201250787 六、發明說明： 【發明所屬之技術領域】 本發明是關於一種蠢晶石夕晶圓的製造方法，此方法使 單晶石夕在單晶矽基板上進行磊晶成長，胜積層以作為磊晶 層0 【先前技術】 蟲晶矽晶圓（以下簡稱為「磊晶晶圓」），例如能以下 述方式來進行製造。 亦即’將單晶矽基板載置在氣相成長裝置的反應容器 内’在使氫氣流動的狀態下，將反應容器内的溫度升溫至 1000°C〜1200°c (升溫步驟）。反應容器内的溫度達到1000 °C以上時’在基板表面所形成的自然氧化膜（si〇2 : Silicon Dioxide)會被除去。在該狀態下，將三氯矽烷（SiHCi3 :201250787 VI. Description of the Invention: [Technical Field] The present invention relates to a method for manufacturing a stupid crystal wafer, which is used to perform epitaxial growth on a single crystal germanium substrate. Epitaxial layer 0 [Prior Art] A worm wafer (hereinafter referred to as an "epitaxial wafer") can be manufactured, for example, in the following manner. That is, the single crystal germanium substrate is placed in the reaction vessel of the vapor phase growth apparatus. The temperature in the reaction vessel is raised to 1000 ° C to 1200 ° C in a state where hydrogen gas flows (temperature rising step). When the temperature in the reaction vessel reaches 1000 ° C or higher, the natural oxide film (si〇2 : Silicon Dioxide) formed on the surface of the substrate is removed. In this state, trichloromethane (SiHCi3:
Trichlorosilane)等的矽原料氣體、乙硼烷（B2h6 : Diborane) 或磷化氫（PH3 : Phosphine)、三氫化砷（AsH3 : Arsine)等的 摻雜劑氣體’與氫氣一同作為處理氣體（pr〇cess gas)並供給 至反應容器内。如此進行而在基板的主表面上使磊晶層進 行氣相成長（磊晶成長步驟）。 如此進行而使蠢晶層氣相成長後’停止供給碎原料氣 體及換雜劑氣體’並在保持於氫氣氣氛的狀態下，使反應 容器内的溫度降溫（冷卻步驟）。 關於這樣製造出來的磊晶晶圓的品質，元件製造商要 201250787 求需提升在晶圓 内的蟲晶層的膜厚和電阻值的均勺性 (以下稱為「膜厚分佈」和「 勺勺陡 電阻分佈的嚴謹(tight)i ㈣要求 然而在以上述方式來製造磊晶晶圓的過程内，A raw material gas such as Trichlorosilane), a dopant gas such as diborane (B2h6: Diborane) or phosphine (PH3: Phosphine) or arsine (AsH3: Arsine) is used as a processing gas together with hydrogen (pr〇) Cess gas) and supplied to the reaction vessel. In this manner, the epitaxial layer is subjected to vapor phase growth on the main surface of the substrate (epitaxial growth step). After the gas phase growth of the stray layer is carried out in this manner, the supply of the raw material gas and the dopant gas is stopped, and the temperature in the reaction vessel is lowered while maintaining the hydrogen atmosphere (cooling step). Regarding the quality of the epitaxial wafer thus manufactured, the component manufacturer needs to increase the film thickness and the resistance value of the insect crystal layer in the wafer (hereinafter referred to as "film thickness distribution" and "spoon" in 201250787. The stringent resistance distribution of the spoon is tight (i) required. However, in the process of manufacturing the epitaxial wafer in the above manner,
成長步驟中的（1、忐具、# HB 成長溫度、（2)矽原料氣體供給量、（3)反 應壓力是重要的三個要素，並能夠錢需要進行調整。若 &二個要素在蟲晶晶圓的面内是均句#，則膜厚分佈、電 阻分佈就會最佳。 但是，除了上述之外，會影響到電阻分佈卻無法依照 需要進仃調整的要素，有從基板產生的（4)排氣（逸出氣體 (outgas))。電阻分佈與排氣的關係說明如下。 在磊晶成長步驟中，基板在100(rc以上的高溫下被進 行退火，所以會從基板產生含有摻雜劑的排氣。特別是排 氣會從基板背面產生’並繞到表面側。雖然在表面的氣相 成長是利用處理氣體來進行’但是從基板背面繞過來的排 氧’會混入處理氣體中而換雜至成長中的县晶層内（以下， 稱為「自動掺雜（autodoping)」）。 因此，製造後的蟲晶晶圓’其中心部分與邊緣部所掺 雜的摻雜劑的量會有所差異’而在使用排氣多的低電阻（大 約10.ΟηιΩ .cm以下）的基板的情況，這種自動摻雜的影響 會很顯著。 為了減少這種自動摻雜’以往所採取的使層流的載氣 (載送氣體）流下的方法，是將處理爐内氣體流速設為2m/ 分以上、或將氣體置換次數設為3次/分以上（專利文獻1) 201250787 等’但是要大幅降低自動摻.雜量非常困難。 又’為了因應低耐壓Ρ-MOS元件用途，強烈要求一種 遙晶石夕晶圓’其單晶矽晶板的電阻率設成非常低。其中， 將摻雜大量的紅磷而成的CZ結晶作為磊晶基板，也就是 N/N+++(5xl〇19atoms/cm3左右）蟲晶晶圓，作為從今以後的 主流而受到重視。 但是，因為磷在矽（Si)中的擴散係數高，所以在磊晶成 長步驟的熱處理中會容易地擴散，而有容易引起從背面發 生的自動摻雜所造成的磊晶層的電阻率下降或在過渡區域 (transition regi〇n)中的輪廓下垂問題。 [先前技術文獻] (專利文獻） 專利文獻1 .