of silicon carbide epitaxial wafer | |
| CN218666407U (en) | Air inlet system for supplying multiple reaction chambers by same air source | |
| CN220079255U (en) | Epitaxial growth system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Chen Haibo Inventor after: Chen Jiangang Inventor before: Chen Haibo |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |