CN109371471A - The growing method and two-layer epitaxial piece of two-layer epitaxial piece - Google Patents
The growing method and two-layer epitaxial piece of two-layer epitaxial piece Download PDFInfo
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- CN109371471A CN109371471A CN201811451021.XA CN201811451021A CN109371471A CN 109371471 A CN109371471 A CN 109371471A CN 201811451021 A CN201811451021 A CN 201811451021A CN 109371471 A CN109371471 A CN 109371471A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
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Abstract
The invention discloses a kind of growing method of two-layer epitaxial piece and two-layer epitaxial piece, growing methods are as follows: then grown buffer layer on substrate grows Withstand voltage layer on the buffer layer；It after buffer growth, before Withstand voltage layer growth, is purged, the time of purging is more than or equal to 120s and is less than or equal to 300s.The wide problem of the Withstand voltage layer transition region of present invention research two-layer epitaxial piece, the reason is that after the completion of buffer growth, this layer can be still remained in the gas piping of epitaxy machine platform grows the high-concentration dopant gas used, such as phosphine, borine, transition region so as to cause the Withstand voltage layer grown in low concentration is wide, the present invention is changed to 30~45s of standard purge time to be more than or equal to 120s and is less than or equal to 300s, can solve this problem.
Description
Technical field
The present invention relates to a kind of growing method of two-layer epitaxial piece and two-layer epitaxial pieces.
Background technique
Epitaxial wafer is essential in one of technique in chip manufacturing, especially power device manufacturing process.With
Demand of the market to power device low-power consumption, high voltage is more and more vigorous, and the silicon substrate resistivity that epitaxy technique uses has more next
Lower trend, due to solid solubility, low resistance substrate rate is generally realized by overweight p-doped or boron.However overweight p-doped
Or boron substrate use again bring series of process challenge, such as it is overweight mix substrate itself in extension elevated temperature processes from
Doping and substrate and the lattice mismatch of extension etc..Auto-dope can be managed by reasonable selection epitaxial temperature appropriate, and brilliant
Lattice mismatch can be by first growing the epitaxial layer of one layer of low-resistivity as buffer layer on substrate, then the growth power on the layer
The Withstand voltage layer that device needs solves, that is, uses two-layer epitaxial piece.But two-layer epitaxial piece is in the second layer extension, also of growth
It is that wide (epitaxial layer can be divided into flat region and transition region, and the calculation method of transition region is marked referring to SEMI for the transition region of Withstand voltage layer
It is quasi-), curve is shown as at 8-10 microns of depth compared with " collapsing ", as shown in Figure 1, appended drawing reference 11 is the flat of the Withstand voltage layer of requirement on devices
Smooth area, appended drawing reference 12 are the transition region of the Withstand voltage layer of requirement on devices, and appended drawing reference 13 is first layer extension, namely buffers
Layer, appended drawing reference 14 are the overweight substrate mixed.It will be seen from figure 1 that the transition region 15 of the Withstand voltage layer of original method preparation is more attached
The width of icon note 12, that is, flat region, that is, effective epitaxial thickness reduce.15 width of transition region of Withstand voltage layer is also this means that the layer
Effective epitaxial thickness reduce, do not meet power device requirement breakdown voltage requirement.
Summary of the invention
The present invention is in order to solve the above technical problems, provide the growing method and two-layer epitaxial piece of a kind of two-layer epitaxial piece.
In order to achieve the above object, the invention is realized by the following technical scheme:
A kind of growing method of two-layer epitaxial piece, grown buffer layer, then grows Withstand voltage layer on the buffer layer on substrate；
It after buffer growth, before Withstand voltage layer growth, is purged, the time of purging is more than or equal to 120s and is less than or equal to 300s.
An embodiment according to the present invention, the purging after buffer growth, before Withstand voltage layer growth are specific
Be: setting growth chamber, growth chamber are used for the growth of buffer layer and Withstand voltage layer, use main hydrogen purge growth chamber, setting
Mixed pipe line is used for the doping of buffer layer and Withstand voltage layer, is infused using doping for being passed through doping injection gas, doping injection gas
Enter gas purging mixed pipe line.
An embodiment according to the present invention uses main hydrogen when the described buffer growth and when Withstand voltage layer is grown
It is reacted with one hydrogen silicon of trichlorine, is doped using doping injection gas.
An embodiment according to the present invention before the buffer growth, toasts substrate, baking time
For 20s~40s.
An embodiment according to the present invention, preparation doping injection gas when the described baking, so that doping injection gas
The stability of flow of body.
The preparation method of an embodiment according to the present invention, the doping injection gas is: using dilution hydrogen
Gas dilution doping gas source.
An embodiment according to the present invention, the dilution is hydrogen with hydrogen, dilute when toasting with buffer growth
Releasing with the flow of hydrogen is 7 liters/min~12 liters/min, and when carrying out purging and Withstand voltage layer growth after buffer growth, dilution is used
The flow of hydrogen is 4 liters/min~8 liters/min.
An embodiment according to the present invention, the doping gas source are phosphine or borine.
An embodiment according to the present invention when the described baking, leads to main hydrogen in growth chamber.
An embodiment according to the present invention, the purging after the baking and buffer growth, before Withstand voltage layer growth
When prepare one hydrogen silicon of trichlorine so that the stability of flow of one hydrogen silicon of trichlorine.
An embodiment according to the present invention, the method for the one hydrogen silicon of preparation trichlorine are by one hydrogen of trichlorine of liquid
Silicon gasification is the one hydrogen silicon of trichlorine of gas.
The flow of an embodiment according to the present invention, the one hydrogen silicon of trichlorine is 12 gram/minutes~18 Grams Per Minutes
Clock.
An embodiment according to the present invention is purged after the described Withstand voltage layer growth, the time of purging be 4s~
The specific method of 8s, purging are: being purged using main hydrogen to growth chamber.
An embodiment according to the present invention, the main hydrogen are hydrogen, and flow is 50 liters/min~70 liters/min
Clock.
An embodiment according to the present invention, when the described baking, when buffer growth, buffer growth post-purge
When, Withstand voltage layer growth when and Withstand voltage layer growth post-purge when temperature be 1100 DEG C~1130 DEG C.
A kind of two-layer epitaxial piece, is prepared by the above method, including substrate, the buffer layer being grown on substrate and is grown on
The resistivity of Withstand voltage layer on buffer layer, buffer layer less than 0.1 ohmcm and is more than or equal to 0.05 ohmcm, pressure resistance
The resistivity of layer is greater than 3 ohmcms and is less than or equal to 20 ohmcms.
An embodiment according to the present invention, the substrate are overweight doping, and for p-doped, the resistivity of substrate is
0.0007 ohmcm~0.0013 ohmcm；For boron-doping, the resistivity of substrate be 0.0005 ohmcm~
0.001 ohmcm.
The wide problem of the Withstand voltage layer transition region of present invention research two-layer epitaxial piece, the reason is that after the completion of buffer growth,
This layer can be still remained in the gas piping of epitaxy machine platform and grows the high-concentration dopant gas used, such as phosphine, borine, to lead
Cause is wide in the transition region for the Withstand voltage layer that low concentration is grown, and 30~45s of standard purge time is changed to be more than or equal to by the present invention
120s and be less than or equal to 300s, can solve this problem.
The effect of main hydrogen is carrier gas and reaction gas, removes autoxidation as reaction gas when being included in baking step
Layer participates in reduction reaction and carrier gas as reaction gas when vapor deposition, i.e., when carrying remaining reaction gas enters cavity, purges
As purge gas.The meaning of carrier gas is that the lesser one hydrogen silicon of trichlorine of flow and doping injection gas are carried along into growth
Cavity is reacted.The too low effect for not having removing natural oxidizing layer, purging of amounts of hydrogen, amounts of hydrogen is excessive to will affect extension
Growth rate and increase cost.Always it is passed through hydrogen in growth chamber, growth chamber can be kept clean, prevent growth chamber
The polysilicon deposited in cavity wall falls off, that is, coating falls off, and the polysilicon that falls off is avoided to influence the matter of epitaxial growth
Amount；It is passed through hydrogen, it is also possible that growth chamber generates positive pressure to the second exhaust gas channel, prevents the second exhaust gas channel gas backstreaming
To growth chamber.
One hydrogen silicon of trichlorine is main reaction gas, and set amount mainly considers first is that growth rate, i.e. 4 [mus, second is that
As close as possible to the median using range of flow control meter.After baking and buffer growth before buffer growth, pressure resistance
In purge before the growth of layer, it is just passed through one hydrogen silicon of trichlorine, is needed because it is gaseous state that one hydrogen silicon of trichlorine, which is from liquid gasification,
A process is wanted, and be passed through one hydrogen silicon of trichlorine in advance to facilitate the stabilization and control of flow, is pre- to one kind of gas pipeline
Heat, to preferably control buffer growth, Withstand voltage layer growth.
The setting of the flow of dilution hydrogen mainly will affect the value of electrical resistivity of epitaxy, and setting value is as far as possible in its mass flow
Near the median of control meter maximum range.Meanwhile the flow set of phosphine or borine also will affect the value of electrical resistivity of epitaxy, it should
The specification of the resistivity of buffer layer and Withstand voltage layer that flow is prepared as needed determines that phosphine or borine are dilute by dilution hydrogen
It releases namely the mixed gas of phosphine or borine and dilution hydrogen is doping injection gas, which injects the flow of gas
Directly determine that the value of electrical resistivity of epitaxy, the specification of the resistivity of buffer layer and Withstand voltage layer which prepares as needed determine.
The concentration of the flow of dilution hydrogen and phosphine or borine, dilution hydrogen and phosphine or borine is controlled it was determined that then controlling
The flow of system doping injection gas can control the value of electrical resistivity of epitaxy.Therefore, the baking before buffer growth and slow
After rushing layer growth, in the purge before the growth of Withstand voltage layer, be just passed through doping injection gas, can make buffer growth,
The stability of flow of doping injection gas when Withstand voltage layer is grown, is a kind of preheating to gas pipeline, helps to control buffer layer
Growth, Withstand voltage layer growth.
Detailed description of the invention
Fig. 1 is the distribution map of resistivity described in background technique；
Fig. 2 is the structure chart of two-layer epitaxial piece；
Fig. 3 is the equipment for preparing two-layer epitaxial piece；
Fig. 4 is the resistivity using two-layer epitaxial piece after the present invention.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing:
Embodiment 1
The growing method of the present embodiment two-layer epitaxial piece, Fig. 2 is shown current embodiment require that the two-layer epitaxial piece for preparing
Structure chart, grown buffer layer 9 on substrate 8 grow Withstand voltage layer 10 on buffer layer 9, and the substrate 8 is that common epitaxial growth uses
Substrate, be overweight doping, specifically: for p-doped, the resistivity of substrate 8 is 0.0007 ohmcm~0.0013 Europe
Nurse centimetre；For boron-doping, the resistivity of substrate 8 is 0.0005 ohmcm~0.001 ohmcm.Other are without special
It limits.
As shown in figure 3, the equipment for preparing two-layer epitaxial piece include: doping gas source pipe 1, the first mass flow control meter 2,
Dilution gas source pipe 3, the control of the second mass flow count 4, mixed pipe line 5,6, main hydrogen pipeline 16 is counted in the control of third mass flow,
4th mass flow control meter 17, independent pipeline 19, the 5th mass flow control meter the 28, first exhaust gas channel 20, the second tail gas
Channel 21, the first control valve 18, the second control valve 22 and growth chamber 7, wherein doping gas source pipe 1 and dilution gas source pipe 3
It is connected respectively with mixed pipe line 5, adulterates the gas flow in gas source pipe 1 by 2 control of the first mass flow control meter, dilution
By 4 control of the second mass flow control meter, mixed pipe line 5 is connected to growth chamber 7, grows gas flow in gas source pipe 3
Cavity 7 is for carrying out the growth of buffer layer 9 and the growth of Withstand voltage layer 10, and the gas flow flowed through in mixed pipe line 5 is by third matter
It measures flow control meter 6 to control, the gas flow of main hydrogen pipeline 16 is by 17 control of the 4th mass flow control meter, main hydrogen pipeline
16 connection growth chambers 7, independent pipeline 19 are connected to growth chamber 7, and the gas flow of independent pipeline 19 is by the 5th mass flow control
28 control of system meter, the entrance of the first exhaust gas channel 20 are set to intersection and the growth chamber 7 of mixed pipe line 5 and independent pipeline 19
Between, the entrance of the second exhaust gas channel 21 is connected to growth chamber 7, the outlet of the first exhaust gas channel 20 and the second exhaust gas channel 21
Outlet access board tail gas treatment device, the first control valve 18 is set to the inlet of the first exhaust gas channel 20, the first control
Valve 18 processed controls the gas in mixed pipe line 5 and independent pipeline 19 and leads to the first exhaust gas channel 20 or lead to growth chamber 7, the
One control valve 18 can be a kind of three-way magnetic valve, and the second control valve 22 is set to the inlet or outlet of the second exhaust gas channel 21
Place, the second control valve 22 be it is normally opened, i.e., when in growth chamber 7 being always there is gas to circulate namely production technology, the second tail
Gas channel 21 is normal open, and it is usually to carry out use when pressure maintaining is leaked hunting to growth chamber 7 that the second control valve 22, which is closed,.It is independent
Equipment for gasification is arranged in the input terminal of pipeline 19, and one hydrogen silicon source of supply of trichlorine is arranged in 19 entrance of independent pipeline, and independent pipeline 19 is used for
One hydrogen silicon of trichlorine is inputted, be passed through growth chamber 7 is gaseous one hydrogen silicon of trichlorine, and the one hydrogen silicon of trichlorine of liquid is by being set to solely
The one hydrogen silicon source of supply 24 of trichlorine of 19 entrance of standpipe road enters independent pipeline 19 after the gasification of equipment for gasification 23.Adulterate gas source pipe
Dilution hydrogen supply source 26, dilution is arranged in the entrance setting doping gas source source of supply 25 in road 1, the entrance of dilution gas source pipe 3
It can be hydrogen generator station with hydrogen supply source 26, main hydrogen supply source 27, main hydrogen supply source 27 is arranged in main 16 entrance of hydrogen pipeline
It can be hydrogen generator station.
Growing method the following steps are included:
Step 1: substrate 8 is placed in growth chamber 7, substrate 8 is toasted, substrate 8 uses overweight doping, for mixing
Phosphorus, the resistivity of substrate 8 are 0.0007 ohmcm；For boron-doping, the resistivity of substrate 8 is 0.0005 ohmcm；
Baking time 20s, 1100 DEG C of temperature, the purpose of baking be with main hydrogen at high temperature by substrate 10 natural oxidizing layer, one
A little possible contaminations are got rid of, and baking time is short to be not achieved above-mentioned requirements, and overlong time is first is that influence production capacity and cost, two also can
Generate the external diffusion of substrate doping.If baking can be using the temperature as epitaxial deposition without special demands.Lead to main hydrogen, guarantor
It is clean to hold growth chamber 7；One hydrogen silicon of trichlorine is prepared, independent pipeline 19 is preheated；Preparation doping injection gas, pre- hot doping gas source pipe
Road 1 and mixed pipe line 5；
Specifically: main hydrogen leads to growth chamber 7 from main hydrogen pipeline 16, and main hydrogen is discharged from the second exhaust gas channel 21,
Main hydrogen flowing quantity is 50 liters/min.Meanwhile it being passed through one hydrogen silicon of trichlorine from independent pipeline 19, flow is 12 gram/minutes；Meanwhile from
Dilution gas source pipe 3 is passed through 7 liters/min of dilution hydrogen；Meanwhile be passed through phosphine or borine from doping gas source pipe 1, phosphine or
Borine forms doping injection gas by dilution diluted in hydrogen in mixed pipe line 5, and phosphine or borine adulterate injection gas
Flow is determined all in accordance with the specification for the resistivity for needing buffer layer 9 and Withstand voltage layer 10 to be prepared；The first control valve 18 is controlled, so that
Doping injection gas and one hydrogen silicon of trichlorine are discharged before leading to growth chamber 7 from the first exhaust gas channel 20.The logical doping of this step
Injecting gas and one hydrogen silicon purpose of trichlorine is stability of flow, guarantees the growth of the buffer layer 9 of next step.
Step 2: the grown buffer layer 9 on substrate 8,0.05 ohmcm of resistivity, growth use one hydrogen silicon gas of trichlorine
The mutually method of deposition, is reacted using main hydrogen and one hydrogen silicon of trichlorine by 1100 DEG C of temperature, is mixed using doping injection gas
It is miscellaneous；
Specifically: one hydrogen silicon of trichlorine is passed through from independent pipeline 19 to growth chamber 7, flow is 12 gram/minutes；Meanwhile from
Main Hydrogen Line 16 is passed through 50 liters/min of main hydrogen to growth chamber 7；Meanwhile dilution hydrogen is passed through from dilution gas source pipe 3
Gas, 7 liters/min of flow；Meanwhile it being passed through phosphine or borine from doping gas source pipe 1, phosphine or borine lead in mixed pipe line 5
Cross dilution diluted in hydrogen and form doping injection gas, phosphine or borine, doping injection gas flow all in accordance with needing to prepare
Buffer layer 9 resistivity specification determine；The first control valve 18 is controlled, so that doping injection gas and one hydrogen silicon of trichlorine are passed through
Growth chamber 7.The specification of the thickness of the buffer layer 9 prepared as needed the total time of this step determines；Main hydrogen and trichlorine one
Hydrogen silicon is that buffer layer 9 adulterates have resistivity for growing monocrystalline silicon, doping injection gas；
Step 3: purging adulterates gas source pipe 1 using phosphine or borine purging using main hydrogen purge growth chamber 7,
Mixed pipe line 5 is purged using doping injection gas, while preparing one hydrogen silicon of trichlorine, so that the stability of flow of one hydrogen silicon of trichlorine；
Specifically: purging growth chamber 7, doping gas source pipe 1 and mixed pipe line 5, purging growth chamber 7 use main hydrogen
Gas, purging doping gas source pipe 1 use phosphine or borine, and purging mixed pipe line 5 uses the gaseous mixture of hydrogen and phosphine or borine
Body doping injection gas, purge duration 120s, 1100 DEG C of temperature；It is specific: to be passed through hydrogen from main Hydrogen Line 16 to growth chamber 7
50 liters/min of gas purgings, main hydrogen are discharged from the second exhaust gas channel 21；Meanwhile it being passed through one hydrogen silicon of trichlorine from independent pipeline 19, it flows
Amount is 12 gram/minutes；Meanwhile dilution hydrogen is passed through from dilution gas source pipe 3,4 liters/min of flow；Meanwhile from doping gas source
Pipeline 1 is passed through phosphine or borine, and purging doping gas source pipe 1, phosphine or borine enter mixed pipe line 5 and mixed with dilution with hydrogen
Doping injection gas is formed, purges mixed pipe line 5, the flow of phosphine or borine and doping injection gas is all in accordance with needing to prepare
Buffer layer 9 and Withstand voltage layer 10 resistivity specification determine；Control the first control valve 18, doping injection gas and one hydrogen of trichlorine
Silicon is discharged from the first exhaust gas channel 20；The logical doping injection gas of this step and one hydrogen silicon purpose of trichlorine are stability of flow, under guarantee
The growth of the Withstand voltage layer 10 of one step.
Step 4: growing Withstand voltage layer 10 on buffer layer 9,3.1 ohmcm of resistivity, growth uses one hydrogen silicon of trichlorine
The method of vapor deposition, 1100 DEG C of temperature；It is reacted using main hydrogen and one hydrogen silicon of trichlorine, is carried out using doping injection gas
Doping；
Specifically: one hydrogen silicon of trichlorine is passed through from independent pipeline 19 to growth chamber 7, flow is 12 gram/minutes；Meanwhile from
Main Hydrogen Line 16 is passed through 50 liters/min of hydrogen to growth chamber 7；Meanwhile it being passed through dilution hydrogen from dilution gas source pipe 3,
4 liters/min of flow；It is passed through phosphine or borine from doping gas source pipe 1, phosphine or borine enter mixed pipe line 5 and dilution hydrogen
Gas is mixed to form doping injection gas, phosphine or borine, doping injection gas flow all in accordance with needing Withstand voltage layer 10 to be prepared
Resistivity specification determine；The specification of the thickness of the Withstand voltage layer 10 prepared as needed the total time of this step determines；Control
First control valve 18, so that doping injection gas and one hydrogen silicon of trichlorine enter growth chamber 7；Main hydrogen and one hydrogen silicon of trichlorine are used for
Monocrystalline silicon is grown, doping injection gas is that Withstand voltage layer 10 adulterates have resistivity；
Step 5: purging, is passed through 50 liters/min of main hydrogen from main Hydrogen Line 16, purges growth chamber by 1100 DEG C of temperature
7, without being passed through phosphine or borine, doping injection rate, one hydrogen silicon of trichlorine or dilution hydrogen, this step total duration 4s.
The step of the present embodiment and its parameter are as shown in table 1, and wherein * * is indicated according to different buffer layer 9 and Withstand voltage layer 10
Thickness and resistivity be worth by the way that the normalized form setting of this field is corresponding, the meaning of cavity is main hydrogen, one hydrogen silicon of trichlorine
It is passed through growth chamber with doping injection gas to be reacted, the meaning of tail gas is main hydrogen, one hydrogen silicon of trichlorine by growth chamber
It is discharged after body, doping injection gas does not enter growth chamber and be discharged after mixed pipe line:
Table 1
Embodiment 2
The growing method of the present embodiment two-layer epitaxial piece, Fig. 2 is shown current embodiment require that the two-layer epitaxial piece for preparing
The step of structure chart, the equipment used is same as Example 1, the present embodiment is substantially the same manner as Example 1, only the design of parameter
Upper different from, comprising the following steps:
Step 1: substrate 8 is placed in growth chamber 7, substrate 8 is toasted, substrate 8 uses overweight doping, for mixing
Phosphorus, the resistivity of substrate 8 are 0.0013 ohmcm；For boron-doping, the resistivity of substrate 8 is 0.001 ohmcm；It dries
Roasting time 40s, 1130 DEG C of temperature, the purpose of baking is with main hydrogen at high temperature by the natural oxidizing layer, some on substrate 10
Possible contamination is got rid of, and baking time is short to be not achieved above-mentioned requirements, and overlong time is first is that influence production capacity and cost, two can also produce
The external diffusion of raw substrate doping, main hydrogen are discharged from the second exhaust gas channel 21.If baking can be using heavy with extension without special demands
The same temperature of product.Main hydrogen leads to growth chamber 7 from main hydrogen pipeline 16, and main hydrogen is discharged from the second exhaust gas channel 21, main
Hydrogen flowing quantity is 70 liters/min.Meanwhile it being passed through one hydrogen silicon of trichlorine from independent pipeline 19, flow is 18 gram/minutes；Meanwhile from dilute
It releases gas source pipe 3 and is passed through 12 liters/min of dilution hydrogen；Meanwhile be passed through phosphine or borine from doping gas source pipe 1, phosphine or
Borine forms doping injection gas by dilution diluted in hydrogen in mixed pipe line 5, and phosphine or borine adulterate injection gas
Flow is determined all in accordance with the specification for the resistivity for needing buffer layer 9 and Withstand voltage layer 10 to be prepared；The first control valve 18 is controlled, so that
Doping injection gas and one hydrogen silicon of trichlorine are discharged before leading to growth chamber 7 from the first exhaust gas channel 20.The logical doping of this step
Injecting gas and one hydrogen silicon purpose of trichlorine is stability of flow, guarantees the growth of the buffer layer 11 of next step.
Step 2: the grown buffer layer 9 on substrate 8,0.08 ohmcm of resistivity, growth use one hydrogen silicon gas of trichlorine
1130 DEG C of temperature, one hydrogen silicon of trichlorine is passed through from independent pipeline 19 to growth chamber 7 for the mutually method of deposition, and flow is 18 Grams Per Minutes
Clock；Meanwhile 70 liters/min of main hydrogen is passed through from main Hydrogen Line 16 to growth chamber 7；Meanwhile it being passed through from dilution gas source pipe 3
Dilution hydrogen, 12 liters/min of flow；Meanwhile it being passed through phosphine or borine from doping gas source pipe 1, phosphine or borine are mixing
Doping injection gas is formed by dilution diluted in hydrogen in pipeline 5, phosphine or borine, doping injection gas flow all in accordance with
The specification of the resistivity of buffer layer 9 to be prepared is needed to determine；The first control valve 18 is controlled, so that doping injection gas and trichlorine one
Hydrogen silicon is passed through growth chamber 7.The thickness specification of the buffer layer 9 prepared as needed the total time of this step determines；Main hydrogen and
One hydrogen silicon of trichlorine is that buffer layer 9 adulterates have resistivity for growing monocrystalline silicon, doping injection gas；
Step 3: purging, purging includes purging growth chamber 7, doping gas source pipe 1 and mixed pipe line 5, purges growth chamber
Body 7 uses main hydrogen, and purging doping gas source pipe 1 uses phosphine or borine, and purging mixed pipe line 5 uses hydrogen and phosphine or boron
Alkane mixed gas doping injection gas, purge duration 300s, 1130 DEG C of temperature；It is specific: from main Hydrogen Line 16 to growth
Cavity 7 is passed through 70 liters/min of hydrogen purgings, and main hydrogen is discharged from the second exhaust gas channel 21；Meanwhile three are passed through from independent pipeline 19
One hydrogen silicon of chlorine, flow are 18 gram/minutes；Meanwhile dilution hydrogen is passed through from dilution gas source pipe 3,8 liters/min of flow；Together
When, be passed through phosphine or borine from doping gas source pipe 1, purging doping gas source pipe 1, phosphine or borine enter mixed pipe line 5 with
Dilution is mixed to form doping injection gas with hydrogen, purges the flow of mixed pipe line 5, phosphine or borine and doping injection gas
It is determined all in accordance with the specification for the resistivity for needing buffer layer 9 and Withstand voltage layer 10 to be prepared；Control the first control valve 18, doping injection
Gas and one hydrogen silicon of trichlorine are discharged from the first exhaust gas channel 20；The logical doping injection gas of this step and one hydrogen silicon purpose of trichlorine are stream
Amount is stablized, and guarantees the growth of the Withstand voltage layer 10 of next step.