曰本特開平第08_236458號公報 【發明内容】 [發明所欲解決之問題] 此處，本發明是蓉於這種問題而完成，其目的在於提 供:制W晶圓的製造方法，其能夠在遙晶成長中抑制 由单晶碎基板向蟲晶層之白叙换μ θ , 均I目動摻雜罝，以得到電阻分佈良 好的磊晶晶圓。 [解決問題之技術手段] 為了解決上述問題 造方法，是使單晶石夕蟲 ，本發明提供一種磊晶矽晶圓的 晶成長在單晶矽基板上來積層磊 製 晶 201250787 層的方法’所述磊晶矽晶圓的製造方法的特徵在於： 在電阻率疋〇_5mQ · cm以上且· cm以下並 被磷或砷摻雜的前述單晶矽基板上，將成長速度設為3从 分以上且15 # m/分以下，來成長出電阻率是〇 5Ω .⑽ 以上且200〇Ω . cm以下的前述磊晶層。 若依照這種磊晶;ε夕晶圓的製造方法，即使是在使用播 雜紅磷而成的基板或摻雜砷而成的基板等的具有非常低的 電阻且非常容易受到自動掺雜的影響的基板的情況，也能 將3亥影響抑制到最小，而能夠製造出一種電阻分佈良好的 磊晶晶圓。進而，因為將磊晶層的成長速度設為3 # m/分 以上的高速度，所以能夠謀求提升生產性及產率。又利 用將成長速度設為1 5 # m/分以下，能夠抑制矽原料氣體與 氫氣的反應所產生的會阻礙磊晶成長的HC1氣體，而以安 定的方式進行磊晶成長。 又’若是在電阻率是〇.5〇 . cm以上且10 0q . 下的延種單晶矽基板上，形成電阻率是0.5 Ω · cm以上且 2000 Ω · cm以下的磊晶晶圓，因為特別容易受到自動摻雜 的影響，所以適用於本發明的製造方法。 此時’進行則述遙晶成長時的成長溫度，較佳是 設為1000°C以上。 右是這種成長溫度’就能確實地除去單晶矽基板上的 自&氧化膜’而在單晶石夕基板上得到膜厚分佈更良好的兹 晶晶圓。 又此時’刖述磊晶層的成長速度，較佳是設為5 y 201250787 m/分以上且15 μ m/分以下。 若是這種成長速度’就能更有效抑制自動摻雜，而安 定地得到電阻分佈及膜厚分佈更良好的磊晶晶圓。 又，此時，在遙晶成長中，能夠預先求得由前述單晶 矽基板向蟲晶層的自動換雜量與前述蠢晶層的成長速度的 相關關係’基於該相關關係來決定前述磊晶層的成長速度。 這樣一來，因為能夠以適當的成長速度來進行磊晶成 長’該適當的成長速度能夠有效地使磊晶晶圓的中央部及 邊緣部的電阻分佈更均勻，所以能夠防止過多的矽原料氣 體或載氣流入、以及防止爐内溫度上升過高，而能確實地 持續製造電阻分佈更良好的磊晶晶圓，進而降低成本。 [功效] 如以上說明，依照本發明，能夠有效抑制磊晶成長中 的自動摻雜，藉此能夠製造電阻分佈良好的磊晶晶圓。 又，因為將磊晶層的成長速度設定為高速度以進行磊 晶成長，所以能夠提升生產性及良率。 【實施方式】 以下，參照第4圖的流程圖來說明本發明的實施形態 也就是磊晶矽晶圓的製造方法，但是本發明不受限於此; 施形態。第4圖是表示本發明的磊晶矽晶圓的製造方法的 一例的流程圖的圖。 此處，針對以不改變遙晶層的成長溫度而增加石夕原料 201250787 r以來進行高速成長的情況進行敘述，但是當然也 原料氣體的量而提高成長溫度的方式來進行 声二古乂増加矽原料氣體進而也提高磊晶層的成長溫 度的方式來進行成長。 在氣相成長裝置的反應容器内所具備的基座 上使用搬運裂置，來載置電阻率是〇.5πιΩ . em以上且 Ω 以下並被磷摻雜而成的單晶矽基板（裝入步 )此夺單曰曰矽基板，較佳是由摻雜紅磷而成的CZ結 曰曰斤製U又，也能以摻雜砷的方式來取代填。 。繼而，在反應容器内使氫氣流動的狀態下，使反應容 器内的溫度，升溫至使蠢晶層進行氣相成長的成長溫度（升 脈步驟）。此成長溫度，設定為能以氫氣確實地除去基板表 面的自然氧化膜的1 〇〇〇它以上。此情況下，上限並沒有特 別限制，但是若在丨3〇〇它以下，則能夠抑制滑移（slip)的產 生或污染的產生。 繼而，在反應容器内維持成長溫度，分別以預定流量 來供給氫氣、矽原料氣體及摻雜劑氣體，藉此以成長速度 疋3 " m/分以上且1 5 " m/分以下、更佳是5 " m/分以上且 15em/分以下、最佳是6em/分以上且I5ym/分以下的方 式’使電阻率是0.5m Ω . cm以上且2000m Ω . cm以下的 磊晶層成長至預定膜厚（磊晶成長步驟）。在從通常的成長 速度變成高速成長的情況下，雖然依據成長溫度會有所差 異，但是矽原料氣體通常需增加至1.5倍〜4倍。 在本發明中，即使在1000°C以上的高溫，由於是以3 201250787In the growth step, (1, cookware, # HB growth temperature, (2) 矽 raw material gas supply, and (3) reaction pressure are important three factors, and the money needs to be adjusted. If & In the in-plane of the crystal wafer, the film thickness distribution and the resistance distribution are optimal. However, in addition to the above, the elements that affect the resistance distribution but cannot be adjusted as needed are generated from the substrate. (4) Exhaust gas (outgas). The relationship between the resistance distribution and the exhaust gas is explained as follows. In the epitaxial growth step, the substrate is annealed at a high temperature of 100 (rc or higher, so it is generated from the substrate. Exhaust gas containing dopants. In particular, the exhaust gas will be generated from the back surface of the substrate and wound around the surface side. Although the vapor phase growth on the surface is performed by the processing gas, the oxygen venting from the back surface of the substrate will be mixed. The gas is mixed into the growing crystal layer of the county (hereinafter referred to as "autodoping"). Therefore, the fabricated wafer wafer has a blend of its central portion and the edge portion. The amount of impurities will vary 'When using a low-resistance (about 10. ιηιΩ.cm or less) substrate with a large amount of exhaust gas, the effect of such automatic doping is significant. To reduce this automatic doping's previous laminar flow The method of flowing the carrier gas (carrier gas) is to set the flow rate of the gas in the treatment furnace to 2 m/min or more, or to set the number of gas replacements to 3 times/min or more (Patent Document 1) 201250787, etc. It is very difficult to automatically mix the amount of impurities. In order to respond to the use of low withstand voltage Ρ-MOS devices, it is strongly required that the resistivity of a single crystal twin crystal wafer is set to be very low. A large amount of red phosphorus-derived CZ crystal is used as an epitaxial substrate, that is, N/N+++ (5xl〇19 atoms/cm3 or so) wafer wafer, which has received attention as a mainstream from now on. However, because phosphorus is in germanium (Si) The diffusion coefficient is high, so it is easily diffused in the heat treatment of the epitaxial growth step, and there is a possibility that the resistivity of the epitaxial layer is lowered due to the automatic doping occurring from the back surface or in the transition region (transition regi〇) Contouring in n) [Prior Art Document] (Patent Document) Patent Document 1. Japanese Patent Application Publication No. 08-236458 [Draft] [Problems to be Solved by the Invention] Here, the present invention is completed in accordance with such a problem, and The object of the invention is to provide a method for manufacturing a W wafer, which can suppress the white θ θ from the single crystal broken substrate to the worm layer during the growth of the remote crystal, and the ytterbium is uniformly doped to obtain a good resistance distribution. Epitaxial wafer [Technical means for solving the problem] In order to solve the above problem, the method is to make a single crystal stone, and the present invention provides a crystal growth of an epitaxial germanium wafer on a single crystal germanium substrate to laminate a crystal. 201250787 The method of manufacturing a layered germanium wafer is characterized in that a growth rate is obtained on the single crystal germanium substrate doped with phosphorus or arsenic at a resistivity of 疋〇_5 mQ · cm or more and · cm or less The above-described epitaxial layer having a resistivity of 〇5 Ω (10) or more and 200 〇Ω·cm or less is grown in a range of 3 or more and 15 #m/min or less. According to this epitaxial wafer manufacturing method, even a substrate made of doped red phosphorus or a substrate doped with arsenic has a very low resistance and is highly susceptible to autodoping. In the case of the affected substrate, the effect of the 3H can be minimized, and an epitaxial wafer having a good resistance distribution can be manufactured. Further, since the growth rate of the epitaxial layer is set to a high speed of 3 #m/min or more, productivity and productivity can be improved. Further, by setting the growth rate to 15 5 m/min or less, the HC1 gas which inhibits the epitaxial growth due to the reaction between the raw material gas and the hydrogen gas can be suppressed, and the epitaxial growth can be carried out in a stable manner. In addition, if the resistivity is 〇.5〇.cm or more and 10 0q. on the extended single crystal germanium substrate, an epitaxial wafer having a resistivity of 0.5 Ω·cm or more and 2000 Ω·cm or less is formed because It is particularly susceptible to the effects of automatic doping and is therefore suitable for use in the manufacturing method of the present invention. In this case, the growth temperature at the time of the growth of the remote crystal is preferably set to 1000 ° C or higher. On the right side, such a growth temperature can be surely removed from the <oxide film' on the single crystal germanium substrate, and a crystal wafer having a better film thickness distribution on the single crystal substrate can be obtained. Further, at this time, the growth rate of the epitaxial layer is preferably set to 5 y 201250787 m / min or more and 15 μ m / min or less. If this growth rate is used, it is possible to more effectively suppress the automatic doping, and to stably obtain an epitaxial wafer having a better resistance distribution and a film thickness distribution. Further, in this case, in the growth of the remote crystal, the correlation between the amount of the automatic substitution of the single crystal germanium substrate to the crystal layer and the growth rate of the stray layer can be determined in advance, and the correlation is determined based on the correlation. The growth rate of the crystal layer. In this way, since the epitaxial growth can be performed at an appropriate growth rate, the appropriate growth rate can effectively make the resistance distribution of the center portion and the edge portion of the epitaxial wafer more uniform, thereby preventing excessive bismuth material gas. Or the carrier gas flow and the temperature rise in the furnace are prevented from being excessively high, and the epitaxial wafer having a better resistance distribution can be surely continuously manufactured, thereby reducing the cost. [Effect] As described above, according to the present invention, it is possible to effectively suppress the automatic doping in the epitaxial growth, thereby enabling the production of an epitaxial wafer having a good resistance distribution. Further, since the growth rate of the epitaxial layer is set to a high speed to perform epitaxial growth, productivity and yield can be improved. [Embodiment] Hereinafter, an embodiment of the present invention, that is, a method of manufacturing an epitaxial germanium wafer, will be described with reference to a flowchart of Fig. 4, but the present invention is not limited thereto. Fig. 4 is a view showing a flowchart showing an example of a method for producing an epitaxial germanium wafer of the present invention. Here, the case where the high-speed growth of the Shih-Hsin raw material 201250787 r is carried out without changing the growth temperature of the crystal layer is described. However, the sound growth rate is also increased by the amount of the raw material gas. The raw material gas is further grown in such a manner as to increase the growth temperature of the epitaxial layer. A single crystal germanium substrate having a resistivity of 〇.5πιΩ.em or more and Ω or less and doped with phosphorus is placed on the susceptor provided in the reaction container of the vapor phase growth apparatus. Step) This single-layer substrate, preferably made of a CZ junction doped with red phosphorus, can also be replaced by doping arsenic. . Then, in a state where hydrogen gas flows in the reaction vessel, the temperature in the reaction vessel is raised to a growth temperature at which the stray layer is vapor-phase grown (ascending step). The growth temperature is set to be 1 〇〇〇 or more which can remove the natural oxide film on the surface of the substrate by hydrogen gas. In this case, the upper limit is not particularly limited, but if it is below 丨3〇〇, it is possible to suppress the occurrence of slip or the occurrence of contamination. Then, the growth temperature is maintained in the reaction vessel, and the hydrogen gas, the helium source gas, and the dopant gas are supplied at a predetermined flow rate, thereby increasing the growth rate by 3 " m/min or more and 15 " m/min or less. More preferably, 5 " m / min or more and 15 em / min or less, and most preferably 6 em / min or more and I5 y / min or less 'the resistivity is 0.5 m Ω . cm or more and 2000 m Ω · cm or less of the epitaxial crystal The layer is grown to a predetermined film thickness (epitaxial growth step). In the case of changing from the normal growth rate to the high-speed growth, although the growth temperature varies, the raw material gas usually needs to be increased by 1.5 times to 4 times. In the present invention, even at a high temperature of 1000 ° C or higher, since it is 3 201250787
Mm/分以上且15 ym/分以下的成長速度來使磊晶層高速 成長’所以能夠抑制摻雜在基板中的摻雜劑的自動播雜 量’而安定地成長出電阻分佈及膜厚分#良好的磊晶層。 又，此處也能預先求得由基板向磊晶層的自動摻雜量 與磊晶層的成長速度的相關關係’基於該相關關係來決定 成長速度。 例如，在電阻率是2.0ιηΩ ^爪且摻雜磷而成的單晶矽 基板上，將成長溫度設為110(rc並使矽原料氣體也就是三 氣矽烷氣體的流量變化’藉此將成長速度設定在1〜9 刀之間作變化來積層出磊晶$。分別測定此時所得到的磊 晶晶圓的自動摻雜量的結果，能夠得到如第1圖所示的自 動摻雜量與成長速度之間的相關關係。 在基於此相關關係來決定成長速度的情況，例如相較 於以2以m/分以下的通常的成長速度來進行磊晶成長的情 况得知若將成長速度設定為3 m/分以上，則自動摻雜 量會被抑帝卜X’得知若將成長速度設$ 5”/分以上， 則自動摻雜量會更有效地被抑制，進而，若將成長速度設 為6ym/分以上，則自動摻雜幾乎不會產生，而使磊晶晶 圓的邊緣部與中心部分的電阻率大致沒有差異，於是電阻 刀佈及膜厚分佈大致均勻化。 繼而，使反應谷器内的溫度下降至取出溫度來冷卻磊 日曰日日圓（冷卻步驟）。在此冷卻步驟中，在8⑽它至左 右之間，將氫氣氣氛切換為氮氣氣氛。然後，維持氮氣氣 吼直到下降至取出溫度為止，再將磊晶晶圓從氣相成長裝 201250787 置中取出（取出步驟）。 ^繼而對於取出後的磊晶晶圓，進行適當的rCa洗淨 等的洗淨（洗淨步驟）。此洗淨步驟中的洗淨方法，除了 i 型的RCA洗潘夕从， ^ 外’也能使用在通常進行的範圍内變更藥 液的漠度或種類的其他洗淨。 然後’利用粒子計數器，確認在磊晶晶圓表面上有無 產生的粒子壯θ & 、 的異物（粒子計數器計測），來檢選之後要作 為製品的磊晶晶圓（檢選）。 [實施例] —p- ， 本 一 •^不的實施例及比較例來具體地說明本發明， 但是本發明並未限定於這些實施例。 (實施例1) 在電阻率疋· cm且摻雜構而成的直徑20〇mm °°夕土板上，以成長溫度11〇〇。〇、成長速度設為6以 刀的,件來進仃尚速成長’而生成電阻率1.5m Ω . cm 、：疋“ 01的磊晶層，藉此來製造磊晶晶圓。之後， ^向上冽又所製造的磊晶晶圓的電阻率。將此時的 結果，表示在第2圖。 (實施例2) ，電阻率是2.〇mQ .cm且捧㈣而成的直徑2〇〇随 、早：矽基板上’以成長溫度110〇°C、成長速度設定為6 ":的條件來進行尚速成長’而生成電阻率2.0mΩ · cm 且膜厚是^的兹晶層’藉此來製造蟲晶晶圓。之後， 10 201250787 在直徑方向上測定所製造的磊晶晶圓的電阻率。將此時的 結果’表示在第3圖。 (比較例1) 除了將成長速度設定為2 // m/分以外，以與實施例丄 相同的方法來製造磊晶晶圓。之後，在直徑方向上測定所 製造的遙晶晶圓的電阻率。將此時的結果，—起表示在第 2圖。 (比較例2) 除了將成長速度設定為 相同的方法來製造磊晶晶圓 製造的磊晶晶圓的電阻率。 3圖0 2 μ m/分以外，以與實施例2 。之後，在直徑方向上測定所 將此時的結果，一起表示在第 在比較例i及比較例2中所示的條件下進行蟲晶成長 的情況，因為是在1000°C以上的高溫狀態，在低電阻基板 上以2vm/分的通常的成長速度來形成高電阻的磊晶層， 所以摻雜在基板中的磷或砷會擴散而容易受到自動摻雜的 影響。因此，在比較例i及比較例2中，所製造的蠢晶晶 圓的邊緣部的電阻率會極度下降。 但是，在使用本發明的製造方法而進行的實施例i及 實施例2 t，因為是以—/分的成長速度來使蟲晶層高 速成長，戶斤以能夠抑制產生的自動摻雜量。因此，得知所 製造的磊晶晶圓的邊緣部與中心部的電阻率會大致均勻。 另外’本發明不受限於上述實施形態。例如，在本發 明中’使磊晶層進行氣相成長的氣相成長裝置並未限定， 201250787 而能夠適用縱型（扁平型）、桶型（圓筒型）、單片型等各種氣 相成長裝置。上述實施形態是例示，任何與本發明的申請 專利範圍所記載的技術思想具有實質上相同的構成且能發 揮相同作用功效的例子’都包含在本發明的技術範圍中。 【圖式簡單說明】 第1圖是表示由基板向磊晶層的自動摻雜量與前述兹 晶層的成長速度的相關關係的圖表的一例的圖。 第2圖是表示在實施例1及比較例1中的磊晶晶圓的 直徑方向的電阻分佈的圖表的圖。 第3圖是表示在實施例2及比較例2中的磊晶晶圓的 直徑方向的電阻分佈的圖表的圖。 第4圖是表示本發明的磊晶矽晶圓的製造方法的—例 的流程圖的圖。 