Step 4: growing Withstand voltage layer 10 on buffer layer 9,5 ohmcm of resistivity, growth uses one hydrogen silicon gas of trichlorine
The mutually method of deposition, 1130 DEG C of temperature；One hydrogen silicon of trichlorine is passed through from independent pipeline 19 to growth chamber 7, flow is 18 Grams Per Minutes
Clock；Meanwhile 70 liters/min of hydrogen are passed through from main Hydrogen Line 16 to growth chamber 7；Meanwhile it being passed through from dilution gas source pipe 3 dilute
It releases and uses hydrogen, 8 liters/min of flow；Be passed through phosphine or borine from doping gas source pipe 1, phosphine or borine enter mixed pipe line 5 with
Dilution is mixed to form doping injection gas with hydrogen, and the flow that phosphine or borine, doping inject gas is to be prepared all in accordance with needing
The specification of the resistivity of Withstand voltage layer 10 determines；The thickness specification of the Withstand voltage layer 10 prepared as needed the total time of this step is true
It is fixed；The first control valve 18 is controlled, so that doping injection gas and one hydrogen silicon of trichlorine enter growth chamber 7；Main hydrogen and trichlorine one
Hydrogen silicon is that Withstand voltage layer 10 adulterates have resistivity for growing monocrystalline silicon, doping injection gas；
Step 5: purging, is passed through 70 liters/min of main hydrogen from main Hydrogen Line 16, purges growth chamber by 1130 DEG C of temperature
7, without being passed through phosphine or borine, doping injection rate, one hydrogen silicon of trichlorine or dilution hydrogen, this step total duration 8s.
The step of the present embodiment and its parameter are as shown in table 2, and wherein * * is indicated according to different buffer layer 9 and Withstand voltage layer 10
Thickness and resistivity be worth by the way that the normalized form setting of this field is corresponding, the meaning of cavity is main hydrogen, one hydrogen silicon of trichlorine
It is passed through growth chamber with doping injection gas to be reacted, the meaning of tail gas is main hydrogen, one hydrogen silicon of trichlorine by growth chamber
It is discharged after body, doping injection gas does not enter growth chamber and be discharged after mixed pipe line:
Table 2
Embodiment 3
The growing method of the present embodiment two-layer epitaxial piece, Fig. 2 is shown current embodiment require that the two-layer epitaxial piece for preparing
The step of structure chart, the equipment used is same as Example 1, the present embodiment is substantially the same manner as Example 1, only the design of parameter
Upper different from, comprising the following steps:
Step 1: substrate 8 is placed in growth chamber 7, substrate 8 is toasted, substrate 8 uses overweight doping, for mixing
Phosphorus, the resistivity of substrate 8 are 0.0012 ohmcm；For boron-doping, the resistivity of substrate 8 is 0.0008 ohmcm；
Baking time 30s, 1120 DEG C of temperature, the purpose of baking be with main hydrogen at high temperature by substrate 10 natural oxidizing layer, one
A little possible contaminations are got rid of, and baking time is short to be not achieved above-mentioned requirements, and overlong time is first is that influence production capacity and cost, two also can
The external diffusion of substrate doping is generated, main hydrogen is discharged from the second exhaust gas channel 21.If baking can use and extension without special demands
The same temperature of deposition.Main hydrogen leads to growth chamber 7 from main hydrogen pipeline 16, and main hydrogen is discharged from the second exhaust gas channel 21,
Main hydrogen flowing quantity is 60 liters/min.Meanwhile it being passed through one hydrogen silicon of trichlorine from independent pipeline 19, flow is 16 gram/minutes；Meanwhile from
Dilution gas source pipe 3 is passed through 10 liters/min of dilution hydrogen；Meanwhile phosphine or borine, phosphine are passed through from doping gas source pipe 1
Or borine forms doping injection gas, phosphine or borine, doping injection gas by dilution diluted in hydrogen in mixed pipe line 5
Flow determined all in accordance with the specification for the resistivity for needing buffer layer 9 to be prepared and Withstand voltage layer 10；The first control valve 18 is controlled, is made
Injection gas and one hydrogen silicon of trichlorine must be adulterated to be discharged before leading to growth chamber 7 from the first exhaust gas channel 20.This step is logical to mix
It is stability of flow that pragma, which enters gas and one hydrogen silicon purpose of trichlorine, guarantees the growth of the buffer layer 11 of next step.