【主要元件符號說明】 益 12The growth rate of Mm/min or more and 15 ym/min or less makes the epitaxial layer grow at a high speed. Therefore, it is possible to suppress the automatic amount of dopant doping in the substrate, and to stably grow the resistance distribution and the film thickness. #Good epitaxial layer. Further, in this case, the correlation between the amount of the automatic doping of the substrate to the epitaxial layer and the growth rate of the epitaxial layer can be determined in advance based on the correlation. For example, on a single crystal germanium substrate having a resistivity of 2.0 ηηΩ^px and doped with phosphorus, the growth temperature is set to 110 (rc and the flow rate of the ruthenium raw material gas, that is, the trioxane gas is changed) The speed setting is changed between 1 and 9 knives to laminate the epitaxial ray. The results of measuring the automatic doping amount of the epitaxial wafer obtained at this time are respectively obtained, and the automatic doping amount as shown in Fig. 1 can be obtained. Correlation with the growth rate. When the growth rate is determined based on the correlation, for example, when the epitaxial growth is performed at a normal growth rate of 2 m/min or less, the growth rate is known. When the setting is 3 m/min or more, the automatic doping amount will be suppressed by the emperor X'. If the growth rate is set to $5"/min or more, the automatic doping amount will be more effectively suppressed. When the growth rate is 6 μm/min or more, the automatic doping hardly occurs, and the resistivity of the edge portion and the center portion of the epitaxial wafer is substantially not different, so that the resistance knives and the film thickness distribution are substantially uniform. To lower the temperature inside the reaction vessel to The temperature is used to cool the day and day (the cooling step). In this cooling step, the hydrogen atmosphere is switched to a nitrogen atmosphere between 8 (10) and between the left and right. Then, the nitrogen gas is maintained until the temperature is lowered until the temperature is taken out. The epitaxial wafer is taken out from the vapor phase growth device 201250787 (take-out step). Then, the extracted epitaxial wafer is subjected to appropriate rCa cleaning or the like (washing step). In the cleaning method, in addition to the i-type RCA wash Pan Xi, ^ external 'can also use the other kind of washing to change the influx or type of liquid in the usual range. Then 'use the particle counter to confirm the Lei The presence or absence of the generated particles on the surface of the wafer, the foreign matter (particle counter measurement), is selected as the epitaxial wafer (selected) of the product. [Example] —p- , Ben 1 • The present invention will be specifically described by way of Examples and Comparative Examples, but the present invention is not limited to these Examples. (Example 1) A diameter of 20 〇 mm °° in a resistivity 疋·cm and doped structure On the soil board, The temperature is 11 〇〇. 成长, the growth rate is set to 6 with a knife, and the piece is growing at a faster rate to produce a resistivity of 1.5 m Ω . cm ,: 疋 "01 epitaxial layer, thereby producing epitaxial crystal After that, the resistivity of the epitaxial wafer fabricated by the upper layer is further shown in Fig. 2. (Example 2), the resistivity is 2. 〇mQ.cm and holds (4) The diameter of the formation is 2 〇〇, early: on the substrate, the growth rate is set to 6 quot ° C, and the growth rate is set to 6 ": to achieve a rapid growth, and the resistivity is 2.0 mΩ · cm and the film thickness is The zigzag layer 'is used to fabricate the wafer wafer. Thereafter, 10 201250787 measures the resistivity of the fabricated epitaxial wafer in the diameter direction. The result ' at this time is shown in Fig. 3. (Comparative Example 1) An epitaxial wafer was produced in the same manner as in Example 除了 except that the growth rate was set to 2 // m/min. Thereafter, the resistivity of the manufactured remote crystal wafer was measured in the diameter direction. The result at this time is shown in Fig. 2. (Comparative Example 2) The resistivity of the epitaxial wafer produced by the epitaxial wafer was produced in the same manner as the growth rate was set to be the same. 3Fig. 0 2 μ m/min, in addition to Example 2. After that, the results at the time of the measurement were measured in the diameter direction, and the case where the crystal growth was carried out under the conditions shown in Comparative Example i and Comparative Example 2 together was shown, because it was in a high temperature state of 1000 ° C or higher. A high-resistance epitaxial layer is formed on the low-resistance substrate at a normal growth rate of 2 vm/min, so that phosphorus or arsenic doped in the substrate diffuses and is easily affected by the automatic doping. Therefore, in Comparative Example i and Comparative Example 2, the electrical resistivity of the edge portion of the produced stray crystal circle was extremely lowered. However, in Example i and Example 2 t which were carried out by using the production method of the present invention, since the crystal layer was grown at a high rate at a growth rate of -/min, the amount of automatic doping which can be suppressed can be suppressed. Therefore, it was found that the resistivity of the edge portion and the center portion of the produced epitaxial wafer was substantially uniform. Further, the present invention is not limited to the above embodiment. For example, in the present invention, a vapor phase growth apparatus for vapor-phase-growing an epitaxial layer is not limited, and 201250787 can be applied to various vapor phases such as a vertical type (flat type), a barrel type (cylindrical type), and a single piece type. Growing device. The above-described embodiments are exemplified, and any examples having substantially the same configuration as the technical idea described in the scope of the claims of the present invention and capable of performing the same functions are included in the technical scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an example of a graph showing the correlation between the amount of self-doping of a substrate to an epitaxial layer and the growth rate of the crystal layer. Fig. 2 is a graph showing the resistance distribution in the radial direction of the epitaxial wafer in Example 1 and Comparative Example 1. Fig. 3 is a graph showing the resistance distribution in the radial direction of the epitaxial wafer in Example 2 and Comparative Example 2. Fig. 4 is a view showing a flow chart showing an example of a method of manufacturing an epitaxial germanium wafer of the present invention. [Main component symbol description] Benefit 12