Step 2: the grown buffer layer 9 on substrate 8,0.099 ohmcm of resistivity, growth use one hydrogen silicon of trichlorine
1120 DEG C of temperature, one hydrogen silicon of trichlorine is passed through from independent pipeline 19 to growth chamber 7 for the method for vapor deposition, and flow is 16 Grams Per Minutes
Clock；Meanwhile 60 liters/min of main hydrogen is passed through from main Hydrogen Line 16 to growth chamber 7；Meanwhile it being passed through from dilution gas source pipe 3
Dilution hydrogen, 10 liters/min of flow；Meanwhile it being passed through phosphine or borine from doping gas source pipe 1, phosphine or borine are mixing
Doping injection gas is formed by dilution diluted in hydrogen in pipeline 5, phosphine or borine, doping injection gas flow all in accordance with
The specification of the resistivity of buffer layer 9 to be prepared is needed to determine；The first control valve 18 is controlled, so that doping injection gas and trichlorine one
Hydrogen silicon is passed through growth chamber 7.The thickness specification of the buffer layer 9 prepared as needed the total time of this step determines；Main hydrogen and
One hydrogen silicon of trichlorine is that buffer layer 9 adulterates have resistivity for growing monocrystalline silicon, doping injection gas；
Step 3: purging, purging includes purging growth chamber 7, doping gas source pipe 1 and mixed pipe line 5, purges growth chamber
Body 7 uses main hydrogen, and purging doping gas source pipe 1 uses phosphine or borine, and purging mixed pipe line 5 uses hydrogen and phosphine or boron
Alkane mixed gas doping injection gas, purge duration 140s, 1120 DEG C of temperature；It is specific: from main Hydrogen Line 16 to growth
Cavity 7 is passed through 60 liters/min of hydrogen purgings, and main hydrogen is discharged from the second exhaust gas channel 21；Meanwhile three are passed through from independent pipeline 19
One hydrogen silicon of chlorine, flow are 16 gram/minutes；Meanwhile dilution hydrogen is passed through from dilution gas source pipe 3,6 liters/min of flow；Together
When, be passed through phosphine or borine from doping gas source pipe 1, purging doping gas source pipe 1, phosphine or borine enter mixed pipe line 5 with
Dilution is mixed to form doping injection gas with hydrogen, purges the flow of mixed pipe line 5, phosphine or borine and doping injection gas
It is determined all in accordance with the specification for the resistivity for needing buffer layer 9 and Withstand voltage layer 10 to be prepared；Control the first control valve 18, doping injection
Gas and one hydrogen silicon of trichlorine are discharged from the first exhaust gas channel 20；The logical doping injection gas of this step and one hydrogen silicon purpose of trichlorine are stream
Amount is stablized, and guarantees the growth of the Withstand voltage layer 10 of next step.
Step 4: growing Withstand voltage layer 10 on buffer layer 9,20 ohmcm of resistivity, growth uses one hydrogen silicon of trichlorine
The method of vapor deposition, 1120 DEG C of temperature；One hydrogen silicon of trichlorine is passed through from independent pipeline 19 to growth chamber 7, flow is 16 Grams Per Minutes
Clock；Meanwhile 60 liters/min of hydrogen are passed through from main Hydrogen Line 16 to growth chamber 7；Meanwhile it being passed through from dilution gas source pipe 3 dilute
It releases and uses hydrogen, 6 liters/min of flow；Be passed through phosphine or borine from doping gas source pipe 1, phosphine or borine enter mixed pipe line 5 with
Dilution is mixed to form doping injection gas with hydrogen, and the flow that phosphine or borine, doping inject gas is to be prepared all in accordance with needing
The specification of the resistivity of Withstand voltage layer 10 determines；The thickness specification of the Withstand voltage layer 10 prepared as needed the total time of this step is true
It is fixed；The first control valve 18 is controlled, so that doping injection gas and one hydrogen silicon of trichlorine enter growth chamber 7；Main hydrogen and trichlorine one
Hydrogen silicon is that Withstand voltage layer 10 adulterates have resistivity for growing monocrystalline silicon, doping injection gas；
Step 5: purging, is passed through 60 liters/min of main hydrogen from main Hydrogen Line 16, purges growth chamber by 1120 DEG C of temperature
7, without being passed through phosphine or borine, doping injection rate, one hydrogen silicon of trichlorine or dilution hydrogen, this step total duration 5s.
The step of the present embodiment and its parameter are as shown in table 3, and wherein * * is indicated according to different buffer layer 9 and Withstand voltage layer 10
Thickness and resistivity be worth by the way that the normalized form setting of this field is corresponding, the meaning of cavity is main hydrogen, one hydrogen silicon of trichlorine
It is passed through growth chamber with doping injection gas to be reacted, the meaning of tail gas is main hydrogen, one hydrogen silicon of trichlorine by growth chamber
It is discharged after body, doping injection gas does not enter growth chamber and be discharged after mixed pipe line:
Table 3
The two-layer epitaxial piece prepared using method of the invention extends probe using extension to monitor the transition region of Withstand voltage layer
Width, as shown in figure 4, after lengthening buffer growth after-blow flyback time and being greater than 120 seconds, the extension of buffer layer 9 and Withstand voltage layer 10
Spreading resistance depth distribution is identical with device design requirement, and it is wide, " collapsing " to solve 45 seconds width of transition zone of purge time
Problem.
Embodiment in the present invention is only used for that the present invention will be described, and is not construed as limiting the scope of claims limitation,
Other substantially equivalent substitutions that those skilled in that art are contemplated that, all fall in the scope of protection of the present invention.
Claims (17)
1. a kind of growing method of two-layer epitaxial piece, which is characterized in that then grown buffer layer on substrate is given birth on the buffer layer
Long Withstand voltage layer；It after buffer growth, before Withstand voltage layer growth, is purged, time of purging is more than or equal to 120s and is less than etc.
In 300s.
2. the growing method of two-layer epitaxial piece according to claim 1, which is characterized in that described in buffer growth
Afterwards, the purging before Withstand voltage layer growth is specifically: setting growth chamber, growth chamber are used for the growth of buffer layer and Withstand voltage layer, make
With main hydrogen purge growth chamber, mixed pipe line is set for being passed through doping injection gas, doping injection gas and is used for buffer layer
With the doping of Withstand voltage layer, mixed pipe line is purged using doping injection gas.
3. the growing method of two-layer epitaxial piece according to claim 2, which is characterized in that when the described buffer growth and
It when Withstand voltage layer is grown, is reacted using main hydrogen and one hydrogen silicon of trichlorine, is doped using doping injection gas.
4. the growing method of two-layer epitaxial piece according to claim 3, which is characterized in that the buffer growth it
Before, substrate is toasted, baking time is 20s~40s.
5. the growing method of two-layer epitaxial piece according to claim 4, which is characterized in that preparation doping when the described baking
Gas is injected, so that the stability of flow of doping injection gas.
6. the growing method of two-layer epitaxial piece according to claim 5, which is characterized in that the doping injection gas
Preparation method is: adulterating gas source using dilution diluted in hydrogen.
7. the growing method of two-layer epitaxial piece according to claim 6, which is characterized in that the dilution is hydrogen with hydrogen
Gas, when toasting with buffer growth, the flow of dilution hydrogen is 7 liters/min~12 liters/min, is carried out after buffer growth
When purging and Withstand voltage layer growth, the flow of dilution hydrogen is 4 liters/min~8 liters/min.
8. the growing method of two-layer epitaxial piece according to claim 6, which is characterized in that the doping gas source is phosphine
Or borine.
9. the growing method of two-layer epitaxial piece according to claim 4, which is characterized in that when the described baking, growth chamber
Lead to main hydrogen in body.
10. the growing method of two-layer epitaxial piece according to claim 4, which is characterized in that the baking and buffer layer
After growth, Withstand voltage layer growth before purging when prepare one hydrogen silicon of trichlorine so that the stability of flow of one hydrogen silicon of trichlorine.
11. the growing method of two-layer epitaxial piece according to claim 10, which is characterized in that one hydrogen of preparation trichlorine
The method of silicon is the one hydrogen silicon of trichlorine of liquid to gasify for the one hydrogen silicon of trichlorine of gas.
12. the growing method of two-layer epitaxial piece described in 0 or 11 according to claim 1, which is characterized in that one hydrogen of trichlorine
The flow of silicon is 12 gram/minutes~18 gram/minutes.
13. the growing method of two-layer epitaxial piece according to claim 9, which is characterized in that after the Withstand voltage layer growth
It is purged, the time of purging is 4s~8s, and the specific method of purging is: being purged using main hydrogen to growth chamber.
14. the growing method of two-layer epitaxial piece according to claim 13, which is characterized in that the main hydrogen is hydrogen
Gas, flow are 50 liters/min~70 liters/min.
15. the growing method of two-layer epitaxial piece according to claim 13, which is characterized in that when the described baking, buffering
Temperature when layer growth, when buffer growth post-purge, when Withstand voltage layer growth and when Withstand voltage layer growth post-purge is 1100 DEG C
~1130 DEG C.
16. a kind of two-layer epitaxial piece is prepared by the described in any item methods of claim 1-15, which is characterized in that including lining
Bottom, the buffer layer being grown on substrate and the Withstand voltage layer being grown on buffer layer, the resistivity of buffer layer is less than 0.1 ohm li
Rice and it is more than or equal to 0.05 ohmcm, the resistivity of Withstand voltage layer is greater than 3 ohmcms and is less than or equal to 20 ohm lis
Rice.
17. two-layer epitaxial piece according to claim 16, which is characterized in that the substrate is overweight doping, for mixing
Phosphorus, the resistivity of substrate are 0.0007 ohmcm~0.0013 ohmcm；For boron-doping, the resistivity of substrate is
0.0005 ohmcm~0.001 ohmcm.